Reaction chamber and chemical vapor deposition equipment

By setting an annular protrusion on the side plate of the reaction chamber, the problems of temperature difference and flow field are alleviated, the coating peeling problem is solved, the product yield and life are improved, and the cost is reduced.

CN223620469UActive Publication Date: 2025-12-02ZHONGSHENG SEMICON (SHANGHAI) CO LTD
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Patent Information

Application Number
CN202423109157.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-12-16
Publication Date
2025-12-02
Estimated Expiration
2034-12-16

AI Technical Summary

Technical Problem

Excessive temperature difference caused the coating on the inner wall of the reaction chamber to peel off, affecting the quality of the process reaction and the product yield.

Method used

An annular protrusion is provided at the upper end of the side plate near the opening of the reaction chamber. A material with higher temperature resistance than the side plate, such as graphite, is used to alleviate temperature differences and reduce the influence of the flow field. The side wall thickness is increased, and coating peeling is avoided through design and flow field design.

Benefits of technology

This improved product yield, reduced manufacturing costs, extended the service life of the reaction chamber, and ensured the normal operation of the process reaction.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides a reaction cavity and chemical vapor deposition equipment. The reaction cavity comprises a bottom plate, a side plate, a heating mechanism and an annular bulge, the side plate surrounds the bottom plate along the edge of the bottom plate to form a reaction chamber; the reaction chamber is provided with an opening for gas to flow in, and the opening faces back to the bottom plate; the heating mechanism is arranged in the reaction chamber and is connected with the bottom plate; a cooling liquid channel is arranged in the side plate; the extension direction of the cooling liquid channel comprises the extension direction from the bottom end, close to the bottom plate, of the side plate to the top end, close to the opening of the reaction chamber, of the side plate; the annular bulge is arranged at the upper end of the side plate close to the opening of the reaction chamber; the annular protrusion is located on the side, close to the reaction cavity, of the cooling liquid channel and extends into the reaction cavity. According to the reaction chamber, the annular bulge is arranged at the upper end of the side plate, so that the wall thickness of the part, corresponding to the cooling liquid channel, of the upper end of the side plate is increased, and stripping and falling of process reaction attachments caused by overlarge temperature difference of the inner wall of the reaction chamber are avoided to a certain extent.
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Description

Technical Field

[0001] This application relates to the field of industrial equipment technology, and more specifically, to a reaction chamber and chemical vapor deposition equipment. Background Technology

[0002] Reaction chambers are commonly used for process reactions, such as chemical vapor deposition, semiconductor processes, and thin film fabrication. These reactions typically require filling the chamber with reaction gases and conducting the reaction under heating using a heating mechanism within the chamber. Accordingly, coolant channels are usually provided on the walls of the reaction chamber for cooling.

[0003] However, the side plate of the coolant passage closest to the chamber comes into contact with both the high-temperature gas and the coolant inside the chamber. The significant temperature difference between them often leads to reaction deposits on the inner wall of the chamber, forming an unstable coating that is highly prone to peeling off and falling into the chamber. These fallen coatings typically result in a significant reduction in the quality of the process reactions taking place within the reaction chamber, meaning they affect the yield of the final manufactured product. Utility Model Content

[0004] The purpose of this application is to provide a reaction chamber and chemical vapor deposition equipment that can prevent the process reaction deposits from peeling off and falling off the inner wall of the reaction chamber due to excessive temperature difference, thereby improving the yield of the final manufactured products.

[0005] In a first aspect, this application provides a reaction chamber, including a base plate, a side plate, a heating mechanism, and an annular protrusion; the side plate surrounds the base plate along its edge to form a reaction chamber; the reaction chamber has an opening for gas inflow, the opening facing away from the base plate; the heating mechanism is connected to the base plate within the reaction chamber; a coolant channel is provided within the side plate; the extension direction of the coolant channel includes an extension direction from the bottom end of the side plate near the base plate to the top end of the side plate near the opening of the reaction chamber; the annular protrusion is disposed on the upper end of the side plate near the opening of the reaction chamber; the annular protrusion is located on the side of the coolant channel near the reaction chamber and extends into the interior of the reaction chamber.

[0006] The aforementioned reaction chamber, by providing an annular protrusion at the upper end of the side plate near the opening of the reaction chamber, increases the wall thickness of the portion of the coolant channel corresponding to the upper end of the side plate, thereby alleviating the sudden temperature drop between the inside of the chamber and the inside of the coolant channel. This, in turn, to a certain extent, avoids the peeling and detachment of process reaction deposits from the inner wall of the reaction chamber due to excessive temperature difference, ultimately improving the yield of the final manufactured product.

