Solar blind ultraviolet detector

Abstract

The utility model discloses a solar blind ultraviolet detector, and belongs to the technical field of semiconductor photoelectric detectors. The solar blind ultraviolet detector comprises a substrate, a GaN buffer layer, an AlGaN insertion layer, a GaN transmission layer, a first insulating layer, a Ga2O3 absorption layer, a metal layer, a cathode electrode and an anode electrode, the substrate, the GaN buffer layer, the AlGaN insertion layer and the GaN transmission layer are sequentially arranged from bottom to top; a groove is formed in the upper surface of the GaN transmission layer, and the first insulating layer is deposited in the groove; a Ga2O3 absorption layer and an anode electrode are arranged on the upper surface of the GaN transmission layer; a metal layer and a cathode electrode are arranged on the upper surface of the absorption layer, and the cathode electrode is in direct contact with the upper surface of the Ga2O3 absorption layer; the Ga2O3 absorption layer covers the first insulation layer. According to the invention, the problem that light current is reduced due to accumulation of photo-generated holes in gallium oxide as an absorption layer is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor photodetectors, and more particularly to a solar blind ultraviolet detector. BACKGROUND

[0002] The solar radiation in the 200nm to 280nm band is absorbed by the ozone layer when passing through the ozone layer, and cannot reach the ground, so this band is called the solar blind band. Due to the small background noise, the solar blind detector has been widely used in the fields of missile early warning, astronomy, chemical and biological analysis, space communication and fire monitoring. As a fourth-generation wide-bandgap semiconductor material, gallium oxide (Ga2O3) has a high bandgap of 4.8eV, and the corresponding maximum cutoff absorption wavelength is about 254nm, so Ga2O3 has natural solar blind detection characteristics. However, the defect density of gallium oxide thin film is high, which will cause a large dark current, resulting in a decrease in the signal-to-noise ratio and sensitivity of the detector. In addition, the carrier mobility of gallium oxide is low, and the photo-generated carriers are prone to local congestion, resulting in poor photoelectric conversion efficiency, and thus causing the performance parameters such as responsivity and external quantum efficiency of the detector to decrease.

[0003] In order to improve the performance of Ga2O3-based ultraviolet detectors, Chinese patent CN 114220878 A discloses a Ga2O3 / GaN solar blind ultraviolet detector with a carrier transport layer and a preparation method thereof. The patent uses the electric field formed by the Schottky contact between the metal and the gallium oxide absorption layer to push the photo-generated electrons from the Ga2O3 absorption layer with many defects into the GaN transport layer with few defects, thereby achieving the purpose of improving the responsivity and response speed of the detector. However, the above-mentioned prior art does not solve the problem of accumulation of photo-generated holes in the gallium oxide absorption layer, which reduces the photocurrent. SUMMARY

[0004] The technical problem to be solved by the present application is to overcome the defects and deficiencies of the prior art solar blind ultraviolet detector using gallium oxide as the absorption layer, which easily leads to accumulation of photo-generated holes and thus reduces the photocurrent. The present application provides a preparation method of a solar blind ultraviolet detector, which realizes effective collection of photo-generated holes by setting a directly contacted cathode electrode on the Ga2O3 absorption layer, avoids accumulation of photo-generated holes in the Ga2O3 absorption layer and recombination with electrons, and at the same time uses the electric field formed by the contact between the Ga2O3 absorption layer and the metal layer to transport the carriers to the GaN transport layer, thereby improving the transport efficiency of the electrons and the photocurrent of the device.

[0005] The above-mentioned object of the present application is achieved by the following technical solutions:

[0006] The application discloses a solar blind ultraviolet detector, which comprises a substrate, a GaN buffer layer, an AlGaN interlayer, a GaN transmission layer, a first insulating layer, a Ga2O3 absorbing layer, a metal layer, a cathode electrode and an anode electrode.

[0007] The substrate, the GaN buffer layer, the AlGaN interlayer and the GaN transmission layer are arranged in sequence from bottom to top.

[0008] The upper surface of the GaN transmission layer is provided with a groove, and the first insulating layer is deposited in the groove.

[0009] The upper surface of the GaN transmission layer is provided with the Ga2O3 absorbing layer and the anode electrode.

[0010] The Ga2O3 absorbing layer covers the first insulating layer.

[0011] The upper surface of the Ga2O3 absorbing layer is provided with the metal layer and the cathode electrode, and the cathode electrode is in direct contact with the upper surface of the Ga2O3 absorbing layer.

