Wafer sealing conductive mechanism

Abstract

The utility model discloses a wafer sealing conductive mechanism, which is used for packaging a wafer in a horizontal state, and comprises an annular base, a conductive part and a sealing part which are respectively arranged on the base, and a pressing part which is arranged above the conductive part and the sealing part, the conductive part, the sealing part and the pressing part correspondingly form an annular conductive end, an annular sealing end and an annular pressing end, the sealing end is located on the inner side of the conductive end, and the pressing end can move up and down. On one hand, under the pressure of the pressing end, the conductive end and the sealing end elastically abut against the edge of the wafer to achieve synchronous sealing and conduction of the wafer, and the sealing effect and the conduction reliability are effectively improved; on the other hand, the conductive end and the sealing end are in linear contact with the wafer, the contact area is small, the probability of adhesion of the wafer and the sealing end is greatly reduced, and the wafer can be conveniently taken down after being electroplated; in addition, the structure is simple, and implementation cost is low.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the field of semiconductor, concretely relates to a wafer sealing conductive mechanism. BACKGROUND

[0002] In the semiconductor packaging circuit manufacturing, when the wafer after photoetching enters the electroplating procedure, the packaging mechanism is needed to be used to seal the edge and back surface of the wafer not etched circuit accurately and completely to ensure that the wafer after photoetching has the high-precision packaging environment, thereby being applicable to each wafer processing procedure after photoetching, for example, when the wafer is immersed in the electrolyte electroplating, the wafer can have reliable cathode conductive environment.

[0003] At present, the traditional wafer packaging mechanism generally adopts the annular sealing ring, namely, when the wafer is placed on the fixture, the edge part of the wafer is adhered through the sealing ring, and under the external positive pressure, the wafer is extruded to the sealing ring and forms the sealing, and after the sealing is in place, the wafer contacts the conductive sheet to conduct the circuit in the electroplating.

[0004] However, in the actual production process, the prior art has the following defects:

[0005] 1. When the wafer extrudes the sealing ring, the sealing ring and the wafer surface are prone to adhesion phenomenon, so that the wafer is difficult to take down after electroplating, and the wafer is prone to damage when being taken down by force;

[0006] 2. The service life of the commonly used sealing ring is limited, and aging phenomenon is prone to occur after reaching the use frequency, so that the sealing effect is poor, and if not replaced in time, the problems of liquid leakage and poor contact between the wafer and the conductive sheet are prone to occur in the electroplating. SUMMARY

[0007] The utility model wants to solve the technical problem of overcoming the prior art, and provides a new wafer sealing conductive mechanism.

[0008] To solve the above technical problems, the technical scheme adopted by the utility model is as follows:

[0009] A wafer sealing conductive mechanism is used for packaging of the wafer in a horizontal state, the sealing conductive mechanism comprises an annular base, a conductive component and a sealing component arranged on the base respectively, a pressing component arranged above the conductive component and the sealing component, the conductive component, the sealing component and the pressing component correspondingly form a conductive end, a sealing end and a pressing end in an annular shape, wherein the sealing end is located at the inner side of the conductive end, the pressing end can be arranged in up-down lifting motion, and the pressing component is pressed on the wafer upper surface edge from the pressing end during sealing; the conductive component and the sealing component are synchronously deformed and elastically abut on the wafer lower surface edge from the conductive end and the sealing end respectively, wherein the conductive end and the sealing end form linear contact with the wafer respectively.

[0010] According to one specific implementation and right rotation aspect of the utility model, the inner wall of the base further forms a limiting part protruding inward, when sealing, the limiting part abuts against the downward pressing part and limits downward movement of the downward pressing part, and the downward pressing end is synchronously pressed on the upper surface of the wafer.

[0011] Preferably, the downward pressing part comprises a pressing disc forming an annular groove from the bottom surface, an annular pressing block embedded in the annular groove, and a driving member driving the pressing disc to move up and down, wherein the bottom surface of the pressing block forms the downward pressing end and is arranged to protrude out of the annular groove downward, and when pressing downward, the pressing disc abuts against the limiting part from the edge.

[0012] Further, the downward pressing part further comprises a pad arranged between the pressing block and the groove bottom of the annular groove, wherein the deformation amount of the conductive part and the sealing part is proportional to the thickness of the pad.

[0013] According to another specific implementation and preferred aspect of the utility model, the inner wall of the base forms a first plug-in groove, the conductive part comprises a first sheet embedded in the first plug-in groove, a second sheet extending inward and downward from the inner side of the first sheet, and the conductive end extends inward and upward from the bottom of the second sheet.

