Cleaning device for lens of photoetching machine

Abstract

The utility model discloses a cleaning device for a lens of a photoetching machine, which is detachably arranged on the lens of the photoetching machine and comprises a cleaning cavity, a first pipeline and a discharge pipeline, the cleaning cavity is provided with a port used for being hermetically connected with a lens of the photoetching machine; an inlet of the first pipeline is used for being communicated with a cleaning medium storage device, and an outlet of the first pipeline is communicated with the cleaning cavity in an on-off mode. The discharging pipeline is communicated with the cleaning cavity in an on-off mode, and the discharging pipeline is located at the bottom end of the cleaning cavity. The cleaning cavity is hermetically connected with the photoetching machine lens through the port, the cleaning medium is introduced into the cleaning cavity through the first pipeline, photoresist residues and crystals on the surface of the photoetching machine lens are effectively cleaned, the cleaning medium is discharged through the discharge pipeline arranged at the bottom end of the cleaning cavity, cleaning medium residues are reduced, and the cleaning device is simple in structure and convenient to operate. The cleaning device is convenient and fast to clean, and is beneficial to improving the photoetching quality and the preparation yield of the photoetching machine with the cleaning device.

Description

Technical Field

[0001] This utility model relates to the field of photolithography equipment technology, and in particular to a cleaning device for photolithography machine lenses. Background Technology

[0002] The photolithography process includes steps such as coating photoresist on the wafer surface, exposure, development, etching, and resist removal. However, the photoresist material is volatile. During the exposure process when the wafer enters the photolithography machine, the volatile photoresist encounters the photolithography machine lens and easily forms crystals on the lens, affecting the subsequent exposure effect. However, in the current technology, cleaning the photolithography machine lens still relies on manual cleaning, which is time-consuming, labor-intensive, and the cleaning effect is not good. Utility Model Content

[0003] To address the problems existing in the prior art, this utility model provides a cleaning device for lithography machine lenses. It has a simple structure, can effectively clean the crystals on the lithography machine lenses, is convenient and quick to clean, and has a high degree of cleanliness. This is beneficial to improving the lithography quality and preparation yield of lithography machines equipped with this cleaning device.

[0004] This utility model provides a cleaning device for a lithography machine lens, which is detachably mounted on the lithography machine lens and includes a cleaning cavity, a first pipeline, and a discharge pipeline.

[0005] The cleaning chamber has a port for a sealed connection with the lithography machine lens;

[0006] The inlet of the first pipeline is used to connect with the cleaning medium storage device, and the outlet of the first pipeline is connectable to and disconnectable from the cleaning cavity.

[0007] The discharge pipe is connected to the cleaning chamber and can be switched on and off, and the discharge pipe is located at the bottom of the cleaning chamber.

[0008] Furthermore, the cleaning device for the lithography machine lens also includes an atomizer located between the outlet of the cleaning medium storage device and the inlet of the cleaning chamber.

[0009] Furthermore, the cleaning device for the lithography machine lens also includes a second pipeline, the inlet of which is connected to an inert gas storage device, and the outlet of which is configurably connected to the cleaning chamber.

[0010] Furthermore, the cleaning device for the lithography machine lens also includes a flatness detection device, which includes a signal transmitting end and a signal receiving end, and a detection area of ​​the flatness detection device is formed between the signal transmitting end and the signal receiving end, with the lithography machine lens located in the detection area.

[0011] Furthermore, the light intensity ratio threshold of the flatness detection device is 1.03 to 1.06; the light intensity ratio threshold is the upper limit of the light intensity ratio between the reflected light intensity received by the signal receiving end and the preset light intensity; the preset light intensity is the reflected light intensity received by the signal receiving end in the state where there is no crystal on the surface of the lithography machine lens.

[0012] Furthermore, the cleaning device for the lithography machine lens also includes a test mask and a critical dimension detection device. The test mask has a regular pattern, and the critical dimension detection device is used to periodically measure the critical dimension values ​​of the wafer. The wafer is a patterned wafer formed by the lithography machine lens after photolithography based on the test mask.

