Crucible, crucible assembly and single crystal furnace

Abstract

The utility model discloses a crucible, a crucible assembly and a single crystal furnace, and belongs to the technical field of monocrystalline silicon preparation. The crucible comprises a bottom support part and a crucible body, the corner part is connected to the upper end of the bottom support part; the straight arm part is connected to the upper end of the corner part; wherein the straight arm part comprises a main body section and an upper edge section which are connected in the vertical direction, the inner side wall and the outer side wall of the main body section are straight walls extending in the vertical direction, the inner side wall of the upper edge section inclines inwards from top to bottom, and the orthographic projection of the main body section in the vertical direction covers the orthographic projection of the upper edge section in the vertical direction. By using the structure, the retention and accumulation of splashed silicon on the upper edge section are reduced, so that the risk that the splashed silicon falls into a solution in a subsequent process is reduced, the production quality of monocrystalline silicon is further improved, the risk that the upper edge section collapses after the crucible is heated is reduced, the structural stability of the crucible is enhanced, a mold does not need to be opened again, and the production cost is reduced. The manufacturing process is simplified, the production materials of the crucible are reduced, and the production cost is reduced.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of single crystal silicon production, and particularly relates to a crucible, a crucible assembly and a single crystal furnace. BACKGROUND

[0002] Single crystal silicon is an important component of semiconductor materials and is widely used in the fields of integrated circuits, solar cells and the like. In the production process of single crystal silicon, the Czochralski method is a commonly used manufacturing process. The process first loads solid silicon material into a crucible, melts the silicon material by heating in a vacuum or inert gas environment, and then goes through a series of process steps such as temperature adjustment, crystal pulling, shoulder growth, shoulder rotation, constant diameter and tailing, etc., to finally grow a single crystal silicon rod.

[0003] However, in the prior art, during the charging operation in the furnace, the splashed silicon is prone to stay on the upper edge of the crucible and is not easy to fall off. With the enrichment of single crystal silicon manufacturing raw materials, the proportion of small-diameter raw materials such as granular silicon, melon seed material or fine powder material used in the charging process is increasing, and these raw materials are more likely to be attached to the upper edge and inner wall of the crucible during the charging process due to the blowing of argon gas, resulting in an increase in the attachment of splashed silicon, silicon powder or silicon slag on the upper edge of the crucible. In addition, with the increase of the running time of the furnace table, the accumulation of these attachments on the upper edge of the crucible will cause them to fall into the silicon liquid during the process stages of shoulder growth, constant diameter, tailing, etc. in the single crystal silicon rod growth process, thereby causing the single crystal silicon rod to be broken by slag, and seriously affecting the quality of the single crystal silicon. CONTENT OF THE INVENTION

[0004] The present application aims to at least solve one of the technical problems existing in the prior art. To this end, the present application provides a crucible, a crucible assembly and a single crystal furnace, which reduces the residence and accumulation of splashed silicon on the upper edge section, and improves the production quality of single crystal silicon.

[0005] In a first aspect, the present application provides a crucible, comprising:

[0006] a bottom support part;

[0007] a corner part connected to the upper end of the bottom support part;

[0008] a straight arm part connected to the upper end of the corner part; wherein the straight arm part comprises a main body section and an upper edge section connected along the vertical direction, the inner side wall and the outer side wall of the main body section are straight walls extending along the vertical direction, the inner side wall of the upper edge section is inclined inward from top to bottom, and the vertical projection of the main body section covers the vertical projection of the upper edge section.

[0009] According to the crucible provided in the present application, by virtue of the inclined design of the inner sidewall of the upper edge section, the residence and accumulation of the splashed silicon on the upper edge section are reduced, thereby reducing the risk of the splashed silicon falling into the solution in the subsequent process, and further improving the production quality of the single crystal silicon. In combination with the structure design that the vertical projection of the main body section covers the vertical projection of the upper edge section, the risk of the collapse of the upper edge section of the crucible after being heated is significantly reduced, thereby enhancing the structural stability of the crucible, and without the need of re-opening the mold, the manufacturing process is simplified, the production materials of the crucible are reduced, and the production cost is reduced.

