Wafer etching device

Abstract

The embodiment of the utility model provides a wafer etching device, and the device comprises a cavity which is provided with a cavity and a maintenance port, and the maintenance port is communicated with the cavity and is used for providing a channel for a maintenance tool to enter and exit from the cavity; the base is positioned in the cavity and is used for bearing a wafer; the sealing cover is positioned at the maintenance port, is detachably connected with the cavity and is used for sealing the maintenance port; the handle is fixedly arranged on the first end face, away from the cavity, of the sealing cover and used for providing a holding position. By adopting the technical scheme, secondary pollution occurring in the disassembly and assembly process of the wafer etching device can be reduced.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor equipment technology, and more particularly to a wafer etching apparatus. Background Technology

[0002] In plasma etching processes, the yield of wafer etched products is related to the etching environment. Therefore, it is necessary to periodically disassemble and reassemble the wafer etching equipment to maintain the chambers inside the equipment.

[0003] Therefore, how to reduce secondary contamination during the assembly and disassembly of wafer etching equipment is a question worth discussing. Utility Model Content

[0004] In view of this, embodiments of the present disclosure provide a wafer etching apparatus that can reduce secondary contamination during the assembly and disassembly process.

[0005] To address the aforementioned technical problems, this disclosure provides a wafer etching apparatus, wherein the wafer etching apparatus includes:

[0006] The cavity has a chamber and a maintenance port, the maintenance port being connected to the chamber and providing a passage for maintenance tools to enter and exit the chamber;

[0007] A base, located within the cavity, is used to support the wafer;

[0008] A cover, located at the maintenance port and detachably connected to the cavity, is used to block the maintenance port;

[0009] A handle is fixed to the first end face of the cover away from the chamber, for providing a gripping position.

[0010] Optionally, the number of handles is multiple, and the multiple handles are distributed along the circumference of the cover on the first end face of the cover.

[0011] Optionally, the number of handles is multiple, with two handles forming a group of handles, and the two handles in a group of handles are symmetrically arranged about the central axis of the cover.

[0012] Optionally, the wafer etching apparatus further includes:

[0013] A lifting component is fixed to the first end face of the cover and located at the central axis of the cover.

[0014] Optionally, the wafer etching apparatus further includes:

[0015] Gas supply equipment, used to provide process gases;

[0016] Gas supply assembly, the gas supply assembly comprising:

[0017] A gas supply pipe, the first end of which is connected to the gas supply equipment;

[0018] The nozzle has a first end connected to the second end of the air supply pipe, the nozzle is disposed on the cover, and the second end of the nozzle is located in the cavity.

[0019] Optionally, there are multiple gas supply pipes, each connected to the nozzle, and the first end of each gas supply pipe is connected to a different gas supply device, wherein the different gas supply devices are used to provide different process gases.

[0020] Optionally, the base has a plurality of placement areas for placing wafers;

[0021] The number of gas supply components is multiple, and each gas supply component corresponds to a placement area.

[0022] Optionally, the wafer etching apparatus also includes:

[0023] Waste gas treatment equipment is used to treat waste gas after the process.

[0024] Exhaust assembly, the exhaust assembly comprising:

[0025] An exhaust pipe, the first end of which is connected to the chamber and the connection point of which is located below the base, and the second end of which is connected to the waste gas treatment equipment;

[0026] A drive unit, disposed on the exhaust pipe, is used to adjust the exhaust flow rate and exhaust pressure of the exhaust gas discharged through the exhaust pipe.

[0027] Optionally, the exhaust assembly further includes:

[0028] A monitoring device is installed on the exhaust pipe to monitor the composition of the exhaust gas in the exhaust pipe and send a monitoring signal.

[0029] The controller is coupled to the monitoring device and the driving device respectively, and is used to receive the monitoring signal emitted by the monitoring device and output the control signal to the driving device according to the monitoring signal, so as to adjust the exhaust flow rate and exhaust pressure of the exhaust gas discharged through the exhaust pipe.

[0030] Optionally, the number of monitoring devices is multiple, and at least two types of monitoring devices exist among the multiple monitoring devices, wherein the different types of monitoring devices sense different types of exhaust gas.

