Addressable semiconductor laser array

Abstract

The utility model relates to the technical field of semiconductor lasers, in particular to an addressable semiconductor laser array, which comprises MN laser units, a plurality of anodes and a plurality of cathodes, the MN laser units are arranged in an array mode according to MN, for each anode in the multiple anodes, the laser units located in different rows and different columns can be connected in series through the anodes to form inclined columns, the multiple anodes are connected in series to form multiple mutually-spaced inclined columns, and for each cathode in the multiple cathodes, the laser units in the same column are connected in series through the cathodes to form multiple mutually-spaced inclined columns. And all the cathodes are connected in parallel. According to the addressable semiconductor laser array, the lasers located in different rows and different columns are connected in series through the anodes, each laser unit can be controlled to emit light independently, any specific adjacent three laser units can emit light at the same time, then the addressable semiconductor laser array can emit light in various modes, and the application range of the addressable semiconductor laser array is widened.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor laser, specifically provide a kind of addressable semiconductor laser array. BACKGROUND

[0002] Semiconductor laser (such as photonic crystal surface emitting laser, vertical cavity surface emitting laser) emitted perpendicularly to cavity surface, its emitted light beam is perpendicular to basic surface, because it has low threshold current, circular spot, high modulation bandwidth, single longitudinal mode lasing, easy to realize high-density two-dimensional array, lower manufacturing cost and many other advantages, it has been widely applied in many fields.

[0003] In recent years, semiconductor laser emitted perpendicularly to cavity surface is widely applied in laser radar. Especially, laser scanning is realized by using semiconductor laser array addressing technology, without the aid of any rotating parts, compared with mechanical laser radar, the influence of stability (for example, structural stability, rotation precision stability) and reliability of rotating parts on scanning result accuracy in running process can be avoided, production process can also be simplified, and production cost is reduced. However, there are still some problems in the current semiconductor laser array addressable technology. For example, 2D addressable semiconductor laser array cannot realize simultaneous light emission of specific adjacent three laser units.

[0004] REFERENCE Figure 1 It is a 2D addressable VCSEL structure diagram of prior art, and the 2D addressable VCSEL 100 has 5 VCSELs 10 5, any 2 2 array contains A, B, C and D 4 VCSELs 10, and the VCSELs 10 in each row share an anode, for example, all the VCSELs 10 in the row of AB share an anode 112. The VCSELs 10 in each column share a cathode, for example, all the VCSELs 10 in the column of AC share a cathode 122, all the anodes 111 to 115 are connected in parallel, all the cathodes 121 to 125 are connected in parallel, and when any one VCSEL 10 emits light, the anode and the cathode corresponding to the VCSEL 10 are loaded with power respectively, for example, when the anode 112 is loaded with power alone and the cathode 122 is loaded with power alone, only A emits light. However, this structure cannot realize simultaneous light emission of any three VCSELs 10 in the 2 2 array, and the other VCSEL 10 does not emit light. For example, when A, B and C three lasers emit light simultaneously, D does not emit light, and the 2D addressable VCSEL structure diagram of prior art cannot realize simultaneous light emission of specific adjacent three laser units. UTILITY MODEL CONTENT

[0005] The utility model discloses to solve the above -mentioned problem provides a kind of addressable semiconductor laser array, addressable semiconductor laser array can be made with multiple patterns light-emitting, increase addressable semiconductor laser array application range.

[0006] In a first aspect, the utility model provides a kind of addressable semiconductor laser array, comprising: M N laser units, a plurality of anodes and a plurality of cathodes;

[0007] The M N laser units are arranged in array with M N, M is row, N is column, wherein the M and N are all positive integer greater than or equal to 2;

[0008] For each anode in the plurality of anodes, the anode will be in different rows, different columns the laser unit is connected in series to form inclined column, the series connection of the plurality of anodes forms a plurality of mutually spaced inclined columns;

[0009] For each cathode in the plurality of cathodes, the cathode will be in the same column laser unit is connected in series.

[0010] As a preferred place, the laser unit is single or multiple semiconductor laser.

