Gas spraying device and semiconductor equipment

Abstract

The utility model relates to a gas spraying device and semiconductor equipment. The gas spraying device comprises a gas spraying head, a driving adjusting shaft and a driven adjusting shaft core. The gas nozzle is located in the process chamber, and one end of the gas nozzle is provided with a gas outlet; the driving adjusting shaft is positioned outside the process chamber and extends along the axial direction of the gas nozzle; a first magnetic structure is arranged at one end, close to the process chamber, of the driving adjusting shaft; the driven adjusting shaft core is located in the gas nozzle and extends in the axial direction of the gas nozzle. A second magnetic structure is arranged at one end, close to the driving adjusting shaft, of the driven adjusting shaft core; the driven adjusting shaft core and the driving adjusting shaft are in magnetic coupling transmission. When the driven adjusting shaft core rotates along with the driving adjusting shaft, the driven adjusting shaft core telescopically moves in the axial direction of the gas nozzle so as to adjust the cross sectional area of a gas flow channel of the gas nozzle, and therefore the gas flow of the gas nozzle is adjusted. According to the invention, on the premise that the sealing performance of the process chamber is ensured, rapid adjustment of the gas flow is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a gas spraying device and a semiconductor equipment. BACKGROUND

[0002] A chemical vapor deposition (CVD) equipment is a thermal equipment for depositing a high-purity dense and high-performance coating film on a wafer surface by using a chemical vapor deposition process. A nozzle structure is annularly arranged in a process chamber of the chemical vapor deposition equipment, and is used for introducing a process gas into the process chamber. With the chemical vapor deposition process, the nozzle structure is prone to corrosion or clogging, so that the gas flow of each nozzle structure is uneven, thereby causing uneven deposition of the film on the wafer surface and reducing the yield of wafer products.

[0003] In the related art, the above problems are usually solved by opening the cavity for maintenance or replacing the nozzle structure with a proper aperture. However, this method needs to stop the equipment and perform the opening cavity operation, and needs to be performed according to the preventive maintenance (PM) loop process, which takes a long time and seriously affects the production efficiency. Moreover, the process chamber needs to be opened during the maintenance process, which is difficult to ensure the sealing of the process chamber and is prone to wafer contamination, thereby affecting the product yield. Inventive Content

[0004] Therefore, the embodiments of the present application provide a gas spraying device and a semiconductor equipment to realize rapid adjustment of the gas flow under the premise of ensuring the sealing of the process chamber, thereby facilitating the uniformity of the film deposition on the wafer surface.

[0005] To achieve the above object, in one aspect, some embodiments of the present application provide a gas spraying device. The gas spraying device comprises a gas nozzle, a driving adjustment shaft and a driven adjustment shaft core. The gas nozzle is located inside the process chamber, and an end of the gas nozzle away from the inner wall of the process chamber has a gas outlet. The driving adjustment shaft is located outside the process chamber and extends along the axial direction of the gas nozzle. An end of the driving adjustment shaft close to the process chamber has a first magnetic structure. The driven adjustment shaft core is located inside the gas nozzle and extends along the axial direction of the gas nozzle. An end of the driven adjustment shaft core close to the driving adjustment shaft has a second magnetic structure. The driven adjustment shaft core and the driving adjustment shaft are magnetically coupled and transmitted. When the driven adjustment shaft core rotates with the driving adjustment shaft, the driven adjustment shaft core moves along the axial direction of the gas nozzle to adjust the cross-sectional area of the gas flow passage of the gas nozzle.

[0006] In some embodiments, there is no direct contact between the driving adjustment shaft and the driven adjustment shaft core, and they are isolated from each other by the process chamber wall, which is conducive to ensuring the sealing of the process chamber.

[0007] In some embodiments, the gas showerhead comprises a straight cylinder cavity and a conical cavity; the straight cylinder cavity is connected to the inner wall of the process chamber; the conical cavity is connected to the straight cylinder cavity; the conical cavity has a gas outlet at one end away from the straight cylinder cavity for spraying process gas.

