Wafer processing device
By designing multiple exhaust pipes and vacuum pump modes in the wafer processing unit, the problem of increased oxygen concentration affecting film quality was solved, achieving rapid reduction of oxygen concentration and improving production efficiency and product yield.
Patent Information
- Application Number
- CN202520009512.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-02
- Publication Date
- 2026-01-13
- Estimated Expiration
- 2035-01-02
AI Technical Summary
In existing furnace tube machines, the oxygen concentration increases during wafer transfer, affecting film quality and product yield. Furthermore, the process of extracting oxygen through the plant exhaust system is time-consuming and results in low production efficiency.
A wafer processing device was designed, comprising furnace tubes, loading and unloading areas, wafer transfer chambers, and multiple exhaust pipes. By utilizing different modes of vacuum pumps to extract gases from the loading and unloading areas and furnace tubes, combined with the plant exhaust system, the oxygen concentration is rapidly reduced, thereby improving production efficiency.
This enabled the oxygen concentration in the loading and unloading area to be reduced to a preset value in a shorter time, thereby improving the production efficiency and product yield of the wafer processing unit.
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Figure CN223798636U_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of semiconductor manufacturing equipment technology, and specifically relates to a wafer processing apparatus. Background Technology
[0002] The existing furnace tube machine includes a process furnace tube, a loading / unloading area, and a wafer transfer chamber. The loading / unloading area is equipped with a wafer boat and a wafer boat elevator. A transfer port is located between the loading / unloading area and the wafer transfer chamber. When the furnace tube machine is operating, wafer cassettes are transferred to the wafer transfer chamber. The wafers in the wafer cassettes are then transferred to the wafer boat in the loading / unloading area through the transfer port. The wafer boat elevator then sends the wafers on the wafer boat into the furnace tube for processing.
[0003] During the process of transferring wafers to the wafer boat through the transfer port, oxygen from the wafer box flows into the loading and unloading area, causing an increase in oxygen concentration in the loading and unloading area. When the sealed door of the furnace tube is opened and the wafers on the wafer boat are sent into the furnace tube for processing, oxygen flows into the furnace tube, affecting the film formation quality and product yield during wafer processing.
[0004] The existing furnace tube machine connects the loading and unloading area to the plant exhaust system, which extracts oxygen through the plant system. However, extracting oxygen through the plant system is time-consuming, has low production efficiency, and can never achieve the preset oxygen concentration in the loading and unloading area. This affects the film quality and product yield when the furnace tube machine is used for thin film deposition. Utility Model Content
[0005] The purpose of this application is to provide a wafer processing apparatus to improve the production efficiency and product yield of the wafer processing apparatus.
[0006] To achieve the above objectives, this application provides a wafer processing apparatus, comprising:
[0007] Furnace tubes are used to provide chambers for processing wafers;
[0008] The loading and unloading area is located below the furnace tube. The loading and unloading area is equipped with a crystal boat and a crystal boat loading and unloading machine. The crystal boat is used to load wafers, and the crystal boat loading and unloading machine is used to move the crystal boat into or out of the furnace tube.
[0009] The wafer transfer chamber is connected to the loading and unloading area via a transfer port. The loading and unloading area is also equipped with a wafer loading and unloading machine, which is used to transfer wafers between the wafer boat and the wafer cassette in the wafer transfer chamber.
[0010] The first exhaust pipe has a first end that is directly or indirectly connected to the loading and unloading area, and a second end that is connected to a vacuum pump, which is also connected to the chamber of the furnace tube.
[0011] The vacuum pump is configured to operate in a first mode and a second mode:
[0012] When the vacuum pump is in the first mode, it is used to draw gas from the chamber of the furnace tube to control the process pressure; when the vacuum pump is in the second mode, it is used to draw gas from the loading and unloading area to control the oxygen concentration inside the loading and unloading area.
[0013] The second exhaust pipe has a first end connected to the loading and unloading area and a second end connected to the plant exhaust system.
[0014] Optionally, the first exhaust pipe is indirectly connected to the loading and unloading area via the second exhaust pipe.
[0015] Optionally, the second exhaust pipeline includes a connecting pipe, an electric switching valve, and a second exhaust pipe, wherein the connecting pipe, the electric switching valve, and the second exhaust pipe are connected in sequence, the end of the connecting pipe away from the electric switching valve is connected to the loading and unloading area, and the end of the second exhaust pipe away from the electric switching valve is connected to the plant exhaust system. The first exhaust pipeline includes a first exhaust pipe and at least one of the electric switching valves disposed on the first exhaust pipe, the first end of the first exhaust pipe is connected to the connecting pipe through a tee connector, and the second end of the first exhaust pipe is connected to the vacuum pump.
