Laminated conducting bar
By using a stacked busbar design, the problems of poor current carrying capacity and excessive parasitic inductance of IGBT modules are solved, resulting in improved current carrying capacity, reduced heat generation, and cost savings. This adapts to different circuit requirements and improves the stability and flexibility of power electronic systems.
Patent Information
- Application Number
- CN202423227527.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-26
- Publication Date
- 2026-02-27
- Estimated Expiration
- 2034-12-26
AI Technical Summary
IGBT modules face problems such as poor current carrying capacity, excessive temperature, and excessive parasitic inductance during operation. Traditional multilayer busbar design leads to limited current carrying capacity, increased cost, and affected system stability.
The design employs a stacked busbar design, including a positive stacked busbar and a negative stacked busbar. By placing insulating material between the positive and negative busbars of the IGBT pins and using an overlapping and staggered layout, the width of the busbars is increased to improve current carrying capacity and reduce parasitic inductance.
Without increasing the thickness of the busbar, it significantly improves current carrying capacity, reduces heat generation, reduces parasitic inductance, lowers costs, and enhances the stability and flexibility of power electronic systems to meet different circuit requirements.
Smart Images
Figure CN223956317U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the field of power electronics, concretely is a laminated conductive row. BACKGROUND
[0002] In the field of modern power electronics, insulated gate bipolar transistors (IGBT) as a kind of full-control voltage drive type power semiconductor device, because it has input impedance high, control power small, switching frequency high, on current, on loss small etc. Characteristics, be widely used in frequency converter, wind power generation converter, electric automobile driving system etc. Many fields. The performance and reliability of IGBT are crucial to the operating efficiency and stability of the entire power electronic system.
[0003] However, with the rapid development of power electronics technology and the continuous improvement of application demand, IGBT module faces a series of challenges in the working process. Among them, the current-carrying effect and temperature control problem of IGBT lap joint pin are particularly prominent. In the traditional technology, as shown in Figure 7 The conductive row design of IGBT is often limited by the pitch of IGBT pin, which limits the width of conductive row, and further limits the current-carrying capacity. When IGBT module needs to handle larger current, only by increasing the thickness of conductive row to improve the current-carrying capacity, but this not only increases the cost and weight, but also may cause new heat dissipation problem.
[0004] In addition, in the layout of traditional laminated busbar, positive and negative conductive row needs to cut out multiple gaps at IGBT lap joint conductive row to avoid short circuit. This design leads to the decrease of laminated busbar overlapping area, and further generates large parasitic inductance. The existence of parasitic inductance not only reduces the switching performance of IGBT, increases the generation of harmonic wave, but also may have adverse effects on the stability and reliability of power electronic system. UTILITY MODEL CONTENTS
[0005] In view of the deficiencies of the prior art, the utility model provides a laminated conductive row to solve the problems of poor current-carrying effect, high temperature and large parasitic inductance at IGBT lap joint pin.
[0006] To achieve the above purpose, the utility model realizes the following technical scheme:
[0007] A laminated conductive row, including positive laminated conductive row and negative laminated conductive row, one side of the positive laminated conductive row is provided with IGBT pin positive conductive row, one side of the negative laminated conductive row is provided with IGBT pin negative conductive row, the positive laminated conductive row and the negative laminated conductive row are laminated, characterized by: the IGBT pin positive conductive row and the IGBT pin negative conductive row are also laminated.
[0008] The preferred technical solution further comprises an insulating material arranged between the positive laminated conductive row and the negative laminated conductive row.
[0009] The preferred technical solution further comprises an insulating material arranged between the positive laminated conductive row and the negative laminated conductive row.
[0010] The preferred technical solution further comprises an insulating material arranged between the positive laminated conductive row and the negative laminated conductive row.
[0011] The preferred technical solution further comprises an additional laminated conductive row, which has a plurality of additional laminated conductive rows arranged in layers with the positive laminated conductive row and the negative laminated conductive row, and an additional IGBT pin conductive row arranged on one side of the additional laminated conductive row, which is arranged in layers with the IGBT pin positive conductive row and the IGBT pin negative conductive row.
[0012] The preferred technical solution further comprises an insulating material arranged between the positive laminated conductive row and the negative laminated conductive row.
[0013] The utility model provides a laminated conductive row, which has the following beneficial effects:
[0014] Increase the carrying capacity and reduce the heat generation: By widening the design of the IGBT pin conductive row and combining the layout of the upper and lower overlapping misalignment, the width of the IGBT pin conductive row is effectively increased, thereby significantly improving the carrying capacity without increasing the thickness of the conductive row. The increase in width helps to disperse the current density, reduces the heat generation of the conductive row, and prolongs the service life of the IGBT module.
