Silicon carbide wafer polishing device
By employing a polishing disc and multiple sets of beam components in a uniform arrangement within the silicon carbide wafer polishing device, the problem of uneven polishing caused by uneven ultraviolet contact was solved, achieving a uniform polishing effect for silicon carbide wafers.
Patent Information
- Application Number
- CN202422421163.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-08
- Publication Date
- 2026-01-13
- Estimated Expiration
- 2034-10-08
AI Technical Summary
In existing technologies, uneven contact of ultraviolet light on the surface of silicon carbide wafers leads to uneven polishing results and inconsistent polishing rates.
The device employs a polishing disc and multiple beam assemblies, which are evenly spaced along the circumference of the polishing disc. Each beam assembly includes an ultraviolet emitter and a base, which are fixed by a support rod. The ultraviolet emitter is constructed as a curved hemispherical surface, and the base diameter is larger than that of the emitter. The beam assemblies are arranged at 60° intervals. The control unit is electrically connected to the beam assemblies to achieve uniform irradiation.
It improves the polishing uniformity of silicon carbide wafers, reduces the impact of machine vibration on polishing, and ensures that silicon carbide wafers are fully and uniformly polished.
Smart Images
Figure CN223790168U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present disclosure relates to the technical field of semiconductor material, in particular to a silicon carbide wafer polishing device. BACKGROUND
[0002] With the development of semiconductor material technology, the quality requirement of silicon carbide wafer is higher and higher. Generally, the polishing process is adopted to accelerate the oxidation reaction on the surface of the silicon carbide wafer through ultraviolet radiation in a high-pressure oxygen environment, so as to better remove the oxide layer to meet the surface flatness requirement of the silicon carbide wafer. In the related technology, the ultraviolet light cannot uniformly contact the surface of the silicon carbide, resulting in inconsistent polishing rate of the silicon carbide wafer at different positions, and the problem of uneven polishing effect exists. CONTENT OF THE UTILITY MODEL
[0003] The purpose of the present disclosure is to provide a silicon carbide wafer polishing device which can improve the polishing uniformity of the silicon carbide wafer.
[0004] In order to achieve the above purpose, the present disclosure provides a silicon carbide wafer polishing device, comprising a polishing disc and a plurality of light beam assemblies, the polishing disc comprises an upper disc and a lower disc, and the upper disc and the lower disc are used for clamping a silicon carbide wafer, and the plurality of light beam assemblies are uniformly and spacedly arranged along the circumference of the polishing disc.
[0005] Optionally, the light beam assembly comprises an ultraviolet emitter and a base, and the ultraviolet emitter is fixed with the base through a support rod.
[0006] Optionally, the ultraviolet emitter is configured as a hemispherical emitter with an arc-shaped surface, and the arc-shaped surface is arranged towards the polishing disc.
[0007] Optionally, the diameter of the base is greater than the diameter of the hemispherical emitter.
[0008] Optionally, the difference between the diameter of the base and the diameter of the hemispherical emitter is less than the diameter of the hemispherical emitter.
[0009] Optionally, the ultraviolet emitter has a plurality of different light intensities.
[0010] Optionally, the interval between two adjacent light beam assemblies is 60°.
[0011] Optionally, the silicon carbide wafer polishing device comprises a control unit, and each of the plurality of light beam assemblies is electrically connected with the control unit.
[0012] Optionally, the light beam assembly comprises a time relay, and the ultraviolet emitter is electrically connected with the control unit through the time relay.
[0013] Optionally, the silicon carbide wafer polishing device comprises a column, the column is supported above the polishing disc, the control unit is installed on the column and electrically connected with the polishing disc.
[0014] By the above technical solution, in the silicon carbide wafer polishing device provided by the present disclosure, the polishing disc and the multiple sets of light beam assemblies are included, the silicon carbide wafer is clamped between the upper disc and the lower disc of the polishing disc, and the multiple sets of light beam assemblies are uniformly and spacedly arranged along the circumference of the polishing disc, that is, the multiple sets of light beam assemblies are uniformly and spacedly arranged along the circumference of the silicon carbide wafer. Thus, when the silicon carbide wafer is polished, the multiple sets of spacedly arranged light beam assemblies can fully and uniformly irradiate the silicon carbide wafer from each angle of the silicon carbide wafer, so as to avoid the situation that the silicon carbide wafer is not polished completely or uniformly due to machine vibration and the like.
