Ion source magnetic field generating device and ion implantation device
By designing an adjustable magnetic field generator in the semiconductor manufacturing process, the problem of low ionization rate of the reactant gas was solved, resulting in more efficient gas ionization and extended ion source lifespan.
Patent Information
- Application Number
- CN202423321061.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-12-23
- Estimated Expiration
- 2034-12-31
AI Technical Summary
In the existing technology, the ionization rate of the reactive gas in the semiconductor device ion implantation manufacturing process is low. Some electrons fail to pass through the electron outlet under the action of the magnetic field, resulting in electrons colliding with the arc chamber cavity or depositing in the insufficiently ionized gas, which reduces the ion source lifetime.
Design an ion source magnetic field generating device. By setting adjustable magnetic poles and magnetic yoke components on the arc chamber shell, an eccentric magnetic field is formed, which enhances the movement distance of electrons in the arc chamber cavity, controls the collision between electrons and reactant gases, and improves the ionization rate.
It enables flexible adjustment of the magnetic field distribution within the arc chamber, improves the gas ionization rate, reduces electron impacts and gas deposition within the arc chamber, and extends the ion source lifetime.
Smart Images
Figure CN223712706U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor equipment, in particular to an ion source magnetic field generating device and an ion implantation device. BACKGROUND
[0002] In the ion implantation manufacturing process of semiconductor elements, the electrons required during the ionization of the gas in the arc chamber cavity are usually provided by the cathode. The generated electrons enter the arc chamber cavity from the electron inlet of the arc chamber shell under the action of arc pressure, collide with the reaction gas to form the required plasma, and the plasma exits the arc chamber cavity from the electron outlet of the arc chamber shell. The electron inlet and the electron outlet are opposite, and the direction of the electron inlet pointing to the electron outlet is defined as the ion beam flow direction.
[0003] In order to enhance the ionization rate of the gas (increase the probability of collision between electrons and gas molecules), a magnetic field of a certain intensity is usually applied outside the arc chamber cavity, and an equipotential reflecting electrode is added opposite the cathode to control the spiral repeated motion of the electrons in the cavity, so as to avoid a large number of electrons directly impacting the arc chamber cavity. However, based on the magnetic field distribution in the prior art, part of the electrons cannot pass through the electron outlet under the action of the magnetic field, resulting in part of the electrons impacting the arc chamber cavity, or part of the gas that is not fully ionized also deposits on the inner wall of the arc chamber, reducing the service life of the ion source. CONTENT OF THE UTILITY MODEL
[0004] The purpose of the present application is to provide a technical solution to solve the problem of low ionization rate of reaction gas in the ion implantation manufacturing process of semiconductor elements in the related art.
[0005] Based on the above problems, the present application provides an ion source magnetic field generating device, which comprises:
[0006] An arc chamber shell, an arc chamber cavity is formed inside the arc chamber shell;
[0007] A source magnetic assembly, comprising: a pair of magnetic sources distributed on opposite sides of the arc chamber shell, and a magnetic yoke connected to the pair of magnetic sources;
[0008] Any magnetic source comprises a magnetic pole and a coil arranged at the outer edge of the magnetic pole, and the magnetic pole is configured to be adjustable in relative position between the magnetic pole and the arc chamber shell in the ion beam flow direction.
[0009] According to the ion source magnetic field generating device provided by the present application, the distribution range of the magnetic field in the arc chamber cavity is modified, and the demand for magnetic field distribution of different processes can be met.
[0010] Further, the pair of source magnets are arranged close to the electron inlet of the arc chamber shell.
[0011] Further, the arc chamber shell surface is provided with a guide portion, the extension direction of the guide portion is parallel to the ion beam flow direction, at least part of the magnetic pole is arranged in the guide portion and can move relative to the arc chamber shell along the extension direction of the guide portion.
[0012] Further, the guide portion is a mounting groove recessed from the arc chamber shell surface to the arc chamber cavity, and the mounting groove is not communicated with the arc chamber cavity.
