Substrate for semiconductor installation
By employing a multilayer structure design using materials such as alumina, silicon nitride, and silicon carbide in semiconductor mounting substrates, the problems of insufficient heat resistance and insulation performance of the substrates are solved, resulting in better mechanical strength and thermal stability, and extending service life.
Patent Information
- Application Number
- CN202422948279.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-02
- Publication Date
- 2025-12-12
- Estimated Expiration
- 2034-12-02
AI Technical Summary
Existing semiconductor mounting substrates exhibit poor heat resistance and insulation properties after prolonged use, affecting their lifespan and resulting in inadequate adhesion.
It adopts a multi-layer structure design, including aluminum oxide as the first insulating layer, silicon nitride as the first heat-resistant layer, and silicon carbide as the first strength layer, and improves mechanical strength and thermal stability through horizontally arranged reinforcing plates and staggered reinforcing ribs.
It improves the mechanical strength, insulation properties and heat resistance of the substrate, extends its service life and enhances the substrate's adhesion.
Smart Images
Figure CN223665445U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model discloses semiconductor mounting substrate technical field especially a kind of substrate for semiconductor installation. BACKGROUND
[0002] Semiconductor mounting substrate is important component in semiconductor chip packaging process, mainly used for fixing and supporting semiconductor chip, and provide electrical connection, protection, support, heat dissipation and the like function, packaging substrate plays a vital role in integrated circuit chip production process, it is the carrier of semiconductor chip, ensure that chip can work stably and realize effective connection with external circuit, semiconductor substrate can adopt multiple materials, including copper, glass fiber and the like, in ball grid array packaging, semiconductor substrate is used to realize the electrical connection between chip inside packaging and packaging external printed circuit board.
[0003] Most of the semiconductor mounting substrate on the market currently, when using for a long time, does not have good heat resistance and insulation performance, thereby affecting the service life of the semiconductor mounting substrate, and the existing semiconductor mounting substrate has poor firmness, thereby affecting the service life of the semiconductor mounting substrate. SUMMARY
[0004] This section aims to outline some aspects of the embodiments of the present utility model and briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section and the abstract of the specification and the utility model name to avoid obscuring the purpose of this section, the abstract of the specification and the utility model name. Such simplifications or omissions cannot be used to limit the scope of the utility model.
[0005] In view of the above or existing technology, most of the semiconductor mounting substrate on the market currently, when using for a long time, does not have good heat resistance and insulation performance, thereby affecting the service life of the semiconductor mounting substrate, and the existing semiconductor mounting substrate has poor firmness, thereby affecting the service life of the semiconductor mounting substrate, therefore the present utility model is proposed.
[0006] Therefore, the purpose of the present utility model is to provide a semiconductor mounting substrate.
[0007] To solve the above technical problems, the utility model provides the following technical scheme: a semiconductor mounting substrate, including substrate main body, it includes semiconductor chip, the side wall of semiconductor chip is installed with the side wall of substrate main body;
[0008] Substrate main body, including first insulating layer, the bottom end of first insulating layer is provided with first heat-resistant layer, and the bottom end of first heat-resistant layer is provided with first strength layer, the bottom end of first strength layer is provided with second strength layer, and the bottom end of second strength layer is provided with base layer main body.
[0009] As a preferred form of the utility model a kind of semiconductor installation substrate, wherein: the material of the first insulating layer is aluminum oxide.
[0010] As a preferred form of the utility model a kind of semiconductor installation substrate, wherein: the material of the first heat-resistant layer is silicon nitride, and the thickness of first heat-resistant layer is 0.3-0.5cm.
[0011] As a preferred form of the utility model a kind of semiconductor installation substrate, wherein: the inside of the first strength layer is transversely arranged and mounted with first reinforcing plate, and the inside of the first reinforcing plate is mounted with indium phosphide.
[0012] As a preferred form of the utility model a kind of semiconductor installation substrate, wherein: the shape of the first reinforcing plate is arc-shaped elastic plate.