[0010] According to an embodiment of the present application, the height H1 of the upper edge section and the height H2 of the main body section satisfy: 15≤H2 / H1≤20.

[0011] According to an embodiment of the present application, the outer sidewall of the upper edge section is a straight wall extending in the vertical direction, and is in vertical abutment with the outer sidewall of the main body section.

[0012] According to an embodiment of the present application, the included angle α between the vertical section of the inner sidewall of the upper edge section and the vertical section of the outer sidewall of the upper edge section satisfies: 20°≤α≤30°.

[0013] According to an embodiment of the present application, the upper edge section further has an upper wall surface connected to the inner sidewall and the outer sidewall of the upper edge section respectively, and the vertical section of the upper wall surface of the upper edge section is an arc.

[0014] According to an embodiment of the present application, the vertical section of the upper wall surface of the upper edge section is tangent to the vertical section of the inner sidewall of the upper edge section, and the vertical section of the upper wall surface of the upper edge section is tangent to the vertical section of the outer sidewall of the upper edge section.

[0015] According to an embodiment of the present application, the connection position of the upper wall surface of the upper edge section and the inner sidewall of the upper edge section is higher than the connection position of the upper wall surface of the upper edge section and the outer sidewall of the upper edge section.

[0016] According to an embodiment of the present application, the bottom support portion is curved, and the curvature of the bottom support portion is different from the curvature of the corner portion.

[0017] In a second aspect, the present application provides a crucible assembly, which comprises:

[0018] The crucible as in any of the preceding items;

[0019] A supporting structure, wherein the crucible is arranged in the supporting structure.

[0020] According to the crucible assembly provided in the application, the residence and accumulation of the splashed silicon on the upper edge section are reduced, the risk of the splashed silicon falling into the solution in the subsequent process is reduced, and the production quality of the single crystal silicon is improved. In combination with the structure design that the vertical projection of the main body section covers the vertical projection of the upper edge section, the risk of the collapse of the upper edge section of the crucible after being heated is significantly reduced, the structural stability of the crucible is enhanced, the manufacturing process is simplified, the production materials of the crucible are reduced, and the production cost is reduced.

[0021] In a third aspect, the application provides a single crystal furnace, comprising:

[0022] a furnace body;

[0023] a crucible assembly as described above, arranged in the furnace body.

[0024] According to the single crystal furnace provided in the application, the residence and accumulation of the splashed silicon on the upper edge section are reduced, the risk of the splashed silicon falling into the solution in the subsequent process is reduced, and the production quality of the single crystal silicon is improved. In combination with the structure design that the vertical projection of the main body section covers the vertical projection of the upper edge section, the risk of the collapse of the upper edge section of the crucible after being heated is significantly reduced, the structural stability of the crucible is enhanced, the manufacturing process is simplified, the production materials of the crucible are reduced, and the production cost is reduced.

[0025] Additional aspects and advantages of the application will be in part apparent and in part pointed out hereinafter. BRIEF DESCRIPTION OF DRAWINGS

[0026] The above and / or additional aspects and advantages of the application will become apparent and be readily appreciated from the following description, including the appended drawings, wherein:

[0027] Figure 1 is a structural schematic diagram of a crucible provided by an embodiment of the application;

[0028] Figure 2 is a top view of the crucible provided by the embodiment of the application;

[0029] Figure 3 is a sectional view of A-A in Figure 2

[0030] Figure 4 is a structure enlarged view at B in Figure 3

[0031] Figure 5 is a structural schematic diagram of a crucible assembly provided by the embodiment of the application.

[0032] REFERENCE SIGNS:​​

[0033] Crucible assembly 1;

[0034] Crucible 10;

[0035] Base portion 11, corner portion 12;

[0036] Straight arm portion 13, main body segment 131, inner side wall 1311 of main body segment, outer side wall 1312 of main body segment, upper edge segment 132, inner side wall 1321 of upper edge segment, outer side wall 1322 of upper edge segment, upper wall surface 1323 of upper edge segment;

[0037] Support structure 20, crucible zone 21, crucible support 22. DETAILED DESCRIPTION

[0038] Embodiments of the present application are described below in detail, examples of which are shown in the drawings, wherein the same or similar notations represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only, and are for the purpose of explanation of the present application, and cannot be understood as a limitation of the present application.

