Mask for manufacturing grid line electrode of crystalline silicon heterojunction battery

Abstract

The utility model discloses a mask plate for manufacturing a grid line electrode of a crystalline silicon heterojunction battery, which is characterized in that the middle part of a first mask plate is provided with a first sinking area, the periphery of the first sinking area is respectively provided with a first sinking step, the first sinking area is provided with a plurality of grid line slits which are arranged at intervals, and the grid line slits vertically penetrate through the first mask plate; the first mask plate is used for placing a battery piece in a magnetron sputtering process or an evaporation coating process and is matched with the coating process to carry out sputtering on the surface of the battery piece to obtain the grid line slits with corresponding shapes; according to the utility model, the first mask plate is made of a high-temperature-resistant and corrosion-resistant metal material or a carbon fiber material, the first mask plate is used for placing the battery piece, and the metalized grid line electrode of the HJT battery is prepared by using a magnetron sputtering process or an evaporation coating process, so that the production cost of the HJT battery is reduced, and the photoelectric conversion efficiency of the HJT battery is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the preparation tool technical field of the grid line electrode of silicon heterojunction cell, especially to a kind of mask plate for manufacturing the grid line electrode of crystalline silicon heterojunction cell. BACKGROUND

[0002] The Chinese utility model with patent publication number CN 204367550 U proposes a screen plate, a silicon wafer and a mask plate for solar cell preparation, and the mask plate is used in a silk screen printing process.

[0003] Currently, HJT cells use low-temperature processes to prepare grid line electrodes, use silk screen printing low-temperature silver paste, and solidify at 200°C to form silver paste grid line electrodes. The cost of silver paste is high, and the cost of silver paste for HJT cells accounts for more than 50% of non-silicon costs, which seriously restricts the further development of HJT cell technology.

[0004] In order to further reduce the production cost of heterojunction cells, HJT enterprises attempt to use silver-coated copper paste to replace silver paste, reducing the silver content from 90% to 30%. However, silver-coated copper paste has insufficient density, poor contact characteristics between particles, and a significantly increased resistivity compared to traditional silver paste, resulting in poor conductivity and a decrease in the photoelectric conversion efficiency of HJT cells.

[0005] In order to further reduce silver consumption and even completely eliminate silver, heterojunction cells use electroplated copper technology to replace silk screen printed silver paste. However, electroplated copper technology can improve the aspect ratio of the grid lines and improve the photoelectric conversion efficiency of heterojunction cells, but it still faces two major challenges: the electroplating equipment is not yet fully mature and is expensive; and the electroplating solution causes significant environmental pollution, and the cost of treating electroplating waste liquid is high. These two challenges restrict the further development of electroplated copper technology for preparing grid line electrodes. SUMMARY

[0006] To address the deficiencies in the prior art, the utility model aims to provide a mask plate for magnetron sputtering or evaporation plating to manufacture grid line electrodes for crystalline silicon heterojunction cells, reducing the production cost of HJT cells and improving the photoelectric conversion efficiency of HJT cells.

[0007] In order to achieve the above object, the utility model adopts the technical scheme: a mask plate for manufacturing the grid line electrode of the crystalline silicon heterojunction cell, its characterized in that: including the first mask plate of thickness 0.02-3mm, as the mask plate that forms the plurality of solar cell grid lines of width 5-25um, height 0.2um-40um in the surface step sputtering of TCO film of cell piece in sputter coating process, the middle part of first mask plate is provided with first sunken area, the periphery of first sunken area is provided with first sunken step for limiting and placing cell piece respectively, the step surface of first sunken step is lower than the top surface of first mask plate, the top surface of first sunken area is not higher than the step surface of first sunken step, first sunken area is provided with a plurality of interval arrangement's grid line slit, grid line slit penetrates first mask plate from top to bottom, the width of grid line slit is set to 5-25um, the interval of adjacent two grid line slits is set to 0.5mm-3mm.

[0008] Further technical scheme, the grid line slit is parallel to the length direction of the first mask plate, and each grid line slit is parallelly arranged.

[0009] Further technical scheme, the step surface of the first sunken step is set to 0.01-1mm relative to the sinking height of the plate surface of the first mask plate.

[0010] Further technical scheme, the thickness of the first mask plate is set to 2mm, and the first sunken area is provided with 34-206 grid line slits.