[0008] In some embodiments, when the driven adjustment shaft core moves along the axial direction of the gas showerhead, the cross-sectional area of the gas flow channel of the gas showerhead is negatively correlated with the degree of overlap between the driven adjustment shaft core and the conical cavity; by combining the driven adjustment shaft core with the gas showerhead, the cross-sectional area of the gas flow channel of the gas showerhead is adjusted to achieve adjustable gas flow of the gas showerhead.

[0009] In some embodiments, the gas spraying device further comprises a gas chamber; the gas chamber is located between the gas showerhead and the inner wall of the process chamber for introducing the process gas; wherein the process gas is uniformly distributed in the gas chamber; the gas showerhead is in communication with the gas chamber.

[0010] In some embodiments, the gas spraying device further comprises a guide rail groove; the guide rail groove is located in the gas showerhead and extends along the axial direction of the gas showerhead; wherein the driven adjustment shaft core is movably connected to the guide rail groove; when the driven adjustment shaft core follows the rotation of the driving adjustment shaft, the driven adjustment shaft core can retract into the guide rail groove in the direction away from the gas outlet and extend out of the guide rail groove in the direction close to the gas outlet.

[0011] In some embodiments, the gas spraying device further comprises a limiting groove; the limiting groove is located on the outer wall of the process chamber; the limiting groove is directly opposite to the guide rail groove in the axial direction of the gas showerhead; the limiting groove is used to limit the position of the driving adjustment shaft so that the axis of the driving adjustment shaft coincides with the axis of the driven adjustment shaft core.

[0012] In some embodiments, the first magnetic structure and the second magnetic structure have opposite electrode polarities when they are directly opposite to each other in the direction parallel to the axis of the gas showerhead.

[0013] In some embodiments, the number of gas showerheads is multiple; each gas showerhead is arranged around the top of the inner wall of the process chamber; and each gas showerhead is internally provided with the driven adjustment shaft core.

[0014] In another aspect, the present application also provides, according to some embodiments, a semiconductor device; the semiconductor device comprises a process chamber and the gas spraying device as described in any one of the preceding embodiments; the gas spraying device is located on the process chamber.

[0015] To sum up, the unexpected technical effects produced by the embodiments of the present application at least include:

[0016] In the embodiments of the present application, the driven adjusting shaft core is arranged inside the gas nozzle, the driving adjusting shaft located outside the process chamber is magnetically coupled with the driven adjusting shaft core to transmit torque by magnetic force, so that the driven adjusting shaft core can rotate following the driving adjusting shaft without direct contact, and move along the axial direction of the gas nozzle to adjust the cross-sectional area of the gas flow channel of the gas nozzle, thereby realizing the adjustment of the gas flow rate of the gas nozzle. In this way, since the driven adjusting shaft core is located inside the process chamber and the driving adjusting shaft is located outside the process chamber, they are isolated by the process chamber wall and magnetically coupled without direct contact, so that the gas spraying device provided by the embodiments of the present application can meet the requirement of the sealing of the process chamber when adjusting the gas flow rate, which not only maintains the closed environment required in the process, but also effectively prevents the wafer from being contaminated and effectively improves the yield of the process product. In addition, by combining the driven adjusting shaft core with the gas nozzle, the cross-sectional area of the gas flow channel of the gas nozzle can be adjusted, and the spraying of process gas with different flow rates can be realized without opening the chamber and replacing the gas nozzle, which not only improves the production efficiency, but also improves the uniformity of the gas spraying in the process chamber, so as to improve the uniformity of the film deposition on the wafer surface and improve the yield of the wafer product.

