Coating equipment

Abstract

The utility model belongs to the technical field of solar cells, and discloses coating equipment. The coating equipment comprises a first process cavity, an isolation cavity, a second process cavity and a gas analyzer, the isolation cavity is arranged between the first process cavity and the second process cavity, a first cavity isolation valve is arranged between the first process cavity and the isolation cavity, a second cavity isolation valve is arranged between the isolation cavity and the second process cavity, and the gas analyzer is arranged between the first process cavity and the second process cavity. The isolation cavity is provided with a gas inlet, and the gas inlet is used for introducing inert gas into the isolation cavity. By means of the coating equipment, an excellent process which considers the low damage characteristic of atomic layer deposition to the substrate and the high efficiency characteristic of physical vapor deposition is achieved, and the mass production capacity can be improved on the basis that it is guaranteed that the substrate is not damaged and the process is stable.

Description

TECHNICAL FIELD

[0001] The utility model relates to solar cell technical field especially relates to a coating equipment. BACKGROUND

[0002] ALD (Atomic Layer Deposition, atomic layer deposition) technology mainly relies on the surface saturation reaction of precursor on the substrate surface The chemical adsorption and desorption process generated by this mechanism can form a single atomic layer deposition. This technology deposits material in the form of a single atomic layer on the substrate surface in a layer-by-layer manner. Its remarkable feature is that by simply controlling the number of reaction cycles, the thickness of the film can be accurately controlled, thereby preparing atomic layer films with different thicknesses.

[0003] This feature allows ALD technology to minimize damage to the substrate while ensuring film quality. However, despite the significant achievements of ALD equipment in film thickness uniformity and process stability, its productivity has always been a shortcoming in this technical field. The traditional solution is mostly to expand the equipment size and improve single furnace output, but doing so not only cannot effectively improve productivity, but may exacerbate process instability, leading to increased film layer uniformity.

[0004] Therefore, there is an urgent need for a coating equipment to solve the above technical problems. UTILITY MODEL CONTENT

[0005] The utility model aims at providing a coating equipment that can improve mass production capacity while ensuring no damage to the substrate and ensuring process stability.

[0006] To achieve this purpose, the utility model adopts the following technical solutions:

[0007] The coating equipment is used for coating the substrate, comprising a first process cavity, an isolation cavity, a second process cavity and a gas analyzer. The substrate can be transported into the first process cavity for atomic layer deposition. The isolation cavity is arranged downstream of the first process cavity, and a first cavity isolation valve is arranged between the first process cavity and the isolation cavity. The second process cavity is arranged downstream of the isolation cavity, and the substrate can be transported into the second process cavity through the isolation cavity for physical vapor deposition. A second cavity isolation valve is arranged between the isolation cavity and the second process cavity. The isolation cavity is provided with a gas inlet, and the gas inlet is used for introducing inert gas into the isolation cavity.

[0008] The coating equipment has the advantages that the isolation cavity in the coating equipment can effectively prevent gas pollution, guarantee the stability of the physical vapor deposition process, so that the first film can be formed on the substrate in the atomic layer deposition mode, and then the first film is used as a seed layer to form the second film in the physical vapor deposition mode.

[0009] In some embodiments, a heating plate and / or a gas distribution plate are arranged in the isolation cavity, the heating plate is used for heating the substrate, and the gas distribution plate is communicated with the gas inlet. The heating plate can be used for heating the substrate, thereby playing a heat preservation and preheating effect. The gas distribution plate is communicated with the gas inlet, and the inert gas can be uniformly distributed in the isolation cavity, which is beneficial to reducing the atomic layer deposition process gas residue.

[0010] In some embodiments, the coating equipment comprises a purging device, an outlet pipe of the purging device is communicated with the gas inlet, and the inert gas is provided to the isolation cavity through the outlet pipe. At least two gas inlets are arranged on the isolation cavity along the movement direction of the substrate, and the gas inlets are communicated with the outlet pipe of the purging device. The inert gas can be input into the isolation cavity along the movement direction of the substrate through the gas inlets, so as to purify the atomic layer deposition process gas.

[0011] In some embodiments, the second process cavity has a coating process cavity, and the coating equipment further comprises an air inlet assembly, a first target material, a second target material and a sputtering power supply. The air inlet assembly is communicated with the coating process cavity and can deliver process gas to the coating process cavity. The first target material is arranged in the coating process cavity, and the second target material is also arranged in the coating process cavity and is spaced apart from the first target material in the horizontal direction. The sputtering power supply has a first output end and a second output end, the first output end is electrically connected with the first target material, and the second output end is electrically connected with the second target material. The sputtering power supply can provide alternating current to the first target material and the second target material, so that the first target material and the second target material alternately serve as cathode and anode, and a processing area for coating the substrate is formed below the first target material and the second target material.

