Plasma tail gas treatment equipment
By compactly arranging the power supply cabinet, electrical control cabinet, reaction chamber, water tank, and spray chamber, the plasma exhaust gas treatment equipment solves the problems of excessive equipment size and excessive processing capacity, achieving equipment miniaturization and cost reduction.
Patent Information
- Application Number
- CN202423256142.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-29
- Publication Date
- 2026-02-27
- Estimated Expiration
- 2034-12-29
AI Technical Summary
Existing exhaust gas treatment equipment is too large for the semiconductor industry, has excessive processing capacity, cannot meet the needs of small-scale sites, and is also too expensive.
A plasma exhaust gas treatment device was designed, comprising a power cabinet, an electrical control cabinet, a reaction chamber, a water tank, and a spray chamber. Through a compact component arrangement and a water tank spray system, the exhaust gas treatment capacity and effect are guaranteed, while reducing the size of the equipment and lowering material costs.
This approach achieves the goal of reducing equipment size, lowering material costs, and improving economic efficiency while ensuring effective exhaust gas treatment.
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Figure CN223945330U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to tail gas treatment technical field, specifically is a kind of plasma tail gas treatment equipment. BACKGROUND
[0002] Environmental protection has become a hot topic, and governments around the world are sparing no effort to protect the environment. In order to keep up with the trend of the times and achieve sustainable development, the control of pollution sources in various industries is becoming increasingly stringent, especially the emission control of industrial waste gas.
[0003] In the semiconductor industry, a variety of special gases, large amounts of acids, bases and other chemicals, as well as organic solvents and volatile liquids are required. These industrial raw materials generate waste gas in the semiconductor manufacturing process. Currently, plasma combustion is one of the main methods for waste gas treatment. This equipment mainly uses a plasma head to ignite a plasma flame to treat industrial raw materials into tail gas that meets emission standards and is discharged through the plant end.
[0004] In the semiconductor industry, the use of special gases in some processes is relatively small, and the site range is small, requiring a small size and low processing capacity of the tail gas treatment equipment. The existing equipment is too large in size and has excessive processing capacity. SUMMARY
[0005] To solve the above technical problems, the utility model provides a kind of plasma tail gas treatment equipment, it can guarantee tail gas processing capacity and processing effect while reducing size, reduce material cost, improve efficiency.
[0006] The technical scheme is as follows: a kind of plasma tail gas treatment equipment, characterized in that it comprises power cabinet, electric control cabinet, reaction cavity, water tank and spray cavity, the reaction cavity includes upper reaction cavity, lower reaction cavity, reaction cavity insertion tube, the upper reaction cavity is provided with outer water cooling layer and inner gas inlet purging mechanism, the reaction cavity insertion tube is arranged in the lower reaction cavity, a sandwich is arranged between the reaction cavity insertion tube and the lower reaction cavity, a reaction cavity spray pipe is arranged in the sandwich, the bottom of the outer shell is connected with the gas inlet of the water tank, the lower part of the reaction cavity insertion tube passes through the gas inlet of the water tank and is inserted into the water tank, the gas outlet of the water tank is connected with the bottom of the spray cavity, water tank spray pipes are arranged at the gas inlet and gas outlet of the water tank, and a tail spray pipe is arranged in the spray cavity;The gas inlet and gas outlet of the water tank are arranged on the top of the water tank, and the power cabinet and the electric control cabinet are stacked and arranged on one side of the water tank and the reaction cavity.