[0017] The details of one or more embodiments of the present application are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the present application will be apparent from the description and drawings, and from the claims. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0019] Figure 1 The structural schematic diagram of the gas spraying device provided in some embodiments;

[0020] Figure 2A schematic view of the positional relationship between the driven adjustment shaft core and the conical cavity of the gas showerhead in some embodiments;

[0021] Figure 3 A schematic view of the positional relationship between the driven adjustment shaft core and the conical cavity of the gas showerhead in some embodiments;

[0022] Figure 4 A schematic view of the positional relationship between the driven adjustment shaft core and the conical cavity of the gas showerhead in some embodiments;

[0023] Figure 5 A schematic view of the distribution position of the gas spraying device in the process chamber of the semiconductor equipment in some embodiments.

[0024] BRIEF DESCRIPTION OF DRAWINGS

[0025] 1-gas showerhead, P-gas outlet, 11-straight cylinder cavity, 12-conical cavity, 2-primary adjustment shaft, 3-driven adjustment shaft core, 41-first magnetic structure, 42-second magnetic structure, 5-process chamber wall, 6-gas chamber, 7-guide rail groove, 8-limiting groove, A-process chamber, B-gas spraying device. DETAILED DESCRIPTION

[0026] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the accompanying drawings. The preferred embodiments of the present application are shown in the drawings. However, the present application can be realized in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided so that the disclosure of the present application is more thorough and comprehensive.

[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0028] It will be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or connected to the other element or layer or intervening elements or layers can be present. In addition, it will be understood that when a term is used in the singular, plural forms can be used in the description of this disclosure unless otherwise expressly specified herein. Also, it will be understood that the term "includes" or "comprising" when used in this disclosure specifies the presence of stated features, integers, steps, operations, elements, or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof.

[0029] As used herein, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0030] Embodiments of the application are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the application. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Embodiments of the application should not be construed as limited to the particular shapes of the regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the application.

[0031] The embodiments of the present application provide a gas spraying device and a semiconductor equipment, so as to realize rapid adjustment of gas flow under the premise of ensuring the sealing of a process chamber, thereby facilitating to improve the deposition uniformity of a wafer surface film.

[0032] In some embodiments, refer to Figure 1The gas spraying device comprises a gas spraying head 1, a driving adjusting shaft 2 and a driven adjusting shaft core 3. The gas spraying head 1 is located inside the process chamber, and has a gas outlet P at an end thereof away from the inner wall of the process chamber. The driving adjusting shaft 2 is located outside the process chamber and extends along the axial direction of the gas spraying head 1. An end of the driving adjusting shaft 2 close to the process chamber has a first magnetic structure 41. The driven adjusting shaft core 3 is located inside the gas spraying head 1 and extends along the axial direction of the gas spraying head 1. An end of the driven adjusting shaft core 3 close to the driving adjusting shaft 2 has a second magnetic structure 42. The driven adjusting shaft core 3 and the driving adjusting shaft 2 are magnetically coupled. When the driven adjusting shaft core 3 rotates with the driving adjusting shaft 2, the driven adjusting shaft core 3 moves along the axial direction of the gas spraying head 1 to adjust the cross-sectional area of the gas flow channel of the gas spraying head 1.

[0033] For example, the process chamber includes, but is not limited to, a reaction chamber of a chemical vapor deposition (CVD) device. For example, the process chamber can be a reaction chamber of a high-density plasma chemical vapor deposition (HDP-CVD) device.

[0034] For example, the axial center line of the gas spraying head 1 is in the same radial direction as the gas chamber 6.

[0035] For example, the axial center line of the gas spraying head 1, the axial center line of the driving adjusting shaft 2 and the axial center line of the driven adjusting shaft core 3 coincide.

[0036] For example, the material of the driven adjusting shaft core 3 includes, but is not limited to, inorganic non-metallic materials. For example, the material of the driven adjusting shaft core 3 can be ceramic and the like.

[0037] For example, the shape of the driving adjusting shaft 2 includes, but is not limited to, a cuboid or a cylinder and the like.

[0038] For example, the shape of the driven adjusting shaft core 3 includes, but is not limited to, a cuboid or a cylinder and the like.

