Etching apparatus
The atomized etching device achieves protection and cost reduction for three-dimensional structures with high aspect ratios, solving the problems of high etching cost and structural damage in existing wet etching technology. It is suitable for etching small-sized, highly complex three-dimensional graphics.
Patent Information
- Application Number
- CN202520047622.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-09
- Publication Date
- 2026-01-27
- Estimated Expiration
- 2035-01-09
AI Technical Summary
Existing wet etching techniques are difficult to effectively control three-dimensional structures with high aspect ratios, resulting in damage to the substrate surface and high costs.
An atomized etching device is used, which uses atomized chemicals in the atomized etching chamber to contact the substrate surface and form a gas saturation space. This ensures that the chemicals are uniformly contacted with the substrate surface, reduces damage to the three-dimensional structure, and lowers chemical consumption.
It improves the etching yield of three-dimensional structures, reduces etching costs, and is suitable for etching small-sized, highly complex three-dimensional patterns.
Smart Images
Figure CN223844220U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor technology, and in particular to an etching apparatus. Background Technology
[0002] In semiconductor fabrication, wet etching is commonly used to remove material from the surface of semiconductor substrates. Current wet etching methods typically achieve material removal by immersing the substrate in chemicals.
[0003] The surface texture produced by this etching method is not ideal, and the minimum line of the etched pattern is difficult to control. With the continuous development of semiconductor manufacturing and the limitations of Moore's Law, planar structures are gradually evolving into three-dimensional structures. Therefore, traditional immersion etching methods face challenges in terms of dimensional and aspect ratio limits. For structures with high aspect ratio requirements, immersion etching, due to the surface tension of liquid chemicals and the difficulty in controlling the minimum line of immersion etching, can easily cause the three-dimensional structure on the substrate surface to collapse, leading to substrate damage.
[0004] Meanwhile, the immersion etching method requires repeated immersion, and the etching process consumes a large amount of chemicals, resulting in high etching costs.
[0005] Therefore, based on the above technical problems, there is a need for an etching device that minimizes damage to three-dimensional structures with high aspect ratios, ensures a good etched surface, and reduces etching costs. Utility Model Content
[0006] The purpose of this invention is to provide an etching device that minimizes damage to three-dimensional structures with a high aspect ratio, ensures a good etched surface, and reduces etching costs.
[0007] This utility model provides an etching device, including: a housing, a homogenizing component, a substrate support, and a feeding unit;
[0008] The housing has an atomizing etching chamber, the substrate support is disposed in the atomizing etching chamber, and the substrate support has a bearing surface;
[0009] The homogenizing element is disposed on the housing, and the homogenizing element has a plurality of homogenizing holes. The outlet of the homogenizing hole is connected to the atomizing etching chamber, and the feeding unit is used to feed atomized chemicals into the inlet of the homogenizing hole.
[0010] Optionally, the housing is provided with a plurality of exhaust ports communicating with the atomizing etching chamber, and each exhaust port is arranged around the substrate stage.
[0011] Optionally, each of the homogenizing holes points towards the bearing surface in a direction perpendicular to the bearing surface.
[0012] Optionally, when an exhaust port is provided on the housing;
[0013] Along a direction perpendicular to the bearing surface, the exhaust port and the homogenizing member are respectively disposed on both sides of the bearing surface.
[0014] Optionally, the feeding unit includes a feeding assembly, the feeding assembly includes a feeding body, the feeding body has a feeding chamber, the feeding body is provided with a liquid inlet, an air inlet and an atomization outlet communicating with the feeding chamber, and the atomization outlet is communicating with at least a portion of the homogenization holes.
[0015] Optionally, the feeding unit includes a plurality of feeding components, and the atomization outlet of each feeding component is connected to a portion of the homogenization holes.
[0016] Optionally, each of the homogenizing holes is arranged around a central axis, which passes through and is perpendicular to the bearing surface;
[0017] The homogenizing holes are arranged in several rings around the central axis, with the circumferential distance between adjacent homogenizing holes in each ring being the same, and / or the homogenizing holes in adjacent rings being staggered along the circumferential direction.
