Multistage temperature control semiconductor refrigerator

By setting up a multi-stage temperature control structure in the semiconductor cooler, the temperature of each cold-end insulating sheet can be independently controlled, solving the problem that heat can only be dissipated at the same temperature in the existing technology, and realizing multi-stage temperature control adaptability for multiple heat sinks.

CN223855895UActive Publication Date: 2026-01-30O NET COMM (SHENZHEN) LTD
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Patent Information

Application Number
CN202423249996.8
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-12-25
Publication Date
2026-01-30
Estimated Expiration
2034-12-25

AI Technical Summary

Technical Problem

Existing semiconductor coolers can only dissipate heat from a heat sink at the same temperature, making them difficult to apply to multiple heat sinks that require different temperatures.

Method used

Design a multi-stage temperature-controlled semiconductor cooler by setting at least two independent cold-end insulating sheets. The semiconductor P-p and N-pole of each cold-end insulating sheet are electrically connected through a conductive metal layer and controlled by an independent power supply electrode, thereby realizing independent temperature control of each cold-end insulating sheet.

Benefits of technology

It achieves multi-level temperature control for different heat sinks, enabling heat dissipation from multiple heat sinks at different temperatures, and adapts to various application scenarios.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to the technical field of semiconductor coolers, in particular to a multistage temperature control semiconductor cooler. The multistage temperature control semiconductor refrigerator comprises a hot end insulating sheet, at least two cold end insulating sheets, a plurality of semiconductor P poles, a plurality of semiconductor N poles and a plurality of conductive metal layers. The cold-end insulating sheet and the hot-end insulating sheet are oppositely arranged, and the semiconductor P pole and the semiconductor N pole are arranged between the cold-end insulating sheet and the hot-end insulating sheet; the conductive metal layers are arranged among the semiconductor P pole, the semiconductor N pole and the cold end insulating sheet and among the semiconductor P pole, the semiconductor N pole and the hot end insulating sheet; the semiconductor P pole and the semiconductor N pole corresponding to the same cold-end insulating sheet are electrically connected through a conductive metal layer; wherein the cold end insulation sheets are mutually independent, and the refrigeration temperature is independently controlled through the corresponding semiconductor P pole and the semiconductor N pole.
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Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor refrigerator, especially a multistage temperature control semiconductor refrigerator. BACKGROUND

[0002] The semiconductor refrigerator is TEC (Thermo Electric Cooler), which is made by using the Peliter effect of semiconductor material. The so-called Peliter effect refers to the phenomenon that one end absorbs heat and the other end emits heat when a direct current passes through the electric couple composed of two kinds of semiconductor materials. Therefore, the semiconductor refrigerator is also called the thermoelectric refrigerator.

[0003] As shown in Figure 1 The current commonly used semiconductor refrigerator design is TEC cold face integration, so only one temperature can be set for temperature control. Such semiconductor refrigerator can only dissipate heat to the heat sink at the same temperature, and it is difficult to be applied to multiple heat sinks that need different temperatures for heat dissipation. INVENTION CONTENTS

[0004] The utility model discloses a multistage temperature control semiconductor refrigerator, to solve the problem that the semiconductor refrigerator in the prior art can only dissipate heat to the heat sink at the same temperature, and it is difficult to be applied to multiple heat sinks that need different temperatures for heat dissipation.

[0005] The utility model discloses a multistage temperature control semiconductor refrigerator, including heat end insulating sheet, at least two cold end insulating sheet, a plurality of semiconductor P pole, a plurality of semiconductor N pole and a plurality of conductive metal layer, cold end insulating sheet and heat end insulating sheet are opposite and set up, and semiconductor P pole and semiconductor N pole are set up between cold end insulating sheet and heat end insulating sheet, and conductive metal layer is set up between semiconductor P pole, semiconductor N pole and cold end insulating sheet, and is set up between semiconductor P pole, semiconductor N pole and heat end insulating sheet, and the semiconductor P pole, semiconductor N pole of corresponding same cold end insulating sheet are connected through conductive metal layer electricity, wherein, the cold end insulating sheet is independent, and the refrigeration temperature is controlled independently through the corresponding semiconductor P pole, semiconductor N pole of each.

[0006] Optionally, the semiconductor refrigerator includes at least two groups of power supply electrodes, each group of power supply electrodes is electrically connected with the semiconductor P pole, the semiconductor N pole and the conductive metal layer corresponding to the controlled cold end insulating sheet.

