Polishing head, chemical mechanical polishing device and polishing solution distribution adjusting system

Abstract

The utility model provides a polishing head, which relates to the technical field of semiconductor manufacturing and comprises a rotating shaft, a carrier and a conductive film strip, the rotating shaft is connected with the carrier and is used for driving the carrier to rotate; the carrier is used for fixing a wafer; the number of the conductive thin films is multiple, the multiple conductive thin film strips and the carrier are concentrically arranged on the bottom face of the carrier, the diameters of the conductive thin film strips are different, and the adjacent conductive thin film strips are arranged at intervals; and the conductive film belt is used for electrifying and controlling the concentration of grinding particles on the surface of the wafer. And the polishing speed of the wafer surface approaches to the same or polishing is carried out according to needs, so that the polishing uniformity of the wafer surface is improved, the quality of the wafer surface is improved, and the treatment of a subsequent process is facilitated.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to polishing heads, chemical mechanical polishing apparatuses, and polishing slurry distribution and adjustment systems. Background Technology

[0002] Integrated circuits (ICs) are the core of modern electronic devices, widely used in computers, communications, medical devices, and other fields. Advances in their manufacturing technology directly drive the development of information technology, enabling electronic products to become more efficient, smaller, and consume less power. Among numerous manufacturing processes, chemical mechanical planarization (CMP) is a key technology. It achieves a high degree of planarization on the wafer surface through the synergistic effect of chemical etching and mechanical polishing. A planarized surface is crucial for subsequent multilayer wiring processes, reducing signal delay and interference and improving circuit performance. The effective application of CMP technology has not only improved the integration density and reliability of integrated circuits but also greatly promoted the development of the semiconductor industry.

[0003] With advancements in integrated circuit manufacturing processes, chemical mechanical polishing (CMP) has become increasingly important, and the uniformity of the polished surface is a crucial indicator of polishing quality. Generally, abrasive uniformity can be improved by precisely controlling the pressure in different zones of the polishing head and optimizing the polishing slurry, as well as by optimizing the polishing pad design to control abrasive distribution. Both methods achieve uniformity in CMP. However, these methods all have corresponding problems. For example, adjusting the pressure in a single zone of the polishing head affects the polishing rate of other zones, especially at the wafer edge, where pressure control impacts the overall wafer polishing quality. Furthermore, controlling the distribution of abrasive in the polishing slurry is extremely difficult. Current practices primarily aim to ensure uniform abrasive distribution across the wafer; however, the polishing rate varies throughout the wafer, making precise control of localized polishing difficult. These issues lead to differences in polishing rates across different areas of the wafer, resulting in reduced polishing uniformity and quality. Utility Model Content

[0004] This application mainly provides a polishing head, a chemical mechanical polishing device, and a polishing slurry distribution adjustment system to solve the technical problems of polishing rate differences in different areas of a wafer, which lead to reduced polishing uniformity and quality.

[0005] The technical solution adopted by this application to solve the above-mentioned technical problems is as follows:

[0006] This application provides a polishing head, including a rotating shaft, a carrier, and a conductive film strip; the rotating shaft is connected to the carrier and is used to drive the carrier to rotate; the carrier is used to fix a wafer; there are multiple conductive film strips, which are concentrically arranged on the bottom surface of the carrier and the carrier, and each conductive film strip has a different diameter, and adjacent conductive film strips are spaced apart; the conductive film strip is used to conduct electricity and control the concentration of abrasive particles on the wafer surface.

[0007] Optionally, an insulating strip is provided on the conductive film strip; one side of the insulating strip is the positive electrode of the film strip, which is electrically connected to the conductive film strip; the other side of the insulating strip is the negative electrode of the film strip, which is electrically connected to the conductive film strip.

[0008] Optionally, the insulating tapes are distributed along a first direction and a second direction, with n insulating tapes spaced apart, and the conductive film tape is divided into n concentration adjustment zones, wherein the first direction and the second direction are perpendicular to each other.

[0009] Optionally, an insulating strip is provided every 30° to 60° along the arc of the conductive film strip, and the insulating strip divides the conductive film strip into concentration adjustment zones.

