Aluminum nitride growth device

Abstract

The utility model provides an aluminum nitride growing device. The aluminum nitride growing device comprises a crucible, a raw material crucible assembly arranged in the middle of the crucible, and a first fixing structure and a second fixing structure which are respectively arranged on the upper side and the lower side of the raw material crucible assembly along the longitudinal direction, wherein the raw material crucible assembly divides an inner cavity of the crucible into a first sublimation area and a second sublimation area which are arranged in the longitudinal direction and are communicated with each other; the raw material crucible assembly comprises a raw material crucible used for containing an aluminum nitride raw material. The first fixing structure is used for fixing the first seed crystal and exposing the growth surface of the first seed crystal to the first sublimation area; the second fixing structure is used for fixing the second seed crystal and exposing the growth surface of the second seed crystal to the second sublimation area; according to the aluminum nitride growing device disclosed by the utility model, two aluminum nitride crystal ingots can simultaneously grow in a single furnace, so that the production efficiency is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to crystal growth technical field especially relates to a kind of aluminium nitride growth device. BACKGROUND

[0002] Aluminum nitride (AlN) becomes the new generation of ultra-wide bandgap semiconductor with great potential, key strategic new material due to its excellent performance. Physical vapor transport process (PVT) is the leading method for growing high-quality bulk AlN crystals. However, the traditional physical vapor transport method can only grow one aluminum nitride crystal ingot per furnace cycle, with low production efficiency.

[0003] It should be noted that the above introduction to the background art is only to facilitate a clear and complete description of the technical solutions of the utility model, and to facilitate the understanding of those skilled in the art. The above technical solutions cannot be considered as known to those skilled in the art just because they are described in the background art section of the utility model. SUMMARY

[0004] The utility model aims at disclosing a kind of aluminium nitride growth device, to solve the many defects of the device for preparing crystal ingot in prior art by physical vapor transport method, especially to realize the simultaneous growth of two aluminum nitride crystal ingots per furnace cycle, improve production efficiency.

[0005] To achieve the above object, the utility model provides a kind of aluminium nitride growth device, comprising: crucible, setting in the raw material crucible assembly of middle part of the crucible and the first fixed structure and second fixed structure being respectively configured in the raw material crucible assembly upper and lower two sides along longitudinal direction;

[0006] Wherein, the raw material crucible assembly separates the inner cavity of the crucible into first sublimation zone and second sublimation zone arranged along longitudinal direction and interconnected;

[0007] The raw material crucible assembly includes raw material crucible, and the raw material crucible is used to hold aluminum nitride raw material.

[0008] The first fixed structure is used to fix the first seed crystal and expose the growth surface of the first seed crystal to the first sublimation zone;The second fixed structure is used to fix the second seed crystal and expose the growth surface of the second seed crystal to the second sublimation zone.

[0009] As a further improvement of the utility model, the material of the crucible is pure tungsten.

[0010] As a further improvement of the utility model, the first fixed structure is internally structured with a first guide structure for guiding the gas phase substance produced by sublimation of the aluminum nitride raw material in the raw material crucible to the growth surface of the first seed crystal in the first sublimation zone.

[0011] The second fixed structure is internally structured with a second guide structure for guiding the gas phase substance produced by sublimation of the aluminum nitride raw material in the raw material crucible to the growth surface of the second seed crystal in the second sublimation zone.

[0012] As a further improvement of the utility model, the aluminum nitride growth device further comprises: a first flow guide cover longitudinally arranged between the raw material crucible and the first fixed structure, and a second flow guide cover longitudinally arranged between the raw material crucible and the second fixed structure.

[0013] The first flow guide cover is used for guiding the gas phase substance produced by sublimation of the aluminum nitride raw material in the raw material crucible to the growth surface of the first seed crystal in the first sublimation zone, and the second flow guide cover is used for guiding the gas phase substance produced by sublimation of the aluminum nitride raw material in the raw material crucible to the growth surface of the second seed crystal in the second sublimation zone.

[0014] As a further improvement of the utility model, the first fixed structure is internally structured with a first guide structure for guiding the gas phase substance produced by sublimation of the aluminum nitride raw material in the raw material crucible to the growth surface of the first seed crystal in the first sublimation zone; the aluminum nitride growth device further comprises: a second flow guide cover longitudinally arranged between the raw material crucible and the second fixed structure, and the second flow guide cover is used for guiding the gas phase substance produced by sublimation of the aluminum nitride raw material in the raw material crucible to the growth surface of the second seed crystal in the second sublimation zone.

[0015] Alternatively, the aluminum nitride growth device further comprises: a first flow guide cover longitudinally arranged between the raw material crucible and the first fixed structure, and the first flow guide cover is used for guiding the gas phase substance produced by sublimation of the aluminum nitride raw material in the raw material crucible to the growth surface of the first seed crystal in the first sublimation zone; the second fixed structure is internally structured with a second guide structure for guiding the gas phase substance produced by sublimation of the aluminum nitride raw material in the raw material crucible to the growth surface of the second seed crystal in the second sublimation zone.

