Driving power supply, motor control device and vehicle with same

Abstract

The utility model discloses a driving power supply, a motor control device and a vehicle with the same, the driving power supply is used for providing driving voltage for a power semiconductor device, and the driving power supply comprises an input power supply, an inversion module and a planar transformer; the inversion module is coupled to an input power supply and is used for converting input voltage of the input power supply into alternating current; a primary winding of the planar transformer is coupled to the inversion module so as to receive the alternating current output by the inversion module, and the planar transformer is used for performing voltage transformation operation on the alternating current provided by the inversion module and providing driving voltage for the power semiconductor device; the planar transformer is arranged on the PCB substrate group; the PCB substrate group comprises a plurality of layers of PCB substrates, and the primary winding and the secondary winding of the planar transformer are arranged on different PCB substrates. Therefore, through the driving power supply provided by the invention, the problems of poor heat dissipation, low power density, relatively large leakage inductance, poor transformer consistency and easy EMC (Electro Magnetic Compatibility) existing in the existing driving power supply can be solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of power electronics, in particular to a driving power supply, a motor control device and a vehicle having the same. BACKGROUND

[0002] The driving power supply requires high reliability, high power density, high efficiency, low cost, and good electromagnetic compatibility (EMC) performance. However, the currently commonly used driving power supply has poor heat dissipation, low power density, large leakage inductance, and poor transformer consistency, which easily causes EMC problems. CONTENT OF THE UTILITY MODEL

[0003] The present application at least provides a driving power supply, a motor control device and a vehicle having the same to alleviate at least one of the above problems existing in the currently commonly used driving power supply.

[0004] The first aspect of the present application provides a driving power supply for providing a driving voltage for a power semiconductor device, comprising an input power supply, an inverter module and a planar transformer; the inverter module is coupled to the input power supply and is used to convert an input voltage of the input power supply into an alternating current; a primary winding of the planar transformer is coupled to the inverter module to receive the alternating current output by the inverter module, and is used to perform a voltage transformation operation on the alternating current provided by the inverter module to provide a driving voltage for the power semiconductor device; the planar transformer is arranged on a PCB substrate group; the PCB substrate group comprises a plurality of PCB substrates, and the primary winding and the secondary winding of the planar transformer are arranged on different PCB substrates.

[0005] The second aspect of the present application provides a motor control device comprising the above driving power supply.

[0006] The third aspect of the present application provides a vehicle comprising the above motor control device.

[0007] Therefore, the input voltage of the input power supply is converted by the planar transformer to provide a driving voltage for the power semiconductor device. The planar transformer has the advantages of low height, fast heat dissipation, high power density, low leakage inductance, good consistency and excellent EMC performance, and has great advantages in cost. Moreover, by arranging the primary winding and the secondary winding of the planar transformer on different PCB substrates, high and low voltage isolation of the primary and secondary windings is achieved, and safety is improved. Therefore, the driving power supply provided by the present application can alleviate the problems of poor heat dissipation, low power density, large leakage inductance, poor transformer consistency and EMC problems of the existing driving power supply.

[0008] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, but not limiting the present application. BRIEF DESCRIPTION OF DRAWINGS

[0009] The drawings incorporated in and forming a part of the specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the application.

[0010] Figure 1 is a frame schematic diagram of an embodiment of the driving power supply of the present application;

[0011] Figure 2 is a frame schematic diagram of an embodiment of the inverter module of the present application;

[0012] Figure 3 is a circuit structure schematic diagram of an embodiment of the driving power supply of the present application;

[0013] Figure 4 is a circuit structure schematic diagram of another embodiment of the driving power supply of the present application;

[0014] Figure 5 is a circuit structure schematic diagram of still another embodiment of the driving power supply of the present application;

[0015] Figure 6 is a schematic diagram of the primary winding of the planar transformer of the present application;

[0016] Figure 7 is a schematic diagram of the first secondary winding of the planar transformer of the present application;

[0017] Figure 8 is a schematic diagram of the second secondary winding of the planar transformer of the present application;

[0018] Figure 9 is a frame schematic diagram of an embodiment of the motor control device of the present application;

[0019] Figure 10 is a frame schematic diagram of an embodiment of the vehicle provided by the present application. DETAILED DESCRIPTION

[0020] The scheme of the embodiments of the present application will be described in detail below in conjunction with the drawings of the specification.