[0010] Optionally, an insulating ring is provided between adjacent conductive film strips, the inner ring of the conductive film strip is the positive electrode of the film strip, and the outer ring of the conductive film strip is the negative electrode of the film strip.

[0011] Optionally, the carrier is further provided with a connection terminal, and each of the conductive film strips is electrically connected to the connection terminal. The connection terminal is used to connect an external power source to energize the conductive film strip.

[0012] This application also provides a chemical mechanical polishing apparatus, including a machine base, a lifting frame, a rotary polishing table, a polishing slurry feeding assembly, an electrostatic generator assembly, and a polishing head as described above. The polishing head further includes a connecting terminal disposed on the carrier, the connecting terminal being electrically connected to each of the conductive film strips. The rotary polishing table is disposed on the machine base. The polishing head is connected to the machine base via the lifting frame, and the polishing head and the rotary polishing table are disposed opposite each other. The polishing slurry feeding assembly is disposed on the machine base and located on one side of the rotary polishing table, for spraying polishing slurry onto the rotary polishing table. The electrostatic generator assembly is electrically connected to the connecting terminal and is used to adjust the voltage of the conductive film strips.

[0013] Optionally, a control processing component is also included on the machine platform. The control processing component is electrically connected to the electrostatic generator component and is used to control the electrostatic generator component to adjust the voltage of the conductive film strip. When the wafer requires a region with a high concentration of polishing slurry, the control processing component controls the electrostatic generator component to increase the voltage of the corresponding conductive film strip. When the wafer requires a region with a low concentration of polishing slurry, the control processing component controls the electrostatic generator component to decrease the voltage of the corresponding conductive film strip.

[0014] Optionally, it also includes a rate detection component disposed on the machine base and located on one side of the rotary polishing stage, the rate detection component being electrically connected to the control processing component; the rate detection component is used to detect the polishing rate of the wafer and send the detection result to the control processing module; the control processing module receives the detection result and controls the electrostatic generation component to adjust the voltage of the conductive thin film strip according to the detection result.

[0015] This application also provides a polishing slurry distribution adjustment system, characterized in that it includes the chemical mechanical polishing device as described above; provides a rate detection component for detecting the polishing rate of the wafer and sending the detection result to a control processing module; and provides a control processing component for receiving the detection result and controlling the electrostatic generation component to adjust the voltage of the conductive thin film strip according to the detection result.

[0016] The polishing head, chemical mechanical polishing apparatus, and polishing slurry distribution adjustment system provided in this application utilize multiple conductive thin film strips of different diameters concentrically arranged on the bottom surface of the carrier. During the wafer polishing process, the conductive thin film strips are energized to adjust the voltage. The voltage change causes the charged abrasive particles in the polishing slurry on the wafer surface to migrate under the action of the electric field, thereby changing the concentration of charged abrasive particles in local areas and further changing the polishing effect on the wafer surface. This allows the polishing rate of the wafer surface to approach the same level or to be polished as needed, thereby improving the uniformity of wafer surface polishing, improving the quality of the wafer surface, and facilitating subsequent processing. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the chemical mechanical polishing apparatus of this application;

[0019] Figure 2This is a schematic diagram of the polishing head of this application;

[0020] Figure 3 This is one of the schematic diagrams showing the distribution of conductive thin film strips in this application.

[0021] Figure 4 This is the second schematic diagram of the conductive thin film strip structure of this application;

[0022] Figure 5 This is the third schematic diagram of the conductive thin film strip structure of this application;

[0023] Figure 6 This is the fourth schematic diagram of the conductive thin film strip in this application.

[0024] Icons: 100-Polishing head; 110-Shaft; 120-Carrier; 130-Conductive film strip; 131-Insulating strip; 132-Positive electrode of film strip; 133-Negative electrode of film strip; 134-Concentration adjustment zone; 135-Insulating ring; 140-Connecting terminal; 200-Machinery; 210-Lifting frame; 220-Rotary polishing table; 230-Polishing fluid feeding assembly; 240-Electrostatic generation assembly; 250-Control and processing assembly; 260-Rate detection assembly.

