Integrated driving device of hybrid device and new energy automobile
By merging the driver chips of Si IGBT and SiC MOSFET into an integrated driver chip, reducing redundant functional modules, and adopting a dual power supply design, the problems of high cost and large board area of traditional hybrid device drivers are solved, achieving efficient integration and low cost of new energy vehicle drive systems.
Patent Information
- Application Number
- CN202520175314.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-26
- Publication Date
- 2026-02-10
- Estimated Expiration
- 2035-01-26
AI Technical Summary
Traditional hybrid device drive solutions are costly and occupy a large board area, making it difficult to meet the requirements of new energy vehicles for high safety, high performance, low power consumption, low cost, small size and lightweight.
The driver chips for Si IGBT and SiC MOSFET are combined into a single integrated driver chip, redundant functional modules are eliminated, and a dual positive and dual negative voltage power supply design is adopted, with an external buffer to improve signal transmission reliability.
It reduces driving costs, decreases chip size and board area, increases system power density and application flexibility, and enhances immunity and reliability.
Smart Images
Figure CN223899202U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to drive switch technical field, concretely relates to a kind of integrated drive device of hybrid device and new energy automobile. BACKGROUND
[0002] The double-gate structure of the hybrid device increases one gate control compared to traditional power devices, improving the control freedom. The switching timing of Si IGBT and SiC MOSFET inside the hybrid device can be flexibly combined, and the asynchronous turn-on and turn-off of the two devices inside the hybrid device within a reasonable delay range can realize the switching control of the hybrid device. With the development of the marketization of new energy vehicles, the overall vehicle requirements of electric vehicles are high safety, high performance, low power consumption, low cost, small size and lightweight. The overall direction of the corresponding electric drive system is towards integration, and from the component direction, it is towards small size and high power density.
[0003] The traditional hybrid device driving scheme uses two independent drives, usually using CPLD to realize this special driving mode. However, the double-drive scheme will significantly increase the driving cost and board area of the hybrid device. SUMMARY
[0004] Therefore, the utility model provides an integrated drive device of hybrid device and new energy automobile to solve or partially solve the problem of high driving cost and board area of the traditional hybrid device driving scheme.
[0005] In a first aspect, the utility model provides an integrated drive device of hybrid device, and the integrated drive device comprises: an integrated drive chip, the gate of SiC MOSFET and the gate of Si IGBT are connected with the integrated drive chip respectively, and the integrated drive chip is used to control the asynchronous turn-on and turn-off of SiC MOSFET and Si IGBT.
[0006] The integrated drive device of hybrid device provided by the utility model combines two drive chips into one integrated drive chip and cuts the redundant functions, which has a cost advantage compared with two single-gate drive chips, and the chip size and the board area are smaller than two single-gate drive chips.
[0007] In an optional implementation, the integrated drive chip comprises a drive push-pull module, and the gate of SiC MOSFET and the gate of Si IGBT are connected with the drive push-pull module respectively.
[0008] In an optional implementation, the integrated drive chip comprises a first drive push-pull module and a second drive push-pull module, wherein,
[0009] The first drive push-pull module is connected to the gate of the SiC MOSFET in the hybrid device, and the first drive push-pull module is used to perform gate control on the SiC MOSFET;
[0010] The second drive push-pull module is connected to the gate of the Si IGBT in the hybrid device, and the second drive push-pull module is used to perform gate control on the Si IGBT.
[0011] In one optional embodiment, the integrated drive device further includes: a first buffer and a second buffer, wherein,
[0012] When the integrated driver chip includes a drive push-pull module, one end of the first buffer is connected to the drive push-pull module, the other end of the first buffer is connected to the gate of the SiC MOSFET, one end of the second buffer is connected to the drive push-pull module, and the other end of the second buffer is connected to the gate of the Si IGBT.
[0013] When the integrated driver chip includes a first drive push-pull module and a second drive push-pull module, one end of the first buffer is connected to the first drive push-pull module, the other end of the first buffer is connected to the gate of the SiC MOSFET, one end of the second buffer is connected to the first drive push-pull module, and the other end of the second buffer is connected to the gate of the Si IGBT.
[0014] In one optional implementation, the integrated driver chip further includes a common function module, wherein the asynchronous turn-on and turn-off control of SiCMOSFET and Si IGBT share a common function module.
