Display device

Abstract

The utility model relates to the technical field of display, in particular to a display device, and aims to solve the technical problem of providing a display device capable of meeting application in high-frequency and high-voltage driving occasions, the display device comprises a substrate and light-emitting modules distributed on the same surface of the substrate in an array, each light-emitting module comprises at least one light-emitting body and a transistor, the transistor is electrically connected with the luminous body and used for controlling the working state of the luminous body, the transistor is a GaN transistor, and compared with a Si-based transistor, the GaN transistor has higher electron mobility and voltage resistance, and high-frequency and high-voltage driving of the display device can be achieved.

Description

Technical Field

[0001] This utility model relates to the field of display technology, and in particular to a display device. Background Technology

[0002] GaN is a wide-bandgap semiconductor material with characteristics such as high luminous efficiency, high electron mobility, high thermal conductivity, high hardness, and low dielectric constant. Compared with Si-based transistors, GaN transistors made using this material have higher electron mobility and higher voltage withstand performance.

[0003] Currently, the driving force used for display devices is mainly Si-based transistors, but they have low electron mobility and poor voltage withstand performance, which is not conducive to the application of display devices in high-frequency and high-voltage driving applications. Summary of the Invention

[0004] One objective of this application is to provide a display device that can meet the requirements of high-frequency, high-voltage driving applications. To achieve this objective, the technical solution adopted in this application is as follows:

[0005] A display device, characterized in that it comprises:

[0006] Substrate, used to support the light-emitting module;

[0007] A plurality of light-emitting modules are arrayed on the same side of the substrate. Each light-emitting module includes at least one light-emitting element, a transistor, and a first-type GaN layer located below the light-emitting element and the transistor. The transistor is electrically connected to the light-emitting element through the first-type GaN layer and is used to control the working state of the light-emitting element. The transistor is a GaN transistor.

[0008] Its further feature is that,

[0009] The display device also includes an undoped GaN layer, and the substrate, the undoped GaN layer, and the light-emitting module are distributed sequentially from bottom to top.

[0010] Furthermore, the light-emitting element is an LED chip;

[0011] Furthermore, the LED chip is a blue LED chip, which is either a Mini LED chip or a Micro LED chip.

[0012] Furthermore, the substrate is sapphire.

[0013] Furthermore, the first type of GaN layer is convex, including horizontally distributed connecting portions and protrusions protruding from the top of the connecting portions. The protrusions are located below the light emitter and constitute part of the light emitter. The connecting portions extend from the transistor to the light emitter and are used to electrically connect the transistor in the same light-emitting module to the light emitter.

[0014] Furthermore, each transistor includes a source, a drain, a gate, a connection portion, and a first insulating layer. The connection portion, the source and drain, the first insulating layer, and the gate are distributed sequentially from bottom to top. The source and drain are arranged side by side at the bottom end of the first insulating layer and separated by the first insulating layer. The bottom ends of both are electrically connected to the connection portion.

[0015] Furthermore, each light-emitting body includes, from bottom to top, a connecting portion, a protrusion, a light-emitting layer, a second-type GaN layer, a first insulating layer, and a P-electrode. The first-type GaN layer is an N-type GaN layer, and the second-type GaN layer is a P-type GaN layer. The bottom end of the protrusion is electrically connected to the drain in the same light-emitting module through the connecting portion. The first insulating layer extends from the transistor to the light-emitting body and covers the entire surface of the light-emitting body containing the second-type GaN layer. The connecting portion at the bottom end of the protrusion serves as the N-electrode of the light-emitting body and is electrically connected to the drain to form a common cathode structure. A local area at the bottom end of the P-electrode penetrates the first insulating layer and is electrically connected to the second-type GaN layer.

[0016] Furthermore, the display device also includes a second insulating layer that covers the entire surface including the gate surface and the first insulating layer surface. A local area at the bottom of the P electrode passes through the second insulating layer and the first insulating layer in sequence and is electrically connected to the second type GaN layer.

[0017] Furthermore, the light-emitting module also includes a light color conversion unit, which covers at least the surface of the light-emitting body and is used to convert the light emitted by the light-emitting body into colored light.

[0018] Furthermore, the display device also includes a third insulating layer located at the bottom of the light color conversion unit, covering the entire surface including the P electrode surface and the second insulating layer surface.

