LED chip and light-emitting device

Abstract

According to the LED chip and the light-emitting device, a first electrode layer of the LED chip is connected with a first type semiconductor layer and a conductive substrate to form a common electrode of each light-emitting unit, and each second electrode layer is independently controlled; or, the second electrode layer is electrically connected with the conductive substrate to form a common electrode of each light-emitting unit, and each first electrode layer is independently controlled. Each light-emitting unit can be independently regulated and controlled and is matched with the light conversion layer to convert emergent light of the light-emitting surface, so that at least two light-emitting units emit light of different colors, light mixing and color temperature adjustment can be achieved through a single chip, chip-level light mixing is achieved, multi-bowl-cup packaging is not needed, the light mixing effect is improved, the size of the light source is reduced, and the cost is reduced. And integration and miniaturization are facilitated. The light-emitting device adopts the LED chip.

Description

Technical Field

[0001] This utility model relates to the field of light-emitting diode technology, and more specifically, to an LED chip and a light-emitting device. Background Technology

[0002] With the rapid development of LED technology and the gradual improvement of LED luminous efficacy, LED applications are becoming increasingly widespread, and people are paying more and more attention to the development prospects of LEDs in the lighting market. The function of an LED chip is to convert electrical energy into light energy. Specifically, an LED chip includes an epitaxial layer and N-type and P-type electrodes respectively disposed on the epitaxial layer. The epitaxial layer includes at least a P-type semiconductor layer, an N-type semiconductor layer, and an active layer located between the N-type and P-type semiconductor layers. When current flows through the LED chip, holes in the P-type semiconductor layer and electrons in the N-type semiconductor layer move towards the active layer and recombine there, causing the LED chip to emit light.

[0003] In LED applications, multi-color-temperature LEDs typically refer to a single LED chip achieving multiple color temperature combinations. Current technologies often employ a multi-cup design, with different phosphors in different cups to achieve different color temperatures, thus meeting diverse needs in various scenarios. During use, individual color temperatures can be selected separately, or they can be simultaneously lit to create mixed light. The color temperature can be adjusted by regulating the brightness of the chips in different cups. The color temperature of the light emitted from a multi-cup design is independently adjustable, unaffected by the light emitted from other cups. However, when lit simultaneously, the light spots emitted from each cup are usually inconsistent, and after mixing, light spot distortion can easily occur, affecting the lighting effect. Furthermore, multi-cup packaging results in a relatively large light source size, hindering integration and miniaturization.

[0004] This case arose from the aforementioned issues. Utility Model Content

[0005] In view of this, the present invention provides an LED chip and a light-emitting device, which can achieve light mixing with a single chip and can achieve multi-color temperature adjustment without the need for a multi-cup packaging scheme.

[0006] To achieve the above objectives, the technical solution adopted by this utility model is as follows:

[0007] An LED chip comprising:

[0008] Conductive substrate;

[0009] At least two light-emitting units are disposed on one side surface of the conductive substrate; each light-emitting unit includes a first type semiconductor layer, an active layer, and a second type semiconductor layer stacked sequentially along a first direction; the first direction is perpendicular to the conductive substrate and extends from the conductive substrate toward the light-emitting unit; each light-emitting unit has a light-emitting surface formed on its surface away from the conductive substrate;

[0010] First electrode layer and second electrode layer;

[0011] The second electrode layer is stacked on the surface of the conductive substrate facing the light-emitting unit and is electrically connected to the conductive substrate. A portion of the electrode layer extends into each light-emitting unit and is electrically connected to the second type semiconductor layer. Multiple first electrode layers are provided and are stacked on the surface of the first type semiconductor layer of each light-emitting unit away from the active layer, and extend out of each light-emitting unit to form exposed electrode pads. The second electrode layer is insulated from and isolated from the first type semiconductor layer and the first electrode layer.

