Ideal diode package assembly

Abstract

The utility model discloses an ideal diode packaging assembly. The ideal diode packaging assembly comprises a substrate; the switch structure comprises a connecting assembly, a control chip, a switch chip and a capacitor element, the switch chip is provided with a first electrode arranged on one side face and a second electrode and a control electrode which are arranged on the other side face, and the connecting assembly comprises a plurality of first conductive structures embedded in the substrate and a plurality of second conductive structures protruding out of the surface of the substrate; the control chip is connected to the first electrode and the capacitor element through the first conductive structure, and the control chip is connected to the second electrode and the control electrode through the cooperation of the first conductive structure and the second conductive structure. Wherein the first conductive structure is a metal wire structure, and the second conductive structure is a strip bonding sheet structure. According to the ideal diode packaging assembly provided by the invention, the elements are simply connected, and the overall packaging difficulty and cost are reduced.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor packaging, and particularly relates to an ideal diode packaging assembly. BACKGROUND

[0002] In a semiconductor switch module, a Schottky diode is usually applied as a main element of the switch module, and the Schottky diode has the advantages of low cost of crystal grains under current application, simple packaging structure and low packaging cost. However, with the increasing demand of the market for large current, low temperature rise, high safety and high energy efficiency, especially for the photovoltaic power generation industry, the switch module with the Schottky diode cannot meet the above-mentioned requirements.

[0003] At present, an ideal diode is usually used to replace the Schottky diode as the main element of the switch module, and the ideal diode has the advantages of lower temperature rise, smaller reverse leakage current and higher reverse bias voltage capacity compared with the Schottky diode. However, the ideal diode has more elements, and the traditional wire bonding method is used to electrically connect the multiple elements of the ideal diode, which leads to the problems of complex packaging and high packaging cost. CONTENT OF THE INVENTION

[0004] The application provides an ideal diode packaging assembly, and the connection between the elements of the ideal diode is simple, thereby reducing the overall packaging difficulty and cost.

[0005] The application provides an ideal diode packaging assembly, which comprises a substrate, a switch structure, a control chip, a switch chip and a capacitor element, the switch chip has a first electrode arranged on one side face and a second electrode and a control electrode arranged on the other side face, the connection assembly comprises a plurality of first conductive structures embedded in the interior of the substrate and a plurality of second conductive structures protruding from the surface of the substrate, the control chip is connected to the first electrode and the capacitor element through the first conductive structures, and the control chip is connected to the second electrode and the control electrode through the cooperation of the first conductive structures and the second conductive structures; wherein the first conductive structures are metal wire structures, and the second conductive structures are strip bonding sheet structures.

[0006] The ideal diode packaging assembly as above, wherein a plurality of connection holes for arranging pads are formed on the substrate, the connection holes extend from the surface of the substrate to the first conductive structures, the control chip, the switch chip and the capacitor element are all welded and electrically connected to the plurality of first conductive structures through the pads in the plurality of connection holes.

[0007] The ideal diode package assembly as claimed in the above, wherein the plurality of connecting holes include a first lead-out hole, a second lead-out hole and a conductive connecting hole, the first lead-out hole is connected to the first electrode through the first conductive structure, the second lead-out hole is connected to the second electrode through the first conductive structure and the second conductive structure, and the conductive connecting hole is in communication between the switch structure and the first conductive structure and between the second conductive structure and the first conductive structure.

[0008] The ideal diode package assembly as claimed in the above, wherein the first lead-out hole and the second lead-out hole are respectively formed on different sides of the switch structure.

[0009] The ideal diode package assembly as claimed in the above, wherein the control chip, the switch chip and the capacitor element are all arranged on the same side of the substrate, the capacitor element is connected in parallel to the control chip, and the first electrode, the second electrode and the control electrode of the switch chip are all connected to the control chip.

[0010] The ideal diode package assembly as claimed in the above, wherein the switch chip, the capacitor element and the control chip are sequentially arranged along a first direction, the switch chip and the control chip are arranged at intervals in the first direction, and the capacitor element at least partially overlaps the switch chip in the first direction; or the capacitor element is arranged at intervals with the switch chip in the first direction.

[0011] The ideal diode package assembly as claimed in the above, wherein the switch chip and the control chip are arranged at intervals along a first direction, the capacitor element and the control chip are sequentially arranged along a second direction, and in the second direction, the switch chip is within the coverage range of the overall structure formed by the control chip and the capacitor element.

