Perovskite film layer preparation device
By employing a combination design of a heating vessel and a mixing reactor in the perovskite film preparation device, the consistency of the doping ratio of the perovskite film was achieved, thereby improving the efficiency of the device.
Patent Information
- Application Number
- CN202423270425.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-27
- Publication Date
- 2025-11-25
- Estimated Expiration
- 2034-12-27
AI Technical Summary
In existing technologies, it is difficult to maintain a consistent doping ratio in the spatial dimension of perovskite films, which affects the efficiency of perovskite devices.
The design employs a combination of multiple heating containers and a mixing reactor. By mixing gaseous materials within the mixing reaction chamber, the consistency of the doping ratio is ensured, and uniform deposition is achieved through the design of dispersion tubes and injection holes.
This improved the uniformity of the doping ratio in the perovskite film, thereby increasing the operating efficiency of the perovskite device.
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Figure CN223592802U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to perovskite film layer preparation technical field, specifically, a perovskite film layer preparation device. BACKGROUND
[0002] In the related art, perovskite film layer is usually prepared by co-evaporation, that is, multiple evaporation sources are used, each of which is filled with different materials, each evaporation source is heated, the materials in each evaporation source are evaporated after being heated, and the perovskite film layer is formed on the substrate after mixing in the coating chamber.
[0003] However, since the positions of each evaporation source are different, it is difficult to ensure the consistency of the doping ratio of the perovskite film layer in the spatial dimension under the condition of co-evaporation and doping of different materials, the doping effect is poor, and the efficiency of the perovskite device with the perovskite film layer is affected. SUMMARY
[0004] The utility model aims at at least one of the above technical problems in the prior art to some extent. To this end, the utility model provides a perovskite film layer preparation device, which is beneficial to improving the consistency of the doping ratio of the perovskite film layer.
[0005] According to the perovskite film layer preparation device, each heating container is adapted to contain and heat corresponding evaporation materials to obtain first gas-phase materials; the mixing reactor has a mixing reaction cavity, an air inlet and an air outlet which are in communication with the mixing reaction cavity, the air inlet is in communication with each heating container, so that the first gas-phase materials generated in each heating container are mixed in the mixing reaction cavity of the mixing reactor and second gas-phase materials are obtained, and the air outlet is adapted to be opposite to the deposition plate, so that the second gas-phase materials form a perovskite film layer on the deposition plate.
[0006] According to the perovskite film layer preparation device, by setting the mixing reactor in communication with the multiple heating containers, the first gas-phase materials generated in each heating container can be mixed uniformly and fully reacted in the mixing reaction cavity of the mixing reactor, so as to improve the consistency of the doping ratio of the perovskite film layer when the second gas-phase materials flow out through the air outlet and form the perovskite film layer.
[0007] According to some embodiments of the utility model, the mixing reactor comprises a mixing reaction tube, the mixing reaction tube has the mixing reaction cavity, the air inlet and the air outlet, the flow area of the air inlet is smaller than the flow area of the mixing reaction cavity, the flow area of the air outlet is smaller than the flow area of the mixing reaction cavity and larger than the flow area of the air inlet, so that the pressure gradually decreases in the areas corresponding to the air inlet, the mixing reaction cavity and the air outlet.
[0008] According to some embodiments of the present application, the mixing reactor further comprises a dispersion pipe, one end of the dispersion pipe is communicated with the gas outlet, and the other end of the dispersion pipe has a plurality of injection holes, each of the injection holes is adapted to be opposite to the deposition plate, and the flow area of the dispersion pipe is greater than the flow area of the gas outlet.
[0009] According to some embodiments of the present application, the mixing reactor further comprises a plurality of nozzles, the plurality of nozzles correspond to the plurality of injection holes one by one, and each of the nozzles is installed at the corresponding injection hole.
[0010] According to some embodiments of the present application, the perovskite film layer preparation device further comprises a first heater, the first heater is used for heating the mixing reactor.
[0011] According to some embodiments of the present application, the heating container comprises a crucible and a second heater, the crucible has a containing cavity for containing the evaporated material, and the second heater is arranged outside the containing cavity and connected with the crucible.
[0012] According to some embodiments of the present application, the mixing reactor further comprises a flow guide pipe, the gas inlet is communicated with each of the heating containers through the flow guide pipe, and the plurality of heating containers are arranged at intervals in the length direction of the flow guide pipe.