[0039] For example, the material of the first magnetic structure 41 includes, but is not limited to, permanent magnetic materials. For example, the material of the first magnetic structure 41 can be an aluminum-nickel-cobalt-based permanent magnetic alloy, an iron-chromium-cobalt-based permanent magnetic alloy, a permanent magnetic ferrite, a rare earth permanent magnetic material or a composite permanent magnetic material and the like.

[0040] For example, the material of the second magnetic structure 42 includes, but is not limited to, permanent magnetic materials. For example, the material of the second magnetic structure 42 can be an aluminum-nickel-cobalt-based permanent magnetic alloy, an iron-chromium-cobalt-based permanent magnetic alloy, a permanent magnetic ferrite, a rare earth permanent magnetic material or a composite permanent magnetic material and the like.

[0041] In some embodiments, the first magnetic structure 41 and the second magnetic structure 42 are opposite to each other in the direction parallel to the axial line of the gas injection head 1, and the polarities of the electrodes of the first magnetic structure 41 and the second magnetic structure 42 are opposite to each other.

[0042] In some examples, please continue to refer to Figure 1 The first magnetic structure 41 includes a first pole (for example, S pole) and a second pole (for example, N pole); the second magnetic structure 42 includes a first pole (for example, S pole) and a second pole (for example, N pole); the first pole (for example, S pole) of the first magnetic structure 41 is opposite to the second pole (for example, N pole) of the second magnetic structure 42 in the direction parallel to the axial line of the gas injection head 1, and the second pole (for example, N pole) of the first magnetic structure 41 is opposite to the first pole (for example, S pole) of the second magnetic structure 42 in the direction parallel to the axial line of the gas injection head 1.

[0043] It should be noted that, according to the above examples, the electrodes of the first magnetic structure 41 and the electrodes of the second magnetic structure 42 are opposite to each other, so that the driven adjusting shaft core 3 and the driving adjusting shaft 2 can be magnetically coupled and driven, so as to realize torque transmission between the driving adjusting shaft 2 and the driven adjusting shaft core 3, so that the driven adjusting shaft core 3 can rotate following the driving adjusting shaft 2.

[0044] In the embodiments of the present application, the driven adjusting shaft core 3 is arranged in the interior of the gas injection head 1, the driving adjusting shaft 2 located outside the process chamber and the driven adjusting shaft core 3 are magnetically coupled and driven, so that the driven adjusting shaft core 3 can transmit torque by magnetic force without direct contact with the driving adjusting shaft 2, rotate following the driving adjusting shaft 2, and move along the axial direction of the gas injection head 1 at the same time, so as to adjust the cross-sectional area of the gas flow passage of the gas injection head 1, thereby realizing the adjustment of the gas flow rate of the gas injection head 1; in this way, since the driven adjusting shaft core 3 is located in the process chamber and the driving adjusting shaft 2 is located outside the process chamber, they are isolated from each other by the process chamber wall 5 and magnetically coupled and driven without direct contact, so that the gas injection device provided by the embodiments of the present application can realize the adjustment of the gas flow rate without opening the process chamber, which can meet the requirement for the sealing performance of the process chamber in the process, not only maintains the closed environment required in the process, but also effectively prevents the contamination of the wafer and effectively improves the yield of the process product; and by combining the driven adjusting shaft core 3 with the gas injection head 1, the cross-sectional area of the gas flow passage of the gas injection head 1 can be adjusted, so that the spraying of process gas with different flow rates can be realized without stopping the machine and opening the chamber to replace the gas injection head 1, which not only improves the production efficiency, but also improves the uniformity of the gas spraying in the process chamber, so as to improve the uniformity of the film deposition on the wafer surface and improve the yield of the wafer product.

[0045] In some embodiments, please continue to refer to Figure 1There is no direct contact between the driving adjustment shaft 2 and the driven adjustment shaft core 3, and they are isolated from each other by the process chamber wall 5.

