MOS tube chip with built-in resistor and electronic equipment

Abstract

The utility model discloses an MOS tube chip with a built-in resistor and an electronic device. The MOS tube chip comprises a top layer provided with a grid electrode and a source electrode and a bottom layer provided with a drain electrode. The top layer is also provided with a current-limiting routing resistor and / or a voltage-dividing routing resistor; the current-limiting routing resistor is arranged on the top layer and is used for being connected with a main control chip; the voltage-dividing routing resistors are connected among the drain electrode, the source electrode or the external connection pin of the MOS tube chip, and the common connection end of the voltage-dividing routing resistors is used for being connected with a main control chip. According to the utility model, the current-limiting resistor and the divider resistor are integrated in the MOS tube chip by adopting the routing resistor, so that the integration level of the main control chip is improved during specific application, and the peripheral circuit of the main control chip is simpler.

Description

Technical Field

[0001] This utility model relates to the field of integrated circuit technology, and in particular to a MOS transistor chip with built-in resistor and an electronic device. Background Technology

[0002] With continuous advancements in semiconductor manufacturing processes, the performance of MOSFETs has been significantly improved, resulting in lower on-resistance and faster switching speeds. This performance improvement has led to the widespread application of MOSFETs in more fields, driving market demand growth. For example, MOSFETs play a crucial role in key components such as new energy vehicles, battery management systems, and motor controllers, becoming indispensable components.

[0003] The withstand voltage of a MOSFET is usually higher than that of the main controller (MCU) port, and the drain-source voltage VDS during switching is relatively large, resulting in a high impulse waveform. The main controller often needs to sample the high voltage section, which requires corresponding external voltage divider resistors to divide the high voltage signal, or series resistors to protect the port safety. This makes the peripheral circuit of the main controller more complex and has a lower integration.

[0004] Therefore, existing technologies still need to be improved and developed. Utility Model Content

[0005] In view of the shortcomings of the prior art, the purpose of this utility model is to provide a MOS transistor chip and electronic device with built-in resistors, so as to solve the problem that the peripheral circuit of the main controller is more complex and has a lower integration degree because the main controller needs to use corresponding external voltage divider resistors to divide high voltage signals or connect series resistors to protect the port safety.

[0006] The technical solution of this utility model is as follows:

[0007] In a first aspect, this utility model provides a MOS transistor chip with built-in resistors, comprising a top layer with a gate and a source, and a bottom layer with a drain; the top layer is further provided with a current-limiting trace resistor and / or a voltage-dividing trace resistor; the current-limiting trace resistor is disposed on the top layer and is used to connect to the main control chip; the voltage-dividing trace resistor is connected between the drain, source, or external pin of the MOS transistor chip, and the common terminal of the voltage-dividing trace resistor is used to connect to the main control chip.

[0008] In a further embodiment of this invention, one end of the current-limiting trace resistor is connected to the gate, the source, or the drain, and the other end of the current-limiting trace resistor is used to connect to the main control chip.

[0009] In a further embodiment of this invention, one end of the current-limiting trace resistor is used to connect to the main control chip, and the other end of the current-limiting trace resistor is used to connect to an external circuit.

[0010] In a further feature of this invention, the current-limiting trace resistor has first pads at both ends.

[0011] In a further embodiment of this invention, at least two voltage divider trace resistors are provided, and each voltage divider trace resistor is connected in series. The first voltage divider trace resistor is connected to the drain of the MOS transistor chip, and the last voltage divider trace resistor is connected to the source of the MOS transistor chip, or connected to an external pin.

[0012] In a further improvement of this invention, a second pad is provided at both ends of the voltage divider trace resistor.

[0013] In a further improvement of this invention, the resistance ratio between the voltage divider trace resistors is adjusted by the length of the voltage divider trace resistors.

[0014] In a further embodiment of this invention, the MOS transistor chip has several unit structures, each unit structure including a gate and a source disposed on the top layer and a drain disposed on the bottom layer; the current-limiting trace resistor is connected to the gate, source, or drain of the unit structure; and the voltage-dividing trace resistor is connected to the drain or source of the unit structure.

[0015] In a further embodiment of this invention, the MOS transistor chip is a P-type MOS transistor chip or an N-type MOS transistor chip.

[0016] Secondly, this utility model also provides an electronic device, which includes a MOS transistor chip with a built-in resistor as described above.