[0011] Further technical scheme, further include the second mask plate of thickness 0.02-3mm, as the mask plate that forms the plurality of solar cell main grid lines in the surface step sputtering of TCO film of cell piece in sputter coating process, the middle part of second mask plate is provided with second sunken area, the periphery of second sunken area is provided with second sunken step for limiting and placing cell piece respectively, the step surface of second sunken step is lower than the top surface of second mask plate, the top surface of second sunken area is not higher than the step surface of second sunken step, second sunken area is provided with a plurality of interval arrangement's main grid line groove, main grid line groove penetrates second mask plate from top to bottom, each main grid line groove is parallelly arranged, and the main grid line groove is parallel to the width direction of second mask plate, the width of main grid line groove is set to 0.5mm-3mm, and the interval of adjacent two main grid line grooves is set to 8-100mm.

[0012] Further technical scheme, the shape and outer dimension of the second mask plate are same with the first mask plate respectively, the shape and outer dimension of the second sunken step are same with the first sunken step respectively, and the outer dimension of the second sunken area is same with the first sunken area.

[0013] Further, the main grid line groove is provided with at least one welding spot grid, the welding spot grid penetrates the second mask from top to bottom, the width of the welding spot grid is greater than the width of the main grid line groove, and the welding spot grid overlaps the corresponding main grid line groove.

[0014] Further, the main grid line groove is provided with at least one welding spot grid, the welding spot grid penetrates the second mask from top to bottom, the width of the welding spot grid is greater than the width of the main grid line groove, and the welding spot grid overlaps the corresponding main grid line groove.

[0015] Further, the main grid line groove is provided with at least one welding spot grid, the welding spot grid penetrates the second mask from top to bottom, the width of the welding spot grid is greater than the width of the main grid line groove, and the welding spot grid overlaps the corresponding main grid line groove.

[0016] The utility model has the advantages that compared with prior art: the utility model discloses a first mask plate for placing a battery piece in a magnetron sputtering process or an evaporation coating process and cooperating with a coating process to sputter a corresponding shape of grid line fine slit on the surface of the battery piece, the first mask plate is made of high-temperature-resistant and corrosion-resistant metal material or carbon fiber material, the first mask plate is used to place the battery piece, a metallized grid line electrode of HJT battery is prepared by using the magnetron sputtering process or the evaporation coating process, the production cost of the HJT battery is reduced, and the photoelectric conversion efficiency of the HJT battery is improved. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 The utility model discloses a first mask plate structure schematic drawing.

[0018] Figure 2 The utility model discloses a first mask plate sectional view.

[0019] Figure 3 The utility model discloses a first mask plate is used to sputter to form a plurality of solar cell grid lines on the surface of the TCO film of the battery piece.

[0020] Figure 4 The utility model discloses a first mask plate is used to sputter to form a plurality of solar cell grid lines on the surface of the TCO film of the battery piece.

[0021] Figure 5 The utility model discloses a second mask plate structure schematic drawing.

[0022] Figure 6 The utility model discloses a second mask plate structure schematic drawing of being provided with 2 welding spot grids.

[0023] Figure 7 The utility model discloses a first mask plate structure schematic drawing of forming a plurality of solar cell grid lines and 2 solar cell main grid lines on the surface of the TCO film of the battery piece step by step.

[0024] Figure 8is a schematic diagram of forming a plurality of solar cell grid lines and 2 solar cell main grid lines with solder point grid by step sputtering on the surface of the TCO film of the battery sheet through the first mask and the second mask.

[0025] The figure is marked:

[0026] 1. First mask

[0027] 2. First sunken area

[0028] 3. First sunken step

[0029] 4. Grid line slit

[0030] 5. Second mask

[0031] 6. Second sunken area

[0032] 7. Second sunken step

[0033] 8. Main grid line groove

[0034] 9. Solder point grid

[0035] 10. Battery sheet

[0036] 11. Solar cell grid line DETAILED DESCRIPTION

[0037] A mask for manufacturing the grid line electrode of the crystalline silicon heterojunction cell, comprising a first mask 1 with a thickness of 0.02-3mm, Figure 1 and 2 As shown, as a mask for forming a plurality of solar cell grid lines 11 with a width of 5-25um and a height of 0.2um-40um on the surface of the TCO film of the battery sheet 10 by step sputtering in the sputtering plating process, the middle part of the first mask 1 is provided with a first sunken area 2, and the first sunken step 3 for limiting and placing the battery sheet 10 is arranged around the first sunken area 2, the step surface of the first sunken step 3 is lower than the top surface of the first mask 1, the top surface of the first sunken area 2 is not higher than the step surface of the first sunken step 3, the first sunken area 2 is provided with a plurality of spaced grid line slits 4, the grid line slits 4 pass through the first mask 1 from top to bottom, the grid line slits 4 are parallel to the length direction of the first mask 1, and each grid line slit 4 is arranged parallel to each other, the width of the grid line slit 4 is set to 5-25um, and the distance between the adjacent two grid line slits 4 is set to 0.5mm-3mm. The first sunken area 2 is provided with 34-206 grid line slits 4, and the sinking height of the step surface of the first sunken step 3 relative to the plate surface of the first mask 1 is set to 0.01-1mm.

