Czochralski method crystal growth device

Abstract

The embodiment of the utility model provides a Czochralski method crystal growth device, and relates to the technical field of crystal preparation. The Czochralski method crystal growth device comprises a furnace body, a crucible, a lifting rotating device, a seed rod adjusting device and a seed rod, wherein the crucible is arranged in the furnace body; the lifting and rotating device comprises a lifting and rotating mechanism and a lifting rod, the lifting and rotating mechanism is arranged above the furnace body, and the lifting rod is connected with the lifting and rotating mechanism and located in the furnace body; the seed crystal rod adjusting device and the seed crystal rod are arranged in the furnace body, and the lifting rod, the seed crystal rod adjusting device and the seed crystal rod are connected in sequence; the lifting rotating mechanism is used for driving the lifting rod to lift or rotate, and the seed rod adjusting device is used for driving the seed rod to move relative to the crucible. The seed crystal rod can be directly adjusted in the furnace body, the problem of deviation of the seed crystal rod is solved, and the working efficiency and the crystal growth efficiency are improved; and the conical heat preservation cover is arranged, so that the uniformity and the symmetry of a temperature field can be improved, and the crystal growth quality is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to crystal preparation technical field, specifically, relate to a kind of crystal growth device of pulling method. BACKGROUND

[0002] The pulling method, also known as the Czochralski method, is a traditional single crystal growth method for preparing large-size and high-quality single crystals from a melt. When growing single crystals using the pulling method, the crystal raw material is heated and melted in a crucible, the temperature distribution in the furnace is controlled, and the seed crystal is immersed in the melt to create a suitable temperature gradient between the seed crystal and the melt. A mechanical device is used to pull and rotate the seed crystal rod at a certain speed, thereby continuously crystallizing the melt at the solid-liquid interface.

[0003] However, external vibrations or mechanical structure operation can cause the growth of the crystal to deviate. During the actual growth of the crystal, the temperature is generally heated to one or two thousand degrees. If the seed crystal rod deviates during the growth process, the experiment needs to be stopped, the temperature needs to be reduced to room temperature, and then the furnace needs to be opened and adjusted for the seed crystal rod. After adjustment, the furnace needs to be reloaded and the temperature needs to be raised again for crystal growth. This process significantly reduces work efficiency and crystal growth efficiency. SUMMARY

[0004] The utility model aims to provide a kind of crystal growth device of pulling method, it can be directly adjusted seed crystal rod in furnace body, solve its deviation problem, without the operation of opening furnace and re-loading, improve work efficiency and crystal growth efficiency.

[0005] The embodiments of the utility model are implemented as follows:

[0006] In a first aspect, the utility model provides a kind of crystal growth device of pulling method, comprising:

[0007] Furnace body;

[0008] Crucible, the crucible is arranged in the furnace body;

[0009] Pulling rotation device, the pulling rotation device includes pulling rotation mechanism and pulling rod, the pulling rotation mechanism is arranged above the furnace body, the pulling rod is connected with the pulling rotation mechanism, and located in the furnace body;

[0010] Seed crystal rod adjusting device and seed crystal rod, the seed crystal rod adjusting device and the seed crystal rod are all arranged in the furnace body, and the pulling rod, the seed crystal rod adjusting device and the seed crystal rod are sequentially connected;

[0011] Among them, the pulling rotation mechanism is used to drive the pulling rod to lift or rotate, and the seed crystal rod adjusting device is used to drive the seed crystal rod to move relative to the crucible.

[0012] In an optional embodiment, the seed rod adjusting device comprises a seed rod adjusting mechanism and a seed rod clamp, the pulling rod, the seed rod adjusting mechanism, the seed rod clamp and the seed rod are sequentially connected;

[0013] The seed rod adjusting mechanism is configured to drive the seed rod clamp to move relative to the crucible.

[0014] In an optional embodiment, the seed rod adjusting mechanism comprises a first sliding rail, a first sliding block and a first driving member, the first sliding rail is connected to an end of the pulling rod away from the pulling rotation mechanism, the first sliding block is slidably arranged on the first sliding rail, and the seed rod clamp is connected to the first sliding block.