[0021] In the following description, for the purpose of explanation and not limitation, specific details are set forth, such as particular system configurations, interfaces, techniques, etc., in order to provide a thorough understanding of the present application.

[0022] The term "and / or", merely describes association relationship of associated objects, indicates that there can be three relationships, for example, A and / or B, which can represent: A exists alone, A and B exist together, B exists alone. In addition, the character " / " in this paper generally represents that the front and rear associated objects are a "or" relationship. In addition, "multiple" in this paper means two or more than two. In addition, the term "at least one" in this paper means any one of multiple or any combination of at least two of multiple, for example, including at least one of A, B and C, which can represent including any one or more elements selected from the set consisting of A, B and C.

[0023] Please refer to Figure 1 The driving power supply 100 is used to provide driving voltage for the power semiconductor device 200, including an input power supply 110, an inverter module 120, and a planar transformer 130. The inverter module 120 is coupled to the input power supply 110, and is used to convert the input voltage of the input power supply 110 into alternating current. The primary winding of the planar transformer 130 is coupled to the inverter module 120 to receive the alternating current output by the inverter module 120, and is used to perform a voltage transformation operation on the alternating current provided by the inverter module 120 to provide driving voltage for the power semiconductor device 200. The planar transformer 130 is disposed on a PCB substrate group (not shown in the figure). The PCB substrate group includes a plurality of PCB substrates (not shown in the figure), and the primary winding (not shown in the figure) and the secondary winding (not shown in the figure) of the planar transformer 130 are disposed on different PCB substrates.

[0024] The above scheme converts the input voltage of the input power supply 110 by the planar transformer 130 to provide driving voltage for the power semiconductor device 200. The planar transformer 130 has the advantages of low height, fast heat dissipation, high power density, low leakage inductance, good consistency, and superior EMC performance, and also has great advantages in cost. Moreover, by disposing the primary winding and the secondary winding of the planar transformer 130 on different PCB substrates, high-low voltage isolation of the primary and secondary windings is achieved, and safety is improved.

[0025] In this application, the power semiconductor device 200 can include MOSFET, IGBT, BJT, thyristor and other power semiconductor discrete devices, or include integrated circuits (such as integrated chips, etc.) with MOSFET, IGBT, BJT, thyristor and other power semiconductor discrete devices. Exemplarily, in some embodiments of the present application, the power semiconductor device 200 can include IGBT.

[0026] The existing driving power supply is limited by the number of layers of PCB traces and the requirement of high-voltage insulation, and the transformer usually uses a wound finished transformer. However, the wound finished transformer is high in height, poor in heat dissipation, low in power density, large in leakage inductance, and poor in consistency, which may cause EMC problems. In the present application, the primary winding Np and the secondary winding of the planar transformer 130 are arranged on different PCB substrates to meet the requirement of high-voltage insulation. The planar transformer 130 is designed in the driving power supply 100. The planar transformer 130 is low in height, fast in heat dissipation, high in power density, low in leakage inductance, good in consistency, and superior in EMC performance, and has a great advantage in cost. Therefore, the driving power supply 100 provided in the present application can alleviate the poor heat dissipation, low power density, large leakage inductance, poor consistency of the transformer, and EMC problems of the existing driving power supply.

[0027] In some embodiments, referring to Figure 2 , the inverter module 120 includes a driving chip 121 connected to an inverter circuit (not shown in the figure) for outputting a control signal to at least one switching unit 1211 in the inverter circuit, the control signal being used to control the at least one switching unit 1211 to switch to a conducting or non-conducting state.

[0028] Therefore, by using the driving chip 121, the structure is simple, the number of power tubes used is small, and the voltage stress borne by the switching unit 1211 is reduced.

[0029] The switching unit 1211 in the inverter circuit can include a controllable power semiconductor switch, such as a MOSFET, an IGBT, a triode, etc. The driving chip 121 is connected to the control electrode of the switching unit 1211 and can output a control signal to it to control the switching unit 1211 to switch to a conducting or non-conducting state.

