Ion implanter and semiconductor manufacturing equipment
By designing the ion implanter with a vertically layered layout, the particle contamination problem of the ion implanter is solved by using gravity to cause particles to settle to the lower layer, thereby improving product yield and optimizing space utilization.
Patent Information
- Application Number
- CN202423119801.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-17
- Publication Date
- 2026-01-13
- Estimated Expiration
- 2034-12-17
AI Technical Summary
Existing ion implanters are prone to particulate contamination during the ion implantation process, which affects product yield. They also occupy a large space and may affect the cleanliness of the cleanroom during maintenance.
The ion implanter is divided into a vertically layered layout, with the first functional area located on the lower layer and the second functional area on the upper layer. The cleanliness of the second functional area is higher than that of the first functional area. When the ion beam is transmitted upward, gravity causes the particles to settle into the first functional area, reducing the risk of particle contamination.
It effectively reduces the risk of particulate contamination during the ion implantation process, improves product yield, reduces space occupation, and minimizes the impact on cleanroom cleanliness.
Smart Images
Figure CN223797333U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor equipment, specifically to an ion implanter and semiconductor manufacturing equipment. Background Technology
[0002] An ion implanter is a precision semiconductor manufacturing device used to implant specific types of ions into semiconductor materials to alter their electrical properties. However, the ion implantation process can cause particulate contamination of the semiconductor material, affecting product yield. Against this backdrop, how to provide a novel ion implanter structure that can effectively reduce the risk of particulate contamination during the ion implantation process and improve product yield has become a pressing problem for those skilled in the art. Utility Model Content
[0003] In view of this, embodiments of this application provide an ion implanter and semiconductor manufacturing equipment, which can effectively reduce the risk of particulate contamination caused during ion implantation and improve product yield.
[0004] To achieve the above objectives, the embodiments of this application provide the following technical solutions.
[0005] In a first aspect, embodiments of this application provide an ion implanter, wherein the machine platform of the ion implanter is divided into a first functional area and a second functional area, the first functional area and the second functional area are vertically layered, with the first functional area located on the lower layer and the second functional area located on the upper layer; the cleanliness of the second functional area is higher than that of the first functional area.
[0006] The first functional area is configured with:
[0007] An ion source that produces ions;
[0008] The ions generated by the ion source are screened to form an ion beam, and the ion beam is transmitted upward to the beam screening area of the second functional region.
[0009] The second functional area is configured with:
[0010] A process chamber that receives the ion beam transmitted from the beam screening region and performs ion implantation on the material to be implanted.
[0011] Optionally, the first functional area is further provided with a first conduit connecting the ion source and the beam screening area, and a portion of a second conduit for transmitting the ion beam upward.
[0012] The second functional area is also provided with another part of the second pipe, which passes through the first functional area and the second functional area;
[0013] The beam screening area includes a beam channel, which connects the first pipe and the second pipe located in the first functional area, and the ion beam in the beam channel flows in a vertical direction.
[0014] Optionally, the ion implanter may further include a partition that isolates the first functional area and the second functional area.
[0015] Optionally, the partition is provided with a through-hole that connects the first functional area and the second functional area, and the second pipe passes through the through-hole to pass through the first functional area and the second functional area.
[0016] Optionally, the ion implanter platform further includes: a bottom load-bearing floor supporting the first functional area, the bottom load-bearing floor being located at the bottom of the first functional area and in contact with the ground.
[0017] Optionally, the process chamber includes:
[0018] A target chamber for placing the material to be implanted for ion implantation;
[0019] The transfer area is used to transfer the material to be implanted into the target chamber, or to remove the material that has been implanted into the target chamber.
[0020] Optionally, load-bearing structures are provided on both sides of the outer side of the target chamber, and the load-bearing structures are load-bearing columns or load-bearing frames.
[0021] Optionally, a seal is provided at the connection point between the beam channel and the first pipe and the second pipe.
[0022] Optional, also includes:
[0023] An airflow guiding device located in the first duct.
[0024] Secondly, embodiments of this application provide a semiconductor manufacturing apparatus, including an ion implanter, which is the ion implanter described above.
