Gas distribution structure and semiconductor device

Abstract

The utility model discloses a gas distribution structure and semiconductor equipment, and the gas distribution structure is used for communicating with a cavity of the semiconductor equipment, and comprises an upper gas distribution module and a lower gas distribution module which are stacked; the upper gas distribution module comprises a plurality of first conveying pipelines which are located at different positions in the upper gas distribution module and are isolated from one another; the lower gas distribution module comprises a main conveying pipeline penetrating through the lower gas distribution module, the input end of the main conveying pipeline is communicated with all the first conveying pipelines, and the output end of the main conveying pipeline is used for being communicated with a cavity of the semiconductor equipment. As the plurality of first conveying pipelines are isolated from one another, the probability of contact and reaction of different types of gases in the first conveying pipelines is reduced in the process of providing different types of gases to the cavity of the semiconductor equipment through the first conveying pipelines, so that the probability of damage to the inner wall of the gas distribution structure due to chemical reaction is reduced, and the service life of the semiconductor equipment is prolonged. And the number of particles remained on the surface of the wafer due to chemical reaction is reduced, so that the processing quality of a semiconductor process is improved, and the service life of the gas distribution structure is prolonged.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, and in particular to a gas distribution structure and semiconductor equipment. Background Technology

[0002] Semiconductor equipment is the equipment used to manufacture chips. With the rapid growth of the semiconductor integrated circuit (IC) industry, semiconductor technology, driven by Moore's Law, continues to advance towards smaller process nodes, enabling integrated circuits to develop in the direction of smaller size, higher circuit precision, and higher circuit complexity. Semiconductor equipment has become the core for the downward breakthrough of advanced process chips.

[0003] In chip manufacturing processes, a common step is film deposition on wafers. As process nodes continue to shrink, the quality requirements for these films become increasingly stringent, making it difficult for films prepared using traditional deposition equipment to meet current quality standards.

[0004] Therefore, there is an urgent need for a gas separation structure in deposition equipment to improve the film quality of the deposition process. Utility Model Content

[0005] The problem solved by this embodiment of the invention is to provide a gas distribution structure to improve the performance of the gas distribution structure.

[0006] To address the aforementioned problems, this utility model provides a gas distribution structure for communicating with the chamber of a semiconductor device, comprising: an upper gas distribution module and a lower gas distribution module stacked together; the upper gas distribution module includes: a plurality of first delivery pipelines, each located at a different position within the upper gas distribution module and isolated from each other; the lower gas distribution module includes: a main delivery pipeline passing through the lower gas distribution module, the input end of the main delivery pipeline being connected to the output end of each of the first delivery pipelines, and the output end of the main delivery pipeline being used to communicate with the chamber of the semiconductor device.

[0007] Optionally, the gas distribution structure further includes: a plurality of second delivery pipelines located on the side or top of the first delivery pipeline, one end of the second delivery pipeline being connected to the corresponding first delivery pipeline, and the other end being used to connect to an external gas source.

[0008] Optionally, the second delivery pipeline includes a transverse delivery pipeline and a longitudinal delivery pipeline. The longitudinal delivery pipeline is located at the top of the first delivery pipeline and extends in a direction perpendicular to the top surface of the upper gas distribution module. The transverse delivery pipeline is located on the side of the first delivery pipeline and extends in a direction parallel to the top surface of the upper gas distribution module.

[0009] Optionally, in the plurality of second conveying lines, at least one of the transverse conveying lines and at least one of the longitudinal conveying lines are connected to the same first conveying line; wherein the transverse conveying line is connected to the side of the first conveying line and the longitudinal conveying line is connected to the top of the first conveying line.

[0010] Optionally, at least one of the plurality of first delivery lines includes a reactant gas delivery line; at least one of the transverse delivery lines and at least one of the longitudinal delivery lines are connected to the same reactant gas delivery line.

[0011] Optionally, the longitudinal delivery pipeline connected to the reaction gas delivery pipeline includes a water vapor delivery pipeline.

[0012] Optionally, the plurality of first delivery lines further include a clean gas delivery line; at least one of the transverse delivery lines is connected to the clean gas delivery line.

[0013] Optionally, each of the first delivery pipelines includes: a first sub-delivery pipeline located in the bottom surface of the upper gas distribution module and connected to the input end of the main delivery pipeline; the reaction gas delivery pipeline further includes: a mixing pipeline located between the first sub-delivery pipeline and the transverse delivery pipeline, and located between the first sub-delivery pipeline and the longitudinal delivery pipeline, the output end of the mixing pipeline being connected to the input end of the first sub-delivery pipeline, and the input end of the mixing pipeline being connected to the output end of the transverse delivery pipeline and the output end of the longitudinal delivery pipeline, respectively.