[0016] As a further improvement of the utility model, the middle part of the first fixed structure is structured with a first clamping groove for supporting the first seed crystal, and the inner diameter of the first guide structure decreases from the bottom of the first fixed structure to one side of the first clamping groove.

[0017] The middle part of the second fixing structure is configured with a second clamping groove for supporting the second seed crystal.

[0018] As a further improvement of the utility model, the inner diameter of the first flow guide cover decreases from the raw material crucible to one side of the first fixing structure, and a plurality of first through holes are formed on the side of the first flow guide cover close to the growth surface of the first seed crystal.

[0019] The inner diameter of the second flow guide cover decreases from the raw material crucible to one side of the second fixing structure, and a plurality of second through holes are formed on the side of the second flow guide cover close to the growth surface of the second seed crystal.

[0020] As a further improvement of the utility model, the crucible comprises a crucible bottom, a crucible cover and a crucible barrel with openings at both ends and adjustable height, the bottom of the crucible barrel is installed on the crucible bottom, and the crucible cover is installed on the top opening of the crucible barrel.

[0021] The aluminum nitride growth device further comprises a first sleeve and a second sleeve which are continuously arranged along the longitudinal direction and are attached to the inner wall of the crucible; the first sleeve extends to the installation gap between the crucible cover and the crucible barrel along the longitudinal direction, and the second sleeve extends to the installation gap between the crucible barrel and the crucible bottom along the longitudinal direction.

[0022] As a further improvement of the utility model, the raw material crucible assembly further comprises a support portion which is outwardly protruded along the circumferential direction and extends between the first sleeve and the second sleeve, and the first sleeve and the second sleeve abut against the outer periphery of the support portion along the longitudinal direction.

[0023] The first sleeve extends along the longitudinal direction and abuts against the first fixing structure in cooperation with the crucible cover, and the second sleeve extends along the longitudinal direction and abuts against the second fixing structure in cooperation with the crucible bottom.

[0024] As a further improvement of the utility model, the support portion is configured with a plurality of fifth through holes, and the first sublimation zone and the second sublimation zone are communicated through the fifth through holes.

[0025] As a further improvement of the utility model, a plurality of third through holes are formed on one side of the raw material crucible in the first sublimation zone, and a plurality of fourth through holes are formed on the side wall of the raw material crucible in the second sublimation zone.

[0026] Compared with the prior art, the utility model has the beneficial effects that:

[0027] The growth device provided by the utility model discloses a crucible, a raw material pot assembly arranged in the middle part of the crucible and a first fixing structure and a second fixing structure arranged on the upper and lower sides of the raw material pot assembly along the longitudinal direction; the raw material pot assembly divides the inner cavity of the crucible into a first sublimation area and a second sublimation area arranged along the longitudinal direction and communicated with each other; the raw material pot assembly comprises a raw material pot, and the raw material pot is used for containing aluminum nitride raw materials; the first fixing structure is used for fixing a first seed crystal, and the growth surface of the first seed crystal is exposed to the first sublimation area; the second fixing structure is used for fixing a second seed crystal, and the growth surface of the second seed crystal is exposed to the second sublimation area. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 The whole schematic view of the aluminum nitride growth device disclosed by the utility model, wherein the first fixing structure is internally structured as a first guide structure, and the second fixing structure is internally structured as a second guide structure;

[0029] Figure 2 The whole schematic view of the aluminum nitride growth device in another embodiment, wherein the first fixing structure is internally structured as a first guide structure, and a second flow deflector is arranged between the raw material pot and the second fixing structure;

[0030] Figure 3 The whole schematic view of the aluminum nitride growth device in another embodiment, wherein a first flow deflector is arranged between the raw material pot and the first fixing structure, and the second fixing structure is internally structured as a second guide structure;

[0031] Figure 4 The whole schematic view of the aluminum nitride growth device in another embodiment, wherein a first flow deflector is arranged between the raw material pot and the first fixing structure, and a second flow deflector is arranged between the raw material pot and the second fixing structure;

[0032] Figure 5 The partial schematic view of the aluminum nitride growth device disclosed by the utility model, wherein a second flow deflector is arranged between the raw material pot and the second fixing structure. DETAILED DESCRIPTION

[0033] The utility model will be explained in detail in combination with each embodiment shown in the drawings, but it should be explained that these embodiments are not the limitation of the utility model, and the equivalent transformation or replacement of function, method or structure made by the ordinary skill in the art according to these embodiments all belong to the protection scope of the utility model.

[0034] The attached drawings in this invention are not strictly drawn to actual scale, and the specific dimensions of each structure can be determined according to actual needs. The attached drawings described in this invention are only schematic diagrams of the structures.