[0012] Alternatively, the first electrode layer is located between the first type semiconductor layer and the conductive substrate, and conducts electricity between the first type semiconductor layer and the conductive substrate. Multiple second electrode layers are provided and are respectively located on the surface of the second type semiconductor layer of each light-emitting unit away from the conductive substrate, forming an electrical connection with the second type semiconductor layer.

[0013] A light conversion layer, which is disposed on at least one of the light-emitting surfaces.

[0014] Preferably, it further includes an optical isolation wall; the optical isolation wall is higher than the surface of each light-emitting surface and the surface of the light conversion layer away from the light-emitting surface along the first direction, and isolates two adjacent light-emitting surfaces to reduce optical crosstalk.

[0015] Preferably, the light isolation wall is arranged around each of the light-emitting surfaces.

[0016] Preferably, it also includes a growth substrate;

[0017] The growth substrate is located on the side of each light-emitting unit that is away from the conductive substrate, and each light-emitting unit is grown on the growth substrate; the growth substrate is opaque; the growth substrate is provided with a hollow portion to form the light isolation wall.

[0018] Preferably, it further includes a growth substrate and a reflective layer; the growth substrate is located on the side of each of the light-emitting units away from the conductive substrate, and each of the light-emitting units is grown on the growth substrate; the growth substrate has a hollow portion, and the sidewall of the hollow portion is covered by the reflective layer; the sidewall of the hollow portion and the reflective layer together form the light isolation wall.

[0019] Preferably, the light conversion layer is formed by spraying / spin-coating a light conversion material onto the light-emitting surface, or the light conversion layer is bonded to the light-emitting surface.

[0020] Preferably, the light conversion layer is made of a material including phosphors or quantum dots.

[0021] Preferably, when the second electrode layer is electrically connected to the conductive substrate, the second electrode layer is insulated and isolated from the first semiconductor layer and the first electrode layer through the first insulating layer;

[0022] Each of the light-emitting units has a groove with an opening facing the conductive substrate and exposing the surface of the second type semiconductor layer;

[0023] The second electrode layer extends into each of the grooves and is electrically connected to the second type semiconductor layer of each of the light-emitting units;

[0024] The first insulating layer is stacked on the side of each of the light-emitting units facing the conductive substrate, and covers the first electrode layer, and extends to the sidewall of the groove, so that the second electrode layer is insulated from the active layer, the first type semiconductor layer and the first electrode layer.

[0025] Preferably, it further includes a second insulating layer;

[0026] The second insulating layer covers a portion of the surface of the first semiconductor layer facing the conductive substrate and extends to the sidewall of the groove;

[0027] The second insulating layer is provided with a plurality of first through holes that expose the first type semiconductor layer of each of the light-emitting units; the second insulating layer is also provided with second through holes that expose the first electrode;

[0028] The first electrode layer is electrically connected to the first type of semiconductor layer through the first via, and the surface facing away from the conductive substrate is exposed to the second via to form an electrode pad.

[0029] This utility model also provides a light-emitting device, which includes the LED chip described in any of the above claims.

[0030] Compared with the prior art, the technical solution provided by this utility model has at least the following advantages:

[0031] 1. An LED chip comprising: a conductive substrate; at least two light-emitting units disposed on one side surface of the conductive substrate; each light-emitting unit comprising a first type semiconductor layer, an active layer, and a second type semiconductor layer sequentially stacked along a first direction; the first direction being perpendicular to the conductive substrate and extending from the conductive substrate toward the light-emitting unit; each light-emitting unit having a light-emitting surface formed on a surface away from the conductive substrate; a first electrode layer and a second electrode layer; the second electrode layer being stacked on the surface of the conductive substrate facing the light-emitting unit and electrically connected to the conductive substrate, and a portion thereof extending into each light-emitting unit and electrically connected to the second type semiconductor layer. The first electrode layer comprises multiple layers, which are respectively stacked on the surface of the first type semiconductor layer of each light-emitting unit away from the active layer, and extend to the outside of each light-emitting unit to form exposed electrode pads; the second electrode layer is insulated from the first type semiconductor layer and the first electrode layer; or, the first electrode layer is located between the first type semiconductor layer and the conductive substrate, and conducts between the first type semiconductor layer and the conductive substrate, and the second electrode layer comprises multiple layers and is respectively located on the surface of the second type semiconductor layer of each light-emitting unit away from the conductive substrate, forming an electrical connection with the second type semiconductor layer; a light conversion layer is provided on at least one of the light-emitting surfaces.