[0025] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0027] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in this application embodiment are only used to explain the relative positional relationship and movement of the components in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0028] In this application, unless otherwise expressly specified and limited, the terms "connection," "fixed," etc., should be interpreted broadly. For example, "fixed" can mean a fixed connection, a detachable connection, or an integral part; it can mean a mechanical connection or an electrical connection; it can mean a direct connection or an indirect connection through an intermediate medium; it can mean the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0029] Furthermore, if the embodiments of this application involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the meaning of "and / or" throughout the text includes three parallel solutions; for example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed in this application.

[0030] Generally, the uniformity of abrasives can be improved by precisely controlling the pressure of the polishing head zones and optimizing the polishing slurry, and by optimizing the polishing pad design to control abrasive distribution. Both methods achieve uniformity in chemical mechanical polishing. However, these methods all have corresponding problems, such as: pressure control in a single zone of the polishing head will affect the polishing rate of other zones, especially pressure control in the wafer edge region will affect the overall polishing quality of the wafer. Furthermore, controlling the distribution of abrasives in the polishing slurry is very difficult, and the polishing rate is not completely uniform throughout the wafer polishing process, leading to differences in polishing rates in different areas of the wafer, thus reducing polishing uniformity and quality. To address these problems, embodiments of this application provide the following technical solutions to overcome them.

[0031] Please refer to Figures 1 to 3 This application provides a polishing head 100, including a rotating shaft 110, a carrier 120, and a conductive film strip 130. The rotating shaft 110 is connected to the carrier 120 and is used to drive the carrier 120 to rotate. The carrier 120 is used to fix a wafer. There are multiple conductive film strips 130, which are concentrically arranged on the bottom surface of the carrier 120 and the carrier 120. Each conductive film strip 130 has a different diameter, and adjacent conductive film strips 130 are spaced apart. The conductive film strip 130 is used to conduct electricity and control the concentration of abrasive particles on the wafer surface.

[0032] Specifically, the carrier 120 is mounted on the rotating shaft 110, and multiple conductive film strips 130 are concentrically arranged on the bottom surface of the carrier 120. Each conductive film strip 130 has a different diameter, and adjacent film strips are spaced apart, which enables differentiated processing of different areas on the wafer surface.

[0033] During use, the polishing head 100 is mounted on a chemical mechanical polishing (CMP) apparatus, the wafer is fixed in place by the carrier 120 with the back side of the wafer facing the bottom surface of the carrier 120, and the polishing head 100 rotates, causing the wafer to rotate as well. The front side of the wafer contacts the rotary polishing stage 220 for polishing. At this time, the conductive film strips 130 are energized. By adjusting the voltage of multiple conductive film strips 130, the concentration of abrasive particles on the wafer surface can be controlled, thereby adjusting the polishing rate of different areas on the wafer surface. It should be noted that changes in voltage can cause charged abrasive particles in the polishing slurry to migrate under the influence of the electric field, thereby changing the concentration of charged abrasive particles in local areas and thus affecting the polishing effect.

[0034] Understandably, the conductive film strip 130 can also be mounted on a substrate, which is then attached to the bottom surface of the carrier 120, achieving the same effect during use. When the conductive film strip 130 is damaged, only the substrate needs to be replaced, improving the replaceability of the conductive film strip 130 and reducing the maintenance complexity of the polishing head 100.

[0035] This application provides a polishing head 100, which uses multiple conductive film strips 130 of different diameters concentrically arranged on the bottom surface of a carrier 120. During the wafer polishing process, the conductive film strips 130 are energized to adjust the voltage. The voltage change causes the charged abrasive particles in the wafer surface polishing slurry to migrate under the action of the electric field, thereby changing the concentration of charged abrasive particles in the local area and further changing the polishing effect of the wafer surface. This makes the polishing rate of the wafer surface approach the same or allows polishing to be performed as needed, thereby improving the uniformity of wafer surface polishing, improving the quality of the wafer surface, and facilitating subsequent processing.