[0013] Furthermore, the cleaning device for the lithography machine lens includes at least one of a flatness detection device and a critical dimension detection device, a control device, and an early warning device. At least one of the flatness detection device and the critical dimension detection device is electrically connected to the control device, and the control device is electrically connected to the early warning device.

[0014] Furthermore, the inner diameter of the cleaning cavity is equal to the outer diameter of the lithography machine lens.

[0015] Furthermore, the cleaning chamber is equipped with a sealing element, and the port is sealed to the lithography machine lens through the sealing element.

[0016] Furthermore, the height of the cleaning cavity is less than or equal to a preset height, which is 3cm to 6cm.

[0017] On the other hand, the present invention also provides a lithography machine, including a lithography machine lens and a cleaning device for the lithography machine lens as described in any of the preceding claims.

[0018] Implementing this utility model has the following beneficial effects:

[0019] 1. The cleaning chamber of this utility model is sealed to the lens of the lithography machine through the port. The cleaning medium is introduced into the cleaning chamber through the first pipeline, which can effectively clean the photoresist residue and crystals attached to the surface of the lithography machine lens. The cleaning medium is discharged through the discharge pipeline set at the bottom of the cleaning chamber, reducing the residue of the cleaning medium. The overall structure is simple, the cleaning is convenient and quick, and the cleanliness is high, which is conducive to improving the lithography quality and preparation yield of the lithography machine equipped with this cleaning device.

[0020] 2. This utility model provides an atomizer between the cleaning medium storage device and the cleaning chamber, which enables the cleaning medium introduced into the cleaning chamber to be in a mist state for cleaning. This reduces the residue of the cleaning medium on the lithography machine lens after cleaning and also effectively reduces the risk of large-area contamination of the lithography machine due to leakage of the cleaning medium during the cleaning process.

[0021] 3. This utility model uses a flatness detection device to monitor the crystallization status on the lens of the lithography machine. It has good real-time performance, which is conducive to timely cleaning or reminding operators to make manual intervention, reducing unwanted material loss, and also helps to improve the lithography effect and preparation yield.

[0022] 4. This utility model adopts a critical dimension detection device, which can periodically determine whether there is crystal on the lithography machine lens that needs to be cleaned based on the critical dimension values ​​of the wafer obtained by the test photomask, thereby further improving the effectiveness and reliability of cleaning. Attached Figure Description

[0023] To more clearly illustrate the technical solution of this utility model, the accompanying drawings used in the embodiments will be briefly described below, wherein the same components are represented by the same reference numerals. Obviously, the drawings described below are merely some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0024] Figure 1 A schematic diagram of the assembly structure of a cleaning device for a lithography machine lens and a lithography machine lens provided by this utility model;

[0025] Figure 2 A schematic diagram illustrating the monitoring principle of a flatness detection device provided by this utility model;

[0026] Figure 3 A graph showing the key dimension values ​​detected by the key dimension detection device provided by this utility model within a certain period of time.

[0027] The corresponding reference numerals in the figure are as follows:

[0028] 1-Lithography machine lens, 2-Cleaning chamber, 21-Port, 3-First pipeline, 4-Emission pipeline, 5-Atomizer, 6-Second pipeline, 7-Photoresist material, 8-Crystal, 9-Wafer, 10-Signal transmitter, 11-Signal receiver. Detailed Implementation

[0029] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings. It should be noted that the terms "upper," "lower," "left," "right," "inner," "outer," "front," "rear," "both ends," "one end," and "the other end," etc., indicating the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the device or structure referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present utility model. Furthermore, the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are within the scope of protection of the present utility model.

[0030] To address the problem that photoresist easily volatilizes and forms residues and crystals on the lithography lens during the lithography process, affecting the quality and yield of subsequent lithography processes, this invention provides a cleaning device for lithography lenses. This device is detachably mounted on the lithography lens, allowing for precise cleaning during cleaning with a sealed connection. The cleaning process is efficient, reliable, and saves time and effort. After cleaning, it can be removed from the lens, preventing any disruption to the stable execution of subsequent lithography processes.