[0016] Optionally, the second exhaust pipeline includes a connecting pipe, a two-position three-way solenoid valve, and a second exhaust pipe. The two-position three-way solenoid valve includes an intake end, a first exhaust end, and a second exhaust end. The intake end is connected to the loading and unloading area through the connecting pipe, and the first exhaust end is connected to the plant exhaust system through the second exhaust pipe. The first exhaust pipeline includes at least a first exhaust pipe, and the second exhaust end is connected to the vacuum pump through the first exhaust pipe.
[0017] Optionally, the wafer processing apparatus further includes a controller, with both the first exhaust pipe and the second exhaust pipe connected to the controller. The controller includes a first state and a second state. In the first state, the controller controls the electrically controlled valve in the first exhaust pipe to open, so that the gas in the loading and unloading area is discharged at least through the vacuum pump. In the second state, the controller controls the electrically controlled valve in the second exhaust pipe to open, so that the gas in the loading and unloading area is discharged through the plant exhaust system.
[0018] Optionally, the wafer processing apparatus further includes a trigger, which is disposed on the furnace tube or the wafer boat loading and unloading machine. When the wafer boat loading and unloading machine moves the wafer boat into the furnace tube, the trigger outputs a control signal to the controller, and the controller switches from the first state to the second state.
[0019] Optionally, the wafer processing apparatus further includes a third exhaust pipe, which includes a third exhaust pipe and an oxygen concentration detector. The oxygen concentration detector is mounted on the third exhaust pipe, which connects the loading / unloading area, the wafer transfer chamber, and the plant exhaust system. The oxygen concentration detector is connected to the controller, and when the oxygen concentration detected by the oxygen concentration detector is less than a preset value, the controller switches from the first state to the second state.
[0020] Optionally, the wafer transfer chamber and the second exhaust pipe are connected to opposite sides of the loading and unloading area.
[0021] Optionally, the wafer processing apparatus further includes a fourth exhaust line, which includes a fourth exhaust pipe connected to the vacuum pump and the furnace tube, and the first exhaust line is connected to the fourth exhaust pipe.
[0022] Optionally, the fourth exhaust pipe further includes two electrically operated valves, which are disposed on the fourth exhaust pipe. The first exhaust pipe is connected to the fourth exhaust pipe via a tee connector, which is located between the two electrically operated valves.
[0023] The wafer processing apparatus disclosed in this application has the following beneficial effects:
[0024] In this application, the wafer processing apparatus includes a furnace tube, a loading / unloading area, a wafer transfer chamber, and a first exhaust pipe. The loading / unloading area is located below the furnace tube and is equipped with a wafer boat and a wafer boat loading / unloading machine. The wafer boat loading / unloading machine is used to move the wafer boat into or out of the furnace tube. The wafer transfer chamber is connected to the loading / unloading area through a transfer port. The loading / unloading area is also equipped with a wafer loading / unloading machine, which is used for transferring wafers between wafer cassettes in the wafer boat and the wafer transfer chamber. The first end of the first exhaust pipe is directly or indirectly connected to the loading / unloading area, and the second end of the first exhaust pipe is connected to a vacuum pump. The vacuum pump is also connected to the chamber of the furnace tube. Compared with the plant exhaust system, the vacuum pump has a stronger pumping capacity and can pump the oxygen concentration in the loading / unloading area to a lower level in a shorter time, so that the oxygen concentration in the loading / unloading area reaches the preset oxygen concentration, which can improve the production efficiency and product yield of the wafer processing apparatus.
[0025] Other features and advantages of this application will become apparent from the following detailed description, or may be learned in part from practice of this application.
[0026] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description
[0027] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.
[0028] Figure 1 This is a schematic diagram of the structure of the wafer processing apparatus in the embodiments of this application.
[0029] Figure 2 This is a graph showing the trend of oxygen concentration in the loading and unloading area as a function of the plant exhaust system over time, as described in this embodiment of the application.
[0030] Figure 3 This is a trend graph showing the change of oxygen concentration in the exhaust gas from the loading and unloading area via the plant exhaust system over time, according to another embodiment of this application.
