Gas supply assembly and semiconductor etching equipment
By using a double-layer spray plate structure and a side air inlet design, the problem of uneven plasma distribution is solved, enabling uniform etching and gas mixing control in the etching equipment, and reducing equipment corrosion.
Patent Information
- Application Number
- CN202422992167.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-12-12
- Estimated Expiration
- 2034-12-04
AI Technical Summary
In existing semiconductor etching equipment, the plasma distribution on the substrate surface is uneven, which affects the uniformity of the etching rate.
The system employs a double-layer spray disk structure, consisting of a first spray disk on the upper layer and a second spray disk on the lower layer. By setting air holes of different densities and apertures in the transition annular region and the edge annular region, and by adding a second air inlet on the side, the uniformity of the plasma is adjusted.
Uniform distribution of plasma on the substrate surface was achieved, improving the uniformity of etching. Different gases could be introduced to adjust the etching effect and reduce the corrosion of the equipment by the plasma.
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Figure CN223665416U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the technical field of semiconductor equipment, especially relates to a gas supply assembly and semiconductor etching equipment. BACKGROUND
[0002] In integrated circuit manufacturing processes, multiple etching operations are performed on substrates using etching equipment. For example, in a plasma etching process, plasma generated by a plasma source reaches a substrate surface through a gas distribution plate (showerhead), thereby forming a plasma over a mask surface of the substrate. By adjusting the potential of the substrate, charged particles in the plasma can be directed to impinge perpendicularly on the substrate, causing material in unmasked areas of the substrate to be removed. To make the etching rate of the substrate surface uniform, the uniformity of the plasma distribution on the substrate surface needs to be improved.
[0003] In the prior art, the etching equipment includes an upper cavity cover and a chamber, a central position of the upper cavity cover is provided with a gas inlet of plasma, a gas distribution plate is arranged directly below the gas inlet, and the plasma flows to a processing area defined between the gas distribution plate and a substrate support of the processing chamber through the gas distribution plate. The uniformity of the plasma distribution on the substrate surface can be improved by designing the gas distribution plate. SUMMARY
[0004] The utility model discloses a gas supply assembly and a semiconductor etching equipment using the same.
[0005] To achieve the above object, the utility model discloses the following technical scheme: a gas supply assembly, comprising: a first spray tray, the first spray tray includes a central circular area, a marginal annular area and a transition annular area between the central circular area and the marginal annular area;The first spray tray is provided with a first gas hole, and the first gas hole is arranged along the thickness direction of the first spray tray;The first spray tray is only provided with the first gas hole in the transition annular area and / or the marginal annular area;
[0006] A second spray tray is provided with a second gas hole, and the second gas hole is arranged along the thickness direction of the second spray tray, and the first spray tray and the second spray tray are arranged in a stacked manner;
[0007] A first gas inlet is arranged directly above the first spray tray;
[0008] A second gas inlet is arranged between the first spray tray and the second spray tray, and the second gas inlet is arranged at the edge of the first spray tray and the second spray tray.
[0009] Preferably, the first spray disc has first air holes in the transition annular region and the edge annular region, the first air holes in the transition annular region have a higher density than the first air holes in the edge annular region.
[0010] Preferably, the first spray disc has first air holes in the transition annular region and the edge annular region, the first air holes in the transition annular region have a higher density than the first air holes in the edge annular region.
[0011] Preferably, the first air holes in the transition annular region and / or the edge annular region of the first spray disc are arranged in a radial direction.
[0012] Preferably, the first air holes in the transition annular region and / or the edge annular region of the first spray disc are arranged in a circumferential direction.
[0013] Preferably, the first air holes in the transition annular region and / or the edge annular region of the first spray disc are arranged in a circumferential direction.
[0014] Preferably, the first spray disc has a first surface opposite to the second spray disc, the second spray disc has a second surface opposite to the first spray disc; an annular connecting side wall is arranged between the first surface and the second surface, the annular connecting side wall is located at the edge of the first spray disc and the second spray disc; the upper surface of the annular connecting side wall is connected with the first surface, and the lower surface of the annular connecting side wall is connected with the second surface; the annular connecting side wall is provided with third air holes arranged in the thickness direction of the annular connecting side wall.