[0015] In one alternative implementation, the integrated driver chip is compatible with both positive and negative voltage power supplies.
[0016] In one optional embodiment, the integrated drive device further includes: a voltage regulator module, wherein,
[0017] When the integrated driver chip includes a drive push-pull module, one end of the voltage regulator module is connected to the drive push-pull module, and the other end of the voltage regulator module is connected to one end of the first buffer and one end of the second buffer.
[0018] When the integrated driver chip includes a first drive push-pull module and a second drive push-pull module, one end of the voltage regulator module is connected to the first drive push-pull module and the second drive push-pull module, and the other end of the voltage regulator module is connected to one end of the first buffer and one end of the second buffer.
[0019] In one optional embodiment, the voltage regulator module includes: a first low-dropout regulator, a second low-dropout regulator, a first Zener diode, and a first power supply, wherein,
[0020] The first low-dropout regulator is connected to the second low-dropout regulator, the positive terminal of the first power supply, the cathode of the first Zener diode, the drive push-pull module, and the first buffer, respectively. The anode of the first Zener diode is connected to the negative terminal of the first power supply, the first buffer, and the second buffer, respectively.
[0021] The second low-dropout regulator is also connected to the drive push-pull module and the second buffer.
[0022] In one optional embodiment, the voltage regulator module includes: a third low-dropout regulator, a fourth low-dropout regulator, a second Zener diode, a third Zener diode, a fourth Zener diode, and a second power supply, wherein,
[0023] The third low-dropout regulator is connected to the fourth low-dropout regulator, the positive terminal of the second power supply, the cathode of the second Zener diode, the cathode of the third Zener diode, the first drive push-pull module, and the first buffer, respectively. The anode of the second Zener diode is connected to the cathode of the fourth Zener diode and the first buffer, respectively. The anode of the fourth Zener diode is connected to the anode of the third Zener diode, the negative terminal of the second power supply, the second drive push-pull module, and the second buffer, respectively.
[0024] The fourth low-dropout regulator is also connected to the second drive push-pull module and the second buffer.
[0025] Secondly, this utility model provides a new energy vehicle, which includes: an integrated drive device of the hybrid device of the first aspect above or any corresponding embodiment.
[0026] The present invention provides a new energy vehicle that, by adopting an integrated drive device, highly integrates the carbon hybrid drive system of the new energy electric vehicle, effectively improving the system power density. Attached Figure Description
[0027] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0028] Figure 1 This is a schematic diagram of a dual-gate control scheme in related technologies;
[0029] Figure 2 This is a schematic diagram of a low-voltage control circuit in related technologies;
[0030] Figure 3 This is a schematic diagram of an integrated drive device for a hybrid device according to an embodiment of the present invention;
[0031] Figure 4 This is yet another schematic diagram of an integrated drive device for a hybrid device according to an embodiment of the present utility model;
[0032] Figure 5 This is yet another schematic diagram of an integrated drive device for a hybrid device according to an embodiment of the present utility model;
[0033] Figure 6 This is yet another schematic diagram of an integrated drive device for a hybrid device according to an embodiment of the present utility model;
[0034] Figure 7 This is yet another schematic diagram of an integrated drive device for a hybrid device according to an embodiment of the present utility model;
[0035] Figure 8 This is yet another schematic diagram of an integrated drive device for a hybrid device according to an embodiment of the present invention. Detailed Implementation
[0036] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0037] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0038] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can also refer to the internal connection of two components; and they can refer to a wireless connection or a wired connection. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0039] Furthermore, the technical features involved in the different embodiments of this utility model described below can be combined with each other as long as they do not conflict with each other.
[0040] Traditional hybrid device driving solutions employ two independent drivers, using a CPLD (Complex Programmable Logic Device) to implement this special driving mode. This dual-driver approach significantly increases the driving cost and complexity of hybrid devices, reducing their overall cost-effectiveness.
[0041] like Figure 1 As shown, the dual-gate control module consists of two driver chips. These two driver chips contain several overlapping common functional modules. These common functional modules include a reference source, ASC (Analog-to-Digital Converter), ADC (Active Stability Control) detection, and Desat (desaturation protection) detection. Since driving one hybrid device bridge arm requires two driver chips, the chip body and its surrounding circuitry occupy a large board area. Furthermore, the fault detection, protection unit, reference power supply, and analog sampling functions of the driver chip can be implemented with only one circuit on a single hybrid device bridge arm; two chips result in system design redundancy and a high failure rate. Moreover, conventional designs that meet the drive capability threshold to satisfy most market projects have high unit costs; the requirement of two chips for hybrid device drives further increases the cost.