[0007] Each group of power supply electrodes is electrically connected with the semiconductor P pole, the semiconductor N pole and the conductive metal layer corresponding to the corresponding cold end insulating sheet.

[0008] Optionally, the power supply electrode includes a positive power supply end and a negative power supply end.

[0009] Optionally, the cold-end insulation sheet is arranged side by side.

[0010] Optionally, the hot-end insulation sheet has an uncovered area which is not covered by the cold-end insulation sheet, and the power supply electrode is arranged on the uncovered area.

[0011] Optionally, the conductive metal layer is electrically connected with the corresponding power supply electrode and is led out from the uncovered area to the corresponding semiconductor P pole, semiconductor N pole and conductive metal layer of the controlled cold-end insulation sheet.

[0012] Optionally, the cold-end insulation sheet is arranged in two pieces, and the power supply electrode is arranged in two groups, and the two groups of power supply electrodes are electrically connected with the two pieces of cold-end insulation sheet respectively.

[0013] Optionally, the area ratio of the two pieces of cold-end insulation sheet is (1:4) to (2:5).

[0014] Optionally, the area ratio of the two pieces of cold-end insulation sheet is 1:3.

[0015] Optionally, the hot-end insulation sheet and the cold-end insulation sheet are ceramic insulation substrates.

[0016] Compared with the prior art, the multi-stage temperature control semiconductor refrigerator provided by the embodiment of the utility model has the beneficial effects that: the multi-stage temperature control semiconductor refrigerator of the utility model is provided with at least two cold-end insulation sheets, the two cold-end insulation sheets are provided with corresponding semiconductor P poles and semiconductor N poles, the semiconductor P pole and the semiconductor N pole under the same cold-end insulation sheet are electrically connected through a conductive metal layer, and the cold-end insulation sheet is independently controlled through the respective semiconductor P pole and semiconductor N pole, so that the independent control of the refrigeration temperature of each cold-end insulation sheet is realized, different cold-end insulation sheets have different refrigeration temperatures, multi-stage temperature control is realized, and the multi-stage temperature control semiconductor refrigerator can be applied to the scene of multiple heat sinks which need different temperatures for heat dissipation. BRIEF DESCRIPTION OF DRAWINGS

[0017] The technical scheme of the utility model will be further described in detail below with reference to the drawings and embodiments, and the drawings are as follows:

[0018] Figure 1 is a schematic view of a prior semiconductor refrigerator;

[0019] Figure 2 is a schematic view of a semiconductor refrigerator according to an embodiment of the utility model;

[0020] Figure 3 is another schematic view of a semiconductor refrigerator according to an embodiment of the utility model.

[0021] The reference signs in the drawings are as follows:

[0022] 1. Hot end insulating sheet; 11. Uncovered area; 2. Cold end insulating sheet; 3. Semiconductor P pole; 4. Semiconductor N pole; 5. Power supply electrode; 51. Positive power supply terminal; 52. Negative power supply terminal. Detailed Implementation

[0023] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The preferred embodiments of this utility model will now be described in detail with reference to the accompanying drawings.

[0024] This utility model embodiment provides a multi-stage temperature-controlled semiconductor cooler, such as... Figure 2 and Figure 3 As shown, the multi-stage temperature-controlled semiconductor cooler includes a hot-end insulating sheet 1, at least two cold-end insulating sheets 2, multiple semiconductor P-electrodes 3, multiple semiconductor N-electrodes 4, and multiple conductive metal layers. The cold-end insulating sheets 2 and the hot-end insulating sheets 1 are arranged opposite each other, and the semiconductor P-electrodes 3 and N-electrodes 4 are disposed between the cold-end insulating sheets 2 and the hot-end insulating sheets 1. The conductive metal layers are disposed between the semiconductor P-electrodes 3 and N-electrodes 4 and the cold-end insulating sheets 2, and between the semiconductor P-electrodes 3 and N-electrodes 4 and the hot-end insulating sheets 1. The semiconductor P-electrodes 3 and N-electrodes 4 corresponding to the same cold-end insulating sheet 2 are electrically connected through the conductive metal layers. The cold-end insulating sheets 2 are independent of each other, and their respective semiconductor P-electrodes 3 and N-electrodes 4 independently control the cooling temperature.