[0012] In some embodiments, when the sputtering power supply provides an alternating current to the first target and the second target, an alternating electric field is formed between the first target and the second target, the alternating electric field can ionize the process gas into plasma, the plasma impacts the first target and the second target, and the first target and the second target can sputter target particles. The first target has a first cavity inside, the second target has a second cavity inside, and two groups of magnet assemblies are arranged in the first cavity and the second cavity respectively and configured to guide the target particles and the plasma. The magnet assembly includes at least three magnets arranged in sequence, each magnet has oppositely arranged first and second ends, the arrangement direction of the at least three magnets is crossed with the direction in which the first end of each magnet points to the second end, and the polarities of the first and second ends of each magnet are opposite. The at least three magnets include at least one first magnet, at least one second magnet and at least one third magnet, the second magnet is arranged between the first magnet and the third magnet, the polarity of the first end of the first magnet is the same as the polarity of the first end of the third magnet, and the polarity of the first end of the first magnet is opposite to the polarity of the first end of the second magnet, so that the magnet assembly can guide the target particles and the plasma in different regions, and most of the sputtered particles falling on the substrate in the first process processing region have relatively low energy, thereby reducing the physical damage and thermal damage to the substrate.

[0013] In some embodiments, a gas analyzer is connected to the isolation chamber, and the gas analyzer is used to analyze the gas components in the isolation chamber. The isolation chamber is provided with a mounting port, and the gas analyzer is provided with a detection part which can be inserted into the isolation chamber through the mounting port, so as to realize the analysis of the gas components in the isolation chamber.

[0014] In some embodiments, a plurality of transmission rollers are arranged in the isolation chamber along the movement direction of the substrate, the transmission rollers are used to support a carrier plate, the carrier plate is used to support the substrate, and the transmission rollers can rotate to transmit the carrier plate, thereby realizing the carrying of the substrate. A transmission system and a driving system are arranged outside the isolation chamber, the transmission system includes a transmission belt and a plurality of transmission shafts, the transmission shafts pass through the isolation chamber and are correspondingly and transmissionally connected to the transmission rollers, the transmission belt is transmissionally connected to the transmission shafts and the driving system, and the driving system can drive the transmission rollers to rotate through the transmission system, thereby realizing the transmission of the carrier plate.

[0015] In some embodiments, the upstream of the first process chamber is further provided with a loading chamber and a heating chamber, the loading chamber is used to place the substrate into the coating equipment, and the heating chamber is used to heat the substrate. The loading chamber, the heating chamber and the first process chamber are connected in sequence. When the coating equipment is used, the substrate can be first placed into the coating equipment through the loading chamber, then heated to a preset temperature through the heating chamber, so as to meet the requirements of the atomic layer deposition process, and then transported into the first process chamber, thereby improving the stability of the atomic layer deposition and the film forming quality.

[0016] In some embodiments, the coating equipment comprises a plurality of heating cavities, the plurality of heating cavities are sequentially connected, and the substrate can be sequentially transported through the plurality of heating cavities. The coating equipment further comprises a plurality of first process cavities, the plurality of first process cavities are sequentially connected, and the third cavity isolation valve is arranged between the plurality of first process cavities. The coating equipment further comprises a plurality of second process cavities, the plurality of second process cavities are sequentially connected. The arrangement of the plurality of heating cavities, the plurality of first process cavities and the plurality of second process cavities can improve the coating efficiency of the coating equipment.

[0017] In some embodiments, the upstream of the first process cavity is further provided with a loading cavity and a heating cavity. The loading cavity is used to place the carrier plate into the coating equipment, and the carrier plate carries the substrate. The heating cavity is used to preheat the substrate. The loading cavity, the heating cavity and the first process cavity are sequentially connected. When the coating equipment is used, the substrate can be placed into the coating equipment through the loading cavity first, and then the substrate is heated to a preset temperature through the heating cavity, so that it meets the requirements of the atomic layer deposition process, and then is transported into the first process cavity, thereby improving the stability of the atomic layer deposition and the film forming quality. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a structural schematic view of the coating equipment provided by the utility model;

[0019] Figure 2 is a schematic view of the first film and the second film in the utility model;

[0020] Figure 3 is a structural schematic view of the isolation cavity provided by the utility model;

[0021] Figure 4 is a structural schematic view of the first process cavity provided by the utility model;

[0022] Figure 5 is Figure 4 the local enlarged view of P in the utility model;

[0023] Figure 6 is a structural schematic view of the magnet assembly in the utility model;

[0024] Figure 7 is a process flow chart of the use of the coating equipment in the utility model;

[0025] Figure 8 is a structural schematic view of the perovskite battery made of the coating equipment.

