Generation device of large-size gallium nitride single crystal product

Abstract

The utility model discloses a device for generating a large-size gallium nitride single crystal product, which comprises a reaction kettle and a reaction furnace body arranged in the reaction kettle, the reaction kettle comprises a kettle body and a kettle cover which are detachably connected, the inside of the reaction furnace body is divided into a first reaction cavity and a second reaction cavity by a separator, and the first reaction cavity is communicated with the second reaction cavity. The first reaction cavity is used for dissolving a gallium nitride raw material to form an ionized intermediate compound, a connecting plate is arranged at the bottom of the kettle cover, and a plurality of seed crystals extending into the second reaction cavity are connected to the bottom of the connecting plate through a plurality of connecting pieces. The reaction furnace is reasonable in structural design, an ammonia solvent in the reaction furnace body is in a subcritical / supercritical state by forming the first reaction cavity and the second reaction cavity and making the temperature difference exist between the first reaction cavity and the second reaction cavity, convection flow is generated between the first reaction cavity and the second reaction cavity, gallium nitride seed crystals in the second reaction cavity are promoted to grow continuously, and the yield of gallium nitride is improved. After the reaction is finished, the seed crystal can be conveniently taken out from the mounting frame, and the operation is simple and convenient.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of crystal generation, especially relates to a generation device of large-specification gallium nitride single crystal product. BACKGROUND

[0002] Gallium nitride is a kind of semiconductor with large band gap, belongs to the so-called wide band gap semiconductor. It is an excellent material for microwave power transistor, and also a kind of semiconductor with important application value in blue light emitting device. The growth of GaN material is realized through the chemical reaction of Ga decomposed from TMGa and NH3 at high temperature.

[0003] GaN single crystal grown by ammonia thermal method has the characteristics of low crystal defect density (high quality), high yield and all-around crystal growth. At present, gallium nitride seed crystal is usually installed on a seed crystal holder and then placed in a growth container. The seed crystal is usually fixed by structures such as bolts and fasteners, which makes the operation cumbersome and difficult to disassemble, affecting the work efficiency. Therefore, we designed a generation device of large-specification gallium nitride single crystal product to solve the above problems. UTILITY MODEL CONTENTS

[0004] The utility model aims at solving the problems existing in the prior art, and provides a generation device of large-specification gallium nitride single crystal product. The first reaction cavity and the second reaction cavity are formed, and there is a temperature difference between them. The ammonia solvent in the reaction furnace body is in a subcritical / supercritical state. The convection flow is generated between the first reaction cavity and the second reaction cavity, which promotes the continuous growth of the gallium nitride seed crystal in the second reaction cavity. After the reaction is completed, the seed crystal can be easily taken out from the mounting frame, and the operation is simple.

[0005] In order to achieve the above purpose, the utility model adopts the following technical scheme:

[0006] A generation device of large-specification gallium nitride single crystal product, comprising a reaction kettle and a reaction furnace body arranged in the reaction kettle, the reaction kettle comprises a kettle body and a kettle cover which can be detachably connected, the reaction furnace body is divided into a first reaction cavity and a second reaction cavity by a partition, the first reaction cavity is used for dissolving gallium nitride raw materials to form ionized intermediate complex, the bottom of the kettle cover is provided with a connecting plate, the bottom of the connecting plate is connected with a plurality of seed crystals extending into the second reaction cavity through a plurality of connecting pieces for generating gallium nitride single crystal, the partition is used for transferring the ionized intermediate complex from the first reaction cavity to the second reaction cavity, a temperature control system for heating the first reaction cavity and the second reaction cavity is arranged between the reaction kettle and the reaction furnace body, and a gas pressure adjusting system for providing the pressure in the reaction cavity is arranged on the reaction kettle.

[0007] Preferably, the side walls of the kettle body and the kettle cover are provided with connecting flanges, and the two connecting flanges are locked by bolts.

[0008] Preferably, the partition comprises an annular support plate fixedly connected to the inner side wall of the reaction furnace body, and a partition plate is installed above the annular support plate, and a plurality of openings are installed through the partition plate.

[0009] Preferably, the connecting piece comprises an inner threaded ring arranged at the bottom of the connecting plate, a plurality of mounting frames are arranged from top to bottom below the connecting plate, two adjacent mounting frames are connected by a vertical plate, the upper end of the uppermost mounting frame is fixedly connected to a threaded rod extending into the corresponding inner threaded ring, the seed crystal is placed in the corresponding mounting frame, and the front and rear side walls of the mounting frame are rotatably connected to two baffles abutting against the seed crystal.