[0018] Optionally, the housing is provided with a plurality of atomizing etching chambers, and each atomizing etching chamber is equipped with at least one homogenizing element, at least one substrate support, and at least one feeding unit.
[0019] Optionally, the housing may also contain multiple conventional etching cavities.
[0020] Optionally, a conveying channel is provided inside the housing, and each of the atomizing etching chambers and each of the ordinary etching chambers are respectively located on both sides of the conveying channel.
[0021] With this configuration, the etching apparatus introduces atomized chemicals into the corresponding atomized etching chamber, creating a gas-saturated space within the chamber. This ensures uniform contact between the chemicals and the three-dimensional structure of the substrate surface, thus meeting etching requirements under extreme size or aspect ratio conditions. During etching, most of the chemicals contact the substrate surface in the form of gaseous or micro-droplets, eliminating or reducing the forces exerted on the micro-three-dimensional structures on the substrate surface during liquid immersion. This mitigates the tendency for the three-dimensional structures to collapse, increasing the substrate etching yield. Furthermore, this method of contacting the substrate with atomized chemicals is suitable for etching small-sized, highly complex three-dimensional graphics, offering a wide range of applications. Moreover, etching via atomization results in higher chemical utilization efficiency; the overall amount of chemicals consumed during etching is lower than with traditional methods, helping to reduce etching material costs. Attached Figure Description
[0022] Figure 1This is a schematic diagram of the etching apparatus according to an embodiment of the present invention;
[0023] Figure 2 This is a partial structural schematic diagram of an etching apparatus according to an embodiment of the present invention;
[0024] Figure 3 This is a schematic diagram of the structure of the homogenizing component according to an embodiment of the present invention;
[0025] Figure 4 This is a schematic diagram of the structure of a feeding assembly according to an embodiment of the present invention;
[0026] Figure 5 This is a schematic diagram of the connection structure between the feeding component and the homogenizing component according to an embodiment of the present invention.
[0027] In the attached diagram:
[0028] 10 - Shell;
[0029] 111-First atomizing etching chamber; 112-Second atomizing etching chamber; 113-Third atomizing etching chamber; 114-Fourth atomizing etching chamber; 115-Fifth atomizing etching chamber;
[0030] 12 - Exhaust port;
[0031] 131 - First ordinary etching chamber; 132 - Second ordinary etching chamber; 133 - Third ordinary etching chamber; 134 - Fourth ordinary etching chamber; 135 - Fifth ordinary etching chamber;
[0032] 14-Transmission Channel;
[0033] 15 - Teleportation Space;
[0034] 20 - Homogenizing component; 21 - Homogenizing hole;
[0035] 30-Slab support platform; 301-Bearing surface; 31-Support component;
[0036] 40 - Feeding unit; 41 - Feeding assembly; 411 - Feeding body; 412 - Liquid inlet; 413 - Air inlet; 414 - Pipeline;
[0037] 50-substrate cassette;
[0038] 100-substrate;
[0039] a-Reference line. Detailed Implementation
[0040] The etching apparatus proposed in this utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this utility model will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of this utility model.
[0041] As used in this invention, the singular forms “a,” “an,” and “the” include plural objects; the term “or” is generally used to mean “and / or”; the term “a number” is generally used to mean “at least one”; and the terms “at least two” or “more than” are generally used to mean “two or more”. Furthermore, the terms “first,” “second,” and “third” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with “first,” “second,” or “third” may explicitly or implicitly include one or at least two of that feature. Furthermore, the terms "installed," "connected," and "attached," as used in this utility model, and the term "set" on one element from another, should be interpreted broadly. They generally only indicate a connection, coupling, cooperation, or transmission relationship between the two elements, which can be direct or indirect through an intermediate element. They should not be construed as indicating or implying a spatial positional relationship between the two elements, meaning one element can be located inside, outside, above, below, or to one side of the other element, unless otherwise explicitly stated. Those skilled in the art can understand the specific meaning of these terms in this utility model according to the specific circumstances. Additionally, directional terms such as above, below, up, down, upward, downward, left, and right are used relative to exemplary embodiments as shown in the figures, with upward or up direction pointing towards the top of the corresponding figure, and downward or down direction pointing towards the bottom of the corresponding figure.