[0026] In the drawings:

[0027] 1, loading cavity; 2, heating cavity; 3, first process cavity; 301, third cavity isolation valve; 4, isolation cavity; 401, first cavity isolation valve; 402, second cavity isolation valve; 403, shell; 404, cover; 405, heating plate; 406, uniform gas plate; 407, transmission roller; 408, transmission shaft; 409, transmission belt; 410, gas analyzer; 411, gas inlet; 5, second process cavity; 51, first target material; 510, first cavity; 52, second target material; 520, second cavity; 53, gas inlet assembly; 54, sputtering power supply; 55, magnet assembly; 5501, first end; 5502, second end; 551, first magnet; 552, second magnet; 553, third magnet; 501, molecular pump assembly; 502, cathode assembly; 6, buffer cavity; 7, unload buffer cavity; 8, unloading cavity; 9, purging device;

[0028] 10, carrier plate;

[0029] 100, substrate; 101, first film; 102, second film. DETAILED DESCRIPTION

[0030] The utility model will be described in further detail below in combination with the drawings and examples. It can be understood that the specific examples described here are only used to explain the utility model, and not to limit the utility model. In addition, it should be noted that, in order to facilitate the description, only the part related to the utility model is shown in the drawings, not all structures.

[0031] In the description of the utility model, unless otherwise explicitly specified and limited, the terms "connected", "connected", "fixed" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication or interaction relationship between two elements. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0032] In the utility model, unless otherwise explicitly specified and limited, the "upper" or "lower" of the first feature in the second feature can include that the first and second features are in direct contact, or the first and second features are not in direct contact but are in contact through another feature between them. Moreover, the "upper", "upper" and "upper" of the first feature in the second feature include that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The "below", "below" and "below" of the first feature in the second feature include that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0033] In the description of the present embodiment, the terms "upper", "lower", "right", "left" and the like orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second" are only used to distinguish in description, and have no special meaning.

[0034] The following will be described according to the accompanying Figure 1 to the accompanying Figure 8 The present utility model provides a coating equipment.

[0035] As Figures 1 to 3 shown, in the present embodiment, the coating equipment is connected by a plurality of cavities, including a first process cavity 3, an isolation cavity 4 and a second process cavity 5. Among them, the first process cavity 3 is arranged upstream of the isolation cavity 4, the second process cavity 5 is arranged downstream of the isolation cavity 4, the substrate 100 can be placed on the carrier plate 10, and sequentially move through the first process cavity 3, the isolation cavity 4 and the second process cavity 5. And when the substrate 100 moves into the first process cavity 3, the coating equipment can perform atomic layer deposition on the substrate 100 and form a first film 101; when the substrate 100 moves into the second process cavity 5, the coating equipment can perform physical vapor deposition on the substrate 100, thereby forming a second film 102 on the first film 101.

[0036] As Figure 1 , Figure 3 shown, the isolation cavity 4 is connected between the first process cavity 3 and the second process cavity 5, a first cavity isolation valve 401 is arranged between the isolation cavity 4 and the first process cavity 3, and the first cavity isolation valve 401 can switch between the communication state and the isolation state between the isolation cavity 4 and the first process cavity 3. A second cavity isolation valve 402 is arranged between the isolation cavity 4 and the second process cavity 5, and the second cavity isolation valve 402 can switch between the communication state and the isolation state between the isolation cavity 4 and the second process cavity 5. And the isolation cavity 4 is also connected with a purge device 9, and the purge device 9 is used to provide inert gas into the isolation cavity 4.