[0012] The ideal diode package assembly as claimed in the above, wherein the control chip and the switch chip are respectively arranged on opposite sides of the substrate, the capacitor element is connected in parallel to the control chip, and the first electrode, the second electrode and the control electrode of the switch chip are all connected to the control chip.

[0013] The ideal diode package assembly as claimed in the above, wherein the control chip includes a first base layer and an isolation layer arranged in layers, the isolation layer has a plurality of first accommodating portions arranged at intervals therein, the first base layer has a plurality of metal layer structures extending inwardly from its surface, the plurality of metal layer structures are arranged in position opposite to the plurality of first accommodating portions, each first accommodating portion is provided with a soldering structure, each soldering structure is arranged protruding from the surface of the isolation layer, and each soldering structure is in conductive connection with the corresponding metal layer structure.

[0014] The ideal diode package assembly as claimed in the above, wherein the switch chip includes a first electrode, a second base layer, a second electrode and a passivation layer arranged in layers, the control electrode is arranged in the same layer as the second electrode, the passivation layer has a plurality of second accommodating portions for accommodating chemical plating layers, the control electrode and the second electrode are arranged in correspondence with at least one second accommodating portion and are in conductive connection with the corresponding chemical plating layer.

[0015] The ideal diode packaging assembly of the present application comprises a substrate and a switch structure, the switch structure comprises a connecting assembly, a control chip, a switch chip and a capacitor element, the control chip, the switch chip and the capacitor element can form an ideal diode through the connection of the connecting assembly, the connecting assembly comprises a plurality of first conductive structures and a plurality of second conductive structures, the first conductive structure is a metal wire structure embedded in the interior of the substrate, and the second conductive structure is a ribbon bonding piece structure arranged protruding on the surface of the substrate, the control chip is connected to the first electrode on one side of the switch chip and the capacitor element through the first conductive structure, and the control chip is connected to the second electrode and the control electrode on the other side of the switch chip through the cooperation of the first conductive structure and the second conductive structure. Therefore, the first conductive structure is entirely in the interior of the substrate, the wiring connection is carried out in the interior of the substrate, and only the second conductive structure of the ribbon bonding piece structure is used to connect the electrodes of the switch chip on the surface of the substrate, so that the overall structure of the connecting assembly is simple, the number of the protruding second conductive structure is small and deformation is not easy to occur, the overall packaging difficulty of the substrate and the switch structure is low, and the packaging cost is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly introduced below. Those skilled in the art can also obtain other drawings according to these drawings without creating any creative labor.

[0017] Figure 1 It is an internal structure schematic diagram of the ideal diode packaging assembly of the present application embodiment.

[0018] Figure 2 It is a sectional view of the internal structure of the ideal diode packaging assembly of the present application embodiment.

[0019] Figure 3 It is an internal structure schematic diagram of the substrate of the ideal diode packaging assembly of the present application embodiment.

[0020] Figure 4 It is a sectional view of the substrate of the ideal diode packaging assembly of the present application embodiment.

[0021] Figure 5 It is an overall structure schematic diagram of the ideal diode packaging assembly of the present application embodiment.

[0022] Figure 6 It is an overall structure sectional view of the ideal diode packaging assembly of the present application embodiment.

[0023] Figure 7 It is a structure schematic diagram of the second ideal diode packaging assembly of the present application embodiment.

[0024] Figure 8 A structure schematic diagram of a third ideal diode packaging assembly embodiment of the present application;

[0025] Figure 9 A structure schematic diagram of a fourth ideal diode packaging assembly embodiment of the present application;

[0026] Figure 10 A schematic diagram of a metal layer structure and an isolation layer of a control chip of an ideal diode packaging assembly embodiment of the present application;

[0027] Figure 11 A schematic diagram of a plating seed layer of a control chip of an ideal diode packaging assembly embodiment of the present application;

[0028] Figure 12 A schematic diagram of a photoresist layer of a control chip of an ideal diode packaging assembly embodiment of the present application;

[0029] Figure 13 A filling schematic diagram of a solder structure of a control chip of an ideal diode packaging assembly embodiment of the present application;

[0030] Figure 14 A whole structure schematic diagram of a control chip of an ideal diode packaging assembly embodiment of the present application;

[0031] Figure 15 A whole structure schematic diagram of a switch chip of an ideal diode packaging assembly embodiment of the present application.

