Blanking pipe for continuously czochralski monocrystalline silicon

Abstract

The utility model provides a blanking pipe for continuous czochralski monocrystalline silicon, which relates to the field of monocrystalline silicon production and comprises a collecting cylinder, a blanking port is arranged at the bottom of the collecting cylinder, a blanking branch pipe is fixed inside the blanking port in a penetrating manner, and a hopper blanking header pipe is mounted on the side wall of the collecting cylinder. The end part of the hopper blanking header pipe is communicated with a continuous blanking pipe mounted on the single crystal furnace; a heating assembly is installed on the collecting cylinder and comprises a power socket covering the top of the collecting cylinder, and a plurality of sets of heating pipes capable of being inserted into the collecting cylinder are evenly installed at the bottom of the power socket. According to the discharging pipe, the heating assembly is arranged on the collecting cylinder, so that a high-temperature environment can be formed in the collecting cylinder, and materials in the collecting cylinder can be uniformly heated; adding the heated material into a crucible; the temperature difference with the crucible is small; therefore, the damage to the crucible caused by thermal shock can be reduced; the disturbance on the temperature of the molten silicon is greatly reduced, and a relatively stable temperature field in the crucible is favorably maintained.

Description

Technical Field

[0001] This utility model relates to the field of monocrystalline silicon production, specifically a feeding tube for continuous Czochralski monocrystalline silicon production. Background Technology

[0002] In the Czochralski process for producing monocrystalline silicon, a secondary feeding device is typically used to increase the amount of silicon material fed and reduce crystal pulling costs. There are generally two types of feeding devices: one is an internal feeder, usually a cylindrical device made of quartz. In use, polycrystalline silicon material is placed inside the cylinder, and the auxiliary chamber of the monocrystalline furnace adds material to the crucible. A single feeding is 60-100 kg, and typically 5-7 feedings are required. This method corresponds to an intermittent crystal pulling process, meaning feeding needs to be done when crystal pulling is stopped. The other type is an external continuous feeder, which uses an external fixed chamber and a vibrating feeding device to continuously transport polycrystalline silicon material to the crucible of the monocrystalline furnace through a feeding pipe. This crystal pulling method is continuous, also called continuous crystal pulling, and compared to the first method, it offers higher production capacity, greater safety, and more stable crystal quality.

[0003] For continuous crystal pulling processes using external feeders, the stability of the feeding process directly affects the stability of crystal pulling. Because the material blocks tend to fall in the same location on the molten silicon during feeding, it disturbs the temperature of the molten silicon, affecting the temperature stability of the crystal growth interface, causing dislocations in the crystal, and impacting the crystal formation rate. Furthermore, the existing connection method between the feeding pipe and the hopper affects the continuity and sealing of the feeding process. The concentrated feeding location disturbs the temperature of the molten silicon, leading to decreased crystal pulling stability and crystal quality. The connection structure between the feeding pipe and the hopper is prone to material powder leakage. When the material volume is large, the feeding pipe is easily blocked, preventing further crystal pulling.

[0004] To address the aforementioned issues, existing patent CN220099270U discloses a feeding tube device for continuous Czochralski single-crystal silicon pulling. This device continuously feeds material into a hopper, and the material blocks fall through the feeding tube into the molten silicon within the inner and outer quartz crucibles, completing the feeding process. This feeding process is continuous, with material added uninterruptedly at a rate of approximately 150 g / min, but intermittent feeding can also be used as needed for crystal pulling. However, this design features two sets of feeding branches at the bottom of the feeding tube, employing a dual-point feeding method, and the two sets of feeding branches are relatively close together. This prevents the material from uniformly entering the molten silicon through multi-point feeding, resulting in excessive disturbance to the molten silicon temperature.

[0005] Therefore, in order to meet the current needs of monocrystalline silicon production, new products need to be developed and designed to address the above-mentioned problems. Utility Model Content

[0006] To address the shortcomings of existing technologies, this invention provides a feeding tube for continuous Czochralski single crystal silicon production. Using this feeding tube for feeding can reduce disturbances to the molten silicon temperature and help maintain a relatively stable temperature field inside the crucible.

[0007] To achieve the above objectives, the specific solution adopted by this utility model is as follows:

[0008] A feeding tube for continuous Czochralski single crystal silicon includes a collecting cylinder with an open upper end and a closed lower end. A hopper feeding main pipe is installed on the upper part of the side wall of the collecting cylinder, and the end of the hopper feeding main pipe is connected to a continuous feeding tube installed on a single crystal furnace. A feeding port is provided through the lower part of the side wall of the collecting cylinder, and a feeding branch pipe is inserted in the feeding port. Material entering the collecting cylinder from the hopper feeding main pipe can fall into a crucible through the feeding branch pipe.