[0030] As shown in Figure 2 , the inverter circuit can have two switching units 1211, and the driving chip 121 can output control signals to the two switching units 1211 respectively to control the two switching units 1211 to switch to a conducting or non-conducting state respectively, for example, to control the two switching units 1211 to switch to a conducting state simultaneously, or to control the two switching units 1211 to switch to a non-conducting state simultaneously, or to control one of the switching units 1211 to switch to a conducting state while the other switching unit 1211 switches to a non-conducting state, etc.

[0031] In some embodiments, the driving chip 121 includes a half-bridge driving chip 121, and the inverter circuit includes a half-bridge inverter circuit. The definitions of the half-bridge driving chip 121 and the half-bridge inverter circuit are well known in the art and will not be described here. The half-bridge inverter circuit can have two switching units 1211. Please refer toFigure 3 The driving chip 121 can be an AUIR2085S chip of Infineon. The diode D2 and the capacitor C4 in the peripheral circuit of the driving chip 121 are a bootstrap power supply circuit of the driving chip 121. The resistor R4 and the capacitor C10 are used to set the switching frequency (for example, 200 kHZ) of the driving chip AUIR2085S. The functions and parameters of the pins (Vcc pin-LO pin) of the driving chip 121 can be referred to the data sheet of the original factory of Infineon, which will not be described here. Figure 3

[0032] The working principles of the inverter module 120 and the planar transformer 130 will be described below with reference to Figure 3 It should be noted that, Figure 3 only the circuit topologies in some embodiments of the driving power supply 100 of the present application are exemplarily shown, and different circuit topologies from those shown in Figure 3 may also be used in other embodiments. As Figure 3 the inverter circuit includes a half-bridge inverter circuit, the half-bridge inverter circuit includes MOS tubes M1, M2, a capacitor C3 and a capacitor C9, one end of the primary side of the planar transformer 130 is connected to the common end (Vs end) of the MOS tubes M1 and M2, the other end of the primary side of the planar transformer 130 is connected to the common end of the capacitor C3 and the capacitor C9, and one conduction end (for example, source or drain, determined according to whether the MOS tube is a P-type MOS tube or an N-type MOS tube) of the MOS tube M1 is connected to the input power supply 110 (in Figure 3 , the input power supply 110 is represented by +15VD), the first end of the capacitor C3 is connected to the capacitor C9, and the second end of the capacitor C3 is connected to the input power supply 110. The gate of the MOS tube M1 is connected to the HO end of the driving chip 121 to receive the control signal OUTA; the gate of the MOS tube M2 is connected to the LO end of the driving chip 121 to receive the control signal OUTB. The driving chip 121 converts the direct current input by the input power supply 110 into alternating current by sequentially controlling the MOS tube M1 of the upper bridge arm and the MOS tube M2 of the lower bridge arm of the half-bridge inverter circuit to be turned on or turned off, and outputs the alternating current to the primary side winding Np of the planar transformer 130. The two secondary side windings of the planar transformer 130 respectively output the positive drive voltage (for example, +15V in Figure 3 ) and the negative drive voltage (for example, -8V in Figure 3 ) used for driving the power semiconductor device 200.

[0033] ​In some embodiments, the driving chip 121 comprises a full-bridge driving chip 121, and the inverter circuit comprises a full-bridge inverter circuit. The full-bridge inverter circuit adds two bridge arms compared with the half-bridge inverter circuit, thereby correspondingly increasing the switching units 1211 (such as MOSFET, diode, triode, etc.) for controlling the turn-on or turn-off of the two bridge arms. Correspondingly, in order to further control the turn-on or turn-off of the added switching units 1211, the full-bridge driving chip 121 can be used to control the switching units 1211 of the four bridge arms on the full-bridge inverter circuit. In other embodiments, two half-bridge driving chips 121 can also be used to control the switching units 1211 of the four bridge arms, and the present application does not limit this.

[0034] In some embodiments, continuing to refer to Figure 3 , the secondary winding of the planar transformer 130 comprises a first secondary winding Ns1 and a second secondary winding Ns2; the first secondary winding Ns1 is used to provide a positive driving voltage (such as +15V in Figure 3 ) for the power semiconductor device 200, and the second secondary winding Ns2 is used to provide a negative driving voltage (such as -8V in Figure 4 ) for the power semiconductor device 200.