[0015] Other features and advantages of the present disclosure will be described in detail in the following specific embodiments section. BRIEF DESCRIPTION OF DRAWINGS
[0016] The accompanying drawings are used to provide further understanding of the present disclosure and constitute a part of the specification, and are used to explain the present disclosure together with the following specific embodiments, but do not constitute a limitation on the present disclosure. In the drawings:
[0017] Figure 1 is a structural schematic diagram of the silicon carbide wafer polishing device provided by the present embodiment of the present disclosure;
[0018] Figure 2 is another structural schematic diagram of the silicon carbide wafer polishing device provided by the present embodiment of the present disclosure.
[0019] Explanation of Reference Signs
[0020] 1-polishing disc; 11-upper disc; 12-lower disc; 2-light beam assembly; 21-ultraviolet emitter; 22-supporting rod; 23-base; 24-time relay; 3-control unit; 4-column. DETAILED DESCRIPTION
[0021] The specific embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present disclosure, and are not used to limit the present disclosure.
[0022] In the present disclosure, the orientation words such as "upper" and "lower" used herein generally refer to the "upper" and "lower" in the direction of gravity when the corresponding components are in the use state. In addition, in the following description, the same reference signs in different drawings represent the same or similar elements unless otherwise explained. The above definition is only used to explain and illustrate the present disclosure, and should not be understood as a limitation on the present disclosure.
[0023] According to the specific implementation provided in the present disclosure, with reference to Figures 1 to 2 As shown in FIG. 1, a silicon carbide wafer polishing device is provided, which comprises a polishing disc 1 and a plurality of light beam assemblies 2. The polishing disc 1 comprises an upper disc 11 and a lower disc 12, and the silicon carbide wafer is clamped between the upper disc 11 and the lower disc 12. The plurality of light beam assemblies 2 are uniformly and spacedly arranged along the circumference of the polishing disc 1.
[0024] According to the above technical solution, in the silicon carbide wafer polishing device provided in the present disclosure, the polishing disc 1 and the plurality of light beam assemblies 2 are included, and the silicon carbide wafer is clamped between the upper disc 11 and the lower disc 12 of the polishing disc 1. The plurality of light beam assemblies 2 are uniformly and spacedly arranged along the circumference of the polishing disc 1, i.e., the plurality of light beam assemblies 2 are uniformly and spacedly arranged along the circumference of the silicon carbide wafer. Thus, when the silicon carbide wafer is polished, the plurality of spacedly arranged light beam assemblies 2 can fully and uniformly irradiate the silicon carbide wafer from each angle of the silicon carbide wafer, thereby avoiding the incomplete or uneven polishing of the silicon carbide wafer caused by machine vibration and the like.
[0025] In the silicon carbide wafer polishing device provided in the present disclosure, the light beam assembly 2 can be constructed in any suitable form, which is not specifically limited in the present disclosure. As an exemplary embodiment, with reference to Figure 2 As shown in FIG. 2, the light beam assembly 2 can comprise an ultraviolet emitter 21 and a base 23, and the ultraviolet emitter 21 can be fixed to the base 23 by a support rod 22. The ultraviolet emitter 21 can emit ultraviolet rays with different light intensities, and the silicon carbide wafer can accelerate the oxidation reaction on the surface under high oxygen by the ultraviolet cover, thereby facilitating the polishing device to remove the oxidation layer on the surface of the silicon carbide wafer. The ultraviolet emitter 21 is fixed to the base 23 by the support rod 22, which can make the ultraviolet emitter 21 away from the ground and close to the polishing disc 1, i.e., the silicon carbide wafer. Meanwhile, by adjusting the position of the base 23, the position of the ultraviolet emitter 21 can be adjusted, thereby avoiding the ultraviolet rays emitted by the ultraviolet emitter 21 being blocked by the stand 4 and the like. In addition, the support rod 22 can be constructed in any suitable form, such as a telescopic rod or a combination of a pneumatic cylinder and a piston rod, to further realize the flexibility of the position adjustment of the ultraviolet emitter 21 relative to the polishing disc 1.