[0009] A heating assembly is installed on the collecting cylinder. The heating assembly includes a power base covering the top of the collecting cylinder. Multiple sets of heating tubes are evenly installed at the bottom of the power base. The multiple sets of heating tubes are inserted inside the collecting cylinder to heat the material inside the collecting cylinder.

[0010] Furthermore, the heating assembly also includes two sets of concentric rings arranged vertically and vertically. Each set of concentric rings includes an inner ring and an outer ring arranged concentrically. The inner ring and the outer ring are connected by several connecting pieces. The inner ring is fixedly connected to all heating tubes, and the outer ring can wrap all heating tubes inside. Several sliding strips are evenly distributed on the outer circumferential surface of the two outer rings. Several positioning tracks are evenly distributed along the circumferential direction on the inner wall of the collecting cylinder. The positioning tracks extend along the axial direction of the collecting cylinder, and the sliding strips can move along the corresponding positioning tracks.

[0011] Furthermore, the lower side wall of the collecting cylinder has several discharge ports evenly distributed circumferentially, and each discharge port is inserted and fixed with a discharge branch pipe. At the same time, the angle between the axis of the discharge branch pipe and the axis of the collecting cylinder is 45°.

[0012] Furthermore, the end of the feed branch pipe furthest from the collecting cylinder is connected to the connecting pipe via a flange.

[0013] Furthermore, the connector has a V-shaped structure.

[0014] Furthermore, a connecting flange is fixedly installed on the top of the collecting cylinder, and a docking flange is fixedly installed on the power socket. The connecting flange and the docking flange are fixed by bolts, thereby realizing the fixation of the collecting cylinder and the power socket.

[0015] Beneficial effects:

[0016] (1) By setting a heating component inside the collecting cylinder, the present invention creates a high-temperature environment, which can uniformly heat the material inside the collecting cylinder; the heated material is added into the crucible; the temperature difference between the material and the crucible is small; this can reduce the damage to the crucible caused by thermal shock; greatly reduce the disturbance to the melting silicon temperature, and help maintain a relatively stable temperature field inside the crucible.

[0017] (2) By uniformly setting multiple feeding branches, this utility model can achieve the purpose of multi-point feeding, thereby increasing the contact area between the material and the high-temperature environment inside the crucible; multi-point feeding allows the material to receive heat at multiple locations simultaneously, thereby accelerating the melting speed of the material; it helps to shorten the entire production cycle and improve the production efficiency of the single crystal furnace.

[0018] (3) The concentric ring assembly in this utility model not only facilitates the quick positioning and installation of the heating component in the collecting cylinder, but also ensures that the heating component will not move axially or shake inside the collecting cylinder 1, thus improving its stability.

[0019] (4) The end of the feed branch pipe furthest from the collecting cylinder is connected to the connecting pipe via a flange. The flange connection facilitates the installation, disassembly and replacement of the feed branch pipe and the connecting pipe. It allows for quick operation during equipment maintenance, cleaning or component damage, improving equipment maintainability, reducing downtime and increasing production efficiency.

[0020] (5) The connecting pipe has a V-shaped structure. The V-shaped structure can guide the material to fall into the molten silicon in the crucible along a specific trajectory, further promoting the uniform dispersion of the material, avoiding the material from accumulating in a certain area, reducing the disturbance to the temperature of the molten silicon, and improving the stability of the crystal pulling process. Attached Figure Description

[0021] Figure 1 This is one of the structural schematic diagrams of the feed tube in this utility model.

[0022] Figure 2 This is the second schematic diagram of the material feeding tube in this utility model.

[0023] Figure 3 This is the third schematic diagram of the material feeding tube in this utility model.

[0024] Figure 4 This is the fourth structural schematic diagram of the feed tube in this utility model.

[0025] Figure 5 This is the fifth structural schematic diagram of the feed tube in this utility model (wherein, the collecting cylinder is in a half-section state).

[0026] Figure 6 This is one of the structural schematic diagrams of the heating component.

[0027] Figure 7 This is the second schematic diagram of the heating component.

