Jig for etching MEMS penetrating device

Abstract

The utility model relates to a jig for etching a micro-electromechanical system (MEMS) penetrating device, which is characterized in that the jig comprises a placing disc, two sides of the placing disc serve as a contact surface and a placing surface, the contact surface is used for contacting with a lower electrode, the placing surface is used for bearing a wafer, the placing surface is provided with a placing groove, the placing groove is used for placing the wafer, and the wafer is placed in the placing groove. The placement disc is laid on the lower electrode through the contact between the placement surface and the lower electrode so as to separate the wafer from the lower electrode, the placement disc is provided with a plurality of through jacking pin holes, the jacking pin holes are arranged at intervals, and the jacking pin holes are used for allowing the jacking rods to pass through. The utility model has the following advantages and effects: the lower electrode can be prevented from being etched, and the flatness of the wafer can be ensured when the wafer is placed.

Description

Technical Field

[0001] This utility model relates to the field of wafer etching technology, and specifically to a fixture for etching through MEMS devices. Background Technology

[0002] In the design of MEMS devices, through-hole structures are often used. Therefore, when manufacturing MEMS devices, the wafer needs to be etched using an etching machine.

[0003] During the etching process, the wafer to be etched is usually placed on the lower electrode. The lower electrode mainly serves to carry and conduct electricity, ensuring the high efficiency of the etching process. However, the design of through holes requires etching through holes on the wafer. The location of the holes will expose the lower electrode, which can easily cause etching on the lower electrode and affect its service life.

[0004] Therefore, in the existing technology, a protective film is laid on the lower electrode to avoid etching the lower electrode. However, since the etching process requires a vacuum state, the protective film is prone to bulging due to the holes etched on the wafer, which affects the flatness of the wafer placement and thus the quality of the etching of the wafer through holes. Summary of the Invention

[0005] To address the shortcomings of existing technologies, the purpose of this invention is to provide a fixture for etching through MEMS devices, which can avoid etching the lower electrode while ensuring the flatness of the wafer during placement.

[0006] To achieve the above objectives, this utility model provides the following technical solution: a fixture for etching through-memory devices in MEMS, comprising a placement disk, the two sides of which serve as a contact surface and a placement surface. The contact surface is used to contact the lower electrode, and the placement surface is used to support the wafer. The placement surface is provided with a placement groove for placing the wafer. The placement disk is laid on the lower electrode by contacting the lower electrode through the placement surface, thereby separating the wafer from the lower electrode. The placement disk is provided with a through-hole for lifting pins, and there are multiple lifting pin holes spaced apart from each other. The lifting pin holes are used for lifting rods to pass through.

[0007] The present invention is further configured such that: the outer periphery of the placement groove is provided with a positioning arc surface, the positioning arc surface is connected to the placement groove, the height of the positioning arc surface decreases sequentially along the direction toward the placement groove, and forms an inclined positioning sidewall.

[0008] The present invention is further configured such that: the placement groove is provided with an annular flow channel, which is used to place the wafer in the placement groove and allow helium gas to flow through.

[0009] The present invention is further configured such that: the placement groove is provided with a helium inlet hole that penetrates the placement plate, the helium inlet hole is connected to the annular flow channel, and there are multiple helium inlet holes that are evenly distributed in the annular flow channel in a circumferential manner.

[0010] The present invention is further configured such that: the placement surface is provided with an annular mounting groove, and a sealing ring is provided in the annular mounting groove, the sealing ring being adapted to the annular mounting groove.

[0011] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0012] By employing a placement disk, when etching through-holes on the wafer is required, the placement disk can be attached to the lower electrode to separate the lower electrode from the wafer. In this way, the placement disk can protect the lower electrode while supporting the wafer, thereby avoiding etching of the lower electrode and ensuring the stability of the lower electrode during long-term use. Furthermore, the bottom of the placement slot of the placement disk has a flat structure, which ensures that the wafer is fully attached to the bottom of the placement slot when supporting the wafer, thereby ensuring the flatness of the wafer during placement. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the overall structure of the present invention when it is installed on the lower electrode;

[0014] Figure 2 This is a schematic diagram showing the connection relationship between the present invention, the lower electrode, and the cylinder;

[0015] Figure 3 This is a schematic cross-sectional view of the present invention.

[0016] Figure 4 This is a partially enlarged structural diagram of part A of this utility model. Detailed Implementation

[0017] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0018] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0019] like Figures 1 to 4 As shown, this utility model discloses a fixture for etching through-devices in MEMS, including a placement tray 1. The two sides of the placement tray 1 serve as contact surfaces 101 and placement surfaces 102. The contact surfaces 101 are used to contact the lower electrode 100, and the placement surfaces 102 are used to support the wafer 200. After the placement tray 1 is placed on the lower electrode 100, the placement tray 1 can be attracted by the electrostatic adsorption generated by the lower electrode 100. In this way, the placement tray 1 is laid on the lower electrode 100 through the contact of the placement surfaces 102, so that the wafer 200 is separated from the lower electrode 100. Thus, the placement tray 1 can protect the lower electrode 100 while supporting the wafer 200, thereby avoiding etching of the lower electrode 100 and ensuring the stability of the lower electrode 100 during long-term use.

[0020] In addition, the placement surface 102 is provided with a placement groove 3 for placing the wafer 200. The bottom of the placement groove 3 is a flat structure, which ensures that the wafer 200 is fully attached to the bottom of the placement groove 3 when the wafer 200 is supported, thereby ensuring the flatness of the wafer 200 when it is placed.