[0039] The present application provides a crucible 10.

[0040] Reference is made below to Figures 1-5 The crucible 10 according to embodiments of the present application is described.

[0041] In some embodiments, as shown in Figures 1-3 The crucible 10 includes a base portion 11, a corner portion 12 and a straight arm portion 13.

[0042] As shown in Figure 3 and Figure 4 The corner portion 12 is connected to the upper end of the base portion 11; the straight arm portion 13 is connected to the upper end of the corner portion 12.

[0043] The crucible 10 can be made of quartz material or other high-temperature-resistant, corrosion-resistant and high-strength materials, which are not limited by the present application.

[0044] The base portion 11 serves as the support foundation of the entire crucible 10, for supporting the crucible 10 and placing solid silicon material. The base portion 11 can be designed as curved or flat, which is not limited by the present application.

[0045] As shown in Figure 1 The corner portion 12 can be designed as curved to play a role of transition and connection, specifically, the vertical cross-section of the corner portion 12 is circular arc-shaped. Specifically, the corner portion 12 not only enables the base portion 11 and the straight arm portion 13 to be smoothly connected, but also enhances the stability of the structure of the crucible 10 to a certain extent.

[0046] In actual design, the bending angle of the corner portion 12 is optimized to reduce the accumulation and residue of the material at the corner.

[0047] As shown in Figure 1 , the straight arm portion 13 can be designed as a cylinder for containing the molten silicon liquid, and specifically, the vertical section of the straight arm portion 13 is flat.

[0048] As shown in Figure 3 and Figure 4 , the straight arm portion 13 includes a main body segment 131 and an upper edge segment 132 connected in the vertical direction, the inner side wall 1311 and the outer side wall of the main body segment 131 are straight walls extending in the vertical direction, the inner side wall 1321 of the upper edge segment 132 is inclined inward from top to bottom, and the vertical projection of the main body segment 131 covers the vertical projection of the upper edge segment 132.

[0049] Therefore, on the basis of the existing structure, the inner side wall 1321 of the upper edge segment 132 of the straight arm portion 13 is designed as an inclined surface with a certain slope, and the main body segment 131 of the straight wall portion continues the original straight wall structure design. In this case, during the single crystal silicon manufacturing process, when the splashed silicon is generated and attached to the upper edge segment 132, due to the existence of the inclination angle, under the action of gravity, the splashed silicon has a tendency to slide downward. In addition, under the action of slight vibration of the equipment and the argon gas flow, the splashed silicon is more likely to slide along the inclined inner side wall 1321 of the upper edge segment 132 and fall into the crucible 10, thereby greatly reducing the residence time and accumulation amount of the splashed silicon on the upper edge segment 132, reducing the risk of the splashed silicon falling into the solution in the subsequent process, and thereby improving the production quality of the single crystal silicon and reducing the rate of defective products.

[0050] In related art, the straight arm portion of some crucibles directly adopts a bending design, i.e., the upper edge segment is directly folded outward relative to the main body segment. In this case, the inner side wall and the outer side wall of the upper edge segment are both inclined inward from top to bottom, and most of the vertical projection of the upper edge segment exceeds the vertical projection of the main body segment. However, the crucible with the above structure has the following disadvantages in actual application: first, since the center of gravity of the upper edge segment of the above crucible is located outside the vertical projection of the main body segment, the support of the main body segment on the upper edge segment is limited, which leads to the collapse of the upper edge segment after the crucible is heated, seriously affecting the structural stability of the crucible; second, the manufacture of the above structure of the crucible needs to re-open the mold, greatly improving the complexity of the processing process of the crucible, and the amount of material used to manufacture the crucible is also increased.

