Power transistor array

Abstract

The utility model discloses a power transistor array comprising a transistor array substrate, an upper guard plate and transistors, the upper end of the transistor array substrate is integrally injection-molded with a needle groove, the middle parts of the two ends of the substrate are provided with assembling grooves, the inner walls of the assembling grooves are provided with through holes, the top of the upper end of the transistor array substrate is in butt joint with the upper guard plate, and the upper guard plate is in butt joint with the upper guard plate. And flow channels are formed around the middle part of the upper protection plate. When the power transistor array is used, the upper protection plate serves as an upper end protection structure of the transistor array substrate, the whole upper protection plate is designed by adopting a symmetrical distribution structure, transistors in the transistor array substrate can be well protected in multiple directions, damage to the transistors is reduced, and the reliability of the power transistor array is improved. Meanwhile, the upper protection plate is connected with the transistor array substrate in an embedded connection mode, the upper protection plate is connected with the transistor array substrate through the butt joint columns and the through holes, and the connection mode is easy to operate, convenient to use and practical.

Description

TECHNICAL FIELD

[0001] The utility model relates to transistor array technical field, concretely is a kind of power transistor array. BACKGROUND

[0002] The basic principle of transistor array is to use the amplification of transistor, input signal is amplified by first-stage transistor, then amplified by second-stage transistor, and finally output amplified signal.Transistor array is widely used in electronic circuit, such as power amplifier, analog circuit, digital circuit, etc.

[0003] The utility model discloses a transistor array structure (CN214898425U), including transistor array shell, the upper surface of transistor array shell is equipped with the clamping groove, the inside of clamping groove is provided with fixed hole, clamping plate is installed in the upper of clamping groove, the inside of clamping plate is equipped with fixed bolt, connecting pivot is provided at the front end of fixed bolt, and fixed column is installed below connecting pivot.Compared with prior art, the utility model provides a transistor array structure, has the following beneficial effects: the lower part of the transistor array structure is provided with a water tank, the heat generated by the transistor array in the transistor array shell and the heat generated by the bottom plate can be absorbed by the water in the water tank and dissipated through the cooling fins, preventing the transistor array in the transistor array shell from being in direct contact with the bottom plate, which makes it difficult to dissipate the heat generated during operation, affecting the working efficiency of the transistor array in the transistor array shell.However, due to the limited protection of the upper part of the transistor array, the transistor may be damaged when it is pressed down by a hard object, resulting in the loss of amplification function of the entire transistor, which causes trouble to the user.

[0004] Therefore, we propose a power transistor array. UTILITY MODEL CONTENTS

[0005] The utility model aims at providing a power transistor array to solve the problems raised in the background art.

[0006] To achieve the above object, the utility model provides the following technical scheme: a power transistor array, comprising a transistor array substrate, an upper guard plate and a transistor, a needle slot is integrally injection molded at the upper end of the transistor array substrate, assembly grooves are formed in the middle of both ends of the transistor array substrate, through holes are formed in the inner wall of the assembly grooves, an upper guard plate is butt-jointed to the top of the upper end of the transistor array substrate, and flow channels are formed in the middle of the upper guard plate.

[0007] Preferably, a gasket is fixed at the corners of the upper guard plate, and a butt-joint column is fixed at the assembly groove of both ends of the transistor array substrate.

[0008] Preferably, the size of the butt joint column matches the size of the through hole, and the butt joint column and the through hole are connected in an interference fit.

[0009] Preferably, the inside of the needle slot is inserted with a transistor, and the transistor is uniformly inserted into the needle slot through a pin.

[0010] Preferably, the upper protective plate is symmetrically distributed with the transistor array substrate, and the upper protective plate is buckled on the upper part of the transistor array substrate, and the upper protective plate shields and protects the transistor array substrate.

[0011] Preferably, the top of the flow channel is fixed with a partition column, the partition column is sequentially distributed around the flow channel, and the top of the partition column is inserted into the four around the needle slot.