[0017] This invention provides a MOS transistor chip and electronic device with built-in resistors. The MOS transistor chip includes a top layer with a gate and a source, and a bottom layer with a drain. The top layer also has a current-limiting trace resistor and / or a voltage-dividing trace resistor. The current-limiting trace resistor is located on the top layer and is used to connect to the main control chip. The voltage-dividing trace resistor is connected between the drain, source, or external pin of the MOS transistor chip, and its common terminal is used to connect to the main control chip. This invention integrates the current-limiting resistor and the voltage-dividing resistor inside the MOS transistor chip using trace resistors, which improves the integration of the main control chip and simplifies the peripheral circuitry of the main control chip. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the top-level structure of the MOS transistor chip with built-in resistor in this utility model.

[0020] Figure 2 This is a schematic diagram of the distribution of voltage divider trace resistors on the MOS transistor chip in this utility model.

[0021] Figure 3 This is an enlarged schematic diagram of the distribution of voltage divider trace resistors on the MOS transistor chip in this utility model.

[0022] Figure 4 This is an enlarged schematic diagram of the distribution of current-limiting trace resistors on a MOS transistor chip in this utility model.

[0023] Figure 5 This is a schematic diagram of the top layer of a MOSFET.

[0024] Figure 6 This is a schematic diagram of removing the top metal layer of a MOSFET.

[0025] Figure 7 This is a schematic diagram of the unit structure of a MOSFET.

[0026] Figure 8 This is a schematic diagram of the current-limiting trace resistor in one embodiment of the present invention.

[0027] Figure 9 This is a schematic diagram of the voltage divider wiring resistor in one embodiment of the present invention.

[0028] Figure 10 This is an equivalent circuit diagram of the built-in current-limiting trace resistor of the MOS transistor chip in one embodiment of the present invention.

[0029] Figure 11 This is a wiring diagram of the built-in current-limiting trace resistor of a MOS transistor chip in one embodiment of this utility model.

[0030] Figure 12 This is an equivalent circuit diagram of the built-in voltage divider trace resistor of a MOS transistor chip in one embodiment of this utility model.

[0031] Figure 13 This is a wiring diagram of the built-in voltage divider trace resistor of a MOS transistor chip in one embodiment of this utility model.

[0032] The markings in the attached diagram are as follows: 10, unit structure; 20, current-limiting trace resistor; 30, voltage divider trace resistor; T1, first pad; T2, second pad; 40, gate pad. Detailed Implementation

[0033] This utility model provides a MOS transistor chip with built-in resistor and an electronic device. To make the purpose, technical solution, and effects of this utility model clearer and more explicit, the following describes this utility model in further detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of this utility model and are not intended to limit this utility model.

[0034] In the implementation methods and claims, unless otherwise specified in the text, the terms "a," "an," "the," and "the" may also include plural forms. If the embodiments of this utility model involve descriptions of "first," "second," etc., such descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features.

[0035] It should be further understood that the term "comprising" as used in this specification means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. It should be understood that when an element is referred to as "connected" or "coupled" to another element, it can be directly connected or coupled to the other element, or there may be intermediate elements present. Furthermore, "connected" or "coupled" as used herein can include wireless connections or wireless coupling. The term "and / or" as used herein includes all or any of the units and all combinations thereof of one or more associatedly listed items.

[0036] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0037] Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such combination of technical solutions does not exist and is not within the scope of protection claimed by this utility model.

[0038] The inventors discovered that the withstand voltage of a MOSFET is usually higher than that of the main control MCU port, and the drain-source voltage VDS during switching is relatively large, resulting in a high impulse waveform. The main control often needs to sample the high-voltage part, which requires corresponding external voltage divider resistors to divide the high-voltage signal, or series resistors to protect the port safety. Furthermore, if high-precision, low-temperature drift resistor voltage division is required, more external resistors are needed, and the accuracy of the resistors will affect the sampling accuracy. The integration and sampling accuracy of the main control chip are both relatively low.

[0039] To address the aforementioned technical problems, this invention provides a MOS transistor chip and electronic device with built-in resistors. The MOS transistor chip includes a top layer with a gate and a source, and a bottom layer with a drain. The top layer also includes a current-limiting trace resistor and / or a voltage-dividing trace resistor. The current-limiting trace resistor is located on the top layer and is used to connect to the main control chip. One end of the voltage-dividing trace resistor is connected to the source and drain or to an external pin, and the other end is used to connect to the main control chip. This invention integrates the current-limiting resistor and the voltage-dividing resistor inside the MOS transistor chip using trace resistors. In practical applications, this improves the integration of the main control chip and simplifies the peripheral circuitry of the main control chip. Furthermore, since the ratio between the trace resistors is determined by the trace length, the trace length of the layout determines the resistor ratio, thus allowing for precise measurement of the required proportional resistors. This avoids the problem of resistance values ​​changing due to process variations and improves sampling accuracy.