[0051] It is understood that in this application, the vertical orthographic projection of the main body segment 131 covers the vertical orthographic projection of the upper edge segment 132. In other words, the center of gravity of the upper edge segment 132 is located within the vertical orthographic projection of the main body segment 131. On the one hand, this design allows the main body segment 131 to evenly distribute the stress borne by the upper edge segment 132 when it is heated, providing effective support for the upper edge segment 132 and alleviating the collapse phenomenon caused by local stress concentration. This not only extends the service life of the crucible 10 but also reduces production interruptions and safety risks caused by damage to the crucible 10. On the other hand, from a manufacturing process perspective, the crucible 10 of this application can achieve the inclined design of the inner wall 1321 of the upper edge segment 132 through common processing processes such as grinding or milling. This greatly simplifies the manufacturing process, reduces time and labor costs in the manufacturing process, and reduces unnecessary material usage since there is no need to re-mold, thereby reducing production costs and improving production efficiency.

[0052] The crucible 10 provided in this application embodiment, through the inclined design of the inner sidewall 1321 of the upper edge section 132, reduces the dwell time and accumulation of sputtered silicon in the upper edge section 132, thereby reducing the risk of sputtered silicon falling into the solution in subsequent processes, and thus improving the production quality of monocrystalline silicon. Combined with the structural design that the vertical orthographic projection of the main body section 131 covers the vertical orthographic projection of the upper edge section 132, the risk of the upper edge section 132 collapsing after the crucible 10 is heated is significantly reduced, thereby enhancing the structural stability of the crucible 10. Furthermore, it eliminates the need for re-molding, simplifies the manufacturing process, reduces the amount of materials used in the production of the crucible 10, and lowers production costs.

[0053] In some embodiments, such as Figure 3 As shown, the height H1 of the upper edge segment 132 and the height H2 of the main body segment 131 satisfy: 15≤H2 / H1≤20.

[0054] Specifically, H2 / H1 can be 15, 15.73, 16.967, 17.5, 18, 19.6935, 20 or other values ​​between 15 and 20, which are not limited in this application.

[0055] Understandably, by precisely controlling the height ratio of the upper edge section 132 to the main body section 131, on the one hand, the tilt angle of the inner sidewall 1321 of the upper edge section 132 can be further optimized, so that it can more effectively guide the sputtered silicon to slide into the silicon liquid. This ratio range ensures that the upper edge section 132 is neither too high, which would allow the sputtered silicon to still have a chance to stay, nor too low, which would reduce the guiding effect on the sputtered silicon. On the other hand, while meeting the requirements of sputtering silicon processing, the main body section 131 can maintain sufficient support for the upper edge section 132, which alleviates the collapse of the upper edge of the crucible 10 after heating. At the same time, the upper limit also avoids the material waste and increased manufacturing difficulty caused by the main body section 131 being too high.

[0056] In some embodiments, as shown in FIG. 1, the outer side wall 1322 of the upper edge section 132 is a straight wall extending vertically, and the outer side wall 1322 of the upper edge section 132 vertically abuts the outer side wall 1312 of the main body section 131. Figure 4

[0057] In this embodiment, as shown in FIG. 1, the outer side wall 1322 of the upper edge section 132 and the outer side wall 1312 of the main body section 131 are both straight walls extending vertically, and the outer side wall 1322 of the upper edge section 132 vertically abuts and is continuous with the outer side wall 1312 of the main body section 131. Figure 4

[0058] In some other embodiments, the outer side wall 1322 of the upper edge section 132 is outwardly inclined from top to bottom.

[0059] In yet some other embodiments, the outer side wall 1322 of the upper edge section 132 is curved, i.e., the vertical section of the outer side wall 1322 of the upper edge section 132 is an arc.

[0060] The crucible 10 provided by the embodiments of the present application has the outer side wall of the entire crucible 10 forming a continuous straight wall structure by designing the outer side wall 1322 of the upper edge section 132 as a straight wall structure vertically abutting the outer side wall 1312 of the main body section 131, which can effectively disperse stress and reduce stress concentration points. Compared with a structure that is not abutted or irregularly connected, using this design greatly enhances the anti-deformation ability of the entire crucible 10, prolongs the service life of the crucible 10, and also makes the outer side wall of the crucible 10 smoother, reducing the attachment points of dirt and impurities, thereby helping to simplify the cleaning process and improve the cleaning efficiency.