[0012] The preparation method of the solar blind ultraviolet detector comprises the following steps.

[0013] S1) A GaN buffer layer, an AlGaN interlayer and a GaN transmission layer are sequentially epitaxially grown on the surface of a substrate by a thin film epitaxial growth technology such as deposition, evaporation or sputtering, so as to obtain an epitaxial layer structure of the detector.

[0014] S2) The middle part of the GaN transmission layer is etched by a photoetch and dry etching process, so as to obtain a groove.

[0015] S3) The first insulating layer deposited in the groove is prepared by a thin film epitaxial growth technology such as deposition, evaporation or sputtering, a photoetch and a wet etching process.

[0016] S4) A Ga2O3 absorbing layer is grown on the GaN transmission layer and the first insulating layer by a thin film epitaxial growth technology such as deposition, evaporation or sputtering.

[0017] S5) The Ga2O3 absorbing layer is etched by a photoetch and dry etching process until the upper surface of part of the GaN transmission layer is exposed, so as to realize the preparation of a mesa.

[0018] S6) A cathode electrode, an anode electrode and a patterned metal layer are prepared by a photoetch technology and a metal evaporation process.

[0019] Preferably, a second insulating layer is further included, and the second insulating layer is arranged between the Ga2O3 absorbing layer and the metal layer and / or the second insulating layer is arranged on the side surface of the Ga2O3 absorbing layer.

[0020] The second insulating layer functions to regulate the electric field in the Ga2O3 absorption layer and protect the Ga2O3 absorption layer from physical damage and chemical corrosion, thereby prolonging the service life of the detector.

[0021] The preparation method of the above-mentioned solar blind ultraviolet detector comprises the following steps:

[0022] S1) sequentially epitaxially growing a GaN buffer layer, an AlGaN insertion layer and a GaN transmission layer on the surface of a substrate by a thin film epitaxial growth technology of deposition, evaporation or sputtering, to obtain an epitaxial layer structure of the detector;

[0023] S2) etching the middle of the GaN transmission layer by a photolithography and dry etching process to obtain a groove;

[0024] S3) manufacturing a first insulating layer deposited in the groove by a thin film epitaxial growth technology of deposition, evaporation or sputtering, a photolithography and a wet etching process;

[0025] S4) growing a Ga2O3 absorption layer on the GaN transmission layer and the first insulating layer by a thin film epitaxial growth technology of deposition, evaporation or sputtering;

[0026] S5) etching the Ga2O3 absorption layer by a photolithography and dry etching process to expose part of the upper surface of the GaN transmission layer, to realize the preparation of a mesa;

[0027] S6) epitaxially growing a second insulating layer on the exposed GaN transmission layer and Ga2O3 absorption layer by a thin film epitaxial growth technology of deposition, evaporation or sputtering;

[0028] S7) manufacturing the second insulating layer on the Ga2O3 absorption layer by a photolithography and wet etching technology, the second insulating layer partially covering the upper surface and sidewall of the Ga2O3 absorption layer;

[0029] S8) manufacturing a cathode electrode, an anode electrode and a metal layer by a photolithography technology and a metal evaporation process.

[0030] Preferably, the projected area of the Ga2O3 absorption layer is 20% to 80% of the area of the upper surface of the GaN transmission layer.

[0031] The projected area of the Ga2O3 absorption layer is related to the responsivity of the solar blind ultraviolet detector, and a larger projected area can absorb more light, thereby having higher response characteristics in the solar blind band.

[0032] Preferably, the projected area of the groove in the GaN transmission layer is 5% to 30% of the surface area of the GaN transmission layer.

[0033] The projected area of the recess in the GaN transmission layer is related to the dark current of the solar blind ultraviolet detector, and a larger projected area forms a larger depletion region, and more electrons are depleted.

[0034] Preferably, the depth of the recess is 0.001-1 μm.

[0035] Preferably, the thickness of the first insulating layer is 0.001-0.5 μm, and the thickness of the first insulating layer is less than or equal to the depth of the recess.

[0036] Preferably, the projected area of the metal layer is 20-80% of the upper surface area of the Ga2O3 absorption layer.

[0037] The projected area of the metal layer is related to the photocurrent of the solar blind ultraviolet detector, and a larger projected area forms a larger depletion region between the metal layer and the Ga2O3 absorption layer, and more electrons are pushed into the GaN transmission layer.