[0025] This utility model's multi-stage temperature-controlled semiconductor cooler is equipped with at least two cold-end insulating sheets 2. The two cold-end insulating sheets 2 are equipped with corresponding semiconductor P-p poles 3 and semiconductor N-p poles 4. The semiconductor P-p poles 3 and semiconductor N-p poles 4 under the same cold-end insulating sheet 2 are electrically connected through a conductive metal layer. The cold-end insulating sheets 2 are independently controlled through their respective semiconductor P-p poles 3 and semiconductor N-p poles 4, thereby achieving independent control of the cooling temperature of each cold-end insulating sheet 2. Different cold-end insulating sheets 2 have different cooling temperatures, realizing multi-stage temperature control. It can be applied to scenarios where multiple heat sinks need to dissipate heat at different temperatures.

[0026] Specifically, the hot-end insulating sheet 1 is the insulating material layer at the hot end of the thermoelectric cooler. Its main function is to isolate the hot end from direct contact with the external environment, prevent current leakage, and provide mechanical support and heat conduction. The hot-end insulating sheet 1 typically has good thermal conductivity to effectively conduct heat from the thermoelectric cooler to the heat sink or other heat dissipation devices. The cold-end insulating sheet 2 is the cold end of the thermoelectric cooler, in contact with the object that needs to be cooled. Its function is to isolate the cold end from direct contact with the external environment, prevent current leakage, and provide mechanical support and heat transfer. The cold-end insulating sheet 2 also needs to have good thermal conductivity to ensure that the cold end can effectively absorb heat.

[0027] The semiconductor P pole 3 refers to a semiconductor material doped with acceptor impurities (impurities that accept electrons), which is commonly used to form P-type semiconductors. In a semiconductor refrigerator, the P pole is part of a thermocouple pair that, when an electric current passes through, releases heat at one end and absorbs heat at the other end. The semiconductor N pole 4 refers to a semiconductor material doped with donor impurities (impurities that provide electrons), which is commonly used to form N-type semiconductors. In a semiconductor refrigerator, the N pole is also part of a thermocouple pair that works in conjunction with the P pole to achieve heat transfer.

[0028] The conductive metal layer is a conductive material that connects the semiconductor P pole and the N pole, and is located between the semiconductor layer and the insulating sheet. The main function of the conductive metal layer is to provide a channel for the current to flow uniformly through each semiconductor unit, achieving effective thermoelectric conversion. The conductive metal layer is usually made of high-conductivity materials such as copper or aluminum to reduce resistance and heat loss. The electrical connection between the conductive metal layer and the semiconductor P pole 3, semiconductor N pole 4 can be made using conventional settings, which will not be described here.

[0029] The hot end insulating sheet 1 and the cold end insulating sheet 2 are ceramic insulating substrates.

[0030] Specifically, the semiconductor refrigerator includes at least two groups of power supply electrodes 5, each group of power supply electrodes 5 is electrically connected with the corresponding semiconductor P pole 3, semiconductor N pole 4 and conductive metal layer of the controlled cold end insulating sheet 2; each group of power supply electrodes 5 is electrically connected with the corresponding semiconductor P pole 3, semiconductor N pole 4 and conductive metal layer of the corresponding cold end insulating sheet 2. By setting at least two groups of power supply electrodes 5, each group of power supply electrodes 5 independently controls the corresponding cold end insulating sheet 2 and its semiconductor P pole 3, semiconductor N pole 4 and conductive metal layer, achieving independent temperature control of each cold end insulating sheet 2, which can set different temperatures for different cold ends as needed to adapt to different heat sinks or application scenarios. Each group of power supply electrodes 5 is electrically connected with the corresponding semiconductor P pole 3, semiconductor N pole 4 and conductive metal layer of the controlled cold end insulating sheet 2, and the power supply electrodes 5 are externally connected to the power supply to realize the refrigeration control of different cold end insulating sheets 2.

[0031] Specifically, the power supply electrode 5 includes a positive supply end 51 and a negative supply end 52. Each group of power supply electrodes 5 includes a positive supply end 51 and a negative supply end 52, and the positive supply end 51 and the negative supply end 52 are connected to the positive and negative poles of the power supply, respectively.

[0032] Further, the cold end insulating sheets 2 are arranged side by side. The cold end insulating sheets 2 can be arranged in two, three or more. The side-by-side arrangement of the cold end insulating sheets 2 can make more efficient use of space, allowing more cold ends to be deployed within a limited space, thereby providing cooling for more heat sinks.

[0033] The hot-end insulation sheet 1 has an uncovered area 11 which is not covered by the cold-end insulation sheet 2, and the power supply electrode 5 is arranged on the uncovered area 11. Arranging the uncovered area 11 on the hot-end insulation sheet 1 facilitates the arrangement of the power supply electrode 5 and the operation of the external power supply.