[0007] Further, the inner air inlet purging mechanism comprises a purging air inlet pipe and a hollow annular seat fixed to the inner wall of the upper reaction chamber, the hollow annular seat is composed of an upper ring plate, a lower ring plate and a side ring plate, the side ring plate is connected with the lower ring plate, and a plurality of air outlet holes are arranged at the joint of the side ring plate and the lower ring plate, and the purging air inlet pipe penetrates through the outer water cooling layer and the side wall of the upper reaction chamber and is inserted into the hollow annular seat;
[0008] The water tank is provided with a liquid level sensor and a temperature sensor, and the water tank spray pipe is connected with a circulating pump through a circulating water pipe with a filter box;
[0009] The spray chamber comprises a first spray chamber layer, a second spray chamber layer, a third spray chamber layer and a fourth spray chamber layer from bottom to top, the tail spray pipe is arranged in the first spray chamber layer and the second spray chamber layer, the third spray chamber layer is provided with an air inlet ball valve and a pressure sensor, and the fourth spray chamber layer is provided with a temperature sensor and a sampling port and is provided with a tail gas outlet at the top;
[0010] The top of the reaction chamber is connected with an air inlet chamber, the air inlet chamber is filled with a refractory soil layer and is connected with a plurality of air inlet pipes;
[0011] The reaction chamber spray pipe comprises two semicircular spray pipes.
[0012] After the utility model is adopted, the components are arranged compactly, the water tank and the spray chamber are used for reasonably processing the tail gas, the water tank and the spray cylinder are reduced in size under the condition of ensuring suitable processing capacity, the material cost is greatly reduced, and the economic benefit is improved. BRIEF DESCRIPTION OF DRAWINGS
[0013] Fig. 1 It is a structural schematic view of the utility model;
[0014] Fig. 2 It is a structural schematic view of the reaction chamber;
[0015] Fig. 3 It is a structural schematic view of the water tank;
[0016] Fig. 4 It is a structural schematic view of the spray chamber. PREFERRED EMBODIMENT
[0017] As shown in Figs. 1 to 4 A kind of plasma tail gas processing equipment, it includes power cabinet 5, electric control cabinet 6, air inlet chamber 1, reaction chamber 2, water tank 3 and spray chamber 4, the top of reaction chamber 2 is connected with air inlet chamber 1, air inlet chamber 1 is filled with refractory soil layer and is connected with multiple air inlet pipes 11, so that smaller air inlet pipe 11 can be used.
[0018] The reaction cavity 2 comprises an upper reaction cavity 21, a lower reaction cavity 22 and a reaction cavity insertion pipe 23. The upper reaction cavity 21 is provided with an outer water cooling layer 211 and an inner gas inlet and purging mechanism. The inner gas inlet and purging mechanism comprises a purging gas inlet pipe 213 and a hollow annular seat 212. The hollow annular seat 212 is fixed to the inner wall of the upper reaction cavity 21. The hollow annular seat 212 is composed of an upper ring plate, a lower ring plate and a side ring plate. The side ring plate and the lower ring plate are connected and provided with a plurality of spaced gas outlet holes. The purging gas inlet pipe 213 penetrates the outer water cooling layer 211 and the side wall of the upper reaction cavity 21 and is inserted into the hollow annular seat 212. Purging gas is introduced into the hollow annular seat 212 through the purging gas inlet pipe 213 and is sprayed downward from the gas outlet holes, thereby achieving the purging effect.
[0019] The reaction cavity insertion pipe 23 is arranged in the lower reaction cavity 22. A cladding layer is arranged between the reaction cavity insertion pipe 23 and the lower reaction cavity 22. A reaction cavity spray pipe 221 is arranged in the cladding layer. The reaction cavity spray pipe 221 comprises two half-annular spray pipes. The bottom of the outer shell is connected with the gas inlet of the water tank 3. The lower part of the reaction cavity insertion pipe 23 penetrates the gas inlet of the water tank 3 and is inserted into the water tank 3. The gas outlet of the water tank 3 is connected with the bottom of the spray cavity 4. The water tank spray pipes 31 are arranged at the gas inlet and the gas outlet of the water tank 3. The gas inlet and the gas outlet of the water tank 3 are arranged on the two sides of the top of the water tank 3. The water tank 3 is provided with a liquid level sensor 33 and a temperature sensor 34. The water tank spray pipes 31 are connected with the circulating pump 32 through the circulating water pipes provided with filter boxes 35.