[0010] Preferably, the temperature control system comprises a heat insulation ring arranged between the kettle body and the reaction furnace body, the heat insulation ring is opposite to the annular support plate, a first heating body for heating the first reaction cavity is arranged above the heat insulation ring, a second heating body for heating the second reaction cavity is arranged below the heat insulation ring, the first cooling cavity is formed between the kettle cover and the connecting plate, the first cooling cavity is cooled by a first cooling pipeline, the second cooling cavity is formed between the reaction furnace body and the inner bottom of the kettle body, and the second cooling cavity is cooled by a second cooling pipeline.

[0011] Preferably, the gas pressure adjusting system comprises two gas boosters installed on the front side wall of the kettle body, and the two gas boosters are respectively connected to the first reaction cavity and the second reaction cavity through pipelines.

[0012] Compared with the prior art, the utility model has the advantages that:

[0013] The reaction furnace body is divided into the first reaction cavity and the second reaction cavity by the partition plate, the temperature of the reaction furnace body is controlled in different temperature ranges, there is a temperature difference, the ammonia solvent in the reaction furnace body is in a subcritical / supercritical state, and a convection flow is generated between the first reaction cavity and the second reaction cavity, so that the gallium nitride seed crystal in the second reaction cavity continuously grows, after the reaction is completed, the threaded rod is screwed to be separated from the inner threaded ring, the baffle is rotated to no longer abut against the seed crystal, and the seed crystal is taken out from the mounting frame, and the operation is simple and convenient. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 An external structure schematic view of a large-specification gallium nitride single crystal product generating device is provided for the utility model;

[0015] Figure 2 An internal three-dimensional structure schematic view of a large-specification gallium nitride single crystal product generating device is provided for the utility model;

[0016] Figure 3The utility model provides a big specification gallium nitride single crystal product's generation device's internal plane structure schematic diagram is shown in the figure.

[0017] Figure 4 For Figure 3 The structure of A in the middle is enlarged.

[0018] Figure 5 It is the connection schematic drawing of reaction furnace body, heat insulation ring, first heating body and second heating body.

[0019] In the figure: 1, kettle body; 2, kettle cover; 3, reaction furnace body; 4, annular support plate; 5, partition plate; 6, opening; 7, first reaction cavity; 8, second reaction cavity; 9, gallium nitride raw material; 10, heat insulation ring; 11, first heating body; 12, second heating body; 13, connecting plate; 14, internal thread ring; 15, threaded rod; 16, mounting frame; 17, vertical plate; 18, baffle; 19, seed crystal; 20, connecting flange. DETAILED DESCRIPTION

[0020] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all the embodiments.

[0021] Referring to Figures 1-5 A gallium nitride single crystal product generation device, comprising a reaction kettle and a reaction furnace body 3 arranged in the reaction kettle, the reaction kettle comprises a kettle body 1 and a kettle cover 2 connected detachably, the side walls of the kettle body 1 and the kettle cover 2 are each provided with a connecting flange 20, the two connecting flanges 20 are locked by bolts, so that the kettle cover 2 can be installed and dismounted with the kettle body 1.

[0022] The reaction furnace body 3 is divided into a first reaction cavity 7 and a second reaction cavity 8 by a partition piece, the first reaction cavity 7 is a dissolving zone, the second reaction cavity 8 is a crystallization zone, the partition piece is used for transferring ionized intermediate complex from the first reaction cavity 7 to the second reaction cavity 8, the partition piece comprises an annular support plate 4 fixedly connected to the inner side wall of the reaction furnace body 3, a partition plate 5 is installed above the annular support plate 4, a plurality of openings 6 are installed through the partition plate 5, the partition plate 5 and the openings 6 make the ammonia solvent produce convection flow between the first reaction cavity 7 and the second reaction cavity 8, so as to promote the gallium nitride seed crystal 19 in the second reaction cavity 8 to grow continuously;

