15GHz-30GHz high-isolation microwave feed bias network

Abstract

The utility model provides a 15GHz-30GHz high-isolation microwave feed bias network. The 15GHz-30GHz high-isolation microwave feed bias network comprises a blocking capacitor C1, an inductor L1, an inductor L2, an inductor L3, a matching branch TL1, a matching branch TL2, a matching branch TL3, a matching branch TL4, a matching branch TL5, a matching branch TL6, a matching branch TL7, a T-shaped microstrip line branch Tee1, a T-shaped microstrip line branch Tee2, a T-shaped microstrip line branch Tee3 and a T-shaped microstrip line branch Tee4. By adjusting the size of the inductor and the matching branch knot, a feed network of 15-30 GHz can be realized, and the feed network has the characteristics of low loss and high isolation.

Description

Technical Field

[0001] This application relates to the field of microwave circuit technology, to a technology for providing bias power to microwave amplifiers or switches, and particularly to a 15GHz~30GHz high-isolation microwave feed bias network. Background Technology

[0002] Currently, the power supply methods for some microwave amplifiers or switches on the market mainly rely on LC filters formed by a single inductor and capacitor, or butterfly feed networks. However, the isolation between the feed line and the microwave / RF circuit is not high, and the operating frequency is often limited by the inductor's self-resonant frequency and the operating frequency of the butterfly feed network. Therefore, researching a broadband and highly isolated feed network is of great significance. Utility Model Content

[0003] To address the shortcomings of the prior art, this application provides a 15GHz~30GHz high-isolation microwave feed bias network. By adjusting the size of the inductor and matching stub, a 15GHz~30GHz feed network can be realized, and the feed network has the characteristics of low loss and high isolation.

[0004] To achieve the above objectives, the present invention employs the following technology:

[0005] A 15GHz~30GHz high-isolation microwave feed bias network includes a DC blocking capacitor C1, inductors L1, L2, L3, matching stubs TL1, TL2, TL3, TL4, TL5, TL6, TL7, and T-type microstrip line stubs Tee1, Tee2, Tee3, and Tee4.

[0006] Among them, one end of the T-type microstrip line stub Tee1 is connected to the radio frequency signal input terminal Term1 through the radio frequency signal transmission line TL33, the opposite end is connected to one end of the DC blocking capacitor C1 through the radio frequency signal transmission line TL32, and the side end is connected to one end of the inductor L1.

[0007] The other end of the DC blocking capacitor C1 is connected to the RF signal output terminal Term2 via the RF signal transmission line TL34.

[0008] One end of the T-type microstrip line stub Tee4 is connected to the other end of inductor L1 through matching stub TL1, and the opposite end is connected to one end of inductor L2 through matching stub TL3. The side end is connected to matching stub TL2.

[0009] One end of the T-shaped microstrip line stub Tee3 is connected to the other end of the inductor L2, and the opposite end is connected to one end of the inductor L3 through the matching stub TL5. The side end is connected to the matching stub TL4.

[0010] One end of the T-shaped microstrip stub Tee2 is connected to the other end of the inductor L3, and the opposite end is connected to the power input terminal Term3 through the matching stub TL7. The side end is connected to the matching stub TL6.

[0011] The beneficial effects of this utility model are as follows:

[0012] By adjusting the size of the inductors and matching stubs, a power supply network with low loss and high isolation can be achieved from 15GHz to 30GHz. By adjusting the inductance values ​​of inductors L1, L2, and L3, and the length and width of matching stubs TL1, TL2, TL3, TL4, TL5, TL6, and TL7, the isolation between Term1 and Term3 ports (signal leakage from the transmission line to the Term3 port ≤70dB) and the insertion loss between Term1 and Term2 (insertion loss ≤0.4dB in the 15GHz to 30GHz band) can be adjusted. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the power supply bias network according to an embodiment of this application.

[0014] Figure 2 This is a simulation curve of the isolation of the power supply bias network in an embodiment of this application.

[0015] Figure 3 This is a simulation curve of the insertion loss of the feed bias network according to an embodiment of this application. Detailed Implementation

[0016] To make the objectives, technical solutions and advantages of the present utility model clearer, the implementation methods of the present utility model will be described in detail below with reference to the accompanying drawings. However, the embodiments described in the present utility model are only some embodiments of the present utility model, and not all embodiments.