[0038] In a feasible implementation manner, Figure 1 and 2As shown, the mask plate is rectangular in shape, the length of the first mask plate 1 is set to 240 mm, the width is set to 135 mm, the thickness of the first mask plate 1 is set to 2 mm, the step surface of the first sinking step 3 is set to 0.5 mm lower than the top surface of the first mask plate 1, the length and width dimensions of the battery piece 10 are 210 mm long and 105 mm wide, the length and width dimensions of the first sinking area 2 are greater than the length and width dimensions of the battery piece 10 to be placed, the length and width dimensions of the first sinking area 2 are 210.2 mm long and 105.2 mm wide, the grid line height is adjustable according to the film thickness, and the grid line height is specifically set to 0.2 um-40 um.

[0039] A mask plate for manufacturing a grid line electrode of a crystalline silicon heterojunction cell further comprises a second mask plate 5 with a thickness of 0.02-3 mm, which is used as a mask plate for step-by-step sputtering to form a plurality of solar cell main grid lines 12 on the surface of the TCO film of the battery piece 10 in a sputtering film process, Figure 5 As shown, the second mask plate 5 is provided with a second sinking area 6 in the middle, and a second sinking step 7 for limiting and placing the battery piece 10 is arranged around the second sinking area 6, the step surface of the second sinking step 7 is lower than the top surface of the second mask plate 5, the top surface of the second sinking area 6 is not higher than the step surface of the second sinking step 7, the second sinking area 6 is provided with a plurality of main grid line grooves 8 arranged at intervals, the main grid line grooves 8 pass through the second mask plate 5 from top to bottom, each main grid line groove 8 is arranged parallel to each other, and the main grid line groove 8 is parallel to the width direction of the second mask plate 5, the width of the main grid line groove 8 is set to 0.5 mm-3 mm, and the distance between the adjacent two main grid line grooves 8 is set to 8-100 mm.

[0040] In a feasible implementation manner, the shape and outer dimensions of the second mask plate 5 are the same as those of the first mask plate 1, the shape and outer dimensions of the second sinking step 7 are the same as those of the first sinking step 3, the outer dimensions of the second sinking area 6 are the same as those of the first sinking area 2, and two main grid line grooves 8 are arranged in the sinking area, Figure 5 As shown, the distance between the adjacent two main grid line grooves 8 is set to 100 mm, and the width of the main grid line groove 8 is set to 3 mm, and the main grid line groove 8 with a larger width is conducive to converging the current and leading it out to the external circuit.

[0041] Further, 2-5 solder point grids 9 are arranged along the length direction of the main grid line groove 8, the solder point grid 9 passes through the second mask plate 5 from top to bottom, the width of the solder point grid 9 is greater than the width of the main grid line groove 8, and in a feasible implementation manner, 2 solder point grids 9 are arranged at intervals in each main grid line groove 8, Figure 6The length of the solder point grid 9 is set to 1-4 cm, and the width is set to 1-3 cm in the small square area shown, and the solder point grid 9 overlaps the corresponding main grid line groove 8. The solder point grid 9 is beneficial to improve the adhesion between the solar cell grid line 11 and the cell sheet 10, relieve the stress of the solar cell grid line 11, so that the solar cell grid line 11 is not easy to fall off, and also can reduce the resistance of the solar cell grid line 11, and is more beneficial to the transmission of internal electrons.

[0042] The utility model discloses a kind of mask plate for magnetron sputtering coating or evaporation coating preparation heterojunction cell grid line electrode, cell sheet 10 is placed on first mask plate 1, then first mask plate 1 is placed into coating machine, sputtering coating or evaporation coating is carried out, solar cell grid line 11 is prepared on the surface of cell sheet 10, then cell sheet 10 is placed on second mask plate 5, again into coating machine, sputtering coating or evaporation coating is carried out, process is simple, low in cost, the width of solar cell grid line 11 prepared by changing the size of the grid line slit 4 of first mask plate 1 is adjusted, the height of solar cell grid line 11 is adjusted by adjusting the film thickness of coating, effectively reduce the production cost of heterojunction cell grid line, improve the photoelectric conversion efficiency of heterojunction cell.