[0019] Furthermore, the light color conversion unit includes a phosphor layer and a first color filter. The third insulating layer, phosphor layer, and first color filter are distributed sequentially from bottom to top. The phosphor layer is used to convert the color of the light emitted by the light source into white, and the first color filter is used to convert the white light into at least three primary colors: red, green, and blue.

[0020] Furthermore, the phosphor layer comprises yellow phosphor, or the phosphor layer comprises red phosphor and green phosphor.

[0021] Furthermore, the light color conversion unit includes a second color filter, which covers the surface of the light emitter and is used to convert the light emitted by the light emitter into at least three primary colors: red, green, and blue.

[0022] Furthermore, the red, green, and blue corresponding light-emitting areas are respectively the red light area, green light area, and blue light area. The red light area, green light area, and blue light area are arranged alternately from left to right to form a pixel unit, and / or the red light area, green light area, and blue light area are arranged alternately from top to bottom to form a pixel unit.

[0023] Furthermore, the display device also includes a contrast enhancement layer, and the first color filter or the second color filter includes a light color conversion area, the light color conversion area corresponding to the light emitting surface of the light emitter, and the contrast enhancement layer is located in the gap between two adjacent light color conversion areas.

[0024] Furthermore, the contrast enhancement layer is black or gray.

[0025] Furthermore, the display device also includes a first connecting line, a second connecting line, a third connecting line, a fourth connecting line, a first pad, a second pad, and a third pad. The first pad is staggered along the row edges of the upper and lower sides of the substrate, the second pad is staggered along the column edges of the left and right sides of the substrate, and the third pad is located in the four corner regions of the substrate. The first connecting line is spaced apart along the column direction of the substrate, electrically connecting the source electrodes of the same column of light-emitting modules, extending one end towards the row edge of the substrate, and electrically connecting to the first pad. The first pad is used to connect to the negative terminal of an external power supply. The second connecting line is spaced apart along the row direction of the substrate, electrically connecting the gate electrodes of the same row of light-emitting modules, extending one end towards the column edge of the substrate, and electrically connecting to the second pad. The third connecting line is spaced apart along the row direction of the substrate, connecting the P electrodes of the same row of light-emitting modules, extending one end towards the column edge of the substrate, and electrically connecting to the fourth connecting line. The fourth connecting line is distributed along the four edges of the substrate and is electrically connected to the positive terminal of an external power supply through the third pads in the four corner regions.

[0026] The above-described solution of this utility model achieves the following beneficial effects: The transistor in the display device of this application is a GaN transistor. During display, the light-emitting element is driven and controlled by the GaN transistor. Compared with Si-based transistors, GaN transistors have higher electron mobility and voltage withstand characteristics, enabling high-frequency, high-voltage driving of the display device. Attached Figure Description

[0027] Figure 1 This is a cross-sectional view of a single pixel unit in this application;

[0028] Figure 2 This is a top view of the display device of this application.

[0029] Figure 3 This is a cross-sectional view of a single pixel unit in another embodiment of this application;

[0030] Figure 4 This is a schematic cross-sectional view of the substrate and epitaxial layer in the display device fabrication method of this application;

[0031] Figure 5 This is a schematic cross-sectional view of the structure after the channel is formed in the display device fabrication method of this application.

[0032] Figure 6 This is a schematic cross-sectional view of the structure after the formation of the first etching groove and the light-emitting element in the display device fabrication method of this application;

[0033] Figure 7 This is a schematic cross-sectional view of the structure after the second etching trench is formed in the display device fabrication method of this application;

[0034] Figure 8 This is a schematic cross-sectional view of the structure after the source and drain electrodes are formed in the display device fabrication method of this application.

[0035] Figure 9 This is a schematic cross-sectional view of the structure after the formation of the first insulating layer and the gate in the display device fabrication method of this application;

[0036] Figure 10 This is a schematic cross-sectional view of the structure after the formation of the second insulating layer and the P electrode in the display device fabrication method of this application.

[0037] Figure 11 This is a schematic cross-sectional view of the structure after the formation of the third insulating layer in the display device fabrication method of this application;

[0038] Figure 12 This is a schematic cross-sectional view of the phosphor layer after it has been formed in the display device fabrication method of this application.