[0017] This application provides a 15GHz~30GHz high-isolation microwave feed bias network, such as... Figure 1 As shown, it includes DC blocking capacitor C1, inductor L1, inductor L2, inductor L3, matching stub TL1, matching stub TL2, matching stub TL3, matching stub TL4, matching stub TL5, matching stub TL6, matching stub TL7, T-type microstrip line stub Tee1, T-type microstrip line stub Tee2, T-type microstrip line stub Tee3, and T-type microstrip line stub Tee4.

[0018] Among them, one end of the T-shaped microstrip line stub Tee1 is connected to the radio frequency signal input terminal Term1 through the radio frequency signal transmission line TL33, and the opposite end is connected to one end of the DC blocking capacitor C1 through the radio frequency signal transmission line TL32, and the side end is connected to one end of the inductor L1; the other end of the DC blocking capacitor C1 is connected to the radio frequency signal output terminal Term2 through the radio frequency signal transmission line TL34.

[0019] One end of the T-type microstrip stub Tee4 is connected to the other end of inductor L1 via matching stub TL1, and the opposite end is connected to one end of inductor L2 via matching stub TL3, with the side end connected to matching stub TL2; one end of the T-type microstrip stub Tee3 is connected to the other end of inductor L2, and the opposite end is connected to one end of inductor L3 via matching stub TL5, with the side end connected to matching stub TL4; one end of the T-type microstrip stub Tee2 is connected to the other end of inductor L3, and the opposite end is connected to the power input terminal Term3 via matching stub TL7, with the side end connected to matching stub TL6.

[0020] During implementation:

[0021] 1. The value of inductor L1 is obtained through simulation calculations based on the required frequency range;

[0022] 2. The values ​​of inductors L2 and L3 are obtained by constructing a low-pass filter.

[0023] 3. Based on the obtained values ​​of inductance L1, inductance L2, and inductance L3, select the required inductor model for simulation; for example, you can choose the Murata series.

[0024] 4. Based on the selected inductors L1, L2, and L3 packages, construct the actual pad size and the length and width of matching branches TL1~TL7;

[0025] 5. Adjust the length and width of TL1~TL7 to complete the bias network with high isolation and low loss. Determine the values ​​of Tee1~Tee4 based on the values ​​of TL1~TL7.

[0026] Parametric simulations yielded the following implementation: A high-frequency ceramic substrate with a thickness of 10 mil and a dielectric constant ER=9.8 was selected, with a top copper thickness of 4 μm. The DC blocking capacitor C1 was selected from the Murata series. Different lengths and widths of the matching stubs TL1~TL7 were set, as were different connection widths at each end of the T-shaped microstrip line stub Tee1.

[0027] like Figure 2 The figure shows the isolation simulation curve for this example.

[0028] like Figure 3 The figure shown is the insertion loss simulation curve for this example.

[0029] The above description is only a preferred embodiment of this application and is not intended to limit this application. Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application.

Claims

1. A high-isolation microwave feed bias network for 15GHz~30GHz, characterized in that, This includes DC blocking capacitor C1, inductor L1, inductor L2, inductor L3, matching stub TL1, matching stub TL2, matching stub TL3, matching stub TL4, matching stub TL5, matching stub TL6, matching stub TL7, T-type microstrip line stub Tee1, T-type microstrip line stub Tee2, T-type microstrip line stub Tee3, and T-type microstrip line stub Tee4; One end of the T-type microstrip line stub Tee1 is connected to the RF signal input terminal Term1 via RF signal transmission line TL33, and the opposite end is connected to one end of DC blocking capacitor C1 via RF signal transmission line TL32. The side end is connected to one end of inductor L1. The other end of the DC blocking capacitor C1 is connected to the RF signal output terminal Term2 via the RF signal transmission line TL34. One end of the T-type microstrip line stub Tee4 is connected to the other end of inductor L1 through matching stub TL1, and the opposite end is connected to one end of inductor L2 through matching stub TL3. The side end is connected to matching stub TL2. One end of the T-shaped microstrip line stub Tee3 is connected to the other end of the inductor L2, and the opposite end is connected to one end of the inductor L3 through the matching stub TL5. The side end is connected to the matching stub TL4. One end of the T-shaped microstrip stub Tee2 is connected to the other end of the inductor L3, and the opposite end is connected to the power input terminal Term3 through the matching stub TL7. The side end is connected to the matching stub TL6.

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