[0032] BRIEF DESCRIPTION OF THE DRAWINGS

[0033] 100, substrate; 200, switch structure; 300, packaging structure;

[0034] 10, connecting assembly; 11, first conductive structure; 12, second conductive structure; 20, control chip; 21, first base layer; 211, metal layer structure; 22, isolation layer; 221, first accommodating portion; 23, solder structure; 231, copper column; 232, soldering portion; 24, plating seed layer; 25, photoresist layer; 30, switch chip; 31, first electrode; 32, second electrode; 33, control electrode; 34, second base layer; 35, passivation layer; 351, second accommodating portion; 36, chemical plating layer; 40, capacitor element; 50, connecting hole; 51, first lead-out hole; 52, second lead-out hole; 53, conductive connecting hole;

[0035] X, first direction; Y, second direction. DETAILED DESCRIPTION

[0036] The features and exemplary embodiments of various aspects of the present application will be described below in detail, in order to make the purposes, technical solutions and advantages of the present application more clear and apparent, the present application will be further described in detail below in combination with the drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, but not to limit the present application. For those skilled in the art, the present application can be implemented without some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by showing examples of the present application.

[0037] With the popularity of clean energy, the application of photovoltaic power generation is increasing, and the demand for photovoltaic bypass junction boxes is also increasing. The photovoltaic bypass is a backup circuit in the photovoltaic circuit, and a junction box is needed to control its on-off in time. When the main circuit of the photovoltaic circuit is normal, the junction box controls the photovoltaic bypass to be disconnected, and when part of the main circuit of the photovoltaic circuit fails, the junction box controls the photovoltaic bypass to be turned on to ensure that the photovoltaic circuit is turned on as a whole and works normally.

[0038] Currently, the junction box of mainstream photovoltaic module manufacturers uses a Schottky diode. The Schottky diode is composed of an N-type silicon wafer and a metal, and then a metal plate is welded on the positive and negative electrodes. The Schottky diode has the advantages of simple structure, easy-to-implement process, mature technology and low processing difficulty. However, the traditional Schottky diode will cause energy loss due to voltage drop, which converts electrical energy into heat energy. Therefore, under the condition of forward current of the Schottky diode, the heat generation is serious. Moreover, the reverse blocking leakage current of the Schottky diode is relatively large under high temperature, and the reverse bias withstand voltage is also relatively low, which cannot be applied to high-voltage scenes.

[0039] In order to solve the problems of the Schottky diode, the Schottky diode in the photovoltaic bypass junction box is currently replaced by an ideal diode. The ideal diode is composed of an integrated circuit (IC) chip, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) chip and a capacitor. The ideal diode has the characteristics of low temperature rise, low cost in large current application scenarios, small energy loss, small reverse blocking leakage current under high temperature and high reverse blocking withstand voltage. However, the current ideal diode is packaged by SIP (System In a Package) technology. This packaging technology realizes the electrical connection between elements by wire bonding. Multiple bonding wires are connected to the surface of different elements, which is not convenient for the overall packaging of the elements after connection, and the packaging cost is high. In order to solve the above packaging problem, an ideal diode packaging assembly is provided in the embodiments of the present application. The ideal diode packaging assembly will be described below in combination with Figures 1 to 15The ideal diode packaging assembly of the embodiment of the present application is specifically described.

[0040] As shown in Figures 1 to 15 , the embodiment of the present application provides an ideal diode packaging assembly, which comprises a substrate 100, a switch structure 200, the switch structure 200 comprising a connecting assembly 10, a control chip 20, a switch chip 30 and a capacitor element 40, the switch chip 30 having a first electrode 31 arranged on one side surface and a second electrode 32 and a control electrode 33 arranged on the other side surface, the connecting assembly 10 comprising a plurality of first conductive structures 11 embedded in the interior of the substrate 100 and a plurality of second conductive structures 12 protruding from the surface of the substrate 100, the control chip 20 being connected to the first electrode 31 and the capacitor element 40 through the first conductive structures 11, and the control chip 20 being connected to the second electrode 32 and the control electrode 33 through the first conductive structures 11 and the second conductive structures 12 in cooperation; wherein the first conductive structures 11 are metal wire structures, and the second conductive structures 12 are strip bonding sheet structures.

