Spraying device of semiconductor processing equipment

Abstract

The utility model discloses a spraying device of semiconductor processing equipment, which comprises a substrate provided with a plurality of spraying holes used for spraying gas to process wafers; the cleaning film is arranged on the end face of the base plate, and cleaning holes corresponding to the spraying holes are formed in the cleaning film; one surface of the cleaning film is a connecting surface, and the other surface is an adhering surface; the connecting surface is used for connecting the cleaning film with the substrate, and the adhering surface is used for adhering byproducts generated by wafer processing. According to the utility model, by-products generated in the reaction process cannot damage the surface of the spraying head or cannot be adhered to the surface of the spraying head.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor processing equipment, especially to a kind of spraying device of semiconductor processing equipment. BACKGROUND

[0002] In the processing of wafer, dry etching technology is used fluorine-based chemical gas, through radio frequency dissociation into plasma, then with wafer reaction etching groove, hole and other shapes, by-product will be generated in the reaction process, if the by-product generated is not taken away, it will continue to accumulate, and the by-product generated may finally adhere to the surface of the spraying device and cause damage.

[0003] In the prior art, the spray head in the spraying device is directly exposed in the reaction cavity, so the by-products generated during the reaction process will directly act on the surface of the spray head, adhere to the surface of the spray head and cause damage to the surface of the spray head, which is not convenient to clean and also affects the service life of the spray head.

[0004] Therefore, it is necessary to provide a new spraying device of semiconductor processing equipment to solve the above problems existing in the prior art. UTILITY MODEL CONTENT

[0005] The utility model aims at providing a kind of spraying device of semiconductor processing equipment, to spray gas in the processing of wafer, can make the by-products generated during the reaction process not damage the surface of the spray head or adhere to the surface of the spray head.

[0006] To achieve the above-mentioned purpose, the technical scheme of the utility model is as follows:

[0007] A kind of spraying device of semiconductor processing equipment, comprising:

[0008] Substrate, open multiple spray holes, the spray hole is used to spray gas to process wafer;

[0009] Cleaning film, set in the substrate end face, the cleaning film is opened with the cleaning hole corresponding to the spray hole;

[0010] One side of the cleaning film is a connecting surface, and the other side is an adhering surface; the connecting surface is used to connect the cleaning film with the substrate, and the adhering surface is used to adhere to the by-products generated during wafer processing.

[0011] By adopting the above technical scheme, the cleaning film is arranged on the substrate, the cleaning film covers the substrate, the by-products generated during wafer processing adhere to the adhering surface of the cleaning film, and the substrate is not damaged or adhered to the substrate, when cleaning the by-products, the cleaning film is torn off, and the cleaning process is simple.

[0012] Optionally, a direction away from the substrate along an axis of the ejection hole is defined as an installation direction, the cleaning film is provided with N, the N cleaning films are connected in sequence along the installation direction; the connecting surface of the first cleaning film along the installation direction is used to connect with the substrate, and the adhering surface of the Nth cleaning film is used to adhere to by-products generated in wafer processing.

[0013] By adopting the above technical scheme, the cleaning film is provided with N, and the N cleaning films are connected in sequence along the installation direction. In the cleaning process, when the outermost cleaning film reaches the service life, the Nth cleaning film along the installation direction reaches the service life, and is removed. After removal, the substrate still has a plurality of cleaning films, and it is not necessary to lay the cleaning film again after tearing off the cleaning film each time. The cleaning process is convenient, and the cleaning efficiency is high.

[0014] Optionally, the adhesion of the plurality of connecting surfaces decreases in sequence along the installation direction.

[0015] By adopting the above technical scheme, the adhesion of the plurality of connecting surfaces decreases in sequence along the installation direction. In actual use, when the outermost cleaning film is removed, the adjacent cleaning film will not be interfered, so that the possibility that the adjacent cleaning film is also torn off when the outermost cleaning film is removed is reduced, and the convenience of the cleaning process is improved.

[0016] Optionally, the positions of the cleaning holes on the adjacent two cleaning films correspond, and the diameters of the cleaning holes are the same.

[0017] By adopting the above technical scheme, the positions of the cleaning holes on the adjacent two cleaning films correspond, and the gas ejected from the ejection hole can sequentially pass through the cleaning holes of each cleaning film and then contact the wafer, so that the cleaning film will not block the ejection hole, and the wafer processing process is facilitated.

[0018] Optionally, the thickness of each cleaning film ranges from 0.5 mm to 3 mm.