[0061] In some embodiments, as shown in FIG. 1, the angle a between the vertical section of the inner side wall 1321 of the upper edge section 132 and the vertical section of the outer side wall 1322 of the upper edge section 132 satisfies: 20°≤a≤30°. Figure 4

[0062] Specifically, a can be 20°, 22.5°, 24.64°, 25°, 27.5768, 29.569°, 30°, or other values between 20° and 30°, which are not limited by the present application.

[0063] ​​​It can be understood that by precisely controlling the included angle a between the vertical section of the inner side wall 1321 of the upper edge section 132 and the vertical section of the outer side wall 1322 of the upper edge section 132, so that the inner side wall 1321 of the upper edge section 132 forms a suitable slope, the silicon spatter can be effectively guided to slide into the silicon liquid, and the accumulation of silicon spatter on the upper edge section 132 is reduced. At the same time, the angle range also maintains the stability and controllability of the silicon spatter sliding process, reduces the situation that the silicon spatter splashes due to too large angle or stays due to too small angle. In addition, the angle range is suitable for common machining processes such as grinding or milling, and in the manufacturing process, the machining equipment can more easily realize the precise control of the angle, without complex programming or special tools, which reduces the processing difficulty and process cost, and in batch production, the consistency of the angle of the upper edge section 132 of each crucible 10 can be realized, the defective products caused by angle deviation are reduced, the product qualification rate is improved, and the production cost is further controlled.

[0064] In some embodiments, as shown in FIG. 1, the upper edge section 132 also has an upper wall surface 1323 connected to the inner side wall 1321 and the outer side wall 1322 on both sides. The vertical section of the upper wall surface 1323 of the upper edge section 132 is an arc line. Figure 4

[0065] The inner side wall 1321 of the upper edge section 132 is inclined inward from top to bottom, the outer side wall 1322 of the upper edge section 132 is a vertical straight wall, and the upper wall surface 1323 of the upper edge section 132 connects the top end of the inner side wall 1321 of the upper edge section 132 and the outer side wall 1322 of the upper edge section 132 to form a transition area. Based on the design of the vertical section of the upper wall surface 1323 of the upper edge section 132 as an arc line, specifically, the vertical section of the upper wall surface 1323 of the upper edge section 132 can be a circular arc line or other smooth curve, and the specific shape can be optimized according to actual needs.

[0066] For example, in some embodiments, the vertical section of the upper wall surface 1323 of the upper edge section 132 is a circular arc line.

[0067] Exemplarily, the height H1 of the upper edge section 132 can be 30 mm, the height H2 of the main body section 131 can be 600 mm, and the radius of the circular arc line formed by the vertical section of the upper wall surface 1323 of the upper edge section 132 can be 5 mm.

[0068] ​Understandably, by designing the vertical cross-section of the upper wall surface 1323 of the upper edge segment 132 as an arc, on the one hand, the contact method between the material and the upper edge segment 132 is changed. Compared with the planar upper wall surface, during the feeding process, when silicon material, sputtered silicon, and other materials fall onto the upper wall surface 1323 of the upper edge segment 132, they can slide down quickly, greatly reducing the possibility of material accumulation in the upper edge segment 132. This reduces the risk of material entering the solution and causing contamination in subsequent processes, thus improving the production quality of monocrystalline silicon. On the other hand, when the crucible 10 is subjected to impact from the material above or stress generated due to thermal expansion and contraction in a high-temperature environment, the upper wall surface 1323 of the arc-shaped upper edge segment 132 can evenly transfer the stress to the inner wall 1321 and the outer wall 1322 of the upper edge segment 132, reducing the concentration of stress at a certain point or in a certain area. This enhances the structural stability of the entire crucible 10 and extends its service life.

[0069] The crucible 10 provided in this application embodiment, by designing the upper wall surface 1323 of the upper edge section 132 as an arc surface, greatly reduces the possibility of material accumulation in the upper edge section 132 compared to the upper wall surface of a planar structure, thereby reducing the risk of material entering the solution and causing contamination in subsequent processes, improving the production quality of monocrystalline silicon, and enhancing the structural stability of the entire crucible 10 and extending the service life of the crucible 10.