[0021] In this embodiment, a plurality of lifting pin holes 103 are further provided on the placement tray 1, spaced apart from each other. The lifting pin holes 103 are used for the lifting rods 400 to pass through, so that a corresponding lifting device, such as a cylinder 300, can be installed below the lower electrode 100. A first clearance hole is provided on the lower electrode 100, which is opposite to the lifting pin holes 103. By installing a corresponding lifting rod 400 on the output end of the cylinder 300 and making the lifting rod 400 opposite to the lifting pin holes 103, when placing the wafer 200 to be etched, the robot arm will lift the wafer... After the wafer 200 is gripped above the placement tray 1, the lifting rod 400 is pushed out of the lifting pin hole 103 by the cylinder 300. The lifting rod 400 can then support the wafer 200 gripped by the robot arm. Subsequently, the lifting rod 400 can be lowered so that the wafer 200 can be placed in the placement slot 3. Similarly, when it is necessary to remove the wafer 200 from the placement slot 3, the lifting rod 400 can be pushed out of the lifting pin hole 103 by the cylinder 300 to lift the wafer 200 in the placement slot 3, so that the robot arm can grip it, thereby improving the convenience of wafer 200 retrieval and placement.

[0022] In this embodiment, to ensure that the wafer 200 is centered in the placement slot 3 when it is placed in the slot 3, a positioning arc surface 2 is further provided on the outer periphery of the placement slot 3. The positioning arc surface 2 surrounds the placement slot 3 and is connected to the placement slot 3. The height of the positioning arc surface 2 decreases sequentially in the direction toward the placement slot 3, forming an inclined positioning sidewall 21. Thus, when the wafer 200 is placed in the placement slot 3, if there is an offset between the wafer 200 and the center of the placement slot 3, the wafer 200 can contact the positioning sidewall 21 during the descent. Under the guidance of the positioning sidewall 21, the wafer 200 can slide toward the center of the placement slot 3 during the descent, thereby achieving automatic centering of the wafer 200.

[0023] In this embodiment, an annular flow channel 4 is further provided in the placement groove 3. Since helium needs to be introduced when etching the wafer 200, after the wafer 200 is placed in the placement groove 3, the wafer 200 can cover the annular flow channel 4. At this time, the annular flow channel 4 can form a closed space, so that the helium can flow stably in the annular flow channel 4. In this way, the heat generated during the etching of the wafer 200 can be dissipated by taking advantage of the excellent thermal conductivity of helium.

[0024] In addition, to facilitate the entry of helium into the annular flow channel 4, a helium inlet hole 5 penetrating the placement plate 1 is provided in the placement groove 3. The helium inlet hole 5 is connected to the annular flow channel 4. There are multiple helium inlet holes 5, which are evenly distributed in a circular pattern in the annular flow channel 4. Thus, a helium delivery pipe can be set below the lower electrode 100. The helium delivery pipe can extend into the helium inlet hole 5 through a second clearance hole opened on the lower electrode 100 and opposite to the helium inlet hole 5. In this way, helium can be directly delivered into the annular flow channel 4 through the helium delivery pipe. Furthermore, since there are multiple helium inlet holes 5, sensors can be installed in some of the helium inlet holes 5 to detect the flow rate of helium in the annular flow channel 4. This allows the system to determine whether there is a helium leak in the annular flow channel 4 based on the change in the flow rate of helium in the annular flow channel 4.

[0025] In this embodiment, an annular mounting groove 6 is further provided on the placement surface 102, and a sealing ring 7 is provided in the annular mounting groove 6. The sealing ring 7 is adapted to the annular mounting groove 6. After the lower electrode 100 electrostatically adsorbs the placement disk 1, the sealing ring 7 can be deformed by being squeezed. In this way, the sealing ring 7 can be tightly attached to the annular mounting groove 6 to form a seal, thereby preventing helium from leaking from the junction of the placement disk 1 and the lower electrode 100.

[0026] This specific embodiment is merely an explanation of the present utility model and is not intended to limit the present utility model. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but as long as they are within the scope of the claims of the present utility model, they are protected by patent law.

Claims

1. A fixture for etching through MEMS devices, characterized in that, The device includes a placement tray with two sides serving as a contact surface and a placement surface. The contact surface is used to contact the lower electrode, and the placement surface is used to support the wafer. The placement surface has a placement groove for placing the wafer. The placement tray is laid on the lower electrode by contacting the lower electrode through the placement surface, thereby separating the wafer from the lower electrode. The placement tray has multiple through-holes for lifting pins, which are spaced apart from each other and are used for lifting rods to pass through.

2. The fixture for etching through MEMS devices according to claim 1, characterized in that, The outer periphery of the placement groove is provided with a positioning arc surface, which is connected to the placement groove. The height of the positioning arc surface decreases sequentially along the direction toward the placement groove, forming an inclined positioning sidewall.

3. The fixture for etching through MEMS devices according to claim 1, characterized in that, The placement slot is equipped with an annular flow channel, which is used to place the wafer in the placement slot and allow helium gas to flow through it.

4. A fixture for etching through MEMS devices according to claim 3, characterized in that, The placement slot is provided with a helium inlet hole that penetrates the placement plate. The helium inlet hole is connected to the annular flow channel. There are multiple helium inlet holes that are evenly distributed in the annular flow channel in a circular pattern.

5. A fixture for etching through-memory devices in MEMS according to claim 1, characterized in that, The placement surface is provided with an annular mounting groove, and a sealing ring is provided in the annular mounting groove, the sealing ring being adapted to the annular mounting groove.

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