[0039] Reference numerals in the figures: 1. Substrate; 2. Undoped GaN layer; 3. Light emitter; 4. Transistor; 5. First insulating layer; 6. Second insulating layer; 7. Third insulating layer; 8. Phosphor layer; 9. First color filter; 10. Contrast enhancement layer; 11. Second color filter; 12. Channel; 13. First etching trench; 14. Second etching trench.

[0040] First connecting line 101, second connecting line 102, third connecting line 103, fourth connecting line 104, first pad 201, second pad 202, third pad 203, fourth pad 204;

[0041] Source 401, drain 402, gate 403, first type GaN layer 301, light-emitting layer 302, second type GaN layer 303, P electrode 304. Detailed Implementation

[0042] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0043] It should be noted that the terms "comprising" and "having" and any variations thereof in the specification, claims and accompanying drawings of this invention are intended to cover non-exclusive inclusion. For example, a process, method, apparatus, product or device that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such process, method, product or device.

[0044] The following discloses a specific embodiment of a GaN transistor driving a display device, with reference to... Figure 1 The display device includes a substrate 1, a light-emitting module distributed on the same side of the substrate, and an undoped GaN layer 2. The substrate 1, the undoped GaN layer 2, and the light-emitting module are distributed sequentially from bottom to top. The substrate 1 is sapphire.

[0045] The light-emitting modules are arranged in an array on the substrate. Each light-emitting module includes a set of light-emitting elements 3 and transistors 4. The transistors 4 are electrically connected to the light-emitting elements 3 and are used to control the on or off of the light-emitting elements 3. In this case, the transistors 4 and the light-emitting elements 3 in the same light-emitting module share a first-type GaN layer 301. The first-type GaN layer 301 is convex and includes horizontally distributed connecting portions and protrusions protruding from the top of the connecting portions. The protrusions are located below the light-emitting elements and constitute part of the light-emitting elements. The connecting portions extend from the transistors to the light-emitting elements and are used to electrically connect the transistors and the light-emitting elements.

[0046] The specific structures of transistor 4 and light emitter 3 are as follows:

[0047] Transistor 4 is a GaN transistor, including a source 401, a drain 402, a gate 403, a first insulating layer 5, and a connection portion of a first-type GaN layer 301. The source 401 and drain 402 are located above the connection portion and electrically connected to it at their bottom ends. The first insulating layer 5 covers the surfaces of the source 401 and drain 402, with its bottom portion penetrating the connection portion, separating the source 401 and drain 402. The gate 403 is located at the top of the first insulating layer 5 and is separated from the source 401 and drain 402 by the first insulating layer 5.

[0048] The light emitter 3 includes a protrusion of a first-type GaN layer 301, a light-emitting layer 302, a second-type GaN layer 303, and an N-electrode and a P-electrode 304, which are distributed sequentially from bottom to top. The first-type GaN layer below the protrusion is the N-electrode. In this embodiment, the N-electrode is electrically connected to the drain 402 of the transistor 4 through a connecting part to form a common cathode structure. The second-type GaN layer 303 is a P-type GaN layer, and the P-electrode 304 is located above the second-type GaN layer 303 and is electrically connected to the second-type GaN layer 303.

[0049] In the above structure, the first type GaN layer 303 is set as a convex shape, which facilitates the electrical connection between the transistor 4 and the light emitter 3. Furthermore, this common cathode structure is located at the bottom of the light emitter 3 and the transistor 4, which does not affect the side or top light emission of the light emitter, thus improving the light emission efficiency. In addition, the transistor 4 and the light emitter 3 share the same N-type GaN material. During fabrication, the N-type GaN material is deposited, and the transistor 4 and the light emitter 3 are formed in the corresponding areas of the N-type GaN material using a suitable process. No secondary epitaxial growth is required, simplifying the fabrication process.

[0050] To avoid electrical interference between two adjacent light emitters 3, the display device is also provided with a second insulating layer 6 and a third insulating layer 7. The second insulating layer 6 covers the entire surface including the gate surface and the first insulating layer surface, and the third insulating layer 7 covers the entire surface including the P electrode surface and the second insulating layer surface.

[0051] In this application, the light emitter 3 is a blue LED chip, which can be a Mini LED chip or a Micro LED chip. To obtain colored light, a light color conversion unit is provided on the light-emitting surface of the blue LED chip. The light color conversion unit includes a phosphor layer 8, a first color filter 9, and a third insulating layer 7. The phosphor layer 8 and the first color filter 9 are distributed sequentially from bottom to top.