[0031] Compared with the prior art, the technical solution of the present disclosure has the following advantages:

[0032] The wafer etching apparatus in this embodiment has a cavity with a chamber and a maintenance port. The maintenance port communicates with the cavity. A cover is located at the maintenance port to seal it. The cover is detachably connected to the cavity. When maintaining the cavity, the cover can be removed from the maintenance port to expose it, allowing maintenance tools to enter the cavity for maintenance. A handle is fixed to the first end face of the cover away from the cavity. By holding the handle and moving the cover to a safe area, direct contact between the hand and the end face of the cover inside the cavity can be avoided, thus reducing secondary contamination of the cavity during disassembly and assembly. Attached Figure Description

[0033] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the drawings used in the description of the embodiments of this disclosure or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this specification. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 A front view of a wafer etching apparatus according to an embodiment of the present disclosure is shown;

[0035] Figure 2 A top view of a wafer etching apparatus according to an embodiment of the present disclosure is shown;

[0036] Figure 3 A cross-sectional schematic diagram of a wafer etching apparatus according to an embodiment of the present disclosure is shown.

[0037] Figure label:

[0038] Cavity 100, chamber 110, base 120;

[0039] 200 cap, 210 lifting component, 220 handle, 230 air supply pipe, 240 nozzle, 250 exhaust pipe, 260 drive component;

[0040] Wafer 300. Detailed Implementation

[0041] As is known from the background technology, in the plasma etching process, the yield of wafer etched products is related to the etching environment, and therefore the chambers in the wafer etching equipment need to be maintained regularly.

[0042] In some embodiments, the wafer etching apparatus has a cavity and a cover. The cavity has a chamber and a maintenance port. The chamber is used as a chamber for the wafer plasma etching process. The chamber is connected to the outside through the maintenance port. The cover is located at the maintenance port and is used to block the maintenance port during the etching process. A lifting component is fixedly connected to the cover.

[0043] The steps for maintaining the etching apparatus include: connecting the lifting device to the lifting component, wherein the lifting device moves the cover away from the maintenance port through the lifting component and exposes the maintenance port so that maintenance tools can enter the chamber through the maintenance port for maintenance, and after maintenance is completed, the cover is moved back to the maintenance port to seal the maintenance port.

[0044] The inventors discovered during their work that the lifting device has a limited lifting distance during movement. After the cover is removed from the maintenance port, it still needs to be manually moved, for example by lifting it by hand, to place the cover in a safe area. However, lifting by hand can easily cause direct contact between the cover and the end face of the cover inside the cavity, resulting in secondary contamination of the cavity.

[0045] To address the aforementioned technical problems, in this embodiment, the cavity has a chamber and a maintenance port. The maintenance port communicates with the chamber, and a cover is located at the maintenance port to seal it. The cover is detachably connected to the cavity. When maintaining the chamber, the cover can be removed from the maintenance port to expose it, allowing maintenance tools to enter the chamber for maintenance via the maintenance port. A handle is fixed to the first end face of the cover away from the chamber. By gripping the handle and moving the cover to a safe area, direct contact between the hand and the end face of the cover inside the chamber can be avoided, thus reducing secondary contamination of the chamber during disassembly and assembly.

[0046] To make the above-mentioned objectives, features and beneficial effects of this disclosure more apparent and understandable, specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings.

[0047] Reference Figures 1 to 3 ,in, Figure 1 A front view of a wafer 300 etching apparatus according to an embodiment of the present disclosure is shown. Figure 2 A top view of a wafer 300 etching apparatus according to an embodiment of the present disclosure is shown. Figure 3 A cross-sectional schematic diagram of a wafer 300 etching apparatus according to an embodiment of the present disclosure is shown.

[0048] Continue to refer to Figures 1 to 3 The wafer 300 etching apparatus may include a cavity 100 and a base 120.

[0049] Specifically, the cavity 100 is a shell structure with a chamber 110, and the base 120 is located inside the chamber 110. When performing a plasma etching process on the wafer 300, the wafer 300 is placed on the base 120, and the chamber 110 is used to provide a process environment for the plasma etching process on the wafer 300.

[0050] In some embodiments, the cavity 100 may also have a maintenance port (not shown).