[0015] The first driving member is configured to drive the first sliding block to move relative to the first sliding rail.

[0016] In an optional embodiment, the first sliding block is slidably arranged on the first sliding rail in a first direction.

[0017] The seed rod adjusting mechanism further comprises a second sliding rail, a second sliding block and a second driving member, the second sliding rail is connected to the first sliding block, the second sliding block is slidably arranged on the first sliding rail in a second direction, the seed rod clamp is connected to the second sliding block, and the second driving member is configured to drive the second sliding block to move relative to the second sliding rail; the pulling rotation mechanism and the crucible are spaced apart in a third direction.

[0018] The first direction, the second direction and the third direction are perpendicular to each other.

[0019] In an optional embodiment, the seed rod adjusting device further comprises a universal ball head, the universal ball head is located between the seed rod adjusting mechanism and the seed rod clamp, and the universal ball head is connected to the seed rod adjusting mechanism and the seed rod clamp.

[0020] In an optional embodiment, the Czochralski crystal growth device further comprises a heat preservation cover, the heat preservation cover is arranged in the furnace body and covers the opening of the crucible to form a crystal growth chamber between the crucible and the heat preservation cover.

[0021] The heat preservation cover is located between the pulling rotation mechanism and the crucible, the pulling rod passes through the heat preservation cover and extends into the crystal growth chamber.

[0022] In an optional embodiment, the heat preservation cover is conical.

[0023] In an optional embodiment, the Czochralski crystal growth device further comprises a temperature adjusting device arranged in the furnace body and used for adjusting the temperature in the heat preservation cover.

[0024] In an optional embodiment, the temperature adjusting device comprises a heating element arranged in the furnace body and located at one side of the heat preservation cover, and a lifting mechanism connected with the heating element and used for driving the heating element to move relative to the heat preservation cover.

[0025] In an optional embodiment, the heating element and the lifting mechanism are both in plurality, and the plurality of heating elements are arranged in a circumferential direction of the heat preservation cover and connected with the plurality of lifting mechanisms one by one.

[0026] The beneficial effects of the embodiments of the present application include:

[0027] The Czochralski crystal growth device comprises a furnace body, a crucible, a pulling rotation device, a seed rod adjusting device and a seed rod, the crucible is arranged in the furnace body; the pulling rotation device comprises a pulling rotation mechanism and a pulling rod, the pulling rotation mechanism is arranged above the furnace body, and the pulling rod is connected with the pulling rotation mechanism and located in the furnace body; the seed rod adjusting device and the seed rod are both arranged in the furnace body, and the pulling rod, the seed rod adjusting device and the seed rod are connected in sequence; wherein the pulling rotation mechanism is used for driving the pulling rod to lift or rotate, and the seed rod adjusting device is used for driving the seed rod to move relative to the crucible.

[0028] That is to say, during the early stage of furnace body loading and the process of heating the crucible for crystal growth, the position of the seed rod can be directly adjusted in the furnace body in real time through the seed rod adjusting device, so that the seed rod is located at the center position of the temperature field of the crucible, the crystal is prevented from deviating during the growth process, the operation of opening the furnace and reloading is not needed, the work efficiency and the crystal growth efficiency are improved, and the direction of the grown crystal is the same as that of the seed crystal, so that the quality of the grown crystal is improved. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical scheme of the embodiments of the present application, the drawings needed in the embodiments will be briefly introduced as follows, and it should be understood that the following drawings only show some embodiments of the present application, and should not be regarded as a limitation on the scope, and other related drawings can also be obtained by those skilled in the art without creative labor on the premise of not paying creative labor.

[0030] Figure 1 The structure schematic diagram of the Czochralski crystal growth device provided by the embodiments of the present application is shown in the figure.

[0031] Figure 2The utility model provides a lifting rod, seed crystal rod adjusting device and assembly schematic drawing between seed crystal rods for the embodiment of the utility model.