[0070] In some embodiments, such as Figure 4 As shown, the vertical section of the upper wall surface 1323 of the upper edge segment 132 is tangent to the vertical section of the inner side wall 1321 of the upper edge segment 132, and the vertical section of the upper wall surface 1323 of the upper edge segment 132 is tangent to the vertical section of the outer side wall 1322 of the upper edge segment 132.

[0071] It can be understood that the vertical section of the upper wall surface 1323 of the upper edge section 132 is tangent to the vertical section of the inner side wall 1321 of the upper edge section 132, and is tangent to the vertical section of the outer side wall 1322 of the upper edge section 132, so that the upper wall surface 1323 of the upper edge section 132 is geometrically smoothly transitioned with the inner side wall 1321 of the upper edge section 132 and the outer side wall 1322 of the upper edge section 132. In one aspect, when the crucible 10 is heated and expanded in a high-temperature environment, or is impacted by materials during feeding, stress can be most smoothly transmitted between different wall surfaces, so as to be uniformly dispersed in the entire structure of the upper edge section 132, greatly enhancing the deformation resistance of the upper edge section 132, and further improving the structural stability of the entire crucible 10 under complex working conditions. In another aspect, in the single crystal silicon production process, when the splashed silicon contacts the upper edge section 132, since the upper wall surface 1323 of the upper edge section 132 is tangent to the inner side wall 1321 of the upper edge section 132, the most smooth sliding path is provided for the splashed silicon, and the splashed silicon can be smoothly transitioned from the inner side wall 1321 of the upper edge section 132 to the upper wall surface 1323 of the upper edge section 132 under the action of gravity and inertia, and then continue to slide. This design reduces the stagnation or accumulation of splashed silicon at the wall surface connection, and further reduces the risk of contamination of the solution by the splashed silicon in the subsequent process.

[0072] The crucible 10 provided by the embodiment of the present application reduces stress concentration through the smooth transition structure design of the inner side wall 1321 of the upper edge section 132, the upper wall surface 1323 of the upper edge section 132, and the outer side wall 1322 of the upper edge section 132, greatly enhances the deformation resistance of the upper edge section 132, further improves the structural stability of the entire crucible 10 under complex working conditions, provides the most smooth sliding path for the splashed silicon, reduces the stagnation or accumulation of splashed silicon at the wall surface connection, and further reduces the risk of contamination of the solution by the splashed silicon in the subsequent process.

[0073] In some embodiments, as shown in Figure 4 The connection position of the upper wall surface 1323 of the upper edge section 132 and the inner side wall 1321 of the upper edge section 132 is higher than the connection position of the upper wall surface 1323 of the upper edge section 132 and the outer side wall 1322 of the upper edge section 132.

[0074] In this implementation, as shown in Figure 4As shown, the upper wall surface 1323 of the upper edge section 132 forms an asymmetric structure on the inner side and the outer side, and the connecting point of the inner side wall 1321 of the upper edge section 132 is higher, while the connecting point of the outer side wall 1322 of the upper edge section 132 is relatively low. The silicon spatters will more naturally slide along the inner side wall 1321 of the upper edge section 132 to the inside of the crucible 10 in the sliding process, rather than staying on the upper edge section 132. The use of the asymmetric design can effectively guide the sliding path of the silicon spatters, further reduce the adhesion of the silicon spatters on the upper edge section 132, thereby reducing the probability of impurities entering the silicon liquid and improving the purity of the single crystal silicon.

[0075] The crucible 10 provided by the embodiments of the present application optimizes the sliding path of the silicon spatters by designing the connecting position of the upper wall surface 1323 of the upper edge section 132 to the inner side wall 1321 of the upper edge section 132 to be higher than the connecting position of the upper wall surface 1323 of the upper edge section 132 to the outer side wall 1322 of the upper edge section 132, further reduces the adhesion of the silicon spatters on the upper edge section 132, thereby maximally reducing the probability of impurities entering the silicon liquid to cause pollution, and further improving the production quality of the single crystal silicon.