[0031] Explanation of reference numerals in the attached figures:
[0032] 100. Furnace tube; 110. Reaction chamber; 120. Sealed door;
[0033] 200. Loading and unloading area; 210. Crystal boat;
[0034] 300. Wafer Transfer Room;
[0035] 410, First exhaust pipe; 411, First exhaust pipe; 420, Second exhaust pipe; 421, Connecting pipe; 422, Second exhaust pipe; 430, Third exhaust pipe; 431, Third exhaust pipe; 432, Oxygen concentration detector; 440, Fourth exhaust pipe; 441, Fourth exhaust pipe; 450, First exhaust branch; 460, Second exhaust branch;
[0036] 510. First intake pipe; 511. Filter; 512. Manual on / off valve; 513. Pressure regulating valve; 514. Mass flow controller; 515. Electric on / off valve; 516. Barometer; 520. Second intake pipe; 521. Flow meter; 530. Third intake pipe; 540. Fourth intake pipe; 550. Fifth intake pipe; 551. First intake branch; 552. Second intake branch;
[0037] 610. Vacuum pump; 620. Plant exhaust system; 630. Exhaust gas treatment device. Detailed Implementation
[0038] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided to make this application more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art.
[0039] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.
[0040] The present application will now be described in further detail with reference to the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present application, and should not be construed as limiting the present application.
[0041] See Figure 1 As shown, the wafer processing apparatus in this embodiment includes a furnace tube 100, a loading / unloading area 200, a wafer transfer chamber 300, and a first exhaust pipe 410. The loading / unloading area 200 is located below the furnace tube 100 and is equipped with a wafer boat 210 and a wafer boat loading / unloading machine (not shown). The wafer boat loading / unloading machine is used to move the wafer boat 210 into or out of the furnace tube 100. The wafer boat 210 is used to carry wafers, and the wafer boat loading / unloading machine is used to move the wafer carried by the wafer boat 210 into the furnace tube 100 for processing. After processing, the wafer carried by the wafer boat 210 is moved out of the furnace tube 100. The furnace tube 100 provides a chamber for processing wafers and includes at least a reaction chamber 110. One end of the reaction chamber 110 is open. The wafer boat loading / unloading machine moves the wafer boat 210 into the reaction chamber 110, and the wafer boat 210 or the wafer boat loading / unloading machine seals the open end of the reaction chamber 110.
[0042] The wafer transfer chamber 300 is connected to the loading / unloading area 200 via a transfer port, which includes a FIMS (Front-Opening Interface Mechanical Standard) device. At least one wafer transfer chamber 300 is provided; this embodiment describes two wafer transfer chambers 300. The loading / unloading area 200 is also equipped with a wafer loading / unloading machine (not shown), which is used to transfer wafers between the wafer boat 210 and the wafer cassette in the wafer transfer chamber 300. Specifically, the wafer loading / unloading machine transfers unprocessed wafers from the wafer cassette to the wafer boat 210, and after the wafers are processed in the furnace tube 100, the wafer loading / unloading machine transfers the processed wafers from the wafer boat 210 to the wafer cassette. The first end of the first exhaust pipe 410 is directly or indirectly connected to the loading / unloading area 200, and the second end of the first exhaust pipe 410 is connected to the vacuum pump 610, which is also connected to the chamber of the furnace tube 100.
[0043] The vacuum pump 610 is configured to operate in two modes, including a first mode and a second mode. In the first mode, the vacuum pump 610 is used to pump gas from inside the furnace tube 100 to control the process pressure. In the second mode, the vacuum pump 610 is used to pump gas from inside the loading / unloading area 200 to control the oxygen concentration inside the loading / unloading area 200.
[0044] Vacuum pump 610 is capable of evacuating the loading / unloading area 200 to a vacuum level of 3 to 5 mTorr. Vacuum pump 610 is also connected to exhaust gas treatment device 630, which draws gas from the loading / unloading area 200 to the exhaust gas treatment device 630 for purification before releasing it into the air. The exhaust gas treatment device 630 may include at least two treatment units, which serve as backups for each other to prevent a single unit failure from affecting gas purification.