[0032] Icon: 100 - crystal growth device of pulling method;10 - furnace body;20 - crucible;30 - pulling rotation device;31 - pulling rotation mechanism;32 - pulling rod;40 - seed crystal rod adjusting device;41 - seed crystal rod adjusting mechanism;411 - first slide rail;412 - first sliding block;413 - second slide rail;414 - second sliding block;42 - seed crystal rod clamp;43 - universal ball head;50 - seed crystal rod;60 - heat preservation cover;70 - crystal growth chamber;80 - temperature adjusting device;81 - heating piece;82 - lifting mechanism;91 - heat preservation layer;92 - induction heating coil;200 - melt;300 - growing crystal. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be described clearly and completely below in combination with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. The components of the embodiments of the utility model described and shown in the drawings can be arranged and designed in various different configurations.

[0034] Therefore, the following detailed description of the embodiments of the utility model provided in the drawings is not intended to limit the scope of the claimed utility model, but only represents selected embodiments of the utility model. Based on the embodiments in the utility model, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the utility model.

[0035] It should be noted that: similar signs and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0036] In the description of the utility model, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship commonly placed when the utility model product is used, and is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the utility model. In addition, the terms "first", "second", "third" and the like are only used for differentiation in description, and cannot be understood as indicating or implying relative importance.

[0037] In addition, the terms "horizontal", "vertical" and the like do not mean that the components must be absolutely horizontal or vertical, but can be slightly inclined. For example, "horizontal" only means that it is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0038] In the description of the present application, it should be pointed out that unless otherwise specified and limited, the terms "arrangement", "installation", "connection" and "connection" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be connected inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0039] As described in the background, when growing a single crystal by the Czochralski method, the crystal raw material is heated and melted in a crucible, the temperature distribution in the furnace is controlled, and the seed crystal is immersed in the melt to form a suitable temperature gradient between the seed crystal and the melt, while being pulled and rotated at a certain rate, so that the melt is continuously crystallized at the solid-liquid interface. However, external vibration or operation of mechanical structure may cause the growth of the crystal to deviate, and in the actual growth process of the crystal, the temperature generally needs to be heated to one or two thousand degrees, if the seed rod deviates during the growth process, the experiment needs to be stopped, the temperature needs to be reduced to room temperature, and then the furnace is opened and the seed rod is adjusted, and then the furnace is reloaded and the temperature is raised for crystal growth again. This process significantly reduces the work efficiency and the crystal growth efficiency.

[0040] Based on this, please refer to Figure 1 and Figure 2 The embodiment of the present application provides a Czochralski crystal growth device 100, which can effectively improve the above-mentioned technical problems, that is, it can directly adjust the seed rod 50 in the furnace body 10, solve the problem of deviation, and does not need to be opened and reloaded, thereby improving the work efficiency and the crystal growth efficiency.

[0041] It should be noted that the first direction mentioned in the following content is the X direction shown in Figure 1 and Figure 2 The second direction is the Y direction shown in Figure 1 and Figure 2 The third direction is the Z direction shown in Figure 1 and Figure 2 The Czochralski crystal growth device 100 will be described in detail below.

[0042] Please refer to Figure 1 , Figure 1 The structure diagram of the Czochralski crystal growth device 100 provided in the embodiment, combined withFigure 1 The Czochralski crystal growth device 100 comprises a furnace body 10, a crucible 20, a pulling rotation device 30, a seed rod adjusting device 40 and a seed rod 50, the crucible 20 is arranged in the furnace body 10; the pulling rotation device 30 comprises a pulling rotation mechanism 31 and a pulling rod 32, the pulling rotation mechanism 31 is arranged above the furnace body 10, the pulling rod 32 is connected with the pulling rotation mechanism 31 and located in the furnace body 10; the seed rod adjusting device 40 and the seed rod 50 are both arranged in the furnace body 10, and the pulling rod 32, the seed rod adjusting device 40 and the seed rod 50 are sequentially connected; wherein the pulling rotation mechanism 31 is used for driving the pulling rod 32 to lift or rotate, and the seed rod adjusting device 40 is used for driving the seed rod 50 to move relative to the crucible 20.