[0032] Due to the aforementioned structural configuration, the LED chip of this application forms a common electrode for each light-emitting unit by connecting the first electrode layer to the first type semiconductor layer and the conductive substrate, while each second electrode layer is independently controlled; alternatively, the second electrode layer is electrically connected to the conductive substrate to form a common electrode for each light-emitting unit, while each first electrode layer is independently controlled. Each light-emitting unit can be individually controlled, and in conjunction with the light conversion layer, the light emitted from the light-emitting surface is converted, allowing at least two light-emitting units to emit light of different colors. A single chip can achieve light mixing and color temperature adjustment, realizing chip-level light mixing without the need for multi-cup packaging, improving the light mixing effect, and reducing the size of the light source, facilitating integration and miniaturization.

[0033] 2. The installation of optical isolation walls isolates two adjacent light-emitting surfaces, reducing optical crosstalk between two adjacent light-emitting units.

[0034] 3. The optical isolation wall is made using the growth substrate on which each light-emitting unit is grown, eliminating the need for additional layer structures to form the optical isolation wall, thus saving materials and simplifying the manufacturing process. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0036] Figure 1 This is a schematic diagram of the structure of an embodiment of the LED chip of this application;

[0037] Figure 2 for Figure 1 A top-down view;

[0038] Figure 3 This is a schematic diagram of another embodiment of the LED chip in this application;

[0039] Figure 4 A schematic diagram of another embodiment of the LED chip in this application;

[0040] Figure 5 for Figure 4 A magnified view of part A in the image;

[0041] Figure 6 for Figure 4 A top-down view;

[0042] Figure 7 This is a schematic diagram of the structure of another embodiment of the LED chip in this application;

[0043] Figure 8 This is a schematic diagram of the structure of another embodiment of the LED chip in this application;

[0044] Figures 9-21 This is a schematic diagram of the LED chip manufacturing process of this application.

[0045] Figure label:

[0046] Conductive substrate 1; light-emitting unit 2; first type semiconductor layer 21; active layer 22; second type semiconductor layer 23; groove 24; first electrode layer 3; electrode pad 31; second electrode layer 4; light conversion layer 5; light isolation wall 6; first insulating layer 7; second insulating layer 8; first through hole 81; second through hole 82; bonding layer 9; growth substrate 10; first direction D. Detailed Implementation

[0047] To make the content of this utility model clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0048] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0049] Secondly, this application provides a detailed description in conjunction with schematic diagrams. When detailing the embodiments of this application, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not adhering to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this application. In addition, actual fabrication should include three-dimensional spatial dimensions of length, width, and depth.

[0050] like Figure 1 As shown, this application provides an LED chip, which includes a conductive substrate 1, at least two light-emitting units 2, a first electrode layer 3, a second electrode layer 4, and a light conversion layer 5.

[0051] At least two light-emitting units 2 are disposed on one side surface of the conductive substrate 1; each light-emitting unit 2 includes a first type semiconductor layer 21, an active layer 22, and a second type semiconductor layer 23 stacked sequentially along a first direction D; the first direction D is perpendicular to the conductive substrate 1 and points from the conductive substrate 1 to the light-emitting unit 2; each light-emitting unit 2 has a light-emitting surface formed on the surface away from the conductive substrate 1. One of the first type semiconductor layer 21 and the second type semiconductor layer 23 is an N-type semiconductor layer, and the other is a P-type semiconductor layer. This application uses a P-type semiconductor layer and an N-type semiconductor layer as an example for explanation. The number of light-emitting units 2 can be set to 2, 3, 4, or 5, etc., according to actual needs. This application uses two light-emitting units 2 as an example for explanation. Each light-emitting unit 2 can also be provided with other functional layers as needed.