[0015] Preferably, the edge of the second spray disc is provided with an annular mounting protrusion higher than the second surface of the second spray disc; the first spray disc is integrally formed with the annular connecting side wall, the edge of the first spray disc is provided with an annular extension part, the annular extension part is connected with the side wall of the annular mounting protrusion; the lower surface of the annular extension part of the first spray disc, the second surface of the second spray disc, the annular connecting side wall and the side wall of the annular mounting protrusion form a first annular air uniformization area, the second air inlet is located in the annular mounting protrusion of the second spray disc, and the second air inlet is in communication with the first annular air uniformization area.
[0016] Preferably, the third air holes formed in the annular connecting side wall have a high-density area and a low-density area, the low-density area is arranged near the second air inlet area, and the high-density area is arranged away from the second air inlet area.
[0017] A semiconductor etching device, comprising an upper cavity cover, a first gas inlet is arranged at the center of the upper cavity cover, a gas supply assembly is fixed to the upper cavity cover and located directly below the first gas inlet; a chamber, the upper cavity cover is located above the chamber, a support base is arranged inside the chamber, the center of the gas supply assembly is aligned with the center of the support base.
[0018] Compared with the prior art, the semiconductor etching device has the following advantages:
[0019] 1. The utility model discloses a first spray tray in upper layer and a second spray tray in lower layer, the first spray tray forms a primary uniform gas space with the upper cavity cover, a secondary uniform gas space is formed between the first spray tray and the second spray tray, and uniform distribution of substrate surface plasma is realized through the design of the two layers of gas spray trays.
[0020] 2. The first gas hole density and aperture of the transition annular area and / or the edge annular area of the first spray tray are different, the density and aperture of the first gas hole are determined through an etching rate map, and the uniformity of substrate surface plasma distribution can be improved through the arrangement of the first gas holes with different densities and apertures.
[0021] 3. The utility model discloses a second gas inlet arranged on the side of the gas supply assembly, another process gas or dilution gas can be introduced into the second gas inlet, thereby adjusting the uniformity of substrate surface plasma and improving the uniformity of etching. In addition, when the etching gas is two or more process gases, in order to avoid the gas from mixing too early, introducing the two gases into the first gas inlet and the second gas inlet respectively can achieve the desired mixing effect.
[0022] 4. The utility model discloses a first annular gas distribution area arranged between the second gas inlet and the third gas hole, and the third gas hole formed in the annular connecting side wall is divided into a high-density area and a low-density area, and uniform gas inlet of the annular connecting side wall is realized through the arrangement of the third gas holes with different densities. BRIEF DESCRIPTION OF DRAWINGS
[0023] In order to more clearly illustrate the technical scheme of the utility model, the following will briefly introduce the drawings needed to be used in the description, and obviously, the drawings in the following description are an embodiment of the utility model, and those skilled in the art can obtain other drawings according to these drawings without creating creative labor:
[0024] Figure 1 The utility model provides a semiconductor etching device structure schematic view for an embodiment of the utility model;
[0025] Figure 2A The utility model provides a first spray tray's plan for an embodiment of the utility model.
[0026] Figure 2B A plan view of the first spraying disc according to another embodiment of the present application is shown.
[0027] Figure 2C A plan view of the first spraying disc according to another embodiment of the present application is shown.
[0028] Figure 3 A side view of the gas supply assembly according to another embodiment of the present application is shown.
[0029] Figure 4 A structure diagram of the gas supply assembly according to the present application along the A-A' direction is shown. DETAILED DESCRIPTION
[0030] The scheme provided by the present application will be further described in detail below in combination with the drawings and specific embodiments. The advantages and features of the present application will be more apparent according to the following description. It should be noted that the drawings are greatly simplified and all use non-precise proportions, only to facilitate, clear and assist in the purpose of explaining the embodiments of the present application. In order to make the purpose, features and advantages of the present application more apparent and easy to understand, please refer to the drawings. It should be noted that the structure, proportion, size, etc. shown in the drawings of the present application are only used to cooperate with the content disclosed in the specification, so that those skilled in the art can understand and read, and are not used to limit the conditions of the implementation of the present application, so they do not have the technical essence, any modification of the structure, change of the proportion relationship or adjustment of the size, as long as it does not affect the effect and purpose of the present application, it should still fall within the scope of the technical content disclosed by the present application.
[0031] The present application provides a gas supply assembly, which can be used in a semiconductor etching device. Figure 1 A semiconductor etching device according to an embodiment of the present application is shown.