[0011] As a preferred place, the anode is electrically connected with the P type contact electrode of the semiconductor laser, and the cathode is electrically connected with the N type contact electrode of the semiconductor laser.

[0012] As a preferred place, the semiconductor laser is perpendicular to cavity surface semiconductor laser.

[0013] As a preferred place, the semiconductor laser is perpendicular to cavity surface semiconductor laser.

[0014] As a preferred place, the semiconductor laser is perpendicular to cavity surface semiconductor laser.

[0015] Compared with prior art, the utility model can obtain following beneficial effects:

[0016] In the utility model embodiment, a kind of addressable semiconductor laser array is provided, comprising: M N laser units, a plurality of anodes and a plurality of cathodes;M N laser units are arranged in array with M N are arranged in an array, M is a row, and N is a column, wherein M and N are both positive integers greater than or equal to 2; for each of the plurality of anodes, the anode can connect laser units located in different rows and different columns in series to form an inclined column, the series connection of the plurality of anodes forms a plurality of inclined columns spaced from each other, adjacent inclined columns can be directly arranged in parallel, and all the anodes are connected in parallel; for each of the plurality of cathodes, the cathode can connect laser units in the same column in series, and all the cathodes are connected in parallel. By adopting the series connection of the anodes and the laser units located in different rows and different columns, each laser unit can be controlled to emit light individually, and any three adjacent laser units can be controlled to emit light simultaneously, so that the addressable semiconductor laser array can emit light in multiple patterns, and the application range of the addressable semiconductor laser array is increased. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 is a schematic diagram of a 2D addressable VCSEL structure in the prior art;

[0018] Figure 2 is a schematic diagram of an embodiment 1 of an addressable semiconductor laser array according to an embodiment of the present application;

[0019] Figure 3 is a schematic diagram of a semiconductor laser structure in an addressable semiconductor laser array according to an embodiment of the present application;

[0020] Figure 4 is a schematic diagram of a first control circuit of embodiment 1 in an addressable semiconductor laser array according to an embodiment of the present application;

[0021] Figure 5 is a schematic diagram of a second control circuit of embodiment 1 in an addressable semiconductor laser array according to an embodiment of the present application;

[0022] Figure 6 is a schematic diagram of a third control circuit of embodiment 1 in an addressable semiconductor laser array according to an embodiment of the present application;

[0023] Figure 7 is a schematic diagram of a fourth control circuit of embodiment 1 in an addressable semiconductor laser array according to an embodiment of the present application;

[0024] Figure 8 is a schematic diagram of an embodiment 2 of an addressable semiconductor laser array according to an embodiment of the present application.

[0025] The reference signs in the drawings include:

[0026] The laser unit 20, the first anode 211, the second anode 212, the third anode 213, the fourth anode 214, the fifth anode 215, the sixth anode 216, the seventh anode 217, the eighth anode 218, the ninth anode 219, the tenth anode 220, the eleventh anode 221, the twelfth anode 222, the thirteenth anode 223, the first cathode 231, the second cathode 232, the third cathode 234, the fourth cathode 235, the first inclined anode 311, the second inclined anode 312, the third inclined anode 313, the fourth inclined anode 314, the fifth inclined anode 315, the sixth inclined anode 316, the seventh inclined anode 317, all the inclined anodes 311-317 are connected in parallel, the first vertical cathode 321, the second vertical cathode 322, the third vertical cathode 323, the fourth vertical cathode 324, the fifth vertical cathode 325. DETAILED DESCRIPTION

[0027] Hereinafter, embodiments of the present application will be described with reference to the accompanying drawings. In the following description, the same modules are denoted by the same reference numerals. In the case of the same reference numerals, their names and functions are also the same. Therefore, detailed descriptions thereof will not be repeated.

[0028] In order to make the objectives, technical solutions, and advantages of the present application clearer, further detailed descriptions will be given to the present application in combination with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and do not constitute a limitation on the present application.