[0035] Refer Figure 1 as shown Figure 1 is an overall schematic diagram of the aluminum nitride growth device disclosed by the present utility model. In this embodiment, the aluminum nitride growth device 100 includes: a crucible 10, a raw material crucible assembly (not labeled) disposed in the middle of the crucible 10, and a first fixing structure 31 and a second fixing structure 32 respectively arranged on the upper and lower sides of the raw material crucible assembly along the longitudinal direction (i.e., Figure 1 the direction shown by the X-axis in the figure).

[0036] The crucible 10 is made of pure tungsten. The raw material crucible assembly divides the inner cavity of the crucible 10 into a first sublimation zone 101 and a second sublimation zone 102 which are arranged longitudinally and communicate with each other; the raw material crucible assembly includes a raw material crucible 20 for containing aluminum nitride raw materials. The first fixing structure 31 is used to fix the first seed crystal 201 and expose the growth surface of the first seed crystal 201 to the first sublimation zone 101, and the second fixing structure 32 is used to fix the second seed crystal 202 and expose the growth surface of the second seed crystal 202 to the second sublimation zone 102.

[0037] By accommodating high-purity aluminum nitride raw materials in the raw material crucible 20, at a high temperature (2000 - 2300 °C) environment, the aluminum nitride raw materials undergo a sublimation reaction to generate gaseous substances (i.e., Al vapor and N2 gas). The gaseous substances diffuse from the raw material crucible 20 to the first sublimation zone 101 and the second sublimation zone 102 simultaneously. Since the first sublimation zone 101 and the second sublimation zone 102 are respectively provided with the first seed crystal 201 and the second seed crystal 202, the gaseous substances can be respectively transmitted to the first seed crystal 201 and the second seed crystal 202. Thus, the gaseous substances are deposited on the growth surfaces of the first seed crystal 201 and the second seed crystal 202, and crystal growth is achieved through homoepitaxy, thereby realizing the synchronous growth of two aluminum nitride ingots in a single furnace batch.

[0038] The aluminum nitride growth apparatus 100 disclosed in this invention provides a sealed growth environment for the first seed crystal 201 and the second seed crystal 202 through a crucible 10 to maintain the high temperature and high pressure conditions required for physical vapor transport. By positioning the raw material crucible 20 in the center of the crucible 10, the distance between the first seed crystal 201 and the second seed crystal 202 and the raw material crucible 200 is equal, allowing the gaseous material to diffuse uniformly upwards and downwards, simultaneously supplying the growth of the first seed crystal 201 and the second seed crystal 202, thus ensuring the consistency of the growth rate and quality of the first seed crystal 201 and the second seed crystal 202. Furthermore, the bidirectional diffusion of the gaseous material improves the utilization rate of the aluminum nitride raw material. The edges of the first seed crystal 201 and the second seed crystal 202 are fixed by the first fixing structure 31 and the second fixing structure 32, respectively, to prevent the first seed crystal 201 and the second seed crystal 202 from loosening or shifting at high temperatures. This ensures that the growth surfaces of the first seed crystal 201 and the second seed crystal 202 are fully exposed to the corresponding first sublimation region 101 and second sublimation region 102, allowing the gaseous material to uniformly cover the growth surfaces of the first seed crystal 201 and the second seed crystal 202, ensuring smooth crystal growth. The first sublimation region 101 and the second sublimation region 102 are interconnected, allowing the pressure of the gaseous material in the first sublimation region 101 and the second sublimation region 102 to automatically balance, preventing gaseous material from flowing outwards due to pressure differences.

[0039] The aluminum nitride growth device disclosed in this utility model can grow two aluminum nitride ingots simultaneously in a single furnace. The two aluminum nitride ingots share the same thermal field, making full use of gaseous materials and sharing energy consumption. Compared with traditional ingot growth devices, it improves production efficiency and reduces energy consumption.

[0040] It should be noted that in the aluminum nitride growth apparatus 100 disclosed in this utility model, two independent aluminum nitride crystal ingots are grown simultaneously and complete single crystal epitaxy in their respective growth spaces. There is no lattice continuity between the two aluminum nitride crystal ingots, and each meets the single crystal quality standard.

[0041] In some examples, the parameter Figure 1 As shown, the first fixing structure 31 is internally configured with a first guiding structure 311 for guiding the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible 20 to the growth surface of the first seed crystal 201 in the first sublimation region 101; the second fixing structure 32 is internally configured with a second guiding structure 321 for guiding the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible 20 to the growth surface of the second seed crystal 202 in the second sublimation region 102.

[0042] Under high temperature conditions, gaseous substances diffuse simultaneously from the raw material crucible 20 to the first sublimation zone 101 and the second sublimation zone 102. The first guiding structure 311 guides the gaseous substances in the first sublimation zone 101 to converge and flow along... Figure 1The material is transported to the growth surface of the first seed crystal 201 in the direction indicated by the middle arrow A11, and the gaseous material in the second sublimation region 102 is guided to converge and flow along the second guiding structure 321. Figure 1 The gaseous material is transported to the growth surface of the second seed crystal 202 in the direction indicated by the middle arrow A21, so that the gaseous material can uniformly cover the growth surfaces of the first seed crystal 201 and the second seed crystal 202, avoiding local growth that is too fast or too slow on the growth surfaces of the first seed crystal 201 and the second seed crystal 202, and ensuring that the growth rates of the first seed crystal 201 and the second seed crystal 202 are basically the same, thus ensuring the quality and efficiency of the synchronous growth of the two crystals.