[0014] According to another specific implementation and preferred aspect of the utility model, the inner wall of the base further forms a second plug-in groove below the first plug-in groove, the sealing part comprises a first block embedded in the second plug-in groove, a second block extending inward from the inner side of the first block, and the sealing end extends inward and upward from the inner side of the second block.

[0015] Preferably, the second block is recessed inward from the top surface and forms an avoiding groove avoiding the second sheet and the conductive end, which can avoid mutual interference and is beneficial to space saving, facilitating overall layout and design of the wafer electroplating equipment; at the same time, the avoiding groove forms an annular notch groove recessed inward from the groove bottom, which avoids damage caused by excessive deformation of the sealing part.

[0016] Specifically, the inclination angle of the conductive end relative to the horizontal plane is smaller than the inclination angle of the sealing end relative to the horizontal plane.

[0017] According to another specific implementation and preferred aspect of the utility model, the center lines of the base, the conductive end, the sealing end and the downward pressing end are arranged coincidentally; and / or, the downward pressing end forms surface contact with the wafer, and in the orthogonal projection on the horizontal plane, the contact area of the conductive end and the sealing end with the wafer is located in the contact area of the downward pressing end with the wafer.

[0018] In addition, the base is gradually narrowed inward from the top opening and the bottom opening, respectively. At this point, it is convenient to load the wafer from top to bottom, and at the same time, it is beneficial to the electrolyte to gradually discharge the air below the wafer and contact the wafer during the process of the wafer immersed in the electrolyte.

[0019] Due to the implementation of the above technical solutions, the utility model has the following advantages compared with the prior art:

[0020] The prior art has the phenomenon of adhesion between the sealing ring and the wafer surface when the wafer is extruded and sealed, which leads to the difficulty in taking out the wafer after electroplating, and the wafer is easily damaged when it is forcibly taken out. At the same time, the service life of the commonly used sealing ring is limited, and aging phenomenon is easy to occur after a certain number of uses, which leads to poor sealing effect. If it is not replaced in time, the problems of liquid leakage and poor contact between the wafer and the conductive piece are easy to occur in electroplating. The structure of the wafer sealing and conducting mechanism is designed as a whole, and the deficiencies and defects of the prior art are ingeniously solved. After adopting the sealing and conducting mechanism, the wafer is sent to the space between the lower pressing part and the annular base in a horizontal state, and then the lower pressing end of the lower pressing part is driven to move downward to press on the edge of the upper surface of the wafer. Under the pressure, the conductive part and the sealing part deform synchronously and are sealed and contacted at the edge of the lower surface of the wafer from the conductive end and the sealing end respectively, and the conductive end and the sealing end maintain the elastic trend of upward movement. Therefore, compared with the prior art, on the one hand, under the pressure of the lower pressing end, the wafer is synchronously sealed and conducted based on the elastic contact of the conductive end and the sealing end at the edge of the wafer, which effectively improves the sealing effect and the reliability of the conduction. On the other hand, the conductive end and the sealing end form a line contact with the wafer, the contact area is small, the probability of adhesion between the wafer and the sealing end is greatly reduced, and the wafer is convenient to take out after electroplating. In addition, the structure is simple and the implementation cost is low. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 It is a schematic diagram of the semi-partial structure of the wafer sealing and conducting mechanism of the utility model (partly omitted);

[0022] Figure 2 It is Figure 1 It is a schematic diagram of the local structure enlargement;

[0023] 1, the base; c1, the first plug-in slot; c2, the second plug-in slot; b, the limiting part;

[0024] 2, the conductive part; 21, the first piece; 22, the second piece; d1, the conductive end;

[0025] 3, the sealing part; 31, the first block; 32, the second block; d2, the sealing end; c3, the avoiding slot; c4, the notched slot;

[0026] 4, pressing-down component; 40, pressing plate; c5, annular groove; 41, pressing block; d3, pressing-down end; 42, driving member; 43, cushion block;

[0027] Y, wafer. DETAILED DESCRIPTION

[0028] In order to make the above objectives, features and advantages of the present application more apparent, the specific embodiments of the present application will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. It will be apparent, however, to one skilled in the art, that the present application can be practiced without using some or all of these specific details, and that the present application is not limited to the specific embodiments disclosed below.

[0029] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0030] In addition, the terms "first", "second", "third" and the like are used only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, for example, two, three, etc., unless otherwise explicitly specified.

[0031] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection", "fixing" and the like should be understood broadly, for example, it can be fixed connection, or detachable connection, or integral; it can be mechanical connection, or electrical connection; it can be direct connection, or indirect connection through intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0032] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0033] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0034] like Figure 1 and Figure 2 As shown, the wafer sealing conductive mechanism of this embodiment is used for packaging a wafer in a horizontal state, and includes an annular base 1, a conductive component 2 and a sealing component 3 respectively disposed on the base 1, and a pressing component 4 disposed above the conductive component 2 and the sealing component 3.