[0052] The first electrode layer 3 and the second electrode layer 4 can be configured in either the first or the second manner described below.

[0053] The first setting method is as follows: Figure 1 , 2As shown, the second electrode layer 4 is stacked on the surface of the conductive substrate 1 facing the light-emitting unit 2 and is electrically connected to the conductive substrate 1. A portion of the second electrode layer 4 extends into each light-emitting unit 2 and is electrically connected to the second type semiconductor layer 23. Multiple first electrode layers 3 are disposed and stacked on the surface of the first type semiconductor layer 21 of each light-emitting unit 2, away from the active layer 22, and extend outwards to form exposed electrode pads 31. The second electrode layer 4 is insulated from the first type semiconductor layer 21 and the first electrode layers 3. Furthermore, the number of first electrode layers 3 is the same as the number of light-emitting units and corresponds one-to-one. Each electrode pad 31 contains a metal layer that allows for direct wire bonding; exposing this metal layer allows for direct wire bonding.

[0054] The second setting method is as follows: Figure 7 As shown, the first electrode layer 3 is located between the first type semiconductor layer 21 and the conductive substrate 1, and conducts electricity between the first type semiconductor layer 21 and the conductive substrate 1. Multiple second electrode layers 4 are disposed on the surfaces of the second type semiconductor layers 23 of each light-emitting unit 2 that are opposite to the conductive substrate 1, forming an electrical connection with the second type semiconductor layers 23. At least one bonding layer 9 is also provided between the first electrode layer 3 and the conductive substrate 1, bonding the conductive substrate 1 and each light-emitting unit 2 together. The bonding layer 9 conducts electricity between the conductive substrate 1 and the first electrode 3. An insulating layer is also provided on the surface of the bonding layer 9 facing the light-emitting unit 2, and the first electrode layer 3 is embedded in this insulating layer, with one surface in electrical contact with the first type semiconductor layer 21 and the other surface in electrical contact with the bonding layer 9.

[0055] The light conversion layer 5 is disposed on at least one light-emitting surface. Figure 1 The diagram shows that both light-emitting units 2 have a light conversion layer 5 on their light-emitting surfaces. Figure 3 The light conversion layer 5 is shown to be set on the light-emitting surface of only one light-emitting unit 2.

[0056] Due to the aforementioned structural configuration, the LED chip of this application forms a common electrode for each light-emitting unit 2 by connecting the first electrode layer 3 to the first type semiconductor layer 21 and the conductive substrate 1, and each second electrode layer 4 is independently controlled; alternatively, the second electrode layer 4 is electrically connected to the conductive substrate 1 to form a common electrode for each light-emitting unit 2, and each first electrode layer 3 is independently controlled. Each light-emitting unit 2 can be individually controlled, and in conjunction with the light conversion layer 5, the light emitted from the light-emitting surface is converted, so that at least two light-emitting units 2 emit light of different colors. A single chip can achieve light mixing and color temperature adjustment, realizing chip-level light mixing without the need for multi-cup packaging, improving the light mixing effect, and reducing the size of the light source, facilitating integration and miniaturization.

[0057] In a preferred embodiment, such as Figure 4 , 8As shown, the LED chip also includes an optical isolation wall 6. The optical isolation wall 6 is higher than the surface of each light-emitting surface and the light conversion layer 5 facing away from the light-emitting surface along the first direction D, and isolates two adjacent light-emitting surfaces to reduce optical crosstalk.

[0058] In a preferred embodiment, such as Figure 6 As shown, the light isolation wall 6 is set around each light-emitting surface.

