Modularized parallel half-bridge integrated assembly

Abstract

The utility model provides a modularized parallel half-bridge integrated assembly. The modularized parallel half-bridge integrated assembly comprises a device board, at least six parallel half-bridge subunits, a plurality of capacitors arranged above the device board and a plurality of inductors connected in parallel, the plurality of half-bridge subunits which are connected in parallel are arranged on the device board in rows; devices included in each half-bridge subunit are arranged on the device board in rows. Based on each half-bridge subunit, two capacitors are respectively connected in parallel between a direct-current positive electrode and a zero electrode and between the zero electrode and a direct-current negative electrode of the half-bridge subunit; one ends of the plurality of inductors connected in parallel are connected with the AC ends of the half-bridge subunits, and the other ends are AC output ends of the integrated assembly. According to the utility model, through the side-by-side layout of the half-bridge subunits, the parasitic inductance of the commutation loop and the parasitic inductance of the AC loop are ensured to be the same, and the inductance and the capacitance play the role of current equalization and realize the advantage of small voltage spike; and meanwhile, the compact and layered layout of the devices is realized through the up-down position arrangement relation of the devices, and the advantages of low parasitic parameter, high consistency and expansibility are also realized.

Description

Technical Field

[0001] This utility model belongs to the field of power semiconductor technology, specifically relating to a modular parallel half-bridge integrated component. Background Technology

[0002] Since the 1980s, with the rapid development of power electronics technology, various power electronic devices have been increasingly widely used in industry. As demand increases, power electronic devices are trending towards larger capacity and higher power density, leading to increased voltage and current ratings for switching devices. Taking the widely used insulated-gate bipolar transistor (IGBT) as an example, high-power IGBT modules ranging from 1700 to 6500V and 2000 to 3600A are now widely used. Press-fit IGBT devices, with their advantages of large capacity, compact structure, double-sided heat dissipation, and fault-tolerant short-circuit mode, have become a suitable high-voltage, high-power power electronic device for power systems.

[0003] IGBTs offer fast switching speeds, with turn-on and turn-off times on the order of microseconds. However, due to stray inductance in the circuit, IGBTs generate a very high current rise rate during switching. This excessively high current rise rate can lead to high voltage spikes during switching, which may damage the switching devices and increase switching losses and electromagnetic interference noise. Suppressing voltage spikes in half-bridge integrated components is a problem that needs to be solved. Utility Model Content

[0004] To overcome the shortcomings of the prior art, this utility model proposes a modular parallel half-bridge integrated component, including: a device board, at least six half-bridge sub-units, multiple capacitors and multiple inductors;

[0005] At least six of the half-bridge sub-units are connected in parallel, and the multiple half-bridge sub-units connected in parallel are arranged in a row on the device board; the devices included in each half-bridge sub-unit are arranged in a row on the device board.

[0006] Multiple capacitors are disposed above the device board, and multiple inductors are connected in parallel above the device board;

[0007] For each half-bridge sub-unit, two capacitors are connected in parallel between the DC positive terminal and the zero terminal, and between the zero terminal and the DC negative terminal of the half-bridge sub-unit, respectively; one end of the multiple inductors connected in parallel is connected to the AC terminal of the half-bridge sub-unit, and the other end is the AC output terminal of the integrated component.

[0008] Preferably, the half-bridge sub-unit includes a first IGBT device, a first clamping diode, a second IGBT device, a third IGBT device, a second clamping diode, and a fourth IGBT device arranged in a row on the device board; the first IGBT device, the second IGBT device, the third IGBT device, and the fourth IGBT device are connected in series, and the emitter of the third IGBT device is connected to the collector of the second IGBT device through the second clamping diode and the first clamping diode;

[0009] The collector of the first IGBT device is the DC positive terminal of the half-bridge sub-unit, the emitter of the fourth IGBT device is the DC negative terminal of the half-bridge sub-unit, and the connection between the emitter of the second IGBT device and the collector of the third IGBT device is the AC terminal of the half-bridge sub-unit.

[0010] Preferred options also include:

[0011] A DC positive terminal busbar is located above the device board and is used to connect to the DC positive terminal of all the half-bridge sub-units;

[0012] A DC negative terminal busbar is located above the device board and is used to connect to the DC negative terminal of all the half-bridge sub-units.