[0031] Specifically, such as Figure 1 As shown, the cleaning device includes a cleaning chamber 2, a first pipeline 3, and a discharge pipeline 4. The cleaning chamber 2 has a port 21 for sealing connection with the lithography machine lens 1, enabling targeted cleaning of the lens 1 with high efficiency and good cleaning effect. It also avoids leakage of cleaning media during the cleaning process, preventing contamination of the lithography machine. The cleaning device is convenient and has good cleaning stability. The inlet of the first pipeline 3 is connected to a cleaning media storage device, and the outlet of the first pipeline 3 is connectable to and disconnectable from the cleaning chamber 2, allowing for self-disconnection of the cleaning media storage device. The device introduces a cleaning medium, which is then introduced into the cleaning chamber 2 through the first pipe 3 to clean the surface of the lithography lens 1 located inside the cleaning chamber 2. The discharge pipe 4 is connected to the cleaning chamber 2 and can be switched on and off. After cleaning, the used cleaning medium can be discharged from the cleaning chamber 2 through the discharge pipe 4. The discharge pipe 4 is located at the bottom of the cleaning chamber 2, which facilitates the rapid discharge of the cleaning medium and reduces the residue of the cleaning medium in the cleaning chamber 2. This cleaning device is efficient and stable in cleaning the residual crystals 8 on the surface of the lithography lens 1, with good cleaning effect, and avoids affecting the exposure effect of the subsequent lithography machine.

[0032] The cleaning medium is a liquid capable of dissolving the photoresist material 7, including at least one of chloromethane, dichloromethane, ethyl acetate, isopropanol, and acetone; in some preferred embodiments, the cleaning medium includes acetone, which has good solubility for the photoresist material 7 and is beneficial to improving cleaning efficiency and cleaning effect.

[0033] In some exemplary embodiments, the cleaning device further includes an ultrasonic generator that can be disposed on the periphery of the outer shell of the cleaning cavity 2. When powered on, it can emit ultrasonic waves toward the cleaning cavity 2 and convert the ultrasonic waves into mechanical vibrations to enhance the cleaning intensity of the cleaning medium, shorten the cleaning time, and improve the cleaning efficiency and cleaning effect.

[0034] In some optional implementations, the outer diameter of the cleaning chamber 2 is consistent with the inner diameter of the frame of the lithography lens 1, that is, the outer diameter of the port 21 is equal to the inner diameter of the frame of the lithography lens 1. On the one hand, this improves the sealing reliability between the cleaning chamber 2 and the lithography lens 1, and on the other hand, it makes the cleaning chamber 2 more accurately aligned with the lens surface, thereby improving the cleaning accuracy and cleaning effect.

[0035] Specifically, in some preferred embodiments, the inner diameter of the cleaning chamber 2 is equal to the outer diameter of the lithography lens 1, that is, the inner diameter of the port 21 is equal to the outer diameter of the lithography lens 1. During installation, the inner wall of the port 21 of the cleaning chamber 2 can be engaged with the outer side of the lithography lens 1, which is convenient for assembly and has good sealing performance. This facilitates targeted cleaning of the surface of the lithography lens 1 and prevents the cleaning medium from leaking from the gap between the port 21 and the lithography lens 1 during the cleaning process, thus preventing contamination of the lithography machine. This improves cleaning efficiency, cleaning accuracy, cleaning stability, and cleaning economy.

[0036] In some exemplary embodiments, the port 21 is configured to conform to the shape of the lithography lens 1. If the side of the lithography lens 1 is irregular, the port 21 configured to conform to the shape can improve the matching degree between the shape of the port 21 and the lithography lens 1, which is beneficial to improve the sealing reliability between the port 21 and the lithography lens 1, improve the cleaning stability and cleaning reliability, and prevent liquid leakage during the cleaning process from contaminating the lithography machine.

[0037] Specifically, in some exemplary embodiments, the cleaning chamber 2 is provided with a sealing element, and the port 21 is sealed to the lithography lens 1 through the sealing element, which can further improve the sealing reliability between the port 21 and the lithography lens 1, and improve the cleaning efficiency and cleaning stability of the lithography lens 1. For example, in some specific embodiments, the sealing element is an O-ring, which is elastic. During the sealing process, one side forms an interference fit with the port 21, and the other side forms an interference fit with the lithography lens 1, which greatly improves the sealing stability between the port 21 and the lithography lens 1 and prevents the cleaning medium from leaking.