[0036] In this embodiment of the application, an insulating strip 131 is provided on the conductive thin film strip 130; one side of the insulating strip 131 is a positive electrode 132 of the thin film strip, which is electrically connected to the conductive thin film strip 130; the other side of the insulating strip 131 is a negative electrode 133 of the thin film strip, which is electrically connected to the conductive thin film strip 130.

[0037] Specifically, an insulating strip 131 is provided on the conductive film, with one side of the insulating strip 131 serving as the positive electrode 132 and the other side as the negative electrode 133. The positive electrode and negative electrode 133 of the conductive film strip 130 are electrically connected. Each conductive film strip 130 is powered through its own positive electrode 132 and negative electrode 133. By adjusting the voltage between the positive and negative electrodes 132 and 133, the strength of the electric field on the conductive film strip 130 is changed. The electric field strength varies on different conductive films, thereby adjusting the concentration of charged electropolishing particles in different areas of the wafer surface and improving the quality of wafer polishing.

[0038] Please refer to Figure 1 , Figure 2 and Figure 4 In this embodiment of the application, the insulating tape 131 is distributed along a first direction and a second direction, and n insulating tapes 131 are spaced apart, and the conductive film tape 130 is divided into n concentration adjustment zones 134, wherein the first direction and the second direction are perpendicular to each other.

[0039] Specifically, the insulating tape 131 is distributed along two perpendicular directions, dividing the conductive film tape 130 into multiple independent concentration adjustment zones 134. This design allows each zone to be controlled independently; by adjusting the voltage of the corresponding zone, the concentration and distribution of abrasive particles on the wafer surface can be precisely controlled. The design of the insulating tape 131 allows for differentiated processing of specific areas of the wafer, enhancing the control over local polishing effects, especially in edge areas. It should be noted that the first direction is... Figure 4 The X direction in the middle, the second direction is Figure 3 in the Y direction.

[0040] Please refer to Figure 1 , Figure 2 and Figure 5 In this embodiment of the application, an insulating strip 131 is provided every 30° to 60° along the arc of the conductive film strip 130, and the insulating strip 131 divides the conductive film strip 130 into a concentration adjustment region 134.

[0041] Specifically, by setting an insulating strip 131 every 30° to 60° on the conductive film strip 130, multiple small electric field control regions can be created. This design allows for more precise control of the electric field, enabling localized adjustment of the abrasive particle concentration on the wafer surface. Each concentration adjustment region 134 separated by the insulating strip 131 can be independently controlled. By changing the voltage in the corresponding region, the electric field strength in that region can be precisely adjusted, thereby affecting the distribution and behavior of the abrasive particles.

[0042] By employing the above-described configuration and precisely controlling the concentration of abrasive particles in different areas, the difference in polishing rates across different regions of the wafer surface can be reduced, thereby improving polishing uniformity. The design of the insulating strip 131 allows for differentiated processing of specific areas of the wafer, enhancing control over local polishing effects, especially in edge areas.

[0043] Please refer to Figure 1 , Figure 2 and Figure 6 In this embodiment of the application, an insulating ring 135 is provided between adjacent conductive film strips 130, the inner ring of the conductive film strip 130 is the positive electrode 132 of the film strip, and the outer ring of the conductive film strip 130 is the negative electrode 133 of the film strip.

[0044] Specifically, an insulating ring 135 is provided between adjacent conductive film strips 130, allowing each conductive film strip 130 to independently control its electric field. Since the inner ring serves as the positive electrode 132 and the outer ring as the negative electrode 133, this configuration allows for different electric field intensities in different regions of the wafer surface. By changing the voltage of the inner ring (positive electrode 132) and outer ring (negative electrode 133) of the conductive film strip 130, the electric field intensity in the corresponding region can be precisely adjusted. This adjustability enables localized control of the abrasive particle concentration on the wafer surface, optimizing the material removal rate during chemical mechanical polishing.

[0045] Please refer to Figures 1 to 3 In this embodiment of the application, the carrier 120 is further provided with a connection terminal 140, and each of the conductive film strips 130 is electrically connected to the connection terminal 140. The connection terminal 140 is used to connect an external power source to energize the conductive film strips 130.