[0043] That is to say, during the early stage of the furnace body 10 and the heating of the crucible 20 for crystal growth, the position of the seed rod 50 can be directly adjusted in the furnace body 10 in real time through the seed rod adjusting device 40, so that the seed rod 50 is located at the center position of the temperature field of the crucible 20, and the crystal is prevented from deviating during the growth process, without the need for opening the furnace and re-filling the furnace, thereby improving the work efficiency and the crystal growth efficiency; and the direction of the grown crystal is the same as that of the seed, thereby improving the quality of the grown crystal 300.

[0044] As shown in Figure 1 , the pulling rotation mechanism 31 can drive the pulling rod 32 to lift and rotate, and simultaneously drive the seed rod adjusting device 40 and the seed rod 50 to lift and rotate, so as to realize the pulling and rotation of the melt 200 arranged in the crucible 20 at a certain speed, and continuously crystallize at the solid-liquid interface, thereby forming the grown crystal 300. Through the seed rod adjusting device 40, the positional relationship between the seed rod 50 and the crucible 20 can be adjusted, that is, the positional relationship between the seed rod 50 and the center of the melt 200 or the center of the grown crystal 300 is adjusted, so that the seed rod 50 always remains at the center position of the temperature field in the growth environment during the rotation and pulling, thereby improving the uniformity and symmetry of the temperature field during the crystal growth, and further ensuring the quality of the crystal growth.

[0045] It should be noted that, for those skilled in the art, it is easy to know that the pulling rotation mechanism 31 can realize the lifting and rotating movement of the pulling rod 32 through the cooperation of the lifting motor and the rotating motor, which will not be described herein.

[0046] Specifically, please refer to Figure 2 , Figure 2 the assembly schematic diagram provided by the present embodiment among the pulling rod 32, the seed rod adjusting device 40 and the seed rod 50, in combination with Figure 1 and Figure 2The seed rod adjusting device 40 comprises a seed rod adjusting mechanism 41 and a seed rod clamp 42, the pulling rod 32, the seed rod adjusting mechanism 41, the seed rod clamp 42 and the seed rod 50 are sequentially connected; the seed rod adjusting mechanism 41 is used for driving the seed rod clamp 42 to move relative to the crucible 20.

[0047] It is easily understood that the seed rod adjusting mechanism 41 can drive the seed rod clamp 42 to move to drive the seed rod 50 to move, thereby solving the problem of the deviation of the seed rod 50, and the seed rod clamp 42 is used for clamping the seed rod 50 to ensure the stability of the seed rod 50 in the rotating pulling process and also ensure the stability of the seed rod 50 in the process of moving relative to the crucible 20, thereby improving the quality of crystal growth.

[0048] Further, the seed rod adjusting mechanism 41 comprises a first sliding rail 411, a first sliding block 412 and a first driving member (not shown in the figure), the first sliding rail 411 is connected with the end of the pulling rod 32 away from the pulling rotating mechanism 31, the first sliding block 412 is slidably arranged on the first sliding rail 411, and the seed rod clamp 42 is connected with the first sliding block 412; the first driving member is used for driving the first sliding block 412 to move relative to the first sliding rail 411.

[0049] That is, the first driving member is used for driving the first sliding block 412 to move, thereby driving the seed rod clamp 42 and the seed rod 50 to move back and forth on the first sliding rail 411 as a whole to adjust the position of the seed rod 50.

[0050] It should be noted that the first sliding block 412 slides on the first sliding rail 411 to realize the back and forth movement of the seed rod 50 in one direction, and in order to improve the adjustment accuracy of the seed rod 50 to realize the adjustment function in more different positions, in the embodiment, the first sliding block 412 is slidably arranged on the first sliding rail 411 along a first direction; the seed rod adjusting mechanism 41 further comprises a second sliding rail 413, a second sliding block 414 and a second driving member (not shown in the figure), the second sliding rail 413 is connected with the first sliding block 412, the second sliding block 414 is slidably arranged on the first sliding rail 411 along a second direction, the seed rod clamp 42 is connected with the second sliding block 414, and the second driving member is used for driving the second sliding block 414 to move relative to the second sliding rail 413; the pulling rotating mechanism 31 and the crucible 20 are spaced apart along a third direction; wherein the first direction, the second direction and the third direction are perpendicular to each other.

