Single crystal furnace with pit heat dissipation structure

Abstract

The utility model provides a single crystal furnace with a pit heat dissipation structure, which comprises a furnace cover part, a middle furnace barrel part and a lower furnace barrel part which are sequentially connected end to end, and the inner wall of the furnace cover part, the inner wall of the middle furnace barrel part and the inner wall of the lower furnace barrel part are respectively a first inner wall, a second inner wall and a third inner wall. The first inner wall, the second inner wall and the third inner wall are each provided with a heat dissipation flow guide structure, and each heat dissipation flow guide structure comprises a plurality of pits evenly distributed in the vertical direction and the horizontal direction. According to the single crystal furnace with the pit heat dissipation structure, through the heat dissipation flow guide structure comprising a plurality of pits, the heat dissipation area of the single crystal furnace is greatly increased, heat can be quickly and effectively dissipated, and the heat dissipation efficiency is remarkably improved; the pits can stabilize a thermal field and provide a more uniform temperature environment for crystal growth; the gas flow in the single crystal furnace can be more excellently controlled, turbulent flow or vortex can be reduced, the gas flow is more uniform and stable, and the utilization rate of reaction gas is improved.

Description

Technical Field

[0001] This application relates to the field of single crystal furnace technology, and in particular to a single crystal furnace with a recessed heat dissipation structure. Background Technology

[0002] A single crystal furnace is a specialized piece of equipment used to prepare semiconductor materials (such as silicon) or optical materials (such as quartz and sapphire). It produces single crystals by gradually cooling molten material while rotating it, forming a single crystal structure. This process, called "growth," is fundamental to the manufacture of high-performance electronic devices and optical components.

[0003] During the operation of a single crystal furnace, heat management plays a crucial role in the quality of crystal growth. The smooth and flat surface of traditional single crystal furnaces leads to problems such as low heat exchange efficiency, uneven heat distribution, and poor airflow guidance in existing heat dissipation methods, making it difficult to meet the high-quality requirements of single crystal silicon production.

[0004] Therefore, it is necessary to design a single-crystal furnace with a recessed heat dissipation structure to solve the above problems. Utility Model Content

[0005] In view of this, in order to overcome the shortcomings of the prior art, this utility model provides a single crystal furnace with a concave heat dissipation structure, which effectively solves the problems of low exchange efficiency, uneven heat distribution and poor airflow guidance effect caused by the existing single crystal furnace structure.

[0006] According to the present invention, a single crystal furnace with a recessed heat dissipation structure is provided, wherein the single crystal furnace with the recessed heat dissipation structure includes a furnace cover, a middle furnace cylinder, and a lower furnace cylinder connected end to end in sequence. The inner wall of the furnace cover, the inner wall of the middle furnace cylinder, and the inner wall of the lower furnace cylinder are respectively a first inner wall, a second inner wall, and a third inner wall. The first inner wall, the second inner wall, and the third inner wall are all provided with a heat dissipation guiding structure, and the heat dissipation guiding structure includes a plurality of recesses evenly arranged in the vertical and horizontal directions.

[0007] Preferably, the recesses on the first inner wall are formed in a circular shape.

[0008] Preferably, the depth of the circular pit is 2-3 mm, and the diameter of the circular pit is 10-15 mm.

[0009] Preferably, the distance between two adjacent circular recesses is 15-22.5 mm.

[0010] Preferably, the pits on the second inner wall are formed in an elliptical shape.

[0011] Preferably, the depth of the elliptical recess is 3-4 mm, and the diameter of the elliptical recess is 15-20 mm.

[0012] Preferably, the distance between two adjacent elliptical recesses is 22.5-30 mm.

[0013] Preferably, the recesses on the third inner wall are formed in a circular or square shape.

[0014] Preferably, the depth of the circular or square recess is 4-5 mm, the diameter of the circular recess is 20-25 mm, and the side length of the square recess is 15-20 mm.

[0015] Preferably, the distance between two adjacent circular or directional pits is 30-37.5 mm.