[0059] In a preferred embodiment, the LED chip further includes a growth substrate 10. The growth substrate 10 is located on the side of each light-emitting unit 2 that is away from the conductive substrate 1, and each light-emitting unit 2 is grown on the growth substrate 10; the growth substrate 10 is opaque; the growth substrate 10 forms a light isolation wall 6 by providing a hollow portion.

[0060] In this method, the optical isolation wall 6 is fabricated using a growth substrate 10, eliminating the need for additional layer structures to form the optical isolation wall 6, thus saving materials and simplifying the fabrication process.

[0061] Figure 5 for Figure 4 A magnified view of part A in the image. Figure 5 The following example illustrates the specific installation method of the optical isolation wall 6 in this application. Figure 5 The optical isolation wall 6 formed by the growth substrate 10 is shown to be supported by an epitaxial layer, namely by a first type semiconductor layer, an active layer, and a second type semiconductor layer, and is spaced from the sidewalls of each light-emitting unit 2. It should be understood that the optical isolation wall 6 formed by the growth substrate 10 can also be located directly on the surface of each light-emitting unit 2 facing away from the conductive substrate 1.

[0062] In a preferred embodiment, the LED chip further includes a growth substrate 10 and a reflective layer. The growth substrate 10 is located on the side of each light-emitting unit 2 facing away from the conductive substrate 1, and each light-emitting unit 2 is grown on the growth substrate 10. The growth substrate 10 has a cutout portion, and the sidewalls of the cutout portion are covered with a reflective layer. The sidewalls of the cutout portion and the reflective layer together form a light-isolating wall. That is, when the growth substrate 10 is transparent, light isolation can be achieved by setting a reflective layer on the sidewalls of the cutout portion in this embodiment. The reflective layer can be a metal reflective layer or a DBR, etc.

[0063] In a preferred embodiment, the light conversion layer 5 is formed by spraying / spin-coating a light conversion material onto the light-emitting surface or by bonding the light conversion layer 5 to the light-emitting surface.

[0064] In a preferred embodiment, the light conversion layer 5 is made of a material containing phosphors or quantum dots.

[0065] like Figure 1-4As shown, when the second electrode layer 4 is electrically connected to the conductive substrate 1 (i.e., the first electrode layer 3 and the second electrode layer 4 are configured as described above), the second electrode layer 4 is insulated from the first type semiconductor layer 21 and the first electrode layer 3 through the first insulating layer 7. Each light-emitting unit 2 has a groove 24 with an opening facing the conductive substrate 1 and exposing the surface of the second type semiconductor layer 23. The second electrode layer 4 extends into each groove 24 and is electrically connected to the second type semiconductor layer 23 of each light-emitting unit 2; the first insulating layer 7 is stacked on the side of each light-emitting unit 2 facing the conductive substrate 1, covers the first electrode layer 3, and extends to the sidewall of the groove 24, so that the second electrode layer 4 is insulated from the active layer 22, the first type semiconductor layer 21, and the first electrode layer 3.

[0066] Further based on the above embodiments, the LED chip also includes a second insulating layer 8. The second insulating layer 8 covers a portion of the surface of the first type semiconductor layer 21 facing the conductive substrate 1 and extends to the sidewall of the groove 24; the second insulating layer 8 is provided with a plurality of first through holes 81 that expose the first type semiconductor layer of each light-emitting unit 2; the second insulating layer 8 is also provided with second through holes 82 that expose the first electrode; the first electrode layer 3 is electrically connected to the first type semiconductor layer 21 through the first through holes 81, and the surface facing away from the conductive substrate 10 is exposed to the second through holes 82 to form electrode pads 31.

[0067] To better understand the LED chip of this application, the fabrication process of the LED chip is described in detail with the first electrode layer 3 and the second electrode layer 4 using the first configuration method described above:

[0068] S01: As Figure 9 As shown, a growth substrate 10 is provided, and a second type semiconductor layer 23, an active layer 22 and a first type semiconductor layer 21 are sequentially grown on one side of the growth substrate 10.