[0014] Optionally, the reaction gas delivery pipeline further includes: a first reducing pipeline located between the gas mixing pipeline and the first sub-delivery pipeline, wherein the large end of the first reducing pipeline is connected to the output end of the gas mixing pipeline, and the small end of the first reducing pipeline is connected to the input end of the first sub-delivery pipeline.

[0015] Optionally, the diameter of the gas mixing pipeline is greater than or equal to 40.5 mm, and the length of the gas mixing pipeline is greater than or equal to 25 mm.

[0016] Optionally, both the transverse conveying pipeline and the longitudinal conveying pipeline include a second sub-conveying pipeline, the input end of which is used to connect to an external gas source; the second sub-conveying pipeline of the transverse conveying pipeline includes: a first part located in the upper gas distribution module, and a second part located on the side of the upper gas distribution module, the second part being connected to the first part; the second sub-conveying pipeline of the longitudinal conveying pipeline is also located at the top of the upper gas distribution module; the longitudinal conveying pipeline further includes: a second reducing pipeline located between the second sub-conveying pipeline and the mixing pipeline, the small end of the second reducing pipeline being connected to the output end of the second sub-conveying pipeline, and the large end of the second reducing pipeline being connected to the input end of the mixing pipeline.

[0017] Optionally, the length of the first sub-delivery line ranges from 20 mm to 30 mm.

[0018] Optionally, both the transverse conveying pipeline and the longitudinal conveying pipeline include a second sub-conveying pipeline, the input end of which is used to connect to an external gas source; the second sub-conveying pipeline of the transverse conveying pipeline includes: a first part located in the upper gas distribution module, and a second part located on the outer wall of the upper gas distribution module, the second part being connected to the first part; the second sub-conveying pipeline of the longitudinal conveying pipeline is also located at the top of the upper gas distribution module.

[0019] Optionally, the main delivery pipeline includes: a connecting pipeline, the input end of which is connected to the output end of each of the first delivery pipelines; and a guiding pipeline, the input end of which is connected to the output end of the connecting pipeline.

[0020] Optionally, the connecting pipe is a third reducing pipe, the large end of the third reducing pipe has a closed annular cross-sectional shape and surrounds the output ends of each of the first conveying pipes to communicate with the output ends of each of the first conveying pipes; the input end of the guiding pipe is connected to the small end of the third reducing pipe.

[0021] Optionally, the main delivery pipeline further includes a fourth reducing pipeline, the small end of which is connected to the output end of the guide pipeline, and the large end of which is used to connect to the chamber of the semiconductor device.

[0022] Optionally, the diameter of the guide pipe is less than or equal to 16 mm, and the length of the guide pipe is greater than or equal to 25 mm.

[0023] Optionally, both the main delivery pipeline and the first delivery pipeline extend in a direction perpendicular to the top surface of the upper gas distribution module.

[0024] Accordingly, this utility model embodiment also provides a semiconductor device, including: a chamber; and the gas distribution structure described in this utility model embodiment, wherein the output end of the main delivery pipeline of the gas distribution structure is connected to the chamber.

[0025] Compared with the prior art, the technical solution of this utility model embodiment has the following advantages:

[0026] The gas distribution structure provided in this embodiment includes an upper gas distribution module and a lower gas distribution module stacked together. The upper gas distribution module includes multiple first delivery pipelines located at different positions within the upper gas distribution module and isolated from each other. The lower gas distribution module includes a main delivery pipeline passing through the lower gas distribution module, and the input end of the main delivery pipeline is connected to the output end of each of the first delivery pipelines. Because the multiple first delivery pipelines are isolated from each other, the probability of different types of gases contacting and reacting in the first delivery pipelines is reduced during the process of supplying different types of gases to the chamber of the semiconductor device through each first delivery pipeline. This reduces the probability of the inner wall of the gas distribution structure being damaged by chemical reactions, and correspondingly reduces the number of particles remaining on the wafer surface due to chemical reactions, thereby improving the quality of semiconductor processing and the service life of the gas distribution structure. Attached Figure Description

[0027] Figure 1 This is a cross-sectional structural schematic diagram of an embodiment of the gas distribution structure of this utility model;

[0028] Figure 2 This is a top view of the upper gas distribution module of the gas distribution structure of this utility model;

[0029] Figure 3 This is a top view of the lower gas distribution module of the gas distribution structure of this utility model. Detailed Implementation

[0030] Flowable chemical vapor deposition (FCVD) can fill trenches with high aspect ratios, including deposition (DEP) and curing (CURE) steps performed sequentially in different process chambers.