[0042] Furthermore, due to the architecture, the low-voltage control signal leads between the two driver chips are relatively long, such as... Figure 2 As shown, using two driver chips to drive the PWM signal generated by the controller requires a relatively long trace. This type of low-voltage signal has weak current-driving capability and is easily affected by external magnetic fields.
[0043] To address the aforementioned problems, this invention provides an integrated driving device for hybrid devices. For example... Figure 3As shown, the integrated driving device includes an integrated driving chip, which is connected to the gate of the SiC MOSFET and the gate of the Si IGBT respectively. The integrated driving chip is used to control the asynchronous turn-on and turn-off of the SiC MOSFET and the Si IGBT.
[0044] Specifically, this embodiment of the invention combines two driver chips into a single integrated driver chip and eliminates redundant functions, such as retaining only one set of reference source, ASC, ADC, and Desat detection modules. The integrated driver chip performs gate control on the Si IGBT and SiC MOSFET respectively, enabling asynchronous turn-on and turn-off control of the two devices within a reasonable delay range. Due to the elimination of redundant functional modules, the integrated driver chip has a cost advantage compared to two single-gate driver chips, and its chip size occupies a smaller board area compared to two single-gate driver chips.
[0045] This invention provides an integrated driver device for hybrid devices, which combines two driver chips into one integrated driver chip and eliminates redundant functions. Compared with two single-gate driver chips, it has a greater cost advantage, and the chip size occupies less board area. It can effectively improve system power density and reduce drive costs. Furthermore, this integrated driver device has the advantages of small size, low cost, strong scalability and development, and high reliability.
[0046] In one alternative implementation, such as Figure 3 As shown, the integrated driver chip includes a drive push-pull module, which is connected to the gate of the SiC MOSFET and the gate of the Si IGBT, respectively.
[0047] Specifically, such as Figure 3 As shown, the integrated driver chip incorporates a push-pull module to control the gates of Si IGBTs and SiC MOSFETs. While this approach reduces cost and chip size, the requirement for both Si IGBTs and SiC MOSFETs to use the same negative voltage as a reference ground limits the application flexibility of the integrated driver chip.
[0048] In one alternative implementation, such as Figure 4 As shown, the integrated driver chip includes a first drive push-pull module and a second drive push-pull module. The first drive push-pull module is connected to the gate of the SiC MOSFET in the hybrid device and is used for gate control of the SiC MOSFET. The second drive push-pull module is connected to the gate of the Si IGBT in the hybrid device and is used for gate control of the Si IGBT.
[0049] Specifically, such as Figure 3 and Figure 4 As shown, the integrated driver chip can be configured with one or two push-pull modules, respectively, to achieve gate control of Si IGBTs and SiC MOSFETs. Figure 4 As shown, when the integrated driver chip is configured with two push-pull modules, the first and second push-pull modules are independent modules, respectively controlling the gates of the SiC MOSFET and Si IGBT, achieving asynchronous turn-on and turn-off control of the two devices within a reasonable delay range. Due to the reduction of redundant functional modules, the integrated driver chip has a cost advantage compared to two single-gate driver chips, and its chip size occupies a smaller board area. Furthermore, the use of two independent push-pull modules increases the application flexibility of the integrated driver chip.
[0050] In one alternative implementation, such as Figure 5 and Figure 6 As shown, the integrated drive unit also includes: a first buffer and a second buffer.
[0051] Specifically, such as Figure 5 As shown, when the integrated driver chip includes a drive push-pull module, one end of the first buffer is connected to the drive push-pull module, the other end of the first buffer is connected to the gate of the SiC MOSFET, one end of the second buffer is connected to the drive push-pull module, and the other end of the second buffer is connected to the gate of the Si IGBT.
[0052] like Figure 6 As shown, when the integrated driver chip includes a first driver push-pull module and a second driver push-pull module, one end of the first buffer is connected to the first driver push-pull module, and the other end of the first buffer is connected to the gate of the SiC MOSFET. One end of the second buffer is connected to the first driver push-pull module, and the other end of the second buffer is connected to the gate of the Si IGBT.