[0052] In this embodiment, the phosphor layer 8 covers the surface of the third insulating layer above the light emitter 3 and is used to convert the blue light emitted by the blue LED chip into white light. In addition, the phosphor layer 8 also fills the area above the transistor 4, so that the light-emitting module forms a horizontal and flat surface, which facilitates the installation and process packaging of the first color filter 9 in subsequent processes.

[0053] In addition, in this embodiment, the first color filter 9 includes a color conversion area and gaps disposed between the color conversion areas. The color conversion areas correspond one-to-one with the light-emitting surfaces of the light-emitting body 3, and are used to convert white light into three primary colors: red, green, and blue. The light-emitting areas corresponding to red, green, and blue are red light area, green light area, and blue light area, respectively. The red light area, green light area, and blue light area are arranged alternately from left to right to form a pixel unit, or the red light area, green light area, and blue light area are arranged alternately in the horizontal direction to form a pixel unit. At the same time, the red light area, green light area, and blue light area are arranged alternately in the column direction to form a pixel unit.

[0054] The gap is located above the transistor 4 and is filled with black or gray material, preferably black material. The black material is cured to form a contrast enhancement layer 10 to improve the display contrast.

[0055] It should be noted that, in another embodiment, the light color conversion unit includes a second color filter 11, that is, the second color filter 11 is directly disposed on the surface of the blue LED chip. The second color filter 11 also includes a color conversion area and gaps disposed between the color conversion areas. The color conversion areas correspond one-to-one with the light emitters and are used to convert the blue light emitted by the three blue LED chips in the same pixel unit into red light, green light, and blue light, respectively. The corresponding areas are the red light area, green light area, and blue light area, respectively. The red light area, green light area, and blue light area are distributed from left to right in a staggered manner to form a pixel unit (see reference). Figure 3 Alternatively, red, green, and blue light regions are distributed sequentially and alternately along the horizontal direction to form a pixel unit, while red, green, and blue light regions are distributed sequentially and alternately along the column direction to form a pixel unit.

[0056] Compared to the light color conversion method of directly converting blue light into red, green, and blue light through a second color filter, the method in the above embodiments of this application, which first converts blue light into white light through a phosphor layer and then converts white light into red, green, and blue light through a first color filter, is more conducive to improving the light color uniformity of the display device.

[0057] In addition, the light-emitting modules are arranged in an array structure. To facilitate the connection of the light-emitting modules in the middle of the substrate to an external power supply, this application also provides a first connecting line 101, a second connecting line 102, a third connecting line 103, a fourth connecting line 104, a first pad 201, a second pad 202, and a third pad 203 in the display device. (Refer to...) Figure 2The first pad 201 is staggered along the row edges of the upper and lower sides of the substrate, the second pad 202 is staggered along the column edges of the left and right sides of the substrate, and the third pad 203 is located in the four corner regions of the substrate 1. The first connecting line 201 is spaced along the column direction of the substrate, electrically connecting the source electrode 401 of the same column of light-emitting modules, extending one end towards the row edge of the substrate 1 and electrically connecting to the first pad 201. The first pad is used to connect to the negative terminal of the external power supply. The second connecting line 102 is spaced along the row direction of the substrate 1, electrically connecting the gate electrode 403 of the same row of light-emitting modules, extending one end towards the column edge of the substrate 1 and electrically connecting to the second pad 202. The third connecting line 103 is spaced along the row direction of the substrate, connecting the P electrode 304 of the same row of light-emitting modules, extending one end towards the column edge of the substrate 1 and electrically connecting to the fourth connecting line 104. The fourth connecting line 104 is distributed along the four edges of the substrate 1 and is electrically connected to the positive terminal of the external power supply through the third pad 203 in the four corner regions.

[0058] The staggered distribution of the first and second pads in this application reduces the number of pads on one side of the display device. This is beneficial for increasing the size of the pads without reducing the effective area of ​​the display device. Especially in scenarios where the display device has many pins on the corresponding package substrate, it is beneficial for improving the accuracy of subsequent connections between the display device and other devices or external circuits.