[0051] Specifically, the maintenance port is located on the cavity 100 (as a non-limiting example, the maintenance port is located on the top of the cavity 100) and communicates with the chamber 110. The maintenance port is used to provide a channel for maintenance tools to enter and exit the chamber 110 during subsequent maintenance.

[0052] In some embodiments, the wafer 300 etching apparatus may further include a cap 200.

[0053] Specifically, the cover 200 is located at the maintenance port of the cavity 100, and the outer edge dimension of the cover 200 is adapted to the inner diameter dimension of the maintenance port so that the cover 200 can block the maintenance port.

[0054] In some embodiments, the cover 200 is detachably connected to the cavity 100. For example, the cover 200 may be flanged to the cavity 100. For example, the cover 200 may be threaded to the cavity 100.

[0055] In practical use, by setting the cover 200 to be detachably connected to the cavity 100, the cover 200 can be removed from the maintenance port when maintaining the cavity 110, so as to expose the maintenance port and allow maintenance tools to enter the cavity 110 for maintenance through the maintenance port.

[0056] In some embodiments, the wafer 300 etching apparatus may further include a lifting member 210.

[0057] Specifically, the lifting component 210 has a ring-shaped structure and is used to provide a connection position for the connection between the lifting device (not shown in the figure) and the cover 200.

[0058] In some embodiments, the lifting member 210 may be fixed to the first end face of the cover 200. For example, the lifting member 210 may be welded to the cover 200, which can improve the connection strength and stability between the lifting member 210 and the cover 200. For example, the lifting member 210 may be fixed to the flange of the cover 200, which facilitates the replacement of the lifting member 210 and reduces costs. The first end face of the cover 200 is the end face of the cover 200 away from the chamber 110.

[0059] In some embodiments, the cover 200 may be an axisymmetric structure (as a non-limiting example, the cross-section of the cover 200 may be circular), and the lifting member 210 is located on the central axis of the cover 200, which can reduce the tilt angle generated by the cover 200 when the lifting device lifts and lowers the cover 200.

[0060] In some embodiments, the wafer 300 etching apparatus may further include a handle 220.

[0061] Specifically, the handle 220 is located on the first end face of the cover 200 and is used for gripping when the cover 200 is moved manually. By gripping the handle 220 to move the cover 200 to a safe area, direct contact between the hand and the end face of the cover 200 located in the chamber 110 can be avoided, thus reducing the degree of secondary contamination to the chamber 110.

[0062] In some embodiments, the handle 220 is fixedly disposed with the cover 200. For example, the handle 220 can be welded to the cover 200, which can improve the connection strength and stability between the handle 220 and the cover 200. For example, the handle 220 can be fixed to the flange of the cover 200, which facilitates the replacement of the handle 220 and reduces costs.

[0063] In some embodiments, the handle 220 may have various shapes. For example, the handle 220 may be inverted U-shaped, wherein both ends of the inverted U-shaped handle 220 are respectively connected to the flange of the cover 200. For example, the handle 220 may be rectangular, wherein one side of the rectangular handle 220 is welded and fixed to the cover 200.

[0064] In some embodiments, the number of handles 220 can be multiple, for example, two.

[0065] In practical use, multiple handles 220 can provide multiple grip positions. On the one hand, it allows users to adjust the grip according to multiple needs, adapt to different directions and angles of movement, and improve the flexibility of operation. On the other hand, it can distribute the force borne by a single handle 220, and improve the stability and safety of the cover 200 during movement.

[0066] In some embodiments, a plurality of handles 220 may be distributed circumferentially on the first end face of the cover 200. For example, a plurality of handles 220 may be evenly arrayed circumferentially on the first end face of the cover 200. For example, a plurality of handles 220 may be non-uniformly distributed circumferentially on the first end face of the cover 200.

[0067] In some embodiments, the wafer 300 etching apparatus has at least one set of handles 220, for example, one set.

[0068] Specifically, a set of handles 220 is a combination of two handles 220 symmetrically arranged with the central axis of the cover 200 as the axis. During use, holding the handles 220 in a set can improve the uniformity of force on each handle 220 when moving. The lifting member 210 is clamped between the two handles 220 of the set of handles 220.

[0069] In some embodiments, the wafer 300 etching apparatus may further include a gas supply component.

