Heat dissipation equipment and chemical vapor deposition equipment

Abstract

The utility model provides heat dissipation equipment and chemical vapor deposition equipment, the heat dissipation equipment comprises a ceramic cavity and a heat dissipation pipe, the ceramic cavity comprises an upper surface and a side wall, and the outer surface of the side wall is provided with a groove; and the heat dissipation pipe is arranged in the groove. The heat dissipation pipes are arranged in the grooves in the side wall of the ceramic cavity, so that the contact area of the heat dissipation pipes and the ceramic cavity is increased, and the heat conduction efficiency is remarkably improved; in addition, the size of the groove is set to be the same as that of the radiating pipe, and the installation and replacement process of the radiating pipe is simplified.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, concretely relates to a heat dissipation equipment, especially to a heat dissipation equipment in chemical vapor deposition equipment. BACKGROUND

[0002] At present, in the field of semiconductor manufacturing, the heat dissipation equipment in chemical vapor deposition equipment, the cavity and the heat dissipation pipe are separated, the heat dissipation pipe is fixed on the outer wall of the cavity through Teflon buckle, before deposition, the cavity is cleaned, fluorine ion generated by RPS (remote plasma source) is used to clean the process cavity, and a thin film is formed on the cavity wall to prevent the adhesion of silicon dioxide in the subsequent deposition process; when starting deposition operation, the temperature of the cavity will stably rise to 120 DEG C to meet the environmental conditions required by high-density plasma deposition; after deposition, RPS is started again, fluorine ion is transported through the divergent pipeline to clean the cavity environment, and a layer of silicon dioxide film is re-deposited on the surface of the ceramic cavity to prepare for the next deposition operation.

[0003] However, the prior art also has some problems. First, since the cavity and the heat dissipation pipe are separated and only fixed by Teflon buckle, this design may result in low heat conduction efficiency and affect the cooling effect of the cavity. Secondly, during the cleaning process of the cavity, fluorine ion generated by the remote plasma source dissociation reacts with the aluminum nitride layer (AlN) on the ceramic cavity to form aluminum fluoride, which adheres to the ceramic cavity, but aluminum fluoride is unstable with the increase of temperature. When a thin layer of high-density plasma silicon dioxide is deposited on the surface of the ceramic cavity, plasma is generated by the plasma dissociation process gas, which will quickly generate heat. When the temperature is raised to 250-650 DEG C, the adhesion of AlN on the ceramic cavity will become poor with the increase of temperature, and the surface will fall off blocky particles, which will fall on the wafer surface. Therefore, it is urgent to improve the heat dissipation equipment in chemical vapor deposition equipment and improve its heat dissipation efficiency. UTILITY MODEL CONTENTS

[0004] In view of the poor heat dissipation effect of the heat dissipation equipment in the prior art chemical vapor deposition equipment, the application provides a heat dissipation equipment and a chemical vapor deposition equipment.

[0005] In one aspect, a heat dissipation equipment is provided, comprising:

[0006] A ceramic cavity, the ceramic cavity comprises a side wall with a certain thickness, and the outer surface of the side wall is provided with a groove;

[0007] A heat dissipation pipe is arranged in the groove.

[0008] Optionally, the ceramic cavity is a cylinder, and the groove is arranged circumferentially along the outer surface of the ceramic cavity, and the groove is an annular groove.

[0009] Optionally, at least two turns of the heat dissipation pipes are arranged along the axial direction of the ceramic cavity.

[0010] Optionally, the thickness of the side wall is 10-25 mm, and the diameter of the heat dissipation pipe is 10-25 mm.

[0011] Optionally, the diameter of the groove is equal to the diameter of the heat dissipation pipe, and the depth of the heat dissipation pipe embedded in the ceramic cavity is greater than or equal to 1 / 2 of the diameter of the heat dissipation pipe.

[0012] Optionally, the distance between the upper and lower heat dissipation pipes along the axial direction of the ceramic cavity is 3-5 cm.

[0013] Optionally, the heat dissipation pipe comprises a copper pipe.

[0014] In another aspect, the application also provides a chemical vapor deposition device, comprising:

[0015] a ceramic cavity, wherein a side wall of the ceramic cavity is provided with a heat dissipation pipe;

[0016] a remote plasma source support arranged above the ceramic cavity and used for fixing a remote plasma source;

[0017] a support shell used for supporting the ceramic cavity.

[0018] Optionally, the device further comprises a heat exchange circulation system connected with the heat dissipation pipe.

[0019] As described above, the heat dissipation device and the chemical vapor deposition device provided by the application have at least the following beneficial technical effects:

[0020] In the heat dissipation device, the heat dissipation pipe is arranged in the outer side wall of the ceramic cavity, the contact area of the heat dissipation pipe and the ceramic cavity is increased, the distance between the heat dissipation pipe and the inside of the cavity is reduced, the heat dissipation efficiency is improved, the heat dissipation pipe can more quickly absorb and dissipate the heat generated by the cavity, the cavity is maintained in a stable and low working temperature range, not only the temperature fluctuation and wafer pollution are reduced, but also a more stable and controllable environment is created for the chemical vapor deposition process. In addition, by setting the size of the groove to be the same as the size of the heat dissipation pipe, the installation and replacement process of the heat dissipation pipe is facilitated. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 FIG. 1 shows a structural schematic diagram of the heat dissipation device provided in Embodiment 1.