[0051] As Figure 2As shown, specifically in this embodiment, a cross slide structure can be formed between the first slide rail 411, the first slide block 412, the second slide rail 413 and the second slide block 414. By sliding the first slide block 412 on the first slide rail 411, the second slide rail 413, the second slide block 414, the seed rod clamp 42 and the seed rod 50 can be driven to move back and forth in the first direction as a whole. Meanwhile, by driving the second slide block 414 to move by the second driving member, the seed rod clamp 42 and the seed rod 50 can be further driven to move back and forth in the second direction as a whole, so as to realize adjustment of more positions of the seed rod 50 and further improve the adjustment accuracy, thereby further improving the quality of crystal growth.

[0052] It should be noted that the first driving member and the second driving member can be motors. In actual crystal growth process, the vibration of external environment and the vibration generated by the operation of the growth device itself have little impact on the offset of the seed rod 50. By driving by the motor, the adjustment accuracy of the return amount can be more accurately ensured. Of course, in other embodiments, the first driving member and the second driving member can also be other forms of driving structures such as air cylinders or hydraulic cylinders.

[0053] In actual production process, after the seed rod clamp 42 clamps the seed rod 50, or is affected by other factors in the growth process, the seed rod 50 can have a certain deflection and cannot be guaranteed to be in a plumb state, which can also cause eccentricity of the seed rod 50 when rotating and affect the growth of the crystal.

[0054] In order to solve the deflection problem of the seed rod 50, please continue to combine Figure 2 The seed rod adjusting device 40 further comprises a universal ball head 43, which is located between the seed rod adjusting mechanism 41 and the seed rod clamp 42 and is connected with the seed rod adjusting mechanism 41 and the seed rod clamp 42. Specifically in this embodiment, the universal ball head 43 is located between the second slide block 414 and the seed rod clamp 42 and is connected with the second slide block 414 and the seed rod clamp 42.

[0055] Through the universal rotation of the universal ball head 43, the seed rod 50 can be guaranteed to be in a plumb state and will not have eccentricity, that is, the universal ball head 43 can solve the deflection problem of the seed rod 50, and the seed rod adjusting mechanism 41 can solve the offset problem of the seed rod 50. Under the cooperation of the two, the seed rod 50 can be guaranteed to rotate around the center of the melt 200 or the growing crystal 300 in the working process and will not draw a circle (both deflection and offset will draw a circle) on the solid-liquid surface, so as to guarantee uniform heating of the crystal and further improve the quality of crystal growth.

[0056] Please continue to combine Figure 1In order to ensure the stability of the temperature of the crystal in the process of pulling rotation, the crystal growth device 100 also includes a heat preservation cover 60, which is arranged in the furnace body 10 and covers the opening of the crucible 20 to form a crystal growth chamber 70 with the crucible 20; wherein the heat preservation cover 60 is located between the pulling rotation mechanism 31 and the crucible 20, and the pulling rod 32 penetrates the heat preservation cover 60 and extends into the crystal growth chamber 70.

[0057] Specifically, in the embodiment, the shape of the heat preservation cover 60 is conical. It should be noted that the conical heat preservation cover 60 is symmetrically arranged, which can make the temperature field in the crystal growth chamber 70 symmetrical and more uniform. It should be noted that the traditional heat preservation cover has a dense convection near both sides of the crystal, and the convection above the crystal is poor. However, the side part of the heat preservation cover 60 in the embodiment is inclined, which can increase the air convection above the crystal to some extent, so that the temperature field in the whole crystal growth chamber 70 is more uniform.

[0058] In addition, in the embodiment, the conical top of the heat preservation cover 60 is provided with a mounting hole, and the pulling rod 32 penetrates the mounting hole. By arranging the side part of the conical heat preservation cover 60 to be inclined, the opening area of the mounting hole can be reduced, thereby reducing the temperature loss of the airflow, and further improving the growth stability of the crystal and ensuring the quality of the crystal growth.

[0059] Further, in order to reduce the temperature gradient and ensure the growth stability of the crystal, the crystal growth device 100 also includes a temperature adjusting device 80 in the embodiment, which is arranged in the furnace body 10 and is used to adjust the temperature in the heat preservation cover 60.