[0070] Specifically, the gas supply component is disposed on the cover 200 to provide a channel for supplying gas into the chamber 110.

[0071] In some embodiments, the process gas may include at least one of a precursor, a reactant, a purge gas, or a cleaning gas. The precursor may be a gas containing, for example, silane (SiH4) or a metal compound; the reactant may be a gas containing, for example, an oxidizing agent or a nitriding agent; the purge gas may be a gas containing, for example, helium or argon; and the cleaning gas may be a gas containing, for example, nitrogen trifluoride (NF3).

[0072] In some embodiments, the air supply assembly may include an air supply pipe 230 and a nozzle 240.

[0073] Specifically, the first end of the gas supply pipe 230 is connected to the gas supply device (not shown in the figure), the second end of the gas supply pipe 230 is connected to the first end of the nozzle 240, the nozzle 240 is disposed on the cover 200, and the second end of the nozzle 240 is located in the chamber 110. The process gas provided by the gas supply device is suitable for entering the chamber 110 through the gas supply pipe 230 and the nozzle 240.

[0074] In some embodiments, the number of air supply pipes 230 may be multiple.

[0075] Specifically, each gas supply pipe 230 is connected to the nozzle 240, and the first end of each gas supply pipe 230 is connected to a different gas supply device, which is suitable for providing different process gases.

[0076] In some embodiments, the wafer 300 etching apparatus may further include an venting assembly.

[0077] Specifically, the exhaust assembly is disposed on the cavity 100 and communicates with the chamber 110, and is used to provide an exhaust channel for discharging the exhaust gas after the relevant process is completed in the chamber 110.

[0078] In some embodiments, the exhaust assembly may include an exhaust pipe 250.

[0079] Specifically, the first end of the exhaust pipe 250 is connected to the chamber 110, and the connection position with the cavity 100 is located below the base 120. The second end of the exhaust pipe 250 is connected to the waste gas treatment equipment (not shown in the figure). The waste gas after the relevant process is completed in the chamber 110 is suitable to leave the chamber 110 through the exhaust pipe 250.

[0080] In some embodiments, the exhaust assembly may further include a monitoring element (not shown in the figure).

[0081] Specifically, the monitoring element (as a non-limiting example, the monitoring element may be a gas sensor) is disposed on the exhaust pipe 250 for monitoring the composition of the exhaust gas in the exhaust pipe 250 and emitting a monitoring signal, wherein the monitoring signal is used to characterize the monitoring result.

[0082] In some embodiments, the number of monitoring devices can be multiple.

[0083] Specifically, multiple monitoring devices can acquire multiple monitoring signals. Compared to the monitoring signal from a single monitoring device, the final analysis result obtained by combining the monitoring signals from all monitoring devices will have higher accuracy.

[0084] In some embodiments, at least two types of monitoring devices are present among the plurality of monitoring devices.

[0085] Specifically, different types of monitoring devices have different sensitivities to different types of exhaust gases. For example, the monitoring devices may include a first monitoring device and a second monitoring device, wherein the first monitoring device may only sense the precursor, and the second monitoring device may only sense the purge gas.

[0086] In some embodiments, the exhaust assembly may further include a drive element 260.

[0087] Specifically, the drive element 260 (as a non-limiting example, the drive element 260 may be a turbo pump) is disposed on the exhaust pipe 250 for adjusting the exhaust flow rate and exhaust pressure of the exhaust gas discharged through the exhaust pipe 250.

[0088] In some embodiments, the wafer 300 etching apparatus may further include a controller (not shown in the figure).

[0089] Specifically, the controller is coupled to the monitoring device and the drive device 260 respectively, and is adapted to receive the monitoring signal emitted by the monitoring device, and output a control signal to the drive device 260 according to the monitoring signal, so as to adjust the exhaust flow rate and exhaust pressure of the exhaust gas discharged through the exhaust pipe 250.

[0090] In some embodiments, the controller may include at least one of an integrated circuit with processing capabilities, or a processor. For example, the processor may be a central processing unit (CPU), a microprocessor, or a field-programmable gate array (FPGA).

[0091] In some embodiments, the base 120 has a placement area (not shown) for placing a wafer 300, wherein the position of the placement area corresponds to the position of the gas supply assembly, for example, the placement area is coaxially arranged with the position of the nozzle 240 of the gas supply assembly.