[0035] Specifically, the base 1 is designed to gradually narrow inward from the top opening and the bottom opening, respectively. In other words, the diameter of the upper part of the base 1 gradually decreases from the top opening downwards, and the diameter of the lower part of the base 1 gradually increases from the bottom opening upwards.

[0036] In this example, the upper inner wall of the base 1 has a first annular insertion groove c1. The conductive component 2 is an annular elastic conductive sheet, and includes a first sheet 21 inserted into the first insertion groove c1 and a second sheet 22 extending inward and downward from the inner side of the first sheet 21. An annular conductive end d1 is formed on the second sheet 22 extending inward and upward from the bottom of the second sheet 22. The upper inner wall of the base 1 also has a second insertion groove c2 located below the first insertion groove c1. The sealing component 3 is an annular elastic sealing element, and includes a first block 31 inserted into the second insertion groove c2 and a second block 32 extending inward from the inner side of the first block 31. An annular sealing end d2 is formed on the second block 32 extending inward and upward from the inner side of the second block 32, and the sealing end d2 is located inside the conductive end d1.

[0037] In some embodiments, the angle of the conductive end d1 relative to the horizontal plane is smaller than the angle of the sealing end d2 relative to the horizontal plane; the second block 32 is recessed inward from the top surface and forms a recessed groove c3 that avoids the second sheet 22 and the conductive end d1; meanwhile, the recessed groove c3 is formed with an inwardly recessed annular notch groove c4 from the groove bottom.

[0038] In this example, the lower pressing component 4 includes a pressing disc 40 formed with an annular groove c5 from the bottom surface, an annular pressing block 41 embedded in the annular groove c5, and a driving member 42 that drives the pressing disc 40 to move up and down, wherein the bottom surface of the pressing block 41 forms an annular lower pressing end d3 and protrudes downward out of the annular groove c5, and the lower pressing end d3 moves up and down synchronously with the pressing disc 40.

[0039] Therefore, during sealing, the wafer Y is transported by an external mechanical hand to below the lower pressing end d3 in a horizontal state, and the wafer Y is supported at the lower surface edge on the conductive end d1 and the sealing end d2, and the lower pressing component 4 is pressed at the upper surface edge of the wafer Y from the lower pressing end d3; the conductive component 2 and the sealing component 3 are deformed synchronously and elastically abut at the lower surface edge of the wafer Y from the conductive end d1 and the sealing end d2 respectively, wherein the conductive end d1 and the sealing end d2 form linear contact with the wafer Y respectively.

[0040] In some embodiments, the center lines of the base 1, the conductive end d1, the sealing end d2, and the lower pressing end d3 are arranged in line; meanwhile, the lower pressing end d3 forms a surface contact with the wafer Y, and in the orthographic projection on the horizontal plane, the contact areas of the conductive end d1 and the sealing end d2 with the wafer Y are located within the contact area of the lower pressing end d3 with the wafer Y; the driving member 42 adopts a linear air cylinder drive.

[0041] In order to further facilitate implementation, the inner wall of the base 1 is further formed with a limiting portion b that protrudes inward, and during sealing, the limiting portion b abuts against the edge of the pressing disc 40 and limits the downward movement of the lower pressing component 4, and the lower pressing end d3 is synchronously pressed on the upper surface of the wafer Y.

[0042] In addition, the lower pressing component 4 further includes a pad 43 arranged between the pressing block 41 and the groove bottom of the annular groove c5, wherein the deformation amount of the conductive component 2 and the sealing component 3 is proportional to the thickness of the pad 43, that is, when the thickness of the pad 43 increases, the length of the part of the lower pressing end d3 that protrudes downward out of the annular groove c5 increases, the downward offset amount of the conductive end d1 and the sealing end d2 increases, and vice versa.