[0037] When using this coating equipment, the substrate 100 is first transported to the first process chamber 3. Through atomic layer deposition, a first film 101 with good uniformity and stability can be formed. Then, the first chamber isolation valve 401 is opened, and the first process chamber 3 and the isolation chamber 4 are connected from the isolated state, thereby transporting the substrate 100 with the first film 101 formed to the isolation chamber 4. After the transport is completed, the first chamber isolation valve 401 is closed, so that the isolation chamber 4 is isolated from the first process chamber 3 and the second process chamber 5, and is then purged. During purging, inert gas is introduced into the isolation chamber 4 through the purging device 9 to clean the atomic layer deposition process gas. When the residual level is low and will not affect subsequent processes, the second chamber isolation valve 402 is opened, and the second process chamber 5 and the isolation chamber 4 are connected from the isolated state, transporting the substrate 100 with the first film 101 formed to the second process chamber. After the delivery is completed, the second chamber isolation valve 402 is closed, and the second process chamber 5 and the isolation chamber 4 are isolated again. Physical vapor deposition can then be performed through the molecular pump assembly 501 and the cathode assembly 502 without interference from the previous process. That is, the second film 102 is formed on the first film 101 with a higher efficiency than atomic layer deposition.

[0038] The isolation chamber 4 in the coating equipment effectively prevents gas contamination and ensures the stability of the physical vapor deposition process. This allows for the formation of a first film 101 on the substrate 100 using atomic layer deposition (ALD), followed by the use of ALD as a seed layer to form a second film 102 via PVA. Therefore, this coating equipment achieves a superior process that balances the low-damage characteristics of ALD on the substrate 100 with the high efficiency of PVA, increasing mass production capacity while ensuring no damage to the substrate and process stability.

[0039] Specifically, such as Figure 1 As shown, in this embodiment, a loading chamber 1 and a heating chamber 2 are also provided upstream of the first process chamber 3. The loading chamber 1 is used to place the carrier plate 10 into the coating equipment, and the carrier plate 10 carries the aforementioned substrate 100. The heating chamber 2 is used to preheat the substrate 100. The loading chamber 1, the heating chamber 2, and the first process chamber 3 are connected in sequence. When using the coating equipment, the substrate 100 can be placed into the coating equipment first through the loading chamber 1, and then the substrate 100 can be heated to a preset temperature through the heating chamber 2 to meet the requirements of the atomic layer deposition process before being transported into the first process chamber 3, thereby improving the stability of atomic layer deposition and the film quality.

[0040] Preferably, in the present embodiment, the coating equipment comprises a plurality of heating cavities 2, a plurality of first process cavities 3 and a plurality of second process cavities 5. The plurality of heating cavities 2 are connected in sequence and arranged upstream of the first process cavities 3; the plurality of first process cavities 3 are connected in sequence and arranged between the heating cavities 2 and the second process cavities 5; and the plurality of second process cavities 5 are connected in sequence and arranged downstream of the first process cavities 3. By arranging the plurality of heating cavities 2, the plurality of first process cavities 3 and the plurality of second process cavities 5, a larger heating area, a first process processing area and a second process processing area can be correspondingly formed, so that the coating equipment can be suitable for a carrier plate 10 with a larger supporting area, and thus the coating equipment can process a larger number of substrates 100 at the same time. Optionally, a third cavity isolation valve 301 is further arranged between any two adjacent first process cavities 3. By selectively closing and opening the third cavity isolation valve 301, the size of the first process processing area can be changed, so that a first process processing area with a suitable size can be realized according to the specific supporting area of the carrier plate 10, and the reduction of coating efficiency and the waste of target material caused by the first process processing area being much larger than the area of the carrier plate 10 can be avoided.

[0041] In addition, by arranging the plurality of heating cavities 2, a temperature gradient control can be formed in the plurality of heating cavities 2, so that the substrate 100 experiences a gradual heating process instead of being directly heated from room temperature to high temperature. This gradual temperature change helps to reduce thermal stress caused by rapid heating or cooling, thereby avoiding deformation, cracking or other structural damage of the substrate.

[0042] Meanwhile, since the entire coating process has continuity, the heating time of the substrate in each heating cavity 2 is limited. Therefore, in order to enable the substrate to be coated at a higher preset temperature, a plurality of heating cavities 2 need to be arranged, so that the heating time of the substrate in each heating cavity 2 is not longer than the preset time, and the substrate can reach the preset temperature when it reaches the first process cavity 3. Similarly, when a larger film thickness needs to be formed, the coating time of the substrate in each first process cavity 3 and each second process cavity 5 also cannot be too long. Therefore, in order to ensure that the coating time of the substrate in each first process cavity 3 and each second process cavity 5 meets the process requirements and achieves the preset film thickness, a plurality of first process cavities 3 and a plurality of second process cavities 5 need to be arranged respectively. In some embodiments, by arranging the plurality of heating cavities 2, the plurality of first process cavities 3 or the plurality of second process cavities 5, the waiting time of the substrate and the substrate waiting for heating or coating process can also be correspondingly reduced, thereby improving the production capacity of the entire production line.