[0013] A zero-pole busbar is disposed above the device board and is used to connect to the anode of the first clamping diode and the cathode of the second clamping diode in all the half-bridge sub-units, respectively; a plurality of capacitors are respectively connected between the DC positive terminal busbar and the zero-pole busbar, and between the zero-pole busbar and the DC negative terminal busbar.

[0014] Preferred options also include:

[0015] An AC busbar is located above the device board and is used to collect the electrical signals of the first IGBT device, the first clamping diode, and the second IGBT device in each half-bridge sub-unit, as well as the AC electrical signals of the third IGBT device, the second clamping diode, and the fourth IGBT device in each half-bridge sub-unit.

[0016] Preferred options also include:

[0017] An inductor board is disposed directly above the center of the device board and above the DC positive terminal busbar, the DC negative terminal busbar and the zero terminal busbar, for mounting multiple inductors;

[0018] An AC output copper busbar is located directly below the inductor board and is used to connect to the ends of the multiple inductors connected in parallel away from the half-bridge subunit, serving as the AC output terminal of the integrated component.

[0019] Preferably, the DC positive terminal busbar and the DC negative terminal busbar are symmetrically arranged on both sides of the inductor plate, and the zero terminal busbar and the AC terminal busbar are symmetrically arranged on both sides of the inductor plate.

[0020] Preferably, the capacitors are symmetrically arranged on both sides of the parallel-connected inductors.

[0021] Preferably, it further includes: a pressure plate disposed between the device board and the DC positive terminal busbar, for pressing the half-bridge sub-unit.

[0022] Preferably, a heat dissipation substrate is provided at the bottom of the device board.

[0023] Preferably, one side of the device board is provided with a plurality of drive inserts that are connected to the half-bridge subunit.

[0024] Compared with the closest existing technology, the present invention has the following beneficial effects:

[0025] This utility model provides a modular parallel half-bridge integrated component, including: a device board, at least six half-bridge sub-units, multiple capacitors, and multiple inductors; the at least six half-bridge sub-units are connected in parallel, and the multiple half-bridge sub-units connected in parallel are arranged in a row on the device board; the components included in each half-bridge sub-unit are arranged in a row on the device board; multiple capacitors are disposed above the device board, and multiple inductors are connected in parallel above the device board; based on each half-bridge sub-unit, two capacitors are respectively connected in parallel between the DC positive terminal and the zero terminal, and between the zero terminal and the DC negative terminal of the half-bridge sub-unit; one end of the multiple inductors connected in parallel is connected to the AC terminal of the half-bridge sub-unit, and the other end is the AC output terminal of the integrated component. This invention ensures that the parasitic inductance of the converter circuit and the AC circuit are the same by arranging at least six half-bridge sub-units in parallel. Inductors and capacitors are connected to the half-bridge sub-units, which play a role in current balancing and minimizing voltage spikes. At the same time, the vertical arrangement of the half-bridge sub-units, inductors and capacitors achieves a compact and layered layout of the devices, and also has the advantages of low parasitic parameters, high consistency and scalability. Attached Figure Description

[0026] Figure 1 A schematic diagram of a modular parallel half-bridge integrated component structure provided by this utility model;

[0027] Figure 2 A schematic diagram showing the arrangement of the six half-bridge sub-units provided by this utility model on the device board;

[0028] Figure 3 for Figure 1 The right view;

[0029] Figure 4 for Figure 1 A bottom view;

[0030] Figure 5 A schematic diagram of the half-bridge sub-unit circuit structure provided by this utility model;

[0031] The components are as follows: 1. Component board; 2. Capacitor; 3. Inductor; 4. DC positive terminal busbar; 5. DC negative terminal busbar; 6. Zero terminal busbar; 7. AC terminal busbar; 8. Inductor board; 9. AC output copper busbar; 10. Pressure plate; 11. Heat sink substrate; 12. Surface mount nut; 13. Screw; 14. Inductor crimping input piece. Detailed Implementation

[0032] The specific embodiments of this utility model will be further described in detail below with reference to the accompanying drawings.

[0033] Example 1:

[0034] This utility model provides a modular parallel half-bridge integrated component, such as... Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, it includes: a device board 1, at least six half-bridge sub-units, multiple capacitors 2 and multiple inductors 3;

[0035] At least six half-bridge sub-units are connected in parallel, and the multiple half-bridge sub-units connected in parallel are arranged in a row on the device board 1; the devices included in each half-bridge sub-unit are arranged in a row on the device board 1.

[0036] Multiple capacitors 2 are arranged above the device board 1, and multiple inductors 3 are arranged in parallel above the device board 1; the multiple capacitors 2 are symmetrically arranged on both sides of the multiple inductors 3 connected in parallel.