[0022] Figure 2 a cross-sectional view along the AA` direction of the ceramic cavity shown. Figure 1 a cross-sectional view along the AA` direction of the ceramic cavity shown.

[0023] Figure 3 a structural schematic view of a chemical vapor deposition device provided in Embodiment Two.

[0024] Reference signs

[0025] 10, ceramic cavity; 11, upper surface; 12, side wall; 13, groove; 20, heat dissipation pipe; 30, remote plasma source support; 40, support shell. DETAILED DESCRIPTION

[0026] The embodiments of the present application will be described in detail hereinafter with specific reference to the drawings. Other advantages and effects of the present application will be easily understood by those skilled in the art from the content disclosed in the specification. The present application can also be implemented or applied in other different embodiments, and the details in the specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present application.

[0027] It should be noted that the diagrams provided in the present embodiment only schematically illustrate the basic concept of the present application, and the diagrams only show the components related to the present application, not the number, shape and size of the components in actual implementation. The shape, number, position relationship and proportion of the components in actual implementation can be changed at will under the premise of realizing the technical solutions of the present application, and the component layout form can also be more complex.

[0028] Embodiment One

[0029] The present embodiment provides a heat dissipation device, such as Figure 1 As shown, a structural schematic view of the heat dissipation device provided in the present embodiment is shown; the heat dissipation device provided in the present embodiment includes: Figure 1 As can be seen, the heat dissipation device provided in the present embodiment includes: a ceramic cavity 10 including an upper surface 11 and a side wall 12, and the outer surface of the side wall 12 is provided with a groove 13; a heat dissipation pipe 20 is arranged in the groove.

[0030] Generally, the ceramic cavity 10 can be adjusted according to specific needs, such as being cylindrical, square, or elliptical. Specifically, the ceramic cavity 10 in this embodiment is cylindrical. Generally, the material of the ceramic cavity 10 includes: alumina (Al2O3), aluminum nitride (AlN), or silicon carbide (SiC), and also includes ceramic matrix composite materials formed by adding carbon fibers or graphene nanosheets. The groove 13 is arranged circumferentially along the outer surface of the ceramic cavity 10. Optionally, the specific shape of the groove 13 can be designed according to the shape of the ceramic cavity 10. The groove 13 is parallel to the bottom surface of the ceramic cavity 10 and is set as an arc-shaped structure; alternatively, the groove 13 is set as a vertically wavy structure on the outer surface of the ceramic cavity 10; alternatively, the groove 13 adopts an asymmetrical wavy structure. The design of the groove 13 being parallel to the bottom surface of the ceramic cavity 10 and being set as an arc-shaped structure is relatively simple. The design of the groove 13 being set as a vertically wavy structure on the outer surface of the ceramic cavity 10 has a larger contact area with the ceramic cavity and better heat dissipation, but the structural design is more complex. Specifically, in this embodiment, the groove 13 is configured as an arc-shaped structure parallel to the bottom surface of the ceramic cavity 10.

[0031] Generally, the materials of heat pipes 20 include: pure copper pipes, copper-aluminum alloy (lightweight + high thermal conductivity), pulsating heat pipes, or loop heat pipes, etc. Generally, the number of heat pipes 20 can be designed according to actual needs, taking into account the size, cross-sectional area, thickness, coefficient of thermal expansion, and other specific factors of the ceramic cavity 10.

[0032] Generally, the thickness of the ceramic cavity 10 is between 10 mm and 25 mm, and the height is between 200 mm and 500 mm. Generally, the total area of ​​the heat dissipation pipe 20 embedded in the ceramic cavity 10 should not exceed 50% of the cavity wall thickness to maintain mechanical strength. Therefore, generally, the diameter of the groove 13 is equal to the diameter of the heat dissipation pipe 20, and the embedding depth of the heat dissipation pipe 20 should be greater than or equal to 1 / 2 of the diameter of the heat dissipation pipe 20; that is, at least 1 / 2 of the heat dissipation pipe 20 is installed in the groove. Generally, to ensure good heat dissipation, at least two rings of the heat dissipation pipe 20 are arranged along the axial direction of the ceramic cavity. To prevent magnetic field interaction between the heat dissipation pipes 20, the vertical spacing between the heat dissipation pipes 20 is between 3 and 5 cm. Specifically, in this embodiment, two rings of heat dissipation pipes 20 are arranged along the axial direction of the ceramic cavity, with a vertical spacing of 5 cm between the heat dissipation pipes.