[0076] In some embodiments, as shown in FIG. 1, the bottom support part 11 is curved, and the curvature of the bottom support part 11 is different from the curvature of the corner part 12. Figure 3 As shown in FIG. 1, the bottom support part 11 is curved, and the curvature of the bottom support part 11 is different from the curvature of the corner part 12.

[0077] As shown in FIG. 1, the bottom support part 11 is curved, and the curvature of the bottom support part 11 is different from the curvature of the corner part 12. Figure 3 As shown in FIG. 1, the vertical section of the bottom support part 11 and the vertical section of the corner part 12 are both circular arcs, and the bending degrees of the two circular arcs are different.

[0078] In this embodiment, as shown in FIG. 1, the curvature of the bottom support part 11 is smaller than the curvature of the corner part 12, that is, the bending degree of the bottom support part 11 is lower than the bending degree of the corner part 12. Figure 3 In other embodiments, the curvature of the bottom support part 11 is greater than the curvature of the corner part 12, that is, the bending degree of the bottom support part 11 is higher than the bending degree of the corner part 12.

[0079] In other embodiments, the curvature of the bottom support part 11 is greater than the curvature of the corner part 12, that is, the bending degree of the bottom support part 11 is higher than the bending degree of the corner part 12.

[0080] It can be understood that, compared with the traditional flat-bottomed crucible 10, the application can increase the heat coupling efficiency of the bottom by designing the curved bottom support part 11, increase the temperature difference in the melt, and enhance the natural convection of the melt. This not only facilitates the uniform growth of the crystal, but also reduces the crystal defects caused by uneven temperature. By adjusting the curvature of the bottom support part 11, the temperature gradient of the bottom of the crucible 10 can be optimized, the heat distribution is more uniform, and the crystallization problem caused by local temperature being too low can be reduced, thereby improving the quality of single crystal growth. In combination with the structure design of different curvatures of the bottom support part 11 and the corner part 12, the bottom support part 11 and the corner part 12 can better adapt to thermal expansion and thermal contraction, reduce cracks or deformation caused by uneven thermal stress, and thus better withstand high temperature and external force, thereby prolonging the service life of the crucible 10

[0081] The application also provides a crucible assembly 1.

[0082] In some embodiments, as shown in Figure 5 The crucible assembly 1 comprises a support structure 20 and a crucible 10 according to any one of the preceding embodiments.

[0083] The crucible 10 is arranged in the support structure 20.

[0084] In this embodiment, as shown in Figure 5 The support structure 20 comprises a crucible base 21 and a crucible support 22, which mainly serves to support and protect the crucible support 22 is installed at the bottom of the crucible base 21. Among them, the crucible base 21 is wrapped on the outer side wall of the crucible 10, specifically, the crucible base 21 can be sleeved on the corner part 12 and the main body section 131, and the crucible support 22 is wrapped on the outer bottom wall of the crucible 10, specifically, the crucible support 22 can be supported below the bottom support part 11.

[0085] The crucible assembly 1 provided by the embodiment of the application reduces the residence and accumulation of silicon splashes on the upper edge section 132, thereby reducing the risk of silicon splashes falling into the solution in subsequent processes, and improving the production quality of single crystal silicon. In combination with the structure design that the vertical projection of the main body section 131 covers the vertical projection of the upper edge section 132, the risk of the upper edge section 132 collapsing after being heated is significantly reduced, thereby enhancing the structural stability of the crucible 10, and without the need to re-open the mold, the manufacturing process is simplified, the production materials of the crucible 10 are reduced, and the production cost is reduced.

[0086] The application also provides a single crystal furnace.

[0087] In some embodiments, the single crystal furnace comprises a furnace body and a crucible assembly 1 as described above.

[0088] The crucible assembly 1 is arranged in the furnace body.

