Silicon carbide inverter power unit
By designing a silicon carbide inverter power unit, the problems of uneven current and water-cooled scaling and clogging were solved, resulting in convenient assembly and improved equipment reliability, while avoiding device burnout and escalation of faults.
Patent Information
- Application Number
- CN202422956898.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-02
- Publication Date
- 2025-11-28
- Estimated Expiration
- 2034-12-02
AI Technical Summary
Silicon carbide MOSFETs suffer from problems such as uneven current distribution, inconvenient assembly of water-cooled structures, and burn-out of the devices due to scaling and blockage of copper tubes during use.
The inverter power unit adopts a silicon carbide structure, including a busbar absorption capacitor, a water-cooled plate, and a base, forming a single-phase H-bridge structure. The water-cooled plate dissipates heat and the RC absorption resistor reduces switching stress, ensuring current uniformity and ease of assembly.
This design achieves a simple structure and convenient assembly, avoids component burnout, improves equipment reliability and stability, and reduces failure rate and maintenance costs.
Smart Images
Figure CN223613201U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to high frequency induction heating equipment field especially relates to a silicon carbide inverter power unit. BACKGROUND
[0002] SiC MOSFET as a new type of power device, compared with the traditional silicon-based power device, has unique advantages under certain conditions:
[0003] Excellent high temperature characteristics: SiC MOSFET can still work normally at high temperature, has higher thermal stability, can be used in high temperature and high pressure harsh environment;
[0004] Excellent high frequency characteristics: SiC MOSFET has higher electron mobility and lower loss, so it has better performance under high frequency conditions;
[0005] Small size, light weight: SiC MOSFET uses smaller size chip, the same power device is smaller in size and lighter in weight, can improve the integration of power device.
[0006] But the current is uneven, and the water cooling structure is generally used for heat dissipation, and the copper pipe is not convenient to assemble, and the device is burned out due to blockage. INVENTION CONTENTS
[0007] The utility model aims at providing a silicon carbide inverter power unit, solves the uneven current of power unit, the water cooling heat dissipation assembly is not convenient, and the copper pipe is blocked to cause the problem of device burnout.
[0008] In order to achieve the above object, the utility model adopts the following technical scheme:
[0009] A silicon carbide inverter power unit, including busbar absorption capacitor, water cooling plate and base, the busbar absorption capacitor is placed in the base rear, and the busbar absorption capacitor is connected with the laminated busbar, the water cooling plate is arranged on the upper front of the base, the water cooling plate is fixed with the silicon carbide power module, the silicon carbide power module is connected with the resistance-capacitance absorption resistor, and the resistance-capacitance absorption resistor is connected with the absorption capacitor.
[0010] The silicon carbide power module is tubular, and eight silicon carbide power modules form a group, every four tubes are connected in parallel to form a bridge arm, and the midpoint output of every group of silicon carbide power modules is connected with the output of an end of alternating current output, forming an alternating current output row.
[0011] The silicon carbide power module has two groups of upper and lower bridge arms, forms a single-phase H bridge structure, the midpoint output of every group of upper and lower bridge arms is connected with the output of an end of alternating current output, and there are two groups of upper and lower bridge arms, and there are two alternating current output rows, which are output copper row A and output copper row B.
[0012] The busbar has 12 absorption capacitors.
[0013] The beneficial effects achieved by this utility model are:
[0014] (1) Simple structure, easy assembly, and short assembly time;
[0015] (2) Water cooling plates prevent the devices from burning out due to scale buildup and blockage in the copper tubes, and also prevent water leakage from expanding the scope of the fault.
[0016] (3) By using RC absorption resistors, the silicon carbide power module is in a soft-switching state, which reduces the switching stress at the commutation time, reduces electromagnetic interference, and reduces the switching loss of switching devices.
[0017] (4) The current flow through the busbar improves the current sharing and can transmit higher current. Attached Figure Description
[0018] Fig. 1 This is a schematic diagram of the structure of this utility model;
[0019] Fig. 2 This is a schematic diagram of the present invention from another angle;
[0020] Explanation of reference numerals in the attached diagram: 1. Stacked busbar; 2. Silicon carbide module; 3. Output copper busbar A; 4. Output copper busbar B; 5. Water-cooled plate; 6. Absorption capacitor; 7. RC absorption resistor; 8. Busbar absorption capacitor; 9. Base. Detailed Implementation
[0021] The technical solution of this utility model will be further described below with reference to the accompanying drawings.
[0022] like Figs. 1-2 As shown, a silicon carbide inverter power unit includes a water-cooled plate 5 and busbar absorption capacitors 8. Twelve busbar absorption capacitors 8 are neatly arranged at the bottom rear of the base 9. A stacked busbar 1 is connected above the busbar absorption capacitors 8. The water-cooled plate 5 is placed at the upper front of the unit box base 9. Sixteen silicon carbide power modules 2 are fixed on the water-cooled plate 5. Each silicon carbide power module 2 is connected to a resistive-capacitive absorption resistor 7, and each resistive-capacitive absorption resistor 7 is connected to an absorption capacitor 6. The silicon carbide power modules 2 are tubular, with four tubes connected in parallel to form a bridge arm. There are four bridge arms. The power unit has a single-phase H-bridge structure, divided into upper and lower groups. The midpoint of the upper and lower bridge arms in each group is one end of the AC output. There are two groups of upper and lower bridge arms, with two AC output busbars: output copper busbar A3 and output copper busbar B4. The 16 silicon carbide power modules work in turn, improving working efficiency. The water-cooled plate facilitates assembly and prevents device burnout due to scale buildup on the copper tubes, while also avoiding the problem of water leakage expanding the fault range.
[0023] The power unit is connected through busbars, which improves the reliability and stability of electronic equipment, as it can reduce the solder joints in the circuit board, reduce the failure rate and maintenance cost.
Claims
1. A silicon carbide inverter power cell, characterized by, Including the busbar absorption capacitor (8), the water cooling plate (5) and the base (9), the busbar absorption capacitor (8) is placed in the base (9) back, the busbar absorption capacitor (8) is connected to the laminated busbar (1), the water cooling plate (5) is placed on the unit box base (9) upper front, the water cooling plate (5) is fixed with silicon carbide power module (2), the silicon carbide power module (2) is connected to the resistance-capacitance absorption resistor (7), the resistance-capacitance absorption resistor (7) is connected to the absorption capacitor (6), the silicon carbide power module (2) is tubular, 8 silicon carbide power modules (2) are a group, every four tubes are connected in parallel to form a bridge arm, the midpoint output of every group silicon carbide power module upper and lower two bridge arms is an end of alternating current output, forming an alternating current output row.
2. An inverter power unit according to claim 1, characterized in that The silicon carbide power module (2) has upper and lower two groups, forming a single-phase H-bridge structure, the midpoint output of every group upper and lower two bridge arms is an end of alternating current output, a total of two groups of upper and lower bridge arms, a total of two alternating current output rows, respectively output copper row A (3) and output copper row B (4).
3. An inverter power unit according to any one of claims 1 or 2, characterized in that, The busbar absorption capacitor (8) is 12.