[0026] In the silicon carbide wafer polishing device provided in the present disclosure, the ultraviolet emitter 21 can be constructed in any suitable form to achieve sufficient irradiation of the silicon carbide wafer, which is not specifically limited in the present disclosure. As an exemplary embodiment, with reference to Figure 1 or Figure 2As shown, the ultraviolet ray emitter 21 can be configured as a hemispherical emitter with an arc surface, and the arc surface can protrude towards the polishing disc 1. In this way, the ultraviolet ray can be emitted radially from the ultraviolet ray emitter 21 towards the polishing disc 1, i.e. the silicon carbide wafer, and thus the ultraviolet ray can have a relatively concentrated light within a certain angle range, so as to ensure the illumination intensity of the ultraviolet ray on the silicon carbide wafer. In addition, a certain amount of light intensity can still be maintained within a limited angle range outside the strong light range, so that when the polishing device vibrates or shakes accidentally during the operation process, the position of the silicon carbide wafer relative to the ultraviolet ray emitter changes, the ultraviolet ray emitter 21 can still provide a certain amount of ultraviolet light to the silicon carbide wafer, reducing the influence of the vibration of the polishing machine during the operation process, realizing sufficient illumination of the silicon carbide wafer, and improving the stability of the polishing operation of the polishing device.
[0027] In the above embodiment, the ultraviolet ray emitter 21 can be configured as a hemispherical emitter with an arc surface. In other embodiments, the ultraviolet ray emitter 21 can be configured as any suitable shape, and the present disclosure does not make specific limitations thereon. As an exemplary embodiment, the ultraviolet ray emitter 21 can be configured as a spherical body, as shown in Figure 1 or Figure 2 As shown, the ultraviolet ray emitter 21 can be configured as a hemispherical emitter with an arc surface, and the arc surface can protrude towards the polishing disc 1. In this way, the ultraviolet ray can be emitted radially from the ultraviolet ray emitter 21 towards the polishing disc 1, i.e. the silicon carbide wafer, and thus the ultraviolet ray can have a relatively concentrated light within a certain angle range, so as to ensure the illumination intensity of the ultraviolet ray on the silicon carbide wafer. In addition, a certain amount of light intensity can still be maintained within a limited angle range outside the strong light range, so that when the polishing device vibrates or shakes accidentally during the operation process, the position of the silicon carbide wafer relative to the ultraviolet ray emitter changes, the ultraviolet ray emitter 21 can still provide a certain amount of ultraviolet light to the silicon carbide wafer, reducing the influence of the vibration of the polishing machine during the operation process, realizing sufficient illumination of the silicon carbide wafer, and improving the stability of the polishing operation of the polishing device.
[0028] In the above embodiment, the ultraviolet ray emitter 21 can be configured as a hemispherical emitter with an arc surface. In other embodiments, the ultraviolet ray emitter 21 can be configured as any suitable shape, and the present disclosure does not make specific limitations thereon. As an exemplary embodiment, the ultraviolet ray emitter 21 can be configured as a spherical body, as shown in Figure 1 or Figure 2 As shown, the ultraviolet ray emitter 21 can be configured as a hemispherical emitter with an arc surface, and the arc surface can protrude towards the polishing disc 1. In this way, the ultraviolet ray can be emitted radially from the ultraviolet ray emitter 21 towards the polishing disc 1, i.e. the silicon carbide wafer, and thus the ultraviolet ray can have a relatively concentrated light within a certain angle range, so as to ensure the illumination intensity of the ultraviolet ray on the silicon carbide wafer. In addition, a certain amount of light intensity can still be maintained within a limited angle range outside the strong light range, so that when the polishing device vibrates or shakes accidentally during the operation process, the position of the silicon carbide wafer relative to the ultraviolet ray emitter changes, the ultraviolet ray emitter 21 can still provide a certain amount of ultraviolet light to the silicon carbide wafer, reducing the influence of the vibration of the polishing machine during the operation process, realizing sufficient illumination of the silicon carbide wafer, and improving the stability of the polishing operation of the polishing device.