[0035] In some embodiments, please refer to Figure 4 , the driving power supply 100 can comprise two planar transformers 130, which respectively generate driving voltages for two power semiconductor devices 200. One end of the primary winding Np of the added planar transformer 130 is connected to the common end (Vs end) of the MOS tube M1 and the MOS tube M2, the other end is connected to the common end of the capacitor C5 and the capacitor C13, and one end of the capacitor C5 is connected to the input power supply 110 (in Figure 3 , the input power supply 110 is represented as +15VD). The working principle of the added planar transformer 130 and the inverter circuit can refer to the working principle of the corresponding embodiment in Figure 5 , which will not be described here.

[0036] In some embodiments, please refer to Figure 5 , the driving power supply 100 can comprise six planar transformers 130 (due to the size limitation of the drawing, not all planar transformers 130 are shown in Figure 5 , but it can be understood that the circuit structure of the planar transformers 130 not shown can refer to the circuit structure of the planar transformers 130 already shown in Figure 4 ), which respectively generate driving voltages for six power semiconductor devices 200. The electrical connection relationship of the six planar transformers 130 can refer to the description in the corresponding embodiment in Figures 6-8 , which will not be described here.

[0037] In this embodiment, the 6-way planar transformer 130 generates driving voltage for the 6 power semiconductor devices 200, so it can be used to drive the power semiconductor devices 200 in the three-phase motor controller.

[0038] Therefore, in this embodiment, the 6-way planar transformer 130 is controlled by the driving chip 121 in the inverter module 120, which has a simple structure, reduces the number of power devices used in the circuit, and reduces the cost and circuit size.

[0039] In some embodiments, the first secondary winding Ns1 and the second secondary winding Ns2 are arranged on different PCB substrates. Therefore, the electromagnetic interference between the secondary windings can be reduced, thereby improving the consistency of the transformer.

[0040] In some embodiments, the multi-layer PCB substrate includes a first substrate, a second substrate, a third substrate, and a fourth substrate, which are arranged in the vertical direction of the multi-layer PCB substrate in sequence; the magnetic core of the planar transformer 130 is arranged on the first substrate; considering the coupling relationship and the insulation effect between the magnetic core and the PCB trace, the primary winding Np trace is arranged on the substrate layer between the two secondary windings, specifically, please refer to Figure 9 , the first secondary winding Ns1 of the planar transformer 130 is arranged on the second substrate (board thickness 24.9um), the primary winding Np of the planar transformer 130 is arranged on the third substrate (board thickness 24.9um), and the second secondary winding Ns2 of the planar transformer 130 is arranged on the fourth substrate (board thickness 52.9um).

[0041] In some embodiments, the multi-layer PCB substrate includes a first substrate, a second substrate, a third substrate, and a fourth substrate, which are arranged in the vertical direction of the multi-layer PCB substrate in sequence; considering the coupling relationship and the insulation effect between the magnetic core and the PCB trace, the primary winding Np trace is arranged on the substrate layer between the two secondary windings, specifically: the magnetic core of the planar transformer 130 is arranged on the first substrate; the second secondary winding Ns2 of the planar transformer 130 is arranged on the second substrate (board thickness 24.9um); the primary winding Np of the planar transformer 130 is arranged on the third substrate (board thickness 24.9um); and the first secondary winding Ns1 of the planar transformer 130 is arranged on the fourth substrate (board thickness 52.9um).

[0042] In some embodiments, the driving power supply 100 comprises three groups of planar transformers 130, respectively coupled to the power semiconductor devices 200 in three-phase current loops; wherein the power semiconductor devices 200 in each phase current loop are connected to one group of the planar transformers 130.

[0043] In some embodiments, the present application adopts a 4-layer PCB substrate, the planar transformer 130 comprises a PCB substrate, two E-shaped magnetic cores and winding traces in the PCB substrate, and epoxy glue is used to bond one E-shaped magnetic core and the PCB substrate first, and then bond the upper and lower parts of the magnetic core.