[0029] In combination with Figure 2 As shown in the drawings, the embodiment of the present application provides an addressable semiconductor laser array, comprising: M N laser units 20, a plurality of anodes, and a plurality of cathodes;

[0030] M N laser units 20 are arranged in an array, M rows and N columns, wherein M and N are both positive integers greater than or equal to 2; N laser units 20 are arranged in an array, M rows and N columns, wherein M and N are both positive integers greater than or equal to 2;

[0031] For each of the plurality of anodes, the anode can connect the laser units 20 in different rows and different columns in series to form an inclined column, specifically, each anode can connect the laser units 20 in each row with a difference of 1 or more positions in series, the series of the plurality of anodes form a plurality of inclined columns spaced from each other, and adjacent inclined columns can be arranged in parallel, and all the anodes are connected in parallel;

[0032] For each of the plurality of cathodes, the cathode can connect the laser units 20 in the same column in series, and all the cathodes are connected in parallel.

[0033] The laser unit 20 herein can be a single semiconductor laser or multiple semiconductor lasers used in combination, which can be selected by those skilled in the art as needed, and is not limited in this regard.

[0034] In some embodiments, the anode can be electrically connected to the P-type contact electrode of the semiconductor laser, and the cathode can be electrically connected to the N-type contact electrode of the semiconductor laser.

[0035] In some embodiments, the semiconductor laser can be a vertical cavity surface emitting laser, which can be a photonic crystal surface emitting laser or a vertical cavity surface emitting laser, which can be selected by those skilled in the art as needed, and is not limited in this regard.

[0036] Embodiment 1

[0037] In combination Figure 2 As shown in the utility model embodiment, the addressable semiconductor laser array comprises 5 5 laser units 20, 13 anodes and 5 cathodes, the laser unit 20 is a single semiconductor laser, specifically, 5 5 laser units 20 are arranged in 5 5 arrays, the 13 anodes are respectively a first anode 211, a second anode 212, a third anode 213, a fourth anode 214, a fifth anode 215, a sixth anode 216, a seventh anode 217, an eighth anode 218, a ninth anode 219, a tenth anode 220, an eleventh anode 221, a twelfth anode 222 and a thirteenth anode 223, all the anodes are connected in parallel, and the 5 cathodes are respectively a first cathode 231, a second cathode 232, a third cathode 234 and a fourth cathode 235, all the cathodes are connected in parallel, wherein, for the convenience of description, four light emitting points A, B, C and D are defined, that is, corresponding to the laser units 20 needing to emit light, A, B, C and D are any 2 2 array laser units 20, it can be understood that the structure of each laser unit 20 is the same, all the laser units 20 on each inclined column share an anode, for example, all the laser units 20 on the inclined column where A is located share the sixth anode 216, all the laser units 20 in each column share a cathode, for example, all the laser units 20 in the column where AC is located share the second cathode 232, all the anodes 211 to 223 are connected in parallel, and all the cathodes 231 to 235 are connected in parallel, each anode connects the laser units 20 with a difference of 2 positions in each row in series, and the specific structure can be referred to Figure 2The fifth anode 215 is located at (1, 5), the laser unit 20 at (3, 4) and the laser unit 20 at (5, 3) are connected in series, all the anodes are connected in parallel, all the cathodes are connected in parallel, a power supply is loaded to an individual anode and an individual cathode, and the individual laser unit 20 located at the intersection of the anode and the cathode emits light.

[0038] In combination Figure 3 As shown in the figure, when the laser unit 20 is a single vertical-cavity surface-emitting laser, the structure of each laser unit 20 is sequentially arranged from top to bottom as follows: a P-type contact electrode 1, a P-type distributed Bragg reflector (DBR) 2, a current limiting layer 3, an active region multi-quantum well 4, an N-type DBR 5, a substrate 6 and an N-type contact electrode 7. The anode is connected with the P-type contact electrode 1 of the semiconductor laser, and the cathode is connected with the P-type contact electrode 5 of the semiconductor laser.