[0031] However, research has revealed that corrosion of the inner wall of the gas distribution structure due to chemical reactions is a common problem during the curing process. [For example, the NF3 (nitrogen trifluoride) gas used to clean the curing chamber, after plasma activation treatment, contains NF2...] + F - The active ingredients react with residual H2O vapor and other gases in the gas separation structure, causing corrosion of the inner wall of the gas separation structure. This results in an excessive number of particles on the wafer surface, which in turn affects the quality of the deposited film.

[0032] To address the aforementioned technical problems, this utility model provides a gas distribution structure for communicating with the chamber of a semiconductor device, comprising: an upper gas distribution module and a lower gas distribution module stacked together; the upper gas distribution module includes: a plurality of first delivery pipelines, each located at a different position within the upper gas distribution module and isolated from each other; the lower gas distribution module includes: a main delivery pipeline passing through the lower gas distribution module, wherein the input end of the main delivery pipeline is connected to the output end of each of the first delivery pipelines, and the output end of the main delivery pipeline is used to communicate with the chamber of the semiconductor device.

[0033] The solution disclosed in this embodiment includes a stacked upper gas distribution module and a lower gas distribution module. The upper gas distribution module includes multiple first delivery pipelines located at different positions within the upper gas distribution module and isolated from each other. The lower gas distribution module includes a main delivery pipeline passing through the lower gas distribution module, with the input end of the main delivery pipeline connected to the output end of each of the first delivery pipelines. Because the multiple first delivery pipelines are isolated from each other, the probability of different types of gases contacting and reacting in the first delivery pipelines is reduced during the supply of different types of gases to the semiconductor device chamber through each first delivery pipeline. This reduces the probability of the inner wall of the gas distribution structure being damaged by chemical reactions, and correspondingly reduces the number of particles remaining on the wafer surface due to chemical reactions, thereby improving the quality of semiconductor processing and the service life of the gas distribution structure.

[0034] To make the above-mentioned objectives, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0035] Figure 1 This is a cross-sectional view of one embodiment of the gas distribution structure of this utility model. Figure 2 This is a top view of the upper air distribution module of the air distribution structure of this utility model. Figure 3 This is a top view of the lower gas distribution module of the gas distribution structure of this utility model.

[0036] refer to Figures 1 to 3 In this embodiment, the gas distribution structure 100 is used to communicate with the chamber of the semiconductor device, and includes: an upper gas distribution module 110 and a lower gas distribution module 120 stacked together; the upper gas distribution module 110 includes: a plurality of first delivery pipes 111, which are located at different positions in the upper gas distribution module 110 and isolated from each other; the lower gas distribution module 120 includes: a main delivery pipe 121, which passes through the lower gas distribution module 120, and the input end of the main delivery pipe 121 is connected to the output end of each of the first delivery pipes 111, and the output end of the main delivery pipe 121 is used to communicate with the chamber of the semiconductor device (not shown).

[0037] The gas distribution structure 100 is used to communicate with the chamber of the semiconductor device and to supply gas to the chamber.

[0038] The upper gas distribution module 110 is used to provide a spatial location for forming the first delivery pipeline 111.

[0039] In this embodiment, the upper gas distribution module 110 includes an upper gas distribution aluminum block. The upper gas distribution aluminum block has good thermal conductivity, which is beneficial for the rapid transfer of heat during the process of supplying gas to the chamber, thereby making the temperature stability of the gas better during the transportation process; moreover, the upper gas distribution aluminum block also has good hardness and is not easy to rust, which is beneficial for improving the service life of the upper gas distribution module 110.

[0040] Since the multiple first delivery lines 111 are isolated from each other, the probability of different types of gases coming into contact and reacting in the first delivery lines 111 is reduced during the process of supplying different types of gases to the chamber of the semiconductor device through each first delivery line 111. This reduces the probability that the inner wall of the gas distribution structure 100 will be damaged by chemical reactions, and correspondingly reduces the number of particles remaining on the wafer surface due to chemical reactions. This improves the quality of semiconductor processing and the service life of the gas distribution structure 100.

[0041] In this embodiment, at least one of the plurality of first delivery pipelines 111 includes a reaction gas delivery pipeline 115.

[0042] The reaction gas delivery line 115 is used to supply reaction gas to the chamber of the semiconductor device.

[0043] In this embodiment, each of the first delivery pipelines 111 includes a first sub-delivery pipeline 111', which is located in the bottom surface of the upper gas distribution module 110 and is connected to the input end of the main delivery pipeline 121.

