Low-cost multilayer device structure

By fabricating and laser-sealing multilayer device assemblies using the DPC method, the problems of high cost and poor performance of multilayer devices are solved, and a high-precision, low-cost and high-reliability multilayer device structure is achieved.

CN223584402UActive Publication Date: 2025-11-21HUIZHOU XINCI SEMICON CO LTD
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Patent Information

Application Number
CN202423009753.7
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-12-05
Publication Date
2025-11-21
Estimated Expiration
2034-12-05

AI Technical Summary

Technical Problem

Existing multilayer device structures are costly to manufacture, have low production efficiency, and poor performance, especially HTCC and metal package soldering, which suffer from dimensional inaccuracies and conductivity issues.

Method used

The middle, upper, and lower layer components are fabricated using the DPC method, and the dam layer is connected by laser soldering or gold-tin solder to achieve high-precision packaging of multilayer devices. No insulating glue is required, and the grounding is achieved by using a porous structure to realize lossless transmission of high-frequency signals.

Benefits of technology

It achieves low-cost, high-reliability, and lossless transmission of high-frequency signals. The product has good airtightness, simple assembly, short manufacturing cycle, and avoids the problem of insulating glue aging. It is suitable for the field of radio frequency devices.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

The utility model discloses a low-cost multilayer device structure, which comprises a middle-layer assembly, an upper-layer assembly and a lower-layer assembly, and the middle-layer assembly, the upper-layer assembly and the lower-layer assembly are all manufactured in a DPC mode. The middle-layer assembly comprises a middle ceramic layer, a middle front circuit layer and a middle back circuit layer; the upper layer assembly is stacked right above the middle layer assembly; the middle-layer assembly, the upper-layer assembly and the lower-layer assembly are all manufactured in a DPC mode, multi-layer seal welding is carried out in a matched mode, the overall size is more accurate, insulation paste is not needed, aging is not prone to occurring, meanwhile, grounding is carried out through a DPC porous structure, and therefore lossless transmission of high-frequency signals is achieved, the use performance of products is better, and the service life of the products is prolonged. Elements in the box dams can be packaged in batches, after packaging is completed, cutting is carried out, and single-piece packaging is changed into batch packaging. The product is good in air tightness, simple to assemble, short in manufacturing period, low in cost, capable of realizing full-inorganic packaging and high in reliability.
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Description

TECHNICAL FIELD

[0001] The utility model relates to the field technology of ceramic packaging device, especially to a low -cost multilayer device structure. BACKGROUND

[0002] Multilayer device refers to the device vertically stacked by multiple functional layers or structural layers, which can be different materials or structures to achieve more complex functions and higher integration, and is an indispensable part of modern electronic engineering. Commonly seen are multilayer flexible electronic devices, multilayer ceramic capacitors, PCB multilayer boards, 3D chips and the like.

[0003] The current multilayer device structure is mainly made of HTCC (high temperature co-fired ceramic) or metal through packaging welding, wherein the high temperature co-fired ceramic is a method of mixing ceramic powder with solvent, binder, dispersant, plasticizer and other additives into slurry, obtaining green ceramic tape through flow casting technology, filling holes and line design through laser drilling and screen printing technology, and finally stacking, pressing and cutting the green body, sintering at 1500~1850℃ in a wet N2 / H2 atmosphere to realize vertical interconnection between different layers and complete the connection of metal and ceramic. The above two methods have the problems of high manufacturing cost and low production efficiency, and the HLCC one-piece molding is prone to size inaccuracy due to sintering shrinkage, and the metal sealing welding is prone to aging due to the need for insulating glue for conductivity. Therefore, the above two multilayer devices have the problem of poor performance. Therefore, it is necessary to study a scheme to solve the above problems. SUMMARY

[0004] Therefore, the utility model provides a low -cost multilayer device structure, which can effectively solve the problems of high manufacturing cost, low production efficiency and poor performance of the existing multilayer device.