[0042] This embodiment provides an etching apparatus, including: a housing 10, a homogenizing element 20, a substrate 30, and a feeding unit 40;
[0043] Combination Figure 1 As shown, the housing 10 has atomizing etching chambers. In this embodiment, the housing 10 has a cuboid structure and integrates five atomizing etching chambers, namely the first atomizing etching chamber 111, the second atomizing etching chamber 112, the third atomizing etching chamber 113, the fourth atomizing etching chamber 114, and the fifth atomizing etching chamber 115. Each atomizing etching chamber is equipped with a homogenizing element 20, a substrate support 30, and a feeding unit 40.
[0044] In this embodiment, the structure and configuration of each of the aforementioned atomizing etching chambers are identical. In this embodiment, the structure and configuration of the first atomizing etching chamber 111 are described as an example. (Combined with...) Figure 2 As shown, a substrate support stage 30 is provided in the first atomizing etching chamber 111. The substrate support stage 30 has a bearing surface 301 for supporting the substrate 100 to be etched. The bottom of the substrate support stage 30 is supported by a support member 31, which can be connected to the bottom of the first atomizing etching chamber 111. The upper surface of the substrate support stage 30 serves as the bearing surface 301, and a certain distance is maintained between the bearing surface 301 and the top of the first atomizing etching chamber 111. The substrate support stage 30 can also employ an electrostatic adsorption structure similar to an existing electrostatic chuck to achieve adsorption and fixation of the substrate supported thereon.
[0045] The first atomizing etching chamber 111 is equipped with an inlet, which is disposed on the housing 10 and extends through the top of the first atomizing etching chamber 111. The homogenizing element 20 is disposed in the inlet and is used to homogenize the atomized chemicals before introducing them into the first atomizing etching chamber 111.
[0046] The homogenizing element 20 has multiple homogenizing holes 21, the outlet of which is connected to the first atomizing etching chamber 111. The feeding unit 40 is used to feed atomized chemicals into the inlet of the homogenizing holes 21. The arrangement of multiple homogenizing holes 21 facilitates the uniform distribution of atomized chemicals entering the first atomizing etching chamber 111, thereby ensuring a better etching effect.
[0047] The aforementioned etching apparatus introduces atomized chemicals into corresponding atomized etching chambers, creating a gas-saturated space within these chambers. This ensures uniform contact between the chemicals and the three-dimensional structure of the substrate surface, thereby meeting etching requirements under extreme size or aspect ratio conditions. During etching, the chemicals mostly contact the substrate surface in gaseous or micro-droplet form, eliminating or reducing the forces exerted on the micro-three-dimensional structures on the substrate surface during liquid immersion. This mitigates the tendency for the three-dimensional structures to collapse, increasing the substrate etching yield. Furthermore, this method of contacting the substrate with atomized chemicals is suitable for etching small-sized, highly complex three-dimensional graphics, offering a wide range of applications. Moreover, etching via atomized contact results in higher chemical utilization efficiency; the overall amount of chemicals consumed during etching is lower than with traditional methods, helping to reduce etching material costs.
[0048] In this embodiment, the homogenization hole 21 is in Figure 2 The homogenizing hole 21 is vertically oriented (not shown in the figure), so it points vertically to the bearing surface 301. The atomized chemical introduced through the homogenizing hole 21 can flow vertically to the upper surface of the substrate 100 on the bearing surface 301, which can ensure that the atomized chemical contacts the upper surface of the substrate 100 at the first time.
[0049] In other alternative embodiments, the opening direction of the homogenizing hole 21 can be flexibly adjusted based on etching requirements, for example, the homogenizing hole 21 can be made to point obliquely toward the bearing surface 301.
[0050] Combination Figure 3 As shown, in this embodiment, the homogenizing holes 21 are all circular holes, and the homogenizing holes 21 are densely arranged on the homogenizing element 20 to ensure uniform distribution of the incoming atomized chemicals. In other alternative embodiments, the opening shape of the homogenizing holes 21 can also be set as a rectangular hole or other shapes, and the opening shape of the homogenizing holes 21 can be flexibly adjusted based on actual etching requirements.
