Supporting structure for bearing wafer and epitaxial growth device

Abstract

The utility model relates to a supporting structure for bearing a wafer and an epitaxial growth device. The supporting structure for bearing the wafer comprises a base which comprises a bearing surface and a back surface which are oppositely distributed; the rotating shaft is connected to the back surface of the base; the horizontal adjusting structure is connected to the side, away from the base, of the rotating shaft and comprises a positioning block, ejection blocks and adjusting balls, the top face of the positioning block is connected with the rotating shaft, the multiple adjusting balls are symmetrically distributed around the center of the positioning block, and the multiple ejection blocks correspond to the multiple adjusting balls one to one; each ejector block comprises a first end and a second end which are distributed in the second direction, the first ends of the ejector blocks are connected with the positioning blocks, the second ends are in an arc shape, and the adjusting balls can push the ejector blocks corresponding to the adjusting balls to move in the second direction. According to the utility model, the thickness uniformity of the epitaxial layer grown on the surface of the wafer can be improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, especially to a support structure for bearing wafer and epitaxial growth device. BACKGROUND

[0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. The pace of that growth is driving an increase in the amount of functional density (i.e., the number of interconnected devices per chip area) that is achieved per process generation of ICs. This momentum continues to grow as design and manufacturing process advancements reduce costs while improving performance. For example, the performance of ICs has improved significantly since the first generation of ICs. In addition, the materials, design, and processing techniques have been developed to increase the performance of ICs. However, improvements in these areas have not always been equally implemented. For example, while the design and materials of ICs have been advancing rapidly, the processing techniques used to manufacture ICs have not kept pace. As a result, the performance of ICs has not improved as rapidly as the design and materials of ICs.

[0003] With the increasing demand for special device manufacturing, substrates formed by epitaxial processes have the advantages of low cost and low defects, and are more and more applied to the manufacturing of special devices. The epitaxial process is implemented in an epitaxial growth device. The growth chamber of the epitaxial growth device has a plurality of pedestals for simultaneously carrying a plurality of wafers to facilitate the simultaneous implementation of epitaxial growth processes on the plurality of wafers. However, the horizontal consistency of the plurality of pedestals in the current epitaxial growth device is poor, resulting in poor thickness consistency of the epitaxial layers grown on the surfaces of the wafers carried on different pedestals. Moreover, due to the poor levelness of a single pedestal, the thickness uniformity of the epitaxial layer grown on the surface of the wafer above the single pedestal also needs to be improved.

[0004] Therefore, how to improve the thickness uniformity of the epitaxial layer grown on a single wafer surface, while improving the thickness consistency of the epitaxial layer grown on a plurality of wafer surfaces, so as to improve the yield of semiconductor structures and the performance consistency of a plurality of semiconductor structures, is a technical problem to be solved at present. SUMMARY

[0005] The utility model provides a kind of support structure for bearing wafer and epitaxial growth device for improving the thickness uniformity of the epitaxial layer grown on a single wafer surface, while improving the thickness consistency of the epitaxial layer grown on a plurality of wafer surfaces, so as to improve the yield of semiconductor structures and the performance consistency of a plurality of semiconductor structures.

[0006] According to some embodiments, the utility model provides a kind of support structure for bearing wafer, including:

[0007] Pedestal, including the carrying surface and back surface of relative distribution along the first direction, the carrying surface is used to carry wafer;

[0008] a rotating shaft extending along the first direction and connected to the back of the base;

[0009] a horizontal adjustment structure connected to the side of the rotating shaft away from the base along the first direction, the horizontal adjustment structure comprising a positioning block, a plurality of top blocks and a plurality of adjustment balls, the top surface of the positioning block being connected to the rotating shaft, the plurality of adjustment balls being symmetrically distributed around the center of the positioning block, the plurality of top blocks corresponding to the plurality of adjustment balls one by one, the top block comprising a first end portion and a second end portion distributed along a second direction, the first end portion of the top block being connected to the positioning block, the second end portion being arc-shaped, and the adjustment ball being capable of pushing the top block corresponding thereto to move along the second direction, the second direction being perpendicular to the first direction.