[0019] By adopting the above technical scheme, the thickness of each cleaning film ranges from 0.5 mm to 3 mm. Within this range, the by-products generated in wafer processing will not penetrate the cleaning film, so that the service life of the cleaning film is improved.

[0020] Optionally, the substrate is detachably provided with an anti-falling piece, one end of the anti-falling piece is connected with the substrate, and the other end abuts against the end surface of the cleaning film.

[0021] By adopting the technical scheme, one end of the anti-disengagement piece is connected with the base plate, and the other end is abutted against the end surface of the cleaning film, so that the possibility of the cleaning film being disengaged from the base plate under the influence of the self weight or the gas sprayed from the gas injection hole is reduced, and the interference with the wafer processing process is reduced.

[0022] Optionally, the side wall of the cleaning film is provided with a tear-off piece, and the tear-off pieces of the side walls of two adjacent cleaning films are arranged in a staggered manner.

[0023] By adopting the technical scheme, in the process of removing the outermost cleaning film, the tear-off piece is driven to move, so that the cleaning film is removed, and the tear-off pieces on the adjacent two cleaning films are arranged in a staggered manner, that is, the adjacent two tear-off pieces do not overlap, so that the tear-off piece is driven to move.

[0024] Optionally, a plurality of tear-off pieces are arranged, and the plurality of tear-off pieces are uniformly distributed around the side wall of the cleaning film on each cleaning film.

[0025] By adopting the technical scheme, a plurality of tear-off pieces are arranged, and in the process of removing the cleaning film, the relatively arranged tear-off pieces can be controlled, so that the possibility of damage caused by the tearing of the cleaning film under the condition of controlling only one tear-off piece is reduced.

[0026] A semiconductor processing equipment includes a cavity, a gas supply device and a spraying device;

[0027] The base plate and the cleaning film are arranged in the cavity;

[0028] Part of the gas supply device is arranged outside the cavity, and the other part is arranged inside the cavity and communicates with the injection hole;

[0029] In the working state, the gas supply device supplies gas, and the gas enters the cavity and contacts the wafer through the injection hole.

[0030] By adopting the technical scheme, the gas supply device provides gas, and the gas enters the cavity after passing through the injection hole and contacts the wafer, so that the wafer processing process is facilitated.

[0031] Optionally, it further includes a supporting table, and the supporting table is arranged in the cavity and is arranged opposite to the base plate;

[0032] In the working state, the wafer is placed on the supporting table, and the gas contacts the wafer after sequentially passing through the injection hole and the cleaning hole.

[0033] By adopting the technical scheme, the supporting table is used for placing the wafer, and the supporting table is arranged opposite to the base plate, so that the gas sprayed from the injection hole on the base plate can be uniformly sprayed on the wafer, and the wafer processing process is facilitated.

[0034] The spraying device of the semiconductor processing equipment has at least the following beneficial effects:

[0035] 1. Byproducts generated in wafer processing are attached to the attachment surface of the cleaning film, without damaging the substrate or being attached to the substrate, and the cleaning film can be torn off when the byproducts are cleaned, so that the cleaning process is simple;

[0036] 2. The cleaning film is provided with N layers, and after the outermost cleaning film reaching the service life is removed, a plurality of cleaning films are still provided on the substrate, so that the cleaning film does not need to be re-laid after being torn off each time, the cleaning process is convenient, and the cleaning efficiency is high;

[0037] 3. The adhesion of the plurality of connecting surfaces decreases in the mounting direction in turn, and when the outermost cleaning film is removed, the adjacent cleaning film is not interfered. BRIEF DESCRIPTION OF DRAWINGS

[0038] Figure 1 It is a main body structure schematic view of the spraying device of the semiconductor processing equipment of the embodiment of the utility model;

[0039] Figure 2 It is a main body structure explosion view and the direction schematic view of the connecting surface of the spraying device of the semiconductor processing equipment of the embodiment of the utility model;

[0040] Figure 3 It is a main body structure explosion view and the direction schematic view of the attachment surface of the spraying device of the semiconductor processing equipment of the embodiment of the utility model;

[0041] Figure 4 It is a tearing and pulling piece position schematic view of the spraying device of the semiconductor processing equipment of the embodiment of the utility model;

[0042] Figure 5 It is a distribution position schematic view of the bearing table and the substrate in the cavity of the spraying device of the semiconductor processing equipment of the embodiment of the utility model.

