Series-parallel connection structure of optical isolation driving semiconductor switch

Abstract

The utility model provides a series-parallel connection structure of optical isolation driving semiconductor switches, which relates to the field of semiconductor switches and comprises a plurality of groups of optical isolation driving semiconductor switches and a plurality of series-parallel connection metal plates, and the series-parallel connection metal plates enable the optical isolation driving semiconductor switches in the same group to be connected in series. The series and parallel metal plates connect the plurality of groups of optical isolation driving semiconductor switches in parallel; the driving boards are connected through a plurality of driving board supporting columns, and each driving board comprises a driving module and a photoelectric conversion module; according to the scheme, the laser array module is driven by using the laser array as the light source of the optical isolation driving semiconductor switch, and the optical isolation driving semiconductor switch can be driven by using the received optical signal from the laser array module. Energy optical fibers and high-power lasers are not needed, the application cost of the optical isolation driving semiconductor switch is remarkably reduced, and the economical efficiency of the optical isolation driving semiconductor switch is further improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of semiconductor switch especially relates to a series parallel connection structure of light isolation drive semiconductor switch. BACKGROUND

[0002] The light isolation drive semiconductor switch is a kind of semiconductor device using light energy technology to drive semiconductor switch conduction.The conventional semiconductor switch needs external trigger voltage to control its conduction, and the light isolation drive semiconductor switch uses optical signal to replace electrical signal to trigger conduction. Since it uses optical signal to drive, it avoids the interference of main circuit (high voltage, large current) to control circuit, and is suitable for high-power high-voltage devices requiring high electromagnetic compatibility and large insulation between signal source and main circuit, such as high-voltage direct current transmission device, high-power pulse device, high-voltage nuclear fusion device, etc.

[0003] The light isolation drive control semiconductor switch has good performance and reliability in complex environments such as high voltage and large current, and is widely used in power electronics, pulse power and other fields. With the continuous development and maturity of light isolation drive technology, the application range of light isolation drive semiconductor switch will be further expanded, providing more possibilities for performance improvement and energy efficiency improvement of electronic equipment.

[0004] The light isolation drive semiconductor switch uses light signals of a certain wavelength to irradiate semiconductor devices. In addition to anode and cathode, the light isolation drive semiconductor device also needs to be used with energy optical fiber and semiconductor laser. The laser serves as a trigger light source, and the energy optical fiber serves as a transmission medium for the light source. In actual application scenarios, the energy optical fiber has low transmission efficiency and high loss, so it is necessary to increase the core diameter of the energy optical fiber or increase the power of the semiconductor laser, which will greatly increase the overall use cost. With the development of industry and technology, a new connection structure has emerged to solve the above problems. UTILITY MODEL CONTENTS

[0005] To solve the above technical problems, the utility model provides a series parallel connection structure of light isolation drive semiconductor switch.

[0006] The series parallel connection structure of light isolation drive semiconductor switch provided by the utility model includes multiple groups of light isolation drive semiconductor switches, each group has multiple light isolation drive semiconductor switches, each light isolation drive semiconductor switch includes a metallized ceramic tube shell, a cathode metal electrode, a light isolation drive semiconductor switch chip, a laser diode array module, a lens, a cathode metal electrode extension part and a fastening screw, wherein the metallized ceramic tube shell includes a metallized ceramic tube shell ceramic part and a metallized ceramic tube shell anode metal part, and further includes

[0007] A plurality of series and parallel metal plates, the series and parallel metal plates are connected in series with a plurality of light isolation driving semiconductor switches in the same group, and the series and parallel metal plates are connected in parallel with a plurality of groups of light isolation driving semiconductor switches;

[0008] Two metal electrode plates, a plurality of groups of light isolation driving semiconductor switches are located between the two metal electrode plates;

[0009] Two insulators and two clamp metal plates corresponding to the positions of the metal electrode plates, the metal electrode plates are connected through the insulators and the clamp metal plates, the two clamp metal plates are connected through a plurality of clamp fastening screws and clamp fastening nuts; and

[0010] A plurality of drive plates, a plurality of drive plates and a plurality of groups of light isolation driving semiconductor switches are correspondingly arranged, a plurality of drive plate support columns are arranged between the plurality of drive plates, and the drive plate comprises a drive module and a photoelectric conversion module.