[0043] In some examples, the first fixing structure 31 and the second fixing structure 32 are configured as hollow cylindrical structures to allow gaseous material to be transported along the interior of the cylindrical structure to the growth surfaces of the first seed crystal 201 and the second seed crystal 202. A first slot 312 for supporting the first seed crystal 201 is constructed in the middle of the first fixing structure 31, and a second slot 322 for supporting the second seed crystal 202 is constructed in the middle of the second fixing structure 32. The first slot 312 and the second slot 322 respectively fix the first seed crystal 201 and the second seed crystal 202, ensuring that the first seed crystal 201 and the second seed crystal 202 maintain stable positioning under high-temperature conditions and preventing positional displacement of the first seed crystal 201 and the second seed crystal 202 during the growth process.

[0044] In other examples, the parameter Figure 2 As shown, the first fixed structure 31 is internally configured with a first guide structure 311 for guiding the gaseous material generated by the sublimation of aluminum nitride material in the raw material crucible 20 to the growth surface of the first seed crystal 201 in the first sublimation zone 101; the aluminum nitride growth apparatus 100 further includes a second flow guide hood 52 disposed longitudinally between the raw material crucible 20 and the second fixed structure 32, the second flow guide hood 52 being used to guide the gaseous material generated by the sublimation of aluminum nitride material in the raw material crucible 20 to the growth surface of the second seed crystal 202 in the second sublimation zone 102.

[0045] The second guide shroud 52 is disposed in the second sublimation zone 102 and together with the raw material crucible 20 forms the second guiding region 522. Under high-temperature conditions, gaseous substances diffuse simultaneously from the raw material crucible 20 to the first sublimation zone 101 and the second guiding region 522. The first guiding structure 311 guides the gaseous substances in the first sublimation zone 101 to converge and flow along... Figure 2 The gaseous material is transported to the growth surface of the first seed crystal 201 in the direction indicated by the middle arrow A11, and guided by the second guide hood 52 along the second guide region 522. Figure 2The gaseous material diffuses towards the second sublimation region 102 in the direction indicated by the middle arrow A21, while simultaneously transporting the gaseous material to the growth surface of the second seed crystal 202, so that the gaseous material uniformly covers the growth surfaces of the first seed crystal 201 and the second seed crystal 202. Because the space of the second guiding region 522 is more compact, the movement path of the gaseous material within the second guiding region 522 to the growth surface of the second seed crystal 202 is shorter, thereby reducing diffusion loss or scattering caused by collisions during transport and suppressing the evaporation rate of the gaseous material.

[0046] In some other examples, the parameter Figure 3 As shown, the aluminum nitride growth apparatus 100 further includes: a first flow guide shroud 51 longitudinally disposed between the raw material crucible 20 and the first fixed structure 31, the first flow guide shroud 51 being used to guide the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible 20 to the growth surface of the first seed crystal 201 in the first sublimation zone 101; and a second guide structure 321 is constructed inside the second fixed structure 32 to guide the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible 20 to the growth surface of the second seed crystal 202 in the second sublimation zone 102.

[0047] A first guide shroud 51 is disposed in the first sublimation zone 101 and together with the raw material crucible 20, forms a first guiding region 512. Under high-temperature conditions, gaseous substances diffuse simultaneously from the raw material crucible 20 to the first guiding region 512 and the second sublimation zone 102. The first guide shroud 51 guides the gaseous substances within the first guiding region 512 along... Figure 3 The gaseous material diffuses towards the first sublimation region 101 in the direction indicated by the middle arrow A11, while simultaneously transporting the gaseous material to the growth surface of the first seed crystal 201. The second guiding structure 321 guides the gaseous material within the second sublimation region 102 to converge and flow along... Figure 3 The gaseous material is transported to the growth surface of the second seed crystal 202 in the direction indicated by the middle arrow A21, so that the gaseous material uniformly covers the growth surfaces of the first seed crystal 201 and the second seed crystal 202. Because the space of the first guiding region 512 is more compact, the movement path of the gaseous material within the first guiding region 512 to the growth surface of the first seed crystal 201 is shorter, thereby reducing diffusion loss or scattering caused by collisions during transport and suppressing the evaporation rate of the gaseous material.

[0048] In some examples, the parameter Figures 1 to 3 As shown, the inner diameter of the first guide structure 311 decreases from the bottom of the first fixing structure 31 toward one side of the first slot 312; the inner diameter of the second guide structure 321 decreases from the bottom of the second fixing structure 32 toward one side of the second slot 322.