[0013] Further, the magnetic yoke comprises:
[0014] The connecting plate and a pair of mounting plates, the pair of mounting plates are respectively connected with the pair of magnetic sources, and the pair of mounting plates are connected through the connecting plate;
[0015] The magnetic yoke is provided with a plurality of adjusting members, the plurality of adjusting members are respectively connected with the mounting plate and the connecting plate, and the mounting plate and the magnetic source, when the adjusting member is in a loosened state, the magnetic source can move relative to the arc chamber shell along the ion beam flow direction.
[0016] Further, the part of the mounting plate close to the connecting plate is provided with at least two waist-shaped holes, the center line of the two waist-shaped holes is parallel to the ion beam flow direction, and the extension direction of the two waist-shaped holes is also parallel to the ion beam flow direction;
[0017] The adjusting member detachably connects the mounting plate and the connecting plate through the waist-shaped hole.
[0018] Further, the connecting plate is provided with a protruding portion, the protruding portion is provided with a through hole, the axial direction of the through hole is parallel to the ion beam flow direction;
[0019] The side of the mounting plate opposite to the protruding portion is provided with a guide hole, the axis of the guide hole is collinear with the through hole;
[0020] The connecting plate has a limiting shaft, the limiting shaft penetrates through the through hole and the guide hole.
[0021] Further, the source magnetic assembly further comprises a coil support structure, the coil support structure comprises:
[0022] The clamp portion is fixedly connected with the magnetic pole in a clamp manner;
[0023] The extension portion is adjacent to the clamp portion, and the extension portion is configured to abut against the coil.
[0024] Further, the magnetic pole is provided with a clamping groove matched with the clamp portion in the circumferential direction, at least part of the clamp portion is inserted into the clamping groove, so as to realize the fixed connection between the clamp portion and the magnetic pole.
[0025] The application also provides an ion implantation device, the ion implantation device comprising the ion source magnetic field generating device as described above.
[0026] According to the ion implantation device provided in the application, the magnetic field distribution range in the arc chamber cavity can be modified, and the demand of different processes on the magnetic field distribution can be met. BRIEF DESCRIPTION OF DRAWINGS
[0027] Figure 1 A schematic diagram of an ion source magnetic field generating device provided in an embodiment of the application is shown in the figure.
[0028] Figure 2 A schematic diagram of a mounting groove on an arc chamber shell provided in an embodiment of the application is shown in the figure.
[0029] Figure 3 A front view of the ion source magnetic field generating device provided in an embodiment of the application is shown in the figure.
[0030] Figure 4 A schematic diagram of the ion source magnetic field generating device along the section A-A is shown in the figure. Figure 3
[0031] A partial enlarged view of the A part in the figure is shown in the figure. Figure 5 Figure 4 A partial enlarged view of the B part in the figure is shown in the figure.
[0032] Figure 6 Figure 4
[0033] Reference signs: 100, ion source magnetic field generating device; 11, arc chamber shell; 111, electron inlet; 112, electron outlet; 113, mounting groove; 12, source magnetic assembly; 121, magnetic source; 1211, coil; 1212, magnetic pole; 1213, coil support structure; 1213a, clamping part; 1213b, extension part; 122, magnetic yoke; 1221, mounting plate; 1221a, waist-shaped hole; 1221b, guide hole; 1222, connecting plate; 1222a, protruding part; 1222b, through hole. DETAILED DESCRIPTION
[0034] The application will be described in detail below with reference to the specific embodiments shown in the drawings, but these embodiments do not limit the application, and the structural, method, or functional changes made by those skilled in the art based on these embodiments are included in the protection scope of the application.
[0035] For the convenience of description, the application defines the up-down, left-right, front-back directions as shown in the figure, and assumes that the ion source magnetic field generating device is placed on a horizontal plane, and the up-down direction is perpendicular to the horizontal plane. Figure 1
[0036] Reference is made to the specific embodiments shown in the drawings. Figure 1 The ion source magnetic field generating device 100 provided by the present application comprises an arc chamber shell 11 and a source magnetic assembly 12. The arc chamber shell 11 is internally formed with an arc chamber cavity. The source magnetic assembly 12 comprises a pair of magnetic sources 121 distributed on opposite sides of the arc chamber shell 11, and a magnetic yoke 122 connected to the pair of magnetic sources 121.