[0046] In the embodiments of the present application, the driving adjustment shaft 2 and the driven adjustment shaft core 3 are respectively located on the two sides of the process chamber wall 5, so that the first magnetic structure 41 and the second magnetic structure 42 are magnetically coupled to replace the mechanical connection with magnetic connection, so that the torque is transmitted without direct contact; in this way, without opening or setting a mechanical connection structure, the integrity of the surface of the process chamber wall 5 is ensured, the sealing requirement of the process chamber in the process is met, the closed environment required in the process is maintained, and the wafer pollution is effectively prevented.

[0047] It should be noted that the first magnetic structure 41 of the driving adjustment shaft 2 and the second magnetic structure 42 of the driven adjustment shaft core 3 are separated by a certain distance, that is, there is an air gap between the first magnetic structure 41 and the second magnetic structure 42; the torque transmitted between the driving adjustment shaft 2 and the driven adjustment shaft core 3 is negatively correlated with the width of the air gap. The width of the air gap refers to the distance between the first magnetic structure 41 and the second magnetic structure 42 in the axial direction of the gas jet 1, for example, the distance b shown in the distance b. Figure 1

[0048] In some embodiments, the gas jet 1 includes a straight cylinder cavity 11 and a conical cavity 12; the straight cylinder cavity 11 is connected with the inner wall of the process chamber; the conical cavity 12 is connected with the straight cylinder cavity 11; the conical cavity 12 has a gas outlet P at one end away from the straight cylinder cavity 11, for spraying process gas.

[0049] In some examples, the aperture of the side of the conical cavity 12 away from the straight cylinder cavity 11 is smaller than the aperture of the side of the conical cavity 12 close to the straight cylinder cavity 11.

[0050] For example, the straight cylinder cavity 11 and the conical cavity 12 can be an integral structure.

[0051] In some embodiments, the gas spraying device further includes a guide rail groove 7; the guide rail groove 7 is located in the gas jet 1 and extends in the axial direction of the gas jet 1; wherein the driven adjustment shaft core 3 is movably connected with the guide rail groove 7; when the driven adjustment shaft core 3 rotates with the driving adjustment shaft 2, the driven adjustment shaft core 3 can retract into the guide rail groove 7 in the direction away from the gas outlet P, and extend out of the guide rail groove 7 in the direction close to the gas outlet P.

[0052] For example, the connection mode of the driven adjustment shaft core 3 and the guide rail groove 7 includes but is not limited to threaded connection and the like.

[0053] For example, the axial line of the guide rail groove 7 coincides with the axial line of the gas jet 1.

[0054] ​For example, the shape of the guide groove 7 matches the shape of the driven adjustment shaft core 3.

[0055] For example, the end of the guide groove 7 away from the process chamber wall 5 does not exceed the straight cylinder cavity 11 of the gas injection head 1.

[0056] For example, the size of the guide groove 7 in the axial direction of the gas injection head 1 and the parallel direction thereof is less than or equal to the size of the driven adjustment shaft core 3 in the axial direction of the gas injection head 1 and the parallel direction thereof.

[0057] It needs to be explained that since the end of the gas injection head 1 for spraying process gas is a conical cavity 12, as the driven adjustment shaft core 3 moves in and out along the axial direction of the gas injection head 1 in the conical cavity 12, the driven adjustment shaft core 3 can block the conical cavity 12 to different degrees, which corresponds to changing the size of the gas flow that can pass through the conical cavity 12.

[0058] In some embodiments, please refer to Figures 2-4 It is understood that when the driven adjustment shaft core 3 moves in and out along the axial direction of the gas injection head 1, the cross-sectional area of the gas flow channel of the gas injection head 1 is negatively correlated with the degree of coincidence between the driven adjustment shaft core 3 and the conical cavity 12.

[0059] It needs to be pointed out that the size of the gas flow sprayed by the gas injection head 1 is positively correlated with the cross-sectional area of the gas flow channel of the gas injection head 1.

[0060] In some examples, please refer to Figure 2 When the driven adjustment shaft core 3 is completely retracted into the guide groove 7, there is no overlapping part between the driven adjustment shaft core 3 and the conical cavity 12 at this time, and the cross-sectional area of the gas flow channel of the gas injection head 1 reaches the maximum.