[0013] According to some embodiments of the present application, the perovskite film layer preparation device further comprises a plurality of detectors, the plurality of detectors correspond to the plurality of heating containers one by one, the detector is communicated with the corresponding heating container, and the detector is arranged on the flow guide pipe, and the detector is used for detecting the evaporation rate of the evaporated material in the corresponding heating container.
[0014] According to some embodiments of the present application, the flow guide pipe comprises a flow guide main pipe and a plurality of flow guide branch pipes, the gas inlet is communicated with each of the heating containers through the flow guide main pipe, the plurality of flow guide branch pipes, the plurality of heating containers and the plurality of detectors correspond to each other, the flow guide branch pipe is communicated with the corresponding heating container through the flow guide main pipe, and the detector is arranged on the corresponding flow guide branch pipe.
[0015] Additional aspects and advantages of the present application will be given in part in the following description, and will become apparent from the following description, or will be learned by practice of the present application. BRIEF DESCRIPTION OF DRAWINGS
[0016] Figure 1 is a structure diagram of the perovskite film layer preparation device according to the embodiments of the present application.
[0017] Reference signs:
[0018] Heating container 1; crucible 11; containing cavity 111; second heater 12;
[0019] Mixing reactor 2; mixing reactor tube 21; mixing reaction cavity 211; gas inlet 212; gas outlet 213; flow guide pipe 22; main flow guide pipe 221; branch flow guide pipe 222; dispersion pipe 23; injection hole 231; nozzle 24; flow guide pipe 25;
[0020] Detector 3; first heater 4; third heater 6;
[0021] Perovskite film layer preparation device 10. DETAILED DESCRIPTION
[0022] The embodiments of the present application are described in detail below, examples of which are shown in the drawings, wherein the same or similar notations represent the same or similar elements having the same or similar functions throughout. The embodiments described below by reference to the drawings are exemplary, and are intended to explain the present application, and cannot be understood as a limitation of the present application.
[0023] In the description of the present application, it is understood that the terms "thickness", "upper", "lower", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements indicated must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.
[0024] In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is at least two, for example, two, three, etc., unless otherwise explicitly specified.
[0025] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection", "fixing" and the like should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected or can communicate with each other; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0026] The following describes the perovskite film layer preparation device 10 according to the embodiments of the present application. Figure 1 The perovskite film layer preparation device 10 according to the embodiments of the present application is described in detail.
[0027] Referring to Figure 1 The perovskite film layer preparation device 10 according to the embodiments of the present application includes a plurality of heating containers 1 and a mixing reactor 2. Each heating container 1 is adapted to contain and heat a corresponding evaporated material to obtain a first gaseous material. The mixing reactor 2 has a mixing reaction cavity 211, and an air inlet 212 and an air outlet 213 in communication with the mixing reaction cavity 211. The air inlet 212 is in communication with each heating container 1, so that the first gaseous material generated in each heating container 1 is mixed in the mixing reaction cavity 211 to obtain a second gaseous material. The air outlet 213 is adapted to be opposite to a deposition plate, so that the second gaseous material forms a perovskite film layer on the deposition plate.
[0028] Specifically, in the preparation of the perovskite film layer, each heating container 1 can heat a corresponding evaporated material to obtain a first gaseous material. The first gaseous material generated in each heating container 1 can flow into the mixing reaction cavity 211 through the air inlet 212 of the mixing reactor 2, so as to be mixed in the mixing reaction cavity 211 to obtain a second gaseous material. The second gaseous material can flow to the deposition plate through the air outlet 213. When the second gaseous material meets the deposition plate, the second gaseous material condenses to form a perovskite film layer. The first gaseous material is obtained by heating and evaporating the evaporated material. When the first gaseous material generated in each heating container 1 is mixed in the mixing reaction cavity 211, the first gaseous material generated in each heating container 1 can react with each other to obtain the second gaseous material.
[0029] It can be understood that, by arranging the mixing reactor 2, the first gaseous material generated in each heating container 1 can be uniformly mixed in the mixing reaction cavity 211 and fully reacted, so that the component doping ratio of the second gaseous material generated in the mixing reaction cavity 211 is kept consistent during the whole preparation process, thereby facilitating the improvement of the consistency of the doping ratio of the perovskite film layer, the performance of the perovskite film layer, and the working efficiency of the perovskite device with the perovskite film layer.
