Material melting auxiliary device and single crystal furnace system

Abstract

The utility model provides a material auxiliary device and single crystal furnace system, including connecting chuck, connecting rod connected with connecting chuck and connecting rod connected thermal insulation subassembly, the thermal insulation subassembly includes connected cover body and tray, cover body and tray are connected, cover body and tray both can move relative to connecting rod, tray and connecting rod clamp connection, and the connecting rod is connected with connecting chuck. The connecting chuck is clamped with the connecting rod, and a containing space is formed between the cover body and the tray. The material melting auxiliary device has the beneficial effects that material melting is assisted, and hot air in the single crystal furnace is gathered in the quartz crucible, so that the abnormal phenomena such as temperature rise in the single crystal furnace, silicon raw material melting acceleration, edge hanging and bridging are obviously reduced, the material melting time is shortened, and meanwhile, the material melting auxiliary device moves up and down in the single crystal furnace, so that the material melting efficiency is improved. The flowing direction of the protective gas is changed, so that dust impurities are discharged along with the protective gas or blown into the quartz crucible, and impurities in the silicon melt are removed by combining a slag bonding process, so that the crystal growth success rate and the single crystal quality are improved.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the technical field of semiconductor preparation, especially relates to a material melting auxiliary device and single crystal furnace system. BACKGROUND

[0002] The material melting is heat radiation through heat source and transmits heat to the graphite crucible outer wall, and then the graphite crucible and quartz crucible and silicon raw material transmit heat through heat conduction until the silicon temperature rises to 1685K (the silicon melting point) and the silicon changes from solid state to liquid state. The mainstream method of the current material melting is high-temperature melting in a closed furnace chamber, and this method is prone to produce abnormal phenomena such as edge hanging and bridging during the melting process. SUMMARY

[0003] In view of the above problems, the utility model provides a material melting auxiliary device and single crystal furnace system to solve the above or other former problems existing in the prior art.

[0004] To solve the above technical problems, the utility model adopts the technical scheme of a material melting auxiliary device, which comprises a connecting chuck, a connecting rod connected with the connecting chuck and a heat preservation assembly connected with the connecting rod, the heat preservation assembly comprises a cover body and a tray connected with each other, the cover body and the tray are movable relative to the connecting rod, the tray is clamped with the connecting rod, the connecting chuck is clamped with the connecting rod, and the cover body and the tray have an accommodating space therebetween.

[0005] Further, the connecting rod comprises a rod body and first and second abutting members arranged at both ends of the rod body, the first and second abutting members and the rod body are coaxially arranged, and the outer diameter of the second abutting member is larger than that of the rod body.

[0006] Further, the cover body is provided with a first connecting through hole, and the cover body is arranged on the connecting rod through the first connecting through hole.

[0007] Further, the first connecting through hole is coaxially arranged with the cover body, and the outer diameter of one end of the cover body in the axial direction is larger than that of the other end.

[0008] Further, the tray is provided with a second connecting through hole and a first abutting hole, the second connecting through hole is communicated with the first abutting hole, the diameter of the first abutting hole is larger than that of the second connecting through hole, the outer diameter of the first abutting member is larger than that of the second connecting through hole, the tray is arranged on the connecting rod through the second connecting through hole and the first abutting hole, the first abutting member is located in the first abutting hole, and the first abutting member is in abutting cooperation with the first abutting hole.

[0009] Further, the connecting clamp includes a clamp body, a mounting channel provided on the clamp body, a second abutting hole provided on the clamp body, and a mounting hole. The mounting channel is in communication with the second abutting hole. The mounting channel is provided on the peripheral sidewall of the clamp body. The second abutting hole is in communication with the outside of the axial end of the clamp body. The second abutting hole is coaxially arranged with the clamp body, so that the second abutting member passes through the mounting channel and enters the second abutting hole, and the second abutting member is in abutting cooperation with the second abutting hole.

[0010] Further, the length of the mounting channel along the axial direction of the clamp body is not less than the length of the second abutting hole along the axial direction of the clamp body. The width of the mounting channel along the circumferential direction of the clamp body is not less than the maximum outer diameter of the second abutting member. The width of the intersection of the mounting channel and the second abutting hole along the circumferential direction of the clamp body is not greater than the diameter of the second abutting hole.

[0011] Further, the mounting hole is coaxially arranged with the second abutting hole and is in communication with the second abutting hole. The mounting hole is in communication with the outside of the other axial end of the clamp body, so as to be connected with the seed crystal clamp.

[0012] Further, the accommodation space is provided with a heat preservation member, and the heat preservation member is connected with the connecting rod.

[0013] Further, the materials of the connecting rod, the connecting clamp, the heat preservation assembly, and the heat preservation member are graphite.

[0014] A single crystal furnace system includes a single crystal furnace body and a material melting auxiliary device as described above provided in the single crystal furnace body. The material melting auxiliary device is connected with a seed crystal clamp in the single crystal furnace body and is suspended in the single crystal furnace body.

[0015] Further, the distance between the peripheral sidewall of the heat preservation assembly of the material melting auxiliary device and the inner sidewall of the flow guide cylinder in the single crystal furnace body is 20-60 mm.