[0007] In conjunction with the first aspect, optionally, the annular protrusion has a higher temperature resistance than the side plate.

[0008] The aforementioned reaction chamber, by using a material with higher temperature resistance than the side plate as the material for the annular protrusion, further mitigates the sudden temperature drop between the interior of the chamber and the interior of the coolant channel. This greatly reduces the risk of process reaction residue peeling off the inner wall of the reaction chamber due to excessive temperature difference, ultimately improving the yield of the final manufactured product.

[0009] In conjunction with the first aspect, the material of the annular protrusion may optionally include graphite.

[0010] The aforementioned reaction chamber, by specifically using graphite as the material for the annular protrusions, offers higher high-temperature resistance and greater ease of processing compared to aerogels, quartz, and other materials. Therefore, it reduces the manufacturing cost of the reaction chamber and also extends its service life.

[0011] In conjunction with the first aspect, optionally, the distance between the lower end of the annular protrusion near the base plate and the base plate is less than the distance between the top end of the heating mechanism away from the base plate and the base plate.

[0012] The aforementioned reaction chamber, by lowering the height of the lower end of the annular protrusion below the height of the top of the heating mechanism, reduces the impact on the flow field of gas entering the reaction chamber through the opening, thus ensuring the normal operation of the process reactions inside the reaction chamber to a certain extent. Therefore, this also effectively ensures, to some extent, the yield of the final manufactured product.

[0013] In conjunction with the first aspect, optionally, the side plate includes a lower end of the side plate and an upper end of the side plate connected to the annular protrusion; the inner diameter of the upper end of the side plate is larger than the inner diameter of the lower end of the side plate, and an annular step is formed between the upper end of the side plate and the lower end of the side plate.

[0014] In the aforementioned reaction chamber, the annular step serves to support the annular protrusion. For annular protrusions made of materials like graphite, which are difficult to install on side plates, the annular step facilitates installation.

[0015] In conjunction with the first aspect, optionally, the inner diameter of the annular protrusion gradually increases from the middle end of the annular protrusion to the lower end of the annular protrusion.

[0016] The aforementioned reaction chamber, through the wedge-shaped structure formed by the lower part of the annular protrusion, further reduces the impact on the flow field of gas entering from the opening of the reaction chamber, thereby ensuring the yield of the final manufactured products to a greater extent.

[0017] In conjunction with the first aspect, optionally, the width of the annular step matches the width of the lower end of the annular protrusion.

[0018] The aforementioned reaction chamber, through a structural design in which the width of the lower end of the annular protrusion matches the width of the annular step, achieves sufficient support of the annular step for the annular protrusion while preventing the annular step from protruding beyond the lower end of the annular protrusion.

[0019] In conjunction with the first aspect, optionally, the distance between the middle end of the annular protrusion and the base plate is greater than the distance between the top of the heating mechanism away from the base plate and the base plate.

[0020] The aforementioned reaction chamber, through its structural design where the height of the middle end of the annular protrusion is higher than the height of the top end of the heating mechanism, expands the gap between the annular protrusion and the top end of the heating mechanism, thereby further reducing the impact on the flow field of gas entering from the opening of the reaction chamber, and ultimately ensuring the yield of the final manufactured products to a greater extent.

[0021] In a second aspect, this application provides a chemical vapor deposition apparatus, including a graphite disk and a reaction chamber as described in the first aspect; the graphite disk is disposed at the top of the heating mechanism away from the base plate.

[0022] The chemical vapor deposition apparatus described above has the same beneficial effects as the first aspect or any of the optional embodiments of the first aspect, and will not be repeated here.

[0023] In conjunction with the second aspect, optionally, the minimum distance between the graphite disk and the annular protrusion is 1 to 100 mm.

[0024] The aforementioned chemical vapor deposition equipment, by limiting the minimum distance between the graphite disk and the annular protrusion to a range of 1–100 mm, further reduces the impact on the flow field after the gas enters from the opening of the reaction chamber, ultimately ensuring a higher yield of the final manufactured products.