[0030] The perovskite film layer preparation device 10 according to the embodiments of the present application is arranged with the mixing reactor 2 in communication with the plurality of heating containers 1. The first gaseous material generated in each heating container 1 can be uniformly mixed in the mixing reaction cavity 211 of the mixing reactor 2 and fully reacted, so as to improve the consistency of the doping ratio of the perovskite film layer when the second gaseous material flows out through the air outlet 213 and forms the perovskite film layer.
[0031] In some embodiments of the present application, referring to Figure 1As shown, the mixing reactor 2 comprises a mixing reaction tube 21, the mixing reaction tube 21 has a mixing reaction cavity 211, an air inlet 212 and an air outlet 213, the flow area of the air inlet 212 is smaller than the flow area of the mixing reaction cavity 211, the flow area of the air outlet 213 is smaller than the flow area of the mixing reaction cavity 211 and larger than the flow area of the air inlet 212, so that the pressure gradually decreases in the area formed by the air inlet 212, the mixing reaction cavity 211 and the air outlet 213.
[0032] It can be understood that the flow area of the air outlet 213 is smaller than the flow area of the mixing reaction cavity 211 and larger than the flow area of the air inlet 212, that is, the flow area of the air inlet 212 is smaller than the flow area of the mixing reaction cavity 211, when the first gas-phase material flows from the air inlet 212 into the mixing reaction cavity 211, the pressure at the air inlet 212 is greater than the pressure at the mixing reaction cavity 211, and the first gas-phase material is sprayed from the air inlet 212 into the mixing reaction cavity 211 more powerfully, so as to facilitate the diffusion of the first gas-phase material into the mixing reaction cavity 211 and facilitate the uniform distribution of the first gas-phase material in the mixing reaction cavity 211, so as to facilitate the full mixing of the first gas-phase material generated in each heating container 1 in the mixing reaction cavity 211, and facilitate the further improvement of the consistency of the doping ratio of the second gas-phase material.
[0033] The flow area of the air outlet 213 is smaller than the flow area of the mixing reaction cavity 211, and the flow area of the air outlet 213 is smaller, which can reduce the flow of the first gas-phase material in the mixing reaction cavity 211 flowing out of the air outlet 213, and facilitate the increase of the mixing and reaction time of the first gas-phase material in the mixing reaction cavity 211, so as to facilitate the full mixing and reaction of the first gas-phase material generated in each heating container 1 in the mixing reaction cavity 211, and facilitate the further improvement of the consistency of the doping ratio of the second gas-phase material.
[0034] In some embodiments of the utility model, refer to Figure 1 As shown, in the gravity direction, the air inlet 212 is located below the air outlet 213, it can be understood that the first gas-phase material is obtained by evaporating the material by heating, the temperature of the first gas-phase material is relatively high, and the density is relatively low, so as to facilitate the smooth flow of the first gas-phase material upwards and fully mix and react in the process of flowing, wherein the gravity direction can be Figure 1 The up-down direction.
[0035] In some embodiments of the utility model, refer to Figure 1 As shown, the mixing reactor 2 further comprises a dispersion pipe 23, one end of the dispersion pipe 23 is communicated with the air outlet 213, the other end of the dispersion pipe 23 has a plurality of injection holes 231, each injection hole 231 is adapted to be opposite to the deposition plate, and the flow area of the dispersion pipe 23 is larger than the flow area of the air outlet 213.
[0036] It can be understood that the dispersion pipe 23 has a plurality of spray holes 231 opposite to the deposition plate, when the second gas phase material in the mixed reaction cavity 211 flows into the dispersion pipe 23 through the gas outlet 213, the second gas phase material can be sprayed to different positions of the deposition plate uniformly through the plurality of spray holes 231, which is beneficial to improve the consistency of the doping ratio of the perovskite film layer.
