Power device integration module

Abstract

The utility model belongs to the technical field of semiconductor packaging, and particularly relates to a power device integrated module, which comprises a bottom plate, a metal insulating substrate and a semiconductor chip which are stacked, a plurality of terminals of which one ends are welded on the metal insulating substrate, and a plastic packaging body which completely covers and is attached to the metal insulating substrate and the semiconductor chip, the internal gap of the power device integration module is filled with the plastic package body, the metal bonding wire is connected between the metal insulation substrate and the semiconductor chip, the plastic package body can completely wrap partial structures of the metal insulation substrate, the semiconductor chip, the metal bonding wire and the terminal through the fluidity of the plastic package body when the plastic package body is not cured, and the plastic package body is tightly combined with the bottom plate after being cured. The packaging structure is formed, the sealing performance is high, water vapor, dust, sulfide and the like can be effectively prevented from polluting and damaging the module, and the internal structure of the module is more stably fixed.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the technical field of semiconductor packaging, and particularly relates to a power device integrated module. BACKGROUND

[0002] IGBT has a series of advantages such as fast switching speed, large capacity, low saturation voltage drop and voltage type driving, and is more and more favored by the market in the industrial field and the new energy field.

[0003] In some use environments, the power device integrated module is affected by the external environment, which includes external dust, water vapor, sulfide and the like, which will seriously threaten the use performance of the module, the traditional power integrated module adopts a shell and silica gel to realize circuit protection, but this has little effect on the moisture-proof and sulfur-proof capacity of the device, and a more reliable protection method needs to be considered. The connection firmness of the terminals in the module and the metal insulation substrate is not only affected by the connection mode between the two, but also affected by the connection mode of the terminals and other components, the terminals in the existing power device integrated module are fixedly connected separately, and the vibration connection reliability is low. SUMMARY

[0004] The utility model wants to solve the technical problem that a power device integrated module is provided, which has high sealing performance and high terminal connection reliability.

[0005] The utility model provides a power device integrated module, include: the bottom plate, metal insulation substrate and semiconductor chip of laminated arrangement, a plurality of terminals are welded on the metal insulation substrate on one end and the plastic package that completely covers and fits the metal insulation substrate and the semiconductor chip, the plastic package fills the internal gap of the power device integrated module, the metal insulation substrate is connected with the semiconductor chip and has metal bonding wire.

[0006] Optionally, the terminal has a groove on the surface that increases the bonding area with the plastic package.

[0007] Optionally, the groove includes a planar groove and / or an arc-shaped groove.

[0008] Optionally, the part of the terminal located in the plastic package has a plurality of bending structures.

[0009] Optionally, the part of the terminal protruding from the plastic package has an elastic deformation hole, and the terminal structure on both sides of the elastic deformation hole is interference-fitted with the hole of the external PCB.

[0010] Optionally, the top of the plastic package has a plurality of protrusions, and the protrusions are connected with the external PCB through screws.

[0011] Optionally, the power device integrated module comprises a frame body which is integrally formed with the plurality of terminals.

[0012] Optionally, positioning holes are formed on the terminals and / or the frame body, and the positioning holes are matched with external positioning tools to position and install the terminals.

[0013] Optionally, the semiconductor chip comprises an IGBT chip, an FRD chip and / or a SiC chip.

[0014] Optionally, a welding layer is arranged between the bottom plate and the metal insulation substrate, and between the metal insulation substrate and the semiconductor chip.

[0015] The power device integrated module has the advantages that the flowability of the plastic sealing body during solidification can completely wrap the metal insulation substrate, the semiconductor chip, the metal bonding wire and part of the structure of the terminal, and the plastic sealing body is tightly combined with the bottom plate after solidification to form a packaging structure, the sealing property is high, water vapor, dust, sulfides and other pollutants can be effectively prevented from damaging the module, and the internal structure of the module is more stably fixed, the power device integrated module is suitable for a multi-circuit topology power module, has a definition of multiple terminals, and the position of the terminal can be flexibly changed, so that the cost can be reduced in large-scale manufacturing. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 FIG. 4 is a partial structure sectional view of the power device integrated module of the utility model;

[0017] Figure 2 FIG. 5 is a schematic view of the terminal and the frame body of the utility model in an integral structure;

[0018] Figure 3 FIG. 6 is an assembly state schematic view of the terminal of the utility model;

[0019] Figure 4 FIG. 7 is a schematic view of the power device integrated module of the utility model after the plastic sealing body is formed;

[0020] Figure 5 FIG. 8 is a structure schematic view of the frame body of the utility model after being cut off.