[0013] As a preferred form of the utility model a kind of semiconductor installation substrate, wherein: the inside of the second strength layer is transversely arranged and mounted with second reinforcing plate, and the inside of the second strength layer is transversely and perpendicularly staggered and mounted with reinforcing rib.
[0014] As a preferred form of the utility model a kind of semiconductor installation substrate, wherein: the shape of the second reinforcing plate is isosceles trapezoid.
[0015] The semiconductor installation substrate of the utility model has the following beneficial effects:
[0016] 1, the utility model first through the inside of second strength layer is transversely and perpendicularly staggered and mounted with reinforcing rib, and the material of reinforcing rib is glass fiber, so that the firm effect of substrate main body is better, and the inside of the first strength layer is transversely arranged and mounted with first reinforcing plate, and the inside of the first reinforcing plate is mounted with indium phosphide, so that the material of the first reinforcing plate is silicon carbide, so that the mechanical strength height of substrate main body and thermal stability are achieved.
[0017] 2, the utility model first through the material of the first insulating layer is aluminum oxide, and aluminum oxide ceramic substrate has good mechanical strength and insulation performance, so that substrate main body has good mechanical strength and insulation performance, and the material of the first heat-resistant layer is silicon nitride, and silicon nitride substrate becomes the preferred material of high-power, high-density, high-temperature and high-frequency device packaging due to its high thermal conductivity, high strength, high toughness, low thermal expansion coefficient and other characteristics, so that substrate main body has excellent high-temperature resistance and corrosion resistance. BRIEF DESCRIPTION OF DRAWINGS
[0018] In order to more clearly illustrate the technical scheme of the embodiments of the present application, the drawings needed to be used in the embodiment description will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the premise of not deviating from the connotation of the present application.
[0019] Figure 1 It is a schematic view of the front structure of a semiconductor mounting substrate.
[0020] Figure 2 It is a schematic view of the top structure of a semiconductor mounting substrate.
[0021] Figure 3 It is a schematic view of the internal structure of a semiconductor mounting substrate.
[0022] Figure 4 It is a schematic view of the second reinforcing plate structure of a semiconductor mounting substrate.
[0023] Figure 5 It is a schematic view of the first reinforcing plate structure of a semiconductor mounting substrate.
[0024] In the drawings, the components represented by each reference numeral are listed as follows:
[0025] 1, substrate main body; 101, semiconductor chip; 111, first insulating layer; 112, first heat-resistant layer; 113, first strength layer; 1131, first reinforcing plate; 1132, indium phosphide; 114, second strength layer; 1141, second reinforcing plate; 1142, reinforcing rib; 115, base main body. DETAILED DESCRIPTION
[0026] In order to make the above-mentioned purposes, features and advantages of the present application more apparent and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the drawings.
[0027] In the following description, many specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be practiced in other ways different from those described herein without departing from the scope of the present application, and those skilled in the art can make similar generalizations without deviating from the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.
[0028] Secondly, the "one embodiment" or "embodiment" referred to herein means that the specific features, structures or characteristics can be included in at least one implementation of the present application. In this specification, "in one embodiment" does not mean the same embodiment, nor is it an independent or alternative embodiment that excludes other embodiments.
[0029] Embodiment one: refer to Figures 1-5 , the first embodiment of the utility model provides a kind of substrate for semiconductor installation, can realize most substrate for semiconductor installation on current market, when long time is used, it does not have good heat resistance and insulation performance, to thereby influence the service life of semiconductor installation substrate, while the firm effect of existing semiconductor installation substrate is poor, to thereby influence the service life of semiconductor installation substrate Problem, including substrate main body 1, it includes semiconductor chip 101, the sidewall of semiconductor chip 101 is installed with the sidewall of substrate main body 1;
[0030] Substrate main body 1, it includes first insulating layer 111, the bottom of first insulating layer 111 is provided with first heat-resistant layer 112, and the bottom of first heat-resistant layer 112 is provided with first strength layer 113, the bottom of first strength layer 113 is provided with second strength layer 114, and the bottom of second strength layer 114 is provided with base layer main body 115;
[0031] The material of first insulating layer 111 is aluminum oxide, the material of first heat-resistant layer 112 is silicon nitride, and the thickness of first heat-resistant layer 112 is 0.3-0.5cm.