[0043] In conclusion, after adopting the sealing and conducting mechanism, the wafer is sent to the space between the pressing part and the annular base in a horizontal state, then the pressing end of the pressing part is driven to move downward to press the edge of the upper surface of the wafer, and under the pressure, the conducting part and the sealing part are deformed synchronously and sealed at the edge of the lower surface of the wafer from the conducting end and the sealing end respectively, and the conducting end and the sealing end keep the elastic tendency of upward movement, therefore, compared with the prior art, on the one hand, under the pressure of the pressing end, the wafer is synchronously sealed and conducted based on the elastic contact of the conducting end and the sealing end at the edge of the wafer, so that the sealing effect and the conducting reliability are effectively improved; on the other hand, the linear contact is formed between the conducting end, the sealing end and the wafer, the contact area is small, the probability of adhesion between the wafer and the sealing end is greatly reduced, and the wafer is convenient to take down after electroplating; in addition, the structure is simple, and the implementation cost is low; thirdly, through the setting of the limiting part, the pressing force is conveniently controlled accurately, so that the wafer breakage problem caused by the excessive pressing force can be effectively avoided; fourthly, according to the process requirement, the pad block with different thickness is set, so that the deformation amount of the conducting part and the sealing part is adjusted, so that the elastic contact force of different sizes is obtained; fifthly, through the setting of the avoiding groove, the mutual interference between the sealing part and the conducting part can be avoided, which is beneficial to save the space, and is convenient for the overall layout and design of the wafer electroplating equipment; meanwhile, the annular notch groove is formed in the groove bottom, so that the damage of the sealing part caused by the excessive deformation amount can be avoided; sixthly, the base of the application is adopted, so that the wafer is conveniently fed from top to bottom, and meanwhile, in the process that the wafer is immersed in the electrolyte, the electrolyte is beneficial to gradually discharge the air below the wafer and contact with the wafer.

[0044] The utility model has been described in detail above, the purpose is to let the person who is familiar with this field technology can understand the content of the utility model and implement, and cannot limit the protection scope of the utility model with this, all equivalent changes or modifications according to the spirit of the utility model should be covered in the protection scope of the utility model.

Claims

1. A wafer sealing and conducting mechanism for packaging of a wafer in a horizontal state, characterized by: The sealing and conducting mechanism comprises a ring-shaped base, a conducting part and a sealing part arranged on the base respectively, and a pressing part arranged above the conducting part and the sealing part, the conducting part, the sealing part and the pressing part are correspondingly formed with a ring-shaped conducting end, a ring-shaped sealing end and a ring-shaped pressing end, the sealing end is located inside the conducting end, the pressing end is arranged to be able to move up and down, when sealing, the pressing part is pressed on the edge of the upper surface of the wafer from the pressing end, the conducting part and the sealing part are synchronously deformed and elastically abut on the edge of the lower surface of the wafer from the conducting end and the sealing end respectively, and the conducting end and the sealing end form linear contact with the wafer respectively.

2. The wafer seal conductive mechanism of claim 1, wherein: The inner wall of the base is further formed with a limiting part protruding inward, when sealing, the limiting part abuts against the pressing part and limits the downward movement of the pressing part, and the pressing end is synchronously pressed on the upper surface of the wafer.

3. The wafer seal conductive mechanism of claim 2, wherein: The pressing part comprises a pressing disc formed with a ring-shaped groove on the bottom surface, a ring-shaped pressing block embedded in the ring-shaped groove, and a driving part for driving the pressing disc to move up and down, the bottom surface of the pressing block forms the pressing end and protrudes out of the ring-shaped groove downward, and when pressing, the pressing disc abuts against the limiting part from the edge.

4. The wafer seal conductive mechanism of claim 3, wherein: The pressing part further comprises a pad arranged between the pressing block and the bottom of the ring-shaped groove, and the deformation amount of the conducting part and the sealing part is proportional to the thickness of the pad.

5. The wafer seal conductive mechanism of claim 1, wherein: The inner wall of the base is formed with a first inserting groove, the conducting part comprises a first sheet inserted in the first inserting groove, and a second sheet extending inward and downward from the inner side of the first sheet, and the conducting end extends inward and upward from the bottom of the second sheet.

6. The wafer seal conductive mechanism of claim 5, wherein: The inner wall of the base is further formed with a second inserting groove below the first inserting groove, the sealing part comprises a first block inserted in the second inserting groove, and a second block extending inward from the inner side of the first block, and the sealing end extends inward and upward from the inner side of the second block.

7. The wafer seal conductive mechanism of claim 6, wherein: The second block is recessed inward from the top surface and forms an avoiding groove avoiding the second sheet and the conducting end, and the avoiding groove is formed with a ring-shaped notch groove recessed inward from the bottom of the groove.

8. The wafer seal conductive mechanism of claim 6, wherein: The inclination angle of the conducting end relative to the horizontal plane is smaller than the inclination angle of the sealing end relative to the horizontal plane.

9. The wafer seal conductive mechanism of any of claims 1-8, wherein: The center lines of the base, the conducting end, the sealing end and the pressing end are arranged to coincide.

10. The wafer seal conductive mechanism of any one of claims 1-8, wherein: The pressing end forms surface contact with the wafer, and in the orthographic projection on the horizontal plane, the contact areas of the conducting end and the sealing end with the wafer are located within the contact area of the pressing end with the wafer. And / or, the base is arranged to gradually narrow inward from the top opening and the bottom opening respectively.

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