[0038] Specifically, the height of the cleaning chamber 2 is less than or equal to a preset height, which is 3cm to 6cm. Understandably, the preset height can be any value between 3cm and 6cm. For example, the preset height can be 3cm, 3.5cm, 4cm, 4.5cm, 5cm, 5.5cm, 6cm, etc. It can accommodate enough cleaning medium to effectively dissolve the crystals 8 on the surface of the lithography machine lens 1, meeting the cleaning needs of most lithography machines, while also avoiding interference with or damage to other components in the lithography machine. For example, in some specific embodiments, the preset height is 5cm, that is, the height of the cleaning chamber 2 is less than or equal to 5cm.

[0039] Specifically, such as Figure 1 As shown, the cleaning device also includes an atomizer 5, which is located between the outlet of the cleaning medium storage device and the inlet of the cleaning chamber 2. The atomizer 5 can turn the saturated cleaning medium into vapor. After the cleaning chamber 2 is sealed for 5 minutes, the crystals 8 can dissolve in the cleaning medium vapor and fall off the lithography machine lens 1. The atomizer 5 makes the incoming cleaning medium appear as a mist, which can effectively reduce the residue of the cleaning medium on the lithography machine lens 1 and greatly reduce the risk of large-area contamination of the lithography machine due to leakage of liquid cleaning medium during the cleaning process, thereby improving the cleaning effect and cleaning stability.

[0040] Specifically, such as Figure 1 As shown, the cleaning device also includes a second pipeline 6. The inlet of the second pipeline 6 is connected to an inert gas storage device, and the outlet of the second pipeline 6 is configurably connected to the cleaning chamber 2. The second pipeline 6 can introduce inert gas from the inert gas storage device. The inert gas may include non-toxic and harmless gases such as nitrogen and argon. After passing through the second pipeline 6, the inert gas is introduced into the cleaning chamber 2 at the same time as or after the cleaning medium is discharged from the discharge pipeline 4, so as to purge the cleaning medium remaining in the cleaning chamber 2 and the dissolved crystals 8 therein from the cleaning chamber 2 and leave the cleaning device from the discharge pipeline 4, so as to avoid affecting the effect of subsequent exposure processes and improve the lithography effect and preparation yield of the lithography machine.

[0041] Specifically, the cleaning device also includes a flatness detection device, such as... Figure 2As shown, the flatness detection device includes a signal transmitting end 10 and a signal receiving end 11, forming a detection area between the signal transmitting end 10 and the signal receiving end 11. The lithography lens 1 is located in the detection area. This flatness detection device can transmit and receive light signals in real time to effectively monitor the crystallization status of the surface of the lithography lens 1, so as to further determine in real time whether the lithography lens 1 needs to be cleaned, improve the timeliness of cleaning, reduce material waste, and improve the preparation yield. In some optional embodiments, the flatness detection device is a built-in sensor, which has low hardware cost, small space occupation, and convenient assembly.

[0042] Among them, such as Figure 2 As shown, the signal transmitting end 10 can transmit the incident light light signal to the detection area in real time, and the signal receiving end 11 is used to receive the reflected light signal after it is reflected, diffused or scattered after being incident on the lithography machine lens 1. When there is crystal on the surface of the lithography machine lens 1, the light signal received by the signal receiving end 11 may become weaker, but it will not be completely unable to receive the light signal, so as to improve the real-time performance, effectiveness and reliability of the flatness detection device in monitoring the crystallization status on the surface of the lithography machine lens 1.

[0043] Specifically, the cleaning device also includes a control device, which is electrically connected to the flatness detection device. The light signal received by the signal receiving end 11 can be transmitted to the control device so that the control device can make a logical judgment based on the light signal to determine whether to clean the lithography lens 1. If it is determined that the lithography lens 1 should be cleaned, the cleaning cavity 2 is controlled to move to the lithography lens 1 and be sealed and connected to the lithography lens 1. The device has a high degree of automation and saves time and effort in cleaning.