[0038] Preferably, the pattern of the metal layer and the second insulating layer is strip-shaped, rectangular, circular, circular ring-shaped or matrix-distributed, and the second insulating layer and the metal layer have one-to-one correspondence in shape.

[0039] Preferably, the projected area of the second insulating layer is 20-80% of the upper surface area of the Ga2O3 absorption layer, and the thickness of the second insulating layer is 0.001-0.5 μm.

[0040] The projected area of the second insulating layer is related to the photocurrent of the solar blind ultraviolet detector, and a larger projected area forms a larger depletion region between the corresponding deposited metal layer and the Ga2O3 absorption layer, and more electrons are pushed into the GaN transmission layer.

[0041] Preferably, the thickness of the GaN buffer layer is 1-3 μm, the thickness of the AlGaN insertion layer is 0.005-0.5 μm, the thickness of the GaN transmission layer is 0.1-5 μm, the thickness of the Ga2O3 absorption layer is 0.001-0.5 μm, and the thickness of the metal layer is 1-20 nm.

[0042] In the specific embodiment,

[0043] The material of the substrate is specifically a silicon wafer, sapphire or diamond.

[0044] The material of the AlGaN insertion layer is unintentionally doped AlGaN material, and the Al component ranges from 0.1 to 0.5.

[0045] The material of the GaN transmission layer is unintentionally doped GaN material.

[0046] The material of the first insulating layer is one or more of Si3N4, SiO2, Al2O3, HfO2, Ta2O5, AlN, and LiF.

[0047] The material of the Ga2O3 absorption layer is undoped (non-intentionally doped) Ga2O3.

[0048] The material of the cathode electrode, the anode electrode, and the metal layer is the same or different, and is Au, Ag, Ni, ITO, Ti, or Pt.

[0049] The material of the metal layer can be a stack of several metals, for example, a stack of nickel and gold, i.e., a nickel layer-gold layer or a nickel layer-gold layer-nickel layer-gold layer.

[0050] The material of the second insulating layer is one or more of undoped SiO2, Al2O3, Si3N4, HfO2, Ta2O5, AlN, LiF, diamond, or PMMA.

[0051] Compared with the prior art, the beneficial effects of the present application are:

[0052] The present application discloses a solar blind ultraviolet detector with a photo-generated hole release effect, which has a Ga2O3 / GaN / AlGaN / GaN structure. The cathode electrode in direct contact with the Ga2O3 absorption layer is arranged to effectively collect photo-generated holes, thereby avoiding the accumulation of photo-generated holes in the Ga2O3 absorption layer and the recombination of electrons. At the same time, the electric field formed by the contact between the Ga2O3 absorption layer and the metal layer transports the carriers to the GaN transmission layer with high electron mobility, thereby improving the transport efficiency of the electrons and the photocurrent and responsivity of the device.

[0053] Moreover, the solar blind ultraviolet detector of the present application has negative polarization charges at the interface between the AlGaN insertion layer and the GaN transmission layer, and a groove region is formed on the upper surface of the GaN transmission layer. The depletion region formed in the groove region under the condition of no light can pinch off the transport channel of the electrons to reduce the dark current and improve the responsivity and detection rate of the solar blind ultraviolet detector. BRIEF DESCRIPTION OF DRAWINGS

[0054] Figure 1 FIG. 1 is a schematic diagram of the solar blind ultraviolet detector of the present application.

[0055] Figure 2 FIG. 2 is a schematic diagram of the solar blind ultraviolet detector of the present application.

[0056] Figure 3 FIG. 3 is the photo-generated hole concentration in the gallium oxide absorption layer of the solar blind ultraviolet detector of the present application.

[0057] Figure 4The photocurrent of the solar blind ultraviolet detector of embodiment 1 of the present application.

[0058] Wherein, 101. substrate, 102. GaN buffer layer, 103. AlGaN insertion layer, 104. GaN transport layer, 105. first insulating layer, 106. Ga2O3absorption layer, 107. metal layer, 108. cathode electrode, 109. anode electrode, 110. second insulating layer. DETAILED DESCRIPTION

[0059] The application will be further described in conjunction with specific embodiments, but the embodiments do not limit the application in any form. Unless otherwise specified, the raw materials used in the embodiments of the application are commercially available raw materials.

[0060] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0061] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise specifically limited.