[0028] Reference numerals: 1. Collecting cylinder, 11. Positioning rail, 2. Hopper discharge main pipe, 3. Discharge branch pipe, 4. Connecting flange, 5. Heating assembly, 51. Power socket, 52. Butt flange, 53. Sliding strip, 54. Outer ring, 55. Inner ring, 56. Connecting piece, 57. Heating tube, 6. Butt pipe. Detailed Implementation

[0029] The technical solution of this utility model will be clearly and completely described below with reference to specific embodiments. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0030] In the description of this utility model, it should be understood that the terms "upper" and "lower" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the scope of protection of this utility model.

[0031] It should be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0032] This utility model provides a feeding tube for continuous Czochralski single crystal silicon production, such as... Figure 1-5 As shown, the system includes a collecting cylinder 1, with a feeding port at its bottom. A feeding branch pipe 3 is inserted and fixed inside the feeding port, and the bottom of the feeding branch pipe 3 is fixedly connected to the connecting pipe 6 via a flange. A hopper feeding main pipe 2 is installed on the side wall of the collecting cylinder 1, and the end of the hopper feeding main pipe 2 is connected to a continuous feeding pipe installed on the single crystal furnace. A heating assembly 5 is installed on the top of the collecting cylinder 1. The heating assembly 5 includes a power supply base 51 covering the surface of the collecting cylinder 1, and multiple sets of heating tubes 57 are evenly installed at the bottom of the power supply base 51. It should be noted that... Figure 1-5 The diagram shows the state when the collecting cylinder 1 and the heating component 5 are separated. When using this feeding pipe, the collecting cylinder 1 and the heating component 5 need to be fixed.

[0033] Specifically, the bottom of the collecting cylinder 1 has five sets of discharge ports evenly distributed, and each of the five sets of discharge ports is internally fitted with a discharge branch pipe 3. The angle between the discharge branch pipe 3 and the collecting cylinder 1 is 45°. The bottom of each of the five sets of discharge branch pipes 3 is equipped with a connecting pipe 6, which is V-shaped. The discharge branch pipes 3 and the connecting pipes 6 are fixedly connected by flanges.

[0034] A connecting flange 4 is fixedly installed on the top of the collecting cylinder 1, and a docking flange 52 is installed on the power supply base 51. The docking flange 52 covers the connecting flange 4 and is fixed with bolts. Five sets of heating tubes 57 are evenly installed on the bottom of the power supply base 51, and the five sets of heating tubes 57 are inserted into the inside of the collecting cylinder 1.

[0035] Please refer to Figure 6 and Figure 7 The heating assembly also includes two sets of concentric rings arranged vertically. Each set of concentric rings includes an inner ring 55 and an outer ring 54 arranged concentrically. The inner ring 55 and the outer ring 54 are connected by several connecting pieces 56, which are trapezoidal in shape. The inner ring 55 is fixedly connected to all heating tubes 57, and the outer ring 54 can wrap all heating tubes 57 inside. Several sliding strips 53 are evenly distributed on the outer circumferential surface of the two outer rings 54. Several positioning tracks 11 are evenly distributed circumferentially on the inner wall of the collecting cylinder 1. The positioning tracks 11 extend along the axial direction of the collecting cylinder 1. The sliding strips 53 are respectively inserted into the interior of the corresponding positioning track 11. The cross-section of the positioning track 11 and the sliding strip 53 are both isosceles trapezoidal.

[0036] The inner ring 55 integrates multiple spirally arranged heating tubes into a single unit, facilitating the assembly and disassembly of all heating tubes 57. Furthermore, after the inner ring 55 and outer ring 54 are fixed together by a connecting piece 56, the outer ring 54 is equipped with a sliding strip 53, allowing for precise positioning and installation of all heating tubes 57 within the collecting cylinder 1. The sliding strip 53 not only facilitates quick positioning and installation of the heating assembly 5 within the collecting cylinder 1 but also ensures that the heating assembly 5 does not experience axial movement or shaking within the collecting cylinder 1, thus improving its stability.