[0016] Further, the distance between the bottom side of the heat preservation assembly of the material melting auxiliary device and the surface of the melt in the quartz crucible in the single crystal furnace body is 10-30 mm.

[0017] With the above technical scheme, the cover body of the material melting auxiliary device is buckled and connected with the tray, the cover body is arranged on the connecting rod, the connecting rod is clamped with the tray, and the connecting rod is clamped with the connecting clamp head, so that the material melting auxiliary device is fixed and connected without bolts and other connecting members, the structure is simple, and the installation and dismounting are convenient; the material melting auxiliary device is installed in the single crystal furnace during the material melting stage and is located above the quartz crucible, auxiliary material melting is performed, hot air flow in the single crystal furnace is gathered in the quartz crucible, the temperature in the single crystal furnace is increased, and abnormal phenomena such as silicon raw material melting, edge hanging and bridge forming are obviously reduced, and the material melting time is shortened; meanwhile, the material melting auxiliary device moves up and down in the single crystal furnace, the flow direction of the protective gas is changed, dust and impurities are discharged with the protective gas or blown into the quartz crucible, and the impurities in the silicon melt are removed in combination with the slag sticking process, the phenomenon of impurity bulging in the single crystal drawing process is avoided, the amount of dissolved substances on the inner wall of the quartz crucible is effectively reduced, the service life of the quartz crucible is prolonged, the probability of silicon leakage and deformation in the crystal growth process is reduced, the impurities introduced due to the dissolution of the inner wall of the quartz crucible in the melt are reduced, and the success rate of crystal growth and the quality of single crystals are improved. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a perspective structural schematic view of a material melting auxiliary device of an embodiment of the utility model;

[0019] Figure 2 is a front view structural schematic view of the material melting auxiliary device of an embodiment of the utility model;

[0020] Figure 3 is Figure 2 an A-A sectional view structural schematic view of the material melting auxiliary device;

[0021] Figure 4 is a perspective structural schematic view of a cover body of an embodiment of the utility model;

[0022] Figure 5 is a sectional view structural schematic view of the cover body of an embodiment of the utility model;

[0023] Figure 6 is a perspective structural schematic view of a tray of an embodiment of the utility model;

[0024] Figure 7 is a sectional view structural schematic view of the tray of an embodiment of the utility model;

[0025] Figure 8 is a structural schematic view of a connecting rod of an embodiment of the utility model;

[0026] Figure 9 is a structural schematic view of a connecting clamp head of an embodiment of the utility model;

[0027] Figure 10is a top view structural schematic diagram of the connecting collet of an embodiment of the utility model;

[0028] Figure 11 is Figure 10 a B-B cross section structural schematic diagram of the utility model;

[0029] Figure 12 is a bottom view structural schematic diagram of the connecting collet of an embodiment of the utility model;

[0030] Figure 13 is Figure 10 a C-C cross section structural schematic diagram of the utility model.

[0031] In the drawing,

[0032] 1, connecting collet 2, connecting rod 3, cover body

[0033] 4, tray 5, heat preservation piece 10, collet body

[0034] 11, installation channel 12, installation hole 20, rod body

[0035] 21, first abutting piece 22, second abutting piece 30, first connecting through hole

[0036] 40, boss 41, second connecting through hole 42, first abutting hole

[0037] 13, second abutting hole DETAILED DESCRIPTION

[0038] The utility model will be further explained in connection with the drawings and specific embodiments.

[0039] Figure 1 The structure schematic diagram of an embodiment of the utility model is shown, and the embodiment relates to a material melting auxiliary device and a single crystal furnace system, in the material melting process, the material melting auxiliary device is hung in the single crystal furnace, is located above the quartz crucible, gathers the hot air flow in the quartz crucible, stores the hot air flow, improves the temperature in the single crystal furnace, speeds up the silicon raw material melting, reduces the material melting time, changes the flow direction of the protective gas by the up and down movement of the material melting auxiliary device, and combines the slag sticking process, improves the single crystal success rate and single crystal quality.

[0040] A material melting auxiliary device, as shown in Figures 1-3 It includes a connecting collet 1, a connecting rod 2 connected with the connecting collet 1 and a heat preservation assembly connected with the connecting rod 2, the connecting rod 2 is arranged, plays the role of connecting framework, connects the connecting collet 1 and the heat preservation assembly together, and constructs the overall structure of the material melting auxiliary device, the connecting collet 1 is used for being connected with the seed crystal collet in the single crystal furnace, so as to realize that the material melting auxiliary device is hung in the single crystal furnace, and the heat preservation assembly plays the role of auxiliary material melting.

[0041] The material melting auxiliary device is connected with the seed crystal chuck in use, is hung in the single crystal furnace, is located above the quartz crucible, the heat preservation assembly has a certain volume, can gather the hot gas flow in the single crystal furnace in the quartz crucible, due to the storage of the hot gas flow, the temperature in the single crystal furnace will gradually increase, the high temperature helps the silicon raw material to melt quickly, shortens the material melting time, thereby reducing the material melting power and reducing the production cost.