[0010] In some embodiments, the plurality of adjustment balls are distributed around the outer periphery of the positioning block.

[0011] The side surface of the positioning block has a plurality of openings arranged around the center of the positioning block, the plurality of top blocks corresponding to the plurality of openings one by one, the first end portion of the top block being fixed in the positioning block, the second end portion extending out of the opening corresponding thereto, and the second end portion of the top block extending out of the positioning block being arc-shaped away from the end surface of the positioning block.

[0012] In some embodiments, the top block comprises a top rod and a contact portion, the top rod extending along the second direction, one end of the top rod being fixed in the positioning block and the other end extending out of the positioning block from the opening;

[0013] The contact portion is located outside the positioning block and connected to the end of the top rod extending out of the positioning block, the surface of the contact portion away from the top rod being arc-shaped.

[0014] In some embodiments, the cross section of the contact portion is sector-shaped, and the surface of the contact portion away from the top rod is in the shape of a circular arc with a central angle less than or equal to 180 degrees.

[0015] In some embodiments, the inside of the positioning block has a cavity, and the plurality of adjustment balls are located in the cavity.

[0016] The plurality of top blocks are located in the cavity, and the first end portion of the top block is fixedly connected to the side wall of the cavity.

[0017] In some embodiments, the adjustment balls are metal balls, and the top blocks are metal blocks.

[0018] In some embodiments, the horizontal adjustment structure further comprises:

[0019] A plurality of adjusting screws corresponding to the plurality of adjusting balls, the adjusting screws being connected to the adjusting balls below in the first direction for driving the adjusting balls to move up and down in the first direction.

[0020] In some embodiments, further comprising:

[0021] A driving motor connected to the positioning block below in the first direction for driving the positioning block, the rotating shaft and the base to rotate synchronously, and the base, the rotating shaft and the positioning block being coaxially arranged in the first direction.

[0022] The specific implementation further provides an epitaxial growth device, comprising:

[0023] An epitaxial growth chamber;

[0024] The support structure for carrying wafers as described above is located in the epitaxial growth chamber.

[0025] In some embodiments, further comprising:

[0026] A base, the plurality of epitaxial growth chambers being laid on the surface of the base around the center of the base, and the plurality of support structures for carrying wafers being distributed in the plurality of epitaxial growth chambers one by one.

[0027] The support structure for carrying wafers and the epitaxial growth device provided by the utility model can adjust the inclination of the positioning block by pushing the corresponding top block with the adjusting ball, and the inclination of the positioning block can drive the inclination of the base through the rotating shaft, so that the adjustment of the levelness of the base is realized, which can not only improve the thickness uniformity of the epitaxial layer grown on the surface of a single wafer, but also improve the thickness consistency of the epitaxial layer grown on the surfaces of multiple wafers, thereby improving the yield of semiconductor structures and the performance consistency of multiple semiconductor structures. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained from these drawings without any creative effort.

[0029] Figure 1 is a cross-sectional view of a support structure for carrying a wafer in the embodiment of the present application;

[0030] Figure 2 is a cross-sectional view of a horizontal adjustment structure in the embodiment of the present application;

[0031] Figure 3 is a schematic view of the relative position relationship between a top block and an adjustment ball in the embodiment of the present application;

[0032] Figure 4 is a schematic view of the structure of a top block in the embodiment of the present application;

[0033] Figure 5 is a cross-sectional view of another horizontal adjustment structure in the embodiment of the present application;

[0034] Figure 6 is a schematic view of the arrangement of a plurality of epitaxial growth chambers in the epitaxial growth device in the embodiment of the present application. DETAILED DESCRIPTION

[0035] The support structure for carrying a wafer and the epitaxial growth device provided by the present application will be described in detail below with reference to the drawings.