[0011] Preferably, the light isolation driving semiconductor switch is provided with six groups, each group has three light isolation driving semiconductor switches, and the six groups of light isolation driving semiconductor switches are arranged from top to bottom, and the three light isolation driving semiconductor switches in each group are arranged in the same layer.

[0012] Preferably, the series and parallel metal plates are provided with five, and are arranged in a triangular shape, each series and parallel metal plate is located between two adjacent light isolation driving semiconductor switches in the six groups of light isolation driving semiconductor switches, the top of the series and parallel metal plate is connected with the metalized ceramic tube shell anode metal part in the three light isolation driving semiconductor switches in each group, and the bottom of the series and parallel metal plate is connected with the cathode metal electrode extension part.

[0013] Preferably, the cathode metal electrode extension part in the uppermost light isolation driving semiconductor switch in the six groups of light isolation driving semiconductor switches is connected with one metal electrode plate, and the metalized ceramic tube shell anode metal part in the lowermost light isolation driving semiconductor switch is connected with another metal electrode plate.

[0014] Preferably, the clamp fastening screw and the clamp fastening nut are provided with four, the four clamp fastening screws are arranged through the clamp metal plate located above, and the extension end of the clamp fastening screw is fixedly connected with the clamp metal plate located below, and the four clamp fastening nuts are respectively screwed on the four clamp fastening screws.

[0015] Preferably, the drive plate and the drive plate support column are provided with six, the six drive plates are arranged from top to bottom, the drive plate and the laser diode array module in the three light isolation driving semiconductor switches in each group are connected through wires, and the six drive plate support columns are arranged through the six drive plates.

[0016] Preferably, the metalized ceramic tube shell is surrounded by smooth ceramic, and the lower end is a metal part, the metal part is processed with a step for mounting an anode of an optical isolation driving semiconductor switch chip, a plurality of light windows are formed on the optical isolation driving semiconductor switch chip, and a step for mounting a laser diode array module is formed on the upper part of the cathode metal electrode

[0017] Compared with the related art, the series-parallel structure of the optical isolation driving semiconductor switch has the following beneficial effects:

[0018] 1. The laser array is used as the light source of the optical isolation driving semiconductor switch, a trigger signal is input, a device is connected with the driving module through an optical fiber, an electro-optical conversion module on the device converts a signal into an optical signal, an ST or FC multimode optical fiber is used to transmit the trigger signal, the trigger signal is converted into an electrical signal by an optoelectronic conversion module on the driving module, the laser array module is driven by the electrical signal, and the optical isolation driving semiconductor switch is driven by the received optical signal from the laser array module. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 It is a sectional view of the overall series-parallel structure of the utility model;

[0020] Figure 2 It is a three-dimensional schematic view of the overall structure of the utility model;

[0021] Figure 3 It is a sectional view of the optical isolation driving semiconductor switch structure of the utility model;

[0022] Figure 4 It is a schematic view of the cathode metal electrode extension part in the utility model;

[0023] Figure 5 It is a schematic view of the laser diode array module in the utility model;

[0024] Figure 6 It is a schematic view of the cathode metal electrode in the utility model;

[0025] Figure 7 It is a schematic view of the optical isolation driving semiconductor switch chip in the utility model;

[0026] Figure 8 It is a schematic view of the series-parallel metal plate in the utility model.