[0005] To achieve the above purpose, the utility model adopts the following technical scheme:

[0006] A low -cost multilayer device structure, comprising a middle layer assembly, an upper layer assembly and a lower layer assembly, the middle layer assembly, the upper layer assembly and the lower layer assembly are all made of DPC method;

[0007] The middle layer assembly comprises a middle ceramic layer, a middle front line layer and a middle back line layer;The middle front line layer and the middle back line layer are respectively formed on the front and back of the middle ceramic layer;

[0008] The upper layer assembly is stacked directly above the middle layer assembly, and the upper layer assembly comprises an upper ceramic layer, an upper front circuit layer, an upper back circuit layer and an upper dam layer; the upper front circuit layer and the upper back circuit layer are respectively formed on the front surface and the back surface of the upper ceramic layer; the upper dam layer is formed on the upper back circuit layer, and the upper dam layer is welded with the middle front circuit layer and forms an upper cavity;

[0009] The lower layer assembly is stacked directly below the middle layer assembly, and the lower layer assembly comprises a lower ceramic layer, a lower front circuit layer, a lower back circuit layer and a lower dam layer; the lower front circuit layer and the lower back circuit layer are respectively formed on the front surface and the back surface of the lower ceramic layer; the lower dam layer is formed on the lower front circuit layer, and the lower dam layer is welded with the middle back circuit layer and forms a lower cavity.

[0010] As a preferred solution, the upper dam layer and the middle front circuit layer are connected by laser sealing, gold-tin solder or tin paste welding.

[0011] As a preferred solution, the lower dam layer and the middle back circuit layer are connected by laser sealing, gold-tin solder or tin paste welding.

[0012] The utility model discloses a kind of multi-layer ceramic package assemblies, and the utility model has obvious advantages and beneficial effects compared with prior art, specifically speaking, as known from the above technical solution:

[0013] By using DPC to manufacture middle layer assembly, upper layer assembly and lower layer assembly, and cooperating with multi-layer sealing welding, the overall size is more accurate, without using insulating glue, not easy to age, and the high-frequency signal lossless transmission is realized by the porous structure of DPC, the product use performance is better, and the elements in each dam can be packaged in batches, after packaging is completed, cutting is carried out again, from single package to batch packaging is realized. The product is airtight, easy to assemble, short in production cycle, low in cost, can realize all-inorganic packaging, and high in reliability.

[0014] To more clearly illustrate the structural features and functions of the utility model, the utility model will be described in detail below with the help of drawings and specific embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0015] Fig. 1 It is the assembly front view of preferred embodiment of the utility model;

[0016] Fig. 2 It is the exploded front view of preferred embodiment of the utility model.

[0017] Explanation of figure mark:

[0018] 10, middle layer assembly 11, middle ceramic layer

[0019] 12, middle front circuit layer 13, middle back circuit layer

[0020] 20, upper assembly 21, upper ceramic layer

[0021] 22, upper front circuit layer 23, upper back circuit layer

[0022] 24, upper dam layer 30, lower assembly

[0023] 31, lower ceramic layer 32, lower front circuit layer

[0024] 33, lower back circuit layer 34, lower dam layer DETAILED DESCRIPTION

[0025] Please refer to Figs. 1-2 Fig. 1 shows the specific structure of the preferred embodiment of the present application, which comprises a middle assembly 10, an upper assembly 20 and a lower assembly 30.

[0026] The middle assembly 10 is made by DPC method; the middle assembly 10 is a flat plate structure, which comprises a middle ceramic layer 11, a middle front circuit layer 12 and a middle back circuit layer 13; the middle front circuit layer 12 and the middle back circuit layer 13 are respectively formed on the front and back surfaces of the middle ceramic layer 11.

[0027] The upper assembly 20 is made by DPC method; the upper assembly 20 is a dam structure, which is stacked on the top of the middle assembly 10, and comprises an upper ceramic layer 21, an upper front circuit layer 22, an upper back circuit layer 23 and an upper dam layer 24; the upper front circuit layer 22 and the upper back circuit layer 23 are respectively formed on the front and back surfaces of the upper ceramic layer 21; the upper dam layer 24 is formed on the upper back circuit layer 23, and is combined and welded with the middle front circuit layer 12 to form an upper cavity. In this embodiment, the upper dam layer 24 and the middle front circuit layer 12 are connected by laser sealing, gold solder or tin paste welding, which is not easy to age and fall off, and is stable and reliable in connection, with long service life. The upper dam layer 24 is made of copper material, which is formed by electroplating.