[0037] Considering that IGBTs will generate a very high current rise rate during switching, this embodiment sets multiple capacitors 2 to suppress current and voltage overshoot;

[0038] Specifically, based on each half-bridge sub-unit, two capacitors 2 are connected in parallel between the DC positive terminal DC+ and the zero terminal N, and between the zero terminal N and the DC negative terminal DC- of the half-bridge sub-unit, respectively, to suppress current and voltage overshoot; one end of the multiple inductors 3 connected in parallel is connected to the AC terminal P1 of the half-bridge sub-unit, and the other end is the AC output terminal P2 of the integrated component.

[0039] This invention ensures that the parasitic inductance of the converter circuit and the AC circuit are the same by arranging at least six half-bridge sub-units in parallel. Inductor 3 and capacitor 2 are connected to the half-bridge sub-units to increase the current capacity of the integrated component. The parallel arrangement of the components achieves current balance. Inductor 3 and capacitor 2 play a role in current balance and small voltage spikes. At the same time, the vertical arrangement of the half-bridge sub-units, inductor 3 and capacitor 2 achieves a compact and layered layout of the device, and also has the advantages of low parasitic parameters, high consistency and scalability.

[0040] In this embodiment, two capacitors 2 and four inductors 4 connected in parallel are connected to a half-bridge sub-unit to form a half-bridge circuit; when the number of half-bridge sub-units is six, the total number of capacitors 2 is twelve and the total number of inductors 4 is twenty-four.

[0041] In addition to connecting six half-bridge sub-units in parallel, an even number of half-bridge sub-units can be connected in parallel based on the six parallel half-bridge sub-units as needed. Combined with the symmetrical arrangement of inductor 3 and capacitor 2, the integrated component is made completely symmetrical from left to right. As the number of half-bridge sub-units changes, the number of capacitor 2 and inductor 4 also changes, reflecting the high consistency and scalability of this application.

[0042] In this embodiment, capacitor 2 is a film capacitor CBB1000V104J, and inductor 3 is an RM6-4.7UH20A energy storage inductor.

[0043] A heat dissipation substrate 11 is provided at the bottom of the device board 1.

[0044] One side of the device board 1 has multiple drive inserts that are connected to the half-bridge sub-unit.

[0045] like Figure 1 As shown, the drive insert includes:

[0046] The first insert G1 is connected to the gate of the first IGBT device T1 of each half-bridge sub-unit;

[0047] The second insert E1 is connected to the emitter of the first IGBT device T1 of each half-bridge sub-unit;

[0048] The third insert G2 is connected to the gate of the second IGBT device T2 of each half-bridge sub-unit;

[0049] The fourth insert, E2, is connected to the emitter of the second IGBT device T2 in each half-bridge sub-unit;

[0050] The fifth insert G3 is connected to the gate of the third IGBT device T3 in each half-bridge sub-unit;

[0051] The sixth insert, E3, is connected to the emitter of the third IGBT device T3 in each half-bridge sub-unit;

[0052] The seventh insert G4 is connected to the gate of the fourth IGBT device T4 in each half-bridge sub-unit;

[0053] The eighth insert, E4, is connected to the emitter of the fourth IGBT device, T4, in each half-bridge sub-unit.

[0054] like Figure 5 As shown, the half-bridge sub-unit includes a first IGBT device T1, a first clamping diode D5, a second IGBT device T2, a third IGBT device T3, a second clamping diode D6, and a fourth IGBT device T4 arranged in a row on the device board 1; the first IGBT device T1, the second IGBT device T2, the third IGBT device T3, and the fourth IGBT device T4 are connected in series, and the emitter of the third IGBT device T3 is connected to the collector of the second IGBT device T2 through the second clamping diode D6 and the first clamping diode D5;

[0055] The collector of the first IGBT device T1 is the DC positive terminal DC+ of the half-bridge sub-unit, the emitter of the fourth IGBT device T4 is the DC negative terminal DC- of the half-bridge sub-unit, and the connection between the emitter of the second IGBT device T2 and the collector of the third IGBT device T3 is the AC terminal P1 of the half-bridge sub-unit.

[0056] Specifically, after the emitter of the second IGBT device T2 is connected to the collector of the third IGBT device T3, it is connected to one pin of all the inductors 3 on the inductor board 8 through the surface mount nut 12 to output current. The purpose is to ensure that the output current achieves the balanced characteristics of the output current through the distributed commutation technology of the inductors 3.