[0049] The tapered inner diameters of the first guide structure 311 and the second guide structure 321 facilitate the convergence of gaseous substances diffused into the first sublimation region 101 towards the first guide structure 311, allowing the gaseous substances to concentrate and uniformly flow along... Figure 1 and Figure 2 The gaseous material, transported to the growth surface of the first seed crystal 201 in the direction indicated by the middle arrow A11, diffuses into the second sublimation region 102 and converges towards the second guiding structure 321, allowing the gaseous material to concentrate and uniformly flow along the growth surface. Figure 1 and Figure 3 The gaseous material is transported to the growth surface of the second seed crystal 202 in the direction indicated by the middle arrow A21, so that the gaseous material supply in each region of the growth surface of the first seed crystal 201 and the second seed crystal 202 is consistent, avoiding local growth rate differences caused by uneven distribution of gaseous material, and preventing defects such as step accumulation and microcracks.

[0050] In other examples, the parameter Figure 4 As shown, the aluminum nitride growth apparatus 100 further includes: a first flow guide hood 51 disposed longitudinally between the raw material crucible 20 and the first fixed structure 31, and a second flow guide hood 52 disposed longitudinally between the raw material crucible 20 and the second fixed structure 32; the first flow guide hood 51 is used to guide the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible 20 to the growth surface of the first seed crystal 201 in the first sublimation zone 101, and the second flow guide hood 52 is used to guide the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible 20 to the growth surface of the second seed crystal 202 in the second sublimation zone 102.

[0051] A first guide shroud 51 is disposed in the first sublimation zone 101 and together with the raw material crucible 20 forms a first guiding region 512. A second guide shroud 52 is disposed in the second sublimation zone 102 and together with the raw material crucible 20 forms a second guiding region 522. Under high temperature conditions, gaseous substances diffuse from the raw material crucible 20 simultaneously into the first guiding region 512 and the second guiding region 522. The first guide shroud 51 guides the gaseous substances in the first guiding region 512 along... Figure 4 The gaseous material diffuses towards the first sublimation region 101 in the direction indicated by the middle arrow A11, while simultaneously transporting the gaseous material to the growth surface of the first seed crystal 201. The gaseous material within the second guiding region 522 is guided by the second guide hood 52 along... Figure 4The gaseous material diffuses towards the second sublimation region 102 in the direction indicated by the central arrow A21, simultaneously transporting the gaseous material to the growth surface of the second seed crystal 202. This ensures that the gaseous material uniformly covers the growth surfaces of the first seed crystal 201 and the second seed crystal 202, preventing excessively rapid or slow local growth on these surfaces. It also ensures that the growth rates of the first seed crystal 201 and the second seed crystal 202 are essentially the same, guaranteeing the quality and efficiency of simultaneous dual-crystal growth. Furthermore, it ensures consistent gaseous material supply across all regions of the growth surfaces of the first seed crystal 201 and the second seed crystal 202, avoiding localized growth rate differences caused by uneven gaseous material distribution and preventing defects such as step accumulation and microcracks. Because the spaces of the first guiding region 512 and the second guiding region 522 are more compact, the movement paths of the gaseous material from the first guiding region 512 and the second guiding region 522 to the growth surfaces of the first seed crystal 201 and the second seed crystal 202 are shorter, thereby reducing diffusion loss or scattering caused by collisions during transport and suppressing the evaporation rate of the gaseous material.

[0052] In some examples, the parameter Figures 2 to 4 As shown, the inner diameter of the first flow guide shroud 51 decreases from the raw material crucible 20 towards the first fixed structure 31. Multiple first through holes 511 are formed on the side of the first flow guide shroud 51 near the growth surface of the first seed crystal 201. The inner diameter of the second flow guide shroud 52 decreases from the raw material crucible 20 towards the second fixed structure 32. Multiple second through holes 521 are formed on the side of the second flow guide shroud 52 near the growth surface of the second seed crystal 202. The first flow guide shroud 51 and the first seed crystal 201 are longitudinally spaced by a certain distance, and the first through holes 511 correspond longitudinally to the growth surface of the first seed crystal 201. The second flow guide shroud 52 and the second seed crystal 202 are longitudinally spaced by a certain distance, and the second through holes 521 correspond longitudinally to the growth surface of the second seed crystal 202.

[0053] The tapered inner diameter of the first guide shroud 51 facilitates the convergence of gaseous material diffused into the first guiding region 512 towards the side of the first guide shroud 51 closest to the growth surface of the first seed crystal 201. The first through-hole 511 aligns longitudinally with the growth surface of the first seed crystal 201, allowing the gaseous material in the first guiding region 512 to pass through the first through-hole 511 in a concentrated and uniform manner. Figure 3 and Figure 4 The gaseous material is transported to the growth surface of the first seed crystal 201 in the direction indicated by the middle arrow A11, and diffuses into the first sublimation region 101 at the same time. During the process of the gaseous material being transported to the growth surface of the first seed crystal 201 through the first through hole 511, the gaseous material is more easily constrained in the direction pointing to the growth surface of the first seed crystal 201, reducing lateral dispersion, improving the effective transport rate, and making the gaseous material deposit more uniformly on the growth surface of the first seed crystal 201.