[0061] In some examples, please refer to Figure 3 The width of the overlapping part between the driven adjustment shaft core 3 and the conical cavity 12 is d, and since the aperture of the conical cavity 12 gradually decreases in the direction close to the gas outlet P, the cross-sectional area of the gas flow channel of the gas injection head 1 is negatively correlated with the width d of the overlapping part.

[0062] In some examples, please refer to Figure 4 When the width of the overlapping part between the driven adjustment shaft core 3 and the conical cavity 12 reaches the maximum d0, the driven adjustment shaft core 3 completely blocks the gas outlet P at this time, and the gas injection head 1 stops spraying process gas.

[0063] It should be noted that the embodiment of the present application can also realize quantitative adjustment of the cross-sectional area of the gas flow channel of the gas nozzle 1 by the proportional relationship between the torque transmitted between the driving adjustment shaft 2 and the driven adjustment shaft core 3 and the extension distance of the driven adjustment shaft core 3. For example, the proportional relationship is related to the width of the air gap between the first magnetic structure 41 and the second magnetic structure 42, the cross-sectional area of the driven adjustment shaft core 3, and / or the size of the thread in the guide groove 7.

[0064] It should be noted that please refer to Figure 1 During the axial extension and retraction movement of the driven adjustment core shaft 3 along the gas nozzle 1, the greater the air gap width d between the first magnetic structure 41 and the second magnetic structure 42, the weaker the torque transmitted between the first magnetic structure 41 and the second magnetic structure 42. In the embodiment of the present application, when the driven adjustment core shaft 3 moves to a position near the gas outlet P (as shown in Figure 3 ), the torque transmitted between the first magnetic structure 41 and the second magnetic structure 42 needs to enable the driven adjustment core shaft 3 to overcome the frictional resistance between itself and the guide groove 7 and continue to move in the direction close to the gas outlet P, so as to realize the complete plugging of the driven adjustment shaft core 3 to the gas outlet P (as shown in Figure 4 ).

[0065] In some embodiments, please refer to Figure 1 The gas spraying device further comprises a limiting groove 8; the limiting groove 8 is located on the outer wall of the process chamber; the limiting groove 8 is opposite to the guide groove 7 in the axial direction of the gas nozzle 1; and the limiting groove 8 is used to limit the position of the driving adjustment shaft 2, so that the axis of the driving adjustment shaft 2 coincides with the axis of the driven adjustment shaft core 3.

[0066] For example, the shape of the limiting groove 8 includes but is not limited to a circular groove or a square groove, etc.

[0067] For example, the inner diameter size of the limiting groove 8 is greater than the radial size of the driving adjustment shaft 2.

[0068] For example, the axis of the limiting groove 8 coincides with the axis of the guide groove 7.

[0069] In some embodiments, please continue to refer to Figure 1 The gas spraying device further comprises a gas chamber 6; the gas chamber 6 is located between the gas nozzle 1 and the inner wall of the process chamber, and is used to introduce process gas; wherein the process gas is uniformly distributed in the gas chamber 6; and the gas nozzle 1 is in communication with the gas chamber 6.

[0070] In some examples, please continue to refer to Figure 1 The straight cylinder cavity 11 of the gas nozzle 1 is in communication with the gas chamber 6.

[0071] In some examples, the guide groove 7 can be arranged on the inner wall of the gas chamber 6.

[0072] In some embodiments, referring to Figure 5 , the number of the plurality of gas injection heads 1 is multiple; each of the plurality of gas injection heads 1 is arranged around the top inner wall of the process chamber; and each of the plurality of gas injection heads 1 is internally provided with a driven adjustment shaft core 3.

[0073] For example, the cross-sectional shape of the top inner wall of the process chamber includes but is not limited to a circle.

[0074] For example, the gas cavity 6 is located between the gas injection head 1 and the top inner wall of the process chamber, and is arranged around one side of the inner wall of the process chamber.

[0075] For example, the shape of the gas cavity 6 includes but is not limited to a circular ring.