[0045] During the process of transferring the wafer to the wafer carrier 210 via the transfer port, oxygen from the wafer cassette flows into the loading / unloading area 200, causing an increase in the oxygen concentration in the loading / unloading area 200. When the wafer carrier 210 is moved into the furnace tube 100 for processing, oxygen flows into the furnace tube 100, affecting the film deposition quality and product yield when the furnace tube 100 is used for thin film deposition. In some wafer processing equipment, the loading / unloading area 200 is connected to the plant exhaust system 620, which can extract gas from the loading / unloading area 200 to reduce the oxygen concentration in the loading / unloading area 200. However, the extraction capacity of the plant exhaust system 620 is insufficient. When the extraction force is 100 Pa and the oxygen extraction time is about 150 minutes, the residual oxygen concentration in the loading / unloading area 200 is high (oxygen concentration m is about 4.5 ppm). Figure 2As shown, the long oxygen extraction time leads to low wafer processing equipment production efficiency, and the high residual oxygen concentration affects film quality and product yield. Even with increased extraction capacity of the plant exhaust system 620, when the extraction force is 800 Pa and the oxygen extraction time is approximately 130 minutes, the residual oxygen concentration in the loading / unloading area 200 is still relatively high (oxygen concentration m is approximately 3 ppm). Figure 3 As shown, it is still impossible to achieve the preset standard for vacuum level in loading and unloading area 200 (e.g., vacuum level millitor level).
[0046] In this embodiment, the wafer processing apparatus includes a furnace tube 100, a loading and unloading area 200, a wafer transfer chamber 300, and a first exhaust pipe 410. The loading and unloading area 200 is located below the furnace tube 100 and is equipped with a wafer boat 210 and a wafer boat loading and unloading machine. The wafer boat loading and unloading machine is used to move the wafer boat 210 into or out of the furnace tube 100. The wafer transfer chamber 300 is connected to the loading and unloading area 200 through a transfer port. The loading and unloading area 200 is also equipped with a wafer loading and unloading machine, which is used to transfer wafers between wafer cassettes in the wafer boat 210 and the wafer transfer chamber 300. The first end of the first exhaust pipe 410 is directly or indirectly connected to the loading and unloading area 200, and the second end of the first exhaust pipe 410 is used to connect to a vacuum pump 610. The vacuum pump 610 is also connected to the chamber of the furnace tube 100. Compared to the plant exhaust system 620, the vacuum pump 610 has a stronger pumping capacity. The vacuum pump 610 can evacuate the loading and unloading area 200 to 3-5 mTorr, and can remove the oxygen concentration in the loading and unloading area 200 to a lower level in a shorter time, which can improve the production efficiency and product yield of the wafer processing equipment.
[0047] In some embodiments, the wafer processing apparatus further includes a second exhaust pipe 420, the first end of which is connected to the loading / unloading area 200, and the second end of which is used to connect to the plant exhaust system 620. The wafer processing apparatus also includes a first intake pipe 510, which is used to introduce purge gas to purge the loading / unloading area 200. The purge gas includes nitrogen and inert gases, etc. Two first intake pipes 510 can be provided, which can serve as backups for each other or be activated simultaneously. The first intake pipe 510 may include a filter 511, a manual on / off valve 512, a pressure regulating valve 513, a mass flow controller 514, and an electrically operated on / off valve 515 connected in sequence. The electrically operated on / off valve 515 is connected to the loading / unloading area 200 via a pipe, and the filter 511 is used to connect to a gas source device. In addition, the first air intake line 510 may also include a barometer 516, which is connected to the pressure regulating valve 513 on the line near the loading and unloading area 200.
[0048] During the process of transferring the wafer to the wafer boat 210 through the transfer port, purge gas and oxygen can be discharged from the loading and unloading area 200 through the first exhaust pipe 410 and the vacuum pump 610, so that the oxygen concentration in the loading and unloading area 200 can be rapidly reduced to below the preset value. After the wafer boat loading and unloading machine moves the wafer boat 210 into the furnace tube 100, purge gas and oxygen can be discharged from the loading and unloading area 200 through the second exhaust pipe 420 and the plant exhaust system 620 to maintain the gas pressure and oxygen concentration in the loading and unloading area 200.
[0049] In some embodiments, the first exhaust pipe 410 is indirectly connected to the loading / unloading area 200 via the second exhaust pipe 420. That is, the first exhaust pipe 410 and the second exhaust pipe 420 may share an exhaust port.
[0050] The first exhaust pipe 410 and the second exhaust pipe 420 share an exhaust port, which can reduce the opening of the loading and unloading area 200, shorten the pipe length, and also allow for low-cost modification of existing wafer processing equipment.