[0054] The tapered inner diameter of the second guide shroud 52 facilitates the convergence of gaseous material diffused into the second guide region 522 towards the side of the second guide shroud 52 closest to the growth surface of the second seed crystal 202. The second through-hole 521 aligns longitudinally with the growth surface of the second seed crystal 202, allowing the gaseous material in the second guide region 522 to pass through the second through-hole 521 in a concentrated and uniform manner. Figure 2 and Figure 4 The gaseous material is transported to the growth surface of the second seed crystal 202 in the direction indicated by the middle arrow A21, and simultaneously diffuses into the second sublimation region 102. During the process of the gaseous material being transported to the growth surface of the second seed crystal 202 through the second through hole 521, the gaseous material is more easily constrained in the direction pointing towards the growth surface of the second seed crystal 202, reducing lateral dispersion, improving the effective transport rate, and making the gaseous material more uniformly deposited on the growth surface of the second seed crystal 202.

[0055] In some examples, the parameter Figures 1 to 4 As shown, the crucible 10 includes a crucible bottom 11, a crucible lid 12, and a crucible cylinder 13 with openings at both ends and adjustable height. The bottom of the crucible cylinder 13 is installed on the crucible bottom 11, and the crucible lid 12 is installed at the top opening of the crucible cylinder 13. The aluminum nitride growth apparatus 100 also includes a first sleeve 41 and a second sleeve 42, which are continuously arranged longitudinally and fitted to the inner wall of the crucible 10. The first sleeve 41 extends longitudinally to the installation gap between the crucible lid 12 and the crucible cylinder 13, and the second sleeve 42 extends longitudinally to the installation gap between the crucible cylinder 13 and the crucible bottom 11. By adjusting the height of the crucible cylinder 13, the internal volume of the crucible 10 can be adjusted, thereby flexibly adapting to raw material crucibles 20 with different raw material loading amounts. The first sleeve 41 covers the installation gap between the crucible cover 12 and the crucible cylinder 13, and the second sleeve 42 covers the installation gap between the crucible cylinder 13 and the crucible bottom 11, so as to enhance the sealing of the crucible 10, prevent gaseous substances from leaking, reduce the contamination of the furnace (not shown) outside the crucible 10 by gaseous substances, reduce the heat loss inside the crucible 10, and ensure that the heat is evenly distributed throughout the entire interior of the crucible 10.

[0056] In some examples, the parameter Figures 1 to 4 As shown, the raw material crucible assembly also includes a support portion 23 that extends outward in the circumferential direction to the space between the first sleeve 41 and the second sleeve 42. The first sleeve 41 and the second sleeve 42 abut against the outer periphery of the support portion 23 in the longitudinal direction. The first sleeve 41 extends in the longitudinal direction and cooperates with the crucible cover 12 to abut against the first fixing structure 31. The second sleeve 42 extends in the longitudinal direction and cooperates with the crucible bottom 11 to abut against the second fixing structure 32.

[0057] The first sleeve 41 and the second sleeve 42 longitudinally abut against the outer periphery of the support portion 23 to fix the position of the raw material crucible 20 within the crucible 10, preventing the raw material crucible 20 from shifting due to gravity or thermal stress and ensuring the stability of the raw material crucible 20 in a high-temperature environment. The first sleeve 41 and the crucible cover 12 jointly abut against the first fixing structure 31, and the second sleeve 42 and the crucible bottom 11 jointly abut against the second fixing structure 32, to stabilize the positions of the first seed crystal 201 and the second seed crystal 202, ensuring their stability in a high-temperature environment. The support portion 23 is constructed with several fifth through holes 231, through which the first sublimation zone 101 and the second sublimation zone 102 are connected, allowing the pressure of the gaseous substances in the first sublimation zone 101 and the second sublimation zone 102 to automatically balance, preventing gaseous substances from flowing outwards due to pressure differences.

[0058] In some examples, the parameter Figures 1 to 4 As shown, the raw material crucible 20 consists of a lower crucible body 22 and an upper crucible body 21. The upper crucible body 21 covers the lower crucible body 22, and a support part 23 is formed on the lower crucible body 22. The raw material crucible 20 adopts a split structure, and the upper crucible body 21 can be detachably covered to cover the lower crucible body 22, which facilitates raw material loading and cleaning maintenance. Furthermore, the split joint surface between the upper crucible body 21 and the lower crucible body 22 adopts a stepped sealing structure to reduce heat loss.