[0027] The figure mark: 1, the metal ceramic tube shell; 101, the metal ceramic tube shell ceramic part; 102, the metal ceramic tube shell anode metal part; 2, the light isolation drive semiconductor switch chip; 3, cathode metal electrode; 4, lens; 5, laser diode array module; 6, fastening screw; 7, cathode metal electrode extension part; 8, clamp fastening screw; 9, clamp fastening nut; 10, clamp metal plate; 11, insulator; 12, metal electrode plate; 13, drive plate; 14, drive plate support column; 15, series, parallel metal plate. DETAILED DESCRIPTION

[0028] The utility model will be further described below in connection with the drawings and embodiments.

[0029] Please see Figures 1 to 8 A series-parallel structure of light isolation drive semiconductor switch includes multiple groups of light isolation drive semiconductor switches, each group having multiple light isolation drive semiconductor switches, each light isolation drive semiconductor switch including a metal ceramic tube shell 1, a cathode metal electrode 3, a light isolation drive semiconductor switch chip 2, a laser diode array module 5, a lens 4, a cathode metal electrode extension part 7 and a fastening screw 6, wherein the metal ceramic tube shell 1 includes a metal ceramic tube shell ceramic part 101 and a metal ceramic tube shell anode metal part 102, and further includes

[0030] Multiple series-parallel metal plates 15, which connect the multiple light isolation drive semiconductor switches in the same group in series and connect the multiple groups of light isolation drive semiconductor switches in parallel;

[0031] Two metal electrode plates 12, each of which is located between the multiple groups of light isolation drive semiconductor switches, for connecting an external voltage with the light isolation drive semiconductor switches, as an anode and a cathode of the series-parallel component of the light isolation drive semiconductor switches;

[0032] Two insulators 11 and two clamp metal plates 10 corresponding to the positions of the metal electrode plates 12, the metal electrode plates 12 being connected through the insulators 11 and the clamp metal plates 10, the two clamp metal plates 10 being connected through multiple clamp fastening screws 8 and clamp fastening nuts 9; and

[0033] Multiple drive plates 13, which are correspondingly arranged with the multiple groups of light isolation drive semiconductor switches, the multiple drive plates 13 being connected through multiple drive plate support columns 14, each drive plate 13 including a drive module and a photoelectric conversion module.

[0034] The optical isolation drive semiconductor switch is provided with six groups, each group has three optical isolation drive semiconductor switches, the six groups of optical isolation drive semiconductor switches are arranged from top to bottom, and the three optical isolation drive semiconductor switches in each group are arranged in the same layer.

[0035] The series-parallel metal plate 15 is provided with five and arranged in a triangular shape, each series-parallel metal plate 15 is arranged between two adjacent optical isolation drive semiconductor switches in each group, the top of the series-parallel metal plate 15 is connected with the metalized ceramic tube shell anode metal part 102 in the three optical isolation drive semiconductor switches in each group, and the bottom of the series-parallel metal plate 15 is connected with the cathode metal electrode extension part 7.

[0036] The cathode metal electrode extension part 7 in the uppermost optical isolation drive semiconductor switch in the six groups of optical isolation drive semiconductor switches is connected with a metal electrode plate 12, and the metalized ceramic tube shell anode metal part 102 in the lowermost optical isolation drive semiconductor switch is connected with another metal electrode plate 12.

[0037] The clamp fastening screw 8 and the clamp fastening nut 9 are provided with four, the four clamp fastening screws 8 are all penetrated through the upper clamp metal plate 10, and the extension end of the clamp fastening screw 8 is fixedly connected with the lower clamp metal plate 10, and the four clamp fastening nuts 9 are respectively screwed on the four clamp fastening screws 8.

[0038] The drive plate 13 and the drive plate support column 14 are provided with six, the six drive plates 13 are arranged from top to bottom, the drive plate 13 is connected with the laser diode array module 5 in the three optical isolation drive semiconductor switches in each group through a wire, and the six drive plate support columns 14 are all penetrated through the six drive plates 13.