[0044] Gas from an external gas source is transported to the main delivery pipeline 121 via the first sub-delivery pipeline 111'.

[0045] It should be noted that the length L1 of the first sub-conveying pipeline 111' (e.g., Figure 1 The length L1 of the first sub-conveying pipe 111' (as shown) should not be too short or too long. If the length L1 of the first sub-conveying pipe 111' is too short, it may result in an unsatisfactory effect in reducing the contact and reaction of different types of gases in the first sub-conveying pipe 111'; if the length L1 of the first sub-conveying pipe 111' is too long, it may increase the difficulty of forming the first sub-conveying pipe 111' in the upper gas distribution module 110. Therefore, in this embodiment, the length L1 of the first sub-conveying pipe 111' ranges from 20 mm to 30 mm.

[0046] As an example, the first delivery conduit 111 extends in a direction perpendicular to the top surface of the upper gas distribution module 110. In other embodiments, the first delivery conduit may extend in other directions.

[0047] As another example, the number of the first delivery pipes 111 is two. In other embodiments, the number of the first delivery pipes may also be three, four, etc.

[0048] In this embodiment, the plurality of first delivery pipelines 111 further include a clean gas delivery pipeline 116.

[0049] The clean gas delivery line 116 is used to supply clean gas to the chamber of the semiconductor device.

[0050] In this embodiment, the gas distribution structure 100 further includes: a plurality of second delivery pipes 112 located on the side or top of the first delivery pipe 111, one end of the second delivery pipe 112 being connected to the corresponding first delivery pipe 111, and the other end being used to connect to an external gas source (not shown).

[0051] The second delivery pipeline 112 is used to supply the corresponding gas to the corresponding first delivery pipeline 111.

[0052] The external gas source is used to supply gas to the gas distribution structure 100.

[0053] Specifically, the second conveying pipeline 112 includes a transverse conveying pipeline 113 and a longitudinal conveying pipeline 114. The longitudinal conveying pipeline 114 is located at the top of the first conveying pipeline 111 and extends in a direction perpendicular to the top surface of the upper gas distribution module 110. The transverse conveying pipeline 113 is located on the side of the first conveying pipeline 111 and extends in a direction parallel to the top surface of the upper gas distribution module 110.

[0054] In other words, the first conveying pipeline 111 can be connected to the transverse conveying pipeline 113 or the longitudinal conveying pipeline 114, so that gas can be conveyed to the first conveying pipeline 111 from different directions, thereby reducing the difficulty of conveying gas to the corresponding first conveying pipeline 111.

[0055] More specifically, both the transverse conveying pipeline 113 and the longitudinal conveying pipeline 114 include a second sub-conveying pipeline 112', the input end of which is used to connect to an external gas source; the second sub-conveying pipeline 112' of the transverse conveying pipeline 113 includes a first part 1131 located in the upper gas distribution module 110 and a second part 1132 located on the outer wall of the upper gas distribution module 110, the second part 1132 and the first part 1131 being connected; the second sub-conveying pipeline 112' of the longitudinal conveying pipeline 114 is also located at the top of the upper gas distribution module 110.

[0056] As an example, the first part 1131 and the second part 1132 are fixedly connected by a flange head, a sealing ring, and fasteners (e.g., screws).

[0057] In other embodiments, in the same longitudinal delivery pipeline, a portion of the second sub-delivery pipeline is located on the top surface of the upper gas distribution module, and the remaining second sub-delivery pipeline is located on the top surface of the upper gas distribution module.

[0058] In this embodiment, among the plurality of second conveying pipelines 112, at least one of the transverse conveying pipelines 113 and at least one of the longitudinal conveying pipelines 114 are connected to the same first conveying pipeline 111; wherein, the transverse conveying pipeline 113 is connected to the side of the first conveying pipeline 111, and the longitudinal conveying pipeline 114 is connected to the top of the first conveying pipeline 111.

[0059] It is understood that during gas transport, additional acceleration occurs due to gravity. Therefore, the gas entering the first transport pipe 111 via the longitudinal transport pipe 114 has a high initial velocity.

[0060] At least one of the transverse conveying pipes 113 and at least one of the longitudinal conveying pipes 114 are connected to the same first conveying pipe 111, which facilitates the selection of a suitable second conveying pipe 112 to convey gas according to the specific gas type and the distribution of gas conveying pipes outside the gas distribution structure 100, so that the initial velocity of the gas entering the first conveying pipe 111 meets the corresponding preset requirements, thereby reducing the probability of gas remaining in the first conveying pipe 111 and the main conveying pipe 121, and further reducing the probability of different types of gases contacting and reacting.