[0043] REFERENCE SIGNS:

[0044] 100, substrate; 110, spray hole; 200, cleaning film; 210, cleaning hole; 220, connecting surface; 230, attachment surface; 240, tearing and pulling piece; 300, anti-dropping piece; 400, cavity; 410, bearing table; 500, gas supply device. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor belong to the protection scope of the utility model. Unless otherwise defined, the technical terms or scientific terms used herein should be understood as the usual meaning understood by those skilled in the art. The "including" and similar words used in this paper mean that the elements or objects before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0046] In the prior art, the spray head in the spraying device is directly exposed inside the reaction cavity, so that the by-products generated in the reaction process will directly act on the surface of the spray head, adhere to the surface of the spray head and cause damage to the surface of the spray head, which is inconvenient to clean and also affects the service life of the spray head.

[0047] In order to solve the above technical problems, a spraying device of a semiconductor processing equipment is provided.

[0048] The specific embodiments of the utility model will be further described in detail below with reference to the drawings.

[0049] With reference to Figures 1-5 The embodiments of the utility model provide a spraying device of a semiconductor processing equipment. The spraying device is used for the semiconductor processing equipment. In the processing process of the wafer, the gas is sprayed from the spraying device and contacts the wafer, so that the wafer is processed. The spraying device comprises a substrate 100. The substrate 100 is fixedly arranged at the top of the reaction cavity of the semiconductor processing equipment. Meanwhile, the substrate 100 is provided with spray holes 110. A plurality of spray holes 110 are arranged on the substrate 100. The plurality of spray holes 110 are uniformly distributed on the substrate 100. The gas is sprayed into the reaction cavity through the spray holes 110. Therefore, the spray holes 110 on the substrate 100 are used for spraying the gas, so as to process the wafer.

[0050] With reference to Figures 1-5The substrate 100 is provided with a cleaning film 200, one side of the cleaning film 200 is a connecting surface 220, and the other side is an adhering surface 230. The connecting surface 220 has viscosity, and is used to fix the position of the cleaning film 200. The cleaning film 200 can be provided with one or multiple. When the cleaning film 200 is provided with one, the connecting surface 220 of the cleaning film 200 is connected with the end surface of the substrate 100, and the adhering surface 230 is exposed to the inside of the reaction cavity, and is used to adhere to the by-products generated in the processing of the wafer. When the cleaning film 200 is provided with multiple, assuming that the cleaning film 200 is provided with N, the direction away from the substrate 100 along the axis direction of the spray hole 110 is defined as the installation direction, and the N cleaning films 200 are connected in sequence along the installation direction, wherein the connecting surface 220 and the adhering surface 230 of the adjacent two cleaning films 200 are bonded. In addition, the connecting surface 220 of the first cleaning film 200 along the installation direction is bonded with the end surface of the substrate 100, and is used to fix and position the cleaning film 200. The adhering surface 230 of the Nth cleaning film 200 along the installation direction is exposed to the inside of the reaction cavity, and is used to adhere to the by-products generated in the processing of the wafer. In this embodiment, the cleaning film 200 is preferably provided with multiple. In addition, the cleaning film 200 needs to be the same shape as the substrate 100, or the area of the cleaning film 200 is greater than the area of the substrate 100, so that the cleaning film 200 can completely cover the substrate 100, thereby reducing the possibility of the by-products generated in the processing of the wafer adhering to the substrate 100.

[0051] With reference to Figures 1-5The cleaning film 200 is also provided with cleaning holes 210 penetrating the cleaning film 200 along the thickness direction of the cleaning film 200. The cleaning holes 210 are provided in plurality and the positions of the plurality of cleaning holes 210 correspond to the positions of the plurality of ejection holes 110 one by one, so that the gas ejected from the ejection hole 110 can enter the reaction cavity after passing through the cleaning hole 210. Meanwhile, the diameters of the cleaning holes 210 on each cleaning film 200 are the same, and the positions of the plurality of cleaning holes 210 of the adjacent two cleaning films 200 correspond to each other, facilitating the gas to pass through the plurality of cleaning films 200. In addition, the diameters of the cleaning holes 210 can be the same as, smaller than, or larger than the diameters of the ejection holes 110, as long as the gas can be ejected into the reaction cavity. In this embodiment, the diameters of the cleaning holes 210 are preferably the same as the diameters of the ejection holes 110. In addition, the cleaning film 200 is required to have a certain thickness, which can be selected from the range of 0.5-3 mm, and can be 0.5 mm or 3 mm, or any value within the range, such as 1 mm, 1.5 mm, 2 mm, or 2.5 mm. In actual use, different thicknesses of the cleaning film 200 can be selected according to the actual use conditions or requirements, as long as the by-products generated during the wafer processing cannot penetrate the cleaning film 200 to damage or adhere to the substrate 100.

