Ion source cavity structure, ion source and ion implanter

Abstract

The utility model provides an ion source cavity structure, an ion source and an ion implanter. The cavity structure comprises a first arc chamber, a second arc chamber, a first cathode unit, a second cathode unit and a switch. One end of the first arc chamber away from the second arc chamber is provided with an air inlet, and one end of the second arc chamber away from the first arc chamber is provided with an ion outlet; the first cathode unit is arranged on one side of the first arc chamber, and the first cathode unit and the first arc chamber are electrically insulated from each other; the switch is connected in series with the first cathode unit; the second cathode unit is arranged on one side of the second arc chamber, and the second cathode unit and the second arc chamber are electrically insulated from each other. According to the utility model, the gas dissociation efficiency can be effectively improved, so that the size of an ion beam can be effectively improved, the whole process circulation time during the running of goods on a machine table is reduced, and the production efficiency of the machine table is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor equipment, especially to an ion source cavity structure, an ion source and an ion implanter. BACKGROUND

[0002] In the semiconductor manufacturing technology, ion implantation can change the carrier concentration and type of the semiconductor through localized and quantitative doping, and becomes an effective method for changing the electrical properties of the wafer.

[0003] In the ion implantation process, gas molecules first enter the ion source cavity from the steel bottle to be dissociated into various ions, and the target ion species are selected and injected through different selection and acceleration modules.

[0004] The current ion source cavity dissociation process can be summarized as follows: the heating filament generates electrons, the electrons collide with the cathode cap to generate secondary electrons, the magnetic field is increased in the upward and downward directions of the arc chamber to make the electrons spiral in the arc chamber, the gas is bombarded to generate more secondary electrons and ions, and when enough ions are generated and fill the entire arc chamber, the ions are introduced into the selection and acceleration (Beam Line) area.

[0005] When the ions enter the selection and acceleration area, the target mass-to-charge ratio ions are selected through adjusting the magnetic field strength and the size of the slit baffle opening in the mass selection module, and most of the ions are discharged from the machine table in the form of waste gas in this process.

[0006] In the prior art, the ion source cavity basically has the problem of realizing one-time dissociation or two-time dissociation of ions, which limits the dissociation efficiency of the target ions, causing the problem that the ion beam current size of high-valence ions and low-valence ions is limited in actual use, and the ion beam current is too small, which causes the TC (Total Cycle Time) to be long when the machine table runs out of goods and limits the improvement of the WPH (Wafer Per Hour) value of the machine table.

[0007] It should be noted that the information disclosed in the background technology section of the utility model is only intended to deepen the understanding of the general background technology of the utility model, and should not be regarded as acknowledging or implying in any form that the information constitutes prior art known to those skilled in the art. CONTENT OF THE UTILITY MODEL

[0008] The utility model aims to provide an ion source cavity structure, an ion source and an ion implanter, which can effectively improve the gas dissociation efficiency, thereby effectively improving the ion beam current size, reducing the overall process cycle time when the machine table runs out of goods, and improving the production efficiency of the machine table (i.e. improving the WPH value of the machine table).

[0009] To achieve the above object, the utility model provides a kind of ion source cavity structure, the ion source cavity structure includes first arc chamber, second arc chamber, first cathode unit, second cathode unit and switch;The end of the first arc chamber away from the second arc chamber is equipped with gas inlet, and the end of the second arc chamber away from the first arc chamber is equipped with ion exit;The first cathode unit is arranged at one side of the first arc chamber, and the first cathode unit and the first arc chamber are electrically insulated from each other;The switch is connected in series with the first cathode unit;The second cathode unit is arranged at one side of the second arc chamber, and the second cathode unit and the second arc chamber are electrically insulated from each other.

[0010] Optionally, the ion source cavity structure provided by the utility model further includes a deceleration unit arranged between the first arc chamber and the second arc chamber.