[0041] In specific implementation, as shown in Figure 5 and Figure 6 , the ideal diode packaging assembly further comprises a packaging structure 300, the packaging structure 300 being arranged on the surface of the substrate 100 and capable of packaging the control chip 20, the switch chip 30, the capacitor element 40 and the plurality of second conductive structures 12 protruding from the surface of the substrate 100, so as to realize protection and fixation of the elements.

[0042] It should be noted that the control chip 20 in the embodiment of the present application can be, but is not limited to, an IC chip, and the switch chip 30 can be, but is not limited to, a MOSFET chip, and the IC chip, the MOSFET chip and the capacitor element 40 can be combined to form an ideal diode.

[0043] Specifically, the packaging structure 300 is made of plastic packaging material, which can have a good packaging effect on the elements of the ideal diode packaging assembly, has good packaging stability, and the plastic packaging material is convenient for packaging and can be set in different shapes according to the packaging requirements.

[0044] As shown in Figures 1 to 4As shown, the ideal diode packaging assembly of the embodiment of the present application comprises a substrate 100 and a switch structure 200, the switch structure 200 comprises a connecting assembly 10, a control chip 20, a switch chip 30 and a capacitor element 40, the control chip 20, the switch chip 30 and the capacitor element 40 can form an ideal diode through the connection of the connecting assembly 10, wherein the control chip 20 has a plurality of connection points, two ends of the capacitor element 40 are respectively conductively connected with two connection points of the control chip 20, a first electrode 31, a second electrode 32 and a control electrode 33 of the switch chip 30 are respectively conductively connected with three connection points of the control chip 20, thereby forming the overall structure of the ideal diode, the capacitor element 40 is used for storing electric energy and supplying power for the control chip 20, the first electrode 31 and the second electrode 32 of the switch chip 30 are respectively positive and negative electrodes thereof, and the control chip 20 can control the on-off between the first electrode 31 and the second electrode 32 through the control electrode 33, thereby realizing the switching function of the ideal diode.

[0045] The connecting assembly 10 comprises a plurality of first conductive structures 11 and a plurality of second conductive structures 12, the first conductive structures 11 are metal wire structures embedded in the interior of the substrate 100, and the second conductive structures 12 are strip bonding piece structures arranged on the surface of the substrate 100, such as copper pieces or copper clips which have conductive stability and are not easy to deform; the first electrode 31 of the switch chip 30 is arranged on the side facing the substrate 100, and the second electrode 32 and the control electrode 33 are arranged on the side of the switch chip 30 facing away from the substrate 100, so that the control chip 20 can be connected to the first electrode 31 and the capacitor element 40 through the first conductive structures 11, and be connected to the second electrode 32 and the control electrode 33 through the cooperation of the first conductive structures 11 and the second conductive structures 12.

[0046] Therefore, the first conductive structures 11 are all in the interior of the substrate 100, the wiring connection between the control chip 20 and the first electrode 31 and the capacitor element 40 is carried out in the interior of the substrate 100, and the second electrode 32 and the control electrode 33 of the switch chip 30 are connected only through the second conductive structures 12 of the strip bonding piece structure on the surface of the substrate 100, so that the overall structure of the connecting assembly 10 is simple, the number of the second conductive structures 12 arranged protruding is small and the second conductive structures 12 are not easy to deform, the overall packaging difficulty of the substrate 100 and the switch structure 200 is low, and the packaging cost is reduced.

[0047] As shown, Figures 1 to 4 The ideal diode packaging assembly of the embodiment of the present application, wherein a plurality of connecting holes 50 for arranging pads are arranged on the substrate 100, the connecting holes 50 extend from the surface of the substrate 100 to the first conductive structures 11, and the control chip 20, the switch chip 30 and the capacitor element 40 are all welded and conductively connected with the plurality of first conductive structures 11 through the pads in the plurality of connecting holes 50.

[0048] In implementation, the connection hole 50 extends from the surface of the substrate 100 to the first conductive structure 11, realizing the communication between the first conductive structure 11 and the surface of the substrate 100, and a pad is arranged in the connection hole 50, so that the first conductive structure 11 can be welded with the pad and welded or conductively connected with the control chip 20, the switch chip 30, the capacitor element 40, the second conductive structure 12 or other elements on the surface of the substrate 100, thereby realizing the conductive connection between the internal wiring of the substrate 100 and the surface elements, without the need for wire bonding on the surface of the elements, thereby reducing the packaging difficulty and packaging cost.