[0034] The conductive metal layer is electrically connected with the corresponding power supply electrode 5 and is led out from the uncovered area 11 to the corresponding semiconductor P pole 3, semiconductor N pole 4 and conductive metal layer of the controlled cold-end insulation sheet 2. The uncovered area 11 is used to install the power supply electrode 5 and provide wiring space for the conductive metal layer. After the conductive metal layer is electrically led out from the power supply electrode 5, there is sufficient wiring space to extend to the corresponding semiconductor P pole 3, semiconductor N pole 4 and conductive metal layer of the controlled cold-end insulation sheet 2, thereby increasing the arrangement space of the conductive metal layer and reducing the wiring difficulty of the conductive metal layer.

[0035] Specifically, the cold-end insulation sheet 2 is provided with two pieces, and the power supply electrode 5 is provided with two groups, and the two groups of power supply electrodes 5 are respectively electrically connected with the corresponding semiconductor P pole 3, semiconductor N pole 4 and conductive metal layer of the two pieces of cold-end insulation sheet 2. The area ratio of the two pieces of cold-end insulation sheet 2 is (1:4)~(2:5). More specifically, the area ratio of the two pieces of cold-end insulation sheet 2 is 1:3.

[0036] It should be understood that the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them. For those skilled in the art, the technical solutions recorded in the above embodiments can be modified, or some technical features can be replaced by equivalents; all these modifications and replacements should belong to the protection scope of the appended claims of the present application.

Claims

1. A multi-stage temperature-controlled semiconductor refrigerator, characterized by comprising: The semiconductor refrigerator comprises a hot-end insulating sheet, at least two cold-end insulating sheets, a plurality of semiconductor P-poles, a plurality of semiconductor N-poles and a plurality of conductive metal layers; the cold-end insulating sheets and the hot-end insulating sheet are oppositely arranged, the semiconductor P-poles and the semiconductor N-poles are arranged between the cold-end insulating sheets and the hot-end insulating sheet; the conductive metal layers are arranged between the semiconductor P-poles, the semiconductor N-poles and the cold-end insulating sheets and between the semiconductor P-poles, the semiconductor N-poles and the hot-end insulating sheet; the semiconductor P-poles and the semiconductor N-poles corresponding to the same cold-end insulating sheet are electrically connected through the conductive metal layers; wherein the cold-end insulating sheets are independent of each other, and the refrigeration temperature is controlled independently by the semiconductor P-poles and the semiconductor N-poles corresponding to the cold-end insulating sheets.

2. The multi-stage thermoelectric cooler of claim 1, wherein, The semiconductor refrigerator comprises at least two groups of power supply electrodes, each group of the power supply electrodes being electrically connected with the semiconductor P-poles, the semiconductor N-poles and the conductive metal layers corresponding to the controlled cold-end insulating sheet. Each group of the power supply electrodes is electrically connected with the semiconductor P-poles, the semiconductor N-poles and the conductive metal layers corresponding to the controlled cold-end insulating sheet.

3. The multi-stage thermoelectric cooler of claim 2, wherein, The power supply electrodes comprise positive power supply ends and negative power supply ends.

4. The multi-stage thermoelectric cooler of claim 2, wherein, The cold-end insulating sheets are arranged side by side.

5. The multi-stage thermoelectric cooler of claim 4, wherein, The hot-end insulating sheet has an uncovered area which is not covered by the cold-end insulating sheets, and the power supply electrodes are arranged in the uncovered area.

6. The multi-stage thermoelectric cooler of claim 5, wherein, The conductive metal layers are electrically connected with the corresponding power supply electrodes and are led out from the uncovered area to be electrically connected with the semiconductor P-poles, the semiconductor N-poles and the conductive metal layers corresponding to the controlled cold-end insulating sheet.

7. The multi-stage thermoelectric cooler of claim 2, wherein, The cold-end insulating sheets are provided with two pieces, and the power supply electrodes are provided with two groups, and the two groups of the power supply electrodes are respectively electrically connected with the two pieces of the cold-end insulating sheets.

8. The multi-stage thermoelectric cooler of claim 7, wherein, The area ratio of the two pieces of the cold-end insulating sheets is (1:4) to (2:5).

9. The multi-stage thermoelectric cooler of claim 8, wherein, The area ratio of the two pieces of the cold-end insulating sheets is 1:

3.

10. The multi-stage thermoelectric cooler of claim 1, wherein, The hot-end insulating sheet and the cold-end insulating sheet are ceramic insulating substrates.