[0051] In some embodiments, the second exhaust pipe 420 includes a connecting pipe 421, an electric switching valve 515, and a second exhaust pipe 422, which are connected sequentially. The end of the connecting pipe 421 away from the electric switching valve 515 is connected to the loading / unloading area 200, and the end of the second exhaust pipe 422 away from the electric switching valve 515 is connected to the plant exhaust system 620. The first exhaust pipe 410 includes a first exhaust pipe 411 and at least one electric switching valve 515 disposed on the first exhaust pipe 411. The first end of the first exhaust pipe 411 is connected to the connecting pipe 421 via a tee connector, and the second end of the first exhaust pipe 411 is connected to the vacuum pump 610.
[0052] Both the first exhaust pipe 410 and the second exhaust pipe 420 are equipped with electric switching valves 515. The second exhaust pipe 420 is connected to the end of the electric switching valve 515 away from the plant exhaust system 620. After the crystal boat loading and unloading machine moves the crystal boat 210 into the furnace tube 100, the electric switching valve 515 of the second exhaust pipe 420 is opened, and the purging gas and oxygen are discharged from the loading and unloading area 200 through the second exhaust pipe 420 and the plant exhaust system 620. The electric switching valve 515 of the first exhaust pipe 410 is closed, which can prevent the operation of the vacuum pump 610 from affecting the exhaust of other pipes connected to the plant exhaust system 620.
[0053] In some embodiments, the second exhaust pipe 420 includes a connecting pipe 421, a two-position three-way solenoid valve, and a second exhaust pipe 422. The two-position three-way solenoid valve includes an inlet end, a first exhaust end, and a second exhaust end. When the two-position three-way solenoid valve is working, one of the first exhaust end and the second exhaust end is connected to the inlet end. The inlet end is connected to the loading and unloading area 200 through the connecting pipe 421, the first exhaust end is connected to the plant exhaust system 620 through the second exhaust pipe 422, and the second exhaust end is connected to the vacuum pump 610 through the first exhaust pipe 411.
[0054] When the two-position three-way solenoid valve is working, one of the first exhaust end and the second exhaust end is connected to the air inlet end. That is, gases such as nitrogen and oxygen in the loading and unloading area 200 are discharged through one of the first exhaust pipe 410 and the second exhaust pipe 420, which can prevent the operation of the vacuum pump 610 from affecting the exhaust of other pipes connected to the plant exhaust system 620.
[0055] In some embodiments, the wafer processing apparatus further includes a controller, with both the first exhaust pipe 410 and the second exhaust pipe 420 connected to the controller. The controller includes a first state and a second state. In the first state, during the process of the wafer being transferred to the wafer boat 210 via the transfer port, the controller controls the electrically controlled valve (i.e., the electric switching valve 515) in the first exhaust pipe 410 to open, allowing the gas in the loading / unloading area 200 to be discharged at least through the vacuum pump 610. In the second state, after the wafer boat unloader moves the wafer boat 210 into the furnace tube 100, the controller controls the electrically controlled valve in the second exhaust pipe 420 to open, allowing the gas in the loading / unloading area 200 to be discharged through the plant exhaust system 620.
[0056] When the wafer processing unit is operating, as the wafers are transferred to the wafer boat 210 through the transfer port, the controller controls the opening of the electrically controlled valve in the first exhaust pipe 410, ensuring that the gas in the loading / unloading area 200 is discharged through the vacuum pump 610 at least once. After the wafer boat 210 is full of wafers and has been vented through the first exhaust pipe 410 and the vacuum pump 610 for a period of time, the controller controls the wafer boat loading / unloading machine to move the wafer boat 210 into the furnace tube 100. The controller then controls the opening of the electrically controlled valve in the second exhaust pipe 420, allowing the gas in the loading / unloading area 200 to be discharged through the plant exhaust system 620. The controller controls the operation of the wafer processing unit based on time, resulting in a simpler structure for the wafer processing unit.
[0057] In some embodiments, the wafer processing apparatus further includes a trigger, which is disposed on the furnace tube 100 or the wafer boat loading / unloading machine. For example, the trigger is disposed at the contact portion between the reaction chamber 110 and the wafer boat loading / unloading machine, or at the contact portion between the wafer boat loading / unloading machine and the reaction chamber 110. When the wafer boat loading / unloading machine moves the wafer boat 210 into the furnace tube 100, the trigger outputs a control signal to the controller, and the controller switches from a first state to a second state, that is, switching from exhaust from the first exhaust pipe 410 and vacuum pump 610 to exhaust from the second exhaust pipe 420 and plant exhaust system 620.