[0061] In this embodiment, at least one of the transverse conveying pipes 113 and at least one of the longitudinal conveying pipes 114 are connected to the same reaction gas conveying pipe 115, so that the initial velocity of the reaction gas entering the reaction gas conveying pipe 115 meets the corresponding preset requirements.

[0062] As an example, one of the transverse delivery lines 113 and one of the longitudinal delivery lines 114 are connected to the same reactant gas delivery line 115. In other embodiments, there may be multiple transverse delivery lines and one longitudinal delivery line connected to the same reactant gas delivery line, or one transverse delivery line and multiple longitudinal delivery lines connected to the same reactant gas delivery line, or multiple transverse delivery lines and multiple longitudinal delivery lines connected to the same reactant gas delivery line.

[0063] Specifically, the longitudinal conveying pipeline 114 connected to the reaction gas conveying pipeline 115 includes a water vapor conveying pipeline, which is beneficial to ensure that the water vapor entering the reaction gas conveying pipeline 115 has a large initial velocity, thereby making it easier for the initial velocity of the water vapor to meet the corresponding preset requirements. Consequently, the water vapor flows more smoothly in the reaction gas conveying pipeline 115 and the main conveying pipeline 121, thereby reducing the probability of water vapor remaining in the reaction gas conveying pipeline 115 and the main conveying pipeline 121, and correspondingly reducing the probability of water vapor contacting and reacting with other types of gases.

[0064] More specifically, the transverse delivery line 113, which is connected to the reactant gas delivery line 115, includes an oxygen source gas delivery line. The oxygen source delivery line is used to deliver one or both of oxygen and ozone gas.

[0065] In this embodiment, at least one of the transverse delivery pipes 113 is connected to the clean gas delivery pipe 116.

[0066] Since the lateral delivery pipeline 113 extends in a direction parallel to the top surface of the upper gas distribution module 110, it is easier to connect the lateral delivery pipeline 113 with the clean gas delivery pipeline 116, thereby facilitating the supply of clean gas to the chamber of the semiconductor device through the lateral delivery pipeline 113, the clean gas delivery pipeline 116, and the main delivery pipeline 121.

[0067] It should be noted that one of the transverse delivery pipes 113 is connected to the clean gas delivery pipe 116. In other embodiments, multiple transverse delivery pipes may be connected to the clean gas delivery pipe.

[0068] Specifically, the cleaning gas is an activated gas. As an example, the activation treatment is plasma activation. For instance, NF3 gas is subjected to plasma activation treatment to make it contain NF2. + F -Active ingredients, etc. In other embodiments, a cleaning gas at room temperature can be introduced into a high-temperature chamber via a delivery pipeline to activate the cleaning gas and achieve a cleaning effect.

[0069] In this embodiment, the reaction gas delivery pipeline 115 further includes a gas mixing pipeline 117, located between the first sub-delivery pipeline 111' and the transverse delivery pipeline 113, and located between the first sub-delivery pipeline 111' and the longitudinal delivery pipeline 114. The output end of the gas mixing pipeline 117 is connected to the input end of the first sub-delivery pipeline 111', and the input end of the gas mixing pipeline 117 is connected to the output end of the transverse delivery pipeline 113 and the output end of the longitudinal delivery pipeline 114, respectively.

[0070] The gas mixing pipeline 117 is used to mix the reaction gases in the transverse conveying pipeline 113 and the longitudinal conveying pipeline 114, which helps to improve the uniformity of the distribution of each reaction gas, thereby facilitating the supply of reaction gases with better uniformity to the chamber of the semiconductor device, and thus helping to improve the quality of semiconductor process.

[0071] Specifically, the reaction gas delivery pipeline 115 further includes: a first reducing pipeline 118, located between the gas mixing pipeline 117 and the first sub-delivery pipeline 111', the large end of the first reducing pipeline 118 being connected to the output end of the gas mixing pipeline 117, and the small end of the first reducing pipeline 118 being connected to the input end of the first sub-delivery pipeline 111'.

[0072] The "large end" refers to the end with the larger diameter in the reducing pipe, and the "small end" refers to the end with the smaller diameter in the reducing pipe.

[0073] The first reducing pipe 118 is used to connect the gas mixing pipe 117 and the first sub-delivery pipe 111', which helps to make the reaction gas in the gas mixing pipe 117 flow into the first sub-delivery pipe 111' evenly, thereby further improving the uniformity of each reaction gas.