[0011] Optionally, the deceleration unit includes a deceleration chamber, one end of the deceleration chamber is in communication with the first arc chamber, and the other end of the deceleration chamber is in communication with the second arc chamber.

[0012] Optionally, the inner diameter of the end of the deceleration chamber close to the first arc chamber is smaller than the inner diameter of the end of the deceleration chamber close to the second arc chamber.

[0013] Optionally, the first cathode unit and the second cathode unit are located at different sides of the ion source cavity structure.

[0014] Optionally, the ion source cavity structure provided by the utility model further includes a first reflection unit and a second reflection unit, the first reflection unit is arranged at the other side of the first arc chamber, and the first reflection unit and the arc chamber are electrically insulated from each other;The second reflection unit is arranged at the other side of the second arc chamber, and the second reflection unit and the arc chamber are electrically insulated from each other.

[0015] Optionally, the first cathode unit includes a first filament and a first cathode cap, the first cathode cap is electrically insulated and connected with one side wall of the first arc chamber, the first filament is connected in series with the switch, the first filament is located in the first cathode cap, and there is a gap between the first filament and the inner wall of the first cathode cap.

[0016] Optionally, the second cathode unit includes a second filament and a second cathode cap, the second cathode cap is electrically insulated and connected with one side wall of the second arc chamber, the second filament is located in the second cathode cap, and there is a gap between the second filament and the inner wall of the second cathode cap.

[0017] To achieve the above object, the utility model provides an ion source, the ion source includes the ion source cavity structure of any one of the above.

[0018] To achieve the above object, the utility model provides an ion implanter, the ion implanter includes the ion source of the above.

[0019] Compared with the prior art, the ion source cavity structure, the ion source and the ion implanter provided by the utility model have the following beneficial effects:

[0020] The ion source cavity structure provided by the utility model includes a first arc chamber, a second arc chamber, a first cathode unit, a second cathode unit and a switch, one end of the first arc chamber away from the second arc chamber is provided with an air inlet, one end of the second arc chamber away from the first arc chamber is provided with an ion outlet, the first cathode unit is arranged on one side of the first arc chamber, and the first cathode unit and the first arc chamber are electrically insulated from each other, the switch is connected in series with the first cathode unit, the second cathode unit is arranged on one side of the second arc chamber, and the second cathode unit and the second arc chamber are electrically insulated from each other. Therefore, by arranging the switch connected in series with the first cathode unit, the working mode of the ion source cavity structure can be controlled by controlling the closing and opening of the switch: when the switch is closed, the first cathode unit can emit electrons into the first arc chamber, thereby assisting the primary dissociation of the gas introduced into the first arc chamber through the air inlet, after the primary dissociation of the gas in the first arc chamber is completed, the primary dissociated ions will perform a secondary dissociation action under the bombardment of the electrons generated by the second cathode unit, after the secondary dissociation is completed, the formed ions are introduced into the screening acceleration zone from the ion outlet on the second arc chamber under the action of the electric field, and this working mode is suitable for dissociating high-valence state ions. When the switch is opened, the first cathode unit cannot emit electrons into the first arc chamber, and the gas introduced into the first arc chamber will complete primary dissociation under the bombardment of the electrons generated by the second cathode unit after entering the second arc chamber. This working mode is suitable for dissociating low-valence state ions. As can be seen, the ion source cavity structure provided by the utility model can realize the control of primary dissociation and secondary dissociation of the gas, effectively solve the problem of low gas utilization rate of the existing ion source cavity, thereby effectively increase the gas dissociation efficiency, effectively increase the ion beam current size, thereby effectively reduce the overall process cycle time when the machine runs, and improve the production efficiency of the machine (i.e. improve the WPH value of the machine).

[0021] The ion implantation machine provided by the utility model has at least all the beneficial effects of the ion source cavity structure provided by the utility model, and the beneficial effects of the ion source cavity structure provided by the utility model are specifically described in the foregoing, and thus, the description is not repeated here. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 The overall structure schematic diagram of the ion source cavity structure provided by an embodiment of the utility model is shown.