[0058] In addition, the furnace tube 100 may also include a sealing door 120, which is located at the open end of the reaction chamber 110. When the crystal boat loader moves the crystal boat 210 into the furnace tube 100, the sealing door 120 opens and seals the open end of the reaction chamber 110 through the crystal boat loader or the crystal boat sealing mechanism; after the crystal boat loader removes the crystal boat 210 from the furnace tube 100, the sealing door 120 closes to seal the open end of the reaction chamber 110. A trigger may be located at the sealing door 120.
[0059] The wafer processing unit also includes a trigger. After the wafer boat 210 is moved into the furnace tube 100 by the wafer boat loading and unloading machine, the trigger is activated, and the controller immediately switches from the first state to the second state. By setting the trigger on the furnace tube 100 or the wafer boat loading and unloading machine, the linkage control between the movement of the wafer boat 210 into the furnace tube 100 and the switching of the exhaust mode is realized, which shortens the waiting time and can improve the production efficiency of the wafer processing unit.
[0060] In some embodiments, the wafer processing apparatus further includes a third exhaust line 430, which includes a third exhaust pipe 431 and an oxygen concentration detector 432. The oxygen concentration detector 432 is disposed on the third exhaust pipe 431, which connects to the loading / unloading area 200, the wafer transfer chamber 300, and the plant exhaust system 620. The oxygen concentration detector 432 is connected to a controller. When the oxygen concentration detected by the oxygen concentration detector 432 is less than a preset value, the controller switches from a first state to a second state, that is, switching from exhausting through the first exhaust line 410 and vacuum pump 610 to exhausting through the second exhaust line 420 and plant exhaust system 620. A flow meter 521 is also disposed between the oxygen concentration detector 432 and the plant exhaust system 620.
[0061] When the oxygen concentration detector 432 detects that the oxygen concentration is less than the preset value, the wafer loading and unloading machine moves the wafer 210 into the furnace tube 100. The controller immediately switches from the first state to the second state, realizing the linkage control of the wafer 210 moving into the furnace tube 100 and the switching of the exhaust mode, which shortens the waiting time and can improve the production efficiency of the wafer processing unit.
[0062] In some embodiments, the wafer transfer chamber 300 and the second exhaust pipe 420 are connected to opposite sides of the loading and unloading area 200.
[0063] The wafer transfer chamber 300 is connected to the loading and unloading area 200. On the side of the loading and unloading area 200 connected to the wafer transfer chamber 300, exhaust is provided through the wafer transfer chamber 300, the third exhaust pipe 430, and the plant exhaust system 620. On the side of the loading and unloading area 200 away from the wafer transfer chamber 300, exhaust is provided through the second exhaust pipe 420 and the plant exhaust system 620, or through the first exhaust pipe 410 and the vacuum pump 610. By exhausting from both sides, the oxygen concentration in the loading and unloading area 200 can be reduced to a lower level in a shorter time, thereby improving the production efficiency and product yield of the wafer processing equipment.
[0064] In some embodiments, the wafer processing apparatus further includes a fourth exhaust line 440, which includes a fourth exhaust pipe 441. The fourth exhaust pipe 441 is connected to the vacuum pump 610 and the furnace tube 100, and the first exhaust line 410 is connected to the fourth exhaust pipe 441.
[0065] During the process of transferring the wafer to the wafer boat 210 through the transfer port, the electrically operated switch valve 515 on the first exhaust pipe 410 is opened, and the vacuum pump 610 is used to exhaust the gas in the loading and unloading area 200. After the wafer boat loader moves the wafer boat 210 into the furnace tube 100, the electrically operated switch valve 515 on the first exhaust pipe 410 is closed, and the vacuum pump 610 is used to exhaust the gas in the furnace tube 100 to maintain the gas pressure for the process production in the furnace tube 100.
[0066] In some embodiments, the fourth exhaust pipe 440 further includes two electrically operated switching valves 515 disposed on the fourth exhaust pipe 441. The first exhaust pipe 410 is connected to the fourth exhaust pipe 441 via a tee connector located between the two electrically operated switching valves 515.
[0067] During the process of transferring the wafer to the wafer boat 210 through the transfer port, the electrically operated valve 515 on the fourth exhaust pipe 441 near the furnace tube 100 is closed. After the wafer boat loader moves the wafer boat 210 into the furnace tube 100, the electrically operated valve 515 on the first exhaust pipe 410 is closed, and the electrically operated valve 515 on the fourth exhaust pipe 441 near the furnace tube 100 is opened. The vacuum pump 610 is used to exhaust gas from the furnace tube 100 and maintain the gas pressure for the process production in the furnace tube 100.
