Crystal pulling device for monocrystalline silicon production and preparation

Abstract

The crystal pulling device comprises a protective shell and a single crystal furnace with the top being open, the single crystal furnace is located in the protective shell, the top of the single crystal furnace is located above the protective shell, an installation cavity is formed between the single crystal furnace and the protective shell, and the single crystal furnace is arranged in the installation cavity. A heating assembly and a heat preservation layer are installed in the installation cavity, the heating assembly covers the lower portion of the side face of the single crystal furnace and makes contact with the side face of the single crystal furnace, and the space between the heating assembly and the protective shell is filled with the heat preservation layer. The crystal pulling device for monocrystalline silicon production and preparation can effectively reduce crystal pulling energy consumption and save energy under the condition that the monocrystalline silicon preparation technology process is not changed, meanwhile, the crystal pulling device has a high heat preservation effect, unstable crystal pulling caused by furnace temperature overflow is avoided, the temperature in the furnace is increased in a heat preservation mode, and therefore the monocrystalline silicon melting efficiency is improved, and the production cost is reduced. And crystal pulling preparation of monocrystalline silicon is facilitated.

Description

Technical Field

[0001] This utility model relates to the technical field of silicon crystal preparation equipment, specifically a crystal pulling device for the production and preparation of single crystal silicon. Background Technology

[0002] The development and widespread application of new energy sources have led to a significant increase in battery demand. Monocrystalline silicon, as a crucial material for battery fabrication, is typically produced using the Czochralski method in a single-crystal furnace. This process includes heating the molten material, crystal pulling, crystal shrinking, shoulder formation, shoulder rotation, constant-diameter growth, finishing, and furnace shutdown. Currently, during monocrystalline silicon production, significant heat leakage from the furnace makes temperature control difficult and can negatively impact the process. To ensure the furnace temperature meets the requirements for monocrystalline silicon pulling, the heating module power needs to be increased. This results in high energy consumption and significant energy waste, which is detrimental to monocrystalline silicon crystal pulling. Utility Model Content

[0003] The technical problem to be solved by this utility model is to overcome the existing defects and provide a crystal pulling device for monocrystalline silicon production. Under the condition that the monocrystalline silicon preparation process remains unchanged, it can effectively reduce the energy consumption of crystal pulling and save energy. At the same time, this crystal pulling device has a high heat preservation effect, which avoids furnace temperature overflow and crystal pulling instability. Furthermore, by increasing the furnace temperature through heat preservation, it can improve the efficiency of monocrystalline silicon material preparation, which facilitates the crystal pulling preparation of monocrystalline silicon and can effectively solve the problems in the background art.

[0004] To achieve the above objectives, this utility model provides the following technical solution: a crystal pulling device for producing monocrystalline silicon, comprising a protective shell and a monocrystalline furnace with an open top, the monocrystalline furnace being located inside the protective shell and the top of the monocrystalline furnace being located above the protective shell, an installation cavity being provided between the monocrystalline furnace and the protective shell, a heating component and a heat insulation layer being installed in the installation cavity, the heating component being covered on the lower side of the monocrystalline furnace and in contact with the side of the monocrystalline furnace, the heat insulation layer being filled between the heating component and the protective shell, and a graphite electrode being installed on the side of the heating component, the graphite electrode penetrating and extending to the bottom of the protective shell.

[0005] As a preferred technical solution of this utility model, the protective shell includes a bottom support frame and a protective shell. The protective shell is installed on top of the bottom support frame, and the protective shell and the bottom support frame are connected and fixed by a first positioning pin.

[0006] As a preferred embodiment of the present invention, the protective shell further includes an annular sealing cover, which is installed on the top of the protective shell by a second positioning pin, and the inner side of the annular sealing cover contacts the upper part of the side of the single crystal furnace.

[0007] As a preferred embodiment of this utility model, a mounting base is fixed at the bottom of the inner cavity of the protective shell, the graphite electrode is installed in the mounting base, and the heating component is connected and fixed to the mounting base by positioning screws.

[0008] As a preferred technical solution of this utility model, the heating component has a receiving groove on its side corresponding to the position of the positioning screw, and multiple positioning screws and graphite electrodes are provided.

[0009] As a preferred technical solution of this utility model, the top of the mounting base is provided with a positioning groove, and the heating component is provided with a positioning hole corresponding to the position of the positioning groove. The bottom of the single crystal furnace is fixed with a positioning column that is compatible with the positioning hole and the positioning groove.

[0010] Compared with the prior art, the beneficial effects of this utility model are:

[0011] The crystal pulling device for monocrystalline silicon production of this utility model can effectively reduce crystal pulling energy consumption and save energy without changing the monocrystalline silicon preparation process. At the same time, this crystal pulling device has a high heat preservation effect, which avoids furnace temperature overflow and crystal pulling instability. Furthermore, the heat preservation method increases the furnace temperature, thereby improving the monocrystalline silicon material conversion efficiency and facilitating the crystal pulling preparation of monocrystalline silicon. Attached Figure Description

[0012] Figure 1 This is a cross-sectional structural diagram of the present invention;

[0013] Figure 2 for Figure 1 A magnified structural diagram of point A in the middle.