[0040] Please also refer to Figures 1 to 13 This utility model provides a preferred embodiment of a MOS transistor chip with built-in resistor.

[0041] In some embodiments, such as Figures 1 to 4 As shown, this utility model provides a MOS transistor chip with built-in resistors, which includes a top layer with a gate and a source, and a bottom layer with a drain; the top layer is further provided with a current-limiting trace resistor 20 and / or a voltage-dividing trace resistor 30; the current-limiting trace resistor 20 is disposed on the top layer and is used to connect to the main control chip MCU; the voltage-dividing trace resistor 30 is connected between the drain D, source S or external pin of the MOS transistor chip, and the common terminal of the voltage-dividing trace resistor 30 is used to connect to the main control chip MCU.

[0042] In this embodiment, the MOS transistor chip has a bottom layer and a top layer, such as Figure 5 and Figure 6 As shown, Figure 5 This is a schematic diagram of the top-level structure of a MOSFET. Figure 6This is a schematic diagram of a MOSFET with the metal layer removed from the top layer. The gate (G) and source (S) are located on the top layer, while the drain (D) is located on the bottom layer. The MOSFET chip can integrate only the current-limiting resistor 20, only the voltage-dividing resistor 30, or both. Both the current-limiting resistor 20 and the voltage-dividing resistor 30 are located on the top layer of the MOSFET. The voltage-dividing resistor being connected between the drain, source, or external pin of the MOSFET chip means that the voltage-dividing resistor 30 can be connected between the drain and source of the MOSFET chip, or between the drain and an external pin.

[0043] This invention, without increasing the process layer, only adjusts the chip layout, integrating current-limiting resistors and voltage-dividing resistors inside the MOSFET chip using trace resistors. In practical applications, this improves the integration of the main control chip, simplifies its peripheral circuitry, and facilitates system integration and multi-chip packaging. It allows chips with different manufacturing processes and voltage ratings to be rationally integrated into a single chip through built-in resistors. Furthermore, since the ratio between trace resistors is determined by the trace length, the trace length in the layout determines the resistor ratio, minimizing the impact of process deviations. This allows for precise measurement of the required proportional resistors, avoiding resistance changes due to process variations. The temperature and voltage coefficients are better than those of externally connected resistors, improving sampling accuracy. Especially in analog circuits (e.g., differential amplifiers, current mirrors, voltage dividers using sampling resistors), well-matched resistors can significantly improve circuit accuracy and performance. Moreover, by selecting appropriate resistor ratios, the temperature characteristics of the circuit system can be optimized. For example, in temperature compensation circuits, the resistor ratio design can offset the impact of temperature changes on circuit performance. In extreme temperature environments, the built-in proportional resistors ensure circuit stability and reliability.

[0044] In this embodiment, please refer to Figure 7 The MOS transistor chip has several unit structures 10. Each unit structure 10 includes a gate G and a source S disposed on the top layer and a drain D disposed on the bottom layer. The gate of each unit structure 10 is connected to a gate pad 40. The current-limiting trace resistor 20 is connected to the gate G, source S, or drain D of the unit structure 10; the voltage-dividing trace resistor 30 is connected to the drain or source of the unit structure 10.

[0045] In this embodiment, the MOS transistor chip can be a P-type MOS transistor chip or an N-type MOS transistor chip.

[0046] In some embodiments, please refer to Figure 4 and Figure 8One end of the current-limiting trace resistor 20 is connected to the gate G, the source S or the drain D, and the other end of the current-limiting trace resistor 20 is used to connect to the main control chip.

[0047] In this embodiment, one end of the current-limiting trace resistor 20 needs to be connected to the gate, source, or drain of the MOSFET chip. For example, in this embodiment, it is connected to the source (S) of the MOSFET chip, and the other end is connected to the main control chip to form a loop. Taking the main control chip as a lithium battery control chip as an example, one end of the current-limiting trace resistor 20 is connected to the source (S) of the MOSFET chip.

[0048] In some embodiments, one end of the current-limiting trace resistor 20 is used to connect to the main control chip, and the other end of the current-limiting trace resistor 20 is used to connect to an external circuit.

