Ferroelectric metasurface terahertz modulator based on AlScN film

Abstract

The ferroelectric metasurface terahertz modulator based on the AlScN film comprises a substrate layer, a ferroelectric layer and a metal layer which are sequentially arranged from bottom to top, the ferroelectric layer adopts the AlScN film, the thickness of the ferroelectric layer is 0.15 mu m, the metal layer adopts platinum metal, and platinum electrodes are etched on the upper portion and the lower portion of a metal structure of the metal layer. The utility model provides a ferroelectric metasurface terahertz modulator based on an AlScN film, the ferroelectric metasurface of the AlScN film has the characteristic of dynamic adjustability, and the complex dielectric constant of the ferroelectric metasurface can be changed by applying current on an electrode, so that the structural resistance change is realized, and the transmission resonance of terahertz waves is changed. The metal structure layer is constructed on the AlScN thin film, and current is applied through the electrode to modulate the dielectric constant, so that the terahertz wave transmission dynamic modulation capability is realized, good dynamic adjustable characteristic and stability are realized, and the requirements of a modern ferroelectric terahertz photonic device on flexibility and high performance are met.

Description

TECHNICAL FIELD

[0001] The utility model relates to information technology field, concretely relates to a kind of ferroelectric hypersurface terahertz modulator based on AlScN film. BACKGROUND

[0002] With the rapid development of terahertz technology, its application in the field of communication, imaging, sensing and so on is increasingly widespread. However, as the key link of terahertz technology, the modulation of terahertz wave still faces many challenges. Traditional terahertz modulators are mostly based on semiconductor materials or optical effects, and have problems such as slow modulation speed, limited modulation depth, poor working stability and the like SUMMARY

[0003] The utility model aims at providing a kind of ferroelectric hypersurface terahertz modulator based on AlScN film to solve the above problems.

[0004] To achieve the above object, the utility model adopts the following technical solutions:

[0005] A kind of ferroelectric hypersurface terahertz modulator based on AlScN film, including substrate layer, ferroelectric layer and metal layer sequentially arranged from bottom to top, the ferroelectric layer adopts AlScN film, its thickness is 0.15 μm, the metal layer adopts platinum metal, and the metal structure of the metal layer is etched with platinum electrode on and below.

[0006] Preferably, the substrate layer adopts silicon substrate, and its thickness is 500 μm.

[0007] Preferably, the thickness of the metal layer is 0.20 μm.

[0008] Preferably, the AlScN film is deposited by magnetron sputtering growth.

[0009] Preferably, the metal layer is patterned by photolithography to form.

[0010] After adopting the above technical scheme, the utility model has the following advantages compared with the background art:

[0011] The utility model provides a kind of ferroelectric hypersurface terahertz modulator based on AlScN film, and the ferroelectric hypersurface of AlScN film has the characteristics of dynamic adjustable, can change its complex dielectric constant by applying current on electrode, so as to realize structural resistance change, change transmission resonance to terahertz wave. The ability of terahertz wave transmission is realized by constructing metal structure layer on AlScN film and modulating dielectric constant by electrode applying current, has good dynamic adjustable characteristics and stability, meets the demand of modern ferroelectric base terahertz photonic device to flexibility and high performance. BRIEF DESCRIPTION OF DRAWINGS

[0012] Fig. 1 It is the AlScN film deposition state structure schematic diagram of the utility model on silicon substrate;

[0013] Fig. 2 It is the AlScN film deposition state structure schematic diagram of the utility model on silicon substrate;

[0014] Fig. 3 It is the AlScN film deposition state structure schematic diagram of the utility model on silicon substrate; DETAILED DESCRIPTION

[0015] In order to make the purpose, technical scheme and advantage of the utility model more clearly, the following is combined with the embodiment, and the utility model is further described in detail.It should be understood that the specific embodiments described here are only used to explain the utility model, and are not used to limit the utility model.

[0016] In the utility model, it needs to be explained that the terms "up", "down", "left", "right", "vertical", "horizontal", "inner", "outer" and the like are based on the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the utility model and simplify the description, and are not used to indicate or imply that the device or element of the utility model must have a specific orientation, so it cannot be understood as a limitation on the utility model.

[0017] EMBODIMENT

[0018] Please refer to Figs. 1 to 3 As shown in the figure, the utility model discloses a kind of ferroelectric metasurface terahertz modulators based on AlScN film, including substrate layer, ferroelectric layer and metal layer sequentially arranged from bottom to top, ferroelectric layer uses AlScN film, its thickness is 0.15 μm, metal layer uses platinum metal, to ensure good conductivity, and there is platinum electrode on the metal structure of metal layer upper and lower etching.

[0019] Substrate layer uses silicon substrate, and its thickness is 500 μm.The thickness of metal layer is 0.20 μm.Metal layer is formed by photolithography to make platinum metal pattern.

[0020] AlScN film is deposited by magnetron sputtering growth.Based on the ferroelectric metasurface of AlScN film, it can be tested under different current size, and different complex dielectric constant is applied to current.

[0021] Manufacturing process is specifically as follows: depositing on low resistance (0.001-0.005 Ωcm) n type (111) Si substrate.Immerse silicon substrate in HF (5vol%) to remove natural oxide layer;

[0022] The radio frequency power of Al is fixed at 185W, and the Sc target power range is 0-225W. Deposition is carried out under a 60 SCCM pure nitrogen atmosphere, and the working pressure is 0.52P; the sample table is heated to 350 DEG C and rotated at 5r / min to ensure the uniformity of the composition and thickness of the thin film. The AlScN thin film has good ferroelectricity and can be flipped by applying electricity for ferroelectric polarization.

[0023] The silicon substrate has a thickness of 500um, and the deposited thin film has a thickness of 0.15um. The metal layer is patterned and formed into an electrode by photolithography, and the thickness of the metal layer is 0.20um.

[0024] The ferroelectric metasurface of the AlScN thin film prepared by the scheme can be widely applied to:

[0025] Terahertz modulator: as a dynamic terahertz modulator, the amplitude of the terahertz wave is dynamically controlled, and the amplitude and phase of the terahertz wave are modulated by applying a forward or reverse current.

[0026] Terahertz imaging equipment: used for realizing the amplitude and phase control of terahertz, and preparing terahertz imaging equipment.

[0027] Terahertz wireless communication: as a core component of terahertz wireless communication, the terahertz signal can be directionally responded.

[0028] The above is only a preferred specific embodiment of the present application, but the protection scope of the present application is not limited to this. Any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the present application, which should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. An AlScN thin film based ferroelectric metasurface terahertz modulator, characterized in that: The application relates to a ferroelectric memory cell, which comprises, from bottom to top, a substrate layer, a ferroelectric layer and a metal layer, wherein the ferroelectric layer is made of an AlScN film with a thickness of 0.15 mu m, the metal layer is made of platinum metal, and the metal structure of the metal layer is etched with platinum electrodes on the upper and lower sides.

2. An AlScN thin film based ferroelectric metasurface terahertz modulator as claimed in claim 1, wherein: The substrate layer is made of a silicon substrate with a thickness of 500 mu m.

3. An AlScN thin film based ferroelectric metasurface terahertz modulator as claimed in claim 1, wherein: The thickness of the metal layer is 0.20 mu m.

4. An AlScN thin film based ferroelectric metasurface terahertz modulator as claimed in claim 1, wherein: The AlScN film is formed by magnetron sputtering growth deposition.

5. An AlScN thin film based ferroelectric metasurface terahertz modulator as claimed in claim 1, wherein: The metal layer is patterned by photolithography to form a platinum metal pattern.

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