[0020] The spray cavity 4 comprises a spray cavity first layer 41, a spray cavity second layer 42, a spray cavity third layer 43 and a spray cavity fourth layer 44 from bottom to top. The tail spray pipe 441 is arranged in the spray cavity first layer 41 and the spray cavity second layer 42. The spray cavity third layer 43 is provided with a gas inlet ball valve 431 and a pressure sensor 432. The spray cavity fourth layer 44 is provided with a temperature sensor 442 and a sampling port 441 and the top is a tail gas outlet.
[0021] The power cabinet 5 and the electric control cabinet 6 are arranged in a stacked manner and are arranged on one side of the water tank 3 and the reaction cavity 2. The structure is compact and the occupied space is reduced. The power cabinet 5 is provided with a plasma power supply 51. The electric control cabinet 6 is provided with an electric control board 61.
[0022] In the working state, the tail gas enters the gas inlet cavity 1 from the gas inlet pipe 11. The plasma flame generated by the plasma head burns in the reaction cavity 2. The waste generated after the combustion enters the water tank 3. The waste gas is separated into harmless waste gas and solid waste by the spray pipes 31 in the water tank 3. The solid waste remains in the water tank 3. The harmless waste gas enters the spray cavity 4 and is discharged to the plant end after the processes of spraying, sampling detection and temperature measurement.
Claims
1. A plasma exhaust processing apparatus, characterized by, It includes power cabinet, electric control cabinet, reaction cavity, water tank and spraying cavity, the reaction cavity includes upper reaction cavity, lower reaction cavity, reaction cavity insertion tube, the upper reaction cavity is provided with outer water cooling layer and inner air inlet purging mechanism, the reaction cavity insertion tube is arranged in the lower reaction cavity, a clamping layer is arranged between the reaction cavity insertion tube and the lower reaction cavity, a reaction cavity spraying pipe is arranged in the clamping layer, the bottom of the outer shell is connected with the air inlet of the water tank, the lower part of the reaction cavity insertion tube passes through the air inlet of the water tank and is inserted into the water tank, the air outlet of the water tank is connected with the bottom of the spraying cavity, water tank spraying pipes are arranged at the air inlet and the air outlet of the water tank, tail spraying pipes are arranged in the spraying cavity; the air inlet and the air outlet of the water tank are arranged on the two sides of the top of the water tank, the power cabinet and the electric control cabinet are arranged in a stack and are arranged on one side of the water tank and the reaction cavity.
2. A plasma exhaust processing apparatus as defined in claim 1, wherein, The inner air inlet purging mechanism includes purging air inlet pipe and hollow annular seat, the hollow annular seat is fixed to the inner wall of the upper reaction cavity, the hollow annular seat is composed of upper ring plate, lower ring plate and side ring plate, the connecting part of the side ring plate and the lower ring plate is provided with air outlet holes arranged at intervals, the purging air inlet pipe penetrates the outer water cooling layer and the side wall of the upper reaction cavity and is inserted into the hollow annular seat.
3. The apparatus of claim 1, wherein the apparatus further comprises a gas source coupled to the gas inlet of the plasma chamber. Liquid level sensor and temperature sensor are arranged in the water tank, the water tank spraying pipes are connected with the circulating pump through circulating water pipes with filter boxes.
4. The apparatus of claim 1, wherein, The spraying cavity includes spraying cavity layer one, spraying cavity layer two, spraying cavity layer three and spraying cavity layer four from bottom to top, the tail spraying pipes are arranged in the spraying cavity layer one and the spraying cavity layer two, the spraying cavity layer three is provided with air inlet ball valve and pressure sensor, the spraying cavity layer four is provided with temperature sensor and sampling port and the top is tail gas outlet.
5. The apparatus of claim 1, wherein, The top of the reaction cavity is connected with air inlet cavity, the air inlet cavity is filled with fireclay layer and is connected with multiple air inlet pipes.
6. The apparatus of claim 1, wherein, The reaction cavity spraying pipe includes two half annular spraying pipes.