[0025] In summary, the reaction chamber and chemical vapor deposition equipment provided in this application, by providing an annular protrusion at the upper end of the side plate near the opening of the reaction chamber, increases the wall thickness of the corresponding coolant channel at the upper end of the side plate. This, to a certain extent, avoids the peeling and detachment of process reaction deposits from the inner wall of the reaction chamber due to excessive temperature differences, ultimately improving the yield of the final manufactured product. By specifically using graphite as the material for the annular protrusion, the manufacturing cost of the reaction chamber is reduced, and the service life of the reaction chamber is also increased. By making the height of the lower end of the annular protrusion lower than the height of the top of the heating mechanism, the influence on the flow field after the gas enters from the opening of the reaction chamber is reduced, ensuring the normal progress of process reactions inside the reaction chamber to a certain extent. Therefore, this also effectively ensures the yield of the final manufactured product to a certain extent. In particular, the wedge-shaped structure formed by the lower end of the annular protrusion and the structural design of the middle end of the annular protrusion being higher than the height of the top of the heating mechanism further reduce the influence on the flow field after the gas enters from the opening of the reaction chamber, ultimately ensuring the yield of the final manufactured product to a greater extent. Attached Figure Description

[0026] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a first cross-sectional view of the reaction chamber provided in an embodiment of this application;

[0028] Figure 2 This is a second cross-sectional view of the reaction chamber provided in an embodiment of this application;

[0029] Figure 3 for Figure 1 A magnified view of a section at point A in the middle;

[0030] Figure 4 A cross-sectional view of a chemical vapor deposition apparatus provided in an embodiment of this application;

[0031] Figure 5 This is a partial enlarged view of the graphite disk and the annular protrusion in the chemical vapor deposition apparatus provided in the embodiments of this application.

[0032] Icons: 100, Reaction chamber; 110, Base plate; 120, Side plate; 121, Lower end of side plate; 122, Upper end of side plate; 123, Annular step; 130, Heating mechanism; 140, Annular protrusion; 141, Upper end of Annular protrusion; 142, Lower end of Annular protrusion; 143, Middle end of Annular protrusion; 10, Chemical vapor deposition equipment; 200, Graphite disk. Detailed Implementation

[0033] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0034] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0035] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0036] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the utility model product is in use. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0037] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0038] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0039] Please refer to Figure 1 , Figure 1 This is a first cross-sectional view of the reaction chamber 100 provided in this application embodiment. The reaction chamber 100 provided in this application embodiment may include a base plate 110, a side plate 120, a heating mechanism 130, and an annular protrusion 140. The side plate 120 may surround the base plate 110 along its edge to form a reaction chamber. The reaction chamber may have an opening for gas to flow in, and the opening may face away from the base plate 110. The heating mechanism 130 may be connected to the base plate 110 within the reaction chamber. A coolant channel may be provided within the side plate 120. The extension direction of the coolant channel may include: an extension direction from the bottom end of the side plate 120 near the base plate 110 to the top end of the side plate 120 near the opening of the reaction chamber. The annular protrusion 140 may be provided at the upper end 122 of the side plate 120 near the opening of the reaction chamber. The annular protrusion 140 is located on the side of the coolant channel near the reaction chamber and may extend into the interior of the reaction chamber.

[0040] The base plate 110 can be circular or square. Correspondingly, the reaction chamber formed with the side plate 120 can be cylindrical or prismatic. Of course, the base plate 110 can also be other shapes, and this embodiment does not impose specific limitations on this. The bottom wall and the side plate 120 can be made of stainless steel. The heating mechanism 130 can be selected from the prior art according to the specific process carried out in the reaction chamber 100. The coolant channel can be a water-cooled channel, an oil-cooled channel, etc. Its extension direction can be vertical. The annular protrusion 140 can be made of a material with higher temperature resistance than the side plate 120, or it can be made of the same material as the side plate 120. The annular protrusion 140 and the side plate 120 can be integrally formed, or they can be manufactured separately and then connected together by bonding, welding, snap-fitting, etc. The internal structure of the annular protrusion 140 can be solid or honeycomb.

[0041] In the above implementation process, by providing an annular protrusion 140 at the upper end 122 of the side plate 120 near the opening of the reaction chamber, the wall thickness of the portion of the coolant channel corresponding to the upper end 122 of the side plate is increased, thereby alleviating the sudden temperature drop between the inside of the chamber and the inside of the coolant channel. This, in turn, avoids to some extent the peeling and detachment of process reaction deposits from the inner wall of the reaction chamber due to excessive temperature difference, and ultimately improves the yield of the final manufactured product.

[0042] In some alternative embodiments, the temperature resistance of the annular protrusion 140 may be higher than that of the side plate 120.

[0043] Taking the side plate 120 as an example, which is made of stainless steel, the material of the annular protrusion 140 can be graphite, quartz, aerogel, etc.

[0044] In the above process, by using a material with a higher temperature resistance than the side plate 120 as the material for making the annular protrusion 140, the sudden temperature drop between the inside of the chamber and the inside of the coolant channel is further mitigated, thereby avoiding the peeling and detachment of process reaction deposits on the inner wall of the reaction chamber due to excessive temperature difference to a greater extent, and ultimately further improving the yield of the final manufactured product.