[0036] The present embodiment provides a support structure for carrying a wafer, Figure 1 is a cross-sectional view of a support structure for carrying a wafer in the embodiment of the present application, Figure 2 is a cross-sectional view of a horizontal adjustment structure in the embodiment of the present application, Figure 3 is a schematic view of the relative position relationship between a top block and an adjustment ball in the embodiment of the present application. As shown in Figure 1 、 Figure 2 and Figure 3 , the support structure for carrying a wafer comprises:

[0037] a base 11 comprising a carrying surface and a back surface oppositely distributed along a first direction D1, the carrying surface being used for carrying a wafer;

[0038] a rotating shaft 13 extending along the first direction D1 and connected to the back surface of the base 11;

[0039] A horizontal adjustment structure is connected to the side of the rotating shaft 13 away from the base 11 along the first direction D1, and includes a positioning block 20, a top block 21 and an adjustment ball 22. The top surface 201 of the positioning block 20 is connected to the rotating shaft 13. A plurality of the adjustment balls 22 are symmetrically distributed around the center of the positioning block 20. A plurality of the top blocks 21 correspond to the plurality of the adjustment balls 22. The top block 21 includes a first end and a second end distributed along a second direction D2. The first end of the top block 21 is connected to the positioning block 20. The second end is arc-shaped. The second end of the top block 21 and the projection of the corresponding adjustment ball 22 on the back surface of the base 11 overlap. The adjustment ball 22 can push the corresponding top block 21 to move along the second direction D2. The second direction D2 is perpendicular to the first direction D1.

[0040] In some embodiments, the plurality of the adjustment balls 22 are distributed around the outer periphery of the positioning block 20.

[0041] The side surface of the positioning block 20 has a plurality of openings arranged around the center of the positioning block 20. The plurality of the top blocks 21 correspond to the plurality of the openings. The first end of the top block 21 is fixed in the positioning block 20. The second end extends from the corresponding opening. The second end of the top block 21 extending out of the positioning block 20 is arc-shaped away from the end surface 24 of the positioning block 20.

[0042] Specifically, as Figure 1As shown, the support structure for carrying wafers can be located inside a semiconductor device such as an epitaxial growth device. Taking the case where the support structure for carrying wafers is located inside the epitaxial growth device, the susceptor 11 is located inside an epitaxial growth chamber 10, the rotating shaft 13 extends at least partially outside the epitaxial growth chamber 10, and the horizontal adjustment structure is located below the epitaxial growth chamber 10. The support structure for carrying wafers further includes the susceptor tray 12 located inside the epitaxial growth chamber 10 and distributed around the sidewall and bottom surface of the susceptor 11, the protective shell 14 located below the epitaxial growth chamber 10 and covering the surface of the rotating shaft 13, the functional assembly 17 connected to the lower portion of the rotating shaft 13, and the drive motor 18 connected to the lower portion of the functional assembly. The horizontal adjustment structure is arranged in the functional assembly 17. In an example, the functional assembly 17 further includes a sealing structure and a drive conversion structure. The sealing structure is used to achieve sealing between the epitaxial growth chamber 10 and the rotating shaft 13 and the functional assembly 17, so as to prevent external gas from entering the epitaxial growth chamber 10. The drive conversion structure is used to drive the rotating shaft 13 to rotate under the drive of the drive motor 18. In an example, the epitaxial growth chamber 10 further includes a top cover 15 located above the susceptor 11 in the vertical direction (e.g., the first direction D1). The inner surface of the top cover 15 towards the susceptor 10 is arranged to be inclined relative to the top surface of the top cover 15 towards the susceptor 11. The top cover 15 is located above the susceptor 11, and the inner surface of the top cover 15 towards the susceptor 11 is further covered with a quartz plate 16. The inner surface of the top cover 15 towards the susceptor 11 and the inner surface of the quartz plate 16 towards the susceptor 11 are both arranged to be inclined relative to the top surface of the top cover 15 towards the susceptor 11, so as to uniformly disperse reaction gas in the epitaxial growth chamber 10. The reaction gas is used to form an epitaxial layer.