[0049] As shown in FIGS. 1, 2 and 3, the ideal diode packaging assembly of the present application is shown, wherein a plurality of connection holes 50 are arranged on the surface of the substrate 100, and the connection holes 50 include a first lead-out hole 51, a second lead-out hole 52 and a conductive connection hole 53. Figure 3 and Figure 4 As shown in FIGS. 1, 2 and 3, the ideal diode packaging assembly of the present application is shown, wherein a plurality of connection holes 50 are arranged on the surface of the substrate 100, and the connection holes 50 include a first lead-out hole 51, a second lead-out hole 52 and a conductive connection hole 53.

[0050] In implementation, the first lead-out hole 51, the second lead-out hole 52 and the conductive connection hole 53 each have a pad therein, and the control chip 20, the first electrode 31 of the switch chip 30 and the capacitor element 40 are conductively connected with the first conductive structure 11 through the pad in the conductive connection hole 53, and the second electrode 32 and the control electrode 33 of the switch chip 30 are connected to one end of the second conductive structure 12, and the other end of the second conductive structure 12 is conductively connected with the first conductive structure 11 through the pad in the conductive connection hole 53, thereby realizing the connection path from the second electrode 32 and the control electrode 33 to the control chip 20. Therefore, the conductive connection hole 53 can be used to communicate the overall circuit of the ideal diode, so as to realize the switching effect of the control circuit of the ideal diode.

[0051] The first lead-out hole 51 is connected to the first electrode 31 through the first conductive structure 11 and the conductive connection hole 53 in sequence, and the second lead-out hole 52 is connected to the second electrode 32 through the first conductive structure 11, the conductive connection hole 53 and the second conductive structure 12 in sequence, and since the first lead-out hole 51 and the second lead-out hole 52 each have a pad therein, they can be used as the lead-out electrodes of the switch structure 200 to be connected with the external circuit, so that the external circuit can be connected to the positive and negative electrodes of the switch structure 200, thereby realizing the on-off control of the switch structure 200 on the external circuit.

[0052] Specifically, when the packaging structure 300 encapsulates the control chip 20, the switch chip 30, the capacitor element 40, and the multiple second conductive structures 12 protruding from the surface of the substrate 100, the first lead hole 51 and the second lead hole 52 are outside the packaging range of the packaging structure 300, so that the external circuit can be directly conductively connected to the first lead hole 51 and the second lead hole 52 without the need to set up other conductive connection structures, making the setting and connection of the ideal diode packaging assembly more convenient.

[0053] In the ideal diode package assembly of this application embodiment, the first lead-out hole 51 and the second lead-out hole 52 are respectively opened on different sides of the switch structure 200. This positioning facilitates the conductive connection between the external circuit and the pads in the first lead-out hole 51 and the second lead-out hole 52 without mutual interference. Furthermore, when the first lead-out hole 51 and the second lead-out hole 52 are connected to the first electrode 31 and the second electrode 32 through the first conductive structure 11, the traces of the first conductive structure 11 inside the substrate 100 will not interfere with each other, thereby avoiding short circuits between the first electrode 31 and the second electrode 32.

[0054] Specifically, the first lead-out hole 51 and the second lead-out hole 52 are respectively located on opposite sides of the switch structure 200. This arrangement further avoids mutual interference between the two and prevents short circuits.

[0055] like Figure 1 As shown in the embodiment of this application, the ideal diode package assembly includes a control chip 20, a switch chip 30, and a capacitor element 40, all disposed on the same side of the substrate 100. The capacitor element 40 is connected in parallel to the control chip 20, and the first electrode 31, the second electrode 32, and the control electrode 33 of the switch chip 30 are all connected to the control chip 20.

[0056] In practice, the control chip 20, the switch chip 30, and the capacitor element 40 are all located on the same side of the substrate 100, which makes it easier for the packaging structure 300 to uniformly package each element. Only one side of the substrate 100 needs to be packaged, which reduces the difficulty of packaging and improves the production efficiency of the ideal diode packaging assembly.

[0057] like Figure 1 As shown, in the first embodiment of this application, the switch chip 30, the capacitor element 40 and the control chip 20 are arranged sequentially along the first direction X. The switch chip 30 and the control chip 20 are spaced apart in the first direction X, and the capacitor element 40 overlaps with the switch chip 30 at least partially in the first direction X.