[0025] As can be seen, the ion implanter provided in this embodiment is divided into a first functional area and a second functional area, and the first and second functional areas are arranged in a vertically layered layout. The first functional area is located in the lower layer, and the second functional area is located in the upper layer, with the second functional area having a higher cleanliness level than the first functional area. Specifically, the first functional area is equipped with an ion source for generating ions, and a beam filtering area for filtering the ions generated by the ion source and transmitting the ion beam upwards to the beam filtering area of the second functional area. The second functional area is equipped with a process chamber for receiving the ion beam transmitted from the beam filtering area and performing ion implantation on the material to be implanted. Since the ion beam is transmitted upwards through the beam filtering area in the lower first functional area to the process chamber in the upper second functional area, gravity causes particles to settle in the first functional area during upward transmission, thereby reducing the risk of particle contamination during ion implantation in the process chamber of the second functional area. In other words, gravity causes particles generated by ion implantation to settle in the first functional area during upward transmission, preventing them from being carried to the second functional area, which has a higher cleanliness level than the first functional area, thus reducing the risk of particle contamination and improving product yield. Attached Figure Description
[0026] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.
[0027] Figure 1 This is an example diagram of an optional structure of an ion implanter shown in an embodiment of this application;
[0028] Figure 2 This is an example diagram of another optional structure of the ion implanter shown in the embodiments of this application. Detailed Implementation
[0029] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.
[0030] An ion implanter is a key piece of equipment used in semiconductor manufacturing. It alters the electrical properties of semiconductor materials (such as wafers) by implanting specific types of ions into them. The ion implantation process allows for precise control of the dosage and depth of dopants, thereby enabling fine-tuning of the performance of semiconductor devices.
[0031] Currently, one type of ion implanter has a horizontal structure. In a horizontal ion implanter, the direction of the ion beam generated in the cavity is horizontal. The horizontal ion beam is implanted into the surface of a semiconductor material (such as a wafer), thereby realizing the ion implantation function.
[0032] However, although the aforementioned ion implanter can achieve ion implantation, the horizontal ion beam implantation into semiconductor materials may carry particles, causing particle contamination and affecting product yield. At the same time, since the ion implanter has a horizontal structure and the maintenance area is located in a high-cleanliness cleanroom, the ion implanter occupies a large amount of cleanroom space, and the cavity needs to be opened when maintaining the ion implanter, and the particles brought out may affect the cleanliness of the cleanroom.
[0033] In view of this, embodiments of this application provide a novel structure for an ion implanter, which can effectively reduce the risk of particulate contamination during ion implantation and improve product yield.
[0034] Figure 1 This is an example diagram of an optional structure of an ion implanter shown in an embodiment of this application, with reference to... Figure 1 The ion implanter can be divided into a first functional area 100 and a second functional area 200. The first functional area 100 and the second functional area 200 are vertically layered, with the first functional area 100 located on the lower layer and the second functional area 200 located on the upper layer. The cleanliness of the second functional area 200 is higher than that of the first functional area 100.
[0035] The first functional area 100 is provided with: an ion source 110 for generating ions; ions generated by the ion source are screened to form an ion beam, and the ion beam is transmitted upward to the beam screening area 120 of the second functional area; wherein, when the ion beam is transmitted upward, the effect of gravity causes the particles to settle into the first functional area.
[0036] The ion source is the core component of an ion implanter, used to generate specific types of ions. In optional implementations, atoms or molecules in a substance can be ionized into ions using ionization techniques, and the ionized ions can be bundled together to prepare for subsequent acceleration and ion implantation.
[0037] The beam screening region can adjust the shape and distribution of the ion beam to meet the requirements of subsequent processes; at the same time, the beam screening region may also include an accelerator for adjusting the energy of the ion beam so that the ion beam can reach the energy required for upward transmission to the second functional region for ion implantation.
[0038] The second functional area 200 is provided with a process chamber 210 for receiving the ion beam transmitted from the beam screening area and for ion implantation of the material to be implanted.