[0043] Continuing to refer to Figure 1As shown, downstream of the second process cavity 5, there are further provided a buffer cavity 6, an unloading buffer cavity 7 and an unloading cavity 8. The unloading cavity 8 is used to take out the substrate 100 from the coating equipment, the unloading buffer cavity 7 is used to reduce the temperature of the substrate 100, and the buffer cavity 6 is used to realize process buffering of the physical vapor deposition. The second process cavity 5, the buffer cavity 6, the unloading buffer cavity 7 and the unloading cavity 8 are sequentially connected. When the coating equipment is used, during the process of physical vapor deposition, the buffer cavity 6 and the second process cavity 5 are in communication, process buffering can be performed, that is, the substrate 100 located on the carrier plate 10 can be uniformly processed, so that the plurality of substrates 100 located on the carrier plate 10 can all form the second film 102 with the same thickness. The unloading buffer cavity 7 is used to slowly cool the substrate 100, so as to avoid negative effects caused by a large difference between the temperature of the substrate 100 and the ambient temperature when the substrate 100 is directly unloaded. The unloading cavity 8 is a position of the coating equipment for outputting the substrate 100. The substrate 100 can be taken out from the coating equipment by an automatic taking-out device, and then subsequent processes can be performed.

[0044] As shown in Figure 3 As shown, the upper side and the lower side of the isolation cavity 4 are both provided with a gas inlet 411. The gas inlet 411 is in communication with the gas outlet pipe of the purging device 9. Inert gas can enter the isolation cavity 4 from the upper side and the lower side of the isolation cavity 4 at the same time, so as to purify the atomic layer deposition process gas entering the isolation cavity 4 through the first cavity isolation valve 401.

[0045] Optionally, along the movement direction of the substrate 100, at least two gas inlets 411 are arranged on the isolation cavity 4, so as to purify the atomic layer deposition process gas along the length direction of the isolation cavity, and reduce the residue of the atomic layer deposition process gas.

[0046] Preferably, along the movement direction of the substrate 100, at least two gas inlets 411 are arranged on the upper side and the lower side of the isolation cavity 4. Such an arrangement can enable the inert gas to fill in the isolation cavity 4, so as to achieve a good and thorough cleaning effect, and further avoid residue of the atomic layer deposition process gas.

[0047] Further, the isolation cavity 4 is further provided with a gas distribution plate 406. The gas distribution plate 406 is in communication with the gas inlet 411, and can uniformly spread the inert gas in the isolation cavity 4, which is beneficial to reduce the residue of the atomic layer deposition process gas. Optionally, the isolation cavity 4 is further provided with a heating plate 405. The heating plate 405 can be used to heat the substrate 100, so as to achieve the effects of heat preservation and preheating.

[0048] Continuing to refer to Figure 3As shown, the isolation chamber 4 is also provided with a gas analyzer 410, which is capable of analyzing the gas components in the isolation chamber 4, so as to check or detect the residual degree of the process gas required for the atomic layer deposition in the isolation chamber 4. Specifically, the isolation chamber 4 is provided with a mounting port, and the gas analyzer 410 is provided with a detection part which is capable of being inserted into the isolation chamber 4 through the mounting port, so as to realize the analysis of the gas components in the isolation chamber 4.

[0049] A plurality of transmission rollers 407 are arranged in the isolation chamber 4 along the movement direction of the substrate 100, and the transmission rollers 407 are used to support the carrier plate 10 and are capable of rotating to transmit the carrier plate 10 to the second process chamber 5. A transmission system and a driving system are arranged outside the isolation chamber 4, the transmission system includes a transmission belt 409 and a plurality of transmission shafts 408, the transmission shafts 408 are arranged through the housing 403 and are correspondingly and transmissionally connected to the transmission rollers 407, the transmission belt 409 is transmissionally connected to the transmission shafts 408 and the driving system, and the driving system is capable of driving the transmission rollers 407 to rotate through the transmission system.

[0050] Preferably, the isolation chamber 4 includes the housing 403 and a cover 404 which is openably covered on the housing 403, so as to facilitate the maintenance of the internal equipment of the isolation chamber 4.