[0051] Combination Figure 2 As shown, in this embodiment, the first atomizing etching cavity 111 is cylindrical in shape, and its central axis extends vertically. The substrate support 30 is disc-shaped and coaxially arranged with the first atomizing etching cavity 111. The homogenizing element 20 is also disc-shaped and coaxially arranged with the substrate support 30, so that the introduced atomized chemicals are evenly distributed on the bearing surface 301. This structure is applicable to the etching of existing circular substrates. The outer diameter of the substrate support 30 is larger than the outer diameter of the substrate 100 supported on it, and the outer diameter of the substrate support 30 is smaller than the inner diameter of the first atomizing etching cavity 111. Therefore, there is an annular gap between the outer peripheral surface of the substrate support 30 and the inner peripheral surface of the first atomizing etching cavity 111.
[0052] In other alternative embodiments, the shape of the first atomizing etching chamber 111 and the shape of the substrate stage 30 can be adaptively adjusted based on etching requirements and the shape of the substrate being etched.
[0053] Please continue to refer to this. Figure 2 As shown, the housing 10 is provided with a plurality of exhaust ports 12, each exhaust port 12 communicating with the first atomizing etching chamber 111 to discharge the atomized chemicals inside the first atomizing etching chamber 111. Each exhaust port 12 is arranged around the substrate support 30. Preferably, each exhaust port 12 is circumferentially and uniformly arranged around the central axis of the substrate support 30 (or the central axis of the first atomizing etching chamber 111). This ensures that the atomized chemicals inside the first atomizing etching chamber 111 are discharged uniformly circumferentially, which is beneficial for the uniform circumferential distribution of the atomized chemicals within the first atomizing etching chamber 111, thus ensuring uniform substrate etching.
[0054] Furthermore, along a direction perpendicular to the bearing surface 301, the exhaust port 12 and the homogenizing member 20 are respectively disposed on both sides of the bearing surface 301. Figure 2As shown, the homogenizing element 20 is located above the bearing surface 301, and the homogenizing hole 21 faces downwards directly towards the bearing surface 301. The exhaust port 12 is located below the bearing surface 301. After the atomized chemical introduced through the homogenizing hole 21 comes into contact with the upper surface of the substrate 100 on the bearing surface 301, it diffuses outwards along the substrate 100 and reacts uniformly with the substrate 100. Then, the atomized chemical flows to the periphery of the substrate stage 30 and flows downwards, and is uniformly discharged circumferentially through multiple exhaust ports 12. The arrangement of the multiple exhaust ports 12 helps to guide the flow of the introduced atomized chemical and makes the atomized chemical uniformly distributed in the first atomization etching chamber 111.
[0055] Please refer to Figure 3 As shown, each of the homogenizing holes 21 is arranged around a reference line a, which passes through and is perpendicular to the bearing surface 301.
[0056] In this embodiment, reference line a is collinear with the central axis of homogenizer 20 itself, and also with the central axis of the first atomizing etching cavity 111 and the central axis of the substrate 30.
[0057] Combination Figure 3 As shown, a homogenizing hole 21 is provided on the homogenizing component 20 through the reference line a, and other homogenizing holes 21 are arranged in several loops around the reference line a, with the circumferential distance between adjacent homogenizing holes 21 in each loop being the same.
[0058] In each ring, the distance between adjacent homogenizing holes 21 is approximately xR, where x is a constant and R is the radius of the area to be sprayed by the homogenizing element 20. Therefore, in each ring, the number of homogenizing holes 21 is 2πr / xR.
[0059] The constant x is determined based on the aperture size of the homogenizing holes 21 and the radius of the area to be sprayed by the homogenizing component 20. Overall, the homogenizing holes 21 are distributed radially, expanding outward in concentric circles, and the arrangement of the holes is adjusted according to the user's flow rate.
[0060] The above-mentioned homogenization hole 21 setting method can make the atomized chemical distribution more uniform.
[0061] Please continue to refer to this. Figure 3 As shown, the homogenizing holes 21 in adjacent rings are staggered along the circumferential direction. This makes the homogenizing holes 21 in adjacent rings complementary, further improving the uniformity of chemical distribution.