[0059] During display, the third pad serves as the input terminal, and the first pad serves as the output terminal. The positive voltage is input to the P electrode 304 of the light emitter via the third pad 203, the fourth connection line 104, and the third connection line 103. Simultaneously, an external control signal is transmitted to the gate 403 via the second pad 202 and the second connection line 102 to control the conduction and on-time of the transistor. The current signal is transmitted sequentially to the P electrode of the light emitter via the third pad 203, the fourth connection line 104, and the third connection line 103, and then transmitted to the N-type gate 404 via the P electrode, the P-type GaN layer, and the light-emitting layer. The current is transmitted from the N-type GaN layer to the drain of the transistor. At this time, the source and drain of the transistor are in the conducting state. Therefore, the current is output through the drain, source, first connection line and first pad of the transistor, thus forming a current loop. When the current passes through the light emitter, it excites the light-emitting layer inside the light emitter to emit light. In this embodiment, the light emitter is a blue LED chip. The blue light emitted by the chip produces white light under the action of the phosphor layer. The white light forms red light, green light and blue light under the action of the first color filter. The red light, green light and blue light are mixed to form the desired colored light.

[0060] In this display device, each light-emitting element is controlled by its respective transistor. When the display device is working, the corresponding transistor is controlled through the first pad to the third pad and the first connection line to the fourth connection line, thereby controlling the opening or closing of the corresponding light-emitting element and realizing active addressing drive of the light-emitting element. For example, the external control signal inputs the control voltage to the transistor gate through the second pad 202 and the second connection line 102, and sets the position coordinates of each light-emitting element in the display device as (X1, Y1), (X2, Y2)...(Xn, Yn), where n is an integer. The first pad 201 includes P1, P2...Pm, which correspond to the first row, the second row...the mth row in the array, respectively. The third pad 203 includes K1, K2...Km, which correspond to the first column, the second column...the mth column in the array, respectively, where m is an integer. When P1 and K1 are turned on, the transistor at position (X1, Y1) in the first row and the first column corresponding to them is turned on and the light-emitting element is lit. For example, when P1, K1, P2, and K2 are turned on, the transistors at their corresponding positions (X1, Y1) and (X2, Y2) are simultaneously turned on, and the light-emitting elements light up simultaneously, thus realizing the addressing and driving of the light-emitting elements. Similarly, addressing and driving control of one or more other light-emitting elements can be realized.

[0061] The following discloses a method for fabricating a display device, used to fabricate a display device with the above-mentioned functions and structure. The specific fabrication process includes: S1, providing a substrate 1, which is a sapphire substrate. An epitaxial layer is disposed on the substrate 1, the epitaxial layer including an undoped GaN layer 2, a first-type GaN layer 301, a light-emitting layer 302, and a second-type GaN layer 303 distributed sequentially from bottom to top; in this embodiment, the first-type GaN layer 301 is an N-type GaN layer, the second-type GaN layer 303 is a P-type GaN layer, and the light-emitting layer 302 is a quantum well layer. (Refer to...) Figure 4 .

[0062] S2. Using photolithography etching, several channels are etched in the epitaxial layer, dividing the epitaxial layer into several array distribution regions, specifically:

[0063] S21. Coat the surface of the second type GaN layer 303 with a first photoresist;

[0064] S22. Expose the first photoresist based on the first mask;

[0065] S23. Development, to expose the area of ​​the epitaxial layer to be etched;

[0066] S24. Using dry etching or wet etching, the area to be etched in the epitaxial layer is etched to form a channel 12. The channel 12 penetrates the undoped GaN layer 3 and divides the epitaxial layer into several array distribution areas.

[0067] S25. Clean and remove residual first photoresist, refer to Figure 5 .

[0068] S3. Divide each area into a light-emitting area and a driving area.

[0069] S4. Fabricating a light emitter 3 in the light-emitting region and a transistor 4 in the driving region, including: S41. Using a photolithography etching process, etching a local area of ​​the epitaxial layer to a depth reaching a local area of ​​the first-type GaN layer 301 to form a first etching trench 13 and a bump, the bump being the light emitter 3, specifically:

[0070] S411. Coat the entire surface containing the second type GaN layer with a second photoresist;

[0071] S412. Expose the second photoresist based on the second mask;

[0072] S413, Development, to expose the areas to be etched in each region;

[0073] S414. Using dry etching or wet etching, the areas to be etched in each region are etched to form the first etching groove 13 and the bump, which is the light-emitting body 3.

[0074] In step S4, the first type GaN layer 301 is etched into a convex shape, including horizontally distributed connecting parts and convex parts protruding from the top of the connecting parts. The connecting parts are the area where the transistor 4 is located, and the convex parts are the area where the light emitter 3 is located.