[0043] As Figure 2As shown, the horizontal adjustment structure includes the positioning block 20, the top block 21 and the adjustment ball 22. In an example, the positioning block 20 is cylindrical, and the positioning block 20 includes a top surface 201 and a bottom surface 202 oppositely distributed along the first direction D1, and the side surface of the positioning block 20 has a plurality of openings. A portion of the top block 21 extends outside the positioning block 20, and another portion is fixed inside the positioning block 20. In the initial state, all the top blocks 21 extend out of the positioning block 20 by the same length, so that the positioning block 20 is in a relatively balanced state. When adjusting the levelness of the base 11 through the horizontal adjustment structure, the adjustment ball 22 is pushed to move upward along the first direction D1. Since the normal projection of the surface of the second end of the top block 21 away from the first end (i.e. the end surface 24 of the top block 21) on the back surface of the base 11 and the projection of the adjustment ball 22 corresponding thereto on the back surface of the base 11 are in contact, the adjustment ball 22 will contact the end surface 24 of the top block 21 during upward movement, and push the top block 21 to move along the second direction D2 towards the positioning block 20. When only one top block 21 moves in the direction towards the positioning block 20, the length of the top block 21 extending out of the positioning block 20 is less than the length of the other top blocks 21 extending out of the positioning block 20, thereby breaking the balance of the positioning block 20, causing the positioning block 20 to tilt, and the tilt of the positioning block 20 drives the base 11 connected thereto to tilt, thereby achieving adjustment of the levelness of the base 11. After the adjustment ball 22 stops moving upward, the adjustment ball 22 and the top block 21 corresponding thereto remain relatively stationary, so that the positioning block 20 and the base 11 reach a new balanced state. The levelness of the base in the specific embodiment refers to the height difference between the highest point and the lowest point of the base.

[0044] The specific embodiment sets the horizontal adjustment structure inside the support structure for carrying the wafer, and the horizontal adjustment structure includes the positioning block 20, the top block 21 and the adjustment ball 22, so that the horizontal degree (or inclination) of the pedestal 11 can be adjusted through the cooperation of the positioning block 20, the top block 21 and the adjustment ball 22, and the thickness uniformity of the epitaxial layer grown on the wafer surface of the pedestal 11 is improved. Moreover, the horizontal degree of the pedestals in a plurality of epitaxial growth chambers 10 in the epitaxial growth device is uniformly adjusted, so that the thickness uniformity of the epitaxial layer grown on the wafer surface in a plurality of the epitaxial growth chambers 10 is improved. At the same time, the end surface 24 (i.e. the surface in contact with the adjustment ball 22 during the adjustment of the horizontal degree of the pedestal) of the top block 21 extending out of the part of the positioning block 20 is set as an arc, which on the one hand can avoid scratching the adjustment ball 22 when the adjustment ball 22 is in contact with the top block 21, and helps to prolong the service life of the adjustment ball 22; on the other hand, it also helps to increase the contact area of the adjustment ball 22 and the end surface 24 of the top block 21, so as to simplify the operation of the horizontal adjustment structure adjusting the horizontal degree of the pedestal.

[0045] In some embodiments, the top block 21 includes a top rod 211 and a contact part 212, the top rod 211 extends along the second direction D2, and one end of the top rod 211 is fixed in the positioning block 20 and the other end extends out of the positioning block 20 from the opening.

[0046] The contact part 212 is located outside the positioning block 21 and connected with the end of the top rod 211 extending out of the positioning block 21, and the surface of the contact part 212 away from the top rod 211 is arc-shaped.

[0047] Specifically, the surface of the contact part 212 away from the top rod 211 is the end surface 24 of the second end of the top block 21 away from the positioning block 20. By setting the structure of the top block 21 to include the long strip-shaped top rod 211 and the contact part 212 with an arc-shaped surface, the top block 21 can move in the horizontal direction (for example, the second direction D2) under the action of the adjustment ball 22, and the adjustment ball 22 can be prevented from being scratched. In an example, the horizontal adjustment structure further includes a connecting shaft 25 located at least partially on the top surface of the positioning block 20, the upper end of the connecting shaft 25 is connected with the rotating shaft 13, and the lower end of the connecting shaft 25 is fixedly connected with the positioning block 20. In an example, the diameter of the opening is greater than the diameter of the top rod 211, so that the top rod 211 can move freely in the opening.