[0092] In some embodiments, the number of placement areas can be at least one, wherein the number of placement areas corresponds to the number of gas supply components, and one placement area corresponds to one gas supply component. For example, the number of placement areas can be two, and correspondingly, the number of gas supply components can also be two, with one placement area corresponding to one gas supply component.

[0093] In some embodiments, the number of exhaust assemblies can be multiple.

[0094] It is understood that in the description of this application, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0095] It is understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0096] It is understood that, in this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0097] It is understood that, in this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0098] Understandably, when a component is described as "fixed to" or "set on" another component, it can be directly on the other component or there may be an intervening component. When a component is described as "connected to" another component, it can be directly connected to the other component or there may be an intervening component.

[0099] It is understandable that the term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this article indicates that the preceding and following related objects have an "or" relationship.

[0100] It is understood that the foregoing description of multiple embodiments provided by this disclosure allows for the combination and cross-referencing of various optional methods described in each embodiment without conflict, thereby extending to various possible embodiments. These can all be considered as embodiments disclosed in this disclosure. Although the embodiments of this disclosure are as described above, this disclosure is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope defined in the claims.

Claims

1. A wafer etching apparatus, characterized in that, include: The cavity has a chamber and a maintenance port, the maintenance port being connected to the chamber and providing a passage for maintenance tools to enter and exit the chamber; A base, located within the cavity, is used to support the wafer; A cover, located at the maintenance port and detachably connected to the cavity, is used to block the maintenance port; A handle is fixed to the first end face of the cover away from the chamber, for providing a gripping position.

2. The wafer etching apparatus according to claim 1, characterized in that, The number of handles is multiple, and the multiple handles are distributed along the circumference of the cover on the first end face of the cover.

3. The wafer etching apparatus according to claim 1, characterized in that, The number of handles is multiple, with two handles forming a group of handles, and the two handles in a group of handles are symmetrically arranged with the central axis of the cover as the axis.

4. The wafer etching apparatus according to claim 1, characterized in that, Also includes: A lifting component is fixed to the first end face of the cover and located at the central axis of the cover.

5. The wafer etching apparatus according to claim 1, characterized in that, Also includes: Gas supply equipment, used to provide process gases; Gas supply assembly, the gas supply assembly comprising: A gas supply pipe, the first end of which is connected to the gas supply equipment; The nozzle has a first end connected to the second end of the air supply pipe, the nozzle is disposed on the cover, and the second end of the nozzle is located in the cavity.

6. The wafer etching apparatus according to claim 5, characterized in that, There are multiple gas supply pipes, each connected to the nozzle. The first end of each gas supply pipe is connected to a different gas supply device, which is used to provide different process gases.

7. The wafer etching apparatus according to claim 5, characterized in that, The base has multiple placement areas for placing wafers; The number of gas supply components is multiple, and each gas supply component corresponds to a placement area.

8. The wafer etching apparatus according to claim 1, characterized in that, Also includes: Waste gas treatment equipment is used to treat waste gas after the process. Exhaust assembly, the exhaust assembly comprising: An exhaust pipe, the first end of which is connected to the chamber and the connection point of which is located below the base, and the second end of which is connected to the waste gas treatment equipment; A drive unit, disposed on the exhaust pipe, is used to adjust the exhaust flow rate and exhaust pressure of the exhaust gas discharged through the exhaust pipe.

9. The wafer etching apparatus according to claim 8, characterized in that, The exhaust assembly also includes: A monitoring device is installed on the exhaust pipe to monitor the composition of the exhaust gas in the exhaust pipe and send a monitoring signal. The controller is coupled to the monitoring device and the driving device respectively, and is used to receive the monitoring signal emitted by the monitoring device and output the control signal to the driving device according to the monitoring signal, so as to adjust the exhaust flow rate and exhaust pressure of the exhaust gas discharged through the exhaust pipe.

10. The wafer etching apparatus according to claim 9, characterized in that, The number of monitoring devices is multiple, and at least two types of monitoring devices exist among the multiple monitoring devices, wherein the different types of monitoring devices sense different types of exhaust gas.

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