[0039] The ion implanter provided in this embodiment is divided into a first functional area and a second functional area, which are arranged in a vertical layered layout. The first functional area is located in the lower layer, and the second functional area is located in the upper layer, with a higher cleanliness level than the first functional area. Specifically, the first functional area is equipped with an ion source for generating ions and a beam filtering area for filtering the ions generated by the ion source and transmitting the ion beam upward to the beam filtering area of the second functional area. The second functional area is equipped with a process chamber for receiving the ion beam transmitted from the beam filtering area and performing ion implantation on the material to be implanted. Since the ion beam is transmitted upward through the beam filtering area in the lower first functional area to the process chamber in the upper second functional area, gravity causes particles to settle in the first functional area during upward transmission, thereby reducing the risk of particle contamination during ion implantation in the process chamber of the second functional area. In other words, gravity causes particles generated by ion implantation to settle in the first functional area during upward transmission, preventing them from being carried to the second functional area, which has a higher cleanliness level, thus reducing the risk of particle contamination and improving product yield. Meanwhile, in this embodiment, the vertically layered layout of the first functional area and the second functional area can also reduce space occupation.
[0040] In the optional implementation, continue to refer to Figure 1 The first functional area 100 is also provided with a first conduit 310 connecting the ion source 110 and the beam screening area 120, and a portion of a second conduit 320 for transmitting the ion beam upward.
[0041] Optionally, the ion implanter further includes an airflow guiding device located in the first conduit 310; the airflow guiding device can control the flow rate and direction of the airflow through airflow regulation, and plays a role in guiding the airflow in the first conduit, which helps the airflow to keep the direction of the ion beam consistent and avoids the airflow from interfering with the ion beam; and can provide a certain driving force during the upward transmission of the ion beam to ensure that the ion beam is transmitted along a predetermined trajectory.
[0042] In this embodiment of the application, the airflow guiding device can be disposed inside the first pipe, specifically at a key location inside the first pipe (such as a bend, joint, or channel opening).
[0043] The second functional area 200 is also provided with another part of the second pipe 320, which passes through the first functional area 100 and the second functional area 200.
[0044] The beam screening area 120 includes a beam channel (not shown in the figure), which connects the first pipe 310 and the second pipe 320 located in the first functional area, and the ion beam in the beam channel flows in a vertical direction.
[0045] In this embodiment of the application, the ion beam in the beam channel within the beam screening area flows vertically, thereby ensuring that the ion beam in the first functional area can be transmitted upward to the second functional area. Furthermore, the effect of gravity can be used to allow particles that may be carried by the ion beam during its upward transmission to settle into the first functional area, ensuring that the second functional area, which has a higher cleanliness level than the first functional area, can reduce the risk of particulate contamination.
[0046] Furthermore, a sealing element (such as a sealing ring or sealing ring) may be provided at the connection position between the beam channel and the first pipe and the second pipe to further prevent airflow leakage and reduce the risk of external pollution.
[0047] In an optional implementation, the ion implanter further includes a partition 400 that isolates the first functional region 100 and the second functional region 200; and the partition 400 has a through-hole (not shown in the figure) that connects the first functional region 100 and the second functional region 200, through which the second conduit 320 passes.
[0048] Continue to refer to Figure 1 The ion implanter also includes a bottom load-bearing floor 500 that supports the first functional area 100. The bottom load-bearing floor 500 is located at the bottom of the first functional area and is in contact with the ground.
[0049] Furthermore, Figure 2 This is an example diagram of another optional structure of the ion implanter shown in the embodiments of this application, wherein, Figure 2 Based on Figure 1 The top view of the ion implanter shown is as follows: Figure 2 As shown in the embodiment of this application, the process cavity 210 may include: a target chamber 211 and a transfer area 212.
[0050] In an optional implementation, the target chamber 211 can be used to place the material to be implanted (e.g., a wafer) for ion implantation. Inside the target chamber, the ion beam can be precisely guided to the surface of the material to achieve ion implantation.
[0051] Optionally, the transfer area 212 can be used to transfer the material to be implanted to the target chamber, or to remove the material that has been implanted (e.g., a wafer that has been implanted) from the target chamber.
[0052] In an alternative embodiment, the transfer zone can safely and accurately transfer the material to be implanted (e.g., a wafer) from an external environment (e.g., a loading stage) to the target chamber, and transfer the wafer from the target chamber back to the external environment after ion implantation is complete; the design of the transfer zone can ensure that the material to be implanted is not contaminated during the transfer process, while maintaining precise positioning to ensure that the ion beam can be accurately implanted to the predetermined location of the material to be implanted.
[0053] In other words, the target chamber is the area where ion implantation occurs, while the transport zone is the area where the material to be implanted moves and is positioned inside the ion implanter. Together, they ensure the smooth progress of the ion implantation process.