[0042] In some implementable embodiments, preferably, the connecting chuck 1 and the connecting rod 2 are coaxially arranged with the heat preservation assembly, so that the material melting auxiliary device is always in a force balance state during the up-down movement in the single crystal furnace, and remains stable during the movement.

[0043] The heat preservation assembly includes a cover 3 and a tray 4 connected with each other, the cover 3 is connected with the tray 4, and both the cover 3 and the tray 4 can move relative to the connecting rod 2, the tray 3 is clamped with the connecting rod 2, the connecting chuck 1 is clamped with the connecting rod 2, and the cover 3 and the tray 4 have a containing space therebetween, which can preserve heat and shield the upper side of the quartz crucible, thereby gathering the hot gas flow in the single crystal furnace. In some implementable embodiments, the cover 3 and the tray 4 are connected by buckling, such as directly buckling the cover 3 on the tray 4, or the cover 3 and the tray 4 are connected by screw threads, or other detachable connection modes, which are selected according to actual needs, and no specific requirements are made here.

[0044] In some implementable embodiments, preferably, the cover 3 and the tray 4 are coaxially arranged, and the cover 3 is coaxially arranged with the connecting rod 2.

[0045] Specifically, as shown in Figures 4-5 The cover 3 is a shell structure with one end open, and has a space inside, the cover 3 is provided with a first connecting through hole 30, and the cover 3 is arranged on the connecting rod 2 through the first connecting through hole 30, when the cover 3 is installed on the connecting rod 2, one end of the connecting rod 2 passes through the first connecting through hole 30, so that the cover 3 is arranged on the connecting rod 2, and the cover 3 can move along the axial direction of the connecting rod 2. The outer diameter of one axial end of the cover 3 is larger than that of the other axial end, that is, the cover 3 is a conical structure, the peripheral side surface of the cover 3 is a curved surface structure, and the cross-sectional shape thereof is a straight line or an arc, which is selected according to actual needs, and no specific requirements are made here. In some implementable embodiments, preferably, the cross-sectional shape of the peripheral side surface of the cover 3 is a straight line, that is, the cover 3 is a truncated cone structure, the large-diameter end of the cover 3 is an open structure, so as to connect the large-diameter end of the cover 3 with the tray 4, and the small-diameter end of the cover 3 is a plane structure, and the first connecting through hole 30 is arranged on the end face of the small-diameter end, the first connecting through hole 30 is a through hole penetrating through the small-diameter end of the cover 3, so that the two sides of the small-diameter end of the cover 3 are communicated, so as to connect the connecting rod 2 with the cover 3.

[0046] The cover body 3 with different diameters at the two axial ends is adopted to affect the flow direction of the protective gas, change the flow direction of the protective gas, make the dust impurities in the single crystal furnace be discharged with the protective gas or be blown into the quartz crucible, and adopt the slag dipping process to stick slag and remove the impurities in the melt in the quartz crucible, avoid the impurity bulge phenomenon in the single crystal pulling process, and further improve the success rate of crystal growth and the quality of single crystal.

[0047] In order to stably suspend the material melting auxiliary device in the single crystal furnace, the first connecting through hole 30 is coaxially arranged with the cover body 3, that is, the cover body 3 is an axisymmetric structure, so that the material melting auxiliary device is balanced in force.

[0048] The cover body 3 has a certain height along the axial direction, so that the cover body 3 has a certain internal space, so that after the cover body 3 is connected with the tray 4, a containing space is formed.

[0049] The shape of the first connecting through hole 30 can be circular, square, polygonal or other shapes, which is selected according to actual needs, and no specific requirements are made here. In some implementable embodiments, preferably, the shape of the first connecting through hole 30 is adapted to the shape of the connecting rod 2, and the diameter of the first connecting through hole 30 is not less than the outer diameter size of the connecting rod 2, so that the connecting rod 2 passes through the first connecting through hole 30, and the cover body 3 is arranged on the connecting rod 2.

[0050] As shown in Figure 8 The connecting rod 2 includes a rod body 20 and first and second abutting members 21 and 22 arranged at both ends of the rod body 20, the first and second abutting members 21 and 22 are coaxially arranged with the rod body 20, the outer diameter of the first abutting member 21 is greater than the outer diameter of the rod body 20, the rod body 20 is a rod structure with a certain length, and the cross-sectional shape of the rod body 20 can be circular, square or other shapes, which is selected according to actual needs, and no specific requirements are made here. The first and second abutting members 21 and 22 are fixedly connected with the rod body 20, and the fixed connection mode is preferably one-piece forming, so that the connecting rod 2 has stable structure and long service life.

[0051] The first abutting member 21 is arranged to connect the connecting rod 2 with the tray 4, and the first abutting member 21 is in abutting cooperation with the tray 4. The second abutting member 22 is arranged to connect the connecting rod 2 with the connecting chuck 1, and the second abutting member 22 is in abutting cooperation with the connecting chuck 1.

[0052] In order to facilitate the preparation of the first and second abutting members 21 and 22, the first abutting member 21 is fixedly connected with the rod body 20 through a transition part, and the second abutting member 22 is fixedly connected with the rod body 20 through a transition part, and the transition part is a tapered structure.