[0045] In some alternative implementations, the material of the annular protrusion 140 may include graphite.

[0046] In the above implementation process, by specifically using graphite as the material for the annular protrusion 140, it exhibits higher high-temperature resistance and greater ease of processing compared to aerogels, quartz, and other materials. Therefore, it reduces the manufacturing cost of the reaction chamber and also increases its service life.

[0047] Please refer to Figure 2 and Figure 3 , Figure 2 This is a second cross-sectional view of the reaction chamber 100 provided in the embodiments of this application; Figure 3 yes Figure 1 In the enlarged view at point A, in some alternative embodiments, the distance between the lower end 142 of the annular protrusion 140 near the base plate 110 and the base plate 110 can be less than the distance between the top end of the heating mechanism 130 away from the base plate 110 and the base plate 110.

[0048] In other words, the height of the lower end 142 of the annular protrusion is lower than the height of the top end of the heating mechanism 130.

[0049] In the above-described process, by making the height of the lower end 142 of the annular protrusion lower than the height of the top end of the heating mechanism 130, the influence on the flow field after the gas enters from the opening of the reaction chamber is reduced, which to a certain extent ensures the normal progress of the process reactions inside the reaction chamber. Therefore, it is also equivalent to ensuring the yield of the final manufactured product to a certain extent.

[0050] Please continue to refer to Figure 2 and Figure 3 In some alternative embodiments, the side plate 120 may include a lower side plate 121 and an upper side plate 122 connected to the annular protrusion 140. The inner diameter of the upper side plate 122 may be larger than the inner diameter of the lower side plate 121, and an annular step 123 may be formed between the upper side plate 122 and the lower side plate 121.

[0051] The step surface of the annular step 123 can face upwards, that is, it can be aligned with the orientation of the opening of the reaction chamber.

[0052] In the above implementation process, the annular step 123 serves to support the annular protrusion 140. For the annular step 123, especially for the annular protrusion 140 made of materials such as graphite, which is difficult to install on the side plate 120, the installation of the annular step 123 is more convenient.

[0053] Please continue to refer to Figure 2 and Figure 3 In some alternative embodiments, the inner diameter of the annular protrusion 140 can gradually increase from the middle end 143 of the annular protrusion to the lower end 142 of the annular protrusion.

[0054] In other words, the lower part of the annular protrusion 140 forms an annular wedge surface.

[0055] In the above process, the wedge-shaped structure formed by the lower end 142 of the annular protrusion further reduces the impact on the flow field after the gas enters from the opening of the reaction chamber, thereby ensuring the yield of the final manufactured product to a greater extent.

[0056] Please continue to refer to Figure 2 and Figure 3 In some alternative embodiments, the width of the annular step 123 may match the width of the lower end of the annular protrusion 142.

[0057] In other words, the width of the lower end 142 of the annular protrusion can be equal to the width of the annular step 123.

[0058] In the above implementation process, by matching the width of the lower end 142 of the annular protrusion with the width of the annular step 123, the annular step 123 is able to fully support the annular protrusion 140 while preventing the annular step 123 from protruding from the lower end 142 of the annular protrusion.

[0059] Please continue to refer to Figure 2 and Figure 3 In some alternative embodiments, the distance between the middle end 143 of the annular protrusion and the base plate 110 may be greater than the distance between the top of the heating mechanism 130 away from the base plate 110 and the base plate 110.

[0060] Based on the previous embodiment, the middle end 143 of the annular protrusion can be the upper end of the annular wedge surface. Furthermore, the height of the middle end 143 of the annular protrusion can be higher than the height of the top end of the heating mechanism 130.

[0061] In the above implementation process, by using a structural design where the height of the middle end 143 of the annular protrusion is higher than the height of the top end of the heating mechanism 130, the gap between the annular protrusion 140 and the top end of the heating mechanism 130 is expanded, thereby further reducing the impact on the flow field after the gas enters from the opening of the reaction chamber, and ultimately ensuring the yield of the final manufactured products to a greater extent.

[0062] Please refer to Figure 4 , Figure 4 This is a cross-sectional view of the chemical vapor deposition apparatus 10 provided in an embodiment of this application. Based on the same concept, an embodiment of this application provides a chemical vapor deposition apparatus 10, which may include a graphite disk 200 and the reaction chamber 100 described above. The graphite disk 200 may be disposed at the top of the heating mechanism 130 away from the base plate 110.