[0089] The single crystal furnace provided by the embodiment of the present application reduces the residence and accumulation of the splashed silicon on the upper edge section 132, thereby reducing the risk of the splashed silicon falling into the solution in the subsequent process, and further improving the production quality of the single crystal silicon. In combination with the structure design that the vertical projection of the main body section 131 covers the vertical projection of the upper edge section 132, the risk of the collapse of the upper edge section 132 of the crucible 10 after being heated is significantly reduced, thereby enhancing the structural stability of the crucible 10, and without the need of re-opening the mold, the manufacturing process is simplified, the production material of the crucible 10 is reduced, and the production cost is reduced.

[0090] The terms “first”, “second”, etc. in the description and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by “first”, “second”, etc. are generally of a kind and do not limit the number of objects, for example, the first object can be one or more. In addition, “and / or” in the description and claims indicates at least one of the connected objects, and the character “ / ” generally indicates that the front and rear associated objects are in an “or” relationship.

[0091] In the description of the present application, it should be understood that the orientations or positional relationships indicated by the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “upper”, “lower”, “front”, “rear”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inner”, “outer”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential” are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0092] In the description of the present application, “first feature” and “second feature” can include one or more features.

[0093] In the description of the present application, “a plurality of” means two or more.

[0094] In the description of the present application, “above” or “below” the first feature and the second feature can include that the first and second features are in direct contact, or can include that the first and second features are not in direct contact but are in contact through another feature between them.

[0095] In the description of the application, the first feature is "on", "above", and "over" the second feature includes the first feature directly above and obliquely above the second feature, or simply indicates that the first feature is higher than the second feature in height.

[0096] Other configurations of … according to embodiments of the present application, such as … and …, and operations are known to those skilled in the art, and are not described in detail here.

[0097] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the exemplary description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0098] Although the embodiments of the present application have been shown and described, those skilled in the art can understand that various changes, modifications, replacements and variations can be made to the embodiments without departing from the principles and purposes of the present application, and the scope of the present application is defined by the claims and their equivalents.

Claims

1. A crucible, characterized by, The utility model relates to a kind of crucible and its supporting structure, including: A bottom support part; A corner part connected to the upper end of the bottom support part; A straight arm part connected to the upper end of the corner part;Wherein, the straight arm part includes a main body segment and an upper edge segment connected along the vertical direction, the inner side wall and the outer side wall of the main body segment are straight walls extending along the vertical direction, the inner side wall of the upper edge segment is inclined inward from top to bottom, and the vertical projection of the main body segment covers the vertical projection of the upper edge segment.

2. The crucible of claim 1, wherein The height H1 of the upper edge segment and the height H2 of the main body segment satisfy: 15≤H2 / H1≤20.

3. The crucible of claim 1, wherein The outer side wall of the upper edge segment is a straight wall extending along the vertical direction, and is in vertical butt joint with the outer side wall of the main body segment.

4. The crucible of claim 3, wherein The included angle α between the vertical section of the inner side wall of the upper edge segment and the vertical section of the outer side wall of the upper edge segment satisfies: 20°≤α≤30°.

5. The crucible of claim 1, wherein The upper edge segment also has an upper wall surface on both sides of the inner side wall and the outer side wall of the upper edge segment, and the vertical section of the upper wall surface of the upper edge segment is an arc.

6. The crucible of claim 5, wherein The vertical section of the upper wall surface of the upper edge segment is tangent to the vertical section of the inner side wall of the upper edge segment, and the vertical section of the upper wall surface of the upper edge segment is tangent to the vertical section of the outer side wall of the upper edge segment.

7. The crucible of claim 5, wherein The connection position of the upper wall surface of the upper edge segment and the inner side wall of the upper edge segment is higher than the connection position of the upper wall surface of the upper edge segment and the outer side wall of the upper edge segment.

8. The crucible according to any one of claims 1 to 7, characterized in that The bottom support part is curved, and the curvature of the bottom support part is different from the curvature of the corner part.

9. A crucible assembly characterized by, The utility model relates to a kind of crucible and its supporting structure, including: The crucible according to any one of claims 1-8; A supporting structure, wherein the crucible is arranged in the supporting structure.

10. A single crystal furnace characterized by comprising: The utility model relates to a kind of crucible and its supporting structure, including: A furnace body; The crucible assembly according to claim 9 is arranged in the furnace body.

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