[0062] In other alternative embodiments, the arrangement of the homogenizing holes 21 can be set based on the homogenization requirements. For example, for areas with lower chemical concentration requirements, the homogenizing holes 21 can be arranged more sparsely, while for areas with higher chemical concentration requirements, the homogenizing holes 21 can be arranged more densely.
[0063] Please refer to Figure 2 , Figure 4 and Figure 5 As shown, the feeding unit 40 includes a plurality of feeding components 41, and the atomization outlet of each feeding component 41 is connected to a portion of the homogenization holes 21.
[0064] The feeding assembly 41 includes a feeding body 411, which has a feeding chamber (not shown in the figure). The feeding body 411 is provided with a liquid inlet 412, an air inlet 413, and an atomization outlet communicating with the feeding chamber. The liquid inlet 412 and the atomization outlet are arranged opposite to each other, and the opening direction of the air inlet 413 is perpendicular to the direction of the liquid inlet 412, so as to form turbulence in the feeding chamber. The liquid introduced through the liquid inlet 412 mixes with the gas introduced through the air inlet 413 and is discharged through the atomization outlet to form an atomized state. The atomization outlet can be circular or elliptical, and its specific shape can be adjusted according to actual atomization requirements. The atomization outlet communicates with at least a portion of the homogenization holes 21.
[0065] The liquid inlet 412 is used to introduce liquid chemicals into the feeding chamber, and the air inlet 413 is used to introduce high-pressure inert gas into the feeding chamber. The inert gas and liquid chemicals are mixed and atomized, and then sprayed out through the atomization outlet. After atomization, the gas is then introduced into the first atomization etching chamber 111 through the homogenization hole 21. The size of the homogenization hole 21 is also set to help atomize the chemicals.
[0066] Combination Figure 2 As shown, in this embodiment, six feeding components 41 are provided, and the inlet of each feeding component 41 can be connected to different chemical supply pipelines. Based on etching requirements, the required feeding component 41 can be selected to supply the corresponding atomized chemicals into the first atomizing etching chamber 111. In other alternative embodiments, the specific number of feeding components 41 can be flexibly adjusted based on actual usage requirements.
[0067] Combination Figure 5 As shown, in this embodiment, the atomization outlet of the feeding component 41 is connected to the corresponding homogenization hole 21 through several pipes 414. Therefore, each feeding component 41 can selectively connect to the corresponding homogenization hole 21. All homogenization holes 21 on the homogenizing component 20 are divided into six parts and are respectively connected to the atomization outlet of the six feeding components 41. That is, the homogenization holes 21 connected to each feeding component 41 do not overlap. At this time, each feeding component 41 has a dedicated homogenization hole 21, so that the homogenization hole 21 only delivers dedicated chemicals, which can effectively prevent crystallization caused by different chemicals coming into contact due to the sharing of homogenization holes.
[0068] In other alternative embodiments, the feeding assembly 41 can also be disposed in an atomizing chamber, and the homogenizing element 20 is installed at the outlet of the atomizing chamber. The feeding assembly 41 atomizes the chemicals and sprays them into the atomizing chamber, and then injects them into the first atomizing etching chamber 111 through the homogenizing element 20 to achieve the homogenization effect of the chemicals. Preferably, the homogenizing element 20 is used for one feeding assembly 41, that is, one homogenizing element 20 is used for a specific chemical. In this case, each atomizing etching chamber is equipped with one feeding assembly, and each feeding assembly supplies a specific chemical to meet different etching requirements.
[0069] In other alternative embodiments, the feeding assembly 41 may employ other known atomization structures, such as ultrasonic atomization or vortex atomization.
[0070] In the above embodiments, an atomizing etching chamber is equipped with a homogenizing element 20, a substrate support stage 30, and a feeding unit 40. In other alternative embodiments, an atomizing etching chamber may be equipped with multiple homogenizing elements 20, multiple substrate support stages 30, and multiple feeding units 40 to meet the simultaneous etching of multiple substrates in the same atomizing etching chamber. The number of homogenizing elements 20, substrate support stages 30, and feeding units 40 equipped in an atomizing etching chamber can be flexibly adjusted based on actual usage requirements.