[0029] As shown, the ultraviolet ray emitter 21 can be configured as a hemispherical emitter with an arc surface, and the arc surface can protrude towards the polishing disc 1. In this way, the ultraviolet ray can be emitted radially from the ultraviolet ray emitter 21 towards the polishing disc 1, i.e. the silicon carbide wafer, and thus the ultraviolet ray can have a relatively concentrated light within a certain angle range, so as to ensure the illumination intensity of the ultraviolet ray on the silicon carbide wafer. In addition, a certain amount of light intensity can still be maintained within a limited angle range outside the strong light range, so that when the polishing device vibrates or shakes accidentally during the operation process, the position of the silicon carbide wafer relative to the ultraviolet ray emitter changes, the ultraviolet ray emitter 21 can still provide a certain amount of ultraviolet light to the silicon carbide wafer, reducing the influence of the vibration of the polishing machine during the operation process, realizing sufficient illumination of the silicon carbide wafer, and improving the stability of the polishing operation of the polishing device.
[0030] In the silicon carbide wafer polishing device provided in the present disclosure, as an exemplary embodiment, the ultraviolet emitter 21 can have multiple light intensities. In this way, the ultraviolet emitter 21 can be adjusted to different light intensities according to the actual size of the silicon carbide wafer and different polishing requirements, so as to meet different requirements for the use of ultraviolet light in the polishing process. In the present disclosure, the ultraviolet emitter 21 can have three different frequency adjustment modes to achieve adjustment of the light intensity, which are: light intensity 790~830mW / cm 2 , wavelength 360~400nm; light intensity 830~860mW / cm 2 , wavelength 320~360nm; and light intensity 860~890mW / cm 2 , wavelength 280~320nm.
[0031] In the silicon carbide wafer polishing device provided in the present disclosure, the light beam assemblies 2 can be uniformly spaced at any suitable angle on the circumference of the polishing disc 1, and the present disclosure does not make specific limitations. As an exemplary embodiment, the interval between two adjacent light beam assemblies 2 can be 60°. That is, the number of light beam assemblies 2 is 6 groups, and the two adjacent light beam assemblies 2 in the 6 groups of light beam assemblies 2 are uniformly arranged on the circumference of the polishing disc 1 with an interval of 60°, so as to ensure that the silicon carbide wafer clamped between the upper disc 11 and the lower disc 12 of the polishing disc 1 can be irradiated by the ultraviolet light emitted by the ultraviolet emitter 21 in all directions, improve the uniformity of the ultraviolet irradiation of the silicon carbide wafer, and further improve the uniformity of the polishing of the silicon carbide wafer. In other embodiments, the number of light beam assemblies 2 can also be 4 groups, and the interval between two adjacent light beam assemblies 2 can be 90°, or the number of light beam assemblies 2 can also be 8 groups, and the interval between two adjacent light beam assemblies 2 can be 45°, which can all achieve uniform irradiation of the silicon carbide wafer, and the present disclosure does not make specific limitations.
[0032] In the silicon carbide wafer polishing device provided in the present disclosure, as an exemplary embodiment, as shown in Figure 2 , the silicon carbide wafer polishing device can include a control unit 3, and each of the plurality of light beam assemblies 2 is electrically connected to the control unit 3. In this way, the control unit 3 can be used to simultaneously turn on and turn off the plurality of light beam assemblies 2, further improving the uniformity of the irradiation of the silicon carbide wafer by the light beam assemblies 2, and the ultraviolet emitter 21 can also be controlled to switch between multiple different light intensity modes to adapt to different ultraviolet light requirements.