[0044] In some embodiments, when selecting the magnetic core of the planar transformer 130, the volume, thermal resistance and magnetic core loss of the magnetic core need to be considered comprehensively, in order to control the magnetic core loss at 100-200 mW / cm3, therefore the maximum magnetic flux density is selected as 1000 GS, the current density of the transformer primary and secondary winding is selected as 35 A / mm2, the window coefficient K is 0.4, and the switching frequency f of the transformer is 200 kHZ, through AP method calculation and trace space limitation, finally the EE13 of Dongmagnetic is selected as the magnetic core, and the material adopts DMR95 of Dongmagnetic. s

[0045] The turn ratio of the planar transformer 130 is designed as Np: Ns1: Ns2 = 1: 2.15: 1.16, the number of turns of the primary side is calculated while considering the limitation of the trace space on the PCB, and finally the number of turns is selected as 3 turns, since the primary side selects 3 turns, the number of turns is designed as an integer, and finally the turn ratio of the transformer is Np: Ns1: Ns2 = 3: 7: 4.

[0046] In some embodiments, considering that the copper thickness is relatively thin and the PCB trace space is limited, the transformer winding trace current density is selected as 35 A / mm2, for example. 2 The calculated trace line widths of the transformer primary and secondary sides are as follows: the primary winding Np trace line width is 0.695 mm, the first secondary winding Ns1 trace line width is 0.114 mm, and the second secondary winding Ns2 trace line width is 0.243 mm.

[0047] In some embodiments, in order to meet the insulation requirements, the line width and gap of the printed board with a copper thickness of 24.9 um are greater than 150 um, the line width and gap of the printed board with a copper thickness of 52.9 um are greater than 250 um, and the spacing between the coil and the magnetic core is greater than 400 um.

[0048] Those skilled in the art can understand that the writing order of each step in the above method of the specific implementation manner does not mean a strict execution order and does not constitute any limitation on the implementation process, and the specific execution order of each step should be determined by its function and possible inherent logic.

[0049] Please refer to​Figure 9 Figure 10 FIG. 1 is a schematic diagram of an embodiment of a motor control device provided by the present application. The motor control device 90 includes the drive power supply 100 described above.

[0050] The above scheme converts the input voltage of the input power supply by the planar transformer to provide a driving voltage for the power semiconductor device. The planar transformer has the advantages of low height, fast heat dissipation, high power density, low leakage inductance, good consistency, and superior EMC performance, and also has great advantages in cost. Moreover, by arranging the primary winding and the secondary winding of the planar transformer on different PCB substrates, high-low voltage isolation of the primary and secondary windings is achieved, and safety is improved.

[0051] Referring to Figure 10 ​ FIG. 1 is a schematic diagram of an embodiment of a motor control device provided by the present application. The motor control device 90 includes the drive power supply 100 described above.

[0052] The above scheme converts the input voltage of the input power supply by the planar transformer to provide a driving voltage for the power semiconductor device. The planar transformer has the advantages of low height, fast heat dissipation, high power density, low leakage inductance, good consistency, and superior EMC performance, and also has great advantages in cost. Moreover, by arranging the primary winding and the secondary winding of the planar transformer on different PCB substrates, high-low voltage isolation of the primary and secondary windings is achieved, and safety is improved.

[0053] The above description of the various embodiments tends to emphasize differences between the various embodiments, and the same or similar parts can be mutually referred to for brevity, which will not be repeated here.

[0054] In the several embodiments provided by the present application, it should be understood that the disclosed method and device can be implemented in other ways. For example, the device embodiment described above is only illustrative, and the division of the modules or units is only a logical function division, and there can be another division manner in actual implementation, for example, a unit or component can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the coupling or direct coupling or communication connection between the units shown or discussed can be indirect coupling or communication connection through some interfaces, devices or units, and can be electrical, mechanical or other forms.

[0055] In addition, each functional unit in the various embodiments of the present application can be integrated into one processing unit, or each unit can exist physically, or two or more units can be integrated into one unit. The above integrated unit can be implemented in the form of hardware, or in the form of a software functional unit.