[0023] Among them, the sign explanation is as follows:

[0024] First arc chamber-100; air inlet-110; second arc chamber-200; ion extraction outlet-210; first cathode unit-310; first filament-311; first cathode cap-312; second cathode unit-320; second filament-321; second cathode cap-322; switch-400; deceleration unit-500; deceleration chamber-510; first reflection unit-610; first reflection electrode-611; second reflection unit-620; second reflection electrode-621; first fixing part-710; second fixing part-720; third fixing part-730; fourth fixing part-740; suppression electrode-810; grounding electrode-820; ion beam-900. DETAILED DESCRIPTION

[0025] The ion source cavity structure, ion source and ion implanter according to the present application will be further described below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present application will be more apparent from the following description. It should be noted that the accompanying drawings are very simplified and all use non-precise proportions, only for the purpose of facilitating and clarifying the purpose of assisting the description of the embodiments of the present application. In order to make the purpose, features and advantages of the present application more apparent and easy to understand, please refer to the accompanying drawings. It should be noted that the structure, proportion, size and the like shown in the drawings of the present application are only used to cooperate with the content disclosed in the specification, so that those skilled in the art can understand and read, and are not used to limit the conditions of the implementation of the present application. Any modification of structure, change of proportion relationship or adjustment of size, as long as it is the same or similar to the effect and purpose that can be achieved by the present application, should still fall within the scope of the technical content disclosed by the present application. The specific design features of the present application disclosed in this paper include, for example, specific dimensions, directions, positions and shapes, which will be determined partly by the specific application and use environment. In addition, in the following description of the embodiments, sometimes the same reference signs are used between different drawings to represent the same parts or parts with the same function, and the repeated description is omitted. In this specification, similar signs and letters are used to represent similar items, so once an item is defined in one drawing, it does not need to be further discussed in the subsequent drawings. In addition, if the method described herein includes a series of steps, and the order of the steps presented herein is not necessarily the only order in which these steps can be performed, and some of the described steps can be omitted and / or some other steps not described herein can be added to the method.

[0026] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations, nor should they be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. The singular forms “a,” “one,” and “the” include plural objects. The term “or” is generally used to mean “and / or.” The term “several” is generally used to mean “at least one.” The term “at least two” is generally used to mean “two or more.” The term “multiple” is generally used to mean “at least two.”

[0027] In the description of the utility model, need understanding is, the term "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential" orientation or positional relationship indicated in the drawing is based on the orientation or positional relationship shown in the drawing, just for the convenience of describing the utility model and simplifying the description, and not indicate or imply that the device or element indicated must have a particular orientation, be constructed and operated in a particular orientation, therefore can not be understood as a limitation on the utility model. In the description of the utility model, unless otherwise expressly specified and limited, the terms "mounting", "connection", "connection", "fixing" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated, it can be mechanically connected, or it can be electrically connected, it can be directly connected, or it can be indirectly connected through an intermediate medium, it can be the communication between two elements or the interaction relationship between two elements. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances. In addition, in the utility model, unless otherwise expressly specified and limited, the first feature is "on" or "below" the second feature, which can include the direct contact between the first and second features, or it can include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, the first feature "above", "above" and "above" the second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0028] The core idea of the utility model lies in providing an ion source cavity structure, an ion source and an ion implanter, which can effectively improve the gas dissociation efficiency, thereby effectively improving the ion beam current size, reducing the overall process cycle time when the machine runs, and improving the production efficiency of the machine (i.e. improving the WPH value of the machine).