[0012] Preferably, the gap between the partition column and the needle slot is provided for airflow, the upper protective plate and the transistor array substrate form a shock absorption protection structure through a gasket, and the two ends of the gasket are in contact with the transistor array substrate and the upper protective plate, respectively.

[0013] Compared with the prior art, the power transistor array has the advantages that: when the power transistor array is used, the upper protective plate serves as the upper end protection structure of the transistor array substrate, and is designed in a symmetrical distribution structure, so that the transistors in the transistor array substrate can be well protected in multiple directions, and the damage of the transistors is reduced; meanwhile, the upper protective plate is connected with the transistor array substrate in an embedded connection mode, the upper protective plate is connected with the transistor array substrate through the butt joint column and the through hole, the connection mode is simple, convenient and practical, and the interference fit connection mode also facilitates the separation of the upper protective plate and the transistor array substrate, thereby reducing the maintenance difficulty.

[0014] The composite structure composed of multiple transistors can further amplify the current amplified by the first transistor, and can provide a much higher current gain than any one transistor, and in the case of using an integrated current chip, the transistor array can occupy less space than using two separate transistor elements, because the two transistors can share a common electrode, thereby reducing the design size of the entire structure and improving the space utilization of the device. BRIEF DESCRIPTION OF DRAWINGS

[0015] Fig. 1 It is a three-dimensional structure schematic diagram of the utility model;

[0016] Fig. 2 It is a transistor array substrate structure schematic diagram of the utility model;

[0017] Fig. 3 It is an upper protective plate structure schematic diagram of the utility model.

[0018] In the figure: 1, transistor array substrate; 2, needle slot; 21, transistor; 3, assembly groove; 31, through hole; 4, upper guard plate; 5, flow channel; 51, partition column; 52, inner groove; 6, gasket; 7, butt joint column. DETAILED DESCRIPTION

[0019] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0020] Please refer to Figs. 1-3 The present application provides a technical solution: a power transistor array, comprising a transistor array substrate 1, an upper guard plate 4 and a transistor 21, a needle slot 2 is integrally injection molded at the upper end of the transistor array substrate 1, assembly grooves 3 are provided at the middle of both ends of the transistor array substrate 1, through holes 31 are provided in the inner wall of the assembly grooves 3, the upper end of the transistor array substrate 1 is butt jointed with the upper guard plate 4, flow channels 5 are provided around the middle of the upper guard plate 4, gaskets 6 are fixed at the four corners of the upper guard plate 4, butt joint columns 7 are fixed at the assembly grooves 3 of both ends of the transistor array substrate 1 along the upper guard plate 4, the size of the butt joint columns 7 matches the size of the through holes 31, the butt joint columns 7 and the through holes 31 are connected by interference, the upper guard plate 4 is symmetrically distributed with the transistor array substrate 1, the upper guard plate 4 is buckled on the upper part of the transistor array substrate 1, and the upper guard plate 4 shields and protects the transistor array substrate 1. The upper guard plate 4 serves as the upper end protection structure of the transistor array substrate 1, is designed as a whole with a symmetrical distribution structure, can well protect the transistor 21 in the transistor array substrate 1 from all directions, reduces damage to the transistor 21, the upper guard plate 4 is connected with the transistor array substrate 1 by an embedded connection mode, the upper guard plate 4 is connected with the transistor array substrate 1 through the butt joint columns 7 and the through holes 31, this connection mode is simple, convenient and practical, and the interference connection mode also facilitates the user to separate the upper guard plate 4 and the transistor array substrate 1, reduces the difficulty of maintenance.

[0021] The transistor 21 is inserted into the needle slot 2, and the transistor 21 is inserted into the needle slot 2 through the pins. The transistors 21 are arranged at equal distances in the needle slot 2. The composite structure formed by the plurality of transistors 21 can further amplify the current amplified by the first transistor 21. Such a structure can provide a much higher current gain than any one transistor 21. In the case of using an integrated current chip, the transistor array can occupy less space than using two separate transistor elements, because the two transistors can share a common electrode, thereby reducing the design size of the entire structure and improving the space utilization of the device.