[0056] ​​The integrated unit, if implemented in the form of a software function unit and sold or used as an independent product, can be stored in a computer readable storage medium. Based on such understanding, the technical solutions of the present application, essentially or in part, or all or part of the technical solutions can be embodied in the form of a software product. The computer software product is stored in a storage medium, and includes a plurality of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) or a processor to perform all or part of the steps of the methods in the embodiments of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disk, and various other media that can store program codes.

[0057] If the technical solutions of the present application involve personal information, the product applying the technical solutions of the present application has been informed of the personal information processing rules before processing the personal information, and has obtained the personal independent consent. If the technical solutions of the present application involve sensitive personal information, the product applying the technical solutions of the present application has obtained the personal independent consent before processing the sensitive personal information, and at the same time meets the requirement of "explicit consent". For example, at the personal information collection device such as camera, a clear and prominent mark is set to inform that the personal information collection range has been entered, and the personal information will be collected. If the person voluntarily enters the collection range, it is regarded as agreeing to collect the personal information. Or, on the device for processing personal information, the personal information processing rules are informed by using obvious mark / information, and the personal authorization is obtained by means of pop-up information or asking the person to upload the personal information. The personal information processing rules can include personal information processor, personal information processing purpose, processing method, and personal information type, etc.

Claims

1. A driving power supply for providing a driving voltage to a power semiconductor device, characterized in that, The drive power supply comprises: an input power supply; an inverter module coupled to the input power supply, configured to convert an input voltage of the input power supply into an alternating current; a planar transformer, a primary winding of the planar transformer being coupled to the inverter module to receive the alternating current output by the inverter module, configured to perform a voltage transformation on the alternating current provided by the inverter module to provide a driving voltage for the power semiconductor device; the planar transformer is arranged on a PCB substrate set, the PCB substrate set comprising a plurality of PCB substrates, the primary winding and the secondary winding of the planar transformer being arranged on different PCB substrates.

2. The driving power supply according to claim 1, characterized by The inverter module comprises a driving chip and an inverter circuit, the driving chip being connected to the inverter circuit and configured to output a control signal to at least one switching unit in the inverter circuit, the control signal being used to control the at least one switching unit to switch to a conducting or non-conducting state.

3. The drive power supply according to claim 2, wherein: the driving chip comprises a half-bridge driving chip or a full-bridge driving chip, and the inverter circuit comprises a half-bridge inverter circuit or a full-bridge inverter circuit.

4. The driving power supply according to claim 1, characterized by The secondary winding of the planar transformer comprises a first secondary winding and a second secondary winding, the first secondary winding being configured to provide a positive driving voltage for the power semiconductor device, and the second secondary winding being configured to provide a negative driving voltage for the power semiconductor device.

5. The driving power supply according to claim 4, wherein The first secondary winding and the second secondary winding are arranged on different PCB substrates.

6. The driving power supply according to claim 5, wherein The plurality of PCB substrates comprises a first substrate, a second substrate, a third substrate, and a fourth substrate, the first substrate, the second substrate, the third substrate, and the fourth substrate being arranged in a vertical direction of the plurality of PCB substrates in sequence. The magnetic core of the planar transformer is arranged on the first substrate. The first secondary winding of the planar transformer is arranged on the second substrate. The primary winding of the planar transformer is arranged on the third substrate. The second secondary winding of the planar transformer is arranged on the fourth substrate.

7. The driving power supply according to claim 5, wherein The plurality of PCB substrates comprises a first substrate, a second substrate, a third substrate, and a fourth substrate, the first substrate, the second substrate, the third substrate, and the fourth substrate being arranged in a vertical direction of the plurality of PCB substrates in sequence. The magnetic core of the planar transformer is arranged on the first substrate. The second secondary winding of the planar transformer is arranged on the second substrate. The primary winding of the planar transformer is arranged on the third substrate. The first secondary winding of the planar transformer is arranged on the fourth substrate.

8. The driving power supply according to claim 1, wherein The drive power supply comprises three groups of planar transformers, each group of planar transformers being coupled to the power semiconductor device in a three-phase current circuit; wherein the power semiconductor device in each phase current circuit is connected to one group of planar transformers.

9. An electric motor control device characterized by comprising: The drive power supply comprises any one of claims 1-8.

10. A vehicle characterized by comprising: The motor control device comprises claim 9.

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