[0033] In addition, the light beam assembly 2 can further include a time relay 24, and the ultraviolet emitter 21 can be electrically connected to the control unit 3 through the time relay 24. In this way, through cooperation of the control unit 3 and the time relay 24, not only the control of the light irradiation time of the light beam assembly 2 can be realized, but also the control of the light irradiation intensity of the light beam assembly 2 at different time periods can be realized, so as to meet different requirements of the ultraviolet light irradiation of the silicon carbide wafer at different polishing stages. In the present disclosure, the control unit 3 can also be electrically connected to the polishing disc 1, so as to control the start and end of the polishing of the silicon carbide wafer by the polishing disc 1, and improve the automation degree of the polishing device.
[0034] In the silicon carbide wafer polishing device provided in the present disclosure, as an exemplary embodiment, referring to FIG. 1, Figure 2 Figure 2 As shown in FIG. 1, the silicon carbide wafer polishing device can further include a column 4, the column 4 can be supported above the polishing disc 1, and the control unit 3 can be installed on the column 4 and electrically connected to the polishing disc 1. In this way, the column 4 provides a carrier for installation of the polishing disc 1, the control unit 3 and the time relay 24, and the column 4 can be arranged in a manner of avoiding the irradiation of the light beam assembly 2, so as to avoid the uneven polishing of the silicon carbide wafer caused by the shielding of the ultraviolet light irradiation.
[0035] The preferred embodiments of the present disclosure are described in detail above with reference to the accompanying drawings, but the present disclosure is not limited to the specific details in the above-described embodiments. Within the technical concept of the present disclosure, various simple modifications can be made to the technical solutions of the present disclosure, and these simple modifications all belong to the protection scope of the present disclosure.
[0036] In addition, it should be noted that each specific technical feature described in the above-described specific embodiments can be combined in any appropriate manner without contradiction, and in order to avoid unnecessary repetition, the present disclosure will not further describe various possible combination manners.
[0037] In addition, various different embodiments of the present disclosure can also be combined in any manner, as long as they do not deviate from the idea of the present disclosure, and they should also be considered as disclosed in the present disclosure.
Claims
1. A silicon carbide wafer polishing apparatus, characterized in that, The polishing device comprises a polishing disc and a plurality of light beam assemblies, the polishing disc comprises an upper disc and a lower disc, and a silicon carbide wafer is clamped between the upper disc and the lower disc, and the plurality of light beam assemblies are uniformly spaced along the circumference of the polishing disc.
2. The silicon carbide wafer polishing apparatus of claim 1, wherein, The light beam assembly comprises an ultraviolet emitter and a base, and the ultraviolet emitter is fixed to the base by a support rod.
3. The silicon carbide wafer polishing apparatus of claim 2, wherein, The ultraviolet emitter is configured as a hemispherical emitter with an arc-shaped surface, and the arc-shaped surface is arranged towards the polishing disc.
4. The silicon carbide wafer polishing apparatus of claim 3, wherein, The diameter of the base is greater than the diameter of the hemispherical emitter.
5. The silicon carbide wafer polishing apparatus of claim 4, wherein, The difference between the diameter of the base and the diameter of the hemispherical emitter is less than the diameter of the hemispherical emitter.
6. The silicon carbide wafer polishing apparatus of claim 2, wherein, The ultraviolet emitter has a plurality of different light intensities.
7. The silicon carbide wafer polishing apparatus of any one of claims 1-6, wherein, The interval between two adjacent light beam assemblies is 60°.
8. The silicon carbide wafer polishing apparatus of claim 2, wherein, The polishing device for silicon carbide wafer comprises a control unit, and each light beam assembly is electrically connected to the control unit.
9. The silicon carbide wafer polishing apparatus of claim 8, wherein, The light beam assembly comprises a time relay, and the ultraviolet emitter is electrically connected to the control unit through the time relay.
10. The silicon carbide wafer polishing apparatus of claim 8, wherein, The polishing device for silicon carbide wafer comprises a column, the column is supported above the polishing disc, the control unit is installed on the column and is electrically connected to the polishing disc.