[0053] In order to facilitate the second abutting member 22 to pass through the first connecting through hole 30 and move along the rod body 20, the diameter of the first connecting through hole 30 is not less than the maximum outer diameter of the second abutting member 22, and the diameter of the first connecting through hole 30 is not less than the maximum outer diameter of the rod body 20.

[0054] As shown in Figures 6-7 The tray 4 is an open-ended box structure, has an internal space, and the cross-sectional shape can be circular, square, or other shapes, which is selected according to actual needs, and no specific requirements are made here. The shape of the open end of the tray 4 is adapted to the shape of the large-diameter end (open end) of the cover 3, and a stop structure is arranged on the axial end face of the open end of the tray 4, and a corresponding stop structure is arranged on the end face of the large-diameter end of the cover 3, so that the large-diameter end of the cover 3 is buckled at the open end of the tray 4, realizing the buckling connection of the cover 3 and the tray 4. With the internal space of the tray 4 and the internal space of the cover 3, the accommodation space between the cover 3 and the tray 4 is constructed.

[0055] In order to realize the connection of the connecting rod 2 and the tray 4, the tray 4 is provided with a second connecting through hole 41 and a first abutting hole 42, the second connecting through hole 41 communicates with the first abutting hole 42, the diameter of the first abutting hole 42 is greater than that of the second connecting through hole 41, the outer diameter of the first abutting member 21 is greater than that of the second connecting through hole 41, the tray 4 is arranged on the connecting rod 2 through the second connecting through hole 41 and the first abutting hole 42, and the first abutting member 21 is located in the first abutting hole 42 and abuts with the first abutting hole 42. In order to realize that the second abutting member 22 passes through the second connecting through hole 41, the diameter of the second connecting through hole 41 is not less than the maximum outer diameter of the second abutting member 22.

[0056] In some implementable embodiments, preferably, the second connecting through hole 41, the first abutting hole 42 and the tray 4 are coaxially arranged, so that the tray 4 is balanced in the moving process.

[0057] A boss 40 is provided on the inner side of the bottom wall of the tray 4. The boss 40 protrudes from the inner side of the bottom wall of the tray 4. The second connecting through hole 41 and the first abutting hole 42 are provided on the boss 40. The second connecting through hole 41 is formed by the free end face of the boss 40 being recessed inward. The diameter of the second connecting through hole 41 is larger than the outer diameter of the rod body 20. At the same time, the diameter of the second connecting through hole 41 is larger than the maximum outer diameter of the second abutting member 22. The diameter of the second connecting through hole 41 is larger than the maximum outer diameter of the transition part between the second abutting member 22 and the rod body 20, so that the rod body 20, the second abutting member 22 and the transition part can pass through the second connecting through hole 41, so that the tray 4 passes through the connecting rod 2 and moves along the connecting rod 2. The first abutment hole 42 is formed by an inward recess from the other side of the boss 40. That is, the first abutment hole 42 is a hole structure formed by an inward recess from the outer side of the bottom wall of the tray 4. The first abutment hole 42 is connected to the second connecting through hole 41. The diameter of the first abutment hole 42 is larger than the diameter of the second connecting through hole 41. The first abutment hole 42 and the second connecting through hole 41 form a stepped hole structure. The shape of the first abutment hole 42 is adapted to the shape of the first abutment member 21. The size of the first abutment hole 42 is not smaller than the size of the first abutment member 21 so that the first abutment member 21 can be located in the first abutment hole 42. The first abutment member 21 is abutted in the first abutment hole 42 and will not enter the second connecting through hole 41, thereby installing the tray 4 on the connecting rod 2.

[0058] In some feasible embodiments, preferably, the second connecting through hole 41 is a tapered hole to accommodate the transition between the first abutment 21 and the rod body 20.

[0059] The aforementioned second connecting through hole 41, first abutment hole 42, and boss 40 are coaxially arranged with tray 4.

[0060] like Figures 9-13 As shown, the aforementioned connecting chuck 1 includes a chuck body 10, an installation channel 11 disposed on the chuck body 10, a second abutment hole 13 disposed on the chuck body 10, and an installation hole 12. The installation channel 11 is disposed on the peripheral side wall of the chuck body 10 and communicates with the second abutment hole 13. The second abutment hole 13 communicates with the outside of one axial end of the chuck body 10, so that the connecting rod 2 passes through the installation channel 11 and enters the second abutment hole 13, and the second abutment member 22 abuts and engages with the second abutment hole 13. The chuck body 10 has a cylindrical structure to facilitate the arrangement of the installation channel 11, the second abutment hole 13, and the installation hole 12. The cross-sectional shape of the chuck body 10 can be circular, square, or other shapes, selected according to actual needs. No specific requirements are made here. Preferably, in some feasible embodiments, the cross-sectional shape of the chuck body 10 is circular, and the chuck body 10 has a cylindrical structure.