[0016] This single-crystal furnace, which appears to be not designed with a recessed heat dissipation structure, utilizes a heat dissipation and airflow guiding structure with multiple recesses on its first, second, and third inner walls. This significantly increases the heat dissipation area compared to traditional heat dissipation methods that rely solely on flat heat sinks or simple furnace wall cooling. The recesses in this furnace allow heat to dissipate more quickly and effectively, significantly improving heat dissipation efficiency and reducing heat source consumption, thus meeting environmental protection requirements. The recesses also stabilize the thermal field, providing a more uniform temperature environment for crystal growth. Furthermore, the recesses allow for better control of airflow within the furnace, reducing turbulence or eddies, resulting in more uniform and stable airflow and improved utilization of reactant gases. Due to the optimized heat dissipation and thermal field performance, damage to the single-crystal furnace caused by thermal stress and other issues is reduced, extending its service life and lowering maintenance costs.

[0017] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 A schematic diagram of a single-crystal furnace with a recessed heat dissipation structure according to an embodiment of the present invention is shown.

[0020] Figure 2 A cross-sectional view of a single-crystal furnace with a recessed heat dissipation structure according to an embodiment of the present invention is shown.

[0021] Figure 3A schematic diagram of the structure of the furnace cover portion according to an embodiment of the present invention is shown;

[0022] Figure 4 A schematic diagram of the structure of the furnace cylinder section according to an embodiment of the present invention is shown;

[0023] Figure 5 A schematic diagram of the lower furnace tube section according to an embodiment of the present invention is shown.

[0024] Reference numerals: 1-furnace cover; 101-first inner wall; 2-middle furnace cylinder; 201-second inner wall; 3-lower furnace cylinder; 301-third inner wall; 4-pit. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0026] In the description of the embodiments of this application, it should be noted that the terms "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this application is in use. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. In addition, the terms "first," "second," and "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0027] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0028] In the description of the embodiments of this application, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "connect" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0029] According to the present invention, a single crystal furnace with a recessed heat dissipation structure is provided, such as... Figures 1 to 5 As shown, this single-crystal furnace with a recessed heat dissipation structure has a heat dissipation guiding structure on its inner wall. Therefore, compared with a single-crystal furnace with a smooth and flat surface, it can reflect heat, change the flow state of the airflow inside the furnace, and improve the heat dissipation efficiency. This single-crystal furnace with a recessed heat dissipation structure includes a furnace cover part 1, a middle furnace cylinder part 2, and a lower furnace cylinder part 3.

[0030] In the following description, reference will be made to Figures 1 to 5 The detailed structure of the furnace cover 1, the middle furnace cylinder 2, and the lower furnace cylinder 3 of the single crystal furnace with a recessed heat dissipation structure is described in detail.

[0031] like Figure 1 As shown, in this embodiment, the furnace cover 1, the middle furnace cylinder 2, and the lower furnace cylinder 3 are connected sequentially along the vertical direction. The connection method can be, for example, using a snap-fit ​​mechanism. The vertical direction can be understood as... Figure 1 The upper and lower directions are described. Specifically, the inner walls of the furnace cover 1, the middle furnace cylinder 2, and the lower furnace cylinder 3 are respectively a first inner wall 101, a second inner wall 201, and a third inner wall 301. Each of the three inner walls is provided with a heat dissipation guiding structure, which includes multiple recesses 4 evenly arranged in the vertical and horizontal directions. The recesses 4 are evenly arranged on these three inner walls according to their different structures, for example, as shown below. Figure 3 As shown, since the furnace cover 1 has an arc-shaped top, the recesses 4 formed on the first inner wall 101 of the furnace cover 1 need to be arranged in an arc shape to match the shape of the first inner wall 101. And as... Figure 4 and Figure 5 As shown, since the second inner wall 201 of the middle furnace tube 2 and the third inner wall 301 of the lower furnace tube 3 are both annular structures formed by vertical surfaces, the pits 4 on these two inner walls are also arranged in annular shape.

[0032] The recesses 4 serve to reflect and concentrate heat. By placing recesses 4 on the three inner walls of the single crystal furnace, they reflect heat, reducing heat absorption by the cooling water within the furnace walls. This concentrates heat within the furnace, maintaining a stable temperature gradient and providing a favorable thermal environment for single crystal growth. Simultaneously, the increased surface area of ​​the recesses 4 enhances heat dissipation, improving heat absorption efficiency and accelerating heat dissipation within the furnace, according to heat exchange principles. For example, during the ingot pulling process, the recesses 4 can quickly dissipate heat, ensuring the growth rate and quality of the ingot. Furthermore, the recesses 4 can alter the airflow pattern within the furnace. Multiple recesses 4 reduce turbulence or eddies, resulting in more uniform and stable airflow. This helps optimize the distribution of reactive gases, ensuring the consistency and stability of the reaction during single crystal growth.