[0076] In some examples, the plurality of gas injection heads 1 are in communication with the gas cavity 6.

[0077] For example, the plurality of gas injection heads 1 are centrally symmetric with the center of the top inner wall of the process chamber.

[0078] For example, the plurality of gas injection heads 1 can be arranged in groups around the top inner wall of the process chamber; wherein the number of gas injection heads 1 in each group of gas injection heads 1 ranges from 2 to 5; for example, the number of gas injection heads 1 in each group of gas injection heads 1 can be 2, 3, 4, or 5, etc.; it should be noted that Figure 5 In the above embodiment, three gas injection heads 1 are taken as an example for a group, but the present application is not limited thereto.

[0079] It should be noted that the plurality of gas injection heads 1 are internally provided with a driven adjustment shaft core 3; the embodiment of the present application can adjust the cross-sectional area of the gas flow passage of each gas injection head 1 through the driving adjustment shaft 2.

[0080] For example, when an individual gas injection head 1 has a gas flow reduction problem caused by crystallization blockage or the like, the driving adjustment shaft 2 can be used to adjust the position of the driven adjustment shaft core 3 in the abnormal gas injection head 1, thereby relatively increasing the gas flow of the abnormal gas injection head 1, to ensure the uniformity of the gas flow of each gas injection head 1 in the process chamber.

[0081] In summary, the unexpected technical effects that can be achieved by the embodiment of the present application at least include:

[0082] In this embodiment, a driven adjustment shaft core 3 is provided inside the gas nozzle 1. An active adjustment shaft 2 located outside the process chamber is magnetically coupled to the driven adjustment shaft core 3. This allows the driven adjustment shaft core 3 to rotate with the active adjustment shaft 2 by transmitting torque magnetically without direct contact with it. Simultaneously, it extends and retracts along the axial direction of the gas nozzle 1 to adjust the cross-sectional area of ​​the gas flow channel, thereby regulating the gas flow rate emitted from the gas nozzle 1. Thus, since the driven adjustment shaft core 3 is located inside the process chamber and the active adjustment shaft 2 is located outside the process chamber, they are isolated from each other by the process chamber wall 5 and magnetically coupled without direct contact. Therefore, the gas spraying device provided in this application embodiment does not need to open the process chamber when adjusting the gas flow rate, which can meet the requirements for the sealing of the process chamber during the process. It not only maintains the closed environment required in the process, but also effectively prevents wafer contamination and effectively improves the yield of process products. Furthermore, by combining the driven adjustment shaft core 3 with the gas nozzle 1, the cross-sectional area of ​​the gas flow channel of the gas nozzle 1 can be adjusted. Different flow rates of process gas can be sprayed without stopping the machine to open the chamber and replace the gas nozzle 1. While improving production efficiency, it also improves the uniformity of gas spraying in the process chamber, which is conducive to improving the uniformity of thin film deposition on the wafer surface and also improves the yield of wafer products.

[0083] This application also provides a semiconductor device according to some embodiments, which includes the gas spraying device in the above embodiments. The semiconductor device also possesses all the technical advantages of the aforementioned gas spraying device. It should be noted that the parts that are the same as or corresponding to the above embodiments can be referred to the corresponding descriptions of the above embodiments, and will not be described in detail below.

[0084] In some embodiments, please refer to Figure 5 The semiconductor device includes a process chamber A and a gas spraying device B as described in some of the foregoing embodiments of this application; the gas spraying device B is located on the process chamber A.

[0085] In some examples, there are multiple gas spraying devices B on the process chamber A; and multiple gas spraying devices B can be grouped and arranged around the top of the inner wall of the process chamber A.

[0086] For example, the cross-sectional shape of the top inner wall of process chamber A includes, but is not limited to, a circle.

[0087] For example, multiple gas spraying devices B are centrally symmetrical about the center of the top inner wall of the process chamber A.

[0088] By way of example, the semiconductor device includes, but is not limited to, a chemical vapor deposition (CVD) device; the semiconductor device may, for example, be a high-density plasma chemical vapor deposition (HDP-CVD) device.