[0028] The lower assembly 30 is made by DPC, is a dam structure, is arranged directly below the middle assembly 10, and comprises a lower ceramic layer 31, a lower front circuit layer 32, a lower back circuit layer 33 and a lower dam layer 34; the lower front circuit layer 32 and the lower back circuit layer 33 are respectively formed on the front surface and the back surface of the lower ceramic layer 31; the lower dam layer 34 is formed on the lower front circuit layer 32, and the lower dam layer 34 is welded with the middle back circuit layer 13 and forms a lower cavity. In the embodiment, the lower dam layer 34 and the middle back circuit layer 13 are connected by laser sealing, gold-tin solder or tin paste welding, are not easy to age and fall off, are stable and reliable in connection, and have long service life. The lower dam layer 34 is made of copper and is formed by electroplating.

[0029] The manufacturing process of the embodiment is as follows:

[0030] First, the middle assembly 10, the upper assembly 20 and the lower assembly 30 are respectively made by DPC, then electronic components are placed in the upper dam layer 24 and connected with the upper back circuit layer 23 in conduction, and another electronic component is placed in the lower dam layer 34 and connected with the lower front circuit layer 32 in conduction, then the upper dam layer 24 is welded with the middle front circuit layer 12, and the lower dam layer 34 is welded with the middle back circuit layer 13, so that a complete electronic packaging device is formed and can be applied to the field of radio frequency devices.

[0031] The design focus of the utility model lies in: the middle assembly, the upper assembly and the lower assembly are all made by DPC, and are welded in multiple layers, so that the overall size is more accurate, the insulating glue is not needed, and the product is not easy to age, the high-frequency signal is transmitted without loss through the porous structure of DPC, the product has better use performance, the components in the dams can be packaged in batches, and after packaging, cutting is carried out, so that single packaging is realized to batch packaging. The product has good air tightness, simple assembly, short manufacturing period and low cost, can realize all-inorganic packaging, and has high reliability.

[0032] The above is only a preferred embodiment of the utility model, and does not limit the technical range of the utility model, so any slight modification, equivalent change and modification made according to the technical essence of the utility model are still within the scope of the technical scheme of the utility model.

Claims

1. A low cost multilayer device structure, characterized by: The middle layer assembly, the upper layer assembly and the lower layer assembly are all made by DPC method; The middle layer assembly comprises a middle ceramic layer, a middle front circuit layer and a middle back circuit layer; the middle front circuit layer and the middle back circuit layer are respectively formed on the front surface and the back surface of the middle ceramic layer; The upper layer assembly is stacked on the top of the middle layer assembly, and comprises an upper ceramic layer, an upper front circuit layer, an upper back circuit layer and an upper dam layer; the upper front circuit layer and the upper back circuit layer are respectively formed on the front surface and the back surface of the upper ceramic layer; the upper dam layer is formed on the upper back circuit layer, and the upper dam layer is combined and welded with the middle front circuit layer to form an upper cavity; The lower layer assembly is stacked on the bottom of the middle layer assembly, and comprises a lower ceramic layer, a lower front circuit layer, a lower back circuit layer and a lower dam layer; the lower front circuit layer and the lower back circuit layer are respectively formed on the front surface and the back surface of the lower ceramic layer; the lower dam layer is formed on the lower front circuit layer, and the lower dam layer is combined and welded with the middle back circuit layer to form a lower cavity.

2. A low cost multilayer device structure according to claim 1, characterized in that: The upper dam layer and the middle front circuit layer are connected by laser sealing welding, gold-tin solder or tin paste welding.

3. A low cost multilayer device structure as claimed in claim 1, wherein: The lower dam layer and the middle back circuit layer are connected by laser sealing welding, gold-tin solder or tin paste welding.