[0032] As Figure 1As shown, the semiconductor etching apparatus includes an upper chamber cover, an electrode assembly, a gas supply assembly, a chamber and an exhaust assembly (not shown). The semiconductor etching apparatus can use an upper electrode RF coil to excite plasma, or a remote plasma, without limitation. The remote plasma device 10 is used to excite the process gas into plasma. The gas supply assembly 12 includes a first shower plate 121 and a second shower plate 122, which are stacked one above the other, and an annular connecting side wall 123 is provided between the first shower plate and the second shower plate. The gas supply assembly is fixed below the upper chamber cover 14, and a first gas inlet 141 is provided at the central position of the upper chamber cover. The center line Z of the gas supply assembly coincides with the center line of the first gas inlet. The gas supply assembly is also provided with a second gas inlet 142, which is located between the first shower plate and the second shower plate and at the edge of the first shower plate and the second shower plate. The first shower plate is provided with a plurality of first gas holes, and the second shower plate is provided with a plurality of second gas holes.
[0033] The chamber includes a support pedestal 16 and a liner 17. The support pedestal is arranged in the chamber and is used to place a substrate W to be processed. The gas supply assembly is located directly above the support pedestal, and the center line of the gas supply assembly coincides with the center line of the support pedestal. The liner 17 is arranged on the inner surface of the side wall of the chamber and surrounds the support pedestal 16, and is used to uniformly distribute the process gas on the surface of the substrate. The process gas after processing is discharged from the chamber. The support pedestal also includes a plurality of lift pins 161. The substrate is supported by the lift pins, so that the substrate is separated from the support pedestal, so that a robot can take the substrate. The bottom of the support pedestal is provided with a lifting device, so that the support pedestal can move up and down. The chamber side wall 18 is provided with an exhaust port, which is connected with an exhaust assembly for discharging the process gas after processing from the chamber. The exhaust assembly includes a pump. The chamber side wall is also provided with a gas inlet pipe 19 for providing a second process gas to the second gas inlet of the gas supply assembly. The second process gas inlet pipe arranged on the chamber side wall can effectively avoid interference during the opening process.
[0034] During operation of a semiconductor etching apparatus, a near vacuum is created and maintained in a chamber by a pump assembly. In this state, a process gas and plasma are uniformly introduced into the chamber by a gas supply assembly. For example, during semiconductor processing, substrates are often fabricated from silicon-based materials, and a layer of dense SiO2 naturally forms on the surface of the silicon substrate when exposed to air. Some processes require the removal of the SiO2 layer from the surface of the substrate prior to processing. Currently, plasma etching is often used to remove the SiO2 layer from the surface of the substrate. For example, HF and NH3 are used to generate a plasma that etches the SiO2. During the etching process, HF, NH3 and SiO2 react to form (NH4)2SiF6, which removes the SiO2. The plasma can be generated by a remote plasma source (RPS), which is a device that excites a process gas to generate a plasma. The RPS provides activated gas and radicals to a process chamber. The plasma is generated in the RPS chamber, and the activated gas and radicals are introduced into the process chamber through a first gas inlet.
[0035] The utility model provides a kind of gas supply assembly, comprising: first shower tray 121, the first shower tray includes center circular area 21, edge annular area 23 and the transition annular area 22 between center circular area and edge annular area;The first shower tray is equipped with first gas hole 25, and the first gas hole is arranged along the thickness direction of first shower tray;The first shower tray is only equipped with first gas hole 25 in transition annular area and / or edge annular area;
[0036] Second shower tray 122, the second shower tray is equipped with second gas hole, and the second gas hole is arranged along the thickness direction of second shower tray, and the first shower tray and second shower tray are arranged in stack up and down;
[0037] First gas inlet, the first gas inlet 141 is located directly above the first shower tray 121;
[0038] Second gas inlet, the second gas inlet 142 is located between the first shower tray and the second shower tray, and the second gas inlet is located at the edge of the first shower tray and the second shower tray.
[0039] As shown in Figures 2A to 2C The first shower tray 121 and the second shower tray 122 are generally circular discs or plates. The first shower tray and the second shower tray can be made of transparent fused quartz material or opaque quartz glass material. The gas supply assembly can also be made of any suitable material and coated with transparent quartz material. The any material can be aluminum, aluminum alloy, steel, stainless steel, aluminum oxide or other metals and alloys.