[0044] Specifically, the light signal of the reflected light received by the signal receiver 11 can characterize the intensity of the reflected light. Assuming that an intensity ratio threshold is used as the condition for evaluating whether the lithography lens 1 has been cleaned, this intensity ratio threshold is the upper limit of the intensity ratio between the intensity of the reflected light received by the signal receiver 11 and a preset intensity. The preset intensity is the intensity of the reflected light received by the signal receiver 11 in a crystal-free state on the surface of the lithography lens 1; that is, the intensity of the reflected light received by the signal receiver 11 in a crystal-free state is set as a reference value, and the control device can perform [further actions] based on the received light signal of the reflected light. The current light intensity ratio is obtained through logical operations and compared with the light intensity ratio threshold. When there is crystal on the surface of the lithography machine lens 1, scattering, diffusion, and reflection will occur, affecting the intensity of the reflected light received by the signal receiver 11. When the detected light intensity ratio of the reflected light is less than or equal to the light intensity ratio threshold, it means that there is currently no crystal or very little crystal on the surface of the lithography machine lens 1, and cleaning is not required. When the detected light intensity ratio of the reflected light is greater than the light intensity ratio threshold, it means that there is already a lot of crystal on the surface of the lithography machine lens 1, which will affect the exposure effect, and the cleaning device needs to be controlled for cleaning.

[0045] Specifically, the light intensity ratio threshold of the flatness detection device is 1.03 to 1.06; understandably, this light intensity ratio threshold can be any value within the range of 1.03 to 1.06; for example, this light intensity ratio threshold can be 1.03, 1.035, 1.04, 1.045, 1.05, 1.055, 1.06, etc.; when the current light intensity ratio of the reflected light is less than or equal to this light intensity ratio threshold, cleaning is not required, avoiding waste of cleaning energy and saving time; while when the current light intensity ratio of the reflected light is greater than this light intensity ratio threshold, the cleaning device is controlled to perform cleaning, which ensures timely cleaning, avoids waste of raw materials, and improves the overall preparation yield.

[0046] In some other exemplary embodiments, a light intensity difference percentage threshold is set as the condition for determining whether to clean the lithography machine lens 1. This light intensity difference percentage threshold is the upper limit of the ratio between the light intensity difference value and a preset light intensity. The light intensity difference value is the light intensity difference between the reflected light intensity received by the signal receiver 11 and the preset light intensity. The preset light intensity is the light intensity of the reflected light received by the signal receiver 11 in a state where there is no crystal on the surface of the lithography machine lens 1. The control device can perform logical operations based on the received reflected light signal to obtain the current light intensity difference percentage and compare it with the light intensity difference percentage threshold. The light intensity difference percentage α satisfies the following formula:

[0047]

[0048] When the monitored α value is greater than the light intensity difference percentage threshold, it indicates that there is already a lot of crystal on the surface of the lithography machine lens 1, which will affect the exposure effect. In this case, it is necessary to control the cleaning device to clean it.

[0049] The light intensity difference percentage threshold is 3% to 6%. Understandably, this light intensity difference threshold can be any value between 1.03 and 1.06, which will not be listed here. When the light intensity difference percentage is less than or equal to the light intensity difference percentage threshold, no cleaning is required. When the light intensity difference percentage is greater than the light intensity difference percentage threshold, the cleaning device is controlled to perform cleaning. For example, in some specific embodiments, the light intensity difference percentage threshold is 5%, that is, when α>5%, it is determined that there are more photoresist residues and crystals on the surface of the lithography machine lens 1, and the cleaning device is controlled to perform cleaning.

[0050] Specifically, in some exemplary embodiments, the cleaning device further includes a test photomask and a critical dimension detection device. The test photomask has a regular pattern, and the critical dimension detection device is used to periodically measure the critical dimension values ​​of the wafer 9, which is a patterned wafer 9 formed by photolithography by the lithography lens 1 based on the test photomask. When photoresist crystallization exists on the lithography lens 1, some light transmitted through that location will be scattered, thus affecting the critical dimension (CD) of the exposure. The pattern on the test photomask includes a large number of optical proximity correction patterns, which are relatively regularly distributed. Using this test photomask with regular patterns, and exposing the wafer 9 at a fixed exposure energy, the CD value of the fixed pattern on the patterned wafer 9 after exposure is measured and transmitted to a controllable device for statistical analysis. Based on the fluctuation of the CD value, the crystallization status on the surface of the lithography lens 1 can be determined, thereby using this as a judgment condition to control the cleaning device to perform cleaning, further improving the reliability and stability of automatic cleaning. In some optional embodiments, the critical dimension detection device includes a CDSEM machine, which is convenient and accurate for measurement.