[0052] Referring to Figures 1-5 When the plurality of cleaning films 200 are provided, the adhesion of the connecting surfaces 220 of the plurality of cleaning films 200 decreases in sequence along the mounting direction. During use, when the outermost adhering surface 230 is exposed, the cleaning film 200 reaches the service life, and the cleaning film 200 reaching the service life is torn off. Since the adhesion of the connecting surfaces 220 of the plurality of cleaning films 200 decreases in sequence along the mounting direction, the tearing off of the cleaning film 200 will not affect the next layer of cleaning film 200. Here, the reaching of the service life means that the cleaning film 200 is damaged, or the adhering surface 230 of the cleaning film 200 cannot adhere to the by-products generated during the wafer processing, or other conditions that cause the cleaning film 200 to be unable to use. In this way, the cleaning film 200 can be replaced conveniently.

[0053] Referring to Figures 1-5The anti-falling piece 300 can also be arranged on the substrate 100, and the anti-falling piece 300 is detachably connected with the substrate 100. Since the cleaning film 200 is arranged on the substrate 100, and during the working process, the cleaning film 200 is arranged below the substrate 100, and the cleaning film 200 is also affected by its own gravity and gas thrust, which may cause the cleaning film 200 to fall off. Therefore, it is necessary to arrange the anti-falling piece 300 to reduce the possibility of the cleaning film 200 falling off from the substrate 100. In the embodiment, the anti-falling piece 300 is in a strip shape, specifically, the anti-falling piece 300 is in a “C” shape, one end of the anti-falling piece 300 is connected with the substrate 100, and the connection mode can be clamping, lapping or bolt fixing, etc. In the embodiment, the anti-falling piece 300 is preferentially arranged on the end surface of the substrate 100 by bolt fixing, so that the anti-falling piece 300 is detachably connected with the substrate 100. It is worth noting that the end surface of the anti-falling piece 300 is connected with the substrate 100 away from the cleaning film 200, or the sidewall of the substrate 100, as long as it does not interfere with the position of the cleaning film 200. The other end of the anti-falling piece 300 abuts against the end surface of the cleaning film 200, thereby reducing the possibility of the cleaning film 200 falling off from the substrate 100. The anti-falling piece 300 can be arranged with one or multiple. When the anti-falling piece 300 is arranged with multiple, the multiple anti-falling pieces 300 are uniformly distributed around the sidewall of the substrate 100. In addition, the anti-falling piece 300 can also be arranged as an extendable piece according to the actual use, so that it can adapt to the total thickness of multiple cleaning films 200 according to the continuous reduction of the number of the cleaning films 200. Specifically, the anti-falling piece 300 is divided into two sections, which are a first section and a second section. The first section is connected with the substrate 100, and the end of the first section is provided with an extension hole. One end of the second section is arranged in the extension hole, and the other end abuts against the end surface of the cleaning film 200. A spring is arranged in the extension hole, one end of the spring is fixedly arranged on the inner bottom of the extension hole, and the other end is fixedly arranged on the one end of the second section arranged in the extension hole. The spring is used to pull the second section to move towards the first section, so that the anti-falling piece 300 has the adaptive ability.

[0054] With reference to Figures 1-5The side wall of the cleaning film 200 is provided with a tear tab 240, which can be fixed or detachable, and in the embodiment, the tear tab 240 is fixed to the side wall of the cleaning film 200 by the fixed mode, and the fixed mode can be adhesion, clamping or integral molding, and in the embodiment, the tear tab 240 is fixed to the side wall of the cleaning film 200 by the integral molding mode. In the use process, since the shape and size of each cleaning film 200 are the same, it is inconvenient to tear off, and after the tear tab 240 is provided, the tear tab 240 is driven to move, so that the adjacent two cleaning films 200 are separated, and the cleaning film 200 is conveniently torn off. The side wall of each cleaning film 200 can be provided with one or more tear tabs 240. When the side wall of each cleaning film 200 is provided with one tear tab 240, the tear tabs 240 on the side walls of the adjacent two cleaning films 200 are staggered, so that the two tear tabs 240 adjacent in the mounting direction are not overlapped, thereby reducing the possibility that the adjacent two tear tabs 240 are not easily separated.