[0057] Specifically, copper busbars are used to connect each component, which facilitates heat dissipation, greatly improves the lifespan of the integrated components, and significantly enhances their reliability.

[0058] The upper half-bridge consists of the first IGBT device T1, the first clamping diode D5, and the second IGBT device T2, while the lower half-bridge consists of the third IGBT device T3, the second clamping diode D6, and the fourth IGBT device T4. The upper and lower half-bridge structures are completely symmetrical, which can minimize stray inductance in the lines.

[0059] The first IGBT device T1, the second IGBT device T2, the third IGBT device T3, and the fourth IGBT device T4 all include an IGBT transistor and a diode connected in parallel to the IGBT transistor via a copper busbar, such as Figure 4 Diodes D1 to D4 in the circuit.

[0060] In this embodiment, a ceramic pad is provided between each device in the half-bridge sub-unit and the device board 1.

[0061] This embodiment also includes:

[0062] The DC positive terminal busbar 4 is located above the device board 1 and is used to connect to the DC positive terminal DC+ of all half-bridge sub-units, presenting a direct connection structure.

[0063] The DC negative terminal busbar 5 is located above the device board 1 and is used to connect to the DC negative terminal of all half-bridge sub-units, presenting a direct connection structure.

[0064] The zero-pole busbar 6 is located above the device board 1 and is used to connect to the anode of the first clamping diode and the cathode of the second clamping diode in all half-bridge sub-units, respectively; multiple capacitors 2 are connected between the DC positive terminal busbar 4 and the zero-pole busbar 6, and between the zero-pole busbar 6 and the DC negative terminal busbar 5, respectively.

[0065] AC busbar 7 is located above device board 1 and is used to collect the electrical signals of the first IGBT device, the first clamping diode and the second IGBT device in each half-bridge sub-unit, as well as the AC electrical signals of the third IGBT device, the second clamping diode and the fourth IGBT device in each half-bridge sub-unit.

[0066] Inductor board 8 is located directly above the center of device board 1 and is higher than DC positive terminal busbar 4, DC negative terminal busbar 5 and zero terminal busbar 6, and is used to install multiple inductors 3;

[0067] The AC output copper busbar 9 is located directly below the inductor board 8 and is used to connect to the end of the multiple inductors 3 connected in parallel away from the half-bridge subunit, serving as the AC output terminal P2 of the integrated component.

[0068] In this embodiment, the inductor board 8 is a PCB board, and multiple inductors 4 are as follows: Figure 1 The components are connected in a matrix form on the inductor board 8;

[0069] Specifically, multiple inductors 4 are connected to the inductor board 8 via inductor press-in input piece 14.

[0070] In this embodiment, the DC positive terminal busbar 4, the DC negative terminal busbar 5, the zero terminal busbar 6 and the AC terminal busbar 7 are located on the same layer and are arranged as a busbar layer above the device board 1. The inductor board 8 is arranged above the busbar layer.

[0071] The above-mentioned busbars are connected to the components and capacitors 2 of the half-bridge sub-unit using surface-mount nuts 12 of different models and screws 13 that match the surface-mount nuts 12. The connection structure is stable and the installation is flexible.

[0072] By setting up the busbar layer, each IGBT device is tightly integrated with capacitor 2, resulting in a smaller parasitic inductance in the commutation circuit, which in turn reduces voltage overshoot, increases switching speed, and balances current.

[0073] In this embodiment, the pressure plate 10 is disposed between the device board 1 and the DC positive terminal busbar 4, and is used to press the half-bridge sub-unit, and also serves as the mounting base for the busbar layer. The pressure plate 10 and the device board 1 are connected and fixed by copper studs.

[0074] DC positive busbar 4 and DC negative busbar 5 are symmetrically arranged on both sides of inductor plate 8, and two zero busbars 6 and multiple AC busbars 7 are symmetrically arranged on both sides of inductor plate 8.

[0075] In this embodiment, the anodes of the first clamping diodes D5 of each half-bridge sub-unit are connected in parallel to form a positive zero pole, and the cathodes of the second clamping diodes D5 of each half-bridge sub-unit are connected in parallel to form a negative zero pole; correspondingly, the two zero pole busbars 6 include a positive zero pole busbar corresponding to the above-mentioned positive zero pole and a negative zero pole busbar corresponding to the above-mentioned negative zero pole. The positive zero pole busbar and the negative zero pole busbar are symmetrically arranged on both sides of the inductor board 8 to further ensure the symmetrical structure of the integrated component.