[0089] In the description of the present specification, the description referring to the terms "some embodiments", "some examples", "exemplarily" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiments or examples are contained in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example.

[0090] The technical features of the above embodiments can be combined arbitrarily, and in order to make the description simple, not all possible combinations of the technical features in the above embodiments are described, however, as long as the combinations of the technical features do not contradict, they should be considered as the scope of the present application.

[0091] The above embodiments only express several implementation manners of the present application, the description is more specific and detailed, but it should not be understood as the limitation of the scope of the utility model patent. It should be pointed out that for those skilled in the art, on the premise of not departing from the concept of the present application, a number of modifications and improvements can be made, which all belong to the protection scope of the present application.

Claims

1. A gas spraying device, characterized by The gas spraying device is located on the process chamber. The gas spraying device comprises: A gas spraying head located inside the process chamber, the gas spraying head having a gas outlet at one end facing away from the inner wall of the process chamber; A driving adjustment shaft located outside the process chamber, extending along the axial direction of the gas spraying head; the driving adjustment shaft having a first magnetic structure at one end close to the process chamber; A driven adjustment shaft core located inside the gas spraying head, extending along the axial direction of the gas spraying head; the driven adjustment shaft core having a second magnetic structure at one end close to the driving adjustment shaft; 2. The gas sparging device of claim 1, wherein, The driven adjustment shaft core and the driving adjustment shaft are magnetically coupled; when the driven adjustment shaft core rotates with the driving adjustment shaft, the driven adjustment shaft core moves along the axial direction of the gas spraying head to adjust the cross-sectional area of the gas flow channel of the gas spraying head.

3. The gas sparging device of claim 1, wherein, The driving adjustment shaft and the driven adjustment shaft core are not in direct contact and are separated by the wall of the process chamber. The gas spraying head comprises: A straight cylinder cavity connected to the inner wall of the process chamber; 4. The gas-spraying device according to claim 3, characterized in that A conical cavity connected to the straight cylinder cavity; the conical cavity having a gas outlet at one end facing away from the straight cylinder cavity for spraying process gas.

5. The gas sparging device of claim 1, wherein, When the driven adjustment shaft core moves along the axial direction of the gas spraying head, the cross-sectional area of the gas flow channel of the gas spraying head is negatively correlated with the degree of overlap between the driven adjustment shaft core and the conical cavity. Further comprising: A gas chamber located between the gas spraying head and the inner wall of the process chamber for introducing process gas; 6. The gas sparging device of claim 1, wherein, The process gas is uniformly distributed in the gas chamber; the gas spraying head is in communication with the gas chamber. Further comprising: A guide rail groove located inside the gas spraying head, extending along the axial direction of the gas spraying head; 7. The gas-spraying device according to claim 6, characterized in that The driven adjustment shaft core is movably connected to the guide rail groove; when the driven adjustment shaft core rotates with the driving adjustment shaft, the driven adjustment shaft core can retract into the guide rail groove in a direction away from the gas outlet and extend out of the guide rail groove in a direction close to the gas outlet. Further comprising:

8. The gas-spraying apparatus according to claim 1, wherein A limiting groove located on the outer wall of the process chamber; the limiting groove is directly opposite the guide rail groove in the axial direction of the gas spraying head; the limiting groove is used to limit the position of the driving adjustment shaft so that the axis of the driving adjustment shaft coincides with the axis of the driven adjustment shaft core.

9. The gas sparging device of claim 1, wherein, The first magnetic structure and the second magnetic structure have opposite electrode polarities when they are directly opposite in the direction parallel to the axis of the gas spraying head.

10. A semiconductor device, characterized by comprising: The number of gas spraying heads is multiple; each gas spraying head is arranged around the top of the inner wall of the process chamber; each gas spraying head has the driven adjustment shaft core inside. The gas spraying device comprises a process chamber and any one of claims 1-9; the gas spraying device is located on the process chamber.

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