[0039] The metalized ceramic tube shell 1 is smooth ceramic around, the lower end is a metal part, the metal part is processed with a step, the optical isolation drive semiconductor switch chip 2 anode is installed, a plurality of light windows are arranged on the optical isolation drive semiconductor switch chip 2, and the upper part of the cathode metal electrode 3 is processed with a step for installing the laser diode array module 5

[0040] In the process of the specific embodiment, the metallized ceramic tube shell 1 in the optical isolation drive semiconductor switch is used as the optical isolation drive semiconductor switch package shell, the periphery of the metallized ceramic tube shell is the ceramic part, and the bottom is the anode metal electrode. The optical isolation drive semiconductor switch is placed in the metallized ceramic tube shell 1, the anode thereof is attached to the anode metal part 102 of the metallized ceramic tube shell, and the cathode thereof faces upward and is attached to the cathode metal electrode 3. The through hole on the cathode metal electrode 3 is slightly larger than the light window of the optical isolation drive semiconductor switch chip 2, the light windows are uniformly distributed on the cathode of the optical isolation drive semiconductor switch chip 2, the through hole is aligned with the light window, the lens 4 is installed on the through hole, the PCB board of the laser diode array module 5 is attached to the step on the cathode metal electrode 3, and the laser diode is aligned with the through hole. On the cathode metal electrode 3, the cathode metal electrode 3 and the cathode metal electrode extension part 7 can be fastened and installed by using the internal hexagonal column head of the fastening screw 8, which is used for protecting the laser diode array module 5 when the optical isolation drive semiconductor switches are connected in series and in parallel, and also used as the connecting piece when the optical isolation drive semiconductor switches are connected in series and in parallel. When the metal material is connected and pressed, the cathode metal electrode extension part can well protect the laser diode array module 5 and provide the hole position for installation and wiring. In addition, the laser diode array module 5 is arranged according to the shape and size of the light window by using the special laser diode, so as to ensure that the light emitted by the laser diode can completely cover the light window of the optical isolation drive semiconductor switch. The lens 4 is made of special material and process, and can enlarge, reduce or focus the light emitted by the laser diode array module 5, so that the light uniformly covers the light window.

[0041] In the above embodiment, the clamp metal plate 10 is made of stainless steel material with a certain thickness, the insulator 11 separates the metal electrode plate 12 and the clamp metal plate 10 to prevent the creeping phenomenon caused by high voltage, and all the components that need to be concentrically installed are designed with positioning pins. The series and parallel metal plate 15 is used for connecting the optical isolation drive semiconductor switches and also used for installing and positioning the optical isolation drive semiconductor switches, which is processed according to the size of the optical isolation drive semiconductor switch and made of brass with nickel plating treatment on the surface to prevent oxidation. In addition, the clamp metal plate 10 is pressed by the clamp fastening screw 6 and the clamp fastening nut 9 to press the optical isolation drive semiconductor switch structure. In addition, the drive module and the photoelectric conversion module of the drive plate 13 provide the driving signal for the laser diode array module 5 in the optical isolation drive semiconductor switch. When the structure is used, the external control signal source is connected with the drive plate 13 by using the optical fiber, the signal port for the optical fiber connection can be processed on the drive plate 13, and the drive plate support column 14 is used for installing and supporting the drive plate 13 and is made of insulating material;

[0042] It is further to be noted that the electrical connection between the drive board 13 and the laser diode array module 5 is made by means of an electrical wire made of an insulating material and which passes through the cathode metal electrode extension 7 through a gap in the cathode metal electrode extension 7 to the laser diode array module 5.