[0051] As shown in Figure 4 , Figure 5 In some embodiments, the second process chamber 5 has a coating process chamber, and the coating device further includes a gas inlet assembly 53, a first target material 51, a second target material 52 and a sputtering power supply 54. The gas inlet assembly 53 is in communication with the coating process chamber and is capable of conveying the process gas required for the atomic layer deposition to the coating process chamber. The first target material 51 is arranged in the coating process chamber, and the second target material 52 is also arranged in the coating process chamber and is spaced apart from the first target material 51 in the horizontal direction. The sputtering power supply 54 has a first output end and a second output end, the first output end is electrically connected to the first target material 51, and the second output end is electrically connected to the second target material 52. The sputtering power supply 54 is capable of providing the first target material 51 and the second target material 52 with alternating current, so that the first target material 51 and the second target material 52 alternately serve as cathode and anode, and a processing area for coating the substrate 100 is formed below the first target material 51 and the second target material 52. Optionally, the first process chamber 3 is also provided with the transmission roller 407, so as to transport the carrier plate 10 through the processing area, realize the coating and conveying of the substrate 100.

[0052] It should be noted that, since the sputtering power supply 54 provides alternating current to the first target 51 and the second target 52, an alternating electric field can be formed between the first target 51 and the second target 52. This alternating electric field can ionize the process gas to form plasma. The plasma then impacts the first target 51 and the second target 52, causing them to sputter target particles (including target atoms, target molecules, and target ions). As shown in the figure. Figure 4 , Figure 5 The arrows in the diagram illustrate the main directions of motion of sputtered particles (including plasma and target particles) as they move from the current target to another. Sputtered particles farther from the center of the alternating electric field (mainly those positioned lower, such as those in region E) are less affected by the alternating electric field and have lower energy. Therefore, these low-energy particles fall onto the substrate 100 within the first processing area. Sputtered particles positioned higher (such as those in region D), although also farther from the center of the alternating electric field and having lower energy, gain energy as they fall downwards, approaching the center of the alternating electric field (and the magnetic field described later). Sputtered particles closer to the center of the alternating electric field (such as those in region C) are more significantly affected by the field and possess higher energy. Since the first target 51 and the second target 52 alternately act as cathode and anode, the direction of the alternating electric field constantly changes. Therefore, these high-energy particles move back and forth horizontally, colliding with the first target 51 and the second target 52, thus consuming energy. Eventually, the energy of these high-energy particles decreases, causing them to fall onto the substrate 100 within the first processing area. Therefore, this structure ensures that most sputtered particles falling onto the substrate 100 within the first processing area have lower energy, thereby reducing physical and thermal damage to the substrate 100.

[0053] Optionally, in this embodiment, magnet assemblies 55 can be respectively provided in the first target 51 and the second target 52 to achieve regional guidance of sputtered particles. Specifically, as shown in the figure... Figure 5 , Figure 6As shown, the first target material 51 has a first cavity 510 inside, the second target material 52 has a second cavity 520 inside, and the two groups of magnet assemblies 55 are arranged in the first cavity 510 and the second cavity 520 respectively and can guide the target material particles and plasma in different regions. For example, the magnet assembly 55 arranged in the first cavity 510 includes at least three magnets, the three magnets are arranged in sequence, each magnet has a first end 5501 and a second end 5502 arranged oppositely, the first end 5501 is arranged closer to the second target material 52 than the second end 5502, and the first end 5501 and the second end 5502 of each magnet have opposite magnetism. The arrangement direction of the at least three magnets is crossed with the direction of the first end 5501 of each magnet pointing to the second end 5502, and exemplarily, as shown in the figure, Figure 6 As shown, the at least three magnets include at least one first magnet 551, at least one second magnet 552 and at least one third magnet 553, the second magnet 552 is arranged between the first magnet 551 and the third magnet 553, the polarity of the first end 5501 of the first magnet 551 is the same as the polarity of the first end 5501 of the third magnet 553, and the polarity of the first end 5501 of the first magnet 551 is opposite to the polarity of the first end 5501 of the second magnet 552. It should be noted that the number of specific magnets in the utility model is not limited, and can be a combination of one first magnet 551, two second magnets 552 and one third magnet 553, or a combination of two first magnets 551, two second magnets 552 and two third magnets 553, as long as the above requirements for the arrangement direction and magnetism are met.

[0054] Next, with reference to Figure 7 、 Figure 8 The use process of the coating equipment is introduced taking the preparation of the tin dioxide electron transport layer in the perovskite battery as an example.