[0054] In the optional implementation, continue to refer to Figure 2 The target chamber 211 is provided with load-bearing structures 213 on both sides of its exterior. The load-bearing structures 213 can be load-bearing columns or load-bearing frames to ensure structural rigidity and load-bearing capacity, and to support and fix the target chamber.
[0055] Furthermore, the ion implanter provided in this embodiment is also equipped with auxiliary facilities such as ladders and operating platforms to facilitate the maintenance and repair of the ion implanter.
[0056] As can be seen, the ion implanter provided in this embodiment is divided into a first functional area and a second functional area, and the first and second functional areas are arranged in a vertically layered layout. The first functional area is located in the lower layer, and the second functional area is located in the upper layer, with the second functional area having a higher cleanliness level than the first functional area. Specifically, the first functional area is equipped with an ion source for generating ions, and a beam filtering area for filtering the ions generated by the ion source and transmitting the ion beam upwards to the beam filtering area of the second functional area. The second functional area is equipped with a process chamber for receiving the ion beam transmitted from the beam filtering area and performing ion implantation on the material to be implanted. Since the ion beam is transmitted upwards through the beam filtering area in the lower first functional area to the process chamber in the upper second functional area, gravity causes particles to settle in the first functional area during upward transmission, thereby reducing the risk of particle contamination during ion implantation in the process chamber of the second functional area. In other words, gravity causes particles generated by ion implantation to settle in the first functional area during upward transmission, preventing them from being carried to the second functional area, which has a higher cleanliness level than the first functional area, thus reducing the risk of particle contamination and improving product yield.
[0057] This application also provides a semiconductor manufacturing apparatus, including an ion implanter, which is the ion implanter described in the foregoing embodiments.
[0058] The foregoing describes multiple embodiment schemes provided by the embodiments of this application. The optional methods described in each embodiment scheme can be combined and cross-referenced with each other without conflict, thereby extending to a variety of possible embodiment schemes. These can all be considered as the embodiment schemes disclosed and published by the embodiments of this application.
[0059] While the embodiments disclosed above are described in this application, this application is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of this application; therefore, the scope of protection of this application should be determined by the scope defined in the claims.
Claims
1. An ion implanter, comprising: The ion implanter includes a first functional area and a second functional area, the first functional area and the second functional area are vertically layered, the first functional area is at a lower layer, and the second functional area is at an upper layer; the second functional area has a higher cleanliness than the first functional area; The first functional area includes: An ion source for generating ions; A beam selection area for selecting ions generated by the ion source to form an ion beam and transmitting the ion beam upward to the second functional area; The second functional area includes: A process chamber for ion implantation of a material to be implanted.
2. The ion implanter of claim 1, wherein, The first functional area further includes a first pipe connecting the ion source and the beam selection area, and a part of a second pipe for upward transmission of the ion beam; The second functional area further includes another part of the second pipe, and the second pipe passes through the first functional area and the second functional area; The beam selection area includes a beam passage, the beam passage connects the first pipe and the part of the second pipe in the first functional area, and the ion beam in the beam passage flows vertically.
3. The ion implanter of claim 2, wherein, The ion implanter further includes a partition plate separating the first functional area and the second functional area.
4. The ion implanter of claim 3, wherein, The partition plate has a through hole passing through the first functional area and the second functional area, and the second pipe passes through the first functional area and the second functional area through the through hole.
5. The ion implanter of claim 1, wherein, The ion implanter further includes a bottom load-bearing floor bearing the first functional area, the bottom load-bearing floor is located at the bottom of the first functional area and contacts the ground.
6. The ion implanter of claim 1, wherein, The process chamber includes: A target chamber for placing a material to be implanted for ion implantation; A transfer area for transferring the material to be implanted for ion implantation to the target chamber or removing the material after ion implantation from the target chamber.
7. The ion implanter of claim 6, wherein, Both sides of the target chamber are provided with load-bearing structures, which are load-bearing columns or load-bearing frames.
8. The ion implanter of claim 2, wherein, The connection position of the beam passage connecting the first pipe and the second pipe is provided with a sealing member.
9. The ion implanter of claim 2, wherein, The ion implanter further includes: An air flow guide device inside the first pipe.
10. A semiconductor manufacturing apparatus, characterized by comprising: An ion implanter, such as the ion implanter of any one of claims 1-9.