[0021] In the figure, 10 is a bottom plate, 20 is a metal insulation substrate, 30 is a semiconductor chip, 40 is a terminal, 401 is a planar groove, 402 is an arc-shaped groove, 403 is a positioning hole, 404 is an elastic deformation hole, 50 is a plastic sealing body, 501 is a protrusion, 60 is a metal bonding wire, 70 is a welding layer, 80 is a PCB plate, and 90 is a frame body. DETAILED DESCRIPTION

[0022] For example, Figures 1-5As shown, the utility model provides a kind of power device integrated module, comprising: the bottom plate 10 of laminated arrangement, metal insulation substrate 20 and semiconductor chip 30, the plurality of terminals 40 of one end welding on metal insulation substrate 20 and the plastic package 50 of completely covering and adhering metal insulation substrate 20 and semiconductor chip 30, plastic package 50 fills the internal gap of power device integrated module, metal insulation substrate 20 is connected with metal bonding wire 60 between semiconductor chip 30.

[0023] Compared with prior art, the power device integrated module provided by the utility model, by the flowability of plastic package 50 when not solidified, can completely wrap the partial structure of metal insulation substrate 20, semiconductor chip 30, metal bonding wire 60 and terminal 40, and is tightly combined with bottom plate 10 after solidification, forms packaging structure, and the sealing property is higher, can effectively prevent water vapor, dust, sulfide and other pollution from damaging module, and make the internal structure of module (the abbreviation of power device integrated module) be more stably fixed, and the power device integrated module is suitable for multi-circuit topology power module, has the definition of multiple terminals 40, and the position of terminal 40 can also be flexibly changed, which is beneficial to reducing cost in large-scale manufacturing.

[0024] It should be noted that plastic package 50 is made of resin material, and is formed by mold pouring after the positioning and connection of each component of the module are good. Bottom plate 10 is made of metal material, and has good heat dissipation. Metal insulation substrate 20 can be DBC substrate or AMB substrate, and the ceramic plate therein can be made of aluminum oxide, silicon nitride or aluminum nitride; terminal 40 and metal insulation substrate 20 can be reliably connected by ultrasonic bonding, welding and other technologies.

[0025] In one embodiment, terminal 40 has a groove on the bonding surface with plastic package 50. In this way, the combination of terminal 40 and plastic package 50 is more firm, and the stability of terminal 40 is improved. Specifically, according to the characteristics of different parts of terminal 40, the groove includes flat groove 401 and / or arc-shaped groove 402, and the number of flat groove 401 and arc-shaped groove 402 is not uniquely limited; preferably, flat grooves 401 are arranged symmetrically in pairs, and arc-shaped grooves 402 are arranged symmetrically in pairs, so that the stress at the combination of terminal 40 and plastic package 50 is balanced.

[0026] In one embodiment, the part of terminal 40 located in plastic package 50 has a plurality of curved structures. Also in order to improve the bonding surface of terminal 40 and plastic package 50, improve the connection strength.

[0027] In one embodiment, the part of the terminal 40 protruding from the plastic package 50 has an elastic deformation hole 404, and the structure of the terminal 40 on both sides of the elastic deformation hole 404 is in interference fit with the hole of the external PCB 80. Specifically, the PCB 80 is fixed by plugging with the terminal 40. In contrast, the conventional straight terminal 40 is connected to the outside by welding. In addition, the structure of the terminal 40 can also be deformed in other ways, such as combining multiple terminals 40 together to form a structure with stronger current-carrying capacity. For the same power port, this design can be used to improve the overall current-carrying structure and packaging density of the module.

[0028] In one embodiment, the top of the plastic package 50 has a plurality of protrusions 501, and the protrusions 501 are connected to the external PCB 80 by screws. Specifically, the height of the protrusions 501 is not less than 3.5 mm, which is used for heat dissipation of the PCB 80. Further, the top of the plastic package 50 has a recess to avoid interference between the module and the PCB 80.