[0040] AsFigure 3 As shown, the first shower tray 121 has a first surface 321 opposite to the second shower tray, and the first shower tray is provided with a third surface 322 opposite to the first surface. The second shower tray has a second surface 323 opposite to the first shower tray, and the second shower tray is provided with a fourth surface 324 opposite to the second surface.
[0041] The gas supply assembly provided by the utility model includes a first shower tray 121 located at the upper layer and a second shower tray 122 located at the lower layer, the third surface 322 of the first shower tray 121 opposite to the upper cavity cover and the lower surface of the upper cavity cover form a primary uniform gas space, and the first surface of the first shower tray 121 and the second surface 323 of the second shower tray form a secondary uniform gas space. The first process gas or plasma enters the primary uniform gas space through the first gas inlet 141, and the primary uniform gas space can realize the preliminary mixing of the first process gas or plasma due to the different gas concentrations close to and far from the first gas inlet 141. The second gas inlet 142 located at the side and arranged between the first shower tray 121 and the second shower tray 122 can be used to introduce the second process gas or dilution gas, and the secondary uniform gas space can realize the further uniform distribution of the process gas by controlling the flow and type of the second process gas or dilution gas, thereby improving the uniformity of the plasma on the substrate surface. In addition, since the plasma has strong etching ability, the plasma will not only react with the substrate, but also corrode the side wall of the chamber of the semiconductor etching equipment and the top wall of the upper cavity cover 14, for example, the upper cavity cover is made of aluminum. By inputting different process gases or plasmas into the chamber, the corrosion of the plasma on the lower surface of the upper cavity cover can be reduced.
[0042] In some embodiments, the transition annular area 22 and the edge annular area 23 of the first shower tray are provided with first gas holes 25, and the density of the first gas holes located in the transition annular area 22 is greater than the density of the first gas holes located in the edge annular area 23.
[0043] As shown in Figure 2A and Figure 3 The central circular area 21 of the first shower tray 121 is not provided with first gas holes 25, and if the first gas holes 25 are arranged in the central circular area 21, the gas concentration of the first process gas in the central circular area of the first surface 321 of the first shower tray 121 will be greater than the gas concentration of the surrounding area of the first surface of the first shower tray when the first process gas passes through the first shower tray 121, and if the first gas holes 25 in the central circular area are not regulated, the distribution of the process gas on the substrate surface will be uneven even if the secondary uniform gas is realized by the second shower tray.
[0044] The first gas hole density and aperture in the transition annular region 22 is greater than that in the edge annular region 23. In some embodiments, since the gas supply assembly also supplies gas through the third gas hole provided in the annular connecting side wall, the gas concentration in the edge region of the secondary uniform gas space is greater than that in the central region. By providing the first gas hole 25 in the transition annular region with a greater density than that in the edge annular region, uniform gas flow distribution in the secondary uniform gas space can be achieved, so that the plasma has a uniform distribution on the substrate surface after flowing through the second gas hole 26. Further, the first shower plate has a first gas hole aperture in the transition annular region that is greater than that in the edge annular region.
[0045] As shown in Figure 2B , the first shower plate has only the first gas hole 25 in the edge annular region 23, and no first gas hole 25 in the transition annular region. By increasing the density and aperture of the first gas hole in the edge annular region, the edge gas supply through the first shower plate and the edge gas supply through the second gas inlet, the uniform distribution of process gas or plasma in the secondary uniform gas space is improved. As shown in Figure 2C , the first shower plate has only the first gas hole 25 in the transition annular region 22.
[0046] In some embodiments, the first gas holes in the transition annular region and / or the edge annular region of the first shower plate are arranged radially. The radial arrangement refers to the arrangement of the first gas holes in different regions of the first shower plate along the diameter or radius direction.
[0047] In some embodiments, the first gas holes in the transition annular region and / or the edge annular region of the first shower plate are arranged circumferentially. The circumferential arrangement refers to the distribution of the first gas holes in the first shower plate along a concentric circular ring.
[0048] The specific distribution of the first gas holes in the transition annular region and the edge annular region of the first shower plate is not limited. Specifically, the distribution of the first gas holes in the transition annular region and the edge annular region can also have dense and sparse regions. In other words, the first gas holes in each region of the transition annular region and the edge annular region of the first shower plate can also be unevenly distributed.
[0049] In some embodiments, the second gas holes 26 of the second shower plate have the same aperture, and the spacing between adjacent second gas holes is the same. The same spacing refers to the same distance between any two adjacent second gas hole circles.