[0059] In some examples, the parameter Figures 1 to 4 As shown, a plurality of third through holes 211 are formed on one side of the first sublimation zone 101 in the raw material crucible 20; a plurality of fourth through holes 221 are formed on one side of the peripheral wall of the raw material crucible 20 in the second sublimation zone 102, and the fourth through holes 221 are close to the bottom of the raw material crucible 20. Under high temperature conditions, the aluminum nitride raw material in the raw material crucible 20 undergoes a sublimation reaction, and the gaseous substance passes through the third through holes 211 along... Figure 1 The water flows in the direction indicated by the middle arrow A1 to the first sublimation zone 101, and through the fourth through-hole 221 along... Figure 1 The gaseous material flows to the second sublimation zone 102 in the direction indicated by the middle arrow A2. Multiple third through holes 211 are formed on the top and / or peripheral wall of the upper crucible 21; this invention does not limit this. A fourth through hole 221 is formed on the peripheral wall of the lower crucible 22, allowing the gaseous material to flow through the fourth through hole 221 along... Figure 1 The material diffuses laterally in the direction indicated by the middle arrow A2 to the second sublimation zone 102 to prevent aluminum nitride material from falling onto the second seed crystal 202 and to avoid contaminating the growth surface of the second seed crystal 202.

[0060] In some examples, the parameter Figure 5 As shown, Figure 5This is a partial schematic diagram of the aluminum nitride growth apparatus 100 disclosed in this utility model, wherein a second flow guide shroud 52 is arranged longitudinally between the raw material crucible 20 and the second fixed structure 32. Exemplarily, the diameter of the raw material crucible 20 is L1≈80mm, the inner diameter of the crucible 10 is L2≈150mm, the diameter of the second seed crystal 202 is L3, which is 50mm to 100mm, the vertical distance between the top of the second flow guide shroud 52 and the bottom of the support portion 23 is H1≈38.65mm, the vertical distance between the bottom of the second flow guide shroud 52 and the growth surface of the second seed crystal 202 is H2≈50mm, and the height of the second flow guide shroud 52 is H3≈56.5mm.

[0061] The peripheral wall 520 of the second guide shroud 52 forms an angle α with the horizontal plane, preferably 60°. In the low-pressure environment inside the crucible 10, the mean free path of gas molecules is longer, and their trajectories are closer to straight lines, resulting in a lower collision frequency. By using a 60° tilt angle, the gaseous material in the second guide region 522 can more easily move along the tilt direction of the peripheral wall 520, reducing the number of collisions between gas molecules and the inner wall surface of the peripheral wall 520, and increasing the probability that gas molecules directly reach the growth surface of the second seed crystal 202. Furthermore, this 60° tilt angle can effectively suppress the generation of eddies or turbulence, maintain a stable laminar flow state, and ensure the orderly and efficient directional flow of the gaseous material.

[0062] In some examples, the first flow guide shroud 51 is similar to the second flow guide shroud 52, and the angle formed between its peripheral wall and the horizontal plane is also preferably 60°. Since the structure, function, and technical effects of the first flow guide shroud 51 and the second flow guide shroud 52 are completely symmetrical and equivalent, their specific implementations can be referred to the description of the second flow guide shroud 52 described above, and will not be repeated here. Through the synergistic effect of the first flow guide shroud 51 and the second flow guide shroud 52, they jointly adapt to the gas phase transport characteristics of the low-pressure environment inside the crucible 10. Through flow field optimization and laminar flow control, the high efficiency and consistent quality of the growth of the first seed crystal 201 and the second seed crystal 202 are achieved.

[0063] In summary, the growth apparatus provided by this utility model includes: a crucible, a raw material crucible assembly disposed in the middle of the crucible, and a first fixing structure and a second fixing structure respectively disposed on the upper and lower sides of the raw material crucible assembly along the longitudinal direction; the raw material crucible assembly divides the inner cavity of the crucible into a first sublimation zone and a second sublimation zone arranged longitudinally and interconnected; the raw material crucible assembly includes a raw material crucible for holding aluminum nitride raw material; the first fixing structure is used to fix a first seed crystal, the growth surface of the first seed crystal being exposed to the first sublimation zone; the second fixing structure is used to fix a second seed crystal, the growth surface of the second seed crystal being exposed to the second sublimation zone. Under high temperature conditions, the aluminum nitride raw material in the raw material crucible undergoes a sublimation reaction to generate gaseous substances, which diffuse from the raw material crucible to both the first and second sublimation zones simultaneously. The gaseous substances are deposited on the growth surfaces of the first and second seed crystals, achieving crystal growth through homoepitaxial growth, thereby realizing the simultaneous growth of two aluminum nitride ingots in a single furnace, improving production efficiency and reducing energy consumption. Moreover, the arrangement of the first and second flow guides makes it easier for gaseous materials to be directly guided to the growth surfaces of the two seed crystals, reducing lateral dispersion, improving the effective transport rate, and enabling more uniform transport to the growth surfaces of the seed crystals, which helps to improve the quality of aluminum nitride ingots.

[0064] The detailed descriptions listed above are merely specific descriptions of feasible implementations of this utility model, and are not intended to limit the scope of protection of this utility model. All equivalent implementations or modifications made without departing from the spirit of this utility model should be included within the scope of protection of this utility model.