[0071] Please continue to refer to this. Figure 1 As shown in this embodiment, the housing 10 is also provided with five ordinary etching chambers, namely the first ordinary etching chamber 131, the second ordinary etching chamber 132, the third ordinary etching chamber 133, the fourth ordinary etching chamber 134 and the fifth ordinary etching chamber 135. The ordinary etching chambers can be used for conventional etching. For example, the ordinary etching chambers can be provided with liquid injection pipes or spray pipes for immersion or spray etching. Their internal configuration can be consistent with the prior art, and will not be described in detail here.
[0072] The five ordinary etching chambers are arranged in a row, and the five atomizing etching chambers are arranged in a row. A conveying channel 14 is provided inside the housing 10, with the five ordinary etching chambers located on one side of the conveying channel 14 and the five atomizing etching chambers located on the other side of the conveying channel 14.
[0073] A closable conveyor door is provided between the conveyor channel 14 and each ordinary etching chamber and each atomized etching chamber to isolate the space between the conveyor channel 14 and each etching chamber.
[0074] In addition, multiple substrate cassettes 50 are arranged outside the housing 10, and a transfer space 15 is provided inside the housing 10 adjacent to the substrate cassettes 50. One end of the transfer channel 14 is connected to the transfer space 15. The substrates are taken out of the substrate cassettes 50 and placed into the transfer space 15 by the transfer device, and then transferred to the corresponding etching chamber through the transfer channel 14. The transfer device can use existing technology, which will not be described in detail here.
[0075] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.
[0076] The above description is only a description of the preferred embodiment of the present utility model and is not intended to limit the scope of the present utility model in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.
Claims
1. An etching apparatus, characterized in that, include: Housing, homogenizing component, sheet support platform, and feeding unit; The housing has an atomizing etching chamber, the substrate support is disposed in the atomizing etching chamber, and the substrate support has a bearing surface; The homogenizing element is disposed on the housing, and the homogenizing element has a plurality of homogenizing holes. The outlet of the homogenizing hole is connected to the atomizing etching chamber, and the feeding unit is used to feed atomized chemicals into the inlet of the homogenizing hole.
2. The etching apparatus as described in claim 1, characterized in that, The housing is provided with multiple exhaust ports that communicate with the atomizing etching chamber, and each exhaust port is arranged around the substrate stage.
3. The etching apparatus as described in claim 1, characterized in that, Each of the homogenizing holes points towards the bearing surface.
4. The etching apparatus as described in claim 2, characterized in that, Along a direction perpendicular to the bearing surface, the exhaust port and the homogenizing member are respectively disposed on both sides of the bearing surface.
5. The etching apparatus as claimed in claim 1, characterized in that, The feeding unit includes a feeding assembly, which includes a feeding body. The feeding body has a feeding chamber and is provided with a liquid inlet, an air inlet, and an atomization outlet that communicate with the feeding chamber. The atomization outlet communicates with at least a portion of the homogenization holes.
6. The etching apparatus as described in claim 5, characterized in that, The feeding unit includes multiple feeding components, and the atomization outlet of each feeding component is connected to a portion of the homogenization holes.
7. The etching apparatus as claimed in claim 1, characterized in that, Each of the homogenizing holes is arranged around a central axis, which passes through and is perpendicular to the bearing surface. The homogenizing holes are arranged in several rings around the central axis, with the circumferential distance between adjacent homogenizing holes in each ring being the same, and / or the homogenizing holes in adjacent rings being staggered along the circumferential direction.
8. The etching apparatus as claimed in claim 1, characterized in that, The housing is provided with multiple atomizing etching chambers, and each atomizing etching chamber is equipped with at least one homogenizing element, at least one substrate support, and at least one feeding unit.
9. The etching apparatus as claimed in claim 8, characterized in that, The housing also contains multiple conventional etching cavities.
10. The etching apparatus as claimed in claim 9, characterized in that, The housing is provided with a conveying channel, and each of the atomizing etching chambers and each of the ordinary etching chambers are respectively located on both sides of the conveying channel.