[0055] The embodiment of the utility model provides a kind of semiconductor processing equipment, and semiconductor processing setting includes cavity 400, gas supply device 500, bearing table 410 and spraying device, wherein cavity 400 is reaction cavity, bearing table 410 is placed in the bottom inside cavity 400, for placing wafer, spraying device is placed in the top inside cavity 400, for spraying gas, part of gas supply device 500 is placed outside cavity 400, another part is placed inside cavity 400, and is communicated with spray hole 110, in the processing process of wafer, gas supply device 500 is used to provide gas, so that gas is sprayed from spray hole 110, and sprayed to cavity 400 and wafer contact, and wafer is processed;In working condition, wafer is placed on bearing table 410, and gas supply device 500 provides gas, and gas is sprayed into cavity 400 after passing through spray hole 110 and cleaning hole 210 in sequence, and contacts wafer;Multiple cleaning films 200 are provided on substrate 100, and by-product generated in the processing process is attached to the attachment surface 230 of cleaning film 200, and substrate 100 is not damaged.

[0056] The utility model discloses a kind of implementation principles of spray device of semiconductor processing equipment, multiple layer cleaning film 200 is arranged at the end surface of substrate 100, by-product generated in the processing process of wafer is adhered on the adhering surface 230 of cleaning film 200, will not damage or adhere on substrate 100, so it is not necessary to clean the end surface of substrate 100, when cleaning, just tear the outermost cleaning film 200, simultaneously, since the viscosity of connecting surface 220 decreases in turn along the installation direction, when tearing the outermost cleaning film 200, it will not affect the cleaning film 200 adjacent thereto, facilitate the progress of cleaning process.

[0057] Although the embodiments of the present application have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to the embodiments. However, it should be understood that such modifications and changes are within the scope and spirit of the present application as described in the claims. Moreover, the present application described herein can have other embodiments and be implemented or realized in various ways.

Claims

1. A spraying device of a semiconductor processing apparatus, characterized by, The utility model relates to a kind of spray device and the cavity for being used for wafer processing, comprising: Substrate (100) is opened with multiple spray holes (110), and the spray hole (110) is used to spray gas to process wafer sheet; Cleaning film (200) is arranged on the end surface of the substrate (100), and the cleaning film (200) is opened with cleaning hole (210) corresponding to the spray hole (110); One side of the cleaning film (200) is connecting surface (220), and the other side is adhering surface (230);The connecting surface (220) is used to connect the cleaning film (200) with the substrate (100), and the adhering surface (230) is used to adhere byproduct generated in wafer processing.

2. The spray device of claim 1, wherein, The direction away from the substrate (100) along the axis of the spray hole (110) is defined as the mounting direction, and the cleaning film (200) is provided with N, and the N cleaning film (200) is sequentially connected along the mounting direction;The connecting surface (220) of the first cleaning film (200) along the mounting direction is used to connect with the substrate (100), and the adhering surface (230) of the N cleaning film (200) is used to adhere byproduct generated in wafer processing.

3. The spray device of claim 2, wherein, The adhesion of multiple connecting surfaces (220) decreases sequentially along the mounting direction.

4. The spray device of claim 2, wherein, The positions of the cleaning holes (210) on the adjacent two cleaning films (200) correspond, and the diameters of the cleaning holes (210) are the same.

5. The spray device of claim 2, wherein, The thickness of each cleaning film (200) ranges from 0.5 to 3 mm.

6. The spray device of any one of claims 1-5, wherein, The substrate (100) is detachably provided with a anti-drop piece (300), one end of the anti-drop piece (300) is connected with the substrate (100), and the other end is abutted with the end surface of the cleaning film (200).

7. The spray device of any one of claims 1-5, wherein, The side wall of the cleaning film (200) is provided with a tear-off piece (240), and the tear-off pieces (240) on the side walls of the adjacent two cleaning films (200) are staggered.

8. The spray device of claim 7, wherein, The tear-off piece (240) is provided with multiple, and multiple tear-off pieces (240) are uniformly distributed around the side wall of the cleaning film (200) on each cleaning film (200).

9. A semiconductor processing apparatus, characterized by comprising: It comprises a cavity (400), a gas supply device (500) and the spray device of any one of claims 1-8; The substrate (100) and the cleaning film (200) are arranged inside the cavity (400); Part of the gas supply device (500) is arranged outside the cavity (400), and the other part is arranged inside the cavity (400) and communicates with the spray hole (110); In the working state, the gas supply device (500) supplies gas, and the gas enters the cavity (400) and contacts the wafer through the spray hole (110).

10. The semiconductor processing apparatus of claim 9, wherein It also includes a bearing table (410), which is arranged inside the cavity (400) and opposite to the substrate (100); In the working state, the wafer is placed on the bearing table (410), and the gas contacts the wafer after sequentially passing through the spray hole (110) and the cleaning hole (210).

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