[0029] In one embodiment, as shown in Figure 2 , the power device integrated module includes a frame body 90 that can be cut off, and the frame body 90 is integrally formed with a plurality of terminals 40. As shown in Figure 3 , the plurality of terminals 40 can be fixed as a whole, reducing the complexity of fixing the terminals 40 one by one, and making the installation of the terminals 40 more convenient and efficient. As shown in Figure 4 , the frame body 90 is not cut off after the plastic package 50 is fixed and formed; as shown in Figure 5 , the appearance structure of the module obtained after the frame body 90 is cut off.

[0030] In one embodiment, a positioning hole 403 is provided on the terminal 40 and / or the frame body 90, and the positioning hole 403 is matched with an external positioning tool for positioning and installing the terminal 40. The specification, number and position of the positioning hole 403 are not uniquely limited and can be selected according to design needs.

[0031] In one embodiment, the semiconductor chip 30 includes an IGBT chip, an FRD chip and / or a SiC chip. It can be understood that the semiconductor chip 30 provided on the insulating substrate 20 has multiple semiconductor chips 30, and the multiple semiconductor chips 30 can be one or more of the IGBT chip, the FRD chip and the SiC chip.

[0032] In one embodiment, the bottom plate 10 and the metal insulating substrate 20 have a welding layer 70, and the metal insulating substrate 20 and the semiconductor chip 30 have a welding layer 70. The welding layer 70 can be welded or sintered.

[0033] Those skilled in the art should understand that the above discussion of any embodiment is only intended to be illustrative and is not intended to be limiting to the scope of the present application; the above embodiments or technical features among different embodiments can also be combined, the steps can be implemented in any order, and there are many other changes such as the different aspects of one or more embodiments of the present application as described above, which are not provided in details for the sake of brevity.

[0034] One or more embodiments of the present application are intended to cover all such alternatives, modifications, and variations as fall within the broad scope of the present application. Accordingly, any one of the above-cited examples, or any other unrecited example, can be prepared by any method and materials equivalent to those described above, without departing from the spirit and scope of one or more embodiments of the present application.

Claims

1. A power device integrated module, characterized by, The application relates to a power device integrated module, which comprises a bottom plate (10), a metal insulation substrate (20) and a semiconductor chip (30) arranged in layers, a plurality of terminals (40) welded at one end on the metal insulation substrate (20), and a plastic encapsulating body (50) completely covering and adhering to the metal insulation substrate (20) and the semiconductor chip (30), wherein the plastic encapsulating body (50) fills the internal space of the power device integrated module, a metal bonding wire (60) is connected between the metal insulation substrate (20) and the semiconductor chip (30), the part of the terminal (40) protruding from the plastic encapsulating body (50) has an elastic deformation hole (404), and the structure of the terminal (40) on the two sides of the elastic deformation hole (404) is in interference fit with the hole of an external PCB (80). The terminal (40) has a groove increasing the bonding surface with the plastic encapsulating body (50).

2. The power device integrated module according to claim 1, characterized by The groove comprises a planar groove (401) and / or an arc-shaped groove (402).

3. The power device integrated module according to claim 2, characterized by The part of the terminal (40) located in the plastic encapsulating body (50) has a plurality of bending structures.

4. The power device integrated module according to claim 1, characterized by, The top of the plastic encapsulating body (50) has a plurality of protrusions (501), and the protrusions (501) are connected with the external PCB (80) through screws.

5. The power device integrated module according to claim 1, wherein The application further relates to a frame body (90) which can be cut off and is integrally formed with the plurality of terminals (40).

6. The power device integrated module according to any one of claims 1 to 5, characterized by, Positioning holes (403) are formed on the terminal (40) and / or the frame body (90), and the positioning holes (403) are matched with external positioning tools and used for positioning and mounting the terminal (40).

7. The power device integrated module according to claim 6, characterized by The semiconductor chip (30) comprises an IGBT chip, an FRD chip and / or a SiC chip.

8. The power device integrated module according to any one of claims 1 to 5, characterized by, The bottom plate (10) and the metal insulation substrate (20) have a welding layer (70), and the metal insulation substrate (20) and the semiconductor chip (30) have a welding layer (70).

9. The power device integrated module according to any one of claims 1 to 5, characterized by, ​

Images