[0075] S415, cleaning to remove residual second photoresist, reference. Figure 6 .

[0076] S42. Using photolithography etching, the first type GaN layer 301 below the first etching trench 13 is etched to form the second etching trench 14, specifically:

[0077] S421. Coat the entire surface containing the light-emitting element with a third photoresist;

[0078] S422. Expose the third photoresist based on the third mask;

[0079] S423, Development, to expose the area of ​​the first type GaN layer to be etched below the first etching trench 13;

[0080] S424. Using dry etching or wet etching, the area to be etched in the first type GaN layer below the first etching trench 13 is etched to form the second etching trench 14.

[0081] S425, Clean and remove residual third photoresist, refer to Figure 7 .

[0082] S43, using photolithography, deposition, and lift-off processes, patterned source and drain electrodes are fabricated on the surface of the first type GaN layer 301. The source and drain electrodes are distributed on both sides of the second etch trench 14 and are electrically connected to the connection portions of the first type GaN layer 301 below both sides of the second etch trench 14. Specifically,

[0083] S431. A fourth photoresist is coated on the inner surface of the first etching trench 13, the inner surface of the second etching trench 14, and the entire surface containing the second GaN layer 303.

[0084] S432. Based on the fourth photomask, expose and develop the fourth photoresist;

[0085] S433. Electron beam evaporation or magnetron sputtering deposition is used to deposit a conductive material on the surface of the fourth photoresist. In this embodiment, the conductive material includes, but is not limited to, titanium, chromium, aluminum, nickel, gold, silver, and platinum. Preferably, it is titanium, aluminum, nickel, and gold, or chromium, aluminum, nickel, and gold. In this embodiment, Ti / Al / Ti / Ni / Ti / Au are stacked sequentially, or Cr / Al / Cr / Ni / Cr / Au are stacked sequentially. Ti and Cr are used as adhesive materials, and Al, Au, Ni, etc. are used as conductive layers.

[0086] S434. Based on the developed pattern, the conductive material is stripped to obtain a patterned source and a patterned drain.

[0087] S435, Clean and remove residual fourth photoresist, refer to Figure 8 .

[0088] S44, using PECVD or chemical vapor deposition (CVD / ALD), the first insulating material is grown in the second etching tank 14 and on the entire surface including the source electrode 401 and the drain electrode 402 to form the first insulating layer 5.

[0089] S45, using photolithography, deposition and lift-off processes, a patterned gate 403 is fabricated above the first insulating layer 5. Specifically, S451, a fifth photoresist is coated on the entire surface including the surface of the first insulating layer.

[0090] S452. Based on the fifth photomask, expose and develop the fifth photoresist;

[0091] S453. Electron beam evaporation or magnetron sputtering deposition is used to deposit a conductive material on the surface of the fifth photoresist. In this embodiment, the conductive material includes, but is not limited to, titanium, chromium, aluminum, nickel, gold, silver, and platinum. Preferably, it is titanium, aluminum, nickel, and gold, or chromium, aluminum, nickel, and gold. In this embodiment, Ti / Al / Ti / Ni / Ti / Au are stacked sequentially, or Cr / Al / Cr / Ni / Cr / Au are stacked sequentially. Ti and Cr are used as adhesive materials, and Al, Au, Ni, etc. are used as conductive layers.

[0092] S454. Based on the developed pattern, the conductive material is stripped to obtain the patterned gate 403.

[0093] S455, Clean and remove residual fifth photoresist, refer to Figure 9 .

[0094] S5. Using PECVD or chemical vapor deposition (CVD / ALD), a second insulating material is grown on the entire surface including the gate surface and the first insulating layer surface to form a second insulating layer 6.

[0095] S6. Using photolithography and etching processes, a localized area of ​​the second insulating layer 6 and the first insulating layer 5 is etched to form a third etching trench, exposing the contact area of ​​the second-type GaN layer. Specifically, a P-electrode opening is created above the light-emitting element.

[0096] S61. Coat the entire surface including the second insulating layer with a sixth photoresist;

[0097] S62. Expose the sixth photoresist based on the sixth mask;

[0098] S63. Development, to expose local areas of the second insulating layer 6 and the first insulating layer 5;

[0099] S64. Using dry etching or wet etching, sequentially etch local areas of the second insulating layer 6 and the first insulating layer 5 to form a third etching trench.