[0029] To realize the above idea, the utility model provides an ion source cavity structure, please refer to Figure 1 , which is the overall structure schematic diagram of the ion source cavity structure provided by an embodiment of the utility model. As Figure 1The ion source cavity structure provided by the utility model has the advantages that the first cathode unit 310 and the second cathode unit 320 are arranged on the first arc chamber 100 and the second arc chamber 200 respectively, and the first cathode unit 310 and the second cathode unit 320 are electrically insulated from the first arc chamber 100 and the second arc chamber 200 respectively, and the switch 400 is connected in series with the first cathode unit 310, so that the working mode of the ion source cavity structure can be controlled by controlling the closing and opening of the switch 400, that is, when the switch 400 is closed, the first cathode unit 310 can emit electrons into the first arc chamber 100, thereby assisting the primary dissociation of the gas introduced into the first arc chamber 100 through the gas inlet 110, and when the primary dissociation of the gas is completed in the first arc chamber 100, the primary dissociated ions will be subjected to a secondary dissociation under the bombardment of the electrons generated by the second cathode unit 320, and after the secondary dissociation is completed, the formed ions are introduced into the screening acceleration zone from the ion outlet 210 on the second arc chamber 200 under the action of the electric field, and this working mode is suitable for dissociating high-valence state ions; and when the switch 400 is opened, the first cathode unit 310 cannot emit electrons into the first arc chamber 100, and the gas introduced into the first arc chamber 100 through the gas inlet 110 will be subjected to primary dissociation under the bombardment of the electrons generated by the second cathode unit 320 after entering the second arc chamber 200, and this working mode is suitable for dissociating low-valence state ions.

[0030] Therefore, by arranging the switch 400 connected in series with the first cathode unit 310, the working mode of the ion source cavity structure can be controlled by controlling the closing and opening of the switch 400, that is, when the switch 400 is closed, the first cathode unit 310 can emit electrons into the first arc chamber 100, thereby assisting the primary dissociation of the gas introduced into the first arc chamber 100 through the gas inlet 110, and when the primary dissociation of the gas is completed in the first arc chamber 100, the primary dissociated ions will be subjected to a secondary dissociation under the bombardment of the electrons generated by the second cathode unit 320, and after the secondary dissociation is completed, the formed ions are introduced into the screening acceleration zone from the ion outlet 210 on the second arc chamber 200 under the action of the electric field, and this working mode is suitable for dissociating high-valence state ions; and when the switch 400 is opened, the first cathode unit 310 cannot emit electrons into the first arc chamber 100, and the gas introduced into the first arc chamber 100 through the gas inlet 110 will be subjected to primary dissociation under the bombardment of the electrons generated by the second cathode unit 320 after entering the second arc chamber 200, and this working mode is suitable for dissociating low-valence state ions.

[0031] Specifically, the switch 400 can be an electric switch, and whether the switch 400 is turned on or not can be written in a corresponding Recipe (step). When low-valence ions need to be dissociated, the switch 400 is controlled to be in an off state, at which time the first cathode unit 310 is powered off and the second cathode unit 320 is powered on, and the dissociation gas completes a dissociation in the second arc chamber 200. When high-valence ions need to be dissociated, the switch 400 is controlled to be in an on state, at which time the first cathode unit 310 and the second cathode unit 320 are both powered on, and the dissociation gas completes a first dissociation in the first arc chamber 100 and a second dissociation in the second arc chamber 200.

[0032] Please continue to refer to Figure 1 As Figure 1 shown, in some exemplary embodiments, the first cathode unit 310 and the second cathode unit 320 are located on different sides of the ion source cavity structure. In this way, by arranging the first cathode unit 310 and the second cathode unit 320 on different sides of the ion source cavity structure, the gas entering the left and right sides of the ion source cavity structure can be more fully dissociated, thereby further improving the dissociation efficiency of the ion source cavity structure provided by the present application.