[0053] Furthermore, compared to single-gate control chips, integrated driver chips actively reduce the current capability of the push-pull drive module, lower the capability of internal power push-pull devices, further reduce the size of the integrated driver chip, and use external buffers for flexible project matching, with external buffers supplementing its capability. Since external buffers require several hundred mA of current drive, the original long-distance low-voltage routing can be changed to high-voltage transmission, increasing the current carrying capacity from a few milliamps to several hundred milliamps. Therefore, the reliability of signal transmission between the push-pull drive module and the external buffer is improved, and the anti-interference capability is enhanced. In this embodiment, the external buffer can be designed individually for different projects, increasing project flexibility. The external buffer not only solves the problem of poor low-voltage anti-interference but also further reduces the chip size.
[0054] In one alternative implementation, such as Figure 7 and Figure 8 The integrated drive unit shown also includes a voltage regulator module.
[0055] Specifically, such as Figure 7 As shown, when the integrated driver chip includes a push-pull driver module, one end of the voltage regulator module is connected to the push-pull driver module, and the other end of the voltage regulator module is connected to one end of the first buffer and one end of the second buffer. The first buffer sends the control signal Gate1 to the gate of the SiC MOSFET. The second buffer sends the control signal Gate2 to the gate of the SiIGBT.
[0056] Specifically, such as Figure 8 As shown, when the integrated driver chip includes a first drive push-pull module and a second drive push-pull module, one end of the voltage regulator module is connected to the first drive push-pull module and the second drive push-pull module, and the other end of the voltage regulator module is connected to one end of the first buffer and one end of the second buffer.
[0057] Furthermore, to accommodate the negative voltage turn-off characteristics of hybrid devices, the integrated driver chip is specifically designed to be compatible with both positive and negative voltage power supplies. Due to the high crosstalk of SI IGBTs, a lower negative voltage is designed; while SiC MOSFETs have high negative voltage limits, thus requiring a safer negative voltage design. For example... Figure 7 and 8 As shown, the design of dual negative voltage driver chips paired with a series LDO (Low-dropout regulator) significantly increases the module's flexibility in safety applications. By designing the integrated driver chip to be compatible with both dual positive and dual negative voltage power supply methods, it can adapt to more application scenarios involving mixed devices. The integrated driver chip's compatibility with both dual positive and dual negative voltage power supply ensures module safety while expanding the module's application capabilities.
[0058] like Figure 7 As shown, when the integrated driver chip includes a push-pull driver module, the voltage regulator module includes: a first low-dropout regulator LDO1, a second low-dropout regulator LDO2, a first Zener diode ZD1, and a first power supply VCC1. The first low-dropout regulator LDO1 is connected to the second low-dropout regulator LDO2, the positive terminal of the first power supply VCC1, the cathode of the first Zener diode ZD1, the push-pull driver module, and the first buffer. The anode of the first Zener diode ZD1 is connected to the negative terminal of the first power supply VCC1, the first buffer, and the second buffer. The second low-dropout regulator LDO2 is also connected to the push-pull driver module and the second buffer.
[0059] like Figure 8 As shown, when the integrated driver chip includes a first drive push-pull module and a second drive push-pull module, the voltage regulator module includes: a third low-dropout regulator LDO3, a fourth low-dropout regulator LDO4, a second Zener diode ZD2, a third Zener diode ZD3, a fourth Zener diode ZD4, and a second power supply VCC2. The third low-dropout regulator LDO3 is connected to the fourth low-dropout regulator LDO4, the positive terminal of the second power supply VCC2, the cathode of the second Zener diode ZD2, the cathode of the third Zener diode ZD3, the first drive push-pull module, and the first buffer. The anode of the second Zener diode ZD2 is connected to the cathode of the fourth Zener diode ZD4, the first drive push-pull module, and the first buffer. The anode of the fourth Zener diode ZD4 is connected to the anode of the third Zener diode ZD3, the negative terminal of the second power supply VCC2, the second drive push-pull module, and the second buffer. The fourth low-dropout regulator LDO4 is also connected to the second drive push-pull module and the second buffer.
[0060] This utility model provides a new energy vehicle, which includes the integrated drive device described in the above embodiments.
[0061] The present invention provides a new energy vehicle that, by adopting an integrated drive device, highly integrates the carbon hybrid drive system of the new energy electric vehicle, effectively improving the system power density.