[0023] The first reaction cavity 7 is used for dissolving gallium nitride raw materials 9 to form ionized intermediate compounds. The bottom of the cover 2 is provided with a connecting plate 13. The bottom of the connecting plate 13 is connected with a plurality of seed crystals 19 extending into the second reaction cavity 8 through a plurality of connecting members. The connecting members include an inner threaded ring 14 arranged at the bottom of the connecting plate 13. A plurality of mounting frames 16 are arranged below the connecting plate 13 from top to bottom. Two adjacent mounting frames 16 are connected through a vertical plate 17. The upper end of the uppermost mounting frame 16 is fixedly connected with a threaded rod 15 extending into the corresponding inner threaded ring 14. The vertical plate 17 can connect the plurality of mounting frames 16 and make the plurality of mounting frames 16 have a spacing, which is beneficial to the growth of the seed crystal 19. The threaded rod 15 is connected with the inner threaded ring 14, which can facilitate the mounting of the plurality of mounting frames 16 on the connecting plate 13 and placing them in the second reaction cavity 8 or taking them off from the connecting plate 13. The seed crystal 19 is placed in the corresponding mounting frame 16. The front and rear sidewalls of the mounting frame 16 are rotatably connected with at least two baffles 18 abutting against the seed crystal 19. Rotating the baffle 18 can fix the seed crystal 19 when the baffle 18 is opposite to the seed crystal 19. Rotating the baffle 18 can take out the seed crystal 19 when the baffle 18 is not opposite to the seed crystal 19, thereby facilitating the taking and placing of the seed crystal 19;

[0024] A temperature control system for heating the first reaction cavity 7 and the second reaction cavity 8 is arranged between the reaction kettle and the reaction furnace body 3. A gas pressure adjusting system for providing the pressure in the reaction cavity is arranged on the reaction kettle.

[0025] The temperature control system includes a heat insulation ring 10 arranged between the kettle body 1 and the reaction furnace body 3. The heat insulation ring 10 is opposite to the annular support plate 4. The heat insulation ring 10 and the annular support plate 4 cooperate to form the first reaction cavity 7 and the second reaction cavity 8 in the reaction furnace body 3, thereby generating a stepwise temperature difference suitable for the ammonia thermal method for generating gallium nitride single crystal products.

[0026] A first heating body 11 for heating the first reaction cavity 7 is arranged above the heat insulation ring 10. A second heating body 12 for heating the second reaction cavity 8 is arranged below the heat insulation ring 10. The heating power input of the first heating body 11 and the second heating body 12 is controlled respectively. The heat insulation ring 10 is made of a heat insulation material with a small heat transfer coefficient and has a suitable width, thereby ensuring that the first reaction cavity 7 and the second reaction cavity 8 in the reaction furnace body 3 generate a stepwise temperature difference. A first cooling cavity is formed between the cover 2 and the connecting plate 13. The first cooling cavity is cooled through a first cooling pipeline. A second cooling cavity is formed between the reaction furnace body 3 and the inner bottom of the kettle body 1. The second cooling cavity is cooled through a second cooling pipeline. The first cooling pipeline and the second cooling pipeline circulate the cooling medium in a water tank (not shown in the figure) through a cooling water pump, thereby circulating the first cooling cavity and the second cooling cavity, cooling the kettle body 1 and the cover 2, and ensuring the safety and service life of the equipment. The cooling pipeline and the cooling water pump are prior art and will not be described in detail here.

[0027] The gas pressure regulating system comprises two gas boosters installed on the front sidewall of the kettle body 1, which are respectively connected with the first reaction cavity 7 and the second reaction cavity 8 through pipelines, and the gas boosters pressurize the reaction furnace body 3 through the pipelines, and the pressurizing medium of the gas boosters is non-reactive gas or inert gas.

[0028] The feed pipe and the discharge pipe which are connected with the first reaction cavity 7 are installed through the kettle body 1, and the control panel is installed on the front sidewall of the kettle body 1 and electrically connected with the first heating body 11, the second heating body 12, the cooling water pump, the gas booster and the pressure sensor, so that the control panel can be controlled.

[0029] The function principle of the utility model can be described as follows:

[0030] In the utility model, when the device for generating large-specification gallium nitride single crystal products works, the partition plate 5 is placed in the reaction furnace body 3, the reaction furnace body 3 is divided into the first reaction cavity 7 and the second reaction cavity 8, the seed crystal 19 is placed in the mounting frame 16, the baffle 18 is rotated to abut against the seed crystal 19, the seed crystal 19 is stably fixed on the mounting frame 16, and the threaded rod 15 is screwed onto the internal thread ring 14, so that the plurality of seed crystals 19 can be installed below the connecting plate 13.