[0074] It should be noted that the diameter D1 of the mixing pipeline 117 (e.g., Figure 2 (as shown) and the length L2 of the mixing pipeline 117 (as shown) Figure 1 The values ​​shown should not be too small. If the diameter D1 of the mixing pipeline 117 is too small, or the length L2 of the mixing pipeline 117 is too short, the mixing effect of the mixing pipeline 117 on the reacting gases in the transverse conveying pipeline 113 and the longitudinal conveying pipeline 114 will be poor. Therefore, in this embodiment, the diameter D1 of the mixing pipeline 117 is greater than or equal to 40.5 mm, and the length L2 of the mixing pipeline 117 is greater than or equal to 25 mm.

[0075] In this embodiment, the longitudinal delivery pipeline further includes a second reducing pipeline 119, located between the second sub-delivery pipeline 112' and the gas mixing pipeline 117. The small end of the second reducing pipeline 119 is connected to the output end of the second sub-delivery pipeline 112', and the large end of the second reducing pipeline 119 is connected to the input end of the gas mixing pipeline 117. This facilitates the uniform flow of the reactant gas in the second sub-delivery pipeline 112' of the longitudinal delivery pipeline 114 into the gas mixing pipeline 117, thereby improving the uniformity of the distribution of the reactant gas in the gas mixing pipeline 117, and further improving the uniformity of the reactant gas distribution within the semiconductor device cavity.

[0076] The lower gas distribution module 120 is used to provide a spatial location for forming the main delivery pipeline 121.

[0077] In this embodiment, the lower gas distribution module 120 includes a lower gas distribution aluminum block. The reason why the lower gas distribution module 120 includes a lower gas distribution aluminum block is similar to the reason why the upper gas distribution module 110 includes an upper gas distribution aluminum block, so it will not be described again here.

[0078] As an example, flange heads are provided on the outer wall near the top of the lower gas distribution module 120 and on the outer wall near the bottom of the upper gas distribution module 110. The lower gas distribution module 120 and the upper gas distribution module 110 are fixedly connected by the flange heads, i.e., flange connection, so that the upper gas distribution module 110 and the lower gas distribution module 120 are stacked. In other embodiments, other methods can also be used to stack the upper gas distribution module and the lower gas distribution module.

[0079] The main delivery pipeline 121 is used for communication between the first delivery pipeline 111 and the chamber of the semiconductor device to supply gas to the chamber of the semiconductor device.

[0080] In this embodiment, the main delivery pipeline 121 extends in a direction perpendicular to the top surface of the upper gas distribution module 110. In other embodiments, the main delivery pipeline may extend in other directions.

[0081] Specifically, both the main delivery pipeline 121 and the first delivery pipeline 111 extend in a direction perpendicular to the top surface of the upper gas distribution module 110, allowing gas to flow smoothly from the first delivery pipeline 111 into the main delivery pipeline 121. This reduces the probability of gas remaining in the first delivery pipeline 111 and the main delivery pipeline 121, and also helps to reduce the difficulty of manufacturing the first delivery pipeline 111 and the main delivery pipeline 121.

[0082] In this embodiment, the main delivery pipeline 121 includes: a connecting pipeline 122, the input end of which is connected to the output end of each of the first delivery pipelines 111; and a guiding pipeline 123, the input end of which is connected to the output end of the connecting pipeline 122.

[0083] The connecting pipe 122 is used for the connection between the first delivery pipe 111 and the guide pipe 123.

[0084] As each gas flows into the chamber via the first delivery pipe 111 at a different location, the guide pipe 123 can guide each gas to the same location on the main delivery pipe 121. This facilitates the supply of gas to the semiconductor chamber via the gas distribution structure 100, ensuring that each gas flows into the chamber from the same location on the main delivery pipe 121, thereby improving process controllability.

[0085] Specifically, the connecting pipe 122 is a third reducing pipe, the large end of the third reducing pipe has a closed annular cross-sectional shape, and surrounds the output ends of each of the first conveying pipes 111 to communicate with the output ends of each of the first conveying pipes 111; the input end of the guiding pipe 123 is connected to the small end of the third reducing pipe.

[0086] The cross-sectional shape of the large end of the third reducing pipe is a closed ring, and it surrounds the output end of each of the first conveying pipes 111 to connect with the output end of each of the first conveying pipes 111. This helps to reduce the difficulty of connecting the input end of the connecting pipe 122 with the output end of each of the first conveying pipes 111, thereby helping to reduce process costs.