[0062] Although embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations all fall within the scope defined by the appended claims.
Claims
1. An integrated driving device for hybrid devices, characterized in that, The integrated driving device includes an integrated driving chip, which is connected to the gate of the SiC MOSFET and the gate of the Si IGBT respectively. The integrated driving chip is used to control the asynchronous turn-on and turn-off of the SiC MOSFET and the Si IGBT.
2. The integrated drive device for the hybrid device according to claim 1, characterized in that, The integrated driver chip includes a drive push-pull module, which is connected to the gate of the SiC MOSFET and the gate of the SiIGBT, respectively.
3. The integrated drive device for the hybrid device according to claim 1, characterized in that, The integrated driver chip includes a first drive push-pull module and a second drive push-pull module, wherein... The first drive push-pull module is connected to the gate of the SiC MOSFET in the hybrid device, and the first drive push-pull module is used to perform gate control on the SiC MOSFET; The second drive push-pull module is connected to the gate of the Si IGBT in the hybrid device, and the second drive push-pull module is used to perform gate control on the Si IGBT.
4. The integrated drive device for the hybrid device according to claim 1 or 2, characterized in that, The integrated drive device further includes: a first buffer and a second buffer, wherein... When the integrated driver chip includes a drive push-pull module, one end of the first buffer is connected to the drive push-pull module, the other end of the first buffer is connected to the gate of the SiC MOSFET, one end of the second buffer is connected to the drive push-pull module, and the other end of the second buffer is connected to the gate of the Si IGBT. When the integrated driver chip includes a first drive push-pull module and a second drive push-pull module, one end of the first buffer is connected to the first drive push-pull module, and the other end of the first buffer is connected to the gate of the SiC MOSFET. One end of the second buffer is connected to the first drive push-pull module, and the other end of the second buffer is connected to the gate of the SiIGBT.
5. The integrated drive device for the hybrid device according to claim 1 or 2, characterized in that, The integrated driver chip also includes a common function module, wherein the asynchronous turn-on and turn-off control of SiC MOSFET and Si IGBT share a common function module.
6. The integrated drive device for the hybrid device according to claim 4, characterized in that, The integrated driver chip is compatible with both positive and negative voltage power supplies.
7. The integrated drive device for hybrid devices according to claim 6, characterized in that, The integrated drive device further includes: a voltage regulator module, wherein... When the integrated driver chip includes a drive push-pull module, one end of the voltage regulator module is connected to the drive push-pull module, and the other end of the voltage regulator module is connected to one end of the first buffer and one end of the second buffer. When the integrated driver chip includes a first drive push-pull module and a second drive push-pull module, one end of the voltage regulator module is connected to the first drive push-pull module and the second drive push-pull module, and the other end of the voltage regulator module is connected to one end of the first buffer and one end of the second buffer.
8. The integrated drive device for the hybrid device according to claim 7, characterized in that, The voltage regulation module includes: a first low-dropout regulator, a second low-dropout regulator, a first Zener diode, and a first power supply. The first low-dropout regulator is connected to the second low-dropout regulator, the positive terminal of the first power supply, the cathode of the first Zener diode, the drive push-pull module, and the first buffer, respectively. The anode of the first Zener diode is connected to the negative terminal of the first power supply, the first buffer, and the second buffer, respectively. The second low-dropout regulator is also connected to the drive push-pull module and the second buffer.
9. The integrated drive device for the hybrid device according to claim 7, characterized in that, The voltage regulator module includes: a third low-dropout regulator, a fourth low-dropout regulator, a second Zener diode, a third Zener diode, a fourth Zener diode, and a second power supply. The third low-dropout regulator is connected to the fourth low-dropout regulator, the positive terminal of the second power supply, the cathode of the second Zener diode, the cathode of the third Zener diode, the first drive push-pull module, and the first buffer, respectively. The anode of the second Zener diode is connected to the cathode of the fourth Zener diode and the first buffer, respectively. The anode of the fourth Zener diode is connected to the anode of the third Zener diode, the negative terminal of the second power supply, the second drive push-pull module, and the second buffer, respectively. The fourth low-dropout regulator is also connected to the second drive push-pull module and the second buffer.
10. A new energy vehicle, characterized in that, The new energy vehicle includes: an integrated drive device for the hybrid device as described in any one of claims 1-9.