[0048] Figure 4is a structural schematic diagram of the top block in the embodiment of the present application. In some embodiments, the cross section of the contact portion 212 is in the shape of a sector, and the surface of the contact portion 212 away from the top rod 211 is in the shape of a circular arc with a central angle less than or equal to 180 degrees.

[0049] In other embodiments, the contact portion 212 is in the shape of a sphere.

[0050] In an example, as shown in (a) of FIG. 2, the cross section of the contact portion 212 is in the shape of a sector, and the surface of the contact portion 212 away from the top rod 211 is in the shape of a circular arc with a central angle less than or equal to 180 degrees, so as to increase the contact area of the contact portion 212 with the top rod 211, and further enhance the structural stability of the top block 21. Figure 4 Figure 4 In another example, as shown in (b) of FIG. 2, the contact portion 212 is in the shape of a sphere, so as to increase the area of the region that the top block 21 can contact with the adjustment ball 22 while simplifying the manufacturing process of the top block 21, thereby improving the manufacturing flexibility of the horizontal adjustment structure.

[0051] In order to further prolong the service life of the horizontal adjustment structure, in some embodiments, the adjustment ball 22 is a metal ball, and the top block 21 is a metal block.

[0052] In some embodiments, the horizontal adjustment structure further comprises:

[0053] a plurality of adjustment screws 23 corresponding to the plurality of adjustment balls 22, the adjustment screws 23 being connected below the adjustment balls 22 along the first direction D1, for driving the adjustment balls 22 to move up and down along the first direction D1.

[0054] In some embodiments, the support structure for carrying wafers further comprises:

[0055] a driving motor 18 connected below the positioning block 20 along the first direction D1, for driving the positioning block 20, the rotating shaft 13 and the base 11 to rotate synchronously, and the base 11, the rotating shaft 13 and the positioning block 20 being coaxially arranged along the first direction D1.

[0056] In order to further simplify the horizontal level adjustment operation of the base, in some embodiments, the horizontal adjustment structure comprises four top blocks 21 and four adjustment balls 22, and the four top blocks 21 are symmetrically arranged around the center of the positioning block 20, and the four adjustment balls 22 are symmetrically arranged around the center of the positioning block 20.

[0057] Figure 5 ​is a sectional view of another horizontal adjustment structure in the embodiment of the present application. Figure 5 As shown in FIG. 2, the positioning block 20 has a cavity 50 inside, and a plurality of adjustment balls 22 are located in the cavity 50.

[0058] A plurality of top blocks 21 are located in the cavity 50, and the first end of the top block 21 is fixedly connected with the side wall of the cavity 50.

[0059] For example, the horizontal adjustment structure includes the positioning block 20, the top block 21 and the adjustment ball 22. In an example, the positioning block 20 is cylindrical, and the positioning block 20 includes a top surface 201 and a bottom surface 202 oppositely distributed along the first direction D1, and the positioning block 20 has the cavity 50 inside. All of the top blocks 21 and all of the adjustment balls 22 are located in the cavity 50. The first end of the top block 21 is fixedly connected with the side wall (i.e. the inner wall of the positioning block 20) of the cavity 50, the second end is towards the center of the cavity 50, and a plurality of the top blocks 21 are respectively symmetrically around the center of the cavity 50. In the initial state, all of the top blocks 21 are not in contact with the adjustment ball 22, i.e. all of the top blocks 21 are in the same stress state, so that the positioning block 20 is in a relatively balanced state. When adjusting the levelness of the base 11 through the horizontal adjustment structure, the adjustment screw 23 located below the adjustment ball 22 pushes the adjustment ball 22 to move upward along the first direction D1. Since the normal projection of the second end of the top block 21 away from the surface of the first end (i.e. the end surface 24 of the top block 21) on the back surface of the base 11 and the projection of the corresponding adjustment ball 22 on the back surface of the base 11 are in contact, the adjustment ball 22 will be in contact with the end surface 24 of the top block 21 in the process of upward movement, and will extrude and push the top block 21 to move along the second direction D2 (for example, move away from the center of the cavity 50). When only one top block 21 moves along the second direction D2, the stress state of one top block 21 will be different from that of the other top blocks 21, thereby breaking the balance of the positioning block 20, so that the positioning block 20 is tilted, and the tilt of the positioning block 20 drives the base 11 connected thereto to tilt, thereby achieving the adjustment of the levelness of the base 11. After the adjustment ball 22 stops moving upward, the adjustment ball 22 and the corresponding top block 21 remain relatively stationary, so that the positioning block 20 and the base 11 reach a new balanced state.