[0037] The flow area of the dispersion pipe 23 is larger than that of the gas outlet 213, when the second gas phase material in the mixed reaction cavity 211 flows into the dispersion pipe 23 from the gas outlet 213, the flow rate of the second gas phase material at the gas outlet 213 is greater than that in the dispersion pipe 23, the pressure difference between the gas outlet 213 and the dispersion pipe 23 is larger, and the second gas phase material is sprayed more powerfully from the gas outlet 213 into the dispersion pipe 23, so as to facilitate the diffusion of the second gas phase material into the dispersion pipe 23, which is beneficial to the uniform distribution of the second gas phase material in the dispersion pipe 23, thereby being beneficial to the second gas phase material sprayed to the deposition plate uniformly through the plurality of spray holes 231, and being beneficial to further improve the consistency of the doping ratio of the perovskite film layer.
[0038] In some embodiments of the utility model, refer to Figure 1 It is shown that the mixed reactor 2 further includes: a calcium manifold 25, one end of the manifold 25 is communicated with the dispersion pipe 23, the other end of the manifold 25 is communicated with the gas outlet 213, thereby realizing the indirect communication between the dispersion pipe 23 and the gas outlet 213, and the manifold 25 is suitable for guiding the second gas phase material in the mixed reaction cavity 211 into the dispersion pipe 23.
[0039] In some embodiments of the utility model, refer to Figure 1 It is shown that the mixed reactor 2 further includes: a plurality of nozzles 24, the plurality of nozzles 24 correspond to the plurality of spray holes 231 one by one, each nozzle 24 is installed at the corresponding spray hole 231, and each nozzle 24 is suitable for spraying the second gas phase material at the corresponding spray hole 231 to the deposition plate uniformly, which is beneficial to further improve the consistency of the doping ratio of the perovskite film layer.
[0040] In some embodiments of the utility model, refer to Figure 1 It is shown that the perovskite film layer preparation device 10 further includes: a first heater 4, the first heater 4 is used for heating the mixed reactor 2, so that the mixed reactor 2 generates heat, and the heated mixed reactor 2 can heat the first gas phase material and the second gas phase material in the mixed reaction cavity 211, which can avoid the first gas phase material and the second gas phase material in the mixed reaction cavity 211 from condensing and blocking due to cold, and by heating the first gas phase material, the activity of the gas molecules of the first gas phase material can be improved, which is beneficial to the sufficient mixing and reaction of the first gas phase material in the mixed reaction cavity 211.
[0041] In some embodiments of the present application, referring to Figure 1 As shown in the figure, the heating container 1 comprises a crucible 11 and a second heater 12, the crucible 11 has a containing cavity 111 for containing evaporation material, the second heater 12 is arranged outside the containing cavity 111 and connected with the crucible 11, the second heater 12 can heat the crucible 11 outside the containing cavity 111, so that the crucible 11 generates heat, thereby heating the evaporation material in the containing cavity 111, and the evaporation material is evaporated into the first gas phase material.
[0042] It can be understood that the second heater 12 is arranged outside the containing cavity 111, and the evaporation material can avoid the first gas phase material generated by the evaporation of the evaporation material from adhering to the second heater 12 during the heating process, thereby preventing the heating efficiency of the second heater 12 from being affected, and facilitating the cleaning of the inner wall of the containing cavity 111 after the preparation of the perovskite film layer is completed.
[0043] In some embodiments of the present application, referring to Figure 1 As shown in the figure, the mixing reactor 2 further comprises a flow guide pipe 22, the gas inlet 212 communicates with each heating container 1 through the flow guide pipe 22, and the plurality of heating containers 1 are arranged at intervals in the length direction of the flow guide pipe 22, and the flow guide pipe 22 is adapted to guide the first gas phase material generated in each heating container 1 to flow to the gas inlet 212.
[0044] It can be understood that the plurality of heating containers 1 are arranged at intervals in the length direction of the flow guide pipe 22, which can reduce the heat exchange between adjacent heating containers 1, so as to accurately control the evaporation rate of the evaporation material in each heating container 1. Among them, the evaporation rate of the evaporation material in the heating container 1 can be adjusted by adjusting the heating power of the second heater 12.
[0045] In some embodiments of the present application, referring to Figure 1 As shown in the figure, the first heater 4 can be arranged outside the flow guide pipe 22, the mixing reaction pipe 21, the flow converging pipe 25 and the dispersion pipe 23, which can avoid the first gas phase material and the second gas phase material from adhering to the first heater 4, thereby preventing the heating efficiency of the first heater 4 from being affected, and facilitating the cleaning of the inside of the flow guide pipe 22, the inside of the mixing reaction pipe 21, the inside of the flow converging pipe 25 and the inside of the dispersion pipe 23 after the preparation of the perovskite film layer is completed.