[0063] The chemical vapor deposition apparatus 10 provided in this application embodiment may further include a rotating mechanism and a lifting mechanism. The rotating mechanism can be used to drive the heating mechanism 130 to rotate, and the lifting mechanism can be used to drive the reaction chamber 100 to move up and down.

[0064] The above implementation process is the same as that of the reaction chamber 100 described above, and will not be repeated here.

[0065] Please refer to Figure 5 , Figure 5 This is a partially enlarged view of the graphite disk 200 and the annular protrusion 140 in the chemical vapor deposition apparatus 10 provided in this application embodiment. In some optional embodiments, the minimum distance between the graphite disk 200 and the annular protrusion 140 can be 1 to 100 mm.

[0066] In other words, the minimum distance between the graphite disk 200 and the annular protrusion 140 can be 1 mm or 100 mm.

[0067] In the above implementation process, by limiting the minimum distance between the graphite disk 200 and the annular protrusion 140 to a range of 1 to 100 mm, the impact on the flow field after the gas enters from the opening of the reaction chamber 100 is further reduced, ultimately ensuring a higher yield of the final manufactured product. In summary, the reaction chamber 100 and chemical vapor deposition apparatus 10 provided in the various embodiments of this application, by providing the annular protrusion 140 at the upper end 122 of the side plate 120 near the opening of the reaction chamber, increase the wall thickness of the portion of the coolant channel corresponding to the upper end 122 of the side plate. This, to a certain extent, avoids the peeling and detachment of process reaction deposits from the inner wall of the reaction chamber due to excessive temperature differences, ultimately improving the yield of the final manufactured product. By specifically using graphite as the material of the annular protrusion 140, the manufacturing cost of the reaction chamber is reduced, and the service life of the reaction chamber is also improved. By making the lower end 142 of the annular protrusion lower than the top end of the heating mechanism 130, the impact on the flow field after the gas enters from the opening of the reaction chamber is reduced, ensuring the normal operation of the process reactions inside the reaction chamber to a certain extent. Therefore, this also effectively ensures the yield of the final manufactured product to a certain degree. In particular, the wedge-shaped structure formed by the lower end 142 of the annular protrusion and the structural design of the middle end 143 of the annular protrusion being higher than the top end of the heating mechanism 130 further reduce the impact on the flow field after the gas enters from the opening of the reaction chamber, ultimately ensuring the yield of the final manufactured product to an even greater extent.

[0068] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A reaction chamber, characterized in that, Includes a base plate, side plates, heating mechanism, and annular protrusion; The side plate surrounds the bottom plate along the edge of the bottom plate, forming a reaction chamber; The reaction chamber has an opening for gas to flow in, and the opening is oriented away from the bottom plate; The heating mechanism is connected to the base plate within the reaction chamber; The side plate is provided with a coolant channel; The extension direction of the coolant channel includes: an extension direction from the bottom end of the side plate near the bottom plate to the top end of the side plate near the opening of the reaction chamber; The annular protrusion is disposed on the upper end of the side plate near the opening of the reaction chamber; the annular protrusion is located on the side of the coolant channel near the reaction chamber and extends into the interior of the reaction chamber.

2. The reaction chamber according to claim 1, characterized in that, in, The annular protrusion has a higher temperature resistance than the side plate.

3. The reaction chamber according to claim 1, characterized in that, The distance between the lower end of the annular protrusion near the base plate and the base plate is less than the distance between the top end of the heating mechanism away from the base plate and the base plate.

4. The reaction chamber according to claim 1, characterized in that, The side plate includes a lower end of the side plate and an upper end of the side plate connected to the annular protrusion; The inner diameter of the upper end of the side plate is larger than the inner diameter of the lower end of the side plate, and an annular step is formed between the upper end and the lower end of the side plate.

5. The reaction chamber according to claim 4, characterized in that, The inner diameter of the annular protrusion gradually increases from the middle end of the annular protrusion to the lower end of the annular protrusion.

6. The reaction chamber according to claim 5, characterized in that, The width of the annular step matches the width of the lower end of the annular protrusion.

7. The reaction chamber according to claim 6, characterized in that, The distance between the middle end of the annular protrusion and the base plate is greater than the distance between the top of the heating mechanism away from the base plate and the base plate.

8. A chemical vapor deposition apparatus, characterized in that, Includes a graphite disk and a reaction chamber as described in any one of claims 1 to 7; The graphite disk is positioned at the top of the heating mechanism away from the base plate.

9. The chemical vapor deposition apparatus according to claim 8, characterized in that, The minimum distance between the graphite disk and the annular protrusion is 1 to 100 mm.