[0069] S02: As Figure 10 As shown, multiple grooves 24 exposing the second type semiconductor layer 23 are fabricated by an etching process.

[0070] S03: As Figure 11 As shown, a second insulating layer 8 is deposited to cover the exposed surface of the epitaxial layer, and a plurality of first vias 81 are etched to form.

[0071] S04: As Figure 12 As shown, multiple independent first electrode layers 3 are fabricated through processes such as evaporation, sputtering, or electroplating. Each first electrode layer 3 fills a first through-hole 81 and is electrically connected to the first type semiconductor layer 21. Furthermore, a portion of each first electrode layer 3 is stacked on a second insulating layer 8, which facilitates the subsequent etching of the second insulating layer 8 to expose each first electrode layer 3.

[0072] S05: As Figure 13As shown, a first insulating layer 7 is deposited to cover the exposed surface of the epitaxial layer, and a portion of the first insulating layer 7 and the second insulating layer 8 at the bottom of the groove 24 are etched away to expose the second type semiconductor layer 23.

[0073] S06: As Figure 14 As shown, the second electrode layer 4 is fabricated by processes such as evaporation, sputtering or electroplating, and a portion of the second electrode layer 4 is embedded in each groove 24 and electrically connected to the second type semiconductor layer 23.

[0074] S07: As Figure 15 As shown, the second electrode layer 4 is bonded to the conductive substrate 1 on the surface away from the growth substrate 10 through a bonding process.

[0075] S08: As Figure 16 As shown, the growth substrate 10 is removed.

[0076] S09: As Figure 17 As shown, multiple independent light-emitting units 2 are formed by etching and dividing the first type semiconductor layer 21, the active layer 22, and the second type semiconductor layer 23, and a portion of the second insulating layer 8 is exposed.

[0077] S10: As Figure 18 As shown, the second insulating layer 8 is etched to form a second through-hole 82, and electrode pads 31 are formed by exposing the surface of each first electrode layer 3 through the second through-hole 82. The exposed surface of each first electrode layer 3 contains a metal layer that can be directly wire-bonded, and wires can be directly bonded to it.

[0078] S11: Cut the above-mentioned semi-finished product to form an LED chip containing at least two light-emitting units 2.

[0079] S12: A light conversion layer is fabricated on the light-emitting surface of each light-emitting unit 2, forming a light conversion layer as shown in the figure. Figure 1 , 3 The LED chip shown is an example. The light conversion layer can also be fabricated after the LED chip is die-bonded to the package substrate and then wire-bonded.

[0080] When the LED chip contains an optical isolation wall 6, the manufacturing method of the LED chip is roughly the same as described above, with the main difference being in step S08. For example... Figure 19 As shown, when the growth substrate 10 is opaque, step S08 specifically involves selectively removing a portion of the growth substrate 10, i.e., forming a cutout on the growth substrate 10 to form a light-isolating wall. Following step S08, as... Figure 20 , 21 As shown, continue with steps S09-S12 above to form... Figure 4The LED chip shown. When the growth substrate 10 is transparent, step S08 specifically involves: selectively removing a portion of the growth substrate 10, i.e., forming a cutout portion on the growth substrate 10. A reflective layer is fabricated on the sidewall of the cutout portion. The sidewall of the cutout portion and the reflective layer together form a light-isolating wall 6.

[0081] This application also provides a light-emitting device, which includes the LED chip described in any of the above embodiments, and has the beneficial effects of the LED chip in any of the above embodiments, which will not be repeated here.

[0082] Those skilled in the art should understand that in the disclosure of this utility model, the terms "lateral", "longitudinal", "upper", "lower", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the above terms should not be construed as a limitation of this utility model.