[0100] S65. Clean and remove residual sixth photoresist.

[0101] S7. Using photolithography, deposition, and lift-off processes, a P-electrode 304 is fabricated above the light-emitting element. The bottom end of the P-electrode 304 penetrates the third etching trench and is electrically connected to the type II GaN layer 303. Specifically,

[0102] S71. Coat the entire surface containing the second insulating layer 6 with the seventh photoresist;

[0103] S72. Based on the seventh mask, expose and develop the seventh photoresist;

[0104] S73. Electron beam evaporation or magnetron sputtering deposition is used to deposit conductive materials on the surface of the sixth photoresist and in the third etching tank. In this embodiment, the conductive materials include, but are not limited to, titanium, chromium, aluminum, nickel, gold, silver, and platinum, preferably titanium, aluminum, nickel, and gold, or chromium, aluminum, nickel, and gold. In this embodiment, Ti / Al / Ti / Ni / Ti / Au are stacked sequentially, or Cr / Al / Cr / Ni / Cr / Au are stacked sequentially, wherein Ti and Cr are used as adhesive materials, and Al, Au, Ni, etc. are used as conductive layers.

[0105] S74. Based on the developed pattern, the conductive material is stripped to obtain a patterned P electrode.

[0106] S75. Clean and remove residual sixth photoresist, refer to... Figure 10 .

[0107] S8. Using PECVD or chemical vapor deposition (CVD / ALD), a third insulating material is grown on the entire surface including the P electrode to form the third insulating layer 7. (Refer to...) Figure 11 .

[0108] S9. A phosphor material is coated onto the entire surface including the third insulating layer 7 using a screen printing process. The phosphor material is then cured to form a phosphor layer 8. (Refer to...) Figure 12 .

[0109] S10. A first color filter 9 is disposed on the surface of the phosphor layer. The first color filter 9 includes several light color conversion regions, each corresponding to the light-emitting surface of the light-emitting body. Each light color conversion region has a red light-emitting region, a green light-emitting region, and a blank transparent region arranged in the same way as the light-emitting body array. The light-emitting regions include materials such as perovskite or quantum dots to achieve light color conversion.

[0110] S11. Fill the gap between two adjacent color conversion zones with black material to form a contrast enhancement layer 10. (Refer to...) Figure 1 Thus, a display device is obtained.

[0111] In steps S44, S5, and S8 above, the first insulating material, the second insulating material, and the third insulating material include, but are not limited to, at least one of SiO2 and SiNx, with SiO2 being preferred in this embodiment.

[0112] It is understood that the above detailed description of this utility model is for illustrative purposes only and is not intended to limit the technical solutions described in the embodiments of this utility model. Those skilled in the art should understand that modifications or equivalent substitutions can still be made to this utility model to achieve the same technical effects; as long as the usage requirements are met, they are all within the protection scope of this utility model.

Claims

1. A display device, characterized by comprising: It comprises: a substrate (1) for carrying light-emitting modules; a plurality of light-emitting modules arranged in an array on the same side of the substrate (1), each of the light-emitting modules comprising at least one light emitter (3), a transistor (4), a first type GaN layer (301) located below the light emitter and the transistor, the transistor (4) being electrically connected to the light emitter (3) through the first type GaN layer (301) and used for controlling the working state of the light emitter (3); the first type GaN layer is an N-type GaN layer, and the transistor (4) is a GaN transistor.

2. A display device according to claim 1, characterised in that The display device further comprises an undoped GaN layer (2), the substrate (1), the undoped GaN layer (2), and the light-emitting modules are sequentially arranged from bottom to top, the light emitter (3) is an LED chip, the LED chip is a blue LED chip, and the blue LED chip is a Mini LED chip or a Micro LED chip.

3. A display device according to claim 1 or 2, characterised in that, The first type GaN layer (301) is convex, comprising a horizontally arranged connecting portion and a convex portion protruding from the top end of the connecting portion, the convex portion is located below the light emitter (3) and constitutes part of the light emitter (3), and the connecting portion extends from the transistor (4) to the light emitter (3) and is used for electrically connecting the transistor (4) and the light emitter (3) in the same light-emitting module.