[0037] It is easily understood that the two magnetic sources 121 can be arranged in the up-down direction or the left-right direction of the arc chamber shell 11. In the embodiment of the present application, the two magnetic sources 121 are arranged in the up-down direction of the arc chamber shell 11.
[0038] It should be noted that in the source magnetic assembly 12 provided by the present application, the relative position relationship between the magnetic pole 1212 and the arc chamber shell 11 in the ion beam flow direction is adjustable, so as to realize the modification of the magnetic field distribution range in the arc chamber cavity, so as to meet the demand of different processes on the magnetic field distribution.
[0039] As an optional implementation manner, the arc chamber shell 11 is provided with a guide portion, the extension direction of the guide portion is parallel to the ion beam flow direction, at least part of the magnetic pole 1212 is arranged in the guide portion and can move relative to the arc chamber shell 11 along the extension direction of the guide portion. Through the arrangement of the guide portion, the magnetic pole 1212 can be guided to move in the front-rear direction, so as to facilitate the adjustment of the magnetic field distribution in the arc chamber cavity.
[0040] As an optional implementation manner, the guide portion can be a guide groove which is surrounded on the surface of the arc chamber shell 11 and whose extension direction is parallel to the ion beam flow direction.
[0041] As shown in Figure 2 As another optional implementation manner, the guide portion can be realized by slotting on the surface of the arc chamber shell 11. For example, a mounting groove 113 which is recessed from the surface of the arc chamber shell 11 to the arc chamber cavity can be formed by slotting on the surface of the arc chamber shell 11, and the extension direction of the mounting groove 113 is parallel to the ion beam flow direction.
[0042] Referring to Figure 2 , Figure 3 and Figure 4 , any one of the magnetic sources 121 comprises a magnetic pole 1212 and a coil 1211 arranged on the outer edge of the magnetic pole 1212, and the magnetic flux size is controlled by adjusting the excitation current size of the coil 1211, so as to meet the demand of different processes on the magnetic field intensity. Exemplarily, the magnetic pole 1212 adopts a cylindrical shape, and the diameter of the magnetic pole 1212 is substantially equal to the groove width of the mounting groove 113, so that the mounting groove 113 can limit the freedom degree of the magnetic pole 1212 in the left-right direction and make the magnetic pole 1212 have the freedom degree in the front-rear direction, so as to adjust the relative position between the magnetic pole 1212 and the arc chamber shell 11 in the ion beam flow direction, thereby realizing the modification of the magnetic field distribution range in the arc chamber cavity.
[0043] It should be noted that the installation slot 113 is not in communication with the arc chamber cavity, and thus one end of the magnetic pole 1212 extends into the arc chamber shell 11 through the installation slot 113 (the one end of the magnetic pole 1212 is located in the shell and does not enter the arc chamber cavity), thereby shortening the distance between the upper and lower magnetic poles 1212, effectively reducing the excitation current required under the same magnetic field strength, and reducing the power demand of the source magnetic assembly 12.
[0044] As an optional implementation, the pair of source magnets 121 are arranged close to the electron inlet 111 of the arc chamber shell 11. Illustratively, as viewed along the extension direction of the magnetic pole 1212, the distance between the center of the magnetic pole 1212 (when the magnetic pole 1212 is irregularly shaped, the center is the center of gravity of the magnetic pole 1212; when the magnetic pole 1212 is regularly shaped, the center passes through the symmetry line of the magnetic pole 1212) and the electron inlet 111 of the arc chamber shell 11 is defined as a first interval, and the distance between the center of the magnetic pole 1212 and the electron outlet 112 of the arc chamber shell 11 is defined as a second interval, and the first interval is less than the second interval.
[0045] Specifically, compared with the electron inlet 111 and the electron outlet 112 of the arc chamber shell 11, the center of the installation slot 113 is closer to the electron inlet 111 of the arc chamber shell 11. In this way, the magnetic field generated by the source magnetic assembly 12 is an eccentric magnetic field (i.e., the center of the magnetic field is not at the center of the arc chamber cavity), which can effectively increase the movement distance of the electrons, control the full collision of the electrons with the reaction gas, thereby reducing the bombardment of the excess electrons on the cathode and the reflectron, and reducing the deposition of residual gas in the arc chamber cavity.
[0046] As an optional implementation, the magnetic yoke 122 includes:
[0047] The connecting plate 1222 and a pair of installation plates 1221, the pair of installation plates 1221 are respectively connected with the pair of source magnets 121, and the pair of installation plates 1221 are connected through the connecting plate 1222;
[0048] The magnetic yoke 122 is configured with a plurality of adjusting members, the plurality of adjusting members are respectively connected with the installation plate 1221 and the connecting plate 1222, and the installation plate 1221 and the source magnet 121, when the adjusting member is in a loosened state, the source magnet 121 can move relative to the arc chamber shell 11 along the ion beam flow direction.
[0049] As Figure 5As shown, the mounting plate 1221 near the connecting plate 1222 has at least two oblong holes 1221a. The center line connecting the two oblong holes 1221a is parallel to the ion beam direction, and their extension direction is also parallel to the ion beam direction. An adjusting member (not shown in the figure) can be a bolt, which passes through the oblong holes 1221a, allowing for a detachable connection between the mounting plate 1221 and the connecting plate 1222. With this configuration, when the adjusting member is in a loose state, the mounting plate 1221 can be adjusted in a position parallel to the ion beam direction, thereby allowing the magnetic pole 1212 to be adjusted in the ion beam direction, thus adjusting the magnetic field distribution within the arc chamber.
[0050] As an optional implementation method, such as Figure 5 As shown, the connecting plate 1222 is provided with a protrusion 1222a, and a through hole 1222b is provided on the protrusion 1222a. The axis of the through hole 1222b is parallel to the ion beam direction. A guide hole 1221b is provided on the side of the mounting plate 1221 opposite to the protrusion 1222a. The axis of the guide hole 1221b is substantially collinear with the axis of the through hole 1222b. The connecting plate 1222 has a limiting shaft (…). Figure 5 (Not shown in the image), the limiting shaft passes through the through hole 1222b and the guide hole 1221b. With this design, when it is necessary to adjust the position of the mounting plate 1221 in the front-back direction, the limiting shaft can guide the mounting plate 1221 to move in the front-back direction, improving the convenience of magnetic field distribution adjustment.
[0051] refer to Figure 6 The source magnetic assembly 12 also includes a coil support structure 1213, which includes:
[0052] The clamp part 1213a is fixedly connected to the magnetic pole 1212 by means of a clamp;
[0053] The extension portion 1213b is adjacent to the clamp portion 1213a, and the extension portion 1213b is configured to abut against the coil 1211.
[0054] The coil 1211 is disposed on the outside of the magnetic pole 1212, and the end of the coil 1211 near the arc chamber housing 11 abuts against the extension 1213b of the coil support structure 1213. The coil support structure 1213 is fixed to the magnetic pole 1212 by the clamp part 1213a. In this way, the coil 1211 can be easily installed and removed.
[0055] As an optional implementation, the magnetic pole 1212 is provided with a groove in its circumference that mates with the clamping part 1213a. At least a portion of the clamping part 1213a is inserted into the groove, thereby achieving a fixed connection between the clamping part 1213a and the magnetic pole 1212. This method facilitates reliable installation between the coil 1211 and the magnetic pole 1212.
[0056] The embodiment of the present application also provides an ion implantation device, which comprises the ion source magnetic field generating device 100 provided by the embodiment of the present application.
[0057] The above only discloses the preferred embodiment of the present application, but does not limit the scope of the present application. Those skilled in the art can understand that changes, modifications, substitutions, combinations and simplifications without departing from the spirit and scope of the present application and the appended claims should be equivalent replacement methods and still belong to the scope of the present application.
Claims
1. An ion source magnetic field generating device (100), characterized in that, The ion source magnetic field generating device (100) includes: Arc chamber shell (11), wherein an arc chamber cavity is formed inside the arc chamber shell (11); The source magnetic assembly (12) includes: a pair of magnetic sources (121) distributed on opposite sides of the arc chamber housing (11), and a magnetic yoke (122) connecting the pair of magnetic sources (121); Each of the magnetic sources (121) includes a magnetic pole (1212) and a coil (1211) disposed on the outer edge of the magnetic pole (1212), wherein the magnetic pole (1212) is configured such that the relative position between the magnetic pole (1212) and the arc chamber housing (11) is adjustable in the ion beam direction.
2. The ion source magnetic field generating device (100) according to claim 1, characterized in that, A pair of magnetic sources (121) are positioned near the electronic inlet (111) of the arc chamber housing (11).
3. The ion source magnetic field generating device (100) according to claim 1, characterized in that, The surface of the arc chamber housing (11) is provided with a guide portion, the extension direction of the guide portion is parallel to the direction of the ion beam, at least a portion of the magnetic pole (1212) is disposed in the guide portion, and can move relative to the arc chamber housing (11) along the extension direction of the guide portion.
4. The ion source magnetic field generating device (100) according to claim 3, characterized in that, The guide portion is a mounting groove (113) recessed from the surface of the arc chamber housing (11) into the arc chamber cavity, and the mounting groove (113) is not in communication with the arc chamber cavity.
5. The ion source magnetic field generating device (100) according to claim 1, characterized in that, The magnetic yoke (122) includes: A connecting plate (1222) and a pair of mounting plates (1221), wherein the pair of mounting plates (1221) are respectively connected to the pair of magnetic sources (121), and the pair of mounting plates (1221) are connected through the connecting plate (1222); The magnetic yoke (122) is equipped with a plurality of adjustment members, which are respectively connected to the mounting plate (1221) and the connecting plate (1222), as well as the mounting plate (1221) and the magnetic source (121). When the adjustment members are in a loose state, the magnetic source (121) can move relative to the arc chamber housing (11) along the ion beam direction.
6. The ion source magnetic field generating device (100) according to claim 5, characterized in that, The mounting plate (1221) near the connecting plate (1222) is provided with at least two waist-shaped holes (1221a). The center line connecting the two waist-shaped holes (1221a) is parallel to the direction of the ion beam, and the extension direction of the two waist-shaped holes (1221a) is also parallel to the direction of the ion beam. The adjusting member detachably connects the mounting plate (1221) and the connecting plate (1222) through the waist-shaped hole (1221a).
7. The ion source magnetic field generating device (100) according to claim 6, characterized in that, The connecting plate (1222) is provided with a protrusion (1222a), and the protrusion (1222a) is provided with a through hole (1222b), the axis of the through hole (1222b) being parallel to the direction of the ion beam; The mounting plate (1221) is provided with a guide hole (1221b) on the side opposite to the protrusion (1222a), and the axis of the guide hole (1221b) is collinear with the through hole (1222b); The connecting plate (1222) has a limiting shaft that passes through the through hole (1222b) and the guide hole (1221b).
8. The ion source magnetic field generating device (100) according to claim 1, characterized in that, The source magnetic assembly (12) further includes a coil support structure (1213), which includes: The clamp part (1213a) is fixedly connected to the magnetic pole (1212) by means of a clamp; An extension portion (1213b) is adjacent to the clamp portion (1213a), and the extension portion (1213b) is configured to abut against the coil (1211).
9. The ion source magnetic field generating device (100) according to claim 8, characterized in that, The magnetic pole (1212) is provided with a groove in the circumference that cooperates with the clamp part (1213a). At least a part of the clamp part (1213a) is inserted into the groove to achieve a fixed connection between the clamp part (1213a) and the magnetic pole (1212).
10. An ion implantation device, characterized in that, The ion implantation device includes an ion source magnetic field generating device (100) as described in any one of claims 1 to 9.