[0015] Reduce the parasitic inductance: By optimizing the structure of the laminated conductive row, the overlapping area of the positive and negative conductive rows is increased, thereby effectively reducing the generation of parasitic inductance. The reduction of parasitic inductance helps to reduce the harmonic generation of IGBT in the switching process, improves the stability and performance of the power electronic system.
[0016] Reduce the cost: Since the carrying capacity is improved without increasing the thickness of the conductive row, the material cost can be saved, and the overall manufacturing cost of the IGBT module can be reduced. At the same time, the optimized structure design also helps to simplify the production process and improve the production efficiency.
[0017] Improve flexibility and adaptability: The proposed laminated conductive row design not only applies to standard IGBT modules, but also can adapt to higher voltage levels or more complex circuit requirements by introducing additional laminated conductive rows. This design flexibility makes the patent widely applicable to various power electronic systems, meeting the application requirements in different scenarios.
[0018] In conclusion, the laminated conductive bar provided by the utility model has the advantages of improving the carrying capacity, reducing the heat generation, reducing the parasitic inductance, reducing the cost, improving the flexibility and adaptability and the like, and provides strong support for the development of modern power electronic technology. BRIEF DESCRIPTION OF DRAWINGS
[0019] Figure 1 It is a structure schematic view of the embodiment 1 of the utility model;
[0020] Figure 2 It is an explosion structure schematic view of the embodiment 1 of the utility model;
[0021] Figure 3 It is a top view structure schematic view of the embodiment 1 of the utility model;
[0022] Figure 4 It is a structure schematic view when the embodiment 1 of the utility model is connected with IGBT;
[0023] Figure 5 It is a front view structure schematic view of the embodiment 2 of the utility model;
[0024] Figure 6 It is a side view structure schematic view of the embodiment 2 of the utility model;
[0025] Figure 7 It is a traditional laminated conductive bar structure schematic view;
[0026] In the drawing: 1, positive pole laminated conductive bar; 2, negative pole laminated conductive bar; 3, insulating material; 4, additional laminated conductive bar; 5, IGBT; 10, IGBT pin positive pole conductive bar; 20, IGBT pin negative pole conductive bar; 30, overlapping area; 40, additional IGBT pin conductive bar. DETAILED DESCRIPTION
[0027] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the utility model. EMBODIMENT
[0028] As Figures 1-4As shown in FIGS. 1 and 2, a laminated busbar includes a positive laminated busbar 1 and a negative laminated busbar 2. The positive laminated busbar 1 is provided with an IGBT pin positive busbar 10 on one side. The negative laminated busbar 2 is provided with an IGBT pin negative busbar 20 on one side. The positive laminated busbar 1 and the negative laminated busbar 2 are laminated. The IGBT pin positive busbar 10 and the IGBT pin negative busbar 20 are also laminated. An IGBT 5 is connected to the IGBT pin positive busbar 10 and the IGBT pin negative busbar 20.
[0029] An insulating material 3 is arranged between the positive laminated busbar 1 and the negative laminated busbar 2 and in an overlapping area 30 of the IGBT pin positive busbar 10 and the IGBT pin negative busbar 20.
[0030] The utility model aims at optimizing current conduction and reducing heat generation, while reducing the influence of parasitic inductance. The positive laminated busbar 1 and the negative laminated busbar 2 are realized by overlapping layout, while ensuring that the busbar will not be short-circuited, which is realized by adding the insulating material 3 in the middle. When the IGBT pin positive busbar 10 and the IGBT pin negative busbar 20 are laminated, by accurately designing their width and position, compared with the traditional structure of the same size, the IGBT pin positive busbar 10 and the IGBT pin negative busbar 20 of the utility model can increase a wider width, while better avoiding short-circuit. This design can increase the width of the IGBT pin positive busbar 10 and the IGBT pin negative busbar 20 without increasing the thickness of the busbar, improve the current-carrying capacity and reduce heat generation; at the same time, the overlapping area of the laminated busbar is also increased to reduce the influence of parasitic inductance. By optimizing the structural design of the laminated busbar, the performance and reliability of the IGBT module can be further improved to meet the demand of modern power electronics technology for efficient, stable and compact power electronics systems. Embodiment
[0031] As shown in FIGS. 1 and 2, a laminated busbar includes a positive laminated busbar 1 and a negative laminated busbar 2. The positive laminated busbar 1 is provided with an IGBT pin positive busbar 10 on one side. The negative laminated busbar 2 is provided with an IGBT pin negative busbar 20 on one side. The positive laminated busbar 1 and the negative laminated busbar 2 are laminated. The IGBT pin positive busbar 10 and the IGBT pin negative busbar 20 are also laminated. An IGBT 5 is connected to the IGBT pin positive busbar 10 and the IGBT pin negative busbar 20. Figure 5 and 6 As shown in FIGS. 1 and 2, a laminated busbar includes a positive laminated busbar 1 and a negative laminated busbar 2. The positive laminated busbar 1 is provided with an IGBT pin positive busbar 10 on one side. The negative laminated busbar 2 is provided with an IGBT pin negative busbar 20 on one side. The positive laminated busbar 1 and the negative laminated busbar 2 are laminated. The IGBT pin positive busbar 10 and the IGBT pin negative busbar 20 are also laminated. An IGBT 5 is connected to the IGBT pin positive busbar 10 and the IGBT pin negative busbar 20. Figure 5 and 6 As shown in FIGS. 1 and 2, a laminated busbar includes a positive laminated busbar 1 and a negative laminated busbar 2. The positive laminated busbar 1 is provided with an IGBT pin positive busbar 10 on one side. The negative laminated busbar 2 is provided with an IGBT pin negative busbar 20 on one side. The positive laminated busbar 1 and the negative laminated busbar 2 are laminated. The IGBT pin positive busbar 10 and the IGBT pin negative busbar 20 are also laminated. An IGBT 5 is connected to the IGBT pin positive busbar 10 and the IGBT pin negative busbar 20.