[0058] In specific implementation, the switch chip 30 and the control chip 20 are spaced apart in the first direction X, which can avoid the excessive heat generated by the switch chip 30 from affecting and interfering with the control chip 20. In addition, the capacitor element 40 overlaps with the switch chip 30 at least partially in the first direction X, making reasonable use of the space of the switch chip 30 on the second direction Y side. This can avoid the overall coverage area of ​​the switch structure 200 being too large, thus ensuring the miniaturization of the ideal diode package assembly.

[0059] like Figure 7 As shown, in the second embodiment of this application, the switch chip 30, the capacitor element 40 and the control chip 20 are arranged sequentially along the first direction X. The switch chip 30 and the control chip 20 are spaced apart in the first direction X, and the capacitor element 40 is also spaced apart from the switch chip 30 in the first direction X.

[0060] In practice, this arrangement places the switch chip 30 and the control chip 20 on opposite sides of the capacitor element 40, further increasing the distance between them. This further avoids the impact of the heat generated by the switch chip 30 on the control chip 20, ensuring the performance of the control chip 20 and the overall performance of the ideal diode package assembly.

[0061] like Figure 8 As shown, in the third embodiment of this application, the switch chip 30 and the control chip 20 are arranged at intervals along the first direction X, and the capacitor element 40 and the control chip 20 are arranged sequentially along the second direction Y. In the second direction Y, the switch chip 30 is within the coverage area of ​​the overall structure formed by the control chip 20 and the capacitor element 40.

[0062] In practice, the capacitor element 40 and the control chip 20 are both located on one side of the switch chip 30 in the first direction X, and the length range of the arrangement of the capacitor element 40 and the control chip 20 in the second direction Y covers the length range of the switch chip 30 in the second direction Y. This arrangement allows the ideal diode package assembly to be compactly arranged in the second direction Y with a small overall coverage area, thus ensuring the miniaturization of the ideal diode package assembly.

[0063] Furthermore, in this embodiment, the switch chip 30 and the control chip 20 are arranged at intervals along the first direction X, so that the heat generated by the switch chip 30 will not excessively affect the control chip 20.

[0064] like Figure 9 As shown, in the fourth embodiment of this application, the control chip 20 and the switch chip 30 are respectively disposed on opposite sides of the substrate 100, the capacitor element 40 is connected in parallel to the control chip 20, and the first electrode 31, the second electrode 32 and the control electrode 33 of the switch chip 30 are all connected to the control chip 20.

[0065] In practice, the control chip 20 and the switch chip 30 are respectively disposed on opposite sides of the substrate 100. The substrate 100 can isolate the heat of the switch chip 30 on one side. Therefore, when the switch chip 30 heats up, it will not affect the control chip 20 on the other side, nor will it affect the overall performance of the control chip 20 and the ideal diode package assembly.

[0066] It should be noted that in the fourth embodiment of this application, the capacitor element 40 can be disposed on any side of the substrate 100, and the arrangement and placement of the control chip 20, the switch chip 30 and the capacitor element 40 in the setting plane can adopt any of the methods in the first three embodiments.

[0067] like Figure 14 As shown in the embodiment of this application, the ideal diode packaging assembly includes a control chip 20 comprising a first base layer 21 and an isolation layer 22 stacked together. The isolation layer 22 has a plurality of first receiving portions 221 spaced apart from each other. The first base layer 21 has a plurality of metal layer structures 211 extending inward from its surface. The plurality of metal layer structures 211 are positioned opposite to the plurality of first receiving portions 221. Each first receiving portion 221 is provided with a welding structure 23. Each welding structure 23 protrudes from the surface of the isolation layer 22 and is electrically connected to the corresponding metal layer structure 211.

[0068] In specific implementation, the first base layer 21 is a substrate made of silicon material. An isolation layer 22 is provided on the surface of the first base layer 21. The isolation layer 22 has a plurality of first receiving portions 221 arranged at intervals. A plurality of welding structures 23 are correspondingly disposed in the plurality of first receiving portions 221 and connected to the metal layer structure 211 in the first base layer 21 to form a plurality of contact points of the control chip 20. Since each welding structure 23 protrudes from the surface of the isolation layer 22, it is convenient for the contact points to be welded to the pads in the connection hole 50 to achieve conductive connection. Furthermore, adjacent welding structures 23 are isolated by the isolation layer 22 to avoid short circuits.