[0087] The input end of the guide pipe 123 is connected to the small end of the third reducing pipe, that is, the diameter D2 of the guide pipe 123 is smaller than the diameter of the large end of the third reducing pipe.

[0088] More specifically, the gas distribution structure 100 further includes a sealing ring (not shown) located at the interface between the lower gas distribution module 120 and the upper gas distribution module 110, and the sealing ring surrounds the cross-sectional profile of the large end of the third reducing pipe.

[0089] It should be noted that, as Figure 3 As shown, the diameter D2 of the guide pipe 123 should not be too large. If the diameter D2 of the guide pipe 123 is too large, it is easy to cause the gas to be guided to the same position of the main delivery pipe 121 through the guide pipe 123 in a poor manner. Therefore, in this embodiment, the diameter D2 of the guide pipe 123 is less than or equal to 16 mm.

[0090] It should also be noted that, such as Figure 1 As shown, the length L3 of the guide pipe 123 should not be too short. If the length L3 of the guide pipe 123 is too short, it is easy to cause the gas to be guided to the same position of the main delivery pipe 121 through the guide pipe 123 in a poor way. Therefore, in this embodiment, the length L3 of the guide pipe 123 is greater than or equal to 25 mm.

[0091] As an example, the diameter D2 of the guide pipe 123 is less than or equal to 16 mm, and the length L3 of the guide pipe 123 is greater than or equal to 25 mm.

[0092] In one embodiment, the main delivery pipeline 121 further includes a fourth reducing pipeline 124, the small end of which is connected to the output end of the guide pipeline 123, and the large end of which is used to connect to the chamber of the semiconductor device, so that the gas in the fourth reducing pipeline 124 can flow into the chamber evenly, thereby improving the uniformity of gas distribution in the chamber.

[0093] Accordingly, this utility model also provides a semiconductor device.

[0094] Reference Figures 1 to 3 The semiconductor device includes: a chamber (not shown); a gas distribution structure 100 as described in any embodiment of the present invention, wherein the output end of the main delivery pipeline 121 of the gas distribution structure 100 is connected to the chamber.

[0095] Since the multiple first delivery pipes 111 of the gas distribution structure 100 are isolated from each other, the probability of different types of gases coming into contact and reacting in the first delivery pipes 111 is reduced during the process of supplying different types of gases to the chamber of the semiconductor device through each first delivery pipe 111. This reduces the probability that the inner wall of the gas distribution structure 100 will be damaged by chemical reactions, and correspondingly reduces the number of particles remaining on the wafer surface due to chemical reactions. This improves the quality of semiconductor processing and the service life of the gas distribution structure 100.

[0096] As an example, the semiconductor device is a flow chemical vapor deposition (CVD) apparatus; the chamber is the curing chamber of the CVD apparatus; the output end of the main delivery pipeline 121 of the gas distribution structure 100 is connected to the curing chamber, which helps to reduce the probability of different types of gases (e.g., cleaning gases and residual reactive gases) contacting and reacting in the first delivery pipeline 111, thereby improving the quality of the CVD process. In other embodiments, the semiconductor device may also be other CVD apparatuses or etching apparatuses, etc.

[0097] It should be noted that for a detailed description of each component in the gas distribution structure, please refer to the detailed description of the foregoing embodiments, which will not be repeated in this embodiment.

[0098] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A gas distribution structure, characterized by, A gas distribution structure for communicating with a chamber of a semiconductor device, comprising: an upper gas distribution module and a lower gas distribution module arranged in a stack; The upper gas distribution module comprises: a plurality of first delivery lines, each of which is located at a different position in the upper gas distribution module and is isolated from each other; The lower gas distribution module comprises: a main delivery line penetrating through the lower gas distribution module, an input end of the main delivery line in communication with an output end of each of the first delivery lines, and an output end of the main delivery line for communicating with the chamber of the semiconductor device.

2. The gas distribution structure of claim 1, wherein, The gas distribution structure further comprises: a plurality of second delivery lines located at the side or top of the first delivery lines, one end of the second delivery line in communication with the corresponding first delivery line, and the other end for connecting with an external gas source.

3. The gas distribution structure of claim 2, wherein, The second delivery line includes a transverse delivery line and a longitudinal delivery line, the longitudinal delivery line is located at the top of the first delivery line and extends in a direction perpendicular to the top surface of the upper gas distribution module, and the transverse delivery line is located at the side of the first delivery line and extends in a direction parallel to the top surface of the upper gas distribution module.

4. The gas distribution structure of claim 3, wherein, In a plurality of the second delivery lines, at least one of the transverse delivery lines and at least one of the longitudinal delivery lines are in communication with the same first delivery line; wherein the transverse delivery line is in communication with the side of the first delivery line, and the longitudinal delivery line is in communication with the top of the first delivery line.