[0032] Specific working principle is, first by the material of first insulating layer 111 is aluminum oxide, aluminum oxide ceramic substrate has good mechanical strength and insulation performance, to thereby make substrate main body 1 have good mechanical strength and insulation performance, simultaneously by the material of first heat-resistant layer 112 is silicon nitride, silicon nitride substrate because of its high thermal conductivity, high strength, high toughness, low thermal expansion coefficient and other characteristics, become the preferred material of high-power, high-density, high-temperature and high-frequency device packaging, make its substrate main body 1 have excellent high-temperature resistance, corrosion resistance.
[0033] Embodiment two: refer to Figures 1-5 , the first embodiment of the utility model, the embodiment provides a kind of substrate for semiconductor installation, can realize most substrate for semiconductor installation on current market, when long time is used, it does not have good heat resistance and insulation performance, to thereby influence the service life of semiconductor installation substrate, while the firm effect of existing semiconductor installation substrate is poor, to thereby influence the service life of semiconductor installation substrate Problem, first strength layer 113 is internally arranged in horizontal direction and is installed with first reinforcing plate 1131, and first reinforcing plate 1131 is internally installed with indium phosphide 1132, the shape of first reinforcing plate 1131 is arc-shaped elastic plate, second strength layer 114 is internally arranged in horizontal direction and is installed with second reinforcing plate 1141, second strength layer 114 is internally arranged in horizontal direction and is installed with reinforcing rib 1142, which is perpendicular to each other and is staggered, the shape of second reinforcing plate 1141 is isosceles trapezoid.
[0034] Specific working principle is, through the inside of second strength layer 114 is transversely perpendicular staggered arrangement installation has reinforcing rib 1142, and through the material of reinforcing rib 1142 is glass fiber, thereby to make the firm effect of base plate main body 1 better, through the inside of first strength layer 113 is transversely arranged installation has first reinforcing plate 1131, and the inside of first reinforcing plate 1131 is installed with indium phosphide 1132, thereby through the material of first reinforcing plate 1131 is silicon carbide, thereby to make the mechanical strength height of base plate main body 1, and thermal stability.
[0035] The above description of disclosed embodiments enables one of ordinary skill in the art to make or use the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A substrate for semiconductor mounting, characterized in that: include, The substrate body (1) includes a semiconductor chip (101), and the sidewalls of the semiconductor chip (101) are all mounted with the sidewalls of the substrate body (1). The substrate body (1) includes a first insulating layer (111), a first heat-resistant layer (112) is disposed at the bottom end of the first insulating layer (111), a first strength layer (113) is disposed at the bottom end of the first heat-resistant layer (112), a second strength layer (114) is disposed at the bottom end of the first strength layer (113), and a base body (115) is disposed at the bottom end of the second strength layer (114).
2. The semiconductor mounting substrate as described in claim 1, characterized in that: The first insulating layer (111) is made of aluminum oxide.
3. A semiconductor mounting substrate as described in claim 1, characterized in that: The first heat-resistant layer (112) is made of silicon nitride, and the thickness of the first heat-resistant layer (112) is 0.3-0.5cm.
4. A semiconductor mounting substrate as described in claim 1, characterized in that: The first strength layer (113) has a first reinforcing plate (1131) installed in a horizontal arrangement inside, and indium phosphide (1132) is installed inside the first reinforcing plate (1131).
5. A semiconductor mounting substrate as described in claim 4, characterized in that: The first reinforcing plate (1131) is an arc-shaped elastic plate.
6. A semiconductor mounting substrate as described in claim 1, characterized in that: The interior of the second strength layer (114) is provided with a second reinforcing plate (1141) arranged in a horizontal direction, and the interior of the second strength layer (114) is provided with reinforcing ribs (1142) arranged in a horizontal and perpendicular staggered manner.
7. A semiconductor mounting substrate as described in claim 6, characterized in that: The second reinforcing plate (1141) is an isosceles trapezoid.