[0049] In this embodiment, when the resistor integrated within the MOSFET chip is not connected to the gate (G), source (S), and drain (D) of the MOSFET chip, one end of the current-limiting trace resistor 20 is connected to the main control chip, and the other end of the current-limiting trace resistor 20 is connected to an external circuit to form a loop. Taking a lithium battery main control chip as an example, one end of the current-limiting trace resistor 20 is connected to the power supply terminal VDD of the main control chip, and the other end of the current-limiting trace resistor 20 is connected to an external circuit connected to the output terminal of the lithium battery.

[0050] In some embodiments, a current-limiting trace resistor 20 that is not connected to the electrodes of the MOS transistor chip can be integrated inside the MOS transistor chip. That is, the current-limiting trace resistor 20 is independently integrated inside the MOS transistor chip and forms a loop by connecting with the main control chip and external circuits. At the same time, a current-limiting trace resistor 20 connected to the electrodes of the MOS transistor chip can also be integrated to form a loop by connecting with the electrodes of the MOS transistor and the main control chip.

[0051] In some embodiments, please refer to Figure 4 The current-limiting trace resistor 20 has a first pad T1 at one or both ends. The connection between the current-limiting trace resistor 20 and the pins of the MOS transistor chip, as well as the connection between the current-limiting trace resistor 20 and the pins of the main control chip, is achieved through the first pad T1. When the current-limiting trace resistor 20 needs to be connected to an external circuit, the first pad T1 of the current-limiting trace resistor 20 is connected to an external pin of the package frame to achieve the connection to the external circuit.

[0052] Please see Figure 4 , Figure 8 , Figure 10 and Figure 11 The current-limiting trace resistor 20 between the two first pads T1 is equivalent to Figure 10The resistor R1 in the diagram, and the current-limiting trace resistor 20 between the first pad T1 and the source S of the MOSFET chip, are equivalent to... Figure 10 The resistor R2 in the middle, Figure 11 For the wiring diagram, to ensure accuracy, the pads of the two current-limiting trace resistors are labeled T1A, T1B, and T1C respectively in this embodiment. Pads T1B and T1C are equivalent to the pads at both ends of the current-limiting trace resistor 20, which is equivalent to resistor R1. When the current-limiting trace resistor 20 is equivalent to resistor R2, one end of the current-limiting trace resistor 20 is connected to the source S of the MOSFET chip, and the other end is connected to the VM pin of the main control chip MCU. Pad T1A is equivalent to the pad at one end of the current-limiting trace resistor 20, which is equivalent to resistor R2. Since one end of resistor R2 is connected to the source S, the end of the current-limiting trace resistor 20 connected to the source S does not require a pad.

[0053] In some embodiments, please refer to Figure 3 and Figure 9 At least two voltage divider trace resistors 30 are provided, and each voltage divider trace resistor 30 is connected in series. The first voltage divider trace resistor 30 is connected to the drain D of the MOS transistor chip, and the last voltage divider trace resistor 30 is connected to the source S of the MOS transistor chip or to an external pin.

[0054] In this embodiment, multiple voltage divider trace resistors 30 are connected in series for voltage sampling. One end of each series-connected voltage divider trace resistor 30 is connected to an electrode of the MOSFET chip, such as the drain (D) of the MOSFET chip, and the other end is connected to the source (S) of the MOSFET chip or an external pin. The common terminal of the voltage divider trace resistor 30 is connected to the main control chip, such as the sampling terminal (FB) of the main control chip. Because the resistance value of the external resistor can vary with process variations, this embodiment integrates the trace resistors inside the MOSFET chip. The resistance ratio between the voltage divider trace resistors 30 is adjusted by the length of the voltage divider trace resistors 30, thereby accurately obtaining the required proportional resistance and improving sampling accuracy.

[0055] In some embodiments, please refer to Figure 3 The voltage divider trace resistor 30 has a second pad T2 at one or both ends. The voltage divider trace resistor 30 is connected to the electrode of the MOS transistor chip and the main control chip through the second pad T2. When one end of the voltage divider trace resistor 30 is connected to the source of the MOS transistor chip, one end of the voltage divider trace resistor 30 is directly connected to the source, and no pad is required.

[0056] It should be noted that multiple series-connected voltage divider trace resistors 30 can be integrated inside the MOS transistor chip. Each voltage divider trace resistor 30 is led out through the second pad T2. In specific implementation, the required proportional resistor can be selected to connect to the second pad T2 of which voltage divider trace resistor 30.