[0033] In addition, the pits 4 can be arranged evenly without any special restrictions. However, the distribution density of the pits 4 can be different in different areas of the furnace wall to meet the heat dissipation requirements of different parts. For example, the distribution density in the lower furnace cylinder 3 can be greater than the distribution density in the middle furnace cylinder 2.

[0034] This single-crystal furnace with a recessed heat dissipation structure features a heat dissipation and flow guiding structure including multiple recesses 4 on its first inner wall 101, second inner wall 201, and third inner wall 301. This significantly increases the heat dissipation area of ​​the furnace. Compared to traditional heat dissipation methods that rely solely on flat heat sinks or simple furnace wall cooling, the recesses 4 in this furnace allow heat to dissipate more quickly and effectively, significantly improving heat dissipation efficiency and reducing heat source consumption, thus meeting environmental protection requirements. The recesses 4 also stabilize the thermal field, providing a more uniform temperature environment for crystal growth. Furthermore, the recesses 4 provide superior control over airflow within the furnace, reducing turbulence or eddies, resulting in more uniform and stable airflow and improved utilization of reactant gases. Due to the optimized heat dissipation and thermal field performance, damage to the furnace caused by thermal stress and other issues is reduced, extending its service life and lowering maintenance costs.

[0035] Preferably, such as Figure 2 and Figure 3As shown, in this embodiment, the recess 4 of the first inner wall 101 is formed as a circle. The circular recess 4 can uniformly reflect heat, which is beneficial for maintaining a stable thermal field. The surface of the circular recess 4 has no sharp edges or corners, which can reduce heat loss during the reflection process. When heat is incident on the circular recess 4, most of the heat will be reflected according to the law of reflection, and there will be no excessive heat absorption or scattering due to the presence of edges or corners. This efficient reflection path allows heat to be reflected multiple times in the furnace, increasing the residence time of heat in the furnace and improving the utilization rate of heat. In addition, the circular recess 4 can guide the heat flow to a certain extent. During the operation of the single crystal furnace, the heat flow will flow in the furnace. The circular recess 4 can make the heat flow form a relatively stable flow pattern around it, avoiding heat flow turbulence and helping to maintain the stability of the thermal field in the furnace. A stable thermal field is crucial for the growth of single crystal silicon, which can reduce crystal defects caused by thermal field fluctuations and improve the growth quality of single crystal silicon.

[0036] Preferably, such as Figure 2 and Figure 3 As shown, in this embodiment, the depth of the circular pit 4 is 2-3 mm, and the diameter of the circular pit 4 is 10-15 mm.

[0037] Preferably, such as Figure 2 and Figure 3 As shown, in this embodiment, the distance between two adjacent circular pits 4 is 15-22.5 mm.

[0038] Preferably, such as Figure 2 and Figure 4 As shown, in this embodiment, the recess 4 of the second inner wall 201 is formed in an elliptical shape. Using an elliptical recess 4 can guide airflow in a specific direction (such as along the airflow path), optimize gas distribution, allow the airflow to flow more orderly, and reduce turbulence and eddies. Furthermore, the major axis of the elliptical recess 4 needs to be aligned with the airflow direction to reduce turbulence.

[0039] Preferably, such as Figure 2 and Figure 4 As shown, in the embodiment, the depth of the elliptical pit 4 is 3-4 mm, and the diameter of the elliptical pit 4 is 15-20 mm.

[0040] Preferably, such as Figure 2 and Figure 4 As shown, in this embodiment, the distance between two adjacent elliptical recesses 4 is 22.5-30mm.

[0041] Preferably, such as Figure 2 and Figure 5As shown, in this embodiment, the recess 4 of the third inner wall 301 is formed as either circular or square. The lower furnace cylinder 3 can preferably use a circular recess 4 to ensure efficient heat dissipation; alternatively, a square recess 4 can be used depending on actual needs. The square recess 4 can be used in high heat dissipation density areas within the single crystal furnace to enhance the heat dissipation effect.

[0042] Preferably, such as Figure 2 and Figure 5 As shown, in the embodiment, the depth of the circular or square recess 4 is 4-5mm, the diameter of the circular recess 4 is 20-25mm, and the side length of the square recess 4 is 15-20mm.