[0033] It should be noted that, although Figure 1 the first cathode unit 310 is located on the left side of the ion source cavity structure (first arc chamber 100) and the second cathode unit 320 is located on the right side of the ion source cavity structure (second arc chamber 200) are taken as examples for illustration, as can be understood by those skilled in the art, this does not constitute a limitation on the present application. In other embodiments, the first cathode unit 310 can also be arranged on the right side of the ion source cavity structure (first arc chamber 100), and the second cathode unit 320 can be arranged on the left side of the ion source cavity structure (second arc chamber 200).

[0034] Please continue to refer to Figure 1 As Figure 1 shown, in some exemplary embodiments, the ion source cavity structure provided by the present application further comprises a speed reduction unit 500 arranged between the first arc chamber 100 and the second arc chamber 200. In this way, by arranging the speed reduction unit 500 between the first arc chamber 100 and the second arc chamber 200, the gas flow rate can be reduced, the time of the gas inside the ion source cavity structure can be increased, and the probability of electron collision with gas molecules can be increased, thereby further improving the gas dissociation efficiency of the ion source cavity structure provided by the present application.

[0035] Please continue to refer to Figure 1 AsFigure 1 As shown, in some exemplary embodiments, the deceleration unit 500 includes a deceleration chamber 510, one end of which is connected to the first arc chamber 100, and the other end of which is connected to the second arc chamber 200. Therefore, by providing the deceleration chamber 510 between the first arc chamber 100 and the second arc chamber 200, the time the gas spends inside the ion source cavity structure can be effectively increased, thereby effectively increasing the probability of electrons colliding with gas molecules, and thus effectively improving the gas dissociation efficiency of the ion source cavity structure provided by this invention.

[0036] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the inner diameter of the end of the deceleration chamber 510 near the first arc chamber 100 is smaller than the inner diameter of the end of the deceleration chamber 510 near the second arc chamber 200. Since the inner diameter of the end of the deceleration chamber 510 near the first arc chamber 100 is smaller than the inner diameter of the end of the deceleration chamber 510 near the second arc chamber 200, i.e., the deceleration chamber 510 has a structure that is narrower at the top and wider at the bottom, according to Bernoulli's equation, the gas flowing out of the first arc chamber 100 (gas that has completed one dissociation when the switch 400 is closed, and gas that has not been dissociated when the switch 400 is open) will undergo a deceleration action within the deceleration chamber 510. This allows the gas to slowly enter the second arc chamber 200 at a lower flow rate, effectively reducing the gas flow velocity, increasing the time the gas spends inside the ion source cavity structure, increasing the probability of electrons colliding with gas molecules, and effectively improving the gas dissociation efficiency.

[0037] It should be noted that, as those skilled in the art will understand, in addition to using a deceleration chamber 510 as a deceleration unit 500 to reduce the gas flow rate, a suppression electrode can also be used as a deceleration unit 500 to reduce the gas flow rate, or a deceleration chamber 510 and a suppression electrode can be used together to form a deceleration unit 500 to reduce the gas flow rate. Of course, deceleration units 500 with structures other than deceleration chamber 510 and suppression electrode can also be used to reduce the gas flow rate.

[0038] Please continue to refer to this. Figure 1 ,like Figure 1As shown, in some exemplary embodiments, the first cathode unit 310 comprises a first filament 311 and a first cathode cap 312, the first cathode cap 312 is electrically insulatedly connected with a side wall of the first arc chamber 100, the first filament 311 is connected in series with the switch 400, the first filament 311 is located in the first cathode cap 312, and there is a gap between the first filament 311 and the inner wall of the first cathode cap 312. Thus, when the switch 400 is closed, the first filament 311 is powered on to start heating work to generate electrons, and the electrons generated by the first filament 311 will generate secondary electrons after hitting the first cathode cap 312. The secondary electrons are accelerated by the arc voltage applied between the first cathode cap 312 and the first arc chamber 100, and are emitted into the first arc chamber 100 as beam electrons with sufficient energy for gas molecules to ionize.