[0060] The present embodiment also provides an epitaxial growth device, Figure 6is a schematic view of arrangement of multiple epitaxial growth chambers in an epitaxial growth device in the embodiment of the present application. As shown in Figure 6 The epitaxial growth device comprises:

[0061] an epitaxial growth chamber 10;

[0062] a support structure for carrying a wafer as described above (see Figures 1-5 ), and the support structure for carrying a wafer is located in the epitaxial growth chamber 10.

[0063] In some embodiments, the epitaxial growth device further comprises:

[0064] a base 60, multiple epitaxial growth chambers 10 are laid on the surface of the base 60 around the center of the base 60, and multiple support structures for carrying a wafer are distributed one by one in multiple epitaxial growth chambers 10.

[0065] Specifically, the base 60 comprises a front surface and a back surface distributed oppositely, and multiple epitaxial growth chambers 10 are arranged in the direction parallel to the front surface of the base 60 on the front surface of the base 60. The support structure for carrying a wafer is arranged in each epitaxial growth chamber 10, so that the levelness of the susceptor 11 in each epitaxial growth chamber 10 can be adjusted respectively, thereby helping to ensure the thickness consistency of the epitaxial layer grown on the surface of the wafer in multiple epitaxial growth chambers 10. The multiple in the embodiment of the present application means more than two.

[0066] The support structure for carrying a wafer and the epitaxial growth device provided by the embodiment of the present application can adjust the levelness of the susceptor by arranging a horizontal adjustment structure below the rotating shaft connected with the susceptor, and the horizontal adjustment structure comprises a positioning block, a plurality of top blocks and a plurality of adjustment balls. The top surface of the positioning block is connected with the rotating shaft, the plurality of adjustment balls are distributed symmetrically around the center of the positioning block, the plurality of top blocks correspond to the plurality of adjustment balls one by one, the top block comprises a first end portion and a second end portion distributed in a second direction, the first end portion of the top block is connected with the positioning block, the second end portion is arc-shaped, and the adjustment ball can push the corresponding top block to move in the second direction, so that the inclination of the positioning block can be adjusted by pushing the corresponding top block to move by the adjustment ball, and the inclination of the positioning block can drive the inclination of the susceptor through the rotating shaft, thereby adjusting the levelness of the susceptor. Not only can the thickness uniformity of the epitaxial layer grown on the surface of a single wafer be improved, but also the thickness consistency of the epitaxial layer grown on the surface of multiple wafers can be improved, thereby improving the yield of semiconductor structures and the performance consistency of multiple semiconductor structures.

[0067] It should be noted that the terms "comprise" and "have" and their conjugates, involved in the file of the present application, are intended to cover non-exclusive inclusion. The terms "first", "second", etc. are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence, unless the context clearly indicates otherwise, and it should be understood that such data used in this way can be interchanged under appropriate circumstances. The term "one or more" can be used to describe a feature, structure or characteristic in singular sense, or can be used to describe a combination of features, structures or characteristics in plural sense, depending at least in part on the context. The term "based on" can be understood as not necessarily intended to express a set of exclusive factors, but can instead, depending at least in part on the context, allow the presence of other factors not necessarily explicitly described. In addition, the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. Furthermore, in the above description, the description of well-known components and technologies is omitted to avoid unnecessary confusion of the concept of the present application. In each of the above embodiments, each embodiment focuses on the difference from other embodiments, and the same / similar parts between each embodiment can be referred to each other.