[0083] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0084] The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An LED chip, characterized in that, include: Conductive substrate; At least two light-emitting units are disposed on one side surface of the conductive substrate; Each of the light-emitting units includes a first type semiconductor layer, an active layer, and a second type semiconductor layer stacked sequentially along a first direction; the first direction is perpendicular to the conductive substrate and extends from the conductive substrate toward the light-emitting unit; Each of the light-emitting units has a light-emitting surface formed on the surface away from the conductive substrate; First electrode layer and second electrode layer; The second electrode layer is stacked on the surface of the conductive substrate facing the light-emitting unit and is electrically connected to the conductive substrate. A portion of the electrode layer extends into each light-emitting unit and is electrically connected to the second type semiconductor layer. Multiple first electrode layers are provided and are stacked on the surface of the first type semiconductor layer of each light-emitting unit away from the active layer, and extend out of each light-emitting unit to form exposed electrode pads. The second electrode layer is insulated from and isolated from the first type semiconductor layer and the first electrode layer. Alternatively, the first electrode layer is located between the first type semiconductor layer and the conductive substrate, and conducts electricity between the first type semiconductor layer and the conductive substrate. Multiple second electrode layers are provided and are respectively located on the surface of the second type semiconductor layer of each light-emitting unit away from the conductive substrate, forming an electrical connection with the second type semiconductor layer. A light conversion layer, which is disposed on at least one of the light-emitting surfaces.

2. The LED chip as described in claim 1, characterized in that, It also includes an optical isolation wall; the optical isolation wall is higher than the surface of each light-emitting surface and the surface of the light conversion layer that is away from the light-emitting surface along the first direction, and isolates two adjacent light-emitting surfaces to reduce optical crosstalk.

3. An LED chip as described in claim 2, characterized in that, The light isolation wall is arranged around each of the light-emitting surfaces.

4. An LED chip as described in claim 2 or 3, characterized in that, It also includes the growth substrate; The growth substrate is located on the side of each light-emitting unit that is away from the conductive substrate, and each light-emitting unit is grown on the growth substrate; the growth substrate is opaque; the growth substrate is provided with a hollow portion to form the light isolation wall.

5. An LED chip as described in claim 2 or 3, characterized in that, It also includes a growth substrate and a reflective layer; the growth substrate is located on the side of each of the light-emitting units away from the conductive substrate, and each of the light-emitting units is grown on the growth substrate; the growth substrate has a hollow portion, and the sidewall of the hollow portion is covered by the reflective layer; the sidewall of the hollow portion and the reflective layer together form the light isolation wall.

6. An LED chip as described in claim 1, characterized in that, The light conversion layer is formed by spraying / spin-coating a light conversion material onto the light-emitting surface, or the light conversion layer is bonded to the light-emitting surface.

7. An LED chip as described in claim 1, characterized in that, The light conversion layer is made of a material containing phosphors or quantum dots.

8. An LED chip as described in claim 1, characterized in that, When the second electrode layer is electrically connected to the conductive substrate, the second electrode layer is insulated and isolated from the first semiconductor layer and the first electrode layer through the first insulating layer. Each of the light-emitting units has a groove with an opening facing the conductive substrate and exposing the surface of the second type semiconductor layer; The second electrode layer extends into each of the grooves and is electrically connected to the second type semiconductor layer of each of the light-emitting units; The first insulating layer is stacked on the side of each of the light-emitting units facing the conductive substrate, and covers the first electrode layer, and extends to the sidewall of the groove, so that the second electrode layer is insulated from the active layer, the first type semiconductor layer and the first electrode layer.

9. An LED chip as described in claim 8, characterized in that, It also includes a second insulating layer; The second insulating layer covers a portion of the surface of the first semiconductor layer facing the conductive substrate and extends to the sidewall of the groove; The second insulating layer is provided with a plurality of first through holes that expose the first type semiconductor layer of each of the light-emitting units; the second insulating layer is also provided with second through holes that expose the first electrode; The first electrode layer is electrically connected to the first type of semiconductor layer through the first via, and the surface facing away from the conductive substrate is exposed to the second via to form an electrode pad.

10. A light-emitting device, characterized in that, Includes the LED chip described in any one of claims 1-9 above.

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