[0039] It should be noted that, as understood by those skilled in the art, the circuit structure formed by the first filament 311 and the switch 400 in series is connected at both ends with a first power supply (not shown in the figure). It should also be noted that, as understood by those skilled in the art, the utility model does not limit the specific structure of the first filament 311, and the first filament 311 can be Figure 1 In addition to the shape of the intermediate part formed by bending a single filament, which is helically bent and straight at both ends, other structures formed by bending a single filament can also be used, and the specific structure can be selected according to actual needs. In addition, it should be noted that the utility model does not limit the way in which the first cathode cap 312 is electrically insulatedly connected with a side wall of the first arc chamber 100, for example, a first fixing member 710 can be provided to fix the first cathode cap 312, so that there is a non-conductive gap between the first cathode cap 312 and the side wall of the first arc chamber 100.

[0040] Please continue to refer to Figure 1 As Figure 1As shown, in some exemplary embodiments, the second cathode unit 320 comprises a second filament 321 and a second cathode cap 322, the second cathode cap 322 is electrically insulatedly connected with a side wall of the second arc chamber 200, the second filament 321 is located in the second cathode cap 322, and there is a gap between the second filament 321 and the inner wall of the second cathode cap 322. Thus, when the second filament 321 starts to heat up after being powered on, electrons are generated, and the second filament 321 generates secondary electrons after the electrons hit the second cathode cap 322. The secondary electrons are accelerated by the arc voltage applied between the second cathode cap 322 and the second arc chamber 200, and are emitted into the second arc chamber 200 as beam electrons with sufficient energy for gas molecules to ionize.

[0041] It should be noted that, as understood by those skilled in the art, the two ends of the second filament 321 are connected with a second power supply (not shown in the figure), and the second power supply can be the same power supply as the first power supply or a different power supply. The specific setting can be made according to actual needs, and the utility model does not limit it. It should be noted that, as understood by those skilled in the art, the utility model does not limit the specific structure of the second filament 321. The second filament 321 can be a single filament, a double filament, or a multi-filament, and the specific structure of the second filament 321 can be selected according to actual needs. Figure 1 In addition, it should be noted that the utility model does not limit the way in which the second cathode cap 322 is electrically insulatedly connected with the side wall of the second arc chamber 200. For example, a second fixing member 720 can be provided to fix the second cathode cap 322, so that there is a non-conductive gap between the second cathode cap 322 and the side wall of the second arc chamber 200.

[0042] Please continue to refer to Figure 1 As Figure 1As shown, in some exemplary embodiments, the ion source cavity structure provided by this utility model further includes a first reflecting unit 610 and a second reflecting unit 620. The first reflecting unit 610 is disposed on the other side of the first arc chamber 100, and the first reflecting unit 610 is electrically insulated from the arc chamber. The second reflecting unit 620 is disposed on the other side of the second arc chamber 200, and the second reflecting unit 620 is electrically insulated from the arc chamber. Therefore, by providing the first reflecting unit 610, which is disposed opposite to the first cathode unit 310, on the other side of the first arc chamber 100, electrons within the first arc chamber 100 can be reflected by the first reflecting unit 610, thereby allowing electrons to remain within the first arc chamber 100, which helps to improve ion generation efficiency. Similarly, by providing the second reflecting unit 620, which is disposed opposite to the second cathode unit 320, on the other side of the second arc chamber 200, electrons within the second arc chamber 200 can be reflected by the second reflecting unit 620, thereby allowing electrons to remain within the second arc chamber 200, which also helps to improve ion generation efficiency.

[0043] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the first reflective unit 610 includes a first reflective electrode 611, which is electrically insulated from the other side wall of the first arc chamber 100. The first reflective electrode 611 and the first cathode cap 312 are disposed opposite to each other and are substantially parallel. Thus, the first reflective electrode 611 allows electrons within the first arc chamber 100 to be reflected, enabling electrons to remain within the first arc chamber 100, thereby effectively improving ion generation efficiency.