[0076] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of this utility model and not to limit its protection scope. Although the utility model has been described in detail with reference to the above embodiments, those skilled in the art should understand that after reading this utility model, they can still make various changes, modifications or equivalent substitutions to the specific implementation methods of the application. However, these changes, modifications or equivalent substitutions are all within the protection scope of the claims of this utility model.

Claims

1. A modular parallel half-bridge integrated component, characterized in that, include: The device board consists of at least six half-bridge sub-units, multiple capacitors, and multiple inductors. At least six of the half-bridge sub-units are connected in parallel, and the multiple half-bridge sub-units connected in parallel are arranged in a row on the device board; the devices included in each half-bridge sub-unit are arranged in a row on the device board. Multiple capacitors are disposed above the device board, and multiple inductors are connected in parallel above the device board; For each half-bridge sub-unit, two capacitors are connected in parallel between the DC positive terminal and the zero terminal, and between the zero terminal and the DC negative terminal of the half-bridge sub-unit, respectively; one end of the multiple inductors connected in parallel is connected to the AC terminal of the half-bridge sub-unit, and the other end is the AC output terminal of the integrated component.

2. The modular parallel half-bridge integrated component as described in claim 1, characterized in that, The half-bridge sub-unit includes a first IGBT device, a first clamping diode, a second IGBT device, a third IGBT device, a second clamping diode, and a fourth IGBT device arranged in a row on the device board; the first IGBT device, the second IGBT device, the third IGBT device, and the fourth IGBT device are connected in series, and the emitter of the third IGBT device is connected to the collector of the second IGBT device through the second clamping diode and the first clamping diode; The collector of the first IGBT device is the DC positive terminal of the half-bridge sub-unit, the emitter of the fourth IGBT device is the DC negative terminal of the half-bridge sub-unit, and the connection between the emitter of the second IGBT device and the collector of the third IGBT device is the AC terminal of the half-bridge sub-unit.

3. The modular parallel half-bridge integrated component as described in claim 2, characterized in that, Also includes: A DC positive terminal busbar is located above the device board and is used to connect to the DC positive terminal of all the half-bridge sub-units; A DC negative terminal busbar is located above the device board and is used to connect to the DC negative terminal of all the half-bridge sub-units. A zero-pole busbar is disposed above the device board and is used to connect to the anode of the first clamping diode and the cathode of the second clamping diode in all the half-bridge sub-units, respectively. The capacitors are respectively connected between the DC positive terminal busbar and the zero terminal busbar, and between the zero terminal busbar and the DC negative terminal busbar.

4. The modular parallel half-bridge integrated component as described in claim 3, characterized in that, Also includes: An AC busbar is located above the device board and is used to collect the electrical signals of the first IGBT device, the first clamping diode, and the second IGBT device in each half-bridge sub-unit, as well as the AC electrical signals of the third IGBT device, the second clamping diode, and the fourth IGBT device in each half-bridge sub-unit.

5. The modular parallel half-bridge integrated component as described in claim 4, characterized in that, Also includes: An inductor board is disposed directly above the center of the device board and above the DC positive terminal busbar, the DC negative terminal busbar and the zero terminal busbar, for mounting multiple inductors; An AC output copper busbar is located directly below the inductor board and is used to connect to the ends of the multiple inductors connected in parallel away from the half-bridge subunit, serving as the AC output terminal of the integrated component.

6. The modular parallel half-bridge integrated component as described in claim 5, characterized in that, The DC positive terminal busbar and the DC negative terminal busbar are symmetrically arranged on both sides of the inductor board, and the zero terminal busbar and the AC terminal busbar are symmetrically arranged on both sides of the inductor board.

7. The modular parallel half-bridge integrated component as described in claim 1, characterized in that, The capacitors are symmetrically arranged on both sides of the inductors connected in parallel.

8. The modular parallel half-bridge integrated component as described in claim 1, characterized in that, Also includes: A pressure plate is disposed between the device board and the DC positive terminal busbar for pressing the half-bridge sub-unit.

9. The modular parallel half-bridge integrated component as described in claim 1, characterized in that, A heat dissipation substrate is provided at the bottom of the device board.

10. The modular parallel half-bridge integrated component as described in claim 1, characterized in that, The device board has multiple drive inserts on one side that are connected to the half-bridge subunit.

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