[0050] In some embodiments, the minimum aperture of the first air hole 25 of the first spray plate is larger than the aperture of the second air hole 26 of the second spray plate, and the first air hole and the second air hole are staggered. The staggered arrangement means that the opening position of the first air hole is not opposite to the opening position of the second air hole, that is, the process gas or plasma cannot flow directly from the first air inlet through the first air hole and the second air hole to reach the substrate surface.
[0051] In some embodiments, such as Figure 3 As shown, the first spray plate 121 has a first surface 321 opposite to the second spray plate, and the second spray plate 122 has a second surface 323 opposite to the first spray plate 121; an annular connecting sidewall 36 is provided between the first surface 321 and the second surface 323, and the annular connecting sidewall is located at the edge of the first spray plate and the second spray plate; the upper surface of the annular connecting sidewall is connected to the first surface, and the lower surface of the annular connecting sidewall is connected to the second surface, and the upper surface and the lower surface are connected through an inner annular surface and an outer annular surface; the annular connecting sidewall is provided with a third air hole 361, and the third air hole 361 is arranged along the thickness direction of the annular sidewall.
[0052] like Figure 3 As shown, the edge of the second spray plate is provided with an annular mounting protrusion 40 that is higher than the second surface 323; the first spray plate is integrally formed with the annular connecting sidewall, and the edge of the first spray plate is provided with an annular extension 1211, which is connected to the sidewall of the annular mounting protrusion 40; the lower surface of the annular extension of the first spray plate, the second surface of the second spray plate, the annular outer surface of the annular connecting sidewall, and the sidewall of the annular mounting protrusion form a first annular uniform air zone 30.
[0053] The first spray plate has a first spray plate body, which includes a central circular area, a transition annular area, and an edge annular area. The first spray plate body has an opening. The edge annular area of the first spray plate has an annular extension 1211, which does not have an opening. The annular extension 1211 is connected to the annular mounting protrusion of the second spray plate. The lower surface of the annular extension has an annular connecting sidewall. The first spray plate is mounted on the second surface 323 of the second spray plate through the annular connecting sidewall. The junction of the annular connecting sidewall 36 and the second spray plate has a first sealing structure 39. In other words, the first spray plate is connected to the second spray plate through the annular connecting sidewall.
[0054] The second spray plate is provided with an annular mounting protrusion 40 that is higher than the second surface 323. The annular mounting protrusion is also higher than the third surface 322 of the first spray plate. The second spray plate is connected to the upper cavity cover 14 through the annular mounting protrusion 40, and a second sealing structure 38 is provided at the connection between the annular mounting protrusion and the upper cavity cover.
[0055] In some embodiments, the second gas inlet 142 is located in the annular mounting protrusion of the second shower plate, and the second gas inlet 142 is in communication with the first annular gas distribution zone 30. The third gas holes formed in the annular connecting side wall have high-density zones and low-density zones, and the low-density zones are arranged near the second gas inlet area, and the high-density zones are arranged away from the second gas inlet area.
[0056] As shown in Figure 1 The annular mounting protrusion 40 is provided with a second gas inlet 142, which is in communication with the gas inlet pipe 19 of the chamber side wall, and is used to supply gas to the second gas inlet of the gas supply assembly. When the first process gas introduced by the first gas inlet 141 is NH3 and hydrogen, the second process gas introduced by the second gas inlet 142 is a mixed gas of HF, helium and hydrogen.
[0057] When the second process gas enters the first annular gas distribution zone through the second gas inlet 142, the gas flow concentration near the second gas inlet is greater than that away from the second gas inlet, so that the third gas holes formed in the annular connecting side wall have high-density zones and low-density zones, and the low-density zones are arranged near the second gas inlet area, and the high-density zones are arranged away from the second gas inlet area. The uniformity of the gas inlet from the third gas hole can be improved. Further, a plurality of second gas inlets can be arranged in the annular mounting protrusion 40 of the second shower plate, and the number of the second gas inlets can be three, and the second gas inlets are uniformly distributed on the circumference.
[0058] Further, the opening shape of the third gas hole is not limited, which can be circular, oval, square, etc., and is preferably circular. The aperture of the third gas hole is not limited, which can be greater than or less than the second gas hole.
[0059] The thickness of the first gas shower plate and the second gas shower plate ranges from 1 to 50 mm. The distance between the first surface 321 of the first shower plate and the second surface 323 of the second shower plate ranges from 3 to 10 mm.