[0069] Specifically, the isolation layer 22 is made of a polyimide material, has the characteristics of high temperature resistance, can be subjected to photolithography and form a plurality of first accommodating portions 221; the side of the isolation layer 22 away from the first base layer 21 and the surface of each metal layer structure 211 are further provided with a electroplating seed layer 24, and the electroplating seed layer 24 can facilitate the setting of the solder structure 23, wherein each part of the isolation layer 22 is only provided with the electroplating seed layer 24 on the surface of the part close to the first accommodating portion 221, and is not provided with the electroplating seed layer 24 on the entire surface, so as to avoid short circuit between adjacent solder structures 23, and part of the solder structure 23 can be arranged against the surface of the isolation layer 22 to form a stepped structure, which improves the setting stability of the solder structure 23; the solder structure 23 includes a copper column 231 and a solder portion 232, the copper column 231 is arranged in the first accommodating portion 221 and is in conductive connection with the metal layer structure 211, and the solder portion 232 is a partial spherical structure formed by tin solder and is arranged at the end of the copper column 231, facilitating soldering connection.

[0070] The passivation layer can be arranged between the first base layer 21 and the isolation layer 22.

[0071] The manufacturing process of the control chip 20 of the ideal diode packaging assembly is as follows: as shown in Figure 10 , a plurality of metal layer structures 211 are formed on the first base layer 21, and the isolation layer 22 is coated and subjected to photolithography on the surface of the first base layer 21 to form the isolation layer 22 having a plurality of first accommodating portions 221; as shown in Figure 11 , a sputtering is performed on the surface of the plurality of metal layer structures 211 and the surface of the isolation layer 22 to form the electroplating seed layer 24; as shown in Figure 12 , a photoresist is coated and exposed on the surface of the electroplating seed layer 24 to form a photoresist layer 25 having a plurality of gaps; as shown in Figure 13 , the electroplating copper and the electroplating tin are sequentially performed from the gaps of the photoresist layer 25 into the first accommodating portions 221 to respectively form the copper column 231 and the solder portion 232 of the solder structure 23; as shown in Figure 14 , the photoresist layer 25 is removed and subjected to high-temperature reflow to form the complete solder structure 23.

[0072] As shown in Figure 15 , the ideal diode packaging assembly of the present application, wherein the switch chip 30 includes a first electrode 31, a second base layer 34, a second electrode 32 and a passivation layer 35 arranged in layers, the control electrode 33 is arranged in the same layer as the second electrode 32, the passivation layer 35 has a plurality of second accommodating portions 351 for accommodating a chemical plating layer 36, the control electrode 33 and the second electrode 32 are both arranged corresponding to at least one second accommodating portion 351 and are both in conductive connection with the corresponding chemical plating layer 36.

[0073] In particular implementation, the surface of the control electrode 33 and the second electrode 32 is provided with a chemical plating layer 36, the chemical plating layer 36 is arranged to facilitate the soldering connection between the control electrode 33, the second electrode 32 and the second conductive structure 12, and the material of the chemical plating layer 36 is nickel, which can be soldered with solder tin to ensure the soldering effect.

[0074] It should be noted that the relational terms herein such as first and second and the like are used solely to distinguish one from another entity or action, without necessarily requiring or implying any actual relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element preceded by "comprises... a" does not, without more constraints, foreclose the existence of additional identical elements in the process, method, article, or apparatus that comprises the recited element.

[0075] The above describes only specific implementation of the present application, and those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the above-described system, module and unit can refer to the corresponding process in the foregoing method embodiments, which will not be described here. It should be understood that the protection scope of the present application is not limited to this, and any skilled person in the art can easily think of various equivalent modifications or replacements within the technical range disclosed in the present application, and these modifications or replacements should be covered within the protection scope of the present application.