[0032] The additional layer of conductive traces 4 of embodiment 2 is an extra conductive trace that can be placed between the positive layer of conductive traces 1 and the negative layer of conductive traces 2 in a stacked configuration. The introduction of the additional layer of conductive traces 4 provides more flexibility and redundancy for circuit design. This conductive trace is placed in a stacked configuration with the IGBT pin positive conductive trace 10 and the IGBT pin negative conductive trace 20, also with a widened design and separated by an insulating material to ensure the correct flow of current. The placement of the insulating material 3 further enhances the safety of the circuit, preventing short circuits between different potential layers. Embodiment 2 not only inherits all the advantages of embodiment 1, such as increased current capacity, reduced heat and parasitic inductance, etc., but also provides higher flexibility and adaptability for circuit design by introducing the additional layer of conductive traces 4. This design is particularly suitable for application scenarios that require the handling of high voltages or complex circuits.
[0033] Through the above design, embodiment 2 not only inherits all the advantages of embodiment 1, such as increased current capacity, reduced heat and parasitic inductance, etc., but also provides higher flexibility and adaptability for circuit design by introducing the additional layer of conductive traces 4. This design is particularly suitable for application scenarios that require the handling of high voltages or complex circuits.
[0034] Although embodiments of the present application have been shown and described, it is to be understood that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present application. The scope of the present application is defined by the appended claims and their equivalents.
Claims
1. A stacked conductive bus, comprising a positive electrode stacked conductive bus (1) and a negative electrode stacked conductive bus (2), wherein a positive electrode conductive bus (10) for an IGBT pin is disposed on one side of the positive electrode stacked conductive bus (1), and a negative electrode conductive bus (20) for an IGBT pin is disposed on one side of the negative electrode stacked conductive bus (2), wherein the positive electrode stacked conductive bus (1) and the negative electrode stacked conductive bus (2) are stacked, characterized in that: The IGBT pin positive electrode busbar (10) and the IGBT pin negative electrode busbar (20) are also stacked.
2. The stacked conductive busbar according to claim 1, characterized in that: It also includes an insulating material (3), which is disposed between the positive electrode stacked conductive bus (1) and the negative electrode stacked conductive bus (2).
3. A stacked conductive busbar according to claim 2, characterized in that: The insulating material (3) is disposed between the positive electrode busbar (10) of the IGBT pin and the negative electrode busbar (20) of the IGBT pin.
4. A stacked conductive busbar according to claim 3, characterized in that: There is an overlapping area (30) between the IGBT pin positive electrode conductive bus (10) and the IGBT pin negative electrode conductive bus (20), and the insulating material (3) is disposed in the overlapping area (30).
5. A stacked conductive busbar according to claim 3, characterized in that: It also includes an additional stacked conductive bus (4), which has several additional stacked conductive buses. The additional stacked conductive bus (4) is stacked with the positive electrode stacked conductive bus (1) and the negative electrode stacked conductive bus (2). An additional IGBT pin conductive bus (40) is provided on one side of the additional stacked conductive bus (4). The additional IGBT pin conductive bus (40) is stacked with the IGBT pin positive electrode conductive bus (10) and the IGBT pin negative electrode conductive bus (20).
6. A stacked conductive busbar according to claim 5, characterized in that: The insulating material (3) is disposed between all adjacent conductive bars.