[0014] In the figure: 1 bottom support frame, 2 mounting base, 3 heating component, 4 graphite electrode, 5 positioning screw, 6 single crystal furnace, 7 positioning post, 8 protective shell, 9 insulation layer, 10 annular sealing cover, 11 first positioning pin, 12 second positioning pin. Detailed Implementation

[0015] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0016] Please see Figure 1-2This utility model provides a technical solution: a crystal pulling device for monocrystalline silicon production, comprising a protective shell and a monocrystalline furnace 6 with an open top, facilitating the addition of monocrystalline silicon preparation raw materials into the furnace 6. The furnace 6 is located inside the protective shell, which protects it. The top of the furnace 6 is positioned above the protective shell, facilitating the addition of materials. An installation cavity is provided between the furnace 6 and the protective shell, and a heating component 3 and an insulation layer 9 are installed within the cavity. The heating component 3 includes, but is not limited to, other components. The heating element is an electric heating plate or an electromagnetic induction heater. The insulation layer 9 includes, but is not limited to, soft felt or flame-retardant insulation cotton. The heating element 3 is covered on the lower side of the single crystal furnace 6 and is in contact with the side of the single crystal furnace 6. The heating element 3 is controlled to work and heats the single crystal furnace 6, which facilitates the processing and preparation of single crystal silicon. The insulation layer 9 is filled between the heating element 3 and the protective shell. The insulation layer 9 is used for heat preservation of the heating element 3 to prevent heat leakage and cause unstable temperature inside the single crystal furnace 6, while reducing energy consumption and facilitating the preparation of single crystal silicon.

[0017] A graphite electrode 4 is mounted on the side of the heating component 3, and the graphite electrode 4 penetrates and extends to the bottom of the protective shell. The graphite electrode 4 facilitates the use of the heating component 3. A mounting base 2 is fixed at the bottom of the inner cavity of the protective shell, and the graphite electrode 4 is installed in the mounting base 2 for easy installation and use. The heating component 3 is connected and fixed to the mounting base 2 by a positioning screw 5, which facilitates the installation of the heating component 3. If the heating component 3 malfunctions, the positioning screw 5 can be removed to take the heating component 3 out of the protective shell for easy maintenance and replacement.

[0018] The protective shell includes a bottom support frame 1 and a protective shell 8. The protective shell 8 is installed above the bottom support frame 1, and the protective shell 8 and the bottom support frame 1 are connected and fixed by a first positioning pin 11. The protective shell also includes an annular sealing cover 10. The annular sealing cover 10 is installed on the top of the protective shell 8 by a second positioning pin 12. Several first positioning pins 11 and second positioning pins 12 are provided to improve their connection strength. The inner side of the annular sealing cover 10 contacts the upper side of the single crystal furnace 6. The annular sealing cover 10 is located at the top of the protective shell to prevent damage to the insulation layer 9, heating components 3 and other components inside the protective shell.

[0019] The heating component 3 has a receiving groove on its side corresponding to the position of the positioning screw 5. The receiving groove is used to store the positioning screw 5 and prevent the positioning screw 5 from protruding and affecting the installation and use of the single crystal furnace 6. Multiple positioning screws 5 and graphite electrodes 4 are provided. Multiple positioning screws 5 improve the installation strength of the heating component 3, and graphite electrodes 4 facilitate the heating use of the heating component 3.

[0020] The mounting base 2 has a positioning groove on its top, and the heating component 3 has a positioning hole at the position corresponding to the positioning groove. The bottom of the single crystal furnace 6 is fixed with a positioning post 7 that is compatible with the positioning hole and positioning groove. The positioning post 7 is locked in the positioning groove through the positioning hole, which facilitates the installation and use of the single crystal furnace 6.

[0021] The parts not disclosed in this utility model are all prior art, and their specific structures, materials, and working principles will not be described in detail. Although embodiments of this utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of this utility model, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A crystal pulling apparatus for producing single-crystal silicon, comprising a protective outer shell and a single-crystal furnace (6) with an open top, characterized in that: The single crystal furnace (6) is located inside the protective shell, and the top of the single crystal furnace (6) is located above the protective shell. An installation cavity is provided between the single crystal furnace (6) and the protective shell. A heating component (3) and a heat insulation layer (9) are installed in the installation cavity. The heating component (3) is covered on the lower side of the single crystal furnace (6) and is in contact with the side of the single crystal furnace (6). The heat insulation layer (9) is filled between the heating component (3) and the protective shell. A graphite electrode (4) is installed on the side of the heating component (3) and extends through and to the bottom of the protective shell.

2. The crystal pulling apparatus for producing single-crystal silicon according to claim 1, characterized in that: The protective shell includes a bottom support frame (1) and a protective shell (8). The protective shell (8) is installed above the bottom support frame (1), and the protective shell (8) and the bottom support frame (1) are connected and fixed by a first positioning pin (11).

3. The crystal pulling apparatus for producing single-crystal silicon according to claim 2, characterized in that: The protective shell also includes an annular sealing cover (10), which is installed on the top of the protective shell (8) by a second positioning pin (12), and the inner side of the annular sealing cover (10) contacts the upper side of the single crystal furnace (6).

4. The crystal pulling apparatus for producing single-crystal silicon according to claim 1, characterized in that: The bottom of the inner cavity of the protective shell is fixed with a mounting base (2), the graphite electrode (4) is installed in the mounting base (2), and the heating component (3) is connected and fixed to the mounting base (2) by a positioning screw (5).

5. The crystal pulling apparatus for producing single-crystal silicon according to claim 4, characterized in that: The heating component (3) has a receiving groove on its side corresponding to the position of the positioning screw (5), and multiple positioning screws (5) and graphite electrodes (4) are provided.

6. The crystal pulling apparatus for producing single-crystal silicon according to claim 5, characterized in that: The mounting base (2) has a positioning groove on its top, and the heating component (3) has a positioning hole at the position corresponding to the positioning groove. The bottom of the single crystal furnace (6) is fixed with a positioning column (7) that is compatible with the positioning hole and the positioning groove.

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