[0039] The first control circuit of the embodiment 1

[0040] In combination Figure 4 As shown in the figure, the first control circuit diagram of the addressable semiconductor laser array is provided in the embodiment of the utility model, a power supply is loaded to the fifth anode 215, the seventh anode 217 and the eighth anode 218 respectively, a power supply is loaded to the second cathode 232 and the third cathode 233 respectively, the laser unit at B is located at the intersection of the fifth anode 215 and the third cathode 233, the current of the laser unit at B is conducted, and the laser unit at B emits light; the laser unit at C is located at the intersection of the eighth anode 218 and the second cathode 232, the current of the laser unit at C is conducted, and the laser unit at C emits light; the laser unit at D is located at the intersection of the seventh anode 217 and the third cathode 233, the current of the laser unit at D is conducted, and the laser unit at D emits light, and the laser unit at A does not have a conducted current, so the laser unit at A does not emit light.

[0041] The second control circuit of the embodiment 1

[0042] In combination Figure 5 As shown in the figure, the second control circuit diagram of the addressable semiconductor laser array is provided in the embodiment of the utility model, a power supply is loaded to the sixth anode 216, the seventh anode 217 and the eighth anode 218 respectively, a power supply is loaded to the second cathode 232 and the third cathode 233 respectively, the current of the laser unit at A, the laser unit at C and the laser unit at D is conducted, and the current of the laser unit at B is not conducted, so the laser unit at A, the laser unit at C and the laser unit at D emit light simultaneously, and the laser unit at B does not emit light.

[0043] The third control circuit of the embodiment 1

[0044] In combinationFigure 6 As shown in the third control circuit diagram of the addressable semiconductor laser array provided in the embodiment of the utility model, the power supply is loaded to the inclined fifth anode 215, the sixth anode 216 and the eighth anode 218 respectively, and the power supply is loaded to the second cathode 232 and the third cathode 233 respectively, the current of the A laser unit, the B laser unit and the C laser unit is conducted, and the current of the D laser unit is not conducted, so the A laser unit, the B laser unit and the C laser unit emit light at the same time, and the D laser unit does not emit light.

[0045] The fourth control circuit of the embodiment 1

[0046] In combination Figure 7 As shown in the fourth control circuit diagram of the addressable semiconductor laser array provided in the embodiment of the utility model, the power supply is loaded to the inclined fifth anode 215, the sixth anode 216 and the eighth anode 218 respectively, and the power supply is loaded to the second cathode 232 and the third cathode 233 respectively, the current of the A laser unit, the B laser unit and the C laser unit is conducted, and the current of the D laser unit is not conducted, so the A laser unit, the B laser unit and the C laser unit emit light at the same time, and the D laser unit does not emit light.

[0047] In the four control circuits in the embodiment 1, by controlling the anode and the cathode to load the power supply respectively, any two 2 laser units 20 in the array can emit light and one laser unit 20 does not emit light.

[0048] Embodiment 2

[0049] In combination Figure 8 As shown in the fourth control circuit diagram of the addressable semiconductor laser array provided in the embodiment of the utility model, the power supply is loaded to the inclined fifth anode 215, the sixth anode 216 and the eighth anode 218 respectively, and the power supply is loaded to the second cathode 232 and the third cathode 233 respectively, the current of the A laser unit, the B laser unit and the C laser unit is conducted, and the current of the D laser unit is not conducted, so the A laser unit, the B laser unit and the C laser unit emit light at the same time, and the D laser unit does not emit light. N laser units 20 can be 3 5 laser units 20, each laser unit 20 has 4 sub-laser units, and the 4 sub-laser units are arranged in 2 2 arrays, specifically, the sub-laser units can adopt a single vertical cavity surface emitting laser, and one laser unit 20 has 2 2 single vertical cavity surface emitting lasers arranged in combination, for reference Figure 8The x-y coordinate axis can be used to represent the coordinates of the laser unit 20, and (1, 3) is the coordinate of the laser unit 20. Each laser unit 20 has four sub-laser units. Each inclined column of all the laser units 20 shares an inclined anode. Each column of all the laser units 20 shares a cathode. Correspondingly, the plurality of anodes are a first inclined anode 311, a second inclined anode 312, a third inclined anode 313, a fourth inclined anode 314, a fifth inclined anode 315, a sixth inclined anode 316, and a seventh inclined anode 317. All the inclined anodes 311 to 317 are connected in parallel. The plurality of cathodes include a first vertical cathode 321, a second vertical cathode 322, a third vertical cathode 323, a fourth vertical cathode 324, and a fifth vertical cathode 325. All the vertical cathodes 321 to 325 are connected in parallel. Each inclined anode connects the laser units 20 in each row with a difference of one position. The structure can realize that the laser units at A, the laser units at B, and the laser units at C emit light at the same time, while the laser units at D do not emit light, and the laser units at A, the laser units at C, and the laser units at D emit light at the same time, while the laser units at B do not emit light.