[0062] In the present application, unless otherwise specifically defined and limited, the terms "mounting", "connection", "connection", "fixing" and the like should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise specifically defined. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0063] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0064] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0065] Example 1

[0066] like Figure 1 As shown, a solar-blind ultraviolet detector includes a substrate 101, a GaN buffer layer 102, an AlGaN insertion layer 103, a GaN transport layer 104, a first insulating layer 105, a Ga2O3 absorption layer 106, a metal layer 107, a cathode electrode 108, and an anode electrode 109.

[0067] Substrate 101, GaN buffer layer 102, AlGaN insertion layer 103, and GaN transport layer 104 are arranged from bottom to top;

[0068] A groove is formed on the upper surface of the GaN transport layer 104, and the first insulating layer 105 is deposited in the groove;

[0069] A Ga2O3 absorber layer 106 and an anode electrode 109 are disposed on the upper surface of the GaN transport layer 104.

[0070] A patterned metal layer 107 and a cathode electrode 108 are disposed on the upper surface of the Ga2O3 absorber layer 106, and the cathode electrode 108 is in direct contact with the upper surface of the Ga2O3 absorber layer 106.

[0071] The Ga2O3 absorber layer 106 covers the first insulating layer 105.

[0072] The projected area of ​​the Ga2O3 absorber layer 106 is 60% of the surface area of ​​the GaN transport layer 104.

[0073] The projected area of the recess in the GaN transport layer 104 is 20% of the surface area of the GaN transport layer 104.

[0074] The depth of the recess is 0.05 μm.

[0075] The projected area of the metal layer 107 is 80% of the upper surface area of the Ga2O3 absorption layer 106.

[0076] The substrate 101 is sapphire.

[0077] The thickness of the GaN buffer layer 102 is 1.8 μm.

[0078] The material of the AlGaN insertion layer 103 is undoped Al 0.2 Ga 0.8 N, and the thickness of the AlGaN insertion layer 103 is 0.01 μm.

[0079] The GaN transport layer 104 is undoped GaN, and the thickness of the GaN transport layer 104 is 0.2 μm.

[0080] The material of the first insulating layer 105 is SiO2, the thickness of the first insulating layer 105 is 0.05 μm, and the thickness of the first insulating layer 105 is less than or equal to the depth of the recess.

[0081] The material of the Ga2O3 absorption layer 106 is undoped Ga2O3, and the thickness of the Ga2O3 absorption layer 106 is 0.2 μm.

[0082] The material of the metal layer 107 is a stack of a metal Ni layer and a metal Au layer, and the thickness of the metal layer 107 is 110 nm. The pattern of the metal layer 107 is a rectangle.

[0083] The materials of the cathode electrode 108 and the anode electrode 109 are both Ni / Au.

[0084] The preparation method of the above-mentioned solar blind ultraviolet detector specifically comprises the following steps:

[0085] S1) epitaxially growing the buffer layer 102 on the surface of the substrate 101 in a MOCVD reaction furnace, at a growth temperature of 1050°C and an air pressure of 50 mbar, so as to filter dislocation defects and release stress caused by lattice mismatch; continuing to epitaxially grow the insertion layer 103 and the transport layer 104, at a growth temperature of 1050°C and an air pressure of 50 mbar;

[0086] S2) etching the transport layer 104 to obtain the recess through a photoetch and dry etching process;

[0087] S3) In the PECVD reaction furnace, epitaxially grow the first insulating layer, the growth temperature is 300℃, the gas pressure is 0.5mbar, then use the photolithography and wet etching process to make the first insulating layer 105 in the groove;

[0088] S4) In the ALD reaction furnace, epitaxially grow the absorbing layer 106, the growth temperature is 250℃;

[0089] S5) Use the photolithography and dry etching process to etch the absorbing layer 106 to expose the upper surface of the part of the transport layer 104, make the mesa;

[0090] S6) Use the photolithography and electron beam evaporation process to make the anode electrode 109 on the exposed surface of the transport layer 104, make the cathode electrode 108 and the patterned metal layer 107 on the upper surface of the absorbing layer 106.

[0091] Embodiment 2

[0092] As shown in FIG. 1, a kind of solar blind ultraviolet detector, and the difference of embodiment 1 is as follows: Figure 2

[0093] It further includes the second insulating layer 110, the second insulating layer 110 is arranged between Ga2O3 absorbing layer 106 and metal layer 107, and the second insulating layer 110 is arranged on the side of Ga2O3 absorbing layer 106 close to anode electrode 109.

[0094] The pattern of the second insulating layer 110 is rectangular.