[0046] In some embodiments of the present application, referring to Figure 1 As shown in the figure, the perovskite film layer preparation device 10 further comprises a plurality of detectors 3, the plurality of detectors 3 correspond to the plurality of heating containers 1 one by one, the detector 3 communicates with the corresponding heating container 1, and the detector 3 is arranged on the flow guide pipe 22, and the detector 3 is used for detecting the evaporation rate of the evaporation material in the corresponding heating container 1.
[0047] It can be understood that by arranging the plurality of detectors 3 corresponding to and communicating with the plurality of heating containers 1, the evaporation rate of the evaporated material in each heating container 1 can be monitored separately, and the evaporation rate of the evaporated material in each heating container 1 can be accurately adjusted during the preparation of the perovskite film layer, thereby facilitating the accurate adjustment of the doping ratio of different materials of the perovskite film layer. The detector 3 can be a detector 3 with a quartz crystal probe.
[0048] In some embodiments of the utility model, referring to Figure 1 The flow guide pipe 22 includes a flow guide main pipe 221 and a plurality of flow guide branch pipes 222. The gas inlet 212 communicates with each heating container 1 through the flow guide main pipe 221. The plurality of flow guide branch pipes 222, the plurality of heating containers 1 and the plurality of detectors 3 correspond one-to-one. The flow guide branch pipe 222 communicates with the corresponding heating container 1 through the flow guide main pipe 221. The detector 3 is arranged on the corresponding flow guide branch pipe 222.
[0049] It can be understood that the flow guide main pipe 221 is suitable for guiding the first gaseous material generated in each heating container 1 to flow to the gas inlet 212. During the process of the first gaseous material generated in each heating container 1 flowing to the gas inlet 212 through the flow guide main pipe 221, a part of the first gaseous material can flow to the detector 3 through the flow guide branch pipe 222, so as to detect the evaporation rate of the evaporated material in the heating container 1 in real time through the detector 3.
[0050] In some embodiments of the utility model, referring to Figure 1 The perovskite film layer preparation device 10 further includes a third heater 6. The third heater 6 is arranged outside the flow guide branch pipe 222 to heat the flow guide branch pipe 222. This can effectively prevent the first gaseous material from condensing and blocking the flow guide branch pipe 222 due to cold, so as to facilitate the smooth flow of the first gaseous material to the detector 3, and can avoid the condensation of the first gaseous material due to cold, which can reduce the flow of the first gaseous material in the flow guide branch pipe 222, thereby facilitating the detector 3 to accurately detect the evaporation rate of the evaporated material.
[0051] In some embodiments of the utility model, referring to Figure 1 In the gravity direction, the mixing reactor 2 is arranged above each heating container 1. It can be understood that the first gaseous material is obtained by heating and evaporating the evaporated material. The temperature of the first gaseous material is relatively high, and the density is relatively low, so as to facilitate the upward flow of the first gaseous material generated in each heating container 1 into the mixing reactor 2.
[0052] In some embodiments of the utility model, the first heater 4, the second heater 12 and the third heater 6 can all be heating wires. The structure of the heating wire is simple, and the perovskite film layer preparation device 10 is convenient to produce and manufacture.
[0053] The perovskite film layer preparation device 10 can realize the preparation of the perovskite film layer by the co-evaporation method, and can make the doping of the perovskite film layer always keep the same proportion in the spatial dimension, specifically, the first gaseous material generated in each heating container 1 can be first introduced into the coarse mixing reaction tube 21 for gathering through the fine flow guide pipe 22, the pressure difference is greater from the fine pipe (flow guide pipe 22) to the coarse pipe (mixing reaction tube 21), the first gaseous material is sprayed more powerfully, the reaction is more thorough, and after full mixing reaction, the first gaseous material is introduced into the dispersion pipe 23 through the fine flow pipe 25, the first gaseous material is difficult to be led out from the coarse pipe (mixing reaction tube 21) to the fine pipe (flow pipe 25), the reaction time is longer, and it is more beneficial to full reaction, finally, the perovskite film layer is deposited on the deposition plate and formed by being sprayed out through the plurality of nozzles 24, by sequentially arranging the flow guide pipe 22, the mixing reaction tube 21, the flow pipe 25 and the dispersion pipe 23, the segmented design of the perovskite film layer preparation device 10 can be realized, which is beneficial to form the vapor pressure difference, the material mixing is more uniform, the reaction is more thorough, and the mixing reaction tube 21 can simultaneously play the roles of mixing and reaction.