[0043] The above merely describes the embodiments of the present application, and does not limit the patent scope of the present application, and any equivalent structure or equivalent process transformation made by using the content of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A series-parallel configuration of optically isolated drive semiconductor switches comprising a plurality of groups of optically isolated drive semiconductor switches, each group having a plurality of optically isolated drive semiconductor switches, each of said optically isolated drive semiconductor switches comprising a metallized ceramic package (1), a cathode metal electrode (3), an optically isolated drive semiconductor switch chip (2), a laser diode array module (5), a lens (4), a cathode metal electrode extension (7), and a fastener screw (6), wherein the metallized ceramic package (1) comprises a metallized ceramic package ceramic portion (101) and a metallized ceramic package anode metal portion (102), characterized in that: Also include A plurality of series, parallel metal plates (15), the series, parallel metal plates (15) are connected in series with a plurality of light isolation driving semiconductor switches in the same group, and the series, parallel metal plates (15) are connected in parallel with a plurality of light isolation driving semiconductor switches in the same group; Two metal electrode plates (12), and the plurality of light isolation driving semiconductor switches are located between the two metal electrode plates (12); Two insulators (11) and two clamp metal plates (10) corresponding to the position of the metal electrode plate (12), the metal electrode plate (12) is connected through the insulator (11) and the clamp metal plate (10), and the two clamp metal plates (10) are connected through a plurality of clamp fastening screws (8) and clamp fastening nuts (9); and A plurality of drive plates (13), a plurality of drive plates (13) and a plurality of light isolation driving semiconductor switches are correspondingly arranged, a plurality of drive plates (13) are connected through a plurality of drive plate support columns (14), and the drive plate (13) comprises a drive module and a photoelectric conversion module.

2. A series-parallel connection of optically isolated driving semiconductor switches according to claim 1, characterized in that The light isolation driving semiconductor switch is provided with six groups, each group has three light isolation driving semiconductor switches, and the six groups of light isolation driving semiconductor switches are arranged from top to bottom, and the three light isolation driving semiconductor switches in each group are arranged in the same layer.

3. The series-parallel connection of optically isolated driving semiconductor switches according to claim 1, characterized in that The series, parallel metal plates (15) are provided with five, and are triangular, each series, parallel metal plate (15) is located between two adjacent light isolation driving semiconductor switches in the six groups of light isolation driving semiconductor switches, the top of the series, parallel metal plate (15) is connected with the metalized ceramic tube shell anode metal part (102) in the three light isolation driving semiconductor switches in each group, and the bottom of the series, parallel metal plate (15) is connected with the cathode metal electrode extension part (7).

4. The series-parallel connection of optically isolated driving semiconductor switches according to claim 1, characterized in that The cathode metal electrode extension part (7) in the uppermost light isolation driving semiconductor switch in the six groups of light isolation driving semiconductor switches is connected with one metal electrode plate (12), and the metalized ceramic tube shell anode metal part (102) in the lowermost light isolation driving semiconductor switch is connected with another metal electrode plate (12).

5. The series-parallel connection of optically isolated driving semiconductor switches according to claim 1, characterized in that The clamp fastening screw (8) and the clamp fastening nut (9) are provided with four, the four clamp fastening screws (8) are all penetrated through the clamp metal plate (10) located above, and the extension end of the clamp fastening screw (8) is fixedly connected with the clamp metal plate (10) located below, and the four clamp fastening nuts (9) are respectively screwed on the four clamp fastening screws (8).

6. The series-parallel connection of optically isolated driving semiconductor switches according to claim 1, characterized in that The drive plate (13) and the drive plate support column (14) are provided with six, the six drive plates (13) are arranged from top to bottom, the drive plate (13) is connected with the laser diode array module (5) in the three light isolation driving semiconductor switches in each group through a wire, and the six drive plate support columns (14) are all penetrated through the six drive plates (13).

7. The series-parallel connection of optically isolated driving semiconductor switches according to claim 1, characterized in that The metalized ceramic tube shell (1) is surrounded by smooth ceramic, and the lower end is a metal part, which is processed with a step for mounting the anode of the optical isolation driving semiconductor switch chip (2), a plurality of light windows are formed on the optical isolation driving semiconductor switch chip (2), and the upper part of the cathode metal electrode (3) is processed with a step for mounting the laser diode array module (5).

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