[0044] It should be noted that, as those skilled in the art will understand, a third power source (not shown in the figure) is connected between the first reflective electrode 611 and the first arc chamber 100. This third power source is an adjustable power source independent of the first power source and capable of independently adjusting its own potential relative to the first power source. Furthermore, it should be noted that, as those skilled in the art will understand, this invention does not limit the method by which the first reflective electrode 611 is electrically insulated from the other side wall of the first arc chamber 100. For example, a third fixing member 730 can be provided to fix the first reflective electrode 611, creating a non-conductive gap between the first reflective electrode 611 and the side wall of the second arc chamber 200.

[0045] Please continue to refer to this. Figure 1 ,like Figure 1As shown, in some exemplary embodiments, the second reflective unit 620 includes a second reflective electrode 621, which is electrically insulated from the other side wall of the second arc chamber 200. The second reflective electrode 621 and the second cathode cap 322 are disposed opposite to each other and are substantially parallel. Thus, the second reflective electrode 621 allows electrons within the second arc chamber 200 to be reflected, enabling electrons to remain within the second arc chamber 200, thereby effectively improving ion generation efficiency.

[0046] It should be noted that, as those skilled in the art will understand, a fourth power source (not shown in the figure) is connected between the second reflective electrode 621 and the second arc chamber 200. This fourth power source is an adjustable power source independent of the second power source and capable of independently adjusting its own potential relative to the second power source. Furthermore, it should be noted that, as those skilled in the art will understand, this invention does not limit the method by which the second reflective electrode 621 is electrically insulated from the other side wall of the second arc chamber 200. For example, a fourth fixing member 740 can be provided to fix the second reflective electrode 621, creating a non-conductive gap between the second reflective electrode 621 and the side wall of the second arc chamber 200.

[0047] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the ion source cavity structure provided by this invention further includes a suppression electrode 810 and a grounding electrode 820 disposed near the ion outlet 210. Therefore, by providing the suppression electrode 810 and the grounding electrode 820 near the ion outlet 210, the ion beam 900 can be effectively extracted smoothly from the second arc chamber 200.

[0048] To achieve the above-mentioned goals, this utility model also provides an ion source, which includes the ion source cavity structure described above. Since the ion source provided by this utility model includes the ion source cavity structure provided by this utility model, the ion source provided by this utility model possesses at least all the beneficial effects of the ion source cavity structure provided by this utility model. For details, please refer to the relevant descriptions above regarding the beneficial effects of the ion source cavity structure provided by this utility model; further elaboration will not be repeated here.

[0049] It should be noted that, as those skilled in the art will understand, further details regarding the structure and working principle of the ion source provided by this utility model can be adapted by referring to relevant technologies known to those skilled in the art, and will not be elaborated upon here.

[0050] To realize the above idea, the utility model still provides a kind of ion implanter, the ion implanter includes the ion source described above. Since the ion implanter provided by the utility model includes the ion source provided by the utility model, the ion implanter provided by the utility model also has at least all the beneficial effects of the ion source cavity structure provided by the utility model, and the specific beneficial effects of the ion source cavity structure provided by the utility model can be referred to the relevant description in the foregoing, which will not be repeated here.

[0051] It should be noted that, as can be understood by those skilled in the art, more structures and working principles of the ion implanter provided by the utility model can be understood adaptively by referring to the relevant technology known to those skilled in the art, and will not be described here.

[0052] In summary, compared with the prior art, the ion source cavity structure, ion source and ion implanter provided by the utility model have the following beneficial effects:

[0053] (1) The ion source cavity structure provided by the utility model can realize the control of one-time dissociation and secondary dissociation of gas, effectively solve the problem of low gas utilization rate of the existing ion source cavity, and thus can effectively increase the gas dissociation efficiency, effectively improve the ion beam current size, and thus can effectively reduce the overall process cycle time when the machine runs, improve the production efficiency of the machine (i.e. improve the WPH value of the machine).