[0046] Specifically, the main function of the connecting terminal 140 is to provide a stable electrical connection point for the conductive film strip 130, enabling it to connect to an external power source. By electrically connecting each conductive film strip 130 to its corresponding electrical connection point on the connecting terminal 140, independent control of the conductive film strip 130 can be achieved. Since each conductive film strip 130 is connected to an external power source through the connecting terminal 140, different voltages or currents can be applied to each conductive film strip 130, thereby achieving precise control over the concentration of abrasive particles in different areas of the wafer surface. The connecting terminal 140 provides a stable mechanical and electrical interface, ensuring that the connection between the conductive film strip 130 and the power source is not interrupted due to mechanical vibration or pressure changes during chemical mechanical polishing, thus improving the stability and reliability of the polishing process.

[0047] It should be noted that the connecting terminal 140 can be located on the side of the carrier 120 or inside the carrier 120. There are no specific restrictions here. It can be flexibly set according to the actual situation and actual needs, as long as each conductive film strip 130 is electrically connected to the corresponding electrical connection point on the connecting terminal 140.

[0048] Please refer to section 1 to... Figure 6 This application also provides a chemical mechanical polishing apparatus, including a machine base 200, a lifting frame 210, a rotary polishing table 220, a polishing slurry feeding assembly 230, an electrostatic generator assembly 240, and a polishing head 100 as described above. The polishing head 100 further includes a connecting terminal 140 disposed on the carrier 120, and the connecting terminal 140 is electrically connected to each of the conductive film strips 130. The rotary polishing table 220 is disposed on the machine base 200. The polishing head 100 is connected to the machine base 200 through the lifting frame 210, and the polishing head 100 and the rotary polishing table 220 are disposed opposite each other. The polishing slurry feeding assembly 230 is disposed on the machine base 200 and located on one side of the rotary polishing table 220, for spraying polishing slurry onto the rotary polishing table 220. The electrostatic generator assembly 240 is electrically connected to the connecting terminal 140 and is used to adjust the voltage of the conductive film strips 130.

[0049] Specifically, the machine base 200 is the basic structure of the chemical mechanical polishing (CMP) apparatus, used to support and fix other components, such as the lifting frame 210 and the rotary polishing table 220. It provides a stable platform to ensure the stability and reliability of the polishing process. The lifting frame 210 connects the polishing head 100 and the machine base 200, allowing adjustment of the height and position of the polishing head 100 to accommodate different wafer thicknesses and polishing requirements. The rotary polishing table 220 is mounted on the machine base 200 for polishing the wafer and rotates during the polishing process to ensure uniform contact between the polishing slurry and the wafer surface. The polishing slurry feeding assembly 230 is responsible for spraying polishing slurry onto the rotary polishing table 220, ensuring uniform distribution of the polishing slurry. The electrostatic generator assembly 240 is electrically connected to the connecting terminal 140 and is used to adjust the voltage of the conductive thin film strip 130 to form electric fields of different intensities, thereby controlling the electric field strength on the wafer surface and influencing the distribution of charged abrasive particles.

[0050] It should be noted that the electrostatic generator can be installed on the machine base 200 or integrated on the polishing head 100. There are no specific restrictions here, and it can be flexibly set according to the actual situation and needs.

[0051] In this embodiment, a control processing component 250 is also included, which is electrically connected to the electrostatic generator component 240 and is used to control the electrostatic generator component 240 to adjust the voltage of the conductive film strip 130. When the wafer requires a region with a high concentration of polishing slurry, the control processing component 250 controls the electrostatic generator component 240 to increase the voltage of the corresponding conductive film strip 130; when the wafer requires a region with a low concentration of polishing slurry, the control processing component 250 controls the electrostatic generator component 240 to decrease the voltage of the corresponding conductive film strip 130.

[0052] Specifically, the control processing component 250 is the brain of the chemical mechanical polishing apparatus, responsible for receiving operating instructions and feedback signals, and controlling the actions of other components based on this information. It is electrically connected to the electrostatic generator component 240, adjusting the output of the electrostatic generator component 240 according to the set polishing requirements. The electrostatic generator component 240 adjusts the voltage of the conductive thin film strip 130 according to the instructions from the control processing component 250. This adjustment affects the electric field strength on the conductive thin film strip 130, thereby affecting the distribution of abrasive particles on the wafer surface.