[0051] The critical dimension detection device can measure the CD value periodically, such as once a week. The critical dimension detection device is electrically connected to the control device and can send the measured CD value to the control device. The control device performs statistical analysis and logical judgment on the CD value. If there is crystal on the lithography lens 1, which causes the CD value to increase, the device can automatically clean or manually intervene to check and clean when the test result is abnormal.

[0052] Specifically, in some exemplary embodiments, the fluctuation threshold of the CD value is used as a condition for determining whether the lithography lens 1 needs to be cleaned. This fluctuation threshold is the maximum difference between the critical dimension when crystallization is allowed on the surface of the lithography lens 1 and the standard critical dimension when crystallization is not present on the surface of the lithography lens 1. Figure 3 As shown, when there is no crystal on the surface of the lithography lens 1, the CD value can be maintained at the same level. However, if there is crystal on the surface of the lithography lens 1, the measured CD value deviates from the standard critical dimension. The fluctuation threshold of the CD value is determined based on the type of lithography machine. Different types of lithography machines have different fluctuation thresholds for the CD value.

[0053] The fluctuation threshold of the critical dimension value is 5nm to 10nm. Understandably, the fluctuation threshold of the CD value can be any point value within 5nm to 10nm. For example, the fluctuation threshold of the CD value can be 5nm, 5.5nm, 6nm, 6.5nm, 7nm, 8nm, 8.5nm, 9nm, 10nm, etc. When the fluctuation amplitude of the CD value is less than or equal to the fluctuation threshold, it indicates that there is no crystallization or very little crystallization on the surface of the lithography lens 1, and lithography can continue without cleaning, avoiding waste of cleaning energy and saving process time. When the fluctuation amplitude of the CD value is greater than the fluctuation threshold, it indicates that there is a large amount of crystallization on the surface of the lithography lens 1, which will affect the subsequent exposure effect. In this case, the cleaning device is controlled to clean, improve the cleanliness of the lithography lens 1, and improve the lithography effect and preparation yield of the lithography machine.

[0054] Specifically, in some exemplary embodiments, the cleaning device includes a flatness detection device and a critical dimension detection device. Both the flatness detection device and the critical dimension detection device are electrically connected to the control device to achieve real-time monitoring and periodic monitoring. The two complement each other to prevent excessive photoresist residue on the surface of the lithography lens 1 from occurring due to failure or detection error of one of the detection devices, thereby effectively maintaining the exposure effect and preparation yield of the lithography machine.

[0055] Specifically, in some exemplary embodiments, the cleaning device further includes an early warning device, at least one of a flatness detection device and a critical dimension detection device electrically connected to the control device. The control device is electrically connected to the early warning device. When the control device determines that the lithography lens 1 needs to be cleaned, the control device can send a signal to the early warning device so that the early warning device responds to the signal and issues an alarm to remind the operator to clean the lithography lens 1, thus preventing the cleaning device from malfunctioning and causing cleaning failure, and greatly improving the cleaning reliability.

[0056] On the other hand, this utility model also provides a lithography machine, including a lithography machine lens and a cleaning device for the lithography machine lens as described above, which can effectively and conveniently clean the lithography machine lens and improve the cleanliness of the lithography machine lens.