[0065] It will be apparent to those skilled in the art that this invention is not limited to the details of the exemplary embodiments described above, and that it can be implemented in other specific forms without departing from the spirit or essential characteristics of this invention. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of this invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within this invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0066] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. An aluminum nitride growth apparatus, characterized in that, include: The crucible, the raw material crucible assembly disposed in the middle of the crucible, and the first fixing structure and the second fixing structure respectively disposed on the upper and lower sides of the raw material crucible assembly along the longitudinal direction; The raw material crucible assembly divides the inner cavity of the crucible into a first sublimation zone and a second sublimation zone that are arranged longitudinally and are interconnected. The raw material crucible assembly includes a raw material crucible, which is used to hold aluminum nitride raw material; The first fixing structure is used to fix the first seed crystal and expose the growth surface of the first seed crystal to the first sublimation region; The second fixing structure is used to fix the second seed crystal and expose the growth surface of the second seed crystal to the second sublimation region.

2. The aluminum nitride growth apparatus according to claim 1, characterized in that, The first fixed structure is internally configured with a first guiding structure for guiding the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible to the growth surface of the first seed crystal in the first sublimation zone. The second fixed structure is internally configured with a second guiding structure for guiding the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible to the growth surface of the second seed crystal in the second sublimation zone.

3. The aluminum nitride growth apparatus according to claim 1, characterized in that, The aluminum nitride growth apparatus further includes: a first flow guide hood disposed longitudinally between the raw material crucible and the first fixed structure, and a second flow guide hood disposed longitudinally between the raw material crucible and the second fixed structure; The first flow guide is used to guide the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible to the growth surface of the first seed crystal in the first sublimation zone, and the second flow guide is used to guide the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible to the growth surface of the second seed crystal in the second sublimation zone.

4. The aluminum nitride growth apparatus according to claim 1, characterized in that, The first fixed structure is internally configured with a first guiding structure for guiding the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible to the growth surface of the first seed crystal in the first sublimation zone; the aluminum nitride growth apparatus further includes: a second flow guide hood disposed longitudinally between the raw material crucible and the second fixed structure, the second flow guide hood being used to guide the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible to the growth surface of the second seed crystal in the second sublimation zone; Alternatively, the aluminum nitride growth apparatus further includes: a first flow guide hood longitudinally disposed between the raw material crucible and the first fixed structure, the first flow guide hood being used to guide the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible to the growth surface of the first seed crystal in the first sublimation zone; and a second guiding structure being constructed inside the second fixed structure to guide the gaseous material generated by the sublimation of aluminum nitride raw material in the raw material crucible to the growth surface of the second seed crystal in the second sublimation zone.

5. The aluminum nitride growth apparatus according to claim 2 or 4, characterized in that, The middle part of the first fixing structure is configured with a first slot for supporting the first seed crystal, and the inner diameter of the first guiding structure decreases from the bottom of the first fixing structure toward one side of the first slot. The middle part of the second fixing structure is configured with a second slot for supporting the second seed crystal, and the inner diameter of the second guide structure decreases from the bottom of the second fixing structure toward one side of the second slot.

6. The aluminum nitride growth apparatus according to claim 3 or 4, characterized in that, The inner diameter of the first flow guide hood decreases from the raw material crucible toward the first fixed structure, and a plurality of first through holes are formed on the side of the first flow guide hood near the growth surface of the first seed crystal. The inner diameter of the second flow guide shroud decreases from the raw material crucible toward the side of the second fixed structure, and a plurality of second through holes are formed on the side of the second flow guide shroud near the growth surface of the second seed crystal.

7. The aluminum nitride growth apparatus according to claim 1, characterized in that, The crucible includes: a crucible bottom, a crucible lid, and a crucible cylinder with openings at both ends and adjustable height. The bottom of the crucible cylinder is installed on the crucible bottom, and the crucible lid is installed on the top opening of the crucible cylinder. The aluminum nitride growth apparatus further includes: a first sleeve and a second sleeve continuously arranged longitudinally and attached to the inner wall of the crucible; the first sleeve extends longitudinally to the installation gap between the crucible cover and the crucible cylinder, and the second sleeve extends longitudinally to the installation gap between the crucible cylinder and the crucible bottom.

8. The aluminum nitride growth apparatus according to claim 7, characterized in that, The raw material crucible assembly further includes a support portion that protrudes outward in the circumferential direction and extends between the first sleeve and the second sleeve, wherein the first sleeve and the second sleeve abut against the outer periphery of the support portion in the longitudinal direction; The first sleeve extends longitudinally and cooperates with the crucible lid to abut against the first fixing structure, and the second sleeve extends longitudinally and cooperates with the bottom of the crucible to abut against the second fixing structure.

9. The aluminum nitride growth apparatus according to claim 8, characterized in that, The support portion is constructed with a plurality of fifth through holes, and the first sublimation region and the second sublimation region are connected through the fifth through holes.

10. The aluminum nitride growth apparatus according to claim 1, characterized in that, The raw material crucible has multiple third through holes formed on one side of the first sublimation zone, and the raw material crucible has multiple fourth through holes formed on one side of the peripheral wall of the second sublimation zone.

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