[0054] (2) The first cathode unit 310 and the second cathode unit 320 are arranged on different sides of the ion source cavity structure, which can help the gas entering the left and right sides of the ion source cavity structure to be more fully dissociated, thereby further improving the dissociation efficiency of the ion source cavity structure provided by the utility model.

[0055] (3) The utility model discloses a speed reduction unit 500 is arranged between the first electric arc chamber 100 and the second electric arc chamber 200, can weaken gas flow rate, increase the time of gas in the ion source cavity structure inside, increase the probability of electron collision gas molecule, can further improve the gas dissociation efficiency of ion source cavity structure provided by the utility model.

[0056] It should be noted that in the description of the present specification, the description referring to the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any suitable manner in any one or more embodiments or examples. In addition, the person skilled in the art can combine and combine the different embodiments or examples described in the present specification and the features of the different embodiments or examples without contradiction.

[0057] It should also be noted that the above description is only a description of the preferred embodiment of the present utility model, and not any limitation on the scope of the present utility model, any modification of the above disclosure by the person skilled in the art belongs to the protection scope of the present utility model. Obviously, those skilled in the art can make various modifications and changes to the utility model without departing from the spirit and scope of the utility model. Thus, if these modifications and changes belong to the scope of the present utility model and its equivalent technology, the present utility model also intends to include these modifications and changes.

Claims

1. An ion source cavity structure, characterized in that, It includes a first arc chamber, a second arc chamber, a first cathode unit, a second cathode unit, and a switch; An air inlet is provided at the end of the first arc chamber that is away from the second arc chamber, and an ion outlet is provided at the end of the second arc chamber that is away from the first arc chamber. The first cathode unit is disposed on one side of the first arc chamber, and the first cathode unit and the first arc chamber are electrically insulated from each other; The switch is connected in series with the first cathode unit; The second cathode unit is disposed on one side of the second arc chamber, and the second cathode unit and the second arc chamber are electrically insulated from each other.

2. The ion source cavity structure according to claim 1, characterized in that, It also includes a deceleration unit disposed between the first arc chamber and the second arc chamber.

3. The ion source cavity structure according to claim 2, characterized in that, The deceleration unit includes a deceleration chamber, one end of which is connected to the first arc chamber, and the other end of which is connected to the second arc chamber.

4. The ion source cavity structure according to claim 3, characterized in that, The inner diameter of the deceleration chamber at the end closest to the first arc chamber is smaller than the inner diameter of the deceleration chamber at the end closest to the second arc chamber.

5. The ion source cavity structure according to claim 1, characterized in that, The first cathode unit and the second cathode unit are located on different sides of the ion source cavity structure.

6. The ion source cavity structure according to claim 1, characterized in that, It also includes a first reflecting unit and a second reflecting unit. The first reflecting unit is disposed on the other side of the first arc chamber and is electrically insulated from the arc chamber. The second reflecting unit is disposed on the other side of the second arc chamber and is electrically insulated from the arc chamber.

7. The ion source cavity structure according to claim 1, characterized in that, The first cathode unit includes a first filament and a first cathode cap. The first cathode cap is electrically insulated from one side wall of the first arc chamber. The first filament is connected in series with the switch. The first filament is located inside the first cathode cap, and there is a gap between the first filament and the inner wall of the first cathode cap.

8. The ion source cavity structure according to claim 1, characterized in that, The second cathode unit includes a second filament and a second cathode cap. The second cathode cap is electrically insulated from one side wall of the second arc chamber. The second filament is located inside the second cathode cap, and there is a gap between the second filament and the inner wall of the second cathode cap.

9. An ion source, characterized in that, The ion source cavity structure includes any one of claims 1 to 8.

10. An ion implanter, characterized in that, Includes the ion source as described in claim 9.

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