[0068] The electrically operated switch valve 515 on the fourth exhaust pipe 441 near the vacuum pump 610 is closed when the vacuum pump 610 is maintained or replaced to prevent outside air from flowing into the fourth exhaust pipe 441.
[0069] In some embodiments, the wafer processing apparatus further includes a second air inlet 520, a third air inlet 530, a fourth air inlet 540, and a fifth air inlet 550.
[0070] The second air inlet line 520 is used to introduce purge gas to purge the wafer transfer chamber 300. The second air inlet line 520 may include a filter 511, a manual on / off valve 512, a pressure regulating valve 513, and a flow meter 521 connected in sequence. The filter 511 is used to connect to the air source device, and the flow meter 521 is connected to the wafer transfer chamber 300. The number of flow meters 521 corresponds one-to-one with the number of wafer transfer chambers 300. For example, if there are two wafer transfer chambers 300, there are also two flow meters 521, and the two flow meters 521 are connected to the pressure regulating valve 513 via a tee connector. In addition, the second air inlet line 520 may also include a barometer 516, which is connected to the pipe of the pressure regulating valve 513 near the wafer transfer chamber 300.
[0071] The third inlet line 530 is used to introduce process gas into the furnace tube 100, and the fourth inlet line 540 is used to introduce clean gas, such as fluorine. Both the third inlet line 530 and the fourth inlet line 540 include, in sequence, a first filter 511, a manual on / off valve 512, a second filter 511, a pressure regulating valve 513, a pressure gauge 516, a first electrically operated on / off valve 515, a mass flow controller 514, a second electrically operated on / off valve 515, and a third electrically operated on / off valve 515. The first filter 511 is used to connect to the gas source device, and the third electrically operated on / off valve 515 is connected to the furnace tube 100.
[0072] The fifth inlet pipe 550 is used to introduce purge gas into the furnace tube 100, the third inlet pipe 530, and the fourth inlet pipe 540. The fifth inlet pipe 550 includes, in sequence, a first filter 511, a manual on / off valve 512, a second filter 511, a pressure regulating valve 513, a pressure gauge 516, a first electrically operated on / off valve 515, a mass flow controller 514, a second electrically operated on / off valve 515, and a third electrically operated on / off valve 515. The first filter 511 is used to connect to the gas source device, and the third electrically operated on / off valve 515 is connected to the furnace tube 100. The fifth intake pipe 550 includes a first intake branch 551 and a second intake branch 552. The first end of both the first intake branch 551 and the first end of both the second intake branch 552 are connected between the barometer 516 and the first electrically operated switch valve 515 of the fifth intake pipe 550. The second end of the first intake branch 551 is connected between the first electrically operated switch valve 515 and the mass flow controller 514 of the third intake pipe 530. The second end of the second intake branch 552 is connected between the first electrically operated switch valve 515 and the mass flow controller 514 of the fourth intake pipe 540. Both the first intake branch 551 and the second intake branch 552 include an intake pipe and an electrically operated switch valve 515 mounted on the intake pipe.
[0073] The wafer processing apparatus also includes a first exhaust branch 450 and a second exhaust branch 460. The first end of the first exhaust branch 450 is connected between the mass flow controller 514 and the second electric switching valve 515 of the third intake pipe 530. The first end of the second exhaust branch 460 is connected between the mass flow controller 514 and the second electric switching valve 515 of the fourth intake pipe 540. The second ends of the first exhaust branch 450 and the second ends of the second exhaust branch 460 are both connected between the two electric switching valves 515 of the fourth exhaust pipe 440.
[0074] The terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.
[0075] In this application, unless otherwise expressly specified and limited, the terms "assembly," "connection," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0076] In the description of this specification, references to terms such as "some embodiments," "exemplarily," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. The illustrative expressions of the above terms in this specification do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0077] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application. Therefore, any changes or modifications made in accordance with the claims and description of this application should fall within the scope of this patent application.