[0057] Please see Figure 3 , Figure 9 , Figure 12 and Figure 13 Taking the resistor of a two-segment voltage divider as an example, Figure 3 and Figure 9 The voltage divider trace resistance 30 between the two second pads T2 is equivalent to Figure 12 The resistor R3 in the diagram, and the voltage divider trace resistance 30 between the second pad T2 and the source S of the MOSFET chip, are equivalent to resistor R4. Figure 13 For the wiring diagram, to ensure accuracy, the pads of the two voltage divider resistors 30 are defined as T2A and T2B. The two voltage divider resistors share a single pad T2B. The voltage divider resistor between pads T2A and T2B is equivalent to resistor R3, and the voltage divider resistor between pad T2A and the source S is equivalent to resistor R4. Since the voltage divider resistor between pad T2A and the source S is connected to the source S, the end of the voltage divider resistor connected to the source S does not require a pad. The common terminal of the voltage divider resistors 30 is connected to the sampling terminal FB of the main control chip MCU through pad T2B.

[0058] In some embodiments, the present invention also provides an electronic device, which may be a new energy vehicle, a battery management system, a motor controller, etc., and the electronic device includes a MOSFET chip with a built-in resistor as described above. Specific details regarding a MOSFET chip with a built-in resistor are not repeated here.

[0059] In summary, the MOS transistor chip and electronic device with built-in resistor provided by this utility model have the following beneficial effects:

[0060] By using trace resistors to integrate the current-limiting resistor and voltage-dividing resistor inside the MOSFET chip, the integration of the main control chip is improved in practical applications, making the peripheral circuit of the main control chip simpler.

[0061] Since the ratio between trace resistors is determined by the trace length, the trace length of the layout determines the resistor ratio, thus allowing for accurate determination of the required proportional resistors. This avoids the problem of resistance values ​​changing due to process variations, thereby improving sampling accuracy.

[0062] It should be understood that the application of this utility model is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A MOS transistor chip with built-in resistor, characterized in that, It includes a top layer with a gate and a source, and a bottom layer with a drain; the top layer is also provided with a current-limiting trace resistor and / or a voltage-dividing trace resistor; the current-limiting trace resistor is located on the top layer and is used to connect to the main control chip; the voltage-dividing trace resistor is connected between the drain, source, or external pin of the MOS transistor chip, and the common terminal of the voltage-dividing trace resistor is used to connect to the main control chip.

2. The MOS transistor chip with built-in resistor according to claim 1, characterized in that, One end of the current-limiting trace resistor is connected to the gate, the source, or the drain, and the other end of the current-limiting trace resistor is used to connect to the main control chip.

3. The MOS transistor chip with built-in resistor according to claim 1, characterized in that, One end of the current-limiting trace resistor is used to connect to the main control chip, and the other end of the current-limiting trace resistor is used to connect to an external circuit.

4. The MOS transistor chip with built-in resistor according to claim 2 or 3, characterized in that, The current-limiting trace resistor has a first pad at one or both ends.

5. The MOS transistor chip with built-in resistor according to claim 1, characterized in that, At least two voltage divider trace resistors are provided, and each voltage divider trace resistor is connected in series. The first voltage divider trace resistor is connected to the drain of the MOS transistor chip, and the last voltage divider trace resistor is connected to the source of the MOS transistor chip, or connected to an external pin.

6. The MOS transistor chip with built-in resistor according to claim 5, characterized in that, The voltage divider trace resistor has a second pad at one or both ends.

7. The MOS transistor chip with built-in resistor according to claim 4, characterized in that, The resistance ratio between the voltage divider trace resistors is adjusted by the length of the voltage divider trace resistors.

8. The MOS transistor chip with built-in resistor according to claim 1, characterized in that, The MOS transistor chip has several unit structures, each unit structure including a gate and a source disposed on the top layer and a drain disposed on the bottom layer; the current limiting trace resistor is connected to the gate, source, or drain of the unit structure; the voltage dividing trace resistor is connected to the drain or source of the unit structure.

9. The MOS transistor chip with built-in resistor according to claim 1, characterized in that, The MOS transistor chip is a P-type MOS transistor chip or an N-type MOS transistor chip.

10. An electronic device, characterized in that, Including the MOS transistor chip with built-in resistor as described in any one of claims 1-9.

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