[0050] It should be noted that the sub-laser unit can adopt a single laser emitter perpendicular to the cavity surface. The structure is sequentially arranged from top to bottom as follows: a P-type contact electrode 1, a P-type distributed Bragg reflector DBR 2, a current limiting layer 3, an active region multi-quantum well 4, an N-type distributed Bragg reflector DBR 5, a substrate 6, and an N-type contact electrode 7. The anode is connected with the P-type contact electrode 1, and the cathode is connected with the P-type contact electrode 5. Details are not described herein.

[0051] The utility model discloses an addressable semiconductor laser array, including: M N laser units, a plurality of anodes and a plurality of cathodes. The M N laser units are arranged in an array, M is a row, and N is a column, wherein M and N are both positive integers greater than or equal to 2. For each anode of the plurality of anodes, the anode can connect the laser units in different rows and different columns in series to form an inclined column. The series connection of the plurality of anodes forms a plurality of inclined columns spaced from each other. Adjacent inclined columns can be arranged in parallel. All the anodes are connected in parallel. For each cathode of the plurality of cathodes, the cathode can connect the laser units in the same column in series. All the cathodes are connected in parallel. By connecting the laser units in different rows and different columns in series through the anodes, each laser unit can be controlled to emit light individually, and any three adjacent laser units can be controlled to emit light simultaneously. Thus, the addressable semiconductor laser array can emit light in multiple patterns, thereby increasing the application range of the addressable semiconductor laser array.

[0052] Although the embodiments of the present application have been shown and described above, it should be understood by those skilled in the art that the above embodiments are exemplary and should not be construed as limiting the present application. Those skilled in the art can make changes, modifications, replacements and variations to the above embodiments within the scope of the present application.

[0053] The specific embodiments of the present application described above do not constitute a limitation on the scope of protection of the present application. Any other corresponding changes and modifications made according to the technical concept of the present application should be included in the scope of protection of the present application.

Claims

1. An addressable semiconductor laser array, characterized by, Comprise: M N laser units, a plurality of anodes, and a plurality of cathodes; The M N laser units with M N is arranged in an array, M is the number of rows, and N is the number of columns, where M and N are both positive integers greater than or equal to 2; For each of the plurality of anodes, the anode connects the laser units in different rows, different columns in series to form a slanted column, and the plurality of anodes form a plurality of mutually spaced slanted columns in series; For each of the plurality of cathodes, the cathode connects the laser units in the same column in series.

2. The addressable semiconductor laser array of claim 1, wherein, The laser unit is a single or multiple semiconductor laser.

3. The addressable semiconductor laser array of claim 2, wherein, The anode is electrically connected to the P-type contact electrode of the semiconductor laser, and the cathode is electrically connected to the N-type contact electrode of the semiconductor laser.

4. An addressable semiconductor laser array as claimed in claim 2 or 3, characterized in that, The semiconductor laser is a vertical cavity surface emitting laser.

5. The addressable semiconductor laser array of claim 4, wherein, The vertical cavity surface emitting laser is a photonic crystal surface emitting laser.

6. The addressable semiconductor laser array of claim 4, wherein, The vertical cavity surface emitting laser is a vertical cavity surface emitting laser.

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