[0055] Firstly, the substrate 100 to be coated is accurately laid on the carrier plate 10 and positioned by using an automatic equipment. Then, the carrier plate 10 carrying the substrate 100 is sent into the loading cavity 1, and the cavity is then pumped to a low pressure environment of about 20 Pa, preparing for the subsequent coating process.

[0056] Then, the substrate 100 is sent into the heating chamber 2 for preheating, and slowly moves forward. The heating process aims to increase the temperature of the substrate 100 to ensure that the subsequent film deposition process can be carried out stably. The conveying speed of the carrier plate 10 can be determined according to the total heating time. After the heating is completed, the carrier plate 10 carrying the substrate 100 enters the first process chamber 3. Here, the process gas is introduced in sequence through precise control, and the surface of the substrate 100 undergoes chemical adsorption and desorption reactions to form a uniform and dense first film 101 (i.e., a seed layer). As the carrier plate 10 slowly moves, the first film 101 reaches a predetermined film thickness A.

[0057] Subsequently, the substrate 100 carrying the first film 101 is sent into the isolation chamber 4. In the isolation chamber 4, the purging device 9 introduces inert gas (such as Ar, N2, etc.) multiple times to thoroughly clean the residual atomic layer deposition process gas. At the same time, the gas analyzer 410 monitors the gas composition in the chamber in real time to ensure that the proportion of inert gas exceeds 99.9%, thereby effectively preventing gas pollution.

[0058] After completing the gas isolation and cleaning, the carrier plate 10 carrying the substrate 100 enters the second process chamber 5. Here, the second film 102 is deposited on the first film 101 by physical vapor deposition. As the deposition process proceeds, the second film 102 gradually thickens until it reaches a predetermined film thickness B. During this process, the film deposition process parameters can be adjusted as needed to obtain the desired film quality and thickness.

[0059] After the film deposition is completed, the carrier plate 10 carrying the completed film is sequentially passed through the buffer chamber 6, the unloading buffer chamber 7, and the unloading chamber 8, and the battery piece is collected by the automated equipment for subsequent processing or testing.

[0060] Optionally, after the second film 102 is deposited to a certain thickness, the film thickness can be verified. The detection means confirms whether the film thickness A+B meets the design requirements. If not, the process parameters are adjusted and the corresponding film deposition steps are repeated (including atomic layer deposition in the first process chamber 3 and physical vapor deposition in the second process chamber 5) until the complete film thickness requirement is met.

[0061] Through the above process, the tin dioxide electron transport layer can be formed by atomic layer deposition and physical vapor deposition in the final product. Exemplarily, as shown in FIG. 1, the tin dioxide electron transport layer is formed by atomic layer deposition and physical vapor deposition in the final product. Figure 8As shown, the perovskite battery includes a first transparent conductive oxide layer (FTO or ITO), a hole transport layer (HTL), a perovskite layer, a tin dioxide electron transport layer (ETL) and a second transparent conductive oxide layer (FTO or ITO) stacked in sequence. The tin dioxide electron transport layer includes a first film 101 with a film thickness A and a second film 102 with a film thickness B, the first film 101 is formed by an atomic layer deposition process, and the second film 102 is formed by a physical vapor deposition process. The above-mentioned film coating equipment can realize an excellent process which takes into account the low damage characteristics of atomic layer deposition to the substrate 100 and the high efficiency characteristics of physical vapor deposition, thereby improving the production capacity on the basis of ensuring no damage to the substrate and ensuring process stability.

[0062] In the description of the present specification, the description referring to the terms "some embodiments", "other embodiments", and the like means that the specific features, structures, materials or characteristics described in connection with the embodiments or examples are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0063] Obviously, the above embodiments of the present application are only examples for clearly illustrating the present application, and are not intended to limit the implementation modes of the present application. For those skilled in the art, various obvious changes, re-adjustments and substitutions can be made without departing from the protection scope of the present application. Here, it is not necessary and impossible to enumerate all the implementation modes. Any modification, equivalent substitution and improvement made within the spirit and principle of the present application shall be included in the protection scope of the claims of the present application.

Claims

1. A coating apparatus for coating a substrate, characterized by, Comprising: a first process cavity, the substrate can be transported into the first process cavity for atomic layer deposition; an isolation cavity, the isolation cavity is arranged downstream of the first process cavity, and a first cavity isolation valve is arranged between the first process cavity and the isolation cavity; a second process cavity, the second process cavity is arranged downstream of the isolation cavity, the substrate can be transported into the second process cavity through the isolation cavity for physical vapor deposition, and a second cavity isolation valve is arranged between the isolation cavity and the second process cavity; wherein the isolation cavity is provided with a gas inlet for introducing inert gas into the isolation cavity.