[0043] The first mask plate 1 and the second mask plate 5 of the utility model are prepared from high-temperature-resistant and corrosion-resistant metal materials or carbon fiber materials, the first mask plate 1 and the second mask plate 5 are used to place the cell sheet 10, and the magnetron sputtering process or the evaporation coating process is used to prepare the metallized grid line electrode of the HJT cell, which includes the solar cell grid line 11 and the solar cell main grid line 12, and the metallized grid line electrode formed by the coating process has higher adhesion, lower resistance and better conductivity, which is more conducive to the transmission of internal electrons, improves the photoelectric conversion efficiency of the HJT cell, and is more likely to prepare the metallized grid line electrode with higher dimensional accuracy and lower production cost.

Claims

1. A photomask for fabricating grid electrodes in a crystalline silicon heterojunction solar cell, characterized in that: The first mask (1) with a thickness of 0.02-3mm is used as a mask for step-by-step sputtering of multiple solar cell grid lines (11) with a width of 5-25um and a height of 0.2um-40um on the surface of the TCO film of the solar cell (10) in the sputtering coating process. A first sinking area (2) is provided in the middle of the first mask (1). A first sinking step (3) for limiting and placing the solar cell (10) is provided around the first sinking area (2). The step surface of the first sinking step (3) is lower than the top surface of the first mask (1). The top surface of the first sinking area (2) is not higher than the step surface of the first sinking step (3). A number of grid line slits (4) are provided in the first sinking area (2) at intervals. The grid line slits (4) penetrate the first mask (1) from top to bottom. The width of the grid line slits (4) is set to 5-25um. The spacing between two adjacent grid line slits (4) is set to 0.5mm-3mm.

2. The mask for manufacturing grid electrodes of a crystalline silicon heterojunction solar cell according to claim 1, characterized in that: The grid slits (4) are parallel to the length direction of the first mask (1), and each grid slit (4) is arranged parallel to the others.

3. The mask for manufacturing grid electrodes of a crystalline silicon heterojunction solar cell according to claim 2, characterized in that: The height of the step surface of the first sinking step (3) relative to the plate surface of the first mask plate (1) is set to 0.01-1mm.

4. The mask for manufacturing grid electrodes of a crystalline silicon heterojunction solar cell according to claim 3, characterized in that: The thickness of the first mask (1) is set to 2 mm, and 34-206 grid line slits (4) are provided in the first recessed area (2).

5. A mask for manufacturing grid electrodes of a crystalline silicon heterojunction solar cell according to any one of claims 1 to 4, characterized in that: It also includes a second mask (5) with a thickness of 0.02-3 mm, which serves as a mask for stepwise sputtering to form multiple solar cell main grid lines (12) on the surface of the TCO film of the solar cell (10) in the sputtering coating process. A second recessed area (6) is provided in the middle of the second mask (5), and second recessed steps (7) for limiting and placing the solar cell (10) are provided around the second recessed area (6). The step surface of the second recessed step (7) is lower than that of the second mask (5). The top surface of the second sinking area (6) is not higher than the step surface of the second sinking step (7). The second sinking area (6) is provided with multiple spaced main grid grooves (8). The main grid grooves (8) penetrate the second mask plate (5) vertically. Each main grid groove (8) is arranged parallel to each other and parallel to the width direction of the second mask plate (5). The width of the main grid grooves (8) is set to 0.5mm-3mm, and the distance between two adjacent main grid grooves (8) is set to 8-100mm.

6. A mask for manufacturing grid electrodes of a crystalline silicon heterojunction solar cell according to claim 5, characterized in that: The shape and outer dimensions of the second mask (5) are the same as those of the first mask (1), the shape and outer dimensions of the second sinking step (7) are the same as those of the first sinking step (3), and the outer dimensions of the second sinking area (6) are the same as those of the first sinking area (2).

7. A mask for manufacturing grid electrodes of a crystalline silicon heterojunction solar cell according to claim 6, characterized in that: The main grid groove (8) is provided with at least one solder grid (9), the solder grid (9) extends vertically through the second mask plate (5), the width of the solder grid (9) is greater than the width of the main grid groove (8), and the solder grid (9) overlaps the corresponding main grid groove (8).

8. A photomask for manufacturing grid electrodes of a crystalline silicon heterojunction solar cell according to claim 7, characterized in that: Two to five welding point grids (9) are provided along the length of the main grid groove (8).

9. A mask for manufacturing grid electrodes of a crystalline silicon heterojunction solar cell according to claim 7, characterized in that: The length of the weld grid (9) is set to 1-4cm and the width is set to 1-3cm.

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