[0037] In practical use, the material enters the collecting cylinder 1 from the main discharge pipe 2 of the hopper, and falls through five sets of discharge branch pipes 3 and connecting pipes 6 evenly installed on the outer circumference of the bottom of the collecting cylinder 1, falling into the crucible of the crystal furnace. This multi-point feeding method evenly distributes the material throughout the crucible, avoiding localized overheating or undercooling. When material is added at multiple points, heat is distributed more evenly within the crucible, resulting in a more stable temperature field during melting. Multi-point feeding increases the contact area between the material and the high-temperature environment inside the crucible. It also allows the material to receive heat simultaneously at multiple locations, accelerating the melting rate and improving the efficiency of the single crystal furnace. Production efficiency: The interior of the collecting cylinder 1 is heated by the heating component 5, creating a high-temperature environment that allows for uniform heating of the material inside. The heated material is then added to the crucible, where the temperature difference between the material and the crucible is minimal. This reduces damage to the crucible caused by thermal shock and helps maintain a relatively stable temperature field within the crucible. A stable temperature field is crucial for high-quality crystal growth during single-crystal growth. A stable temperature facilitates crystal growth along a predetermined direction, reducing internal defects. Adding material after heating reduces additional heating time, shortening the overall production cycle and enabling the production of more single-crystal silicon products per unit time.

[0038] like Figure 1-5 As shown: The material inside the collecting cylinder 1 falls evenly into the crucible through five sets of feeding branch pipes 3 and connecting pipes 6. The collecting cylinder 1 is installed above the crucible. The five sets of feeding branch pipes 3 form five feeding channels and are evenly distributed on the upper surface of the crucible. During the feeding process, it can reduce the impurity agglomeration caused by uneven temperature and local overheating. Under a stable temperature environment, the distribution of impurities after the material melts is more uniform, which is beneficial to obtaining purer single crystal silicon in the subsequent crystal growth process. The uniform temperature field and efficient melting process also help to reduce defects caused by temperature fluctuations in the early stage of crystal growth and greatly reduce the disturbance to the melting silicon temperature.

[0039] The above description is merely a preferred embodiment of this utility model and is not intended to limit the scope of this utility model in any way. All equivalent modifications or alterations made based on the essence of this utility model should be covered within the protection scope of this utility model.

Claims

1. A seed tube for continuous Czochralski single crystal silicon, characterized by comprising: The application relates to a material collecting cylinder (1) which is open at the upper end and closed at the lower end, a hopper downpipe (2) is arranged on the upper part of the side wall of the material collecting cylinder (1), and the end of the hopper downpipe (2) is communicated with a continuous downpipe arranged on a single crystal furnace; a downpipe branch (3) is arranged in the downpipe of the material collecting cylinder (1), and the material in the hopper downpipe (2) can fall into a crucible through the downpipe branch (3); A heating assembly (5) is arranged on the material collecting cylinder (1), the heating assembly (5) comprises a power supply seat (51) arranged on the top of the material collecting cylinder (1), a plurality of groups of heating pipes (57) are uniformly arranged on the bottom of the power supply seat (51), and the heating pipes (57) are inserted into the material collecting cylinder (1) to heat the material in the material collecting cylinder (1).

2. The seed tube for continuous single crystal silicon pulling down according to claim 1, characterized in that, The heating assembly (5) further comprises two groups of concentric ring groups arranged in a one-up-and-one-down mode, each group of concentric ring groups comprises an inner ring (55) and an outer ring (54) arranged in a concentric mode, the inner ring (55) and the outer ring (54) are connected through a plurality of connecting plates (56), the inner ring (55) is fixedly connected with all the heating pipes (57), the outer ring (54) can wrap all the heating pipes (57), a plurality of sliding strips (53) are uniformly distributed on the outer circumferential surface of each outer ring (54), a plurality of positioning tracks (11) are uniformly distributed on the inner wall of the material collecting cylinder (1) in a circumferential direction, the positioning tracks (11) extend along the axial direction of the material collecting cylinder (1), and the sliding strips (53) can move along the corresponding positioning tracks (11).

3. The seed tube for continuous single crystal silicon pulling as claimed in claim 1, wherein A plurality of downpipes are uniformly distributed on the lower part of the side wall of the material collecting cylinder (1) in a circumferential direction, each downpipe branch (3) is fixedly arranged in each downpipe, and the included angle between the axis of the downpipe branch (3) and the axis of the material collecting cylinder (1) is 45 degrees.

4. The seed stock tube of claim 1, wherein The end of the downpipe branch (3) away from the material collecting cylinder (1) is connected with a butt joint pipe (6) through a flange.

5. The seed stock tube of claim 4, wherein The butt joint pipe (6) has a V-shaped structure.

6. The seed stock tube of claim 1, wherein The top of the material collecting cylinder (1) is fixedly provided with a connecting flange (4), the power supply seat (51) is fixedly provided with a butt joint flange (52), the connecting flange (4) and the butt joint flange (52) are fixed through bolts, and the material collecting cylinder (1) and the power supply seat (51) are fixed.

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