[0095] The material of the second insulating layer is SiO2, the projection area of the second insulating layer 110 is 20% to 80% of the upper surface area of Ga2O3 absorbing layer 106, and the thickness of the second insulating layer 110 is 0.05 μm.

[0096] The thickness of the GaN buffer layer 102 is 1.8 μm.

[0097] The thickness of the GaN transport layer 104 is 6 μm.

[0098] The preparation method of the above-mentioned solar blind ultraviolet detector is the same as S1-S5 of the preparation method of embodiment 1, and the difference from embodiment 1 is that step S6 further includes step S7:

[0099] S6) In the ALD reaction furnace, deposit SiO2 insulating layer on the exposed transport layer 104 and absorbing layer 106, and make the second insulating layer 110 on the absorbing layer 106 by wet etching technology, wherein a part of the second insulating layer 110 covers the upper surface of the absorbing layer 106, and another part of the second insulating layer 110 completely covers the sidewall of the absorbing layer 106.

[0100] ​S7) Using photolithography and electron beam evaporation process, anode electrode 109 is made on the exposed surface of transport layer 104, cathode electrode 108 is made on the surface of absorbing layer 106 which is not covered by second insulation layer 110, and patterned metal layer 107 is made on the surface of second insulation layer.

[0101] Example 3

[0102] A solar blind ultraviolet detector, which is different from example 1 in that,

[0103] The projected area of Ga2O3 absorbing layer 106 is 20% of the surface area of GaN transport layer 104.

[0104] The projected area of the groove in GaN transport layer 104 is 5% of the surface area of GaN transport layer 104.

[0105] The depth of the groove is 0.001 μm, and the thickness of first insulation layer 105 is 0.001 μm.

[0106] The projected area of metal layer 107 is 20% of the surface area of Ga2O3 absorbing layer 106.

[0107] The projected area of second insulation layer 110 is 20% of the surface area of Ga2O3 absorbing layer 106, and the thickness of second insulation layer 110 is 0.001 μm.

[0108] The thickness of GaN buffer layer 102 is 1 μm, the thickness of AlGaN insertion layer 103 is 0.005 μm, the thickness of GaN transport layer 104 is 0.1 μm, the thickness of Ga2O3 absorbing layer 106 is 0.001 μm, and the thickness of metal layer 107 is 1 nm.

[0109] Example 4

[0110] A solar blind ultraviolet detector, which is different from example 1 in that,

[0111] The projected area of Ga2O3 absorbing layer 106 is 80% of the surface area of GaN transport layer 104.

[0112] The projected area of the groove in GaN transport layer 104 is 30% of the surface area of GaN transport layer 104.

[0113] The depth of the groove is 1 μm, and the thickness of first insulation layer 105 is 0.5 μm.

[0114] The projected area of metal layer 107 is 80% of the surface area of Ga2O3 absorbing layer 106.

[0115] The projected area of the second insulating layer 110 is 80% of the upper surface area of the Ga2O3 absorption layer 106, and the thickness of the second insulating layer 110 is 0.5 μm.

[0116] The thickness of the GaN buffer layer 102 is 3 μm, the thickness of the AlGaN insertion layer 103 is 0.5 μm, the thickness of the GaN transport layer 104 is 5 μm, the thickness of the Ga2O3 absorption layer 106 is 0.5 μm, and the thickness of the metal layer 107 is 20 nm.

[0117] Result detection

[0118] The relevant performance of the above-mentioned Example 1 solar blind ultraviolet detector was detected, and the results are shown in the following tables.

[0119] (1) The photo-generated hole concentration in the gallium oxide absorption layer: the test method is TCAD simulation software. The unit is cm -3 .

[0120] The specific detection results of Example 1 are shown in Tables 1 and Figure 3 .

[0121] Table 1

[0122]

[0123] (2) The photocurrent: in the range of 1-6 V, the test method is TCAD simulation. The unit is A / cm 2 .

[0124] The specific detection results of Example 1 are shown in Tables 2 and Figure 4 .

[0125] Table 2

[0126] Voltage (V) 1 2 3 4 5 6 Example 1 2.30*10 -3 ]]> 2.41*10 -3 ]]> 2.43*10 -3 ]]> 2.45*10 -3 ]]> 2.46*10 -3 ]]> 2.48*10 -3 ]]>

[0127] From the above results, it can be seen that the photocurrent of the solar blind ultraviolet detector of the present application is higher, and the photo-generated hole concentration in the Ga2O3 absorption layer of the solar blind ultraviolet detector of the present application is lower, which indicates that in the solar blind ultraviolet detector of the present application, the cathode electrode in direct contact with the Ga2O3 absorption layer can effectively collect photo-generated holes, so that photo-generated electrons are more easily transported downward.