[0031] The gallium nitride raw material 9 is placed in the first reaction cavity 7, and the mineralizer is placed, the kettle cover 2 is installed on the kettle body 1 to close the kettle body 1, the seed crystal 19 is located in the second reaction cavity 8, the ammonia solvent is filled into the reaction furnace body 3 after vacuumizing, the first reaction cavity 7 and the second reaction cavity 8 are heated by the first heating body 11 and the second heating body 12 respectively, the first temperature and the second temperature are provided for the first reaction cavity 7 and the second reaction cavity 8 respectively, so that a temperature difference exists, the ammonia solvent in the reaction furnace body 3 is in a subcritical / supercritical state under the first temperature and the second temperature, and a convection flow is generated between the first reaction cavity 7 and the second reaction cavity 8, so as to continuously grow the gallium nitride seed crystal 19 in the second reaction cavity 8.

[0032] When the gallium nitride single crystal growth is completed, the kettle cover 2 and the kettle body 1 are separated, the connecting plate 13 moves upward, the seed crystal 19 moves out of the kettle body 1, the threaded rod 15 is separated from the internal thread ring 14 by screwing, the baffle 18 is rotated to no longer abut against the seed crystal 19, the seed crystal 19 can be taken out from the mounting frame 16, the operation is simple, the gallium nitride single crystal is taken out, and the reaction furnace body 3 is cleaned and dried.

[0033] The above merely describes a preferred embodiment of the present application, and the protection scope of the present application is not limited thereto, and any skilled person in the art, according to the technical scheme and the inventive concept of the present application, makes equivalent replacement or change within the technical range disclosed by the present application, which should be covered within the protection scope of the present application.

Claims

1. An apparatus for producing a large-size gallium nitride single crystal product, comprising a reaction vessel and a reaction furnace body (3) disposed in the reaction vessel, characterized in that, The reaction kettle comprises a detachable kettle body (1) and kettle cover (2), the reaction furnace body (3) is divided into first reaction cavity (7) and second reaction cavity (8) by partition, the first reaction cavity (7) is used for dissolving gallium nitride raw material (9) to form ionized intermediate compound, the bottom of the kettle cover (2) is provided with connecting plate (13), the bottom of the connecting plate (13) is connected with multiple seeds (19) extending into the second reaction cavity (8) through multiple connecting pieces, for generating gallium nitride single crystal, the partition is used for transferring ionized intermediate compound from the first reaction cavity (7) to the second reaction cavity (8), the temperature control system for heating the first reaction cavity (7) and the second reaction cavity (8) is arranged between the reaction kettle and the reaction furnace body (3), and the gas pressure adjusting system for providing the pressure in the reaction cavity is arranged on the reaction kettle.

2. The apparatus of claim 1, wherein The side walls of the kettle body (1) and the kettle cover (2) are provided with connecting flanges (20), and the two connecting flanges (20) are locked by bolts.

3. The apparatus of claim 1, wherein the apparatus further comprises a growth chamber for growing the large-size GaN single crystal ingot. The partition comprises an annular support plate (4) fixedly connected to the inner side wall of the reaction furnace body (3), a partition plate (5) is installed above the annular support plate (4), and multiple openings (6) are installed through the partition plate (5).

4. The apparatus of claim 1, wherein the apparatus further comprises a growth chamber. The connecting piece comprises an internal thread ring (14) arranged at the bottom of the connecting plate (13), multiple mounting frames (16) are arranged below the connecting plate (13) from top to bottom, two mounting frames (16) adjacent to each other are connected through a vertical plate (17), a threaded rod (15) extending into the corresponding internal thread ring (14) is fixedly connected to the upper end of the uppermost mounting frame (16), the seed (19) is placed in the corresponding mounting frame (16), and the front and rear side walls of the mounting frame (16) are rotatably connected with two baffles (18) abutting against the seed (19).

5. The apparatus of claim 3, wherein the apparatus further comprises a heating means for heating the substrate and the source material. The temperature control system comprises a heat insulation ring (10) arranged between the kettle body (1) and the reaction furnace body (3), the heat insulation ring (10) is opposite to the annular support plate (4), a first heating body (11) for heating the first reaction cavity (7) is arranged above the heat insulation ring (10), a second heating body (12) for heating the second reaction cavity (8) is arranged below the heat insulation ring (10), a first cooling cavity is formed between the kettle cover (2) and the connecting plate (13), the first cooling cavity is cooled through a first cooling pipeline, a second cooling cavity is formed between the reaction furnace body (3) and the inner bottom of the kettle body (1), and the second cooling cavity is cooled through a second cooling pipeline.

6. The apparatus of claim 1, wherein the apparatus is configured to produce a large- size gallium nitride single crystal article. The gas pressure adjusting system comprises two gas boosters installed on the front side wall of the kettle body (1), and the two gas boosters are respectively connected with the first reaction cavity (7) and the second reaction cavity (8) through pipelines.

Images