[0060] Specifically, the temperature adjusting device 80 includes a heating element 81 and a lifting mechanism 82. The heating element 81 is arranged in the furnace body 10 and located on one side of the heat preservation cover 60. The lifting mechanism 82 is connected with the heating element 81 and is used to drive the heating element 81 to move relative to the heat preservation cover 60.

[0061] That is, in the process of pulling axial movement of the crystal, the heating element 81 can also move up and down under the drive of the lifting mechanism 82, thereby effectively controlling the temperature gradient of the crystal in the crystal growth chamber 70, reducing the axial temperature gradient, and further reducing the thermal stress of the head of the crystal, reducing the risk of defects or cracking of the crystal, and further improving the stability of the crystal growth and the quality of the crystal growth.

[0062] In order to make the heating temperature around the heat preservation cover 60 more uniform and realize the production of high-quality crystals, the number of the heating element 81 and the lifting mechanism 82 can be set to multiple. The multiple heating elements 81 are arranged at intervals along the circumference of the heat preservation cover 60, and the multiple lifting mechanisms 82 are connected with the multiple heating elements 81 one by one.

[0063] It should be noted that in the present embodiment, the number of heating elements 81 and lifting mechanisms 82 is two, and two heating elements 81 are arranged on both sides of the heat preservation cover 60. Of course, in other embodiments, the number of heating elements 81 and lifting mechanisms 82 can also be three, four, or five, etc., and the specific number of both needs to be determined according to the actual production situation and the design requirements of the heat preservation cover 60, etc.

[0064] In addition, it should be noted that the heating element 81 can adopt a resistance wire heating mode, and of course, other heating modes such as infrared heating or electric arc heating can also be adopted.

[0065] Please continue to combine Figure 1 The Czochralski crystal growth device 100 further includes a heat preservation layer 91 and an induction heating coil 92, the heat preservation layer 91 is wrapped around the crucible 20, and the induction heating coil 92 is arranged on the outer side of the heat preservation layer 91 in a circumferential direction. It is easy to understand that the heat preservation layer 91 can play a heat preservation role on the crucible 20, further ensuring the stability of crystal growth; and the induction heating coil 92 generates a magnetic field after being energized, and the electromagnetic heating principle can be used to realize the heating of the crucible 20, which will not be described in detail in the present embodiment.

[0066] In summary, the embodiment of the utility model provides a kind of Czochralski crystal growth device 100, and the Czochralski crystal growth device 100 includes furnace body 10, crucible 20, pulling rotation device 30, seed crystal rod adjusting device 40 and seed crystal rod 50, and crucible 20 is arranged in furnace body 10;Pulling rotation device 30 includes pulling rotation mechanism 31 and pulling rod 32, and pulling rotation mechanism 31 is arranged above furnace body 10, and pulling rod 32 is connected with pulling rotation mechanism 31, and located in furnace body 10;Seed crystal rod adjusting device 40 and seed crystal rod 50 are both arranged in furnace body 10, and pulling rod 32, seed crystal rod adjusting device 40 and seed crystal rod 50 are sequentially connected;Wherein, pulling rotation mechanism 31 is used to drive pulling rod 32 to lift or rotate, and seed crystal rod adjusting device 40 is used to drive seed crystal rod 50 to move relative to crucible 20.

[0067] It can be understood that during the early stage of furnace body 10 is filled with pot, and the growth process of crystal by heating crucible 20, the position of seed crystal rod 50 can be directly adjusted in furnace body 10 in real time by seed crystal rod adjusting device 40, so that it is located at the center position of the temperature field of crucible 20, to ensure that the crystal does not deviate during growth, without the operation of opening furnace and refilling, improve work efficiency and crystal growth efficiency;And also make the direction of the grown crystal same as the seed crystal, thereby improving the quality of the grown crystal 300.