[0061] The installation channel 11 is arranged on the circumferential side wall of the clamp head body 10, and is arranged along the axial direction of the clamp head body 10 and has a certain length. The installation channel 11 is recessed inward from the circumferential side of the clamp head body 10 until it communicates with the second abutting hole 13, thereby forming the installation channel 11 structure. The length of the installation channel 11 along the axial direction of the clamp head body 10 is not less than the length of the second abutting hole 13 along the axial direction of the clamp head body 10. The width of the installation channel 11 along the circumferential direction of the clamp head body 10 is not less than the maximum outer diameter of the second abutting member 22, so that the second abutting member 22 can pass through the installation channel 11 and enter the second abutting hole 13, and abut in the second abutting hole 13, thereby achieving the connection of the connecting rod 2 and the connecting clamp head 1.

[0062] The projection of the installation channel 11 on the plane (perpendicular to the axial end surface) of the axis of the clamp head body 10 can be square, that is, the side wall of the installation channel 11 is perpendicular to the plane of the axis of the clamp head body 10, or the projection of the installation channel 11 on the plane (perpendicular to the axial end surface) of the axis of the clamp head body 10 can be trapezoidal, that is, the side wall of the installation channel 11 is arranged to be obliquely intersected with the plane of the axis of the clamp head body 10. The side wall of the installation channel 11 is an inclined surface, and the opening width (along the circumferential direction of the clamp head body 10) of the installation channel 11 at the outer side surface of the clamp head body 10 is greater than the opening width of the installation channel 11 at the intersection with the second abutting hole 13. The specific structure of the installation channel 11 is selected according to actual needs, and no specific requirements are made here. However, regardless of the structure of the installation channel 11, the width of the installation channel 11 at the intersection with the second abutting hole 13 is less than the diameter of the second abutting hole 13, so that the second abutting member 22 can be clamped in the second abutting hole 13, thereby achieving effective connection of the connecting rod 2 and the connecting clamp head 1.

[0063] The second abutting hole 13 is a hole structure, and the second abutting hole 13 is coaxially arranged with the chuck body 10. The shape of the second abutting hole 13 is adapted to the shape of the second abutting part 22, and the second abutting hole 13 is formed by inwardly recessing an axial end surface of the chuck body 10. Since the second abutting part 22 includes the abutting part and the connecting part connected with each other, the abutting part is coaxially arranged with the connecting part, the abutting part is arranged at one end of the connecting part, the other end of the connecting part is connected with the transition part, and the other end of the transition part is connected with the rod body 20, the second abutting hole 13 includes a first accommodating hole for accommodating the abutting part and a second accommodating hole for accommodating the connecting part. The first accommodating hole and the second accommodating hole are in communication, and the first accommodating hole and the second accommodating hole are coaxially arranged. The shape and size of the first accommodating hole are adapted to the shape of the abutting part, and the shape and size of the second accommodating hole are adapted to the shape and size of the connecting part. The connecting part is located in the second accommodating hole, and the connecting part extends out of the second accommodating hole, so that the connecting part is connected with the transition part, and the transition part does not contact the chuck body 10 and does not interfere.

[0064] The mounting hole 12 is coaxially arranged with the second abutting hole 13, and the mounting hole 12 is in communication with the second abutting hole 13. The mounting hole 12 is in communication with the outside of the other axial end of the chuck body 10, so that the mounting hole 12 is connected with the seed chuck. The mounting hole 12 is a hole structure formed by inwardly recessing an end surface of the other axial end of the chuck body 10. In order to facilitate the connection between the mounting hole 12 and the seed chuck, the mounting hole 12 is preferably a threaded hole, so that the connecting chuck 1 is threadedly connected with the seed chuck.

[0065] In order to keep the connecting chuck 1 balanced during movement, the chuck body 10, the mounting hole 12, and the second abutting hole 13 are coaxially arranged.

[0066] Further optimization, in order to enhance the heat preservation function of the material mixing auxiliary device, the heat preservation part 5 is arranged in the accommodating space between the cover body 3 and the tray 4. The shape of the heat preservation part 5 is adapted to the shape of the accommodating space, and the heat preservation part 5 is provided with a through hole so that the connecting rod 2 passes through the through hole. The heat preservation part 5 is connected with the connecting rod 2, avoiding interference of the heat preservation part 5 with the connection of the connecting rod 2 with the tray 4 and the cover body 3.

[0067] The materials of the connecting rod 2, the connecting chuck 1, the heat preservation assembly, and the heat preservation part 5 are all graphite, avoiding the introduction of new impurities during single crystal pulling.

[0068] The material melting auxiliary device is assembled first in use, the heat preservation piece 5 is placed on the tray 4, and then the cover body 3 is buckled on the tray 4, so that the heat preservation piece 5 is located in the containing space between the tray 4 and the cover body 3, the first abutting hole 42, the second connecting through hole 41, the through hole on the heat preservation piece 5 and the first connecting through hole 30 on the cover body 3 are coaxially arranged, and the first abutting hole 42, the second connecting through hole 41, the through hole on the heat preservation piece 5 and the first connecting through hole 30 on the cover body 3 are communicated, one end of the connecting rod 2 provided with the second abutting piece 22 sequentially penetrates the first abutting hole 42, the second connecting through hole 41, the through hole and the first connecting through hole 30, and extends out of the cover body 3, until the first abutting piece 21 is located in the first abutting hole 42, and the first abutting piece 21 abuts against the first abutting hole 42, the second abutting piece 22 penetrates the mounting channel 11 of the connecting clamp 1, until it is located in the second abutting hole 13, and the second abutting piece 22 abuts against the second abutting hole 13, forming the structure of the material melting auxiliary device, the gravity of the cover body 3, the tray 4 and the heat preservation piece 5 makes the assembly structure composed of the cover body 3, the tray 4 and the heat preservation piece 5 hung below the connecting clamp 1 through the connecting rod 2, without the need of bolts and other connecting pieces for fixed assembly, the structure is simple, and installation and disassembly are convenient.