[0053] When a high concentration of polishing slurry is required in an area, the control processing component 250 instructs the electrostatic generator 240 to increase the voltage of the corresponding conductive film strip 130, thereby strengthening the electric field and attracting more charged abrasive particles to that area, thus improving the local material removal rate. Conversely, when a low concentration of polishing slurry is required in an area, the control processing component 250 instructs the electrostatic generator 240 to decrease the voltage of the corresponding conductive film strip 130, thereby weakening the electric field, reducing the concentration of charged abrasive particles, and decreasing the local material removal rate.

[0054] In this embodiment, by dynamically adjusting the voltage of the conductive thin film strip 130, the concentration of the polishing slurry can be precisely controlled according to the actual needs of different areas on the wafer surface, thereby improving the polishing uniformity of the entire wafer surface. The coordinated operation of the processing component and the electrostatic generation component 240 makes it possible to perform differentiated processing on specific areas of the wafer, enhancing the controllability of local polishing effects.

[0055] In this embodiment, a rate detection component 260 is also included, which is disposed on the machine tool 200 and located on one side of the rotary polishing stage 220. The rate detection component 260 is electrically connected to the control processing component 250. The rate detection component 260 is used to detect the polishing rate of the wafer and send the detection result to the control processing module. The control processing module receives the detection result and controls the electrostatic generator component 240 to adjust the voltage of the conductive thin film strip 130 according to the detection result.

[0056] Specifically, the rate detection component 260 is mounted on the machine tool 200, adjacent to the rotary polishing stage 220, for real-time monitoring of the wafer polishing rate. This is typically achieved using a non-contact sensor, such as utilizing optical or electromagnetic principles to detect polishing changes on the wafer surface. The rate detection component 260 transmits the detected polishing rate data to the control processing component 250 via an electrical connection. This data may include material removal rate or other parameters related to the polishing rate.

[0057] The control processing component 250 receives the detection results sent by the rate detection component 260 and dynamically adjusts the CMP process based on this data. If the detected polishing rate is lower than expected, the control processing component 250 may instruct the electrostatic generator 240 to increase the voltage of the conductive thin film strip 130 to attract more abrasive particles to the wafer surface and improve the removal rate.

[0058] The electrostatic generator 240 adjusts the voltage of the conductive thin film strip 130 according to the instructions of the control processing unit 250. This adjustment can change the intensity of the electric field, thereby affecting the behavior and distribution of the abrasive particles and achieving precise control of the polishing rate.

[0059] In this embodiment, real-time monitoring and adjustment of the polishing rate helps ensure polishing uniformity across different areas of the wafer surface, improving overall polishing quality. By precisely controlling the voltage of the conductive film strip 130, the material removal rate can be adjusted according to the actual needs of different areas on the wafer surface, avoiding over-polishing or under-polishing. Real-time adjustment of the CMP process can reduce rework caused by uneven polishing, improving production efficiency and yield.

[0060] This application embodiment also provides a polishing slurry distribution adjustment system, including the chemical mechanical polishing device as described above; a rate detection component 260 is provided, the rate detection component 260 is used to detect the polishing rate of the wafer and send the detection result to the control processing module; a control processing component 250 is also provided, used to receive the detection result and control the electrostatic generation component 240 to adjust the voltage of the conductive thin film strip 130 according to the detection result.

[0061] Specifically, the rate detection component 260 is mounted on the machine tool 200, adjacent to the rotary polishing stage 220, and is used to monitor the polishing rate of the wafer in real time. The detected polishing rate data is transmitted to the control processing component 250 via an electrical connection. The control processing component 250 receives the detection results sent by the rate detection component 260 and dynamically adjusts the CMP process based on this data. The electrostatic generator component 240 adjusts the voltage of the conductive thin film strip 130 according to the instructions of the control processing component 250.

[0062] In this embodiment, the integrated detection and control system improves the intelligence level of CMP equipment, making the polishing process more automated and precise.