2. The coating equipment according to claim 1, wherein: a heating plate and / or a gas distribution plate are arranged in the isolation cavity, the heating plate is used for heating the substrate, and the gas distribution plate is connected to the gas inlet.

3. The coating equipment according to claim 1, wherein: the coating equipment comprises a purge device, an outlet pipe of the purge device is connected to the gas inlet, and the inert gas is provided to the isolation cavity through the outlet pipe; at least two gas inlets are arranged on the isolation cavity along the movement direction of the substrate, and the gas inlets are connected to the outlet pipe of the purge device.

4. The coating apparatus of claim 1, wherein, The second process cavity has a coating process chamber, and the coating equipment further comprises: an inlet assembly connected to the coating process chamber and configured to deliver process gas to the coating process chamber; a first target arranged in the coating process chamber; a second target arranged in the coating process chamber and spaced apart from the first target in the horizontal direction; a sputtering power supply having a first output end and a second output end, the first output end is electrically connected to the first target, and the second output end is electrically connected to the second target, the sputtering power supply is configured to provide alternating current to the first target and the second target to make the first target and the second target alternately serve as cathode and anode; wherein the first target and the second target form a processing area for coating the substrate below.

5. The coating apparatus of claim 4, wherein, When the sputtering power supply provides the alternating current to the first target and the second target, an alternating electric field is formed between the first target and the second target, which can ionize the process gas into plasma, the plasma collides with the first target and the second target, and the first target and the second target can sputter target particles, the first target has a first cavity inside, the second target has a second cavity inside, and two groups of magnet assemblies are arranged in the first cavity and the second cavity respectively and configured to guide the target particles and the plasma; the magnet assembly comprises: At least three magnets, at least three of the magnets are arranged in sequence, the magnets have oppositely arranged first ends and second ends, the arrangement direction of the at least three magnets is crossed with the direction from the first end to the second end of each of the magnets, and the polarities of the first end and the second end of each of the magnets are opposite; At least three of the magnets include at least one first magnet, at least one second magnet, and at least one third magnet, the second magnet is arranged between the first magnet and the third magnet, the polarity of the first end of the first magnet is the same as the polarity of the first end of the third magnet, and the polarity of the first end of the first magnet is opposite to the polarity of the first end of the second magnet.

6. The coating apparatus of claim 1, wherein, Further comprising: A gas analyzer connected to the isolation cavity, the gas analyzer being used to analyze the gas components in the isolation cavity; The isolation cavity is provided with a mounting port, and the gas analyzer is provided with a detection part which can be inserted into the isolation cavity through the mounting port.

7. The coating apparatus of claim 1, wherein, Further comprising: A transmission roller arranged in the isolation cavity along the movement direction of the substrate, the transmission roller being used to support a carrier plate, and the transmission roller being capable of rotating to transmit the carrier plate to the second process cavity, wherein the carrier plate is used to support the substrate; A transmission system including a transmission belt and a plurality of transmission shafts, the transmission shafts being arranged through the isolation cavity and being correspondingly connected to the transmission roller in transmission, and the transmission belt being connected to the transmission shafts in transmission; A driving system capable of driving the transmission roller to rotate through the transmission system.

8. The coating apparatus of claim 1, wherein, Further comprising: A loading cavity arranged upstream of the first process cavity and used to place a carrier plate supporting the substrate; A heating cavity arranged downstream of the loading cavity and upstream of the first process cavity, wherein the substrate can be sequentially transported through the loading cavity, the heating cavity, and the first process cavity.

9. The coating apparatus of claim 8, wherein, Comprising: A plurality of the heating cavities, the plurality of the heating cavities being sequentially connected, wherein the substrate can be sequentially transported through the plurality of the heating cavities; A plurality of the first process cavities, the plurality of the first process cavities being sequentially connected and being provided with third cavity isolation valves therebetween; A plurality of the second process cavities, the plurality of the second process cavities being sequentially connected.

10. The coating apparatus of claim 1, wherein, Further comprising: A buffer cavity arranged downstream of the second process cavity and used to realize process buffering of physical vapor deposition; An unloading buffer cavity arranged downstream of the buffer cavity and used to reduce the temperature of the substrate; An unloading cavity arranged downstream of the unloading buffer cavity and used to take out the substrate from the film coating equipment.

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