Sample table for reactive ion etching machine

Abstract

The utility model discloses a sample table for a reactive ion etching machine, and belongs to the field of etching machines. Comprising a sample stage and a cover; a plurality of sample grooves are formed in the upper end of the sample table, and grooves are formed in the bottom ends of the sample grooves; a supporting rod is fixedly connected to the bottom face of the groove, and a containing table is fixedly connected to the upper end of the supporting rod. An air inlet I is formed in the bottom end of the groove, an air inlet II is formed in the center of the bottom end of the sample table, and the air inlet II is communicated with the air inlet I through an air inlet channel; a vertical through hole is formed in the placing table, and a plurality of centrosymmetric exhaust channels communicated with the through hole are formed in the placing table; a plurality of etching grooves are formed in the cover, and the cover is buckled at the upper end of the sample table; a plurality of exhaust holes vertically penetrating through the sample table are formed in the sample table; and the inner wall of the sample groove is fixedly connected with a spiral plate. Through the spiral plate on the inner wall of the sample groove, the gas guide channel is added, so that cooling gas can circulate on the side surface of the sample in the processing process, the heat dissipation effect of the side surface of the sample is improved, and the heat dissipation effect of the whole sample is further improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to a sample stage for reaction ion etching machine belongs to etching machine field. BACKGROUND

[0002] The etching machine tray in the prior art is the carrier of the semiconductor silicon wafer in the action process of the etching machine, realizes the functions such as silicon wafer clamping, positioning, guiding helium cooling, and is directly contacted with the silicon wafer, and is one of the core components for realizing the etching process.

[0003] The utility model with patent number CN219267594U and patent name tray device and etching machine with the tray device can improve wafer cooling effect through the tray device. However, in actual use, the tray can only cool the bottom of the sample, and the cooling effect is poor, so the tray is improved. UTILITY MODEL CONTENT

[0004] The utility model aims at solving the above problems existing in the background art, and provides a sample stage for reaction ion etching machine.

[0005] The utility model realizes the above-mentioned purpose, and adopts the technical scheme as follows:

[0006] A sample stage for reaction ion etching machine, comprising a sample stage and a cover, a plurality of sample grooves are arranged at the upper end of the sample stage, and a groove is arranged at the bottom end of the sample groove; a support rod is fixedly connected to the bottom surface of the groove, and the upper end of the support rod is fixedly connected to a placing table; an air inlet I is arranged at the bottom end of the groove, an air inlet II is arranged at the center of the bottom end of the sample stage, and the air inlet II is communicated with the air inlet I through an air inlet channel; a vertical perforation is arranged on the placing table, and a plurality of center-symmetrical air outlet channels communicated with the perforation are arranged on the placing table; a plurality of etching grooves are arranged on the cover, and the cover is buckled at the upper end of the sample stage; a plurality of air exhaust holes vertically penetrating the sample stage are arranged on the sample stage; and a spiral plate is fixedly connected to the inner wall of the sample groove.

[0007] Compared with the prior art, the utility model has the beneficial effects that: through the spiral plate on the inner wall of the sample groove, the air guide channel is increased, the side surface of the sample can also circulate cooling gas during processing, the side surface heat dissipation effect of the sample is increased, and the overall heat dissipation effect of the sample is improved. BRIEF DESCRIPTION OF DRAWINGS

[0008] Fig. 1 is a sectional view of the sample stage for reaction ion etching machine of the utility model;

[0009] Fig. 2 is a sectional view of the sample stage for reaction ion etching machine of the utility model;

[0010] Fig. 3 This is a top view of the sample stage of a reactive ion etching machine according to the present invention;

[0011] Fig. 4 This is a bottom view of the cover of a sample stage for a reactive ion etching machine according to this utility model;

[0012] Fig. 5 This is a top view of the sample stage placement platform for a reactive ion etching machine according to this utility model.

[0013] In the diagram: 1. Cover; 11. Etched groove; 12. Anti-slip pad; 13. Limiting ring; 2. Sample; 3. Sample stage; 31. Air inlet II; 32. Air inlet channel; 33. Air inlet I; 34. Groove; 35. Sample groove; 36. Spiral plate; 37. Exhaust hole; 4. Support rod; 5. Placement platform; 51. Exhaust channel; 52. Perforation. Detailed Implementation

[0014] The technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of this utility model. Obviously, the described embodiments are only some embodiments of the utility model, not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this utility model without creative effort are within the protection scope of this utility model.