Claims

1. An ideal diode package assembly, comprising: The utility model relates to a switch structure (200) and a substrate (100) comprising the switch structure (200), the switch structure (200) comprises a connecting assembly (10), a control chip (20), a switch chip (30) and a capacitor element (40), the switch chip (30) has the first electrode (31) arranged at one side face and the second electrode (32) and control electrode (33) arranged at the other side face, the connecting assembly (10) comprises a plurality of first conductive structures (11) embedded in the inside of the substrate (100) and a plurality of second conductive structures (12) protruding from the surface of the substrate (100), the control chip (20) is connected to the first electrode (31) and the capacitor element (40) through the first conductive structure (11), and the control chip (20) is connected to the second electrode (32) and the control electrode (33) through the cooperation of the first conductive structure (11) and the second conductive structure (12). The first conductive structure (11) is a metal wire structure, and the second conductive structure (12) is a strip bonding sheet structure. A plurality of connecting holes (50) for arranging pads are formed on the substrate (100), the connecting holes (50) extend from the surface of the substrate (100) to the first conductive structure (11), the control chip (20), the switch chip (30) and the capacitor element (40) are all welded and conductively connected to the plurality of first conductive structures (11) through the pads in the plurality of connecting holes (50). The plurality of connecting holes (50) comprise a first lead-out hole (51), a second lead-out hole (52) and a conductive connecting hole (53), the first lead-out hole (51) is connected to the first electrode (31) through the first conductive structure (11), the second lead-out hole (52) is connected to the second electrode (32) through the first conductive structure (11) and the second conductive structure (12), and the conductive connecting hole (53) is connected between the switch structure (200) and the first conductive structure (11) and between the second conductive structure (12) and the first conductive structure (11).

2. The ideal diode package assembly of claim 1, wherein, The first lead-out hole (51) and the second lead-out hole (52) are formed on different sides of the switch structure (200) respectively.

3. The ideal diode package assembly of claim 2, wherein, The control chip (20), the switch chip (30) and the capacitor element (40) are all arranged on the same side of the substrate (100), the capacitor element (40) is connected in parallel to the control chip (20), and the first electrode (31), the second electrode (32) and the control electrode (33) of the switch chip (30) are all connected to the control chip (20).

4. The ideal diode package assembly of claim 3, wherein, ​ 5. The ideal diode package assembly of claim 1, wherein, ​ 6. The ideal diode package assembly of claim 5, wherein, The switch chip (30), the capacitor element (40) and the control chip (20) are arranged in sequence along a first direction (X), the switch chip (30) and the control chip (20) are arranged in the first direction (X) and are spaced apart, and the capacitor element (40) at least partially overlaps the switch chip (30) in the first direction (X); or, the capacitor element (40) and the switch chip (30) are arranged in the first direction (X) and are spaced apart.

7. The ideal diode package assembly of claim 5, wherein, The switch chip (30) and the control chip (20) are arranged in the first direction (X) and are spaced apart, the capacitor element (40) and the control chip (20) are arranged in sequence along a second direction (Y), and in the second direction (Y), the switch chip (30) is within the coverage range of the overall structure formed by the control chip (20) and the capacitor element (40).

8. The ideal diode package assembly of claim 1, wherein, The control chip (20) and the switch chip (30) are respectively arranged on opposite sides of the substrate (100), the capacitor element (40) is connected in parallel to the control chip (20), and the first electrode (31), the second electrode (32) and the control electrode (33) of the switch chip (30) are all connected to the control chip (20).

9. The ideal diode package assembly of claim 1, wherein, The control chip (20) comprises a first base layer (21) and an isolation layer (22) arranged in layers, the isolation layer (22) has a plurality of first accommodating portions (221) arranged in the isolation layer (22) and spaced apart from each other, the first base layer (21) has a plurality of metal layer structures (211) extending inwardly from the surface of the first base layer (21), the plurality of metal layer structures (211) are arranged in positions opposite to the plurality of first accommodating portions (221), each of the first accommodating portions (221) is provided with a welding structure (23), each of the welding structures (23) is arranged protruding from the surface of the isolation layer (22), and each of the welding structures (23) is in conductive connection with the corresponding metal layer structure (211).

10. The ideal diode package assembly of claim 1, wherein, The switch chip (30) comprises a first electrode (31), a second base layer (34), a second electrode (32) and a passivation layer (35) arranged in layers, the control electrode (33) and the second electrode (32) are arranged in the same layer, the passivation layer (35) has a plurality of second accommodating portions (351) for accommodating a chemical plating layer (36), the control electrode (33) and the second electrode (32) are arranged in positions corresponding to at least one of the second accommodating portions (351), and are in conductive connection with the corresponding chemical plating layer (36).

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