4. A display device according to claim 3, characterised in that, The transistor (4) comprises a source electrode (401), a drain electrode (402), a gate electrode (403), a connecting portion, and a first insulating layer (5), which are sequentially arranged from bottom to top, the source electrode (401) and the drain electrode (402) are arranged side by side at the bottom end of the first insulating layer (5) and are separated by the first insulating layer (5), and the bottom end is electrically connected to the connecting portion; The light emitter comprises a connecting portion, a convex portion, a light-emitting layer (302), a second type GaN layer (303), a first insulating layer (5), and a P electrode (304), which are sequentially arranged from bottom to top, the second type GaN layer (303) is a P-type GaN layer, the bottom end of the convex portion is electrically connected to the drain electrode (402) in the same light-emitting module through the connecting portion, the first insulating layer (5) extends from the transistor (4) to the light emitter (3) and covers the entire surface of the light emitter (3) including the surface of the second type GaN layer (303), the connecting portion at the bottom end of the convex portion serves as an N electrode of the light emitter (3) and is electrically connected to the drain electrode (402) to form a common cathode structure, and the bottom end of the P electrode (304) penetrates the first insulating layer (5) and is electrically connected to the second type GaN layer (303).

5. A display device according to claim 4, characterised in that, The display device further comprises a second insulating layer (6) covering the entire surface including the surface of the gate electrode (403) and the surface of the first insulating layer (5), and the bottom end of the P electrode (304) sequentially penetrates the second insulating layer (6) and the first insulating layer (5) and is electrically connected to the second type GaN layer (303).

6. A display device according to claim 5, characterised in that, The light-emitting module further comprises a light color conversion unit, which covers at least the surface of the light emitter (3) and is used for converting the light emitted by the light emitter (3) into colored light. The display device further comprises a third insulating layer (7), which is located at the bottom end of the light color conversion unit and covers the entire surface of the P electrode (304) and the second insulating layer (6).

7. A display device according to claim 6, characterised in that The light color conversion unit comprises a fluorescent powder layer (8) and a first color filter (9), and the third insulating layer (7), the fluorescent powder layer (8) and the first color filter (9) are sequentially arranged from bottom to top. The fluorescent powder layer (8) is used for converting the color of the light emitted by the light emitter (3) into white light, and the first color filter (9) is used for converting the white light into at least three primary colors: red, green and blue. The fluorescent powder layer (8) contains yellow fluorescent powder, or the fluorescent powder layer (8) contains red fluorescent powder and green fluorescent powder.

8. A display device according to claim 6, characterised in that The light color conversion unit comprises a second color filter (11), and the third insulating layer (7) and the second color filter (11) are sequentially arranged from bottom to top. The second color filter (11) is used for converting the color of the light emitted by the light emitter (3) into at least three primary colors: red, green and blue.

9. A display device according to claim 7 or 8, characterised in that, The display device further comprises a contrast enhancement layer (10), and the first color filter (9) or the second color filter (11) comprises a light color conversion area corresponding to the light emitting surface of the light emitter (3). The contrast enhancement layer (10) is located in the gap between adjacent two light color conversion areas.

10. A display device according to claim 9, characterised in that, The display device further comprises a first connecting line (101), a second connecting line (102), a third connecting line (103), a fourth connecting line (104), a first pad (201), a second pad (202), and a third pad (203). The first pad (201) is staggered along the row direction edges of the upper and lower sides of the substrate (1), the second pad (202) is staggered along the column direction edges of the left and right sides of the substrate (1), and the third pad (203) is located at the four corner regions of the substrate (1). The first connecting line (101) is spaced along the column direction of the substrate (1), electrically connects the source (401) of the same column of light emitting modules, extends to the row direction edge of the substrate (1) at one end, and is electrically connected with the first pad (201), which is used for connecting the negative electrode of an external power supply. The second connecting line (102) is spaced along the row direction of the substrate (1), electrically connects the gate (403) of the same row of light emitting modules, extends to the column direction edge of the substrate (1) at one end, and is electrically connected with the second pad (202). The third connecting line (103) is spaced along the row direction of the substrate (1), connects the P electrode (304) of the same row of light emitting modules, extends to the column direction edge of the substrate (1) at one end, and is electrically connected with the fourth connecting line (104). The fourth connecting line (104) is distributed along the four peripheral edges of the substrate (1), and is electrically connected with the positive electrode of an external power supply through the third pad (203) at two or four corner regions.

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