[0033] Specifically, such as Figure 2 The image shown is a cross-sectional view of the ceramic cavity 10 provided in this embodiment along the AA' direction; Figure 2As can be seen, in this embodiment, the sidewall 12 and upper surface 11 of the ceramic cavity 10 are solid ceramic, and the thickness L of the sidewall 12 is 10 mm, the diameter d of the heat dissipation pipe 20 is 10 mm, and the cross-section of the groove 13 is a semi-circle with a diameter D of 10 mm. The diameter of the groove 13 is the same as the diameter of the heat dissipation pipe 20 to ensure that the heat dissipation pipe 20 can be properly fitted into the groove 13. This ensures both heat dissipation efficiency and overall mechanical strength of the cavity, preventing thermal stress cracking. By setting the groove 13 on the outer surface of the ceramic cavity 10 and placing the heat dissipation pipe 20 within the groove 13, the heat dissipation pipe 20 can be closer to the interior of the cavity, improving the heat dissipation effect. Furthermore, installing the heat dissipation pipe 20 within the groove 13 eliminates the need for the snap-fit ​​fixing found in existing technologies, facilitating the replacement of the heat dissipation pipe.

[0034] This utility model discloses a heat dissipation device that significantly improves heat conduction efficiency by embedding a heat dissipation pipe into an annular groove on the side wall of a ceramic cavity, allowing it to directly contact the cavity surface. This rapidly stabilizes the cavity temperature, reduces wafer contamination caused by aluminum fluoride film shedding, improves deposition process yield, and facilitates the installation and replacement of the heat dissipation pipe by setting the groove size to match the heat dissipation pipe size.

[0035] Example 2

[0036] This embodiment also provides a chemical vapor deposition apparatus, such as... Figure 3 The diagram shown is a structural schematic of the chemical vapor deposition apparatus provided in this embodiment; Figure 3 As can be seen, the chemical vapor deposition equipment includes a ceramic cavity 10, a remote plasma source support 30, and a supporting shell 40. The ceramic cavity 10 includes the ceramic cavity provided in Embodiment 1. The ceramic cavity 10 is a container for the chemical vapor deposition process, and a heat dissipation pipe 20 is provided on the outside. At least half of the heat dissipation pipe 20 is embedded in the side wall of the ceramic cavity 10. The remote plasma source support 30 is disposed above the upper body of the ceramic cavity 10 and is used to fix the remote plasma source so that fluorine ions uniformly cover the cavity surface, improving the cleaning and deposition effect. The supporting shell 40 is used to support the ceramic cavity 10, and the ceramic cavity 10 is inverted and placed on the supporting shell 40.

[0037] Specifically, the remote plasma source support 30 includes a support platform and a support bracket. One end of the support bracket is connected to the support housing 40, and the other end is connected to the support platform. Optionally, the number of support brackets can be adjusted according to the size and weight of the actual equipment; in this embodiment, three support brackets are provided.

[0038] Optionally, the chemical vapor deposition equipment provided in this embodiment is also equipped with a heat exchange circulation system connected to the heat dissipation pipe 20 to maintain the cavity temperature below 120°C, avoid the negative impact of high temperature on the wafer surface and cavity material, and reduce the contamination of the cavity surface caused by chemical reactions (such as the generation of AlF3).

[0039] In summary, the chemical vapor deposition equipment provided in this embodiment achieves a highly efficient and stable chemical vapor deposition process by integrating a ceramic cavity, a heat dissipation system, a remote plasma source support, and a heat exchange circulation system, which helps to improve the performance and reliability of semiconductor products.

[0040] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A heat dissipation device, characterized in that, include: A ceramic cavity, the ceramic cavity including a sidewall with a certain thickness, the outer surface of the sidewall being provided with a groove; A heat dissipation pipe is disposed within the groove.

2. The heat dissipation device according to claim 1, characterized in that, The ceramic cavity is a cylinder, and the groove is arranged circumferentially along the outer surface of the ceramic cavity. The groove is an annular groove.

3. The heat dissipation device according to claim 1, characterized in that, At least two grooves are provided along the axial direction of the ceramic cavity.

4. The heat dissipation device according to claim 3, characterized in that, Along the axial direction of the ceramic cavity, the heat dissipation pipes are spaced 3-5 cm apart vertically.

5. The heat dissipation device according to claim 1, characterized in that, The sidewall thickness is between 10mm and 25mm, and the heat dissipation pipe diameter is between 10mm and 25mm.

6. The heat dissipation device according to claim 1, characterized in that, The diameter of the groove is equal to the diameter of the heat dissipation pipe.

7. The heat dissipation device according to claim 1, characterized in that, The depth to which the heat dissipation pipe is embedded in the ceramic cavity is greater than or equal to 1 / 2 of the diameter of the heat dissipation pipe.

8. The heat dissipation device according to claim 1, characterized in that, The heat dissipation pipe includes copper pipes.

9. A chemical vapor deposition apparatus, characterized in that, include: A ceramic cavity, wherein heat dissipation pipes are provided on the side wall of the ceramic cavity; A remote plasma source support is disposed above the ceramic cavity for fixing the remote plasma source; A supporting shell is used to support the ceramic cavity.

10. The chemical vapor deposition apparatus according to claim 9, characterized in that, It also includes a heat exchange circulation system, which is connected to the heat dissipation pipe.

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