[0060] It is to be noted that, in the present document, relational terms such as first and second and the like can be used solely to distinguish one entity or action from another entity or action without necessarily implying any actual relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can also include other elements not expressly listed or inherent to such process, method, article, or apparatus. An element proceeded by "comprises... a" does not, without more constraints, exclude the presence of additional identical elements in the process, method, article, or apparatus that comprises the element. Additionally, the term "coupled" is defined as connected, whether directly or indirectly, while the term "connected" is defined as directly or indirectly connected. In the document, the term "optional" means that the feature can or can not be present, and that the process, method, article, or apparatus can or can not include the feature.
[0061] Although the present application has been described in detail through the preferred embodiments, it should be understood that the above description is not to be considered as limiting the present application. Various modifications and alterations of the present application will become apparent to those skilled in the art from the above description without departing from the scope of the present application. Accordingly, the scope of the present application should be determined by the appended claims and their equivalents.
Claims
1. A gas supply assembly, characterized by, The gas supply assembly comprises: a first shower plate, which comprises a central circular area, an edge annular area, and a transition annular area between the central circular area and the edge annular area; the first shower plate is provided with first air holes arranged along the thickness direction of the first shower plate; the first shower plate is provided with the first air holes only in the transition annular area and / or the edge annular area; a second shower plate, which is provided with second air holes arranged along the thickness direction of the second shower plate; the first shower plate and the second shower plate are arranged in a stacked manner; a first air inlet, which is located directly above the first shower plate; a second air inlet, which is located between the first shower plate and the second shower plate and at the edge of the first shower plate and the second shower plate.
2. A gas supply assembly according to claim 1, wherein, The transition annular area and the edge annular area of the first shower plate are provided with the first air holes, and the density of the first air holes in the transition annular area is greater than that in the edge annular area.
3. A gas supply assembly according to claim 2, wherein, The first air holes in the transition annular area of the first shower plate have a larger aperture than the first air holes in the edge annular area.
4. The gas supply assembly of claim 1, wherein The first air holes in the transition annular area and / or the edge annular area of the first shower plate are arranged in a radial direction.
5. The gas supply assembly of claim 1, wherein The first air holes in the transition annular area and / or the edge annular area of the first shower plate are arranged in a circumferential direction.
6. A gas supply assembly according to claim 3, wherein The minimum aperture of the first air holes of the first shower plate is greater than the aperture of the second air holes of the second shower plate, and the first air holes and the second air holes are arranged in a staggered manner.
7. The gas supply assembly of claim 1, wherein The first shower plate has a first surface opposite to the second shower plate, and the second shower plate has a second surface opposite to the first shower plate; an annular connecting side wall is arranged between the first surface and the second surface, and the annular connecting side wall is located at the edge of the first shower plate and the second shower plate. The upper surface of the annular connecting side wall is connected to the first surface, and the lower surface of the annular connecting side wall is connected to the second surface; the annular connecting side wall is provided with third air holes arranged along the thickness direction of the annular connecting side wall.
8. A gas supply assembly according to claim 7, wherein, The edge of the second shower plate is provided with an annular mounting protrusion higher than the second surface of the second shower plate; the first shower plate is integrally formed with the annular connecting side wall, the edge of the first shower plate is provided with an annular extension, the annular extension is connected to the side wall of the annular mounting protrusion, and the lower surface of the annular extension of the first shower plate, the second surface of the second shower plate, the annular connecting side wall, and the side wall of the annular mounting protrusion form a first annular uniform gas distribution area; the second air inlet is located in the annular mounting protrusion of the second shower plate, and the second air inlet is in communication with the first annular uniform gas distribution area.
9. A gas supply assembly according to claim 8, wherein, The third air holes formed in the annular connecting side wall have a high-density area and a low-density area; the low-density area is arranged near the second air inlet area, and the high-density area is arranged away from the second air inlet area.
10. A semiconductor etching apparatus, characterized by comprising: The gas supply assembly comprises: an upper cavity cover, which is provided with a first air inlet in the central position; the gas supply assembly as claimed in any one of claims 1 to 9 is fixed to the upper cavity cover, and the gas supply assembly is located directly below the first air inlet. The chamber is provided with a support base inside, and the gas supply assembly is located directly above the support base, and the center of the gas supply assembly is aligned with the center of the support base.