[0068] The above merely describes specific embodiments of the present application and is not intended to limit the present application. For those skilled in the art, the present application can be variously changed and modified. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A Czochralski crystal growth apparatus characterized by comprising: The utility model relates to a crystal pulling device, including: furnace body (10); Crucible (20) is arranged in the furnace body (10); Pulling rotation device (30), the pulling rotation device (30) includes pulling rotation mechanism (31) and pulling rod (32), the pulling rotation mechanism (31) is arranged above the furnace body (10), the pulling rod (32) is connected with the pulling rotation mechanism (31), and located in the furnace body (10); Seed rod adjusting device (40) and seed rod (50), the seed rod adjusting device (40) and the seed rod (50) are arranged in the furnace body (10), and the pulling rod (32), the seed rod adjusting device (40) and the seed rod (50) are sequentially connected; Wherein, the pulling rotation mechanism (31) is used for driving the pulling rod (32) to lift or rotate, and the seed rod adjusting device (40) is used for driving the seed rod (50) to move relative to the crucible (20).

2. The Czochralski crystal growth apparatus according to claim 1, characterized by The seed rod adjusting device (40) includes seed rod adjusting mechanism (41) and seed rod clamp (42), and the pulling rod (32), the seed rod adjusting mechanism (41), the seed rod clamp (42) and the seed rod (50) are sequentially connected; The seed rod adjusting mechanism (41) is used for driving the seed rod clamp (42) to move relative to the crucible (20).

3. The Czochralski crystal growth apparatus according to claim 2, wherein The seed rod adjusting mechanism (41) includes first sliding rail (411), first sliding block (412) and first driving part, the first sliding rail (411) is connected with the one end of the pulling rod (32) away from the pulling rotation mechanism (31), the first sliding block (412) is slidably arranged in the first sliding rail (411), and the seed rod clamp (42) is connected with the first sliding block (412); The first driving part is used for driving the first sliding block (412) to move relative to the first sliding rail (411).

4. The Czochralski crystal growth apparatus according to claim 3, wherein The first sliding block (412) is slidably arranged in the first sliding rail (411) along a first direction; The seed rod adjusting mechanism (41) further includes second sliding rail (413), second sliding block (414) and second driving part, the second sliding rail (413) is connected with the first sliding block (412), the second sliding block (414) is slidably arranged in the first sliding rail (411) along a second direction, the seed rod clamp (42) is connected with the second sliding block (414), and the second driving part is used for driving the second sliding block (414) to move relative to the second sliding rail (413);The pulling rotation mechanism (31) and the crucible (20) are spaced apart along a third direction; Wherein, the first direction, the second direction and the third direction are perpendicular to each other.

5. The Czochralski crystal growth apparatus according to any one of claims 2 to 4, characterized in that The seed rod adjusting device (40) further comprises a universal ball head (43) located between the seed rod adjusting mechanism (41) and the seed rod clamp (42), and connected with the seed rod adjusting mechanism (41) and the seed rod clamp (42) at the same time.

6. The Czochralski crystal growth apparatus according to claim 1, wherein The Czochralski crystal growth device (100) further comprises a heat preservation cover (60) arranged in the furnace body (10) and covering the opening of the crucible (20) to form a crystal growth chamber (70) with the crucible (20). The heat preservation cover (60) is located between the pulling rotation mechanism (31) and the crucible (20), the pulling rod (32) passes through the heat preservation cover (60) and extends into the crystal growth chamber (70).

7. The Czochralski crystal growth apparatus according to claim 6, wherein The heat preservation cover (60) is conical in shape.

8. The Czochralski crystal growth apparatus according to claim 6 or 7, characterized by The Czochralski crystal growth device (100) further comprises a temperature adjusting device (80) arranged in the furnace body (10) and used for adjusting the temperature in the heat preservation cover (60).

9. The Czochralski crystal growth apparatus according to claim 8, wherein The temperature adjusting device (80) comprises a heating element (81) arranged in the furnace body (10) and located at one side of the heat preservation cover (60), and a lifting mechanism (82) connected with the heating element (81) and used for driving the heating element (81) to move relative to the heat preservation cover (60).

10. The Czochralski crystal growth apparatus according to claim 9, wherein The number of the heating element (81) and the lifting mechanism (82) is multiple, multiple heating elements (81) are arranged along the circumference of the heat preservation cover (60) at intervals, and multiple lifting mechanisms (82) are connected with multiple heating elements (81) one by one.

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