[0054] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example" or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in the present specification.
[0055] Although the embodiments of the present application have been shown and described above, it should be understood that the above embodiments are exemplary and should not be construed as limiting the present application, and those skilled in the art can make changes, modifications, replacements and variations to the above embodiments within the scope of the present application.
Claims
1.A device for preparing a perovskite film layer, characterized in that, The device comprises: a plurality of heating containers (1), each of which is adapted to contain and heat a corresponding evaporated material to obtain a first gaseous phase material; a mixing reactor (2) having a mixing reaction cavity (211) and a gas inlet (212) and a gas outlet (213) in communication with the mixing reaction cavity (211), the gas inlet (212) being in communication with each of the heating containers (1) so that the first gaseous phase material generated in each of the heating containers (1) is mixed in the mixing reaction cavity (211) to obtain a second gaseous phase material, and the gas outlet (213) being adapted to be opposite to a deposition plate so that the second gaseous phase material forms a perovskite film layer on the deposition plate. 2.The perovskite film layer preparation apparatus of claim 1, wherein The mixing reactor (2) comprises: a mixing reaction tube (21) having the mixing reaction cavity (211), the gas inlet (212) and the gas outlet (213), and the flow area of the gas inlet (212) being smaller than that of the mixing reaction cavity (211), and the flow area of the gas outlet (213) being smaller than that of the mixing reaction cavity (211) and larger than that of the gas inlet (212), so that the gas inlet (212), the mixing reaction cavity (211) and the gas outlet (213) form a region with gradually decreasing pressure. 3.The perovskite film layer preparation apparatus according to claim 2, wherein The mixing reactor (2) further comprises a dispersion tube (23), one end of which is in communication with the gas outlet (213), and the other end of which has a plurality of injection holes (231), each of which is adapted to be opposite to the deposition plate, and the flow area of the dispersion tube (23) being larger than that of the gas outlet (213). 4.The perovskite film layer preparation apparatus of claim 3, wherein The mixing reactor (2) further comprises a plurality of nozzles (24), each of which is installed at a corresponding injection hole (231). 5.The perovskite film layer preparation apparatus of claim 1, wherein The device for preparing a perovskite film layer further comprises a first heater (4) for heating the mixing reactor (2). 6.The perovskite film layer preparation apparatus of claim 1, wherein The heating container (1) comprises: a crucible (11) having a containing cavity (111) for containing the evaporated material; a second heater (12) arranged outside the containing cavity (111) and connected with the crucible (11). 7.The perovskite film layer preparation apparatus of claim 1, wherein The mixing reactor (2) further comprises a flow guide pipe (22), the gas inlet (212) being in communication with each of the heating containers (1) through the flow guide pipe (22), and a plurality of the heating containers (1) being arranged at intervals in the length direction of the flow guide pipe (22). 8.The perovskite film layer preparation apparatus of claim 7, wherein, The perovskite film layer preparation device further comprises a plurality of detectors (3) corresponding to the plurality of heating containers (1), the detector (3) is in communication with the corresponding heating container (1), and the detector (3) is arranged on the flow guide pipe (22), and the detector (3) is used for detecting the evaporation rate of the evaporation material in the corresponding heating container (1). 9.The perovskite film layer preparation apparatus of claim 8, wherein, The flow guide pipe (22) comprises: a flow guide main pipe (221), the gas inlet (212) is in communication with each heating container (1) through the flow guide main pipe (221), a plurality of flow guide branch pipes (222), the plurality of flow guide branch pipes (222), the plurality of heating containers (1) and the plurality of detectors (3) correspond one by one, the flow guide branch pipe (222) is in communication with the corresponding heating container (1) through the flow guide main pipe (221), and the detector (3) is arranged on the corresponding flow guide branch pipe (222).