Claims
1. A wafer processing apparatus, characterized by comprising: The utility model relates to a wafer processing device, comprising: a furnace tube for providing a chamber for processing wafers; a loading and unloading area located below the furnace tube, the loading and unloading area being provided with a wafer boat for loading wafers and a wafer boat loading and unloading machine for moving the wafer boat into or out of the furnace tube; a wafer transfer chamber in communication with the loading and unloading area through a transfer port, the loading and unloading area being further provided with a wafer loading and unloading machine for transferring wafers between the wafer boat and a wafer cassette in the wafer transfer chamber; a first exhaust line, a first end of the first exhaust line being directly or indirectly connected to the loading and unloading area, a second end of the first exhaust line being connected to a vacuum pump, the vacuum pump being further connected to the chamber of the furnace tube; a use state of the vacuum pump being configured to include a first mode and a second mode: when the use state of the vacuum pump is in the first mode, the vacuum pump is used to pump the gas inside the chamber of the furnace tube to achieve control of the process pressure; when the use state of the vacuum pump is in the second mode, the vacuum pump is used to pump the gas inside the loading and unloading area to achieve control of the oxygen concentration inside the loading and unloading area; a second exhaust line, a first end of the second exhaust line being connected to the loading and unloading area, a second end of the second exhaust line being used to connect to a plant exhaust system.
2. The wafer processing apparatus of claim 1, wherein The first exhaust line is indirectly connected to the loading and unloading area through the second exhaust line.
3. The wafer processing apparatus of claim 2, wherein The second exhaust line comprises a connecting pipe, an electrically controlled on-off valve and a second exhaust pipe, the connecting pipe, the electrically controlled on-off valve and the second exhaust pipe being connected in sequence, one end of the connecting pipe away from the electrically controlled on-off valve being connected to the loading and unloading area, one end of the second exhaust pipe away from the electrically controlled on-off valve being connected to the plant exhaust system, the first exhaust line comprising a first exhaust pipe and at least one electrically controlled on-off valve provided on the first exhaust pipe, a first end of the first exhaust pipe being connected to the connecting pipe through a tee joint, a second end of the first exhaust pipe being connected to the vacuum pump.
4. The wafer processing apparatus of claim 2, wherein The second exhaust line comprises a connecting pipe, a two-position three-way solenoid valve and a second exhaust pipe, the two-position three-way solenoid valve comprising a gas inlet end, a first gas outlet end and a second gas outlet end, the gas inlet end being connected to the loading and unloading area through the connecting pipe, the first gas outlet end being connected to the plant exhaust system through the second exhaust pipe, the first exhaust line at least comprising a first exhaust pipe, the second gas outlet end being connected to the vacuum pump through the first exhaust pipe.
5. The wafer processing apparatus of claim 2, wherein The wafer processing device further comprises a controller, the first exhaust line and the second exhaust line both being connected to the controller, the controller comprising a first state and a second state, in the first state, the controller controls the electrically controlled valve in the first exhaust line to be opened, so that the gas in the loading and unloading area is discharged at least through the vacuum pump; in the second state, the controller controls the electrically controlled valve in the second exhaust line to be opened, so that the gas in the loading and unloading area is discharged through the plant exhaust system.
6. The wafer processing apparatus of claim 5, wherein The wafer processing device further comprises a trigger provided on the furnace tube or the boat handler, the trigger outputs a control signal to the controller when the boat handler moves the boat into the furnace tube, and the controller switches from the first state to the second state.
7. The wafer processing apparatus of claim 5, wherein The wafer processing device further comprises a third exhaust pipeline, the third exhaust pipeline comprises a third exhaust pipe and an oxygen concentration detector, the oxygen concentration detector is provided on the third exhaust pipe, the third exhaust pipe is connected with the loading and unloading area, the wafer transfer chamber and the factory exhaust system, the oxygen concentration detector is connected with the controller, and the controller switches from the first state to the second state when the oxygen concentration detected by the oxygen concentration detector is less than a preset value.
8. The wafer processing apparatus of claim 7, wherein, The wafer transfer chamber and the second exhaust pipeline are connected with opposite sides of the loading and unloading area.
9. The wafer processing apparatus of claim 1, wherein, The wafer processing device further comprises a fourth exhaust pipeline, the fourth exhaust pipeline comprises a fourth exhaust pipe, the fourth exhaust pipe is connected with the vacuum pump and the furnace tube, and the first exhaust pipeline is connected with the fourth exhaust pipe.
10. The wafer processing apparatus of claim 9, wherein, The fourth exhaust pipeline further comprises two electrically operated on-off valves, the electrically operated on-off valves are provided on the fourth exhaust pipe, the first exhaust pipeline is connected with the fourth exhaust pipe through a tee joint, and the tee joint is located between the two electrically operated on-off valves.