[0063] The above description is merely a specific implementation of the embodiments of this application, but the protection scope of the embodiments of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the embodiments of this application should be covered within the protection scope of the embodiments of this application. Therefore, the protection scope of the embodiments of this application should be determined by the protection scope of the claims.

Claims

1. A polishing head, characterized by, The application relates to a rotating shaft, a carrier and a conductive film belt. The rotating shaft is connected to the carrier and used for driving the carrier to rotate. The carrier is used for fixing a wafer. The conductive film belt has a plurality of strips, the strips are arranged concentrically on the bottom surface of the carrier, the diameters of the strips are different, and the strips are arranged at intervals.

2. The polishing head of claim 1, wherein The conductive film belt is used for electrification and control of the concentration of grinding particles on the wafer surface. An insulating belt is arranged on the conductive film belt. One side of the insulating belt is a positive electrode of the film belt, and the positive electrode is electrically connected to the conductive film belt.

3. The polishing head of claim 2, wherein, The other side of the insulating belt is a negative electrode of the film belt, and the negative electrode is electrically connected to the conductive film belt.

4. The polishing head of claim 2, wherein The insulating belts are arranged along a first direction and a second direction, n insulating belts are arranged at intervals, and the conductive film belt is divided into n concentration adjusting areas, wherein the first direction and the second direction are perpendicular to each other.

5. The polishing head of claim 1, wherein, An insulating belt is arranged every 30-60 degrees along the arc of the conductive film belt, and the insulating belts divide the conductive film belt into concentration adjusting areas.

6. The polishing head of any one of claims 1-5, wherein, An insulating ring is arranged between adjacent conductive film belts, the inner ring of the conductive film belt is a positive electrode of the film belt, and the outer ring of the conductive film belt is a negative electrode of the film belt.

7. A chemical mechanical polishing apparatus characterized by comprising: The carrier is further provided with a connecting terminal, each conductive film belt is electrically connected to the connecting terminal, and the connecting terminal is used for external connection of a power supply to electrify the conductive film belt. The application relates to a polishing head, a polishing machine, a lifting frame, a rotating polishing table, a polishing liquid feeding assembly, an electrostatic generating assembly, and a polishing head as claimed in any one of claims 1-6. The rotating polishing table is arranged on the polishing machine. The polishing head is connected to the polishing machine through the lifting frame, and the polishing head is arranged opposite to the rotating polishing table. The polishing liquid feeding assembly is arranged on the polishing machine and located on one side of the rotating polishing table, and is used for spraying polishing liquid on the rotating polishing table.

8. The chemical mechanical polishing apparatus of claim 7, wherein The electrostatic generating assembly is electrically connected to the connecting terminal and is used for adjusting the voltage of the conductive film belt. The application further comprises a control processing assembly arranged on the polishing machine and electrically connected to the electrostatic generating assembly, and the control processing assembly is used for controlling the electrostatic generating assembly to adjust the voltage of the conductive film belt. When the wafer needs a region with high polishing liquid concentration, the control processing assembly controls the electrostatic generating assembly to increase the voltage of the corresponding conductive film belt.

9. The chemical mechanical polishing apparatus of claim 8, wherein When the wafer needs a region with low polishing liquid concentration, the control processing assembly controls the electrostatic generating assembly to decrease the voltage of the corresponding conductive film belt. The application further comprises a speed detection assembly arranged on the polishing machine and located on one side of the rotating polishing table, and the speed detection assembly is electrically connected to the control processing assembly. The speed detection assembly is used for detecting the polishing speed of the wafer and sending the detection result to the control processing assembly. The control processing module receives the detection result and controls the electrostatic generating assembly to adjust the voltage of the conductive film strip according to the detection result.

10. A polishing fluid distribution adjustment system characterized by, The chemical mechanical polishing device comprises the chemical mechanical polishing device according to any one of claims 7-9. A rate detection assembly is provided for detecting the polishing rate of the wafer and sending the detection result to the control processing module. A control processing assembly is also provided for receiving the detection result and controlling the electrostatic generating assembly to adjust the voltage of the conductive film strip according to the detection result.

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