[0057] This cleaning device integrates automatic cleaning functions. It can monitor the crystallization status of the lithography machine lens surface in real time through a flatness detection device and / or periodically through a critical dimension detection device. It also periodically uses cleaning media and ultrasonic cleaning technology. The cleaning media in vapor state is introduced into the cleaning chamber through the first pipeline and atomizer, causing the crystals on the lithography machine lens to dissolve in the cleaning media vapor and detach from the lithography machine lens. Then, the cleaning media and the dissolved crystals are discharged through the exhaust pipe at the bottom of the cleaning chamber. At the same time, inert gas can be introduced through the second pipeline for purging, and the residual cleaning media and photoresist in the cleaning chamber are discharged through the exhaust pipe. This achieves effective removal of photoresist residue and crystals on the surface of the lithography machine lens, keeps the lithography machine lens clean, avoids affecting the thickness exposure effect, and improves the lithography effect and preparation yield.

[0058] The above description is only some embodiments of the present utility model and is not intended to limit the present utility model. Those skilled in the art should understand that the present utility model may have various changes and improvements. Any modifications, equivalent substitutions and improvements made in accordance with the present utility model fall within the scope of protection claimed by the present utility model.

Claims

1. A cleaning device for a lithography lens, which is detachably arranged on a lithography lens (1), characterized in that, The cleaning device for the photolithography lens (1) comprises a cleaning cavity (2), a first pipeline (3) and a discharge pipeline (4). The cleaning cavity (2) has a port (21) for sealing connection with the photolithography lens (1). The inlet of the first pipeline (3) is used for communication with a cleaning medium storage device, and the outlet of the first pipeline (3) is in on-off communication with the cleaning cavity (2). The discharge pipeline (4) is in on-off communication with the cleaning cavity (2), and the discharge pipeline (4) is located at the bottom end of the cleaning cavity (2).

2. The cleaning device for a lens of a photolithography machine according to claim 1, wherein, The cleaning device for the photolithography lens (1) further comprises an atomizer (5) located between the outlet of the cleaning medium storage device and the inlet of the cleaning cavity (2).

3. The cleaning device for a lens of a photolithography machine according to claim 1, wherein, The cleaning device for the photolithography lens (1) further comprises a second pipeline (6), the inlet of the second pipeline (6) is used for communication with an inert gas storage device, and the outlet of the second pipeline (6) is in on-off communication with the cleaning cavity (2).

4. The cleaning device for a lens of a photolithography machine according to claim 1, wherein, The cleaning device for the photolithography lens (1) further comprises a flatness detection device, the flatness detection device comprises a signal emitting end (10) and a signal receiving end (11), a detection area of the flatness detection device is formed between the signal emitting end (10) and the signal receiving end (11), and the photolithography lens (1) is located in the detection area.

5. The cleaning device for a lens of a photolithography machine according to claim 4, wherein, The light intensity ratio threshold of the flatness detection device is 1.03-1.06; the light intensity ratio threshold is an upper limit value of a light intensity ratio between the reflected light intensity received by the signal receiving end (11) and a preset light intensity; and the preset light intensity is the reflected light intensity received by the signal receiving end (11) when the surface of the photolithography lens (1) is in a non-crystalline state.

6. The cleaning device for a lens of a photolithography machine according to any one of claims 1-5, wherein, The cleaning device for the photolithography lens (1) further comprises a test mask and a critical dimension detection device, the test mask has a regular pattern, and the critical dimension detection device is used for periodically measuring a critical dimension value of a wafer (9), the wafer (9) being a patterned wafer formed after the photolithography lens (1) performs photolithography according to the test mask.

7. The cleaning device for a lens of a photolithography machine according to any one of claims 1-5, wherein, The cleaning device for the photolithography lens (1) comprises at least one of a flatness detection device and a critical dimension detection device, a control device and a warning device, the at least one of the flatness detection device and the critical dimension detection device being electrically connected with the control device, and the control device being electrically connected with the warning device.

8. The cleaning device for a lens of a photolithography machine according to any one of claims 1-5, wherein, The inner diameter of the cleaning cavity (2) is equal to the outer diameter of the photolithography lens (1).

9. The cleaning device for a lens of a photolithography machine according to any one of claims 1-5, wherein, The cleaning cavity (2) is provided with a sealing element, and the port (21) is sealingly connected with the photolithography lens (1) through the sealing element.

10. The cleaning device for a lens of a photolithography machine according to any one of claims 1-5, wherein, The height of the cleaning cavity (2) is less than or equal to a preset height, and the preset height is 3-6 cm.

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