[0043] Preferably, such as Figure 2 and Figure 5 As shown, in this embodiment, the distance between two adjacent circular or directional recesses 4 is 30-37.5 mm.

[0044] In practical use, the furnace cover 1 can be arranged with one or two layers of recesses 4 as needed (the total number of recesses 4 is 7-19) to avoid excessively affecting the structural strength. The surface of the recesses 4 in the furnace cover 1 is polished to enhance the heat reflection effect.

[0045] The intermediate furnace section 2 can be arranged with two or three layers of recesses 4 (the total number of recesses 4 is 19-37) to cover the main airflow path area. The major axis of the elliptical recesses 4 in the intermediate furnace section 2 needs to be aligned with the airflow direction to reduce turbulence.

[0046] The lower furnace cylinder 3 can be arranged with three or four layers of pits 4 (the total number of pits 4 is 37-61), with a high density arrangement to enhance heat dissipation. The density of pits 4 can be increased in the lower furnace cylinder 3 near the crystal growth area (such as the bottom) to further improve local heat dissipation efficiency.

[0047] This single-crystal furnace with a recessed heat dissipation structure features a heat dissipation and airflow guiding structure with multiple recesses on its first, second, and third inner walls. This significantly increases the heat dissipation area compared to traditional heat dissipation methods that rely solely on flat heat sinks or simple furnace walls. The recesses in this furnace allow heat to dissipate more quickly and effectively, significantly improving heat dissipation efficiency and reducing heat source consumption, thus meeting environmental protection requirements. The recesses also stabilize the thermal field, providing a more uniform temperature environment for crystal growth. Furthermore, the recesses allow for better control of airflow within the furnace, reducing turbulence or eddies, resulting in more uniform and stable airflow and improved utilization of reactant gases. Due to the optimized heat dissipation and thermal field performance, damage to the single-crystal furnace caused by thermal stress and other issues is reduced, extending its service life and lowering maintenance costs.

[0048] Finally, it should be noted that the above-described embodiments are merely specific implementations of this application, used to illustrate the technical solutions of this application, and not to limit them. The protection scope of this application is not limited thereto. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments, or make equivalent substitutions for some of the technical features, within the technical scope disclosed in this application. Such modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be covered within the protection scope of this application. Therefore, the protection scope of this application should be determined by the protection scope of the claims.

Claims

1. A single-crystal furnace with a recessed heat dissipation structure, characterized in that, The single crystal furnace with a recessed heat dissipation structure includes a furnace cover, a middle furnace cylinder, and a lower furnace cylinder connected end to end in sequence. The inner walls of the furnace cover, the middle furnace cylinder, and the lower furnace cylinder are respectively a first inner wall, a second inner wall, and a third inner wall. The first inner wall, the second inner wall, and the third inner wall are all provided with heat dissipation guiding structures, which include multiple recesses evenly arranged in the vertical and horizontal directions.

2. The single-crystal furnace with a recessed heat dissipation structure according to claim 1, characterized in that, The pit on the first inner wall is circular.

3. The single-crystal furnace with a recessed heat dissipation structure according to claim 2, characterized in that, The circular pit has a depth of 2-3 mm and a diameter of 10-15 mm.

4. The single crystal furnace with a recessed heat dissipation structure according to claim 2, characterized in that, The distance between two adjacent circular pits is 15-22.5 mm.

5. The single-crystal furnace with a recessed heat dissipation structure according to claim 1, characterized in that, The pits on the second inner wall are formed in an elliptical shape.

6. The single-crystal furnace with a recessed heat dissipation structure according to claim 5, characterized in that, The depth of the elliptical recess is 3-4 mm, and the diameter of the elliptical recess is 15-20 mm.

7. The single-crystal furnace with a recessed heat dissipation structure according to claim 5, characterized in that, The distance between two adjacent elliptical recesses is 22.5-30 mm.

8. The single crystal furnace with a recessed heat dissipation structure according to claim 1, characterized in that, The pits on the third inner wall are formed in a circular or square shape.

9. The single crystal furnace with a recessed heat dissipation structure according to claim 8, characterized in that, The depth of the circular or square recess is 4-5 mm, the diameter of the circular recess is 20-25 mm, and the side length of the square recess is 15-20 mm.

10. The single-crystal furnace with a recessed heat dissipation structure according to claim 8, characterized in that, The distance between two adjacent circular or directional pits is 30-37.5 mm.

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