[0128] The photocurrent and dark current of the solar blind ultraviolet detector of the present application are related to the materials and sizes of the GaN buffer layer, the AlGaN insertion layer, the GaN transport layer, the first insulating layer, the Ga2O3 absorption layer, the patterned metal layer and the second insulating layer (if any).

[0129] Obviously, the above embodiments of the present application are merely exemplary but not intended to limit the embodiments of the present application. Based on the above description, any other variations or changes can be made by those skilled in the art without departing from the spirit and principles of the present application. It is not necessary to list all the embodiments here. Any modifications, equivalent replacements, and improvements made within the spirit and principles of the present application shall fall within the scope of the claims of the present application.

Claims

1. A solar blind ultraviolet detector, characterized by, The device comprises a substrate (101), a GaN buffer layer (102), an AlGaN insertion layer (103), a GaN transport layer (104), a first insulating layer (105), a Ga2O3 absorption layer (106), a metal layer (107), a cathode electrode (108) and an anode electrode (109); The substrate (101), the GaN buffer layer (102), the AlGaN insertion layer (103) and the GaN transport layer (104) are arranged in order from bottom to top; The upper surface of the GaN transport layer (104) is provided with a groove, and the first insulating layer (105) is deposited in the groove; The upper surface of the GaN transport layer (104) is provided with the Ga2O3 absorption layer (106) and the anode electrode (109); The Ga2O3 absorption layer (106) covers the first insulating layer (105); The upper surface of the Ga2O3 absorption layer (106) is provided with the metal layer (107) and the cathode electrode (108), and the cathode electrode (108) is in direct contact with the upper surface of the Ga2O3 absorption layer (106).

2. The solar blind UV detector of claim 1, wherein Further comprising a second insulating layer (110), which is arranged between the Ga2O3 absorption layer (106) and the metal layer (107) and / or arranged on the side surface of the Ga2O3 absorption layer (106).

3. The solar blind UV detector of claim 1, wherein the solar blind UV detector is configured to detect a wavelength of 280 nm or less. The projection area of the Ga2O3 absorption layer (106) is 20% to 80% of the upper surface area of the GaN transport layer (104).

4. The solar blind UV detector of claim 1, wherein the solar blind UV detector is configured to detect a wavelength of 280 nm or less. The projection area of the groove in the GaN transport layer (104) is 5% to 30% of the surface area of the GaN transport layer (104).

5. The solar blind UV detector of claim 1, wherein the solar blind UV detector is configured to detect a wavelength of 280 nm or less. The depth of the groove is 0.001 μm to 1 μm.

6. The solar blind UV detector of claim 5, wherein the filter is a long pass filter. The thickness of the first insulating layer (105) is 0.001 μm to 0.5 μm, and the thickness of the first insulating layer (105) is less than or equal to the depth of the groove.

7. The solar blind UV detector of claim 1, wherein the solar blind UV detector is configured to detect a wavelength of 280 nm or less. The projection area of the metal layer (107) is 20% to 80% of the upper surface area of the Ga2O3 absorption layer (106).

8. The solar blind UV detector of claim 2, wherein, The patterns of the metal layer (107) and the second insulating layer (110) are strip-shaped, rectangular, circular, circular ring-shaped or matrix-distributed, and the second insulating layer (110) corresponds to the shape of the metal layer (107) one by one.

9. The solar blind UV detector of claim 8, wherein the filter is a long pass filter. The projection area of the second insulating layer (110) is 20% to 80% of the upper surface area of the Ga2O3 absorption layer (106), and the thickness of the second insulating layer (110) is 0.001 μm to 0.5 μm.

10. The solar blind UV detector according to any one of claims 1 to 9, wherein The thickness of the GaN buffer layer (102) is 1 μm to 3 μm, the thickness of the AlGaN insertion layer (103) is 0.005 μm to 0.5 μm, the thickness of the GaN transport layer (104) is 0.1 μm to 5 μm, the thickness of the Ga2O3 absorption layer (106) is 0.001 μm to 0.5 μm, and the thickness of the metal layer (107) is 1 nm to 20 nm.

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