[0015] Specific implementation method one: as follows Figs. 1-3 As shown, this embodiment describes a sample stage for a reactive ion etching machine, including a sample stage 3 and a cover 1; the upper end of the sample stage 3 is provided with multiple sample slots 35, and the bottom end of the sample slots 35 is provided with a groove 34; a support rod 4 is fixedly connected to the bottom surface of the groove 34, and a placement platform 5 is fixedly connected to the upper end of the support rod 4; the bottom end of the groove 34 is provided with an air inlet I 33, and the bottom center of the sample stage 3 is provided with an air inlet II 31, which is connected to the air inlet I 33 through an air inlet channel 32; the placement platform 5 is provided with a vertical perforation 52, and the placement platform 5 is provided with multiple centrally symmetrical exhaust channels 51 connected to the perforation 52; the cover 1 is provided with multiple etching grooves 11, and the cover 1 is fastened to the upper end of the sample stage 3; the sample stage 3 is provided with multiple vertical exhaust holes 37 penetrating the sample stage 3; a spiral plate 36 is fixedly connected to the inner wall of the sample slots 35. The spiral plate 36 contacts the sample 2 through its inner wall, supporting the sample 2. It also connects to the exhaust channel 51 through the gap of the spiral plate 36, allowing cooling gas to enter the gap of the spiral plate 36 through the exhaust channel 51, thereby cooling the side of the sample 2 and improving the cooling effect.

[0016] The etching groove 11, the groove 34 and the sample groove 35 are coaxial. The upper end surface of the sample 2 is machined through the etching groove 11 while ensuring that the sample 2 can be smoothly installed inside the sample groove 35.

[0017] The diameter of the air inlet II 31 is greater than that of the air inlet I 33. The diameter of the air inlet II 31 is large, so that the air intake per unit time is greater than that of the air inlet I 33, ensuring that sufficient cooling gas can enter each sample groove 35.

[0018] The diameter of the placement table 5 is equal to the diameter of the groove 34.

[0019] The diameter of the sample groove 35 is greater than the diameter of the groove 34, and the spiral plate 36 is in contact with the outer circumferential surface of the sample 2. The sample 2 is assisted and limited by the spiral plate 36.

[0020] The lower end surface of the cover 1 is fixedly connected with a limiting ring 13; the inner circumferential surface of the limiting ring 13 is fixedly connected with an anti-skid pad 12. Through the setting of the limiting ring 13 and the anti-skid pad 12, the sample 2 is further limited.

[0021] The limiting ring 13 is coaxial with the corresponding etching groove 11.

[0022] In use, the sample 2 is placed in the sample groove 35 on the upper end of the placement table 5, and then the cover 1 is buckled on the sample table 3 through the buckle, so that the anti-skid pad 12 on the inner wall of the limiting ring 13 is sleeved on the outer periphery of the sample 2, further limiting the position; cooling gas is introduced from the air inlet II 31, the cooling gas enters the plurality of air inlets I 33 along the air inlet channel 32, and then enters the corresponding grooves 34 through the air inlets I 33, and then contacts the lower end surface of the sample 2 through the perforations 52, and enters the sample groove 35 along the exhaust channel 51, after entering the sample groove 35, spirally rises along the gap of the spiral plate 36 on the inner wall of the sample groove 35, so that it is fully in contact with the side surface of the sample 2 and carries away heat, when the cooling gas is discharged from the sample groove 35, due to the blockage of the cover 1 and the limiting ring 13, it can only be discharged through the exhaust hole 37, and the cooling is completed.

Claims

1. A sample stage for a reactive ion etching machine, characterized by: The utility model provides a sample platform, including sample platform (3) and cover (1), the upper end of sample platform (3) is equipped with a plurality of sample groove (35), and the bottom end of sample groove (35) is equipped with recess (34), the bottom surface of recess (34) is fixedly connected with support rod (4), and the upper end of support rod (4) is fixedly connected with placing table (5), the bottom end of recess (34) is equipped with air inlet I (33), and the bottom end center of sample platform (3) is equipped with air inlet II (31), and air inlet II (31) is communicated with air inlet I (33) through air inlet channel (32), the placing table (5) is equipped with vertical perforation (52), and the placing table (5) is equipped with a plurality of exhaust channel (51) that is communicated with perforation (52) and is central symmetry, the cover (1) is equipped with a plurality of etching groove (11), and cover (1) buckling is in the upper end of sample platform (3), the sample platform (3) is equipped with a plurality of vertical exhaust hole (37) that penetrates sample platform (3), and the inner wall of sample groove (35) is fixedly connected with spiral plate (36).

2. The sample stage for a reactive ion etching machine according to claim 1, wherein: The etching groove (11), the recess (34) and the sample groove (35) are coaxial.

3. The sample stage for a reactive ion etching machine according to claim 2, wherein: The diameter of the air inlet II (31) is greater than the diameter of the air inlet I (33).

4. The sample stage for a reactive ion etching machine according to claim 1 or 3, wherein: The diameter of the placing table (5) is equal to the diameter of the recess (34).

5. The sample stage for a reactive ion etching machine of claim 4, wherein: The diameter of the sample groove (35) is greater than the diameter of the recess (34), and the spiral plate (36) is in contact with the outer circular surface of the sample (2).

6. The sample stage for a reactive ion etching machine of claim 5, wherein: The lower end surface of the cover (1) is fixedly connected with the limiting ring (13); the inner circular surface of the limiting ring (13) is fixedly connected with the anti-skid pad (12).

7. The sample stage for a reactive ion etching machine of claim 6, wherein: The limiting ring (13) is coaxial with the corresponding etching groove (11).

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