5. The gas distribution structure of claim 4, wherein, At least one of the transverse delivery lines and at least one of the longitudinal delivery lines are in communication with the same first delivery line. The longitudinal delivery line in communication with the reaction gas delivery line includes a water vapor delivery line.

6. The gas distribution structure of claim 5, wherein, At least one of the transverse delivery lines and at least one of the longitudinal delivery lines are in communication with the same first delivery line.

7. The gas distribution structure of claim 4, wherein, Each of the first delivery lines comprises: a first sub-delivery line located in the bottom surface of the upper gas distribution module and in communication with the input end of the main delivery line; The reaction gas delivery line further comprises: a mixing line located between the first sub-delivery line and the transverse delivery line, and between the first sub-delivery line and the longitudinal delivery line, an output end of the mixing line in communication with the input end of the first sub-delivery line, and an input end of the mixing line in communication with the output end of the transverse delivery line and the output end of the longitudinal delivery line, respectively.

8. The gas distribution structure of claim 5 or 6, wherein, The reaction gas delivery line further comprises: a first reducing line located between the mixing line and the first sub-delivery line, a large end of the first reducing line in communication with the output end of the mixing line, and a small end of the first reducing line in communication with the input end of the first sub-delivery line. The diameter of the mixing line is greater than or equal to 40.5 mm, and the length of the mixing line is greater than or equal to 25 mm.

9. The gas distribution structure of claim 8, wherein, ​ 10. The gas distribution structure of claim 8, wherein, ​ 11. The gas distribution structure of claim 8, wherein, The transverse conveying pipeline and the longitudinal conveying pipeline each comprise a second sub-conveying pipeline, an input end of the second sub-conveying pipeline being configured to be connected with an external gas source; the second sub-conveying pipeline of the transverse conveying pipeline comprises a first part located in the upper gas distribution module and a second part located on a side of the upper gas distribution module, the second part being in communication with the first part; the second sub-conveying pipeline of the longitudinal conveying pipeline is also located on a top of the upper gas distribution module. The longitudinal conveying pipeline further comprises a second reducing pipeline located between the second sub-conveying pipeline and the gas mixing pipeline, a small end of the second reducing pipeline being in communication with an output end of the second sub-conveying pipeline, and a large end of the second reducing pipeline being in communication with an input end of the gas mixing pipeline.

12. The gas distribution structure of claim 8, wherein, The first sub-conveying pipeline has a length ranging from 20 mm to 30 mm.

13. The gas distribution structure of claim 3, wherein, The transverse conveying pipeline and the longitudinal conveying pipeline each comprise a second sub-conveying pipeline, an input end of the second sub-conveying pipeline being configured to be connected with an external gas source; the second sub-conveying pipeline of the transverse conveying pipeline comprises a first part located in the upper gas distribution module and a second part located on a side of the upper gas distribution module, the second part being in communication with the first part; the second sub-conveying pipeline of the longitudinal conveying pipeline is also located on a top of the upper gas distribution module.

14. The gas distribution structure of claim 1, wherein, The main conveying pipeline comprises a connecting pipeline and a guide pipeline, an input end of the connecting pipeline being in communication with an output end of each first conveying pipeline, and an input end of the guide pipeline being in communication with an output end of the connecting pipeline.

15. The gas distribution structure of claim 14, wherein, The connecting pipeline is a third reducing pipeline, a large end of the third reducing pipeline having a closed annular cross-sectional shape and surrounding the output end of each first conveying pipeline to be in communication with the output end of each first conveying pipeline; the input end of the guide pipeline is in communication with a small end of the third reducing pipeline.

16. The gas distribution structure of claim 14, wherein, The main conveying pipeline further comprises a fourth reducing pipeline, a small end of the fourth reducing pipeline being in communication with an output end of the guide pipeline, and a large end of the fourth reducing pipeline being configured to be in communication with a chamber of the semiconductor device.

17. The gas distribution structure of claim 14, wherein, The guide pipeline has a diameter less than or equal to 16 mm and a length greater than or equal to 25 mm.

18. The gas distribution structure of claim 1, wherein, The main conveying pipeline and the first conveying pipeline each extend in a direction perpendicular to a top surface of the upper gas distribution module.

19. A semiconductor device, characterized by comprising: Comprise: a chamber; the gas distribution structure according to any one of claims 1-18, an output end of a main conveying pipeline of the gas distribution structure being in communication with the chamber.

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