[0069] A single crystal furnace system comprises a single crystal furnace body and a material melting auxiliary device as described above arranged in the single crystal furnace body, the material melting auxiliary device is connected with a seed crystal clamp in the single crystal furnace body and hung in the single crystal furnace body, when the material melting auxiliary device is connected with the seed crystal clamp, the seed crystal clamp is connected with the mounting hole 12 through threads, the seed crystal clamp is connected with a steel cable, the material melting auxiliary device is hung in the single crystal furnace, and the steel cable is connected with a crystal lifting mechanism, under the driving action of the crystal lifting mechanism, the material melting auxiliary device can be lifted and lowered in the single crystal furnace.

[0070] The distance between the outer side wall of the heat preservation assembly of the material melting auxiliary device and the inner side wall of the flow guide cylinder in the single crystal furnace body is 20-60 mm, that is, the outer diameter of the material melting auxiliary device is smaller than the inner diameter of the flow guide cylinder in the single crystal furnace, so that the material melting auxiliary device does not touch the flow guide cylinder during the up and down movement in the single crystal furnace, and the material melting auxiliary device does not interfere with the movement of the flow guide cylinder.

[0071] The distance between the bottom side of the heat preservation assembly of the material melting auxiliary device and the surface of the melt in the quartz crucible in the single crystal furnace body is 10-30 mm, that is, the distance between the side of the material melting auxiliary device facing the silicon melt in the quartz crucible and the surface of the silicon melt is 10-30 mm, and the distance is also the lowest position of the material melting auxiliary device during the movement in the single crystal furnace, so as to avoid the contact between the material melting auxiliary device and the silicon melt in the quartz crucible during the up and down movement, block the hot gas flow, and facilitate the gathering of the hot gas flow in the single crystal furnace in the quartz crucible.

[0072] A material melting process, using the single crystal pulling system as described above, comprising:

[0073] Before the material melting, the material melting auxiliary device is installed in the single crystal furnace, and then the single crystal pulling is carried out, and the material melting process is carried out;

[0074] In the initial stage of material melting, the protective gas is introduced at a first flow rate, where the protective gas is argon, and the first flow rate of the protective gas is 120-160 slpm, and the flow rate of the protective gas is selected according to actual needs, and here is not specifically required. At the same time, in the initial stage of material melting, the distance from the side of the material melting auxiliary device facing the quartz crucible to the surface of the melt in the quartz crucible is kept at a first distance, and the material melting is carried out, that is, in the initial stage of material melting, the material melting auxiliary device remains stationary, and the material melting auxiliary device is located above the quartz crucible, and the upward movement of the hot gas flow is blocked, and the hot gas flow in the single crystal furnace is gathered in the quartz crucible. Since the hot gas flow is trapped between the material melting auxiliary device and the quartz crucible, the temperature in the single crystal furnace gradually rises, which is conducive to accelerating the melting of the silicon raw material and shortening the material melting time.

[0075] The first distance described above is 10-30 mm, and the size of the first distance is selected according to actual needs, and here is not specifically required.

[0076] After the initial stage of material melting is completed, the first stage of material melting is entered, and in the first stage of material melting, the protective gas is introduced at a first flow rate, and the material melting auxiliary device is controlled to move up and down to blow off the dust in the single crystal furnace. Here, the first flow rate of the protective gas is 120-160 slpm, and the flow rate of the protective gas is selected according to actual needs, and here is not specifically required. Since the cover body 3 of the material melting auxiliary device is a conical structure, the flow direction of the protective gas entering from the top end of the single crystal furnace auxiliary chamber is changed, the flow direction of the protective gas in the single crystal furnace is affected, the excess dust and impurities in the single crystal furnace are blown off, the impurities flow with the protective gas, and the impurities are blown off along the gas outlet of the protective gas, or the dust and impurities are blown into the quartz crucible, combined with the subsequent slag sticking process, the impurities are cleaned out, and the phenomenon of impurity bulging during single crystal pulling is avoided, and the crystal growth rate is improved.

[0077] The auxiliary device moves up and down along the axial direction of the sub-chamber through the lifting mechanism and the steel cable, and moves up and down in the main chamber and the sub-chamber of the single crystal furnace. When the auxiliary device moves up and down, the initial position is set at a distance of 10-30 mm from the surface of the melt in the quartz crucible along the direction from the quartz crucible to the sub-chamber, and the first position is set at a distance of 100-2000 mm from the lower end of the sub-chamber to the middle of the sub-chamber. The auxiliary device moves at a first speed between the initial position and the lower end of the sub-chamber, and moves at a second speed between the lower end of the sub-chamber and the first position. The second speed is greater than the first speed, that is, the auxiliary device moves slowly in the main chamber of the single crystal furnace, and changes the flow direction of the protective gas while being heated. In the sub-chamber of the single crystal furnace, the auxiliary device moves at a larger speed, and changes the flow direction of the protective gas to blow off the dust and impurities in the sub-chamber.

[0078] The first speed is 200-350 mm / h, and the size of the first speed is selected according to actual needs, which is not specifically required here.

[0079] The second speed is 350-550 mm / h, and the size of the second speed is selected according to actual needs, which is not specifically required here.

[0080] After the first stage of material melting is completed, the second stage of material melting is entered. In the second stage of material melting, slag sticking is performed to remove impurities in the silicon melt to improve the crystal growth rate. In the second stage of material melting, the silicon raw material is completely melted. As the material block melts, part of the flaky and blocky impurities are carried by the melt flowing with the rotation of the quartz crucible, thereby floating on the surface of the melt at the center. The slag sticking needs to be performed to remove the impurities and remove the impurities in the silicon melt to improve the crystal growth rate. In the second stage of material melting, the auxiliary device is removed, and the seed crystal is installed. When the slag sticking is performed, it includes:

[0081] The seed crystal is lowered. After the seed crystal contacts the impurities of the melt, the seed crystal is further lowered by a second distance, and is stopped for a first time, so that the seed crystal is fused with the impurity block. The second distance is the distance that the contact point of the seed crystal and the impurities of the silicon melt moves downward, and the second distance is 2-10 mm. The first time is 2-10 min. The second distance and the first time are selected according to actual needs, which are not specifically required here.

[0082] After the seed crystal is fused with the impurity block, the seed crystal is raised at a third speed. When the seed crystal rises to a second position, it is stopped for a second time. The third speed is 100-150 mm / h, which is selected according to actual needs, which is not specifically required here. The second position is 5-10 mm above the melt level in the quartz crucible. The second time is 2-10 min, which is selected according to actual needs, which is not specifically required here.

[0083] Whether the impurity block is detached from the seed crystal is observed through the window of the single crystal furnace, if not, the seed crystal is raised at the fourth speed, the seed crystal is cooled after entering the sub-chamber, and the impurity block is taken out after cooling, the fourth speed is 400-600 mm / h, the cooling time is 30-60 min, preferably, the fourth speed is 500 mm / h, the fourth speed and the cooling time are selected according to actual needs, which are not specifically required here;

[0084] If the impurity block is detached, the above steps are repeated to stick the slag again.

[0085] From the beginning of entering the melting process to after the last re-injection, until the silicon raw material in contact with the inner wall of the quartz crucible is melted and the remaining 70%-80% of the silicon raw material on the surface of the silicon melt, this stage is set as the initial melting stage, that is, multiple re-injections are required in the melting stage to achieve the required weight of the silicon melt, and the initial melting stage is the process from the beginning of entering the melting process to the first time node, that is, after the last re-injection until the silicon raw material in contact with the inner wall of the quartz crucible is melted, and the silicon raw material in the silicon melt is not in contact with the inner wall of the quartz crucible, and at the same time, the remaining 70%-80% of the silicon raw material on the surface of the silicon melt. When the first time node is reached, the initial melting stage ends, and the first melting stage begins. The first time node divides the initial melting stage and the first melting stage;

[0086] From the last re-injection until the silicon raw material in contact with the inner wall of the quartz crucible is melted and the remaining 70%-80% of the silicon raw material on the surface of the silicon melt to the remaining 10%-20% of the silicon raw material on the surface of the silicon melt, this stage is set as the first melting stage, that is, after the initial melting stage ends, the first melting stage begins, and ends until the remaining 10%-20% of the silicon raw material on the surface of the silicon melt, and the second melting stage begins.

[0087] From the remaining 10%-20% of the silicon raw material on the surface of the silicon melt to the end of the melting process, this stage is set as the second melting stage, that is, after the first melting stage ends, the second melting stage begins, and the slag sticking is performed in the second melting stage until the end of the melting process, the slag sticking is completed, and the next process (seed crystal introduction process) begins.

[0088] Compared with the existing melting process without using the melting auxiliary device, the same furnace table, the same heat field size, and the same size of single crystal are used, the single crystal growth process and the growth equipment and environment are not changed, and the average difference in the thickness of the inner wall of the quartz crucible before and after use, the melting power, the average melting time, the average oxygen content of the crystal, and the average carbon content of the crystal are all reduced, the success rate of crystal growth is improved, and the specific parameters are shown in the following table:

[0089]

[0090] From the above table, it can be seen that the melting time is reduced by about 3 hours, the melting power is reduced by about 13Kw, the abnormal phenomena such as hanging edge and bridging are obviously reduced, and the success rate of crystal growth is increased from 50% to 75%.

[0091] By adopting the technical scheme, the cover body of the melting auxiliary device is buckled with the tray, the cover body is arranged on the connecting rod, the connecting rod is clamped with the tray, and the connecting rod is clamped with the connecting head, so that the melting auxiliary device is fixed and connected without bolts and other connecting members, and the structure is simple and the installation and disassembly are convenient; the melting auxiliary device is installed in the single crystal furnace during the melting stage and is located above the quartz crucible, auxiliary melting is performed, the hot gas flow in the single crystal furnace is gathered in the quartz crucible, the temperature in the single crystal furnace is increased, the melting of the silicon raw material is accelerated, the abnormal phenomena such as hanging edge and bridging are obviously reduced, and the melting time is shortened; meanwhile, the melting auxiliary device moves up and down in the single crystal furnace, the flow direction of the protective gas is changed, the dust impurities are discharged with the protective gas or are blown into the quartz crucible, the impurities in the silicon melt are removed in combination with the slag sticking process, the phenomenon of impurity bulging in the single crystal pulling process is avoided, the amount of dissolution of the inner wall of the quartz crucible is effectively reduced, the service life of the quartz crucible is increased, the probability of the leakage of silicon and deformation in the crystal growth process is reduced, the impurities introduced due to the dissolution of the inner wall of the quartz crucible in the melt are reduced, the success rate of crystal growth and the quality of single crystal are improved.

[0092] The embodiments of the utility model are described in detail above, but the content described can only be the preferred embodiments of the utility model and cannot be considered as limiting the implementation range of the utility model. Any equivalent change and improvement within the application range of the utility model should still belong to the patent coverage range of the utility model.

Claims

1. A material sizing aid, characterized by: The device comprises a connecting clamp, a connecting rod connected with the connecting clamp, and a heat preservation assembly connected with the connecting rod, the heat preservation assembly comprises a cover and a tray connected with each other, the cover and the tray are movable relative to the connecting rod, the tray is clamped with the connecting rod, the connecting clamp is clamped with the connecting rod, and the cover and the tray have a containing space therebetween.

2. The chemical handling aid of claim 1, wherein: The connecting rod comprises a rod body and first and second abutting members arranged at both ends of the rod body, the first and second abutting members and the rod body are coaxially arranged, and the outer diameter of the second abutting member is larger than that of the rod body.

3. The chemical handling aid of claim 2, wherein: The cover is provided with a first connecting through hole, and the cover is arranged on the connecting rod through the first connecting through hole.

4. The chemical handling aid of claim 3, wherein: The first connecting through hole is coaxially arranged with the cover, and the outer diameter of one axial end of the cover is larger than that of the other axial end.

5. The chemical handling aid of claim 2, wherein: The tray is provided with a second connecting through hole and a first abutting hole, the second connecting through hole is communicated with the first abutting hole, the diameter of the first abutting hole is larger than that of the second connecting through hole, the outer diameter of the first abutting member is larger than that of the second connecting through hole, the tray is arranged on the connecting rod through the second connecting through hole and the first abutting hole, the first abutting member is located in the first abutting hole, and the first abutting member is in abutting cooperation with the first abutting hole.

6. The chemical handling aid of any one of claims 2-5, wherein: The connecting clamp comprises a clamp body, a mounting channel arranged on the clamp body, a second abutting hole arranged on the clamp body, and a mounting hole, the mounting channel is communicated with the second abutting hole, the mounting channel is arranged on the circumferential wall of the clamp body, the second abutting hole is communicated with the outside of one axial end of the clamp body, the second abutting hole is coaxially arranged with the clamp body, so that the second abutting member passes through the mounting channel and enters the second abutting hole, and the second abutting member is in abutting cooperation with the second abutting hole.

7. The chemical handling aid of claim 6, wherein: The length of the mounting channel along the axial direction of the clamp body is not less than the length of the second abutting hole along the axial direction of the clamp body, the width of the mounting channel along the circumferential direction of the clamp body is not less than the maximum outer diameter of the second abutting member, and the width of the mounting channel along the circumferential direction of the clamp body at the intersection of the mounting channel and the second abutting hole is not greater than the diameter of the second abutting hole.

8. The chemical handling aid of claim 7, wherein: The mounting hole is coaxially arranged with the second abutting hole and communicated with the second abutting hole, the mounting hole is communicated with the outside of the other axial end of the clamp body, so as to be connected with a seed crystal clamp.

9. The chemical dosing aid according to any one of claims 1-5 and 7-8, characterized in that: The containing space is provided with a heat preservation member connected with the connecting rod.

10. The chemical dosing aid of claim 9, wherein: The materials of the connecting rod, the connecting clamp, the heat preservation assembly, and the heat preservation member are all graphite.

11. A single crystal furnace system, characterized by: The device comprises a single crystal furnace body and a material melting auxiliary device arranged in the single crystal furnace body, the material melting auxiliary device is connected with a seed crystal clamp in the single crystal furnace body and hung in the single crystal furnace body.

12. The single crystal furnace system of claim 11, wherein: The distance between the circumferential wall of the heat preservation assembly of the material melting auxiliary device and the inner side wall of the flow guide cylinder in the single crystal furnace body is 20-60mm.

13. The single crystal furnace system of claim 12, wherein: The distance between the bottom side of the heat preservation assembly of the material melting auxiliary device and the surface of the melt in the quartz crucible in the single crystal furnace body is 10-30mm.

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