[0068] The above is only the preferred embodiment of the present application, and it should be noted that for those skilled in the art, without departing from the principles of the present application, a number of improvements and refinements can be made, and these improvements and refinements should be considered within the scope of protection of the present application.

Claims

1. A support structure for carrying a wafer, characterized by, The utility model relates to a support structure for carrying wafer, comprising: a base comprising a carrying surface and a back surface oppositely distributed along a first direction, the carrying surface being used for carrying wafer; a rotating shaft extending along the first direction and connected to the back surface of the base; a horizontal adjusting structure connected to the side of the rotating shaft away from the base along the first direction, the horizontal adjusting structure comprising a positioning block, a top block and adjusting balls, the top surface of the positioning block being connected to the rotating shaft, a plurality of the adjusting balls being symmetrically distributed around the center of the positioning block, a plurality of the top blocks corresponding to a plurality of the adjusting balls one by one, the top block comprising a first end and a second end distributed along a second direction, the first end of the top block being connected to the positioning block, the second end being arc-shaped, and the adjusting ball being capable of pushing the top block corresponding thereto to move along the second direction, the second direction being perpendicular to the first direction.

2. The support structure for carrying wafers according to claim 1, wherein, A plurality of the adjusting balls are distributed around the outer periphery of the positioning block. The side surface of the positioning block has a plurality of openings arranged around the center of the positioning block, a plurality of the top blocks corresponding to a plurality of the openings one by one, the first end of the top block being fixed in the positioning block, the second end extending out of the opening corresponding thereto, and the second end of the top block extending out of the positioning block being arc-shaped away from the end surface of the positioning block.

3. The support structure for carrying wafers according to claim 2, wherein, The top block comprises a top rod and a contact part, the top rod extending along a second direction, one end of the top rod being fixed in the positioning block and the other end extending out of the positioning block from the opening; The contact part is located outside the positioning block and connected to the end of the top rod extending out of the positioning block, the surface of the contact part away from the top rod being arc-shaped.

4. The support structure for carrying wafers according to claim 3, wherein, The cross section of the contact part is sector-shaped, and the surface of the contact part away from the top rod is in the shape of a circular arc with a central angle less than or equal to 180 degrees.

5. The support structure for carrying wafers according to claim 1, wherein, The inside of the positioning block has a cavity, a plurality of the adjusting balls being located in the cavity; A plurality of the top blocks are located in the cavity, and the first end of the top block is fixedly connected to the side wall of the cavity.

6. The support structure for carrying wafers according to claim 1, wherein, The adjusting ball is a metal ball, and the top block is a metal block.

7. The support structure for carrying wafers according to claim 1, wherein, The horizontal adjusting structure further comprises: a plurality of adjusting screws corresponding to a plurality of the adjusting balls, the adjusting screws being connected below the adjusting balls along the first direction, for driving the adjusting balls to move up and down along the first direction.

8. The support structure for carrying wafers according to claim 1, wherein, Further comprising: a driving motor connected below the positioning block along the first direction, for driving the positioning block, the rotating shaft and the base to rotate synchronously, and the base, the rotating shaft and the positioning block being coaxially arranged along the first direction.

9. An epitaxial growth apparatus, characterized by comprising: Comprising: an epitaxial growth chamber; the support structure for carrying wafer as claimed in claim 1, and the support structure for carrying wafer being located in the epitaxial growth chamber.

10. The epitaxial growth apparatus according to claim 9, wherein Further comprising: a base, a plurality of the epitaxial growth chambers being laid on the surface of the base around the center of the base, and a plurality of the support structures for carrying wafer being distributed in a plurality of the epitaxial growth chambers one by one.

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