[0022] The top of the flow channel 5 is fixed with a partition column 51, which is distributed along the periphery of the flow channel 5 in sequence, and the top of the partition column 51 is inserted into the periphery of the needle slot 2. The gap between the partition column 51 and the needle slot 2 is used for air flow. The upper guard plate 4 forms a shock absorption protection structure with the transistor array substrate 1 through the gasket 6, and the two ends of the gasket 6 are in contact with each other and the transistor array substrate 1 and the upper guard plate 4. The partition column 51 and the flow channel 5 serve as a heat dissipation space. Through the design of the partition column 51, the flow channel 5 for air flow is separated between the upper guard plate 4 and the transistor array substrate 1, so as to reduce the temperature of the transistor array and meet the demand for effective and stable operation of the transistor array. At the same time, the gasket 6 at the four corners can absorb some shocks, reduce the vibration of the device on the transistor array substrate 1, and improve the service life of the transistor array.

[0023] Working principle: for this kind of power transistor array, first of all, the pins of the transistor 21 are inserted into the needle slot 2 in sequence according to the demand. At this time, the user closes the upper guard plate 4. The upper guard plate 4 is inserted into the through hole 31 of the assembly slot 3 on both sides of the transistor array substrate 1 through the docking column 7, and the four gaskets 6 are distributed along the periphery of the transistor array substrate 1 and the upper guard plate 4, respectively, to shock absorb and protect the transistor array substrate 1 and the upper guard plate 4. Then, the top of the partition column 51 is inserted into the periphery of the needle slot 2, and the gap between the partition column 51 and the needle slot 2 is used for air flow. Finally, the user connects the device. When the transistor 21 emits heat energy, the air flow accelerates the heat dissipation of the transistor 21.

Claims

1. A power transistor array comprising a transistor array substrate (1), an upper shield plate (4) and transistors (21), characterized in that: The upper end of the transistor array substrate (1) is integrally injection molded with a needle slot (2), and the middle of the two ends of the transistor array substrate (1) is provided with an assembly slot (3), the inner wall of the assembly slot (3) is provided with a through hole (31), the upper end of the transistor array substrate (1) is butted with an upper guard plate (4), and the middle of the upper guard plate (4) is provided with a flow channel (5).

2. A power transistor array as claimed in claim 1, characterized in that: The four corners of the upper guard plate (4) are fixed with a gasket (6), and the upper guard plate (4) is fixed with a butt column (7) along the assembly slot (3) of the transistor array substrate (1).

3. A power transistor array as claimed in claim 2, characterized in that: The size of the butt column (7) and the size of the through hole (31) are matched with each other, and the butt column (7) and the through hole (31) are connected by interference.

4. The array of power transistors of claim 1, wherein: The inside of the needle slot (2) is inserted with a transistor (21), and the transistor (21) is uniformly inserted into the needle slot (2) through the pin, and the transistors (21) are equidistantly arranged in the needle slot (2).

5. The array of power transistors of claim 1, wherein: The upper guard plate (4) and the transistor array substrate (1) are symmetrically distributed, the upper guard plate (4) is buckled on the upper part of the transistor array substrate (1), and the upper guard plate (4) shields and protects the transistor array substrate (1).

6. The array of power transistors of claim 1, wherein: The top of the flow channel (5) is fixed with a partition column (51), the partition column (51) is distributed around the flow channel (5) in sequence, and the top of the partition column (51) is inserted into the four corners of the needle slot (2).

7. A power transistor array as claimed in claim 6, characterized in that: The gap between the partition column (51) and the needle slot (2) is used for air flow, the upper guard plate (4) and the transistor array substrate (1) constitute a shock absorption protection structure through the gasket